基本信息
吴东海  男  博导  中国科学院半导体研究所
电子邮件: dhwu@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号半导体研究所
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
锑化物半导体材料MBE外延生长
锑化物半导体光电器件制备技术

教育背景

2003-09--2008-07   中国科学院半导体研究所   博士

工作经历

   
工作简历
2020-11~现在, 中国科学院半导体研究所, 研究员
2014-12~2020-10,Northwestern University, Research Assistant Professor
2008-08~2014-11,清华同方股份有限公司, 研发总监
2003-09~2008-07,中国科学院半导体研究所, 博士

专利与奖励

   
专利成果
( 1 ) 在锗衬底上生长无反相畴砷化镓薄膜的分子束外延方法, 2010, 第 2 作者, 专利号: CN101624725

( 2 ) 砷化镓基1.5微米量子阱结构及其外延生长方法, 2008, 第 5 作者, 专利号: CN100382347

( 3 ) 1.3微米高密度量子点结构及其制备方法, 2006, 第 9 作者, 专利号: CN1786107

出版信息

   
发表论文
(1) Mid-wave infrared p+-B-n InAs/InAsSb type-II superlattice photodetector with an AlAsSb/InAsSb superlattice barrier, Infrared Physics & Technology, 2022, 通讯作者
(2) Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices, INFRARED PHYSICS & TECHNOLOGY, 2021, 第 3 作者
(3) High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier, INFRARED PHYSICS & TECHNOLOGY, 2020, 第 1 作者
(4) Room temperature quantum cascade lasers with 22% wall plug efficiency in continuous-wave operation, OPTICS EXPRESS, 2020, 
(5) Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation, APPLIED PHYSICS LETTERS, 2020, 第 2 作者
(6) Type-II superlattice-based heterojunction phototransistors for high speed applications, INFRARED PHYSICS & TECHNOLOGY, 2020, 第 3 作者
(7) Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation, PHOTONICS, 2020, 第 2 作者
(8) Continuous wave quantum cascade lasers with 5.6 W output power at room temperature and 41% wall-plug efficiency in cryogenic operation, AIP ADVANCES, 2020, 
(9) Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice, AIP ADVANCES, 2020, 第 1 作者
(10) High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAsSb superlattice photodetector by MOCVD, Appl. Phys. Lett, 2020, 第 1 作者
(11) Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition, APPLIED PHYSICS LETTERS, 2019, 第 1 作者
(12) High quantum efficiency mid-wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes grown by metal-organic chemical vapor deposition, Appl. Phys. Lett, 2018, 第 1 作者
(13) Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition, APPLIED PHYSICS LETTERS, 2018, 
(14) Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD, APPLIED PHYSICS LETTERS, 2018, 
(15) High power, low divergent, substrate emitting quantum cascade ring laser in continuous wave operation, APL MATERIALS, 2017, 
(16) Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells, Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells, 中国物理快报:英文版, 2009, 第 4 作者
(17) Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy, CHINESE PHYSICS LETTERS, 2009, 第 2 作者
(18) Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy, Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy, 中国物理快报:英文版, 2009, 第 2 作者
(19) Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy, Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy, 中国物理快报:英文版, 2009, 第 2 作者
(20) High-density and narrow size-distribution inas quantum dots formed by a modified two-step growth, CHINESE PHYSICS B, 2008, 第 6 作者
(21) GaAs 基1.55 μm GaInNAs(Sb)、异变InGaAs 量子阱材料与激光器, 2008, 第 1 作者
(22) High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth, High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth, 中国物理:英文版, 2008, 第 6 作者
(23) Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy, CHINESE PHYSICS LETTERS, 2007, 通讯作者
(24) Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy, Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy, 中国物理快报:英文版, 2007, 第 2 作者
(25) 1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长, 1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy, 半导体学报, 2006, 第 4 作者
(26) Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy, Chinese Physics Letters, 2006, 第 1 作者
(27) 1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长, 1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy, 半导体学报, 2006, 第 6 作者
(28) 快速热退火对高应变InGaAs/GaAs量子阱的影响, Effect of Rapid Thermal Annealing on Highly Strained InGaAs/GaAs Quantum Well, 半导体学报, 2005, 第 4 作者
(29) 1.3μm GaAs基GaInNAs量子阱生长与激光器研制, Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes, 半导体学报, 2005, 第 10 作者
(30) 1.3μm GaAs基GaInNAs量子阱生长与激光器研制, Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes, 半导体学报, 2005, 第 5 作者

科研活动

   
科研项目
( 1 ) 甚长波探测器2, 负责人, 国家任务, 2020-12--2024-12
( 2 ) 中国科学院高层人才计划择优支持, 负责人, 中国科学院计划, 2022-03--2025-12
( 3 ) 硅基发光理论及材料创制与应用, 参与, 中国科学院计划, 2021-06--2026-12