基本信息
郑军 男 硕导 中国科学院半导体研究所
电子邮件： zhengjun@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号
邮政编码：
电子邮件： zhengjun@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号
邮政编码：
研究领域
硅基材料外延、光电子器件及光电集成芯片
招生信息
招生专业
0805Z2-半导体材料与器件
招生方向
硅基光电子学
半导体材料与器件物理
半导体材料与器件物理
教育背景
2006-09--2011-06 中国科学院研究生院 博士
2002-09--2006-06 北京理工大学 本科
2002-09--2006-06 北京理工大学 本科
工作经历
工作简历
2015-01~现在, 中国科学院半导体研究所, 副研究员
2011-07~2014-12,中国科学院半导体研究所, 助理研究员
2011-07~2014-12,中国科学院半导体研究所, 助理研究员
教授课程
低维材料制备与应用
低维材料制备、表征及应用
低维材料制备、表征及应用
专利与奖励
专利成果
[1] 贺晨, 郑军, 崔金来, 吴亦旸, 成步文. 一种紫外探测器及其制备方法. CN: CN118099260A, 2024-05-28.
[2] 崔金来, 郑军, 吴亦旸, 贺晨, 刘香全, 黄秦兴, 刘智, 左玉华, 成步文. 光生载流子场分布的等时瞬态叠加方法及装置. CN: CN118016214A, 2024-05-10.
[3] 崔金来, 郑军, 吴亦旸, 贺晨, 刘香全, 黄秦兴, 刘智, 左玉华, 成步文. 硅基锗锡厚膜的生长方法. CN: CN118007241A, 2024-05-10.
[4] 吴亦旸, 郑军, 崔金来, 贺晨, 刘香全, 黄秦兴, 刘智, 左玉华, 成步文. 一种肖特基势垒二极管器件结构. CN: CN117790541A, 2024-03-29.
[5] 李嘉仪, 杨亚洲, 叶正澜, 左玉华, 郑军, 刘智, 成步文. 钙钛矿单晶的抛光方法及其应用. CN: CN117794341A, 2024-03-29.
[6] 崔金来, 郑军, 刘智, 左玉华, 成步文. 双色波导光电探测器及其制备方法. CN 116110983 A, 2023-05-12.
[7] 郑军, 刘香全, 刘智, 左玉华, 成步文. 红外光电器件及其制备方法与硅基光电集 成芯片. CN 116344659 A, 2023-06-27.
[8] 郑军, 刘智, 左玉华, 成步文. 半导体紫外探测器及其制备方法. CN: CN115548148A, 2022-12-30.
[9] 郑军, 刘智, 成步文. 半导体红外探测器及其制备方法. CN: CN115621339A, 2023-01-17.
[10] 郑军, 刘智, 左玉华, 成步文. 红外探测器. CN: CN115295640A, 2022-11-04.
[11] 刘陶然, 刘香全, 陈丹, 杨亚洲, 左玉华, 郑军, 刘智, 成步文. 光谱探测器及其制备方法. CN: ZL114649423A, 2022-06-21.
[12] 庞雅青, 刘智, 成步文, 郑军. 雪崩光电探测器及其制备方法. CN: CN114566557A, 2022-05-31.
[13] 杨亚洲, 刘陶然, 陈丹, 叶正澜, 李嘉仪, 左玉华, 郑军, 刘智, 成步文. 钙钛矿单晶的生长方法及装置. CN: ZL114197044A, 2022-03-18.
[14] 庞雅青, 刘智, 成步文, 郑军, 薛春来. 波导耦合的雪崩光电探测器及其制备方法. CN: CN113707750A, 2021-11-26.
[15] 庞雅青, 刘智, 成步文, 郑军, 薛春来. 单光子雪崩光电探测器及其制备方法. CN: CN113707751A, 2021-11-26.
[16] 李明明, 郑军, 刘香全, 牛超群, 刘智, 成步文. 一种光电探测器及其制备方法. CN: CN115621336A, 2023-01-17.
[17] 刘智, 成步文, 郑军, 薛春来. 一种具有非对称结的硅基探测器及其制备方法. CN: CN113471325A, 2021-10-01.
[18] 刘智, 成步文, 郑军, 薛春来. 一种宽度渐变的硅基探测器及其制备方法. CN: CN113488557A, 2021-10-08.
[19] 陈丹, 刘陶然, 左玉华, 郑军, 刘智, 成步文. 一种钙钛矿薄膜的制备方法及钙钛矿LED. CN: CN113066947A, 2021-07-02.
[20] 万丰硕, 薛春来, 徐国印, 刘智, 郑军, 左玉华, 成步文. GeSn/钙钛矿异质结宽光谱探测器及其制作方法. CN: CN112670366A, 2021-04-16.
[21] 阿波斯, 左玉华, 郑军, 刘智, 成步文. 钙钛矿太阳电池PN结及其制备方法. CN: CN112397650B, 2023-02-07.
[22] 阿波斯, 左玉华, 郑军, 刘智, 成步文. 钙钛矿太阳电池PN结及其制备方法. CN: CN112397650A, 2021-02-23.
[23] 刘智, 成步文, 郑军, 薛春来. 一种波导耦合的硅基光电探测器及其制备方法. CN: CN112038441A, 2020-12-04.
[24] 刘智, 成步文, 郑军, 薛春来. 一种波导耦合的光电探测器及其制备方法. CN: CN111952399A, 2020-11-17.
[25] 刘智, 成步文, 郑军, 薛春来. 一种波导耦合的光电探测器及其制备方法. CN: CN111952399B, 2022-02-25.
[26] 郑军, 成步文. 一种肖特基二极管及制备方法. CN: CN111540788A, 2020-08-14.
[27] 马培培, 郑军, 成步文. 场效应晶体管器件. CN: CN111341840A, 2020-06-26.
[28] 刘陶然, 左玉华, 郑军, 陈丹, 刘智, 成步文. 增强紫外波段响应度的硅雪崩光电二极管及其制备方法. CN: CN112864268A, 2021-05-28.
[29] 刘香全, 郑军, 成步文. 硅基IV族合金材料及其外延方法. CN: CN110777436A, 2020-02-11.
[30] 郑军, 牛超群, 刘智, 左玉华, 薛春来, 成步文. 集成加热型锗波导热光调制器结构及其制备方法. CN: CN112099246B, 2022-03-08.
[31] 周琳, 刘陶然, 左玉华, 郑军, 刘智, 成步文. 背接触式钙钛矿发光二极管. CN: CN110085756A, 2019-08-02.
[32] 周琳, 刘陶然, 左玉华, 郑军, 刘智, 成步文. 用于碳基钙钛矿太阳能电池的介孔碳电极及其制备方法. CN: CN109671849A, 2019-04-23.
[33] 郑军, 成步文, 王启明. 可见-短波红外探测器及其制备方法. CN: CN108346713A, 2018-07-31.
[34] 郑军, 成步文. 一种肖特基二极管及制备方法. CN: CN107799610A, 2018-03-13.
[35] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种SiO x 基锂离子电池复合负极材料的制备方法. 中国: CN105826560A, 2016-08-03.
[36] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种SiO x 基锂离子电池复合负极材料的制备方法. CN: CN105826560A, 2016-08-03.
[37] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种Cu@SiO 2 核壳结构的制备方法. 中国: CN105536788B, 2018-09-04.
[38] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种Si基复合负极材料及其锂电池的制备方法. CN: CN105406134A, 2016-03-16.
[39] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种CuSiO 2 核壳结构的制备方法. CN: CN105536788A, 2016-05-04.
[40] 郑军, 成步文, 王启明. 适用LED光源泵浦的掺铒光放大器材料的制备方法. CN: CN103834916A, 2014-06-04.
[41] 郑军, 成步文, 王启明. 单光子源器件的制备方法. CN: CN103812003A, 2014-05-21.
[42] 李乐良, 郑军, 左玉华, 成步文, 王启明, 郑智雄. 下转换荧光材料的制备方法. CN: CN102977880A, 2013-03-20.
[2] 崔金来, 郑军, 吴亦旸, 贺晨, 刘香全, 黄秦兴, 刘智, 左玉华, 成步文. 光生载流子场分布的等时瞬态叠加方法及装置. CN: CN118016214A, 2024-05-10.
[3] 崔金来, 郑军, 吴亦旸, 贺晨, 刘香全, 黄秦兴, 刘智, 左玉华, 成步文. 硅基锗锡厚膜的生长方法. CN: CN118007241A, 2024-05-10.
[4] 吴亦旸, 郑军, 崔金来, 贺晨, 刘香全, 黄秦兴, 刘智, 左玉华, 成步文. 一种肖特基势垒二极管器件结构. CN: CN117790541A, 2024-03-29.
[5] 李嘉仪, 杨亚洲, 叶正澜, 左玉华, 郑军, 刘智, 成步文. 钙钛矿单晶的抛光方法及其应用. CN: CN117794341A, 2024-03-29.
[6] 崔金来, 郑军, 刘智, 左玉华, 成步文. 双色波导光电探测器及其制备方法. CN 116110983 A, 2023-05-12.
[7] 郑军, 刘香全, 刘智, 左玉华, 成步文. 红外光电器件及其制备方法与硅基光电集 成芯片. CN 116344659 A, 2023-06-27.
[8] 郑军, 刘智, 左玉华, 成步文. 半导体紫外探测器及其制备方法. CN: CN115548148A, 2022-12-30.
[9] 郑军, 刘智, 成步文. 半导体红外探测器及其制备方法. CN: CN115621339A, 2023-01-17.
[10] 郑军, 刘智, 左玉华, 成步文. 红外探测器. CN: CN115295640A, 2022-11-04.
[11] 刘陶然, 刘香全, 陈丹, 杨亚洲, 左玉华, 郑军, 刘智, 成步文. 光谱探测器及其制备方法. CN: ZL114649423A, 2022-06-21.
[12] 庞雅青, 刘智, 成步文, 郑军. 雪崩光电探测器及其制备方法. CN: CN114566557A, 2022-05-31.
[13] 杨亚洲, 刘陶然, 陈丹, 叶正澜, 李嘉仪, 左玉华, 郑军, 刘智, 成步文. 钙钛矿单晶的生长方法及装置. CN: ZL114197044A, 2022-03-18.
[14] 庞雅青, 刘智, 成步文, 郑军, 薛春来. 波导耦合的雪崩光电探测器及其制备方法. CN: CN113707750A, 2021-11-26.
[15] 庞雅青, 刘智, 成步文, 郑军, 薛春来. 单光子雪崩光电探测器及其制备方法. CN: CN113707751A, 2021-11-26.
[16] 李明明, 郑军, 刘香全, 牛超群, 刘智, 成步文. 一种光电探测器及其制备方法. CN: CN115621336A, 2023-01-17.
[17] 刘智, 成步文, 郑军, 薛春来. 一种具有非对称结的硅基探测器及其制备方法. CN: CN113471325A, 2021-10-01.
[18] 刘智, 成步文, 郑军, 薛春来. 一种宽度渐变的硅基探测器及其制备方法. CN: CN113488557A, 2021-10-08.
[19] 陈丹, 刘陶然, 左玉华, 郑军, 刘智, 成步文. 一种钙钛矿薄膜的制备方法及钙钛矿LED. CN: CN113066947A, 2021-07-02.
[20] 万丰硕, 薛春来, 徐国印, 刘智, 郑军, 左玉华, 成步文. GeSn/钙钛矿异质结宽光谱探测器及其制作方法. CN: CN112670366A, 2021-04-16.
[21] 阿波斯, 左玉华, 郑军, 刘智, 成步文. 钙钛矿太阳电池PN结及其制备方法. CN: CN112397650B, 2023-02-07.
[22] 阿波斯, 左玉华, 郑军, 刘智, 成步文. 钙钛矿太阳电池PN结及其制备方法. CN: CN112397650A, 2021-02-23.
[23] 刘智, 成步文, 郑军, 薛春来. 一种波导耦合的硅基光电探测器及其制备方法. CN: CN112038441A, 2020-12-04.
[24] 刘智, 成步文, 郑军, 薛春来. 一种波导耦合的光电探测器及其制备方法. CN: CN111952399A, 2020-11-17.
[25] 刘智, 成步文, 郑军, 薛春来. 一种波导耦合的光电探测器及其制备方法. CN: CN111952399B, 2022-02-25.
[26] 郑军, 成步文. 一种肖特基二极管及制备方法. CN: CN111540788A, 2020-08-14.
[27] 马培培, 郑军, 成步文. 场效应晶体管器件. CN: CN111341840A, 2020-06-26.
[28] 刘陶然, 左玉华, 郑军, 陈丹, 刘智, 成步文. 增强紫外波段响应度的硅雪崩光电二极管及其制备方法. CN: CN112864268A, 2021-05-28.
[29] 刘香全, 郑军, 成步文. 硅基IV族合金材料及其外延方法. CN: CN110777436A, 2020-02-11.
[30] 郑军, 牛超群, 刘智, 左玉华, 薛春来, 成步文. 集成加热型锗波导热光调制器结构及其制备方法. CN: CN112099246B, 2022-03-08.
[31] 周琳, 刘陶然, 左玉华, 郑军, 刘智, 成步文. 背接触式钙钛矿发光二极管. CN: CN110085756A, 2019-08-02.
[32] 周琳, 刘陶然, 左玉华, 郑军, 刘智, 成步文. 用于碳基钙钛矿太阳能电池的介孔碳电极及其制备方法. CN: CN109671849A, 2019-04-23.
[33] 郑军, 成步文, 王启明. 可见-短波红外探测器及其制备方法. CN: CN108346713A, 2018-07-31.
[34] 郑军, 成步文. 一种肖特基二极管及制备方法. CN: CN107799610A, 2018-03-13.
[35] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种SiO x 基锂离子电池复合负极材料的制备方法. 中国: CN105826560A, 2016-08-03.
[36] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种SiO x 基锂离子电池复合负极材料的制备方法. CN: CN105826560A, 2016-08-03.
[37] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种Cu@SiO 2 核壳结构的制备方法. 中国: CN105536788B, 2018-09-04.
[38] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种Si基复合负极材料及其锂电池的制备方法. CN: CN105406134A, 2016-03-16.
[39] 张均营, 李传波, 郑军, 左玉华, 薛春来, 成步文. 一种CuSiO 2 核壳结构的制备方法. CN: CN105536788A, 2016-05-04.
[40] 郑军, 成步文, 王启明. 适用LED光源泵浦的掺铒光放大器材料的制备方法. CN: CN103834916A, 2014-06-04.
[41] 郑军, 成步文, 王启明. 单光子源器件的制备方法. CN: CN103812003A, 2014-05-21.
[42] 李乐良, 郑军, 左玉华, 成步文, 王启明, 郑智雄. 下转换荧光材料的制备方法. CN: CN102977880A, 2013-03-20.
出版信息
发表论文
[1] JINLAI CUI, JUN ZHENG, YUPENG ZHU, XIANGQUAN LIU, YIYANG WU, QINXING HUANG, YAZHOU YANG, ZHIPENG LIU, ZHI LIU, YUHUA ZUO, BUWEN CHENG. High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system. PHOTONICS RESEARCH[J]. 2024, 第 2 作者 通讯作者 12(4): 767-773, http://lib.cqvip.com/Qikan/Article/Detail?id=7112357366.
[2] Huang, Qinxing, Zheng, Jun, Zhu, Yupeng, Liu, Xiangquan, Liu, Zhipeng, Yang, Yazhou, Cui, Jinlai, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Lateral GeSn p-i-n photodetectors on insulator prepared by the rapid melting growth method. OPTICS LETTERS[J]. 2024, 第 2 作者 通讯作者 49(5): 1365-1368, http://dx.doi.org/10.1364/OL.516928.
[3] Peipei Ma, Jun Zheng, Xiangquan Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng. Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector. JOURNAL OF SEMICONDUCTORS[J]. 2024, 第 2 作者 通讯作者 45(2): 51-56, http://lib.cqvip.com/Qikan/Article/Detail?id=7111394521.
[4] Jinlai Cui, Rui Fang, Xiangquan Liu, Yiyang Wu, Qinxing Huang, Zhipeng Liu, Fei Yi, Zhi Liu, 左玉华, Buwen Cheng, Jun Zheng. Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application. Acs Photonics[J]. 2024, 第 11 作者 通讯作者 11(null): 4126-4133,
[5] Xiangquan Liu, Jun Zheng, Qinxing Huang, Jinlai Cui, Yupeng Zhu, Yazhou Yang, Zhi Liu, Yuhua Zuo, Buwen Cheng. Investigation of temperature and H2 on GePb/Ge multiple quantum well growth. Journal of Physics D: Applied Physics[J]. 2024, 第 2 作者 通讯作者 57(null): 245108,
[6] Yazhou Yang, Yuankai Song, Jiayi Li, Zhenglan Ye, Dan Chen, Qinxing Huang, Yupeng Zhu, Congwei Shi, Xiangquan Liu, Guangze Zhang, Tao Men, Yuhua Zuo, Jun Zheng, Lei Zhao, Chunlan Zhou, Zhi Liu, Buwen Cheng. Spatial Electrode Modulation Strategy for the Perovskite Single Crystal Photodetector. Acs Photonics[J]. 2024, 第 13 作者 通讯作者 11(9): 3811-3821,
[7] Chen, Dan, Liu, Taoran, Zuo, Yuhua, Li, Chuanbo, Zheng, Jun, Liu, Zhi, Liu, Baoyu, Cheng, Buwen. Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers. TSINGHUA SCIENCE AND TECHNOLOGY[J]. 2023, 第 5 作者28(1): 131-140,
[8] Jinlai Cui, Jun Zheng, Yupeng Zhu, Xiangquan Liu, Qingxing Huang, Zhi Liu, Yuhua Zuo, Buwen Cheng. Sn component gradient GeSn photodetector with 3 dB bandwidth over 50 GHz for extending L band telecommunication. Optics Letters[J]. 2023, 第 2 作者 通讯作者 48(23): 6148-6151,
[9] Huang, Qinxing, Liu, Xiangquan, Zheng, Jun, Yang, YaZhou, Zhang, Diandian, Pang, Yaqing, Cui, Jinlai, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Photoluminescence characterization of GeSn prepared by rapid melting growth method. JOURNAL OF LUMINESCENCE[J]. 2023, 第 3 作者 通讯作者 255: http://dx.doi.org/10.1016/j.jlumin.2022.119623.
[10] Xueyi Zheng, Jun Zheng, Chen He, Xiangquan Liu, Yuhua Zuo, Buwen Cheng, Chuanbo Li. Metalorganic vapor-phase epitaxy of β-(AlxGa1-x)2O3 on (2 0 1) Ga2O3 substrates. Journal of Crystal Growth[J]. 2023, 第 2 作者 通讯作者 603: 127014,
[11] Yazhou Yang, Xiangquan Liu, Taoran Liu, Dan Chen, 叶正澜, Jiayi Li, 黄秦兴, Yupeng Zhu, Yaqing Pang, Diandian Zhang, Zhi Liu, Buwen Cheng, Jun Zheng, 左玉华. High Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR.. Advanced Optical Materials[J]. 2023, 第 13 作者 通讯作者 2300708,
[12] Xiangquan Liu, Jun Zheng, Qinxing Huang, Yaqing Pang, Diandian Zhang, Yupeng Zhu, Zhi Liu, Yuhua Zuo, Buwen Cheng. Growth and characterization of GePb/Ge multiple quantum wells. Journal of Alloys and Compounds[J]. 2023, 第 2 作者 通讯作者 934: 167954,
[13] 陈丹, 叶正澜, 杨亚洲, 刘陶然, 李嘉仪, 刘香全, 左玉华, 郑军, 刘智, 成步文. Impact of Strontium Doping on Quasi-Two-Dimensional Perovskite Layers for Sky-Blue Light-Emitting Diodes. ACS Applied Optical Materials[J]. 2023, 第 8 作者1(8): 1405-1413, 10.1021/acsaom.3c00182.
[14] Lin, Guochen, Zhao, Yue, Yu, Kai, Veeramalai, Chandrasekar Perumal, Ma, Runze, Zheng, Jun, Cheng, Buwen, Zhang, Xiaoming, Li, Chuanbo. Dramatic increase in SWIR detection for GeSn strip detector with graphene hybrid structure. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2023, 第 6 作者945: http://dx.doi.org/10.1016/j.jallcom.2023.169287.
[15] Ma, Peipei, Zheng, Jun, Zhang, Yabao, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Investigation on n-Type (-201) beta-Ga2O3 Ohmic Contact via Si Ion Implantation. TSINGHUA SCIENCE AND TECHNOLOGY[J]. 2023, 第 2 作者 通讯作者 28(1): 150-154,
[16] 刘香全, 刘陶然, 陈丹, 杨亚洲, 叶正澜, 左玉华, 郑军, 刘智, 成步文. Broad-Spectrum Germanium Photodetector Based on the Ytterbium-Doped Perovskite Nanocrystal Downshifting Effect. ACS Appl. Opt. Mater.[J]. 2023, 第 7 作者1(1): 507-512, 10.1021/acsaom.2c00139.
[17] Li, Mingming, Zheng, Jun, Liu, Xiangquan, Zhu, Yupeng, Niu, Chaoqun, Pang, Yaqing, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 um for mid-infrared Si photonics. APPLIED PHYSICS LETTERS[J]. 2022, 第 2 作者 通讯作者 120(12): http://dx.doi.org/10.1063/5.0084940.
[18] Liu, Xiangquan, Zheng, Jun, Niu, Chaoqun, Liu, Taoran, Huang, Qinxing, Li, Mingming, Zhang, Diandian, Pang, Yaqing, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors. PHOTONICS RESEARCH[J]. 2022, 第 2 作者 通讯作者 10(7): 1567-1574,
[19] Mingming Li, Jun Zheng, Xiangquan Liu, Chaoqun Niu, Yupeng Zhu, Yaqing Pang, Zhi Liu, Yazhou Yang, Yuhua zuo, Buwen Cheng. GeSn resonance cavity enhanced photodetector with gold bottom reflector for the L band optical communication. Optics Letters[J]. 2022, 第 2 作者 通讯作者 47(17): 4315,
[20] Abolfazl Amraeinia, Yuhua Zuo, Jun Zheng, Zhilu, zhang guangze, luo liping, buwen cheng, Xiaoping Zou, Chuanbo Li. Interface modification of TiO2 electron transport layer with PbCl2 for perovskiote solar cells with carbon electrode. Tsinghua Science & Technology[J]. 2022, 第 3 作者
[21] Yupeng Zhu, Chaoqun Niu, Liu Zhi, Xiangquan Liu, Yazhou Yang, Qinxing Huang, Jinlai Cui, Jun Zheng, Yuhua Zuo, Buwen Cheng. Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform. Optics Express[J]. 2022, 第 8 作者30(23): 41943-41953,
[22] Li, Xiuli, Peng, Linzhi, Liu, Zhi, Zhou, Zhiqi, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Chen, Baile, Cheng, Buwen. 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application. PHOTONICS RESEARCH[J]. 2021, 第 5 作者9(4): 494-500, https://www.webofscience.com/wos/woscc/full-record/WOS:000636997400020.
[23] Liu, Baoyu, Zou, Xiaoping, Chen, Dan, Liu, Taoran, Zuo, Yuhua, Zheng, Jun, Liu, Zhi, Cheng, Buwen. Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite. TSINGHUA SCIENCE AND TECHNOLOGY[J]. 2021, 第 6 作者26(4): 496-504, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7098080&detailType=1.
[24] Rehman, Sajid Ur, Butt, Faheem K, Tariq, Zeeshan, Zhang, Xiaoming, Zheng, Jun, Naydenov, Genadi, Ul Haq, Bakhtiar, Li, Chuanbo. Elucidating the role of lattice thermal conductivity in pi-phases of IV-VI monochalcogenides for highly efficient thermoelectric performance. INTERNATIONAL JOURNAL OF ENERGY RESEARCH[J]. 2021, 第 5 作者45(4): 6369-6382, http://dx.doi.org/10.1002/er.6174.
[25] 马润泽, 张晓明, 冯帅, 郑军, 徐应强, 李传波. 红外光电探测技术研究现状及展望（特邀）. 光子学报[J]. 2021, 第 4 作者50(10): 253-268, https://doi.org/10.3788/gzxb20215010.1004006.
[26] Liu, Xiangquan, Zheng, Jun, Li, Mingming, Wan, Fengshuo, Niu, Chaoqun, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2021, 第 2 作者 通讯作者 54(43): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000682143300001.
[27] Tariq, Zeeshan, Rehman, Sajid Ur, Zhang, Xiaoming, Butt, Faheem K, Feng, Shuai, Ul Haq, Bakhtiar, Zheng, Jun, Cheng, Buwen, Li, Chuanbo. Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion. JOURNAL OF MATERIALS SCIENCE[J]. 2021, 第 7 作者56(21): 12270-12284, http://dx.doi.org/10.1007/s10853-021-06069-9.
[28] Liu, Xiangquan, Zheng, Jun, Zhao, Yue, Li, Mingming, Peng, Linzhi, Wan, Fengshuo, Niu, Chaoqun, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. Germanium lead alloy on insulator grown by rapid melting growth. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 第 2 作者 通讯作者 864: http://dx.doi.org/10.1016/j.jallcom.2021.158798.
[29] 郑军, 刘香全, 李明明, 刘智, 左玉华, 薛春来, 成步文. 新型硅基IV族合金材料生长及光电器件研究进展（特邀）. 光子学报[J]. 2021, 第 1 作者50(10): 217-226, https://doi.org/10.3788/gzxb20215010.1004002.
[30] Ma, Peipei, Zhang, Junying, Zheng, Jun, Cheng, Buwen, Zhang, Xiaoming, Li, Chuanbo. Double-shell-structured Si@SiOx@C composite material for long-life lithium-ion storage. IONICS[J]. 2020, 第 3 作者26(7): 3275-3280, https://www.webofscience.com/wos/woscc/full-record/WOS:000545159700009.
[31] Liu, Xiangquan, Zheng, Jun, Li, Mingming, Peng, Linzhi, Wang, Nan, Li, Xiuli, Zuo, Yuhua, Liu, Zhi, Xue, Chunlai, Cheng, Buwen. Epitaxial growth and characterization of Ge(1-x-y)Sn(x)Pb(y )ternary alloys. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2020, 第 2 作者 通讯作者 829: http://dx.doi.org/10.1016/j.jallcom.2020.154505.
[32] Wang, Suyuan, Wu, Qiang, Zheng, Jun, Zhang, Bin, Huang, Song, Jia, Zixi, Yao, Jianghong, Zhou, Qingjun, Yang, Li, Xu, Jingjun, Cheng, Buwen. Well-aligned periodic germanium nanoisland arrays with large areas and improved field emission performance induced by femtosecond laser. APPLIED SURFACE SCIENCE[J]. 2020, 第 3 作者 通讯作者 508: http://dx.doi.org/10.1016/j.apsusc.2020.145308.
[33] Xiangquan Liu, Jun Zheng, Xiuli Li, Chaoqun Niu, Linzhi Peng, Fengshuo Wan, Zhi Liu, Yuhua Zuo, Chunlai Xue, Buwen Cheng. Investigation of lead surface segregation during germanium–lead epitaxial growth. JOURNAL OF MATERIALS SCIENCE[J]. 2020, 第 2 作者 通讯作者 55(11): 4762-4768, https://www.webofscience.com/wos/woscc/full-record/WOS:000511972700017.
[34] Peng, Linzhi, Li, Xiuli, Zheng, Jun, Liu, Xiangquan, Li, Mingming, Liu, Zhi, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen. Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs. JOURNAL OF LUMINESCENCE[J]. 2020, 第 3 作者228: http://dx.doi.org/10.1016/j.jlumin.2020.117539.
[35] Wang, Suyuan, Wu, Qiang, Zheng, Jun, Zhang, Bin, Yao, Jianghong, Zhou, Qingjun, Yang, Li, Xu, Jingjun, Cheng, Buwen. GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 第 3 作者 通讯作者 59(3): http://dx.doi.org/10.35848/1347-4065/ab705f.
[36] Wang, Nan, Xue, Chunlai, Wan, Fengshuo, Zhao, Yue, Xu, Guoyin, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn. SCIENTIFIC REPORTS[J]. 2020, 第 7 作者10(1): http://dx.doi.org/10.1038/s41598-020-63152-y.
[37] Li, Xiuli, Peng, Linzhi, Liu, Zhi, Liu, Xiangquan, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. High-power back-to-back dual-absorption germanium photodetector. OPTICS LETTERS[J]. 2020, 第 5 作者45(6): 1358-1361, http://dx.doi.org/10.1364/OL.388011.
[38] Peng, Linzhi, Li, Xiuli, Liu, Zhi, Liu, Xiangquan, Zheng, Jun, Xu, Chunlai, Zuo, Yuhua, Cheng, Buwen. Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates. PHOTONICS RESEARCH[J]. 2020, 第 5 作者8(6): 899-903, http://lib.cqvip.com/Qikan/Article/Detail?id=7102332515.
[39] Chen, Dan, Liu, Taoran, Zuo, Yuhua, Zou, Xiaoping, Zheng, Jun, Cheng, Buwen. Enhanced effect of 1,2-dichlorobenzene on the property of PC61BM and perovskite films for planar heterojunction perovskite solar cells. ORGANIC ELECTRONICS[J]. 2020, 第 5 作者77: http://dx.doi.org/10.1016/j.orgel.2019.105543.
[40] Liu, Zhi, Li, Xiuli, Niu, Chaoqun, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen. 56 Gbps high-speed Ge electro-absorption modulator. PHOTONICS RESEARCH[J]. 2020, 第 4 作者8(10): 1648-1652, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6913739&detailType=1.
[41] Niu, Chaoqun, Liu, Zhi, Li, Xiuli, Liu, Xiangquan, Wan, Fengshuo, Zheng, Jun, Cheng, Buwen, Xue, Chunlai, Zuo, Yuhua. High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2020, 第 6 作者32(18): 1183-1186, http://dx.doi.org/10.1109/LPT.2020.3016028.
[42] Li, XiuLi, Liu, Zhi, Peng, LinZhi, Liu, XiangQuan, Wang, Nan, Zhao, Yue, Zheng, Jun, Zuo, YuHua, Xue, ChunLai, Cheng, BuWen. High-Performance Germanium Waveguide Photodetectors on Silicon. CHINESE PHYSICS LETTERS[J]. 2020, 第 7 作者37(3): 38503-85, https://cpl.iphy.ac.cn/10.1088/0256-307X/37/3/038503.
[43] Peng, Linzhi, Li, Xiuli, Zheng, Jun, Liu, Xiangquan, Li, Mingming, Liu, Zhi, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen. Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs. JOURNAL OF LUMINESCENCE[J]. 2020, 第 3 作者228: http://dx.doi.org/10.1016/j.jlumin.2020.117539.
[44] Liu, Xiangquan, Zheng, Jun, Li, Xiuli, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. Study of GePb photodetectors for shortwave infrared detection. OPTICS EXPRESS[J]. 2019, 第 2 作者 通讯作者 27(13): 18038-18043, http://dx.doi.org/10.1364/OE.27.018038.
[45] Zhang, Junying, Ma, Peipei, Zhang, Xiaoming, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen, Li, Chuanbo. Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes. ENERGY TECHNOLOGY[J]. 2019, 第 5 作者7(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000466486200014.
[46] Zhao, Yue, Wang, Nan, Yu, Kai, Zhang, Xiaoming, Li, Xiuli, Zheng, Jun, Xue, Chunlai, Cheng, Buwen, Li, Chuanbo. High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application. CHINESE PHYSICS B[J]. 2019, 第 6 作者28(12): 128501-128501, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ab4e84.
[47] Liu, Xiangquan, Zheng, Jun, Zhou, Lin, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 第 2 作者 通讯作者 785: 228-231, http://dx.doi.org/10.1016/j.jallcom.2019.01.163.
[48] Wu, Wenzhou, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen. Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes. TSINGHUASCIENCEANDTECHNOLOGY[J]. 2019, 第 3 作者24(1): 1-8, http://dx.doi.org/10.26599/TST.2018.9010065.
[49] Zhou, Lin, Liu, Taoran, Zheng, Jun, Yu, Kai, Yang, Fan, Wang, Nan, Zuo, Yuhua, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2018, 第 3 作者 通讯作者 122(47): 26825-26834, http://dx.doi.org/10.1021/acs.jpcc.8b07906.
[50] Zheng Jun, Liu Zhi, Xue Chunlai, Li Chuanbo, Zuo Yuhua, Cheng Buwen, Wang Qiming. Recent progress in GeSn growth and GeSn-based photonic devices. 半导体学报：英文版[J]. 2018, 第 1 作者39(6): 061006-1, http://lib.cqvip.com/Qikan/Article/Detail?id=675405241.
[51] Liu, Zhi, Liu, Jietao, Cheng, Buwen, Zheng, Jun, Li, Chuanbo, Xue, Chunlai, Wang, Qiming. Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect. JOURNAL OF APPLIED PHYSICS[J]. 2018, 第 4 作者124(5): http://dx.doi.org/10.1063/1.5031453.
[52] Zheng, Jun, Liu, Zhi, Zhang, Yongwang, Zuo, Yuhua, Li, Chuanbo, Xue, Chunlai, Cheng, Buwen, Wang, Qiming. Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy. JOURNAL OF CRYSTAL GROWTH[J]. 2018, 第 1 作者 通讯作者 492: 29-34, http://dx.doi.org/10.1016/j.jcrysgro.2018.04.008.
[53] Zhang, Junying, Zhang, Xiaoming, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors. ENERGY TECHNOLOGY[J]. 2018, 第 4 作者6(4): 737-743, https://www.webofscience.com/wos/woscc/full-record/WOS:000430104000015.
[54] Jun Zheng, Zhi Liu, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, Qiming Wang. Recent progress in GeSn growth and GeSn-based photonic devices. 半导体学报：英文版[J]. 2018, 第 1 作者39(6): 061006-1, http://lib.cqvip.com/Qikan/Article/Detail?id=675405241.
[55] Zheng, Jun, Zhang, Yongwang, Liu, Zhi, Zuo, Yuhua, Li, Chuanbo, Xue, Chunlai, Cheng, Buwen, Wang, Qiming. Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2018, 第 1 作者 通讯作者 65(11): 4971-4974, https://www.webofscience.com/wos/woscc/full-record/WOS:000448030000033.
[56] 左玉华. Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx. IEEE Transactions On Electron Devices. 2018,
[57] Zhang, Yongwang, Zheng, Jun, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2018, 第 2 作者57(10):
[58] JUN ZHENG, SUYUAN WANG, HUI CONG, COLLEEN S. FENRICH, ZHI LIU, CHUNLAI XUE, CHUANBO LI, YUHUA ZUO, BUWEN CHENG, JAMES S. HARRIS, AND QIMING WANG. Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy. LETTER[J]. 2017, 第 1 作者42(8): 1608-1611, http://ir.semi.ac.cn/handle/172111/28736.
[59] Zhou, Lin, Yu, Kai, Yang, Fan, Cong, Hui, Wang, Nan, Zheng, Jun, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Insight into the effect of ligand-exchange on colloidal CsPbBr3 perovskite quantum dot/mesoporous-TiO2 composite-based photodetectors: much faster electron injection. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2017, 第 6 作者5(25): 6224-6233, http://ir.semi.ac.cn/handle/172111/28737.
[60] Zheng, Jun, Wang, Suyuan, Cong, Hui, Fenrich, Colleen S, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Harris, James S, Wang, Qiming. Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy. OPTICS LETTERS[J]. 2017, 第 1 作者 通讯作者 42(8): 1608-1611, https://www.webofscience.com/wos/woscc/full-record/WOS:000399329600036.
[61] Wang, Suyuan, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications. SUPERLATTICES AND MICROSTRUCTURES[J]. 2017, 第 2 作者 通讯作者 111: 286-292, http://dx.doi.org/10.1016/j.spmi.2017.06.037.
[62] Buwen Cheng. Numerical calculation of strain-N+-Ge1%xSnx/P+-δGe1%xSnx/N%-Ge1%y%zSiySnz/P+-Ge1%y%zSiySnz heterojunction tunnel field-effect transistor. Japanese Journal of Applied Physics. 2017,
[63] Wenzhou Wu, Buwen Cheng, Jun Zheng, Zhi Liu, Chuanbo Li, Yuhua Zuo, Chunlai Xue. High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect. 半导体学报(英文版)[J]. 2017, 第 3 作者38(11): 55-59, http://lib.cqvip.com/Qikan/Article/Detail?id=673691417.
[64] Wu Wenzhou, Cheng Buwen, Zheng Jun, Liu Zhi, Li Chuanbo, Zuo Yuhua, Xue Chunlai. High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect. JOURNAL OF SEMICONDUCTORS[J]. 2017, 第 3 作者38(11): 114003-1, http://lib.cqvip.com/Qikan/Article/Detail?id=673691417.
[65] Zhang, Junying, Zhang, Xiaoming, Zhang, Chunqian, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen. Facile and Efficient Synthesis of a Microsized SiOx/C Core-Shell Composite as Anode Material for Lithium Ion Batteries. ENERGY & FUELS[J]. 2017, 第 5 作者31(8): 8758-8763, http://ir.semi.ac.cn/handle/172111/28733.
[66] Zhang, Junying, Zhang, Chunqian, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen. High-performance ball-milled SiOx anodes for lithium ion batteries. JOURNAL OF POWER SOURCES[J]. 2017, 第 4 作者339: 86-92, http://dx.doi.org/10.1016/j.jpowsour.2016.11.044.
[67] Zheng, Jun, Huang, Wenqi, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys. JOURNAL OF MATERIALS SCIENCE[J]. 2017, 第 1 作者 通讯作者 52(1): 431-436, https://www.webofscience.com/wos/woscc/full-record/WOS:000386785600035.
[68] Zhou, Lin, Yu, Kai, Yang, Fan, Zheng, Jun, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance. DALTON TRANSACTIONS[J]. 2017, 第 4 作者46(6): 1766-1769, http://ir.semi.ac.cn/handle/172111/28739.
[69] Wang, Suyuan, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Numerical calculation of strain-N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2017, 第 2 作者 通讯作者 56(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000399740100001.
[70] Liu, Zhi, Cong, Hui, Yang, Fan, Li, Chuanbo, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Defect-free high Sn-content GeSn on insulator grown by rapid melting growth. SCIENTIFIC REPORTS[J]. 2016, 第 5 作者6: http://dx.doi.org/10.1038/srep38386.
[71] Zheng Jun. Influence of H2 on strain evolution of high-Sn-content Ge1-xSnx alloys. Journal of Materials Science. 2016, 第 1 作者
[72] Zhou, Tianwei, Zuo, Yuhua, Qiu, Kai, Zheng, Jun, Wang, Qiming. Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering. VACUUM[J]. 2016, 第 4 作者125: 93-97, http://dx.doi.org/10.1016/j.vacuum.2015.08.024.
[73] Zheng, Jun, Wang, Suyuan, Liu, Zhi, Cong, Hui, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy. APPLIED PHYSICS LETTERS[J]. 2016, 第 1 作者 通讯作者 108(3): http://ir.semi.ac.cn/handle/172111/28061.
[74] Zhang, Junying, Zhang, Chunqian, Wu, Shouming, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen. High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode. ELECTROCHIMICA ACTA[J]. 2016, 第 4 作者208: 174-179, http://dx.doi.org/10.1016/j.electacta.2016.05.032.
[75] Zhang, Junying, Zhang, Chunqian, Wu, Shouming, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen. Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery. NANOSCALE RESEARCH LETTERS[J]. 2016, 第 5 作者11(1): http://dx.doi.org/10.1186/s11671-016-1426-5.
[76] Cong, Hui, Xue, Chunlai, Zheng, Jun, Yang, Fan, Yu, Kai, Liu, Zhi, Zhang, Xu, Cheng, Buwen, Wang, Qiming. Silicon Based GeSn p-i-n Photodetector for SWIR Detection. IEEE PHOTONICS JOURNAL[J]. 2016, 第 3 作者8(5): http://ir.semi.ac.cn/handle/172111/27813.
[77] Zhang, Dalin, Liu, Zhi, Zhang, Dongliang, Zhang, Xu, Zhang, Junying, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Oda, Shunri, Cheng, Buwen, Wang, Qiming. Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2015, 第 6 作者119(31): 17842-17847, http://ir.semi.ac.cn/handle/172111/26681.
[78] Wang, Suyuan, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Ni ohmic contacts to n-type Ge1-x-ySixSny using phosphorous implant and segregation. AIP ADVANCES[J]. 2015, 第 2 作者 通讯作者 5(12): http://ir.semi.ac.cn/handle/172111/26686.
[79] Zheng, Jun, Wang, Suyuan, Zhou, Tianwei, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering. OPTICAL MATERIALS EXPRESS[J]. 2015, 第 1 作者 通讯作者 5(2): 287-294, http://ir.semi.ac.cn/handle/172111/26685.
[80] Li, Leliang, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Efficient 1.54-mu m emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation. JOURNAL OF LUMINESCENCE[J]. 2015, 第 2 作者 通讯作者 157: 193-196, https://www.webofscience.com/wos/woscc/full-record/WOS:000345201600031.
[81] Zheng, Jun, Wang, Suyuan, Zhang, Xu, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 第 1 作者 通讯作者 36(9): 878-880, http://ir.semi.ac.cn/handle/172111/26643.
[82] ShiMing, ChenPing, ZhaoDeGang, JiangDeSheng, ZhengJun, ChengBuWen, ZhuJianJun, LiuZongShun, LiuWei, LiXiang, ZhaoDanMei, WangQiMing, LiuJianPing, ZhangShuMing, YangHui. Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage. Chinese Physics B[J]. 2015, 第 5 作者24(5): 57901-057901, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/24/5/057901.
[83] Liu, Zhi, Wen, Juanjuan, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2015, 第 3 作者4(12): P415-P418, http://dx.doi.org/10.1149/2.0041512jss.
[84] Zhou, Tianwei, Zuo, Yuhua, Qiu, Kai, Zheng, Jun, Wang, Qiming. Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications. VACUUM[J]. 2015, 第 4 作者119: 30-33, http://dx.doi.org/10.1016/j.vacuum.2015.04.024.
[85] Zhang, Xu, Zhang, Dongliang, Zheng, Jun, Liu, Zhi, He, Chao, Xue, Chunlai, Zhang, Guangze, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Formation and characterization of Ni/Al Ohmic contact on n(+)-type GeSn. SOLID-STATE ELECTRONICS[J]. 2015, 第 3 作者114: 178-181, http://dx.doi.org/10.1016/j.sse.2015.09.010.
[86] Qiu Kai, Zuo Yuhua, Zhou Tianwei, Liu Zhi, Zheng Jun, Li Chuanbo, Cheng Buwen. Enhanced light trapping in periodically truncated cone silicon nanowire structure. JOURNAL OF SEMICONDUCTORS[J]. 2015, 第 5 作者36(10): 104005-1,
[87] Zheng, Jun, Li, Leliang, Zhou, Tianwei, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Growth of Crystalline Ge1-xSnx Films on Si (100) by Magnetron Sputtering. ECS SOLID STATE LETTERS[J]. 2014, 第 1 作者 通讯作者 3(9): P111-P113, https://www.webofscience.com/wos/woscc/full-record/WOS:000340443900005.
[88] Zhou, Tianwei, Zuo, Yuhua, Li, Leliang, Qiu, Kai, Zheng, Jun, Wang, Qiming. Structural, optical and electrical properties of Ti doped amorphous silicon prepared by co-sputtering. VACUUM[J]. 2014, 第 5 作者104: 65-69, http://dx.doi.org/10.1016/j.vacuum.2014.01.004.
[89] Zhang, Dalin, Cheng, Gong, Wang, Jianquan, Zhang, Chunqian, Liu, Zhi, Zuo, Yuhua, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance. NANOSCALE RESEARCH LETTERS[J]. 2014, 第 7 作者9(1): 661-661, http://ir.semi.ac.cn/handle/172111/25991.
[90] Li, Leliang, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Structural and optical properties of (Sr,Ba)(2)SiO4:Eu2+ thin films grown by magnetron sputtering. JOURNAL OF LUMINESCENCE[J]. 2014, 第 2 作者 通讯作者 152: 234-237, http://dx.doi.org/10.1016/j.jlumin.2013.09.062.
[91] Leliang Li, Jun Zheng, Yuhua Zuo, Buwen Cheng, Qiming Wang. Strong Eu 2+ light emission in Eu silicate through Eu 3+ reduction in Eu 2 O 3. NANOSCALE RESEARCH LETTERS. 2013, 第 2 作者8(1): 194-194, http://dx.doi.org/10.1186/1556-276X-8-194.
[92] Zhang, Chunqian, Li, Chuanbo, Liu, Zhi, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Enhanced photoluminescence from porous silicon nanowire arrays. NANOSCALE RESEARCH LETTERS[J]. 2013, 第 4 作者8(1): 277-277, http://ir.semi.ac.cn/handle/172111/24668.
[93] 于丽娟, 左玉华, 郑军. 用阶梯变化金属纳米光栅增加介质中的光吸收. 太阳能[J]. 2013, 第 3 作者45-48, http://lib.cqvip.com/Qikan/Article/Detail?id=45094528.
[94] Li, Chuanbo, Zhang, Chunqian, Fobelets, Kristel, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Impact of ammonia on the electrical properties of p-type Si nanowire arrays. JOURNAL OF APPLIED PHYSICS[J]. 2013, 第 4 作者114(17): http://ir.semi.ac.cn/handle/172111/24655.
[95] Zheng, Jun, Tao, Yeliao, Wang, Wei, Ma, Zhihua, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Intense 974 nm emission from ErxYb2-xSi2O7 films through efficient energy transfer up-conversion from Er3+ to Yb3+ for Si solar cell. JOURNAL OF LUMINESCENCE[J]. 2012, 第 1 作者 通讯作者 132(9): 2341-2344, http://dx.doi.org/10.1016/j.jlumin.2012.04.015.
[96] Tao, Yeliao, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen, Wang, Qiming. Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO) Multilayer Nanostructure. NANO-MICRO LETTERS[J]. 2012, 第 2 作者4(4): 202-207, http://ir.semi.ac.cn/handle/172111/24453.
[97] Tao YeLiao, Zuo YuHua, Zheng Jun, Xue ChunLai, Cheng BuWen, Wang QiMing, Xu Jun. Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures. CHINESE PHYSICS B[J]. 2012, 第 3 作者21(7): http://ir.semi.ac.cn/handle/172111/23943.
[98] Tao, YeLiao, Zuo, YuHua, Zheng, Jun, Xue, ChunLai, Cheng, BuWen, Wang, QiMing, Xu, Jun. Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures. CHINESE PHYSICS B[J]. 2012, 第 3 作者21(7): 491-494, http://lib.cqvip.com/Qikan/Article/Detail?id=42489212.
[99] BaiAnQi, ZhengJun, TaoYeLiao, ZuoYuHua, XueChunLai, ChengBuWen, WangQiMing. Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature. Chinese Physics B[J]. 2011, 第 2 作者20(11): 116103-116103, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/20/11/116103.
[100] Wang Wei, Su ShaoJian, Zheng Jun, Zhang GuangZe, Zuo YuHua, Cheng BuWen, Wang QiMing. Strained and strain-relaxed epitaxial Ge_(l-x)Sn_x alloys on Si(100)substrates. CHINESE PHYSICS. B[J]. 2011, 第 3 作者20(6): 068103-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4223322&detailType=1.
[101] Wang, Wei, Su, Shaojian, Zheng, Jun, Zhang, Guangze, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing. APPLIED SURFACE SCIENCE[J]. 2011, 第 3 作者257(9): 4468-4471, http://dx.doi.org/10.1016/j.apsusc.2010.12.094.
[102] WangWei, SuShaoJian, ZhengJun, ZhangGuangZe, ZuoYuHua, ChengBuWen, WangQiMing. Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates. Chinese Physics B[J]. 2011, 第 3 作者20(6): 68103-068103, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/20/6/068103.
[103] 白安琪, 郑军, 陶冶了, 左玉华, 薛春来, 成步文, 王启明. Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature. 中国物理：英文版[J]. 2011, 第 2 作者20(11): 391-396, http://lib.cqvip.com/Qikan/Article/Detail?id=39943594.
[104] MaZhiHua, CaoQuan, ZuoYuHua, ZhengJun, XueChunLai, ChengBuWen, WangQiMing. Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material. Chinese Physics B[J]. 2011, 第 4 作者20(10): 106104-106104, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/20/10/106104.
[105] Zheng, Jun, Tao, Yeliao, Wang, Wei, Zhang, Lingzi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen, Wang, Qiming. Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate. MATERIALS LETTERS[J]. 2011, 第 1 作者 通讯作者 65(5): 860-862, http://ir.semi.ac.cn/handle/172111/20985.
[2] Huang, Qinxing, Zheng, Jun, Zhu, Yupeng, Liu, Xiangquan, Liu, Zhipeng, Yang, Yazhou, Cui, Jinlai, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Lateral GeSn p-i-n photodetectors on insulator prepared by the rapid melting growth method. OPTICS LETTERS[J]. 2024, 第 2 作者 通讯作者 49(5): 1365-1368, http://dx.doi.org/10.1364/OL.516928.
[3] Peipei Ma, Jun Zheng, Xiangquan Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng. Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector. JOURNAL OF SEMICONDUCTORS[J]. 2024, 第 2 作者 通讯作者 45(2): 51-56, http://lib.cqvip.com/Qikan/Article/Detail?id=7111394521.
[4] Jinlai Cui, Rui Fang, Xiangquan Liu, Yiyang Wu, Qinxing Huang, Zhipeng Liu, Fei Yi, Zhi Liu, 左玉华, Buwen Cheng, Jun Zheng. Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application. Acs Photonics[J]. 2024, 第 11 作者 通讯作者 11(null): 4126-4133,
[5] Xiangquan Liu, Jun Zheng, Qinxing Huang, Jinlai Cui, Yupeng Zhu, Yazhou Yang, Zhi Liu, Yuhua Zuo, Buwen Cheng. Investigation of temperature and H2 on GePb/Ge multiple quantum well growth. Journal of Physics D: Applied Physics[J]. 2024, 第 2 作者 通讯作者 57(null): 245108,
[6] Yazhou Yang, Yuankai Song, Jiayi Li, Zhenglan Ye, Dan Chen, Qinxing Huang, Yupeng Zhu, Congwei Shi, Xiangquan Liu, Guangze Zhang, Tao Men, Yuhua Zuo, Jun Zheng, Lei Zhao, Chunlan Zhou, Zhi Liu, Buwen Cheng. Spatial Electrode Modulation Strategy for the Perovskite Single Crystal Photodetector. Acs Photonics[J]. 2024, 第 13 作者 通讯作者 11(9): 3811-3821,
[7] Chen, Dan, Liu, Taoran, Zuo, Yuhua, Li, Chuanbo, Zheng, Jun, Liu, Zhi, Liu, Baoyu, Cheng, Buwen. Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers. TSINGHUA SCIENCE AND TECHNOLOGY[J]. 2023, 第 5 作者28(1): 131-140,
[8] Jinlai Cui, Jun Zheng, Yupeng Zhu, Xiangquan Liu, Qingxing Huang, Zhi Liu, Yuhua Zuo, Buwen Cheng. Sn component gradient GeSn photodetector with 3 dB bandwidth over 50 GHz for extending L band telecommunication. Optics Letters[J]. 2023, 第 2 作者 通讯作者 48(23): 6148-6151,
[9] Huang, Qinxing, Liu, Xiangquan, Zheng, Jun, Yang, YaZhou, Zhang, Diandian, Pang, Yaqing, Cui, Jinlai, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Photoluminescence characterization of GeSn prepared by rapid melting growth method. JOURNAL OF LUMINESCENCE[J]. 2023, 第 3 作者 通讯作者 255: http://dx.doi.org/10.1016/j.jlumin.2022.119623.
[10] Xueyi Zheng, Jun Zheng, Chen He, Xiangquan Liu, Yuhua Zuo, Buwen Cheng, Chuanbo Li. Metalorganic vapor-phase epitaxy of β-(AlxGa1-x)2O3 on (2 0 1) Ga2O3 substrates. Journal of Crystal Growth[J]. 2023, 第 2 作者 通讯作者 603: 127014,
[11] Yazhou Yang, Xiangquan Liu, Taoran Liu, Dan Chen, 叶正澜, Jiayi Li, 黄秦兴, Yupeng Zhu, Yaqing Pang, Diandian Zhang, Zhi Liu, Buwen Cheng, Jun Zheng, 左玉华. High Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR.. Advanced Optical Materials[J]. 2023, 第 13 作者 通讯作者 2300708,
[12] Xiangquan Liu, Jun Zheng, Qinxing Huang, Yaqing Pang, Diandian Zhang, Yupeng Zhu, Zhi Liu, Yuhua Zuo, Buwen Cheng. Growth and characterization of GePb/Ge multiple quantum wells. Journal of Alloys and Compounds[J]. 2023, 第 2 作者 通讯作者 934: 167954,
[13] 陈丹, 叶正澜, 杨亚洲, 刘陶然, 李嘉仪, 刘香全, 左玉华, 郑军, 刘智, 成步文. Impact of Strontium Doping on Quasi-Two-Dimensional Perovskite Layers for Sky-Blue Light-Emitting Diodes. ACS Applied Optical Materials[J]. 2023, 第 8 作者1(8): 1405-1413, 10.1021/acsaom.3c00182.
[14] Lin, Guochen, Zhao, Yue, Yu, Kai, Veeramalai, Chandrasekar Perumal, Ma, Runze, Zheng, Jun, Cheng, Buwen, Zhang, Xiaoming, Li, Chuanbo. Dramatic increase in SWIR detection for GeSn strip detector with graphene hybrid structure. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2023, 第 6 作者945: http://dx.doi.org/10.1016/j.jallcom.2023.169287.
[15] Ma, Peipei, Zheng, Jun, Zhang, Yabao, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Investigation on n-Type (-201) beta-Ga2O3 Ohmic Contact via Si Ion Implantation. TSINGHUA SCIENCE AND TECHNOLOGY[J]. 2023, 第 2 作者 通讯作者 28(1): 150-154,
[16] 刘香全, 刘陶然, 陈丹, 杨亚洲, 叶正澜, 左玉华, 郑军, 刘智, 成步文. Broad-Spectrum Germanium Photodetector Based on the Ytterbium-Doped Perovskite Nanocrystal Downshifting Effect. ACS Appl. Opt. Mater.[J]. 2023, 第 7 作者1(1): 507-512, 10.1021/acsaom.2c00139.
[17] Li, Mingming, Zheng, Jun, Liu, Xiangquan, Zhu, Yupeng, Niu, Chaoqun, Pang, Yaqing, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 um for mid-infrared Si photonics. APPLIED PHYSICS LETTERS[J]. 2022, 第 2 作者 通讯作者 120(12): http://dx.doi.org/10.1063/5.0084940.
[18] Liu, Xiangquan, Zheng, Jun, Niu, Chaoqun, Liu, Taoran, Huang, Qinxing, Li, Mingming, Zhang, Diandian, Pang, Yaqing, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen. Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors. PHOTONICS RESEARCH[J]. 2022, 第 2 作者 通讯作者 10(7): 1567-1574,
[19] Mingming Li, Jun Zheng, Xiangquan Liu, Chaoqun Niu, Yupeng Zhu, Yaqing Pang, Zhi Liu, Yazhou Yang, Yuhua zuo, Buwen Cheng. GeSn resonance cavity enhanced photodetector with gold bottom reflector for the L band optical communication. Optics Letters[J]. 2022, 第 2 作者 通讯作者 47(17): 4315,
[20] Abolfazl Amraeinia, Yuhua Zuo, Jun Zheng, Zhilu, zhang guangze, luo liping, buwen cheng, Xiaoping Zou, Chuanbo Li. Interface modification of TiO2 electron transport layer with PbCl2 for perovskiote solar cells with carbon electrode. Tsinghua Science & Technology[J]. 2022, 第 3 作者
[21] Yupeng Zhu, Chaoqun Niu, Liu Zhi, Xiangquan Liu, Yazhou Yang, Qinxing Huang, Jinlai Cui, Jun Zheng, Yuhua Zuo, Buwen Cheng. Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform. Optics Express[J]. 2022, 第 8 作者30(23): 41943-41953,
[22] Li, Xiuli, Peng, Linzhi, Liu, Zhi, Zhou, Zhiqi, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Chen, Baile, Cheng, Buwen. 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application. PHOTONICS RESEARCH[J]. 2021, 第 5 作者9(4): 494-500, https://www.webofscience.com/wos/woscc/full-record/WOS:000636997400020.
[23] Liu, Baoyu, Zou, Xiaoping, Chen, Dan, Liu, Taoran, Zuo, Yuhua, Zheng, Jun, Liu, Zhi, Cheng, Buwen. Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite. TSINGHUA SCIENCE AND TECHNOLOGY[J]. 2021, 第 6 作者26(4): 496-504, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7098080&detailType=1.
[24] Rehman, Sajid Ur, Butt, Faheem K, Tariq, Zeeshan, Zhang, Xiaoming, Zheng, Jun, Naydenov, Genadi, Ul Haq, Bakhtiar, Li, Chuanbo. Elucidating the role of lattice thermal conductivity in pi-phases of IV-VI monochalcogenides for highly efficient thermoelectric performance. INTERNATIONAL JOURNAL OF ENERGY RESEARCH[J]. 2021, 第 5 作者45(4): 6369-6382, http://dx.doi.org/10.1002/er.6174.
[25] 马润泽, 张晓明, 冯帅, 郑军, 徐应强, 李传波. 红外光电探测技术研究现状及展望（特邀）. 光子学报[J]. 2021, 第 4 作者50(10): 253-268, https://doi.org/10.3788/gzxb20215010.1004006.
[26] Liu, Xiangquan, Zheng, Jun, Li, Mingming, Wan, Fengshuo, Niu, Chaoqun, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2021, 第 2 作者 通讯作者 54(43): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000682143300001.
[27] Tariq, Zeeshan, Rehman, Sajid Ur, Zhang, Xiaoming, Butt, Faheem K, Feng, Shuai, Ul Haq, Bakhtiar, Zheng, Jun, Cheng, Buwen, Li, Chuanbo. Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion. JOURNAL OF MATERIALS SCIENCE[J]. 2021, 第 7 作者56(21): 12270-12284, http://dx.doi.org/10.1007/s10853-021-06069-9.
[28] Liu, Xiangquan, Zheng, Jun, Zhao, Yue, Li, Mingming, Peng, Linzhi, Wan, Fengshuo, Niu, Chaoqun, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. Germanium lead alloy on insulator grown by rapid melting growth. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 第 2 作者 通讯作者 864: http://dx.doi.org/10.1016/j.jallcom.2021.158798.
[29] 郑军, 刘香全, 李明明, 刘智, 左玉华, 薛春来, 成步文. 新型硅基IV族合金材料生长及光电器件研究进展（特邀）. 光子学报[J]. 2021, 第 1 作者50(10): 217-226, https://doi.org/10.3788/gzxb20215010.1004002.
[30] Ma, Peipei, Zhang, Junying, Zheng, Jun, Cheng, Buwen, Zhang, Xiaoming, Li, Chuanbo. Double-shell-structured Si@SiOx@C composite material for long-life lithium-ion storage. IONICS[J]. 2020, 第 3 作者26(7): 3275-3280, https://www.webofscience.com/wos/woscc/full-record/WOS:000545159700009.
[31] Liu, Xiangquan, Zheng, Jun, Li, Mingming, Peng, Linzhi, Wang, Nan, Li, Xiuli, Zuo, Yuhua, Liu, Zhi, Xue, Chunlai, Cheng, Buwen. Epitaxial growth and characterization of Ge(1-x-y)Sn(x)Pb(y )ternary alloys. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2020, 第 2 作者 通讯作者 829: http://dx.doi.org/10.1016/j.jallcom.2020.154505.
[32] Wang, Suyuan, Wu, Qiang, Zheng, Jun, Zhang, Bin, Huang, Song, Jia, Zixi, Yao, Jianghong, Zhou, Qingjun, Yang, Li, Xu, Jingjun, Cheng, Buwen. Well-aligned periodic germanium nanoisland arrays with large areas and improved field emission performance induced by femtosecond laser. APPLIED SURFACE SCIENCE[J]. 2020, 第 3 作者 通讯作者 508: http://dx.doi.org/10.1016/j.apsusc.2020.145308.
[33] Xiangquan Liu, Jun Zheng, Xiuli Li, Chaoqun Niu, Linzhi Peng, Fengshuo Wan, Zhi Liu, Yuhua Zuo, Chunlai Xue, Buwen Cheng. Investigation of lead surface segregation during germanium–lead epitaxial growth. JOURNAL OF MATERIALS SCIENCE[J]. 2020, 第 2 作者 通讯作者 55(11): 4762-4768, https://www.webofscience.com/wos/woscc/full-record/WOS:000511972700017.
[34] Peng, Linzhi, Li, Xiuli, Zheng, Jun, Liu, Xiangquan, Li, Mingming, Liu, Zhi, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen. Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs. JOURNAL OF LUMINESCENCE[J]. 2020, 第 3 作者228: http://dx.doi.org/10.1016/j.jlumin.2020.117539.
[35] Wang, Suyuan, Wu, Qiang, Zheng, Jun, Zhang, Bin, Yao, Jianghong, Zhou, Qingjun, Yang, Li, Xu, Jingjun, Cheng, Buwen. GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 第 3 作者 通讯作者 59(3): http://dx.doi.org/10.35848/1347-4065/ab705f.
[36] Wang, Nan, Xue, Chunlai, Wan, Fengshuo, Zhao, Yue, Xu, Guoyin, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn. SCIENTIFIC REPORTS[J]. 2020, 第 7 作者10(1): http://dx.doi.org/10.1038/s41598-020-63152-y.
[37] Li, Xiuli, Peng, Linzhi, Liu, Zhi, Liu, Xiangquan, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. High-power back-to-back dual-absorption germanium photodetector. OPTICS LETTERS[J]. 2020, 第 5 作者45(6): 1358-1361, http://dx.doi.org/10.1364/OL.388011.
[38] Peng, Linzhi, Li, Xiuli, Liu, Zhi, Liu, Xiangquan, Zheng, Jun, Xu, Chunlai, Zuo, Yuhua, Cheng, Buwen. Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates. PHOTONICS RESEARCH[J]. 2020, 第 5 作者8(6): 899-903, http://lib.cqvip.com/Qikan/Article/Detail?id=7102332515.
[39] Chen, Dan, Liu, Taoran, Zuo, Yuhua, Zou, Xiaoping, Zheng, Jun, Cheng, Buwen. Enhanced effect of 1,2-dichlorobenzene on the property of PC61BM and perovskite films for planar heterojunction perovskite solar cells. ORGANIC ELECTRONICS[J]. 2020, 第 5 作者77: http://dx.doi.org/10.1016/j.orgel.2019.105543.
[40] Liu, Zhi, Li, Xiuli, Niu, Chaoqun, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen. 56 Gbps high-speed Ge electro-absorption modulator. PHOTONICS RESEARCH[J]. 2020, 第 4 作者8(10): 1648-1652, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6913739&detailType=1.
[41] Niu, Chaoqun, Liu, Zhi, Li, Xiuli, Liu, Xiangquan, Wan, Fengshuo, Zheng, Jun, Cheng, Buwen, Xue, Chunlai, Zuo, Yuhua. High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2020, 第 6 作者32(18): 1183-1186, http://dx.doi.org/10.1109/LPT.2020.3016028.
[42] Li, XiuLi, Liu, Zhi, Peng, LinZhi, Liu, XiangQuan, Wang, Nan, Zhao, Yue, Zheng, Jun, Zuo, YuHua, Xue, ChunLai, Cheng, BuWen. High-Performance Germanium Waveguide Photodetectors on Silicon. CHINESE PHYSICS LETTERS[J]. 2020, 第 7 作者37(3): 38503-85, https://cpl.iphy.ac.cn/10.1088/0256-307X/37/3/038503.
[43] Peng, Linzhi, Li, Xiuli, Zheng, Jun, Liu, Xiangquan, Li, Mingming, Liu, Zhi, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen. Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs. JOURNAL OF LUMINESCENCE[J]. 2020, 第 3 作者228: http://dx.doi.org/10.1016/j.jlumin.2020.117539.
[44] Liu, Xiangquan, Zheng, Jun, Li, Xiuli, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. Study of GePb photodetectors for shortwave infrared detection. OPTICS EXPRESS[J]. 2019, 第 2 作者 通讯作者 27(13): 18038-18043, http://dx.doi.org/10.1364/OE.27.018038.
[45] Zhang, Junying, Ma, Peipei, Zhang, Xiaoming, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen, Li, Chuanbo. Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes. ENERGY TECHNOLOGY[J]. 2019, 第 5 作者7(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000466486200014.
[46] Zhao, Yue, Wang, Nan, Yu, Kai, Zhang, Xiaoming, Li, Xiuli, Zheng, Jun, Xue, Chunlai, Cheng, Buwen, Li, Chuanbo. High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application. CHINESE PHYSICS B[J]. 2019, 第 6 作者28(12): 128501-128501, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ab4e84.
[47] Liu, Xiangquan, Zheng, Jun, Zhou, Lin, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen. Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 第 2 作者 通讯作者 785: 228-231, http://dx.doi.org/10.1016/j.jallcom.2019.01.163.
[48] Wu, Wenzhou, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen. Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes. TSINGHUASCIENCEANDTECHNOLOGY[J]. 2019, 第 3 作者24(1): 1-8, http://dx.doi.org/10.26599/TST.2018.9010065.
[49] Zhou, Lin, Liu, Taoran, Zheng, Jun, Yu, Kai, Yang, Fan, Wang, Nan, Zuo, Yuhua, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2018, 第 3 作者 通讯作者 122(47): 26825-26834, http://dx.doi.org/10.1021/acs.jpcc.8b07906.
[50] Zheng Jun, Liu Zhi, Xue Chunlai, Li Chuanbo, Zuo Yuhua, Cheng Buwen, Wang Qiming. Recent progress in GeSn growth and GeSn-based photonic devices. 半导体学报：英文版[J]. 2018, 第 1 作者39(6): 061006-1, http://lib.cqvip.com/Qikan/Article/Detail?id=675405241.
[51] Liu, Zhi, Liu, Jietao, Cheng, Buwen, Zheng, Jun, Li, Chuanbo, Xue, Chunlai, Wang, Qiming. Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect. JOURNAL OF APPLIED PHYSICS[J]. 2018, 第 4 作者124(5): http://dx.doi.org/10.1063/1.5031453.
[52] Zheng, Jun, Liu, Zhi, Zhang, Yongwang, Zuo, Yuhua, Li, Chuanbo, Xue, Chunlai, Cheng, Buwen, Wang, Qiming. Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy. JOURNAL OF CRYSTAL GROWTH[J]. 2018, 第 1 作者 通讯作者 492: 29-34, http://dx.doi.org/10.1016/j.jcrysgro.2018.04.008.
[53] Zhang, Junying, Zhang, Xiaoming, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors. ENERGY TECHNOLOGY[J]. 2018, 第 4 作者6(4): 737-743, https://www.webofscience.com/wos/woscc/full-record/WOS:000430104000015.
[54] Jun Zheng, Zhi Liu, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, Qiming Wang. Recent progress in GeSn growth and GeSn-based photonic devices. 半导体学报：英文版[J]. 2018, 第 1 作者39(6): 061006-1, http://lib.cqvip.com/Qikan/Article/Detail?id=675405241.
[55] Zheng, Jun, Zhang, Yongwang, Liu, Zhi, Zuo, Yuhua, Li, Chuanbo, Xue, Chunlai, Cheng, Buwen, Wang, Qiming. Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2018, 第 1 作者 通讯作者 65(11): 4971-4974, https://www.webofscience.com/wos/woscc/full-record/WOS:000448030000033.
[56] 左玉华. Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx. IEEE Transactions On Electron Devices. 2018,
[57] Zhang, Yongwang, Zheng, Jun, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2018, 第 2 作者57(10):
[58] JUN ZHENG, SUYUAN WANG, HUI CONG, COLLEEN S. FENRICH, ZHI LIU, CHUNLAI XUE, CHUANBO LI, YUHUA ZUO, BUWEN CHENG, JAMES S. HARRIS, AND QIMING WANG. Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy. LETTER[J]. 2017, 第 1 作者42(8): 1608-1611, http://ir.semi.ac.cn/handle/172111/28736.
[59] Zhou, Lin, Yu, Kai, Yang, Fan, Cong, Hui, Wang, Nan, Zheng, Jun, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Insight into the effect of ligand-exchange on colloidal CsPbBr3 perovskite quantum dot/mesoporous-TiO2 composite-based photodetectors: much faster electron injection. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2017, 第 6 作者5(25): 6224-6233, http://ir.semi.ac.cn/handle/172111/28737.
[60] Zheng, Jun, Wang, Suyuan, Cong, Hui, Fenrich, Colleen S, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Harris, James S, Wang, Qiming. Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy. OPTICS LETTERS[J]. 2017, 第 1 作者 通讯作者 42(8): 1608-1611, https://www.webofscience.com/wos/woscc/full-record/WOS:000399329600036.
[61] Wang, Suyuan, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications. SUPERLATTICES AND MICROSTRUCTURES[J]. 2017, 第 2 作者 通讯作者 111: 286-292, http://dx.doi.org/10.1016/j.spmi.2017.06.037.
[62] Buwen Cheng. Numerical calculation of strain-N+-Ge1%xSnx/P+-δGe1%xSnx/N%-Ge1%y%zSiySnz/P+-Ge1%y%zSiySnz heterojunction tunnel field-effect transistor. Japanese Journal of Applied Physics. 2017,
[63] Wenzhou Wu, Buwen Cheng, Jun Zheng, Zhi Liu, Chuanbo Li, Yuhua Zuo, Chunlai Xue. High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect. 半导体学报(英文版)[J]. 2017, 第 3 作者38(11): 55-59, http://lib.cqvip.com/Qikan/Article/Detail?id=673691417.
[64] Wu Wenzhou, Cheng Buwen, Zheng Jun, Liu Zhi, Li Chuanbo, Zuo Yuhua, Xue Chunlai. High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect. JOURNAL OF SEMICONDUCTORS[J]. 2017, 第 3 作者38(11): 114003-1, http://lib.cqvip.com/Qikan/Article/Detail?id=673691417.
[65] Zhang, Junying, Zhang, Xiaoming, Zhang, Chunqian, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen. Facile and Efficient Synthesis of a Microsized SiOx/C Core-Shell Composite as Anode Material for Lithium Ion Batteries. ENERGY & FUELS[J]. 2017, 第 5 作者31(8): 8758-8763, http://ir.semi.ac.cn/handle/172111/28733.
[66] Zhang, Junying, Zhang, Chunqian, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen. High-performance ball-milled SiOx anodes for lithium ion batteries. JOURNAL OF POWER SOURCES[J]. 2017, 第 4 作者339: 86-92, http://dx.doi.org/10.1016/j.jpowsour.2016.11.044.
[67] Zheng, Jun, Huang, Wenqi, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys. JOURNAL OF MATERIALS SCIENCE[J]. 2017, 第 1 作者 通讯作者 52(1): 431-436, https://www.webofscience.com/wos/woscc/full-record/WOS:000386785600035.
[68] Zhou, Lin, Yu, Kai, Yang, Fan, Zheng, Jun, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance. DALTON TRANSACTIONS[J]. 2017, 第 4 作者46(6): 1766-1769, http://ir.semi.ac.cn/handle/172111/28739.
[69] Wang, Suyuan, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Numerical calculation of strain-N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2017, 第 2 作者 通讯作者 56(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000399740100001.
[70] Liu, Zhi, Cong, Hui, Yang, Fan, Li, Chuanbo, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Defect-free high Sn-content GeSn on insulator grown by rapid melting growth. SCIENTIFIC REPORTS[J]. 2016, 第 5 作者6: http://dx.doi.org/10.1038/srep38386.
[71] Zheng Jun. Influence of H2 on strain evolution of high-Sn-content Ge1-xSnx alloys. Journal of Materials Science. 2016, 第 1 作者
[72] Zhou, Tianwei, Zuo, Yuhua, Qiu, Kai, Zheng, Jun, Wang, Qiming. Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering. VACUUM[J]. 2016, 第 4 作者125: 93-97, http://dx.doi.org/10.1016/j.vacuum.2015.08.024.
[73] Zheng, Jun, Wang, Suyuan, Liu, Zhi, Cong, Hui, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy. APPLIED PHYSICS LETTERS[J]. 2016, 第 1 作者 通讯作者 108(3): http://ir.semi.ac.cn/handle/172111/28061.
[74] Zhang, Junying, Zhang, Chunqian, Wu, Shouming, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen. High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode. ELECTROCHIMICA ACTA[J]. 2016, 第 4 作者208: 174-179, http://dx.doi.org/10.1016/j.electacta.2016.05.032.
[75] Zhang, Junying, Zhang, Chunqian, Wu, Shouming, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen. Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery. NANOSCALE RESEARCH LETTERS[J]. 2016, 第 5 作者11(1): http://dx.doi.org/10.1186/s11671-016-1426-5.
[76] Cong, Hui, Xue, Chunlai, Zheng, Jun, Yang, Fan, Yu, Kai, Liu, Zhi, Zhang, Xu, Cheng, Buwen, Wang, Qiming. Silicon Based GeSn p-i-n Photodetector for SWIR Detection. IEEE PHOTONICS JOURNAL[J]. 2016, 第 3 作者8(5): http://ir.semi.ac.cn/handle/172111/27813.
[77] Zhang, Dalin, Liu, Zhi, Zhang, Dongliang, Zhang, Xu, Zhang, Junying, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Li, Chuanbo, Oda, Shunri, Cheng, Buwen, Wang, Qiming. Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2015, 第 6 作者119(31): 17842-17847, http://ir.semi.ac.cn/handle/172111/26681.
[78] Wang, Suyuan, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Ni ohmic contacts to n-type Ge1-x-ySixSny using phosphorous implant and segregation. AIP ADVANCES[J]. 2015, 第 2 作者 通讯作者 5(12): http://ir.semi.ac.cn/handle/172111/26686.
[79] Zheng, Jun, Wang, Suyuan, Zhou, Tianwei, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering. OPTICAL MATERIALS EXPRESS[J]. 2015, 第 1 作者 通讯作者 5(2): 287-294, http://ir.semi.ac.cn/handle/172111/26685.
[80] Li, Leliang, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Efficient 1.54-mu m emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation. JOURNAL OF LUMINESCENCE[J]. 2015, 第 2 作者 通讯作者 157: 193-196, https://www.webofscience.com/wos/woscc/full-record/WOS:000345201600031.
[81] Zheng, Jun, Wang, Suyuan, Zhang, Xu, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 第 1 作者 通讯作者 36(9): 878-880, http://ir.semi.ac.cn/handle/172111/26643.
[82] ShiMing, ChenPing, ZhaoDeGang, JiangDeSheng, ZhengJun, ChengBuWen, ZhuJianJun, LiuZongShun, LiuWei, LiXiang, ZhaoDanMei, WangQiMing, LiuJianPing, ZhangShuMing, YangHui. Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage. Chinese Physics B[J]. 2015, 第 5 作者24(5): 57901-057901, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/24/5/057901.
[83] Liu, Zhi, Wen, Juanjuan, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2015, 第 3 作者4(12): P415-P418, http://dx.doi.org/10.1149/2.0041512jss.
[84] Zhou, Tianwei, Zuo, Yuhua, Qiu, Kai, Zheng, Jun, Wang, Qiming. Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications. VACUUM[J]. 2015, 第 4 作者119: 30-33, http://dx.doi.org/10.1016/j.vacuum.2015.04.024.
[85] Zhang, Xu, Zhang, Dongliang, Zheng, Jun, Liu, Zhi, He, Chao, Xue, Chunlai, Zhang, Guangze, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Formation and characterization of Ni/Al Ohmic contact on n(+)-type GeSn. SOLID-STATE ELECTRONICS[J]. 2015, 第 3 作者114: 178-181, http://dx.doi.org/10.1016/j.sse.2015.09.010.
[86] Qiu Kai, Zuo Yuhua, Zhou Tianwei, Liu Zhi, Zheng Jun, Li Chuanbo, Cheng Buwen. Enhanced light trapping in periodically truncated cone silicon nanowire structure. JOURNAL OF SEMICONDUCTORS[J]. 2015, 第 5 作者36(10): 104005-1,
[87] Zheng, Jun, Li, Leliang, Zhou, Tianwei, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Growth of Crystalline Ge1-xSnx Films on Si (100) by Magnetron Sputtering. ECS SOLID STATE LETTERS[J]. 2014, 第 1 作者 通讯作者 3(9): P111-P113, https://www.webofscience.com/wos/woscc/full-record/WOS:000340443900005.
[88] Zhou, Tianwei, Zuo, Yuhua, Li, Leliang, Qiu, Kai, Zheng, Jun, Wang, Qiming. Structural, optical and electrical properties of Ti doped amorphous silicon prepared by co-sputtering. VACUUM[J]. 2014, 第 5 作者104: 65-69, http://dx.doi.org/10.1016/j.vacuum.2014.01.004.
[89] Zhang, Dalin, Cheng, Gong, Wang, Jianquan, Zhang, Chunqian, Liu, Zhi, Zuo, Yuhua, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance. NANOSCALE RESEARCH LETTERS[J]. 2014, 第 7 作者9(1): 661-661, http://ir.semi.ac.cn/handle/172111/25991.
[90] Li, Leliang, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Structural and optical properties of (Sr,Ba)(2)SiO4:Eu2+ thin films grown by magnetron sputtering. JOURNAL OF LUMINESCENCE[J]. 2014, 第 2 作者 通讯作者 152: 234-237, http://dx.doi.org/10.1016/j.jlumin.2013.09.062.
[91] Leliang Li, Jun Zheng, Yuhua Zuo, Buwen Cheng, Qiming Wang. Strong Eu 2+ light emission in Eu silicate through Eu 3+ reduction in Eu 2 O 3. NANOSCALE RESEARCH LETTERS. 2013, 第 2 作者8(1): 194-194, http://dx.doi.org/10.1186/1556-276X-8-194.
[92] Zhang, Chunqian, Li, Chuanbo, Liu, Zhi, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Enhanced photoluminescence from porous silicon nanowire arrays. NANOSCALE RESEARCH LETTERS[J]. 2013, 第 4 作者8(1): 277-277, http://ir.semi.ac.cn/handle/172111/24668.
[93] 于丽娟, 左玉华, 郑军. 用阶梯变化金属纳米光栅增加介质中的光吸收. 太阳能[J]. 2013, 第 3 作者45-48, http://lib.cqvip.com/Qikan/Article/Detail?id=45094528.
[94] Li, Chuanbo, Zhang, Chunqian, Fobelets, Kristel, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Impact of ammonia on the electrical properties of p-type Si nanowire arrays. JOURNAL OF APPLIED PHYSICS[J]. 2013, 第 4 作者114(17): http://ir.semi.ac.cn/handle/172111/24655.
[95] Zheng, Jun, Tao, Yeliao, Wang, Wei, Ma, Zhihua, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Intense 974 nm emission from ErxYb2-xSi2O7 films through efficient energy transfer up-conversion from Er3+ to Yb3+ for Si solar cell. JOURNAL OF LUMINESCENCE[J]. 2012, 第 1 作者 通讯作者 132(9): 2341-2344, http://dx.doi.org/10.1016/j.jlumin.2012.04.015.
[96] Tao, Yeliao, Zheng, Jun, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen, Wang, Qiming. Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO) Multilayer Nanostructure. NANO-MICRO LETTERS[J]. 2012, 第 2 作者4(4): 202-207, http://ir.semi.ac.cn/handle/172111/24453.
[97] Tao YeLiao, Zuo YuHua, Zheng Jun, Xue ChunLai, Cheng BuWen, Wang QiMing, Xu Jun. Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures. CHINESE PHYSICS B[J]. 2012, 第 3 作者21(7): http://ir.semi.ac.cn/handle/172111/23943.
[98] Tao, YeLiao, Zuo, YuHua, Zheng, Jun, Xue, ChunLai, Cheng, BuWen, Wang, QiMing, Xu, Jun. Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures. CHINESE PHYSICS B[J]. 2012, 第 3 作者21(7): 491-494, http://lib.cqvip.com/Qikan/Article/Detail?id=42489212.
[99] BaiAnQi, ZhengJun, TaoYeLiao, ZuoYuHua, XueChunLai, ChengBuWen, WangQiMing. Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature. Chinese Physics B[J]. 2011, 第 2 作者20(11): 116103-116103, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/20/11/116103.
[100] Wang Wei, Su ShaoJian, Zheng Jun, Zhang GuangZe, Zuo YuHua, Cheng BuWen, Wang QiMing. Strained and strain-relaxed epitaxial Ge_(l-x)Sn_x alloys on Si(100)substrates. CHINESE PHYSICS. B[J]. 2011, 第 3 作者20(6): 068103-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4223322&detailType=1.
[101] Wang, Wei, Su, Shaojian, Zheng, Jun, Zhang, Guangze, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing. APPLIED SURFACE SCIENCE[J]. 2011, 第 3 作者257(9): 4468-4471, http://dx.doi.org/10.1016/j.apsusc.2010.12.094.
[102] WangWei, SuShaoJian, ZhengJun, ZhangGuangZe, ZuoYuHua, ChengBuWen, WangQiMing. Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates. Chinese Physics B[J]. 2011, 第 3 作者20(6): 68103-068103, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/20/6/068103.
[103] 白安琪, 郑军, 陶冶了, 左玉华, 薛春来, 成步文, 王启明. Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature. 中国物理：英文版[J]. 2011, 第 2 作者20(11): 391-396, http://lib.cqvip.com/Qikan/Article/Detail?id=39943594.
[104] MaZhiHua, CaoQuan, ZuoYuHua, ZhengJun, XueChunLai, ChengBuWen, WangQiMing. Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material. Chinese Physics B[J]. 2011, 第 4 作者20(10): 106104-106104, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/20/10/106104.
[105] Zheng, Jun, Tao, Yeliao, Wang, Wei, Zhang, Lingzi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen, Wang, Qiming. Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate. MATERIALS LETTERS[J]. 2011, 第 1 作者 通讯作者 65(5): 860-862, http://ir.semi.ac.cn/handle/172111/20985.
科研活动
科研项目
（ 1 ） 锗铅合金材料外延生长及能带结构的基础研究, 负责人, 国家任务, 2022-07--2024-12
（ 2 ） 锗铅合金材料外延生长及能带结构的基础研究, 负责人, 国家任务, 2021-01--2021-12
（ 3 ） 锗硅雪崩光电探测器阵列及相干成像激光雷达系统的研制, 负责人, 国家任务, 2021-01--2025-12
（ 4 ） 高锡组分锗锡合金外延生长及中红外光电探测器研究, 负责人, 国家任务, 2019-08--2023-06
（ 5 ） 16通道100Gbps高响应低暗电流硅基微纳锗硅探测器阵列研究, 参与, 国家任务, 2017-07--2022-06
（ 2 ） 锗铅合金材料外延生长及能带结构的基础研究, 负责人, 国家任务, 2021-01--2021-12
（ 3 ） 锗硅雪崩光电探测器阵列及相干成像激光雷达系统的研制, 负责人, 国家任务, 2021-01--2025-12
（ 4 ） 高锡组分锗锡合金外延生长及中红外光电探测器研究, 负责人, 国家任务, 2019-08--2023-06
（ 5 ） 16通道100Gbps高响应低暗电流硅基微纳锗硅探测器阵列研究, 参与, 国家任务, 2017-07--2022-06
参与会议
（1）锗锡外延生长及光电子器件研究 第十五届全国分子束外延学术会议 2023-10-10
（2）硅基锗锡光电子器件研究进展 第十三届全国光学青年学术论坛 2023-08-12
（3）高锡组分锗锡外延生长与红外光电子器件 第二十四届全国半导体物理学术会议 2023-07-13
（4）Ge1-xSnx及Ge1-xPbx合金的溅射外延生长研究 第十三届全国分子束外延学术会议 2019-08-14
（5）Ge1-xPbx合金的外延生长及光电探测器研究 第十三届全国硅基光电子材料及器件研讨会 2019-06-13
（6）Ge1-xSnx和Ge1-x-ySixSny单晶薄膜的溅射外延制备研究 中国材料大会 2018-07-12
（2）硅基锗锡光电子器件研究进展 第十三届全国光学青年学术论坛 2023-08-12
（3）高锡组分锗锡外延生长与红外光电子器件 第二十四届全国半导体物理学术会议 2023-07-13
（4）Ge1-xSnx及Ge1-xPbx合金的溅射外延生长研究 第十三届全国分子束外延学术会议 2019-08-14
（5）Ge1-xPbx合金的外延生长及光电探测器研究 第十三届全国硅基光电子材料及器件研讨会 2019-06-13
（6）Ge1-xSnx和Ge1-x-ySixSny单晶薄膜的溅射外延制备研究 中国材料大会 2018-07-12