080903-微电子学与固体电子学
080300-光学工程

碲镉汞红外探测器的器件物理，器件设计，制备和表征

2012-09--2017-07   中国科学院上海硅酸盐研究所   博士/工学博士
2012-09--2013-07   中国科学技术大学   研究生课程学业证明书
2008-09--2012-07   南昌大学   本科/工学学士

   

[1] Liqi Zhu, Huachen Ge, Huijun Guo, Lu Chen, Chun Lin, Chen, Baile. Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2023, 70(5): 2384-2388, [2] Dan Yang, Jiamu Lin, Chun Lin, Xi Wang, Songmin Zhou, Huijun Guo, Ruijun Ding, Li He. Improved responsivity and detectivity of LPE HgCdTe short-wavelength infrared photodetector by tuning the composition gradient. SOLID STATE ELECTRONICS[J]. 2023, 205: http://dx.doi.org/10.1016/j.sse.2023.108665.
[3] 郭慧君, 陈路, 杨辽, 沈川, 谢浩, 林春, 丁瑞军, 何力. 碲镉汞光子计数型线性雪崩探测器（特邀）. 红外与激光工程[J]. 2023, 52(3): http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7427073&detailType=1.
[4] Hao Xie, Huijun Guo, Liqi Zhu, Liao Yang, Chuan Shen, Baile Chen, Lu Chen, Li He. Research on high gain-bandwidth product mid-wavelength infrared HgCdTe avalanche photodiodes. Proceedings of SPIE[J]. 2023, 12505: 125050R-1, [5] Huijun Guo, Liao Yang, Chuan Shen, Hao Xie, Dan Yang, Liqi Zhu, Quanzhi Sun, Chun Lin, Lu Chen, Ruijun Ding, Li He. Developments and Characterization of HgCdTe e-APDs at SITP. Proceedings of SPIE[J]. 2023, 12505: 125050C-1, [6] Liqi Zhu, Huijun Guo, Zhiqi Zhou, Zhiyang Xie, Hao Xie, Lu Chen, Chun Lin, Baile Chen. Bandwidth characterization and optimization of high-performance mid-wavelength infrared HgCdTe e-avalanche photodiodes. INFRARED PHYSICS AND TECHNOLOGY[J]. 2023, 131: http://dx.doi.org/10.1016/j.infrared.2023.104682.
[7] Dan Yang, Huijun Guo, Liao Yang, Lu Chen, Chun Lin, Ruijun Ding, Li He. Characterization of gain and excess noise for mid-wavelength infrared HgCdTe electron avalanche photodiodes. Proceedings of SPIE[J]. 2023, 12505: 125050E-1, [8] Wang, Fang, Dai, Fuxing, Li, Yantao, Guo, Huijun. Distinct junction transformations of pixel-arrayed long-wavelength infrared detectors by photocurrent mapping. INFRARED PHYSICS & TECHNOLOGY[J]. 2022, 125: http://dx.doi.org/10.1016/j.infrared.2022.104309.
[9] Yang, Dan, Guo, Huijun, Zhu, Liqi, Yang, Liao, Chen, Lu, Lin, Chun, Ding, Ruijun, He, Li. Area-dependent gain and noise characteristics of mid-wavelength infrared HgCdTe planar electron avalanche photodiodes. MATERIALS RESEARCH EXPRESS[J]. 2022, 9(8): [10] Han, Xuepeng, Guo, Huijun, Yang, Liao, Zhu, Liqi, Yang, Dan, Xie, Hao, Wang, Fang, Chen, Lu, Chen, Baile, He, Li. Dark current and noise analysis for Long-wavelength infrared HgCdTe avalanche photodiodes. INFRARED PHYSICS & TECHNOLOGY[J]. 2022, 123: http://dx.doi.org/10.1016/j.infrared.2022.104108.
[11] Zhu, Liqi, Guo, Huijun, Deng, Zhuo, Yang, Liao, Huang, Jian, Yang, Dan, Zhou, Zhiqi, Shen, Chuan, Chen, Lu, Lin, Chun, Chen, Baile. Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared E-Avalanche Photodiode. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS[J]. 2022, 28(2): [12] Li, Xin, Chen, Jian, He, Jiale, Chen, Jin, Guo, Huijun, Yang, Liao, Shen, Chuan, Yu, Feilong, Zhao, Zengyue, Li, Guanhai, Chen, Xiaoshuang, Lu, Wei. Collapse Breakdown in Mid-Wavelength Infrared HgCdTe Avalanche Photodetector. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS[J]. 2022, 28(6): http://dx.doi.org/10.1109/JSTQE.2022.3174618.
[13] Yang, Liao, Guo, Huijun, Shen, Chuan, Xie, Hao, Yang, Dan, Zhu, Liqi, Wang, Fang, Sun, Quanzhi, Chen, Lu, Lin, Chun, He, Li. Modeling and characteristics of MWIR HgCdTe APD at different post-annealing processes. INFRARED PHYSICS & TECHNOLOGY[J]. 2022, 127: http://dx.doi.org/10.1016/j.infrared.2022.104413.
[14] Zhou, Wen, Zheng, Li, Ning, Zhijun, Cheng, Xinhong, Wang, Fang, Xu, Kaimin, Xu, Rui, Liu, Zhongyu, Luo, Man, Hu, Weida, Guo, Huijun, Zhou, Wenjia, Yu, Yuehui. Silicon: quantum dot photovoltage triodes. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-021-27050-9.
[15] 沈川, 杨辽, 郭慧君, 杨丹, 陈路, 何力. 中波PIN结构碲镉汞雪崩器件变温特性的数值模拟研究. 红外与毫米波学报[J]. 2021, 40(5): 576-581, http://lib.cqvip.com/Qikan/Article/Detail?id=7105875529.
[16] Fang Wang, Xuming Zou, Mengjian Xu, Hao Wang, Hailu Wang, Huijun Guo, Jiaxiang Guo, Peng Wang, Meng Peng, Zhen Wang, Yang Wang, Jinshui Miao, Fansheng Chen, Jianlu Wang, Xiaoshuang Chen, Anlian Pan, Chongxin Shan, Lei Liao, Weida Hu. Recent Progress on Electric and Optical Manipulations of Perovskite Photodetectors. Advanced Science[J]. 2021, 8: 2100569-1, [17] Jin Chen, Jian Chen, Xin Li, Jiale He, Liao Yang, Jian Wang, Feilong Yu, Zengyue Zhao, Chuan Shen, Huijun Guo, Guanhai Li, Xiaoshuang Chen, Wei Lu. High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared. NPJ QUANTUM MATERIALS[J]. 2021, 6(1): 1-7, https://doaj.org/article/102072dbbc174b879ab86c1c261d814d.
[18] 章琪文, 梁清华, 郭慧君, 陈洪雷, 丁瑞军. 线性模式主被动碲镉汞APD探测器测试研究. 红外与激光工程[J]. 2021, 50(6): 129-139, http://lib.cqvip.com/Qikan/Article/Detail?id=7105117870.
[19] Xie, Runzhang, Li, Qing, Wang, Peng, Chen, Xiaoshuang, Lu, Wei, Guo, Huijun, Chen, Lu, Hu, Weida. Spatial description theory of narrow-band single-carrier avalanche photodetectors. OPTICS EXPRESS[J]. 2021, 29(11): 16432-16446, http://dx.doi.org/10.1364/OE.418110.
[20] Zhu, Liqi, Deng, Zhuo, Huang, Jian, Guo, Huijun, Chen, Lu, Lin, Chun, Chen, Baile. Low frequency noise-dark current correlations in HgCdTe infrared photodetectors. OPTICS EXPRESS[J]. 2020, 28(16): 23660-23669, http://dx.doi.org/10.1364/OE.399565.
[21] Li, Fangzhe, Deng, Jie, Zhou, Jing, Chu, Zeshi, Yu, Yu, Dai, Xu, Guo, Huijun, Chen, Lu, Guo, Shangkun, Lan, Mengke, Chen, Xiaoshuang. HgCdTe mid-Infrared photo response enhanced by monolithically integrated meta-lenses. SCIENTIFICREPORTS[J]. 2020, 10(1): http://dx.doi.org/10.1038/s41598-020-62433-w.
[22] 程雨顺, 郭慧君, 李浩, 陈路, 林春, 何力. 碲镉汞APD平面型PIN结构仿真设计. 红外与毫米波学报[J]. 2020, 39(1): 6-12, http://lib.cqvip.com/Qikan/Article/Detail?id=7100994611.
[23] Huijun Guo, Lu Chen, Liao Yang, Dan Yang, Chuan Shen, Quanzhi Sun, Honglei Chen, Chun Lin, Ruijun Ding, Li He. The Latest Developments of HgCdTe e-APDs at SITP. Proceedings of SPIE, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 2020, Vol.11717: 1171736[J]. 2020, [24] Liao Yang, Lu Chen, Huijun Guo, Dan Yang, Chuan Shen, Honglei Chen, Chun Lin, Ruijun Ding, Li He. Dark current mechanism of medium wave HgCdTe avalanche photodiode. Proceedings of SPIE[J]. 2020, 11717: 1171737-1, [25] 李浩, 林春, 周松敏, 郭慧君, 王溪, 陈洪雷, 魏彦锋, 陈路, 丁瑞军, 何力. 碲镉汞雪崩焦平面器件. 红外与毫米波学报[J]. 2019, 38(5): 587-590, https://nxgp.cnki.net/kcms/detail?v=3uoqIhG8C44YLTlOAiTRKibYlV5Vjs7iLik5jEcCI09uHa3oBxtWoHaFNRCj5SgjAPv_htHjA4LMnld5TsERqP8cERPalsx4&uniplatform=NZKPT.
[26] 任士远, 林春, 魏彦锋, 周松敏, 王溪, 郭慧君, 陈路, 丁瑞军, 何力. 碲镉汞器件光敏元电容测试与分析. 红外技术[J]. 2019, 41(5): 413-417, http://lib.cqvip.com/Qikan/Article/Detail?id=7002029846.
[27] Huijun Guo, Yushun Cheng, Lu Chen, Chun Lin, Hao Li, Honglei Chen, Ruijun Ding, Li He. The performance of mid-wave infrared HgCdTe e-avalanche photodiodes at SITP. SPIE Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111702M (2019)[J]. 2019, [28] Cheng Yushun, Chen Lu, Guo Huijun, Lin Chun, He Li. Improved local field model for HgCdTe electron avalanche photodiode. INFRARED PHYSICS & TECHNOLOGY[J]. 2019, 101: 156-161, http://dx.doi.org/10.1016/j.infrared.2019.07.002.
[29] 彭俊, 马艳, 郭慧君. Fe3Al表面划痕形变与切屑形成的分子动力学研究. 机械科学与技术[J]. 2018, 37(5): 704-708, http://lib.cqvip.com/Qikan/Article/Detail?id=675249002.
[30] Huijun Guo, Wei Huang, Jun Peng, Ren-Wei Zhou, Xue-Chao Liu, Yan-Qing Zheng, Er-Wei shi. Study of Ehrlich-Schwoebel barrier in 4H-SiC epitaxial growths by molecular statics method. MATERIALSSCIENCEFORUM[J]. 2016, 858: 217-220, [31] Wei Huang, Hui-Jun Guo, Xi Liu, Xue-Chao Liu, Yan-Qing Zheng, Jian-Hua Yang, er-wei shi. A competitive lattice model Monte Carlo method for simulation of competitive growth of different polytypes in SiC single crystal. Materials Science Forum[J]. 2016, 858: 45-48, [32] Ren-Wei Zhou, Xue-Chao Liu, Hui-Jun Guo, Hai-Kuan Kong, Er-Wei Shi. Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates. Materials Science Forum[J]. 2016, 858: 225-228, [33] Guo, HuiJun, Huang, Wei, Liu, Xi, Gao, Pan, Zhuo, ShiYi, Xin, Jun, Yan, ChengFeng, Liu, XueChao, Zheng, YanQing, Yang, JianHua, Shi, ErWei. A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide. COMPUTATIONAL MATERIALS SCIENCE[J]. 2015, 100(Pt.B): 159-165, http://dx.doi.org/10.1016/j.commatsci.2014.11.056.
[34] Zhao, Jie, Cao, Minghui, Cheng, Baochang, Wu, Guohong, Guo, Huijun, Ai, Yilong, Su, Xiaohui, Xiao, Yanhe, Lei, Shuijin. Carbon-encapsulated CdSe quantum dot inorganic hybrid nanobelts for high performance photoelectronic devices based on the efficient separation and transfer of photoinduced holes. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2015, 3(11): 2471-2478, https://www.webofscience.com/wos/woscc/full-record/WOS:000350984200005.
[35] Guo, HuiJun, Huang, Wei, Liu, Xi, Gao, Pan, Zhuo, ShiYi, Xin, Jun, Yan, ChengFeng, Zheng, YanQing, Yang, JianHua, Shi, ErWei. Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations. AIP ADVANCES[J]. 2014, 4(9): https://doaj.org/article/6e8da12396f845c98a611630ec76372d.
[36] Cheng, Baochang, Han, Zhihui, Guo, Huijun, Lin, Shu, Zhang, Zhaodong, Xiao, Yanhe, Lei, Shuijin. Trapping states in CdS:Eu nanobelts studied by excitation-dependent photoluminescence. JOURNAL OF APPLIED PHYSICS[J]. 2010, 108(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000280000400085.

   

（ 1 ） 线性模式中波红外碲镉汞电子雪崩光电二极管器件工艺及其噪声机理研究, 负责人, 地方任务, 2018-05--2021-04
（ 2 ） 人工微结构集成的高带宽碲镉汞线性雪崩探测器研究, 负责人, 国家任务, 2022-01--2024-12
（ 3 ） 碲镉汞高工作温度短波线性雪崩器件特性研究, 负责人, 国家任务, 2022-01--2025-12

（1）HgCdTe雪崩焦平面探测器的发展与应用   第二十四届全国激光学术会议暨第十五届全国激光技术与光电子学学术会议   2020-10-17
（2）HgCdTe线性模式APD焦平面器件概述   第十四届全国激光与光电子学学术会议暨2018中国光学十大进展发布会   2019-03-17