基本信息
邓惠雄  男  硕导  中国科学院半导体研究所
电子邮件: hxdeng@semi.ac.cn
通信地址: 北京海淀区清华东路甲35号半导体所2号楼501
邮政编码: 100086

招生信息

   
招生专业
070205-凝聚态物理
招生方向
半导体物理,半导体缺陷物理,半导体材料物性探究与设计

教育背景

2005-09--2010-12   中国科学院半导体研究所   理学博士
2001-09--2005-07   内蒙古大学   学士

工作经历

   
工作简历
2018-01~现在, 中国科学院半导体研究所, 研究员
2015-01~2017-12,中国科学院半导体研究所, 副研究员
2014-02~2014-12,中国科学院半导体研究所, 助理研究员
2011-04~2014-01,美国再生能源国家实验室, 博士后
2011-01~2011-04,中国科学院半导体研究所, 助理研究员
2005-09~2010-12,中国科学院半导体研究所, 理学博士
2001-09~2005-07,内蒙古大学, 学士
社会兼职
2019-08-31-今,半导体学报, 青年编委
2017-07-01-今,中国电子学会, 会员
2017-03-30-今,美国物理学会, 会员
2017-01-01-今,中科院青年创新促进会, 会员

教授课程

半导体功能材料设计
固体物理基础(专业班)
固体物理基础
半导体信息材料设计

专利与奖励

   
专利成果
( 1 ) 准一维硫化锡纳米线的宽波段偏振光探测器及其制备方法, 2019, 第 4 作者, 专利号: 201910495256.7
( 2 ) 二维磁性半导体材料MnIn2Se4的制备方法及在光探测器和场效应晶体管的应用, 2019, 第 4 作者, 专利号: 201910519508.5
( 3 ) 基于肖特基结的线偏振光探测器及其制备方法, 2019, 第 5 作者, 专利号: 201910706871.8
( 4 ) 基于核壳纳米线的柔性偏振光探测器及制备方法, 2019, 第 4 作者, 专利号: 201910771937.1

出版信息

   
发表论文
(1) Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors, Physical Review Applied, 2021, 通讯作者
(2) Carrier-stabilized hexagonal Ge, Physical Review B, 2021, 通讯作者
(3) Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge1–xSnx alloys, Science Bulletin, 2021, 第 5 作者
(4) Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides, Light: Science & Applications, 2021, 通讯作者
(5) Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic, Applied Physics Letters, 2021, 通讯作者
(6) Orbital Localization induced magnetization in nonmetal-doped Phosphorene, Journal of Physics D: Applied Physics, 2020, 通讯作者
(7) Realistic dimension-independent approach for charged-defect calculations in semiconductors, Phys. Rev. B, 2020, 通讯作者
(8) First-principles Study of Defect Control in Thin-Film Solar Cell Materials, SCIENCE CHINA Physics, Mechanics & Astronomy, 2020, 第 1 作者
(9) Reviewing and understanding the stability mechanism of halide perovskite solar cells, InfoMat, 2020, 通讯作者
(10) Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure, Small, 2020, 其他(合作组作者)
(11) A systematic study of the negative thermal expansion in zinc-blende and diamond-like semiconductors, New Journal of Physics, 2019, 通讯作者
(12) High‐Efficiency Single‐Component Organic Light‐Emitting Transistors, Advanced Materials, 2019, 第 8 作者
(13) Design Principles of p-Type Transparent Conductive Materials, ACS Appl. Mater. Interfaces, 2019, 通讯作者
(14) Thickness-Dependent Ultrafast Photonics of SnS2 Nanolayers for Optimizing Fiber Lasers, ACS Appl. Nano Mater., 2019, 通讯作者
(15) High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism, Nanoscale, 2019, 通讯作者
(16) Abnormal diffusion behaviors of Cu atoms in van der Waals layered material MoS2, J. Mater. Chem. C, 2019, 通讯作者
(17) Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse, Advanced Functional Materials, 2019, 第 4 作者
(18) Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors, Advanced Materials, 2019, 其他(合作组作者)
(19) The Coulomb interaction in van der Waals heterostructures, Sci. China Phys., 2019, 第 3 作者
(20) Unraveling the Defect Emission and Exciton–Lattice Interaction in Bilayer WS2, J. Phys. Chem. C, 2019, 第 7 作者
(21) Electronic structure and exciton shifts in Sb-doped MoS2 monolayer, NPJ 2D Mater. Appl., 2019, 第 4 作者
(22) Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z 2 Topological Insulator, Chinese Physics Letters, 2018, 第 1 作者
(23) Comment on Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors, Physical Review Letters, 2018, 第 1 作者
(24) Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS 3 ), Nanotechnology, 2018, 第 6 作者
(25) Tuning transport performance in two-dimensional metal-organic framework semiconductors: Role of the metal d band, Applied Physics Letters, 2018, 通讯作者
(26) Band structure engineering and defect control of oxides for energy applications, Chin. Phys. B, 2018, 第 1 作者
(27) Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications, J. Mater. Chem. C, 2018, 通讯作者
(28) Metal and ligand effects on the stability and electronic properties of crystalline two-dimensional metal-benzenehexathiolate coordination compounds, J. Phys. Cond. Mater., 2018, 通讯作者
(29) Structural Phase Transition and a Mutation of Electron Mobility in ZnxCd1−xO Alloys, Chin. Phys. Lett., 2018, 通讯作者
(30) Unified theory of direct or indirect band-gap nature of conventional semiconductors, Phys.Rev. B, 2018, 第 2 作者
(31) Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic, Advanced Functional Materials, 2018, 第 6 作者
(32) Modulation of electronic and optical properties in mixed halide perovskites CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x), Applied Physics Letters, 2017, 第 3 作者
(33) Light induced double ‘on’ state anti-ambipolar behavior and self-driven photoswitching in p-WSe 2 /n-SnS 2 heterostructures, 2D Materials, 2017, 第 6 作者
(34) Earth-Abundant and Non-Toxic SiX (X = S, Se) Monolayers as Highly Efficient Thermoelectric Materials, The Journal of Physical Chemistry C, 2017, 第 3 作者
(35) Composition-tunable 2D SnSe2(1−x)S2x alloys towards efficient bandgap engineering and high performance (opto)electronics, J. Mater. Chem. C, 2017, 第 7 作者
(36) Stable 6%-efficient Sb2Se3 solar cells with a ZnO buffer layer, Nature Energy, 2017, 第 5 作者
(37) Suppress carrier recombination by introducing defects: The case of Si solar cell, Appl. Phys. Lett., 2016, 第 3 作者
(38) Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors, Physical Review Letters, 2016, 第 1 作者
(39) Wavelength dependent UV-Vis photodetectors from SnS2 flakes, RSC Adv., 2016, 第 4 作者
(40) Tailoring the interfacial exchange coupling of perpendicularly magnetized Co/L10-Mn1.5Ga bilayers, J. Phys. D: Appl. Phys., 2016, 通讯作者
(41) Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces., Phys. Rev. B, 2015, 第 1 作者
(42) Stable interface structures of heterovalent semiconductor superlattices: The case of (GaSb)n(ZnTe)n., Comput. Mater. Sci., 2015, 第 1 作者
(43) Sulfur vacancy activated field effect transistors based on ReS2 nanosheets, Nanoscale, 2015, 第 2 作者
(44) Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets, Nanoscale, 2015, 第 2 作者
(45) The origin of electronic band structure anomaly in topological crystalline insulator group-IV tellurides, npj Computational Materials, 2015, 第 2 作者
(46) Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys., Phys. Rev. B, 2014, 通讯作者
(47) Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene, Phys. Rev. X, 2014, 第 2 作者
(48) Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors, Phys. Rev. B, 2013, 第 1 作者
(49) Origin of Reduced Efficiency in Cu(In,Ga)Se _2 Solar Cells With High Ga Concentration: Alloy Solubility Versus Intrinsic Defects, EEE Journal of Photovoltaics , 2013, 第 3 作者
(50) First-principles study of magnetic properties in Mo-doped graphene, JOURNAL OF PHYSICS-CONDENSED MATTER , 2013, 第 2 作者
(51) Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures., Phys. Rev. B, 2012, 第 1 作者
(52) Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs, Phys. Rev. B, 2010, 第 1 作者
(53) Origin of antiferromagnetism in CoO: A density functional theory study ,  Appl. Phys. Lett., 2010, 第 1 作者
(54) Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots.,  J. Phys. Chem. C, 2010, 第 1 作者
(55) Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods, J. Appl. Phys., 2009, 第 2 作者
(56) Multiple valley couplings in nanometer Si metal–oxide–semiconductor–field–effect transistors., J. Appl. Phys., 2008, 第 1 作者
(57) A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs,  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 第 2 作者
(58) 

科研活动

   
科研项目
( 1 ) 先进半导体热电材料微观机理的第一性原理研究及性能优化和设计, 主持, 国家级, 2015-01--2018-12
( 2 ) 环境友好型高稳定性太阳能电池的材料设计与器件研究, 参与, 国家级, 2016-07--2020-06
( 3 ) 透明导电氧化物纳米结构的掺杂、形状及尺寸效应的第一性原理研究, 主持, 国家级, 2012-01--2014-12
( 4 ) 透明导电体的物理机理研究与新材料设计, 参与, 国家级, 2017-01--2021-12
( 5 ) 中国科学院青年创新促进会会员, 主持, 部委级, 2017-06--2020-12
( 6 ) 温度引起的半导体能带结构和输运性质的 重整化:电-声子相互作用效应, 主持, 国家级, 2019-01--2022-12
( 7 ) 半导体中的缺陷物理与掺杂调控, 主持, 国家级, 2020-01--2022-12
( 8 ) 硅基发光基础理论及器件关键技术, 参与, 国家级, 2019-08--2023-07
( 9 ) 万小时工作寿命的钙钛矿太阳电池关键技术, 参与, 国家级, 2020-11--2024-10
参与会议
(1)A realistic dimension-independent approach for charged defect calculations in semiconductors   中国物理学会2019秋季物理年会   2019-09-19
(2)Diffusion of Impurities in Semiconductors: Fundamental Understanding and Design   2017-08-20
(3)Diffusion of Impurities in Energy Materials: Fundamental Understanding and Design   2017中国材料大会   2017-07-10