基本信息
曹玉莲  女  博导  中国科学院半导体研究所
电子邮件: caoyl@semi.ac.cn
通信地址: 北京市912信箱
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
半导体激光器及探测器
硅基异质集成光电子器件

教育背景

2003-09--2006-09   中国科学院半导体研究所   博士
2000-09--2003-04   中国科学院长春光学精密机械与物理研究所   硕士
1996-09--2000-07   哈尔滨师范大学   学士

工作经历

   
工作简历
2020-09~现在, 中国科学院半导体研究所, 研究员
2014-07~2020-08,中国科学院半导体研究所, 副研究员
2012-06~2014-06,新加坡南洋理工大学, Research Fellow
2011-02~2012-05,中国科学院半导体研究所, 副研究员
2006-10~2011-01,中国科学院半导体研究所, 助理研究员
2003-09~2006-09,中国科学院半导体研究所, 博士
2000-09~2003-04,中国科学院长春光学精密机械与物理研究所, 硕士
1996-09~2000-07,哈尔滨师范大学, 学士

教授课程

半导体光电材料与器件

专利与奖励

   
专利成果
( 1 ) 边发射激光器及其制备方法, 2023, 第 2 作者, 专利号: CN202310340905.2

( 2 ) 片上双程增益放大装置及其制备方法, 2022, 第 3 作者, 专利号: CN202310340905.2

( 3 ) InAs/GaSb二类超晶格红外探测器, 2012, 第 4 作者, 专利号: CN102569484A

( 4 ) 钝化InAs/GaSb二类超晶格红外探测器制作方法, 2012, 第 1 作者, 专利号: CN102569521A

( 5 ) 甚长波InAs/GaSb二类超晶格红外探测器材料的制备方法, 2012, 第 4 作者, 专利号: CN102544229A

( 6 ) Ⅱ类超晶格窄光谱红外光电探测器材料的外延生长方法, 2012, 第 3 作者, 专利号: CN102534764A

( 7 ) 通过腔面镀膜来提高量子点激光器温度特性的方法, 2011, 第 1 作者, 专利号: CN101958512A

( 8 ) 一种制作高亮度半导体锥形激光器/放大器的方法, 2009, 第 1 作者, 专利号: CN101471534A

出版信息

   
发表论文
(1) Influence of thermal effects in microresonators on the locking range in self-injection locking of laser diodes, J. Opt. Soc. Am. B, 2023, 第 3 作者
(2) The Progress and Trend of Heterogeneous Integration Silicon/III-V Semiconductor Optical Amplifiers, PHOTONICS, 2023, 通讯作者
(3) Principles, Measurements and Suppressions of Semiconductor Laser Noise-A Review, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2021, 第 4 作者
(4) Short/mid-wave two-band type II InAs/GaSb superlattice infrared heterojunction phototransistor, 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019, 第 6 作者
(5) 锑化物二类超晶格红外探测器, Antimonide Type Ⅱ Superlattice Infrared Photodetectors, 航空兵器, 2019, 第 3 作者
(6) Monte Carlo simulation of avalanche noise characteristics of type II InAs/GaSb superlattice avalanche photodiodes, SOLID STATE COMMUNICATIONS, 2019, 第 6 作者
(7) Short/Mid-Wave Two-Band Type-II Superlattice Infrared Heterojunction Phototransistor, IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 第 6 作者
(8) Two-Color niBin Type II Superlattice Infrared Photodetector With External Quantum Efficiency Larger Than 100%, IEEE ELECTRON DEVICE LETTERS, 2017, 第 4 作者
(9) Electron mobility of inverted InAs/GaSb quantum well structure, SOLID STATE COMMUNICATIONS, 2017, 第 5 作者
(10) Pushing Detection Wavelength Toward 1 mu m by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers, IEEE ELECTRON DEVICE LETTERS, 2016, 第 4 作者
(11) Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers, IEEE ELECTRON DEVICE LETTERS, 2016, 第 4 作者
(12) 含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器, Three-color InAs/GaAs quantum dot infrared photodetector with AlGaAs inserting layer, ACTA PHYSICA SINICA, 2016, 第 5 作者
(13) Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector, APPLIED PHYSICS LETTERS, 2015, 第 4 作者
(14) Narrow-band Type II Superlattice Photodetector with Detection Wavelength Shorter than 2 um, IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 第 4 作者
(15) Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate, APPLIED PHYSICS LETTERS, 2015, 第 5 作者
(16) Hybrid III–V/silicon laser with laterally coupled Bragg grating, OPTICS EXPRESS, 2015, 第 1 作者
(17) Longer than 1.9 mu m photoluminescence emission from InAs quantum structure on GaAs (001) substrate, APPLIED PHYSICS LETTERS, 2015, 第 5 作者
(18) Narrow-Band Type II Superlattice Photodetector With Detection Wavelength Shorter Than 2 mu m, IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 第 4 作者
(19) Optimization of Hybrid Silicon Lasers for High-Speed Direct Modulation, IEEE PHOTONICS JOURNAL, 2015, 第 1 作者
(20) Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal, SOLID STATE COMMUNICATIONS, 2015, 第 4 作者
(21) Relative Intensity Noise of Silicon Hybrid Laser, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2014, 第 3 作者
(22) Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector, CHINESE SCIENCE BULLETIN, 2014, 第 8 作者
(23) Three-region characteristic temperature in p-doped quantum dot lasers, APPLIED PHYSICS LETTERS, 2014, 通讯作者
(24) 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier, IEEE ELECTRON DEVICE LETTERS, 2013, 第 6 作者
(25) Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 第 7 作者
(26) Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation, JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 第 3 作者
(27) How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 第 6 作者
(28) High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability, OPTICS LETTERS, 2012, 第 1 作者
(29) High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability, OPTICS LETTERS, 2012, 第 1 作者
(30) High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 第 5 作者
(31) Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity, ZHANG, YANHUA1 ; MA, WENQUAN1 ; WEI, YANG1 ; CAO, YULIAN1 ; HUANG, JIANLIANG1 ; CUI, KAI1 ; GUO, XIAOLU1, 2012, 第 4 作者
(32) Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity, APPLIED PHYSICS LETTERS, 2012, 第 4 作者
(33) Temperature compensation for threshold current and slope efficiency of 1.3 mu m inas/gaas quantum-dot lasers by facet coating design, CHINESE PHYSICS LETTERS, 2011, 第 4 作者
(34) Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure, APPLIED PHYSICS LETTERS, 2011, 第 6 作者
(35) Long wavelength infrared inas/gasb superlattice photodetectors with insb-like and mixed interfaces, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 第 3 作者
(36) Temperature Compensation for Threshold Current and Slope Efficiency of 1.3μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design, Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design, 中国物理快报:英文版, 2011, 第 4 作者
(37) High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, 中国物理快报:英文版, 2010, 第 3 作者
(38) High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, CHINESE PHYSICS LETTERS, 2010, 第 3 作者
(39) Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating, APPLIED PHYSICS LETTERS, 2010, 第 1 作者
(40) Delaying the excited state lasing of 1.3?m InAs/GaAs quantum dot lasers by facet coating, Appl. Phys. Lett, 2010, 第 1 作者
(41) A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser, A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser, 中国物理快报:英文版, 2010, 第 3 作者
(42) Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers, JOURNAL OF APPLIED PHYSICS, 2010, 第 4 作者
(43) High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability, PROCEEDINGS OF SPIE-THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING VOL.7844: ART. NO. 784404 2010, 2010, 
(44) Self-heating effect on the two-state lasing behaviors in 1.3-mu m inas-gaas quantum-dot lasers, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 第 3 作者
(45) A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser, A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser, 中国物理快报:英文版, 2010, 第 3 作者
(46) A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser, CHINESE PHYSICS LETTERS, 2010, 第 3 作者
(47) High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, 中国物理快报:英文版, 2010, 第 6 作者
(48) Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers, ACTA PHYSICA SINICA, 2009, 第 2 作者
(49) p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究, Characteristic study of maximum modal gain of p-doped 1.3μm InAs/GaAs quantum dot lasers, 物理学报, 2009, 第 2 作者
(50) Influence of fused interface on the optical and thermal characteristics of vertical cavity lasers, ACTA PHYSICA SINICA, 2008, 第 6 作者
(51) 高功率VCSEL中应变补偿量子阱的理论设计, Theoretical design method of strain compensated quantum well in high power VCSELs, 光电子.激光, 2008, 第 2 作者
(52) Influence of fused interface on the optical and thermal characteristics of vertical cavity lasers, ACTA PHYSICA SINICA, 2008, 第 6 作者
(53) Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 通讯作者
(54) n-GaAs和P-GaN晶片的直接键合, Direct Bonding of n-GaAs and p-GaN Wafers, 半导体学报, 2007, 第 6 作者
(55) 高密度排列大功率垂直腔面发射激光器列阵, Densely Packed High Power VCSEL Arrays, 半导体学报, 2007, 第 2 作者
(56) 键合方法制备长波长面发射的实验和分析, Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method, 半导体学报, 2007, 第 7 作者
(57) 一种长波长MOEMS可调谐滤波器的结构设计和分析, Design and Analysis of a Long Wavelength MOEMS Tunable Filter, 半导体学报, 2007, 第 5 作者
(58) InP基MOEMS可调谐器件的梁变形模拟, Deformation Simulation on the Beam of InP-Based MOEMS Tunable Devices, 半导体学报, 2007, 第 5 作者
(59) 键合界面对面发射激光器的光、热性质影响, Influence of fusion interface on optical and thermal characteristics of vertical cavity lasers, 红外与激光工程, 2007, 第 6 作者
(60) 780nm InGaAsP/InGaP/AlGaAs高功率半导体激光器, 780nm InGaAsP/InGaP/AlGaAs High Power Semiconductor Laser, 半导体学报, 2006, 第 1 作者
(61) 数值分析渐变DBR对垂直腔面发射激光器谐振腔模的影响, 半导体学报, 2006, 第 4 作者
(62) Optical characteristics of DBR with inhomogeneous graded interfaces, ACTA PHYSICA SINICA, 2006, 第 4 作者
(63) Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser, CHINESE PHYSICS LETTERS, 2006, 通讯作者
(64) Optical characteristics of DBR with inhomogeneous graded interfaces, ACTA PHYSICA SINICA, 2006, 第 4 作者
(65) Analysis of Si/GaAs Bonding Stresses with the Finite Element Method, 半导体学报, 2006, 第 6 作者
(66) InGaAsP/InGaP/AlGaAs大光学腔量子阱激光器的优化, 半导体学报, 2006, 第 8 作者

科研活动

   
科研项目
( 1 ) 量子点红外探测器材料及器件物理研究, 参与, 国家任务, 2015-01--2018-12
( 2 ) GaAs基2微米波段亚原子层量子点材料生长与激光器研制, 负责人, 国家任务, 2017-01--2020-12
( 3 ) GaAs基2微米新型量子点激光器的研究, 负责人, 地方任务, 2017-01--2019-12
( 4 ) 高迁移率CMOS与 中红外光子器件及混合集成技术研究子课题, 参与, 国家任务, 2019-08--2021-06
( 5 ) xxx光收发技术, 负责人, 其他国际合作项目, 2020-03--2021-12
( 6 ) 广域智能红外体温筛查系统, 负责人, 国家任务, 2020-03--2021-03
( 7 ) 可调谐半导体种子源, 负责人, 国家任务, 2022-12--2025-11
( 8 ) 半导体光放大关键工艺技术, 负责人, 国家任务, 2022-10--2024-10
( 9 ) 高效转换微波光子核心器件, 负责人, 国家任务, 2022-08--2024-08