基本信息
宋三年  男  硕导  中国科学院上海微系统与信息技术研究所
电子邮件: songsannian@mail.sim.ac.cn
通信地址: 上海市长宁路865号8号楼407室
邮政编码: 200050

招生信息

   
招生专业
080903-微电子学与固体电子学
080501-材料物理与化学
招生方向
微电子学与固体电子学
材料物理与化学

教育背景

2003-10--2008-09   同济大学   博士

工作经历

   
工作简历
2008-11~2010-12,中科院上海微系统与信息技术研究所, 博士后

专利与奖励

   
专利成果
( 1 ) 低功耗抗疲劳的相变存储单元及制备方法, 发明, 2012, 第 1 作者, 专利号: 201010271248.3
( 2 ) 导电氧化物过渡层及含该过渡层的相变存储器单元, 发明, 2012, 第 1 作者, 专利号: 200910055148.4
( 3 ) 低功耗高稳定性的相变存储单元及制备方法, 发明, 2011, 第 2 作者, 专利号: 200910201171.X
( 4 ) 一种纳米复合相变材料及其制备与应用, 发明, 2011, 第 1 作者, 专利号: 200910195481.5
( 5 ) 制备相变材料的溅射靶材的方法, 发明, 2011, 第 3 作者, 专利号: 200910196760.3
( 6 ) 一种纳米复合相变材料及其制备方法, 发明, 2010, 第 1 作者, 专利号: 200910048204.1
( 7 ) 纳米复合相变材料、制备方法及其在相变存储器中的应用, 发明, 2013, 第 2 作者, 专利号: 201110110342.5
( 8 ) 一种复合相变材料靶材及其制备与应用, 发明, 2012, 第 3 作者, 专利号: 200910196759.0
( 9 ) 制备钛-锑-碲相变材料的方法及相变存储单元制备方法, 发明, 2012, 第 1 作者, 专利号: 2012105375584
( 10 ) 用于相变存储器的薄膜材料及其制备方法, 发明, 2013, 第 2 作者, 专利号: 201110306843.0
( 11 ) 纳米复合相变材料、制备方法、及作为相变存储器的用途, 发明, 2012, 第 1 作者, 专利号: 201010105702.8
( 12 ) 一种Ti-Sb2Te相变存储材料, 发明, 2013, 第 5 作者, 专利号: 201210076528.8
( 13 ) 复合相变存储材料、制备复合相变存储材料薄膜的方法, 发明, 2013, 第 5 作者, 专利号: 201010275460.7
( 14 ) 钨-锑-碲相变材料沉积方法及相变存储单元制备方法, 发明, 2012, 第 1 作者, 专利号: 2012105793960
( 15 ) 一种三维堆叠型相变存储阵列器件及制备方法, 发明, 2016, 第 3 作者, 专利号: 201610028134.3
( 16 ) 相变薄膜材料、相变存储器单元及其制备方法, 发明, 2015, 第 2 作者, 专利号: 201510792042.8
( 17 ) 存储阵列、存储对象逻辑关系的存储芯片及方法, 发明, 2015, 第 1 作者, 专利号: 201510960374.2
( 18 ) 相变材料GeTe的耦合等离子体刻蚀方法, 发明, 2014, 第 5 作者, 专利号: 2014107681422
( 19 ) 一种Cr掺杂Ge2Sb2Te5相变材料、相变存储器单元及其制备方法, 发明, 2015, 第 5 作者, 专利号: 2015103910198
( 20 ) 用于相变存储器的Zr-Sb-Te系列相变材料及其制备方法, 发明, 2015, 第 5 作者, 专利号: 2015101368782
( 21 ) 一种相变材料、该相变材料制成的相变存储器及制备方法, 发明, 2017, 第 5 作者, 专利号: 201410682337.5
( 22 ) 用于相变存储器的Zr-Sb-Te系列相变材料及其制备方法, 发明, 2017, 第 5 作者, 专利号: 201510136878.2
( 23 ) 一种Al-Sb-Ge相变材料、相变存储器单元及其制备方法, 发明, 2017, 第 2 作者, 专利号: 201711213604.4
( 24 ) 一种Ge-Te-Al-As阈值开关材料、阈值开关器件单元及其制备方法, 发明, 2017, 第 2 作者, 专利号: 201711385751.X 

出版信息

   
发表论文
(1) Covalent functionalization of black phosphorus with conjugated polymer for Information storage, Angewandte Chemie International Edition, 2018, 第 5 作者
(2) Effect of Ti additions on structure and phase stability of Sb2Te3 thin films by experimental and theoretical methods, Journal of Materials Science-Materials in Electronics, 2018, 通讯作者
(3) Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory, Applied Physics Letters, 2018, 第 8 作者
(4) Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum, AIP Advances, 2018, 第 9 作者
(5) . SiC-Doped Ge2Sb2Te5 Phase-Change Material: A Candidate for High-Density Embedded Memory Application, Advanced Electronic Materials, 2018, 通讯作者
(6) Pyrolytically Modified Polyacrylonitrile-Covalently Grafted MoS2 Nanosheets for a Nonvolatile Rewritable Memory Device, Advanced Electronic Materials, 2018, 第 3 作者
(7) Viologen-Hypercrosslinked Ionic Porous Polymer Films as Active Layers for Electronic and Energy Storage Devices, Advanced Materials Interfaces, 2018, 第 7 作者
(8) Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory, Nanoscale, 2018, 第 5 作者
(9) The ultrafast phase-change memory with high-thermal stability based on SiC-doped antimony, Scripta Materialia, 2017, 通讯作者
(10) The high-thermal stability and ultrafast phase change memory based on Ge1.6Te-GaSb nano-composite alloys, Journal of Alloys and Compounds, 2017, 通讯作者
(11) Local structural characteristics of Sb2Te3 films studied by reverse Monte Carlo modeling, Nuclear Science and Techniques, 2017, 通讯作者
(12) Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory, Journal of Materials Science-Materials in Electronics, 2017, 第 2 作者
(13) Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability, ACS Applied Materials & Interfaces, 2017, 第 7 作者
(14) Threshold Switching in SiGeAsTeN Chalcogenide Glass Prepared by As Ion Implantation into sputtered SiGeTeN film, Applied Physics Letters, 2017, 第 7 作者
(15) TixSb100-x thin films as candidates for phase-change memory application, Applied Physics Letters, 2017, 第 6 作者
(16) Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application, Nanotechnology, 2017, 第 6 作者
(17) The investigations of characteristics of Sb2Te as a base phase-change material, Solid-state Electronics, 2017, 第 6 作者
(18) Trapping analysis and countermeasure for arsenic auto-doping in 40-nm epitaxial diode arrays and CMOS integration, Materials Science in Semiconductor Processing, 2017, 第 5 作者
(19) Sb7Te3/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory, Materials Science and Engineering B-Advanced Functional Solid-state Materials, 2017, 第 4 作者
(20) Investigation on the crystallization properties and structure of oxygen-doped Ge8Sb92 phase change thin films, Journal of Physics D-Applied Physics, 2017, 第 5 作者
(21) Ultra-high speed and low-power superlattice-like Sn18Sb82-SnSe2 thin films for phase change memory applications, MATERIALS LETTERS, 2016, 第 4 作者
(22) Superlattice-like film for high data retention and high speed phase change random access memory, SOLID-STATE ELECTRONICS, 2016, 通讯作者
(23) Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications, MATERIALS LETTERS, 2016, 通讯作者
(24) Performance improvement in a Ti-Sb-Te phase change material by GaSb doping, CRYSTENGCOMM, 2016, 通讯作者
(25) Sb-Te-Se composite film with high-thermal stability for phase-change memory application, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 通讯作者
(26) Theoretical research on structures of aminopyrimidine germanium(II) precursors and their application in film formation, RUSSIAN JOURNAL OF GENERAL CHEMISTRY, 2015, 第 2 作者
(27) Synthesis and thermal properties of the pyrazolato germanium complexes, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2015, 第 2 作者
(28) Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application, Chinese Physics Letters, 2015, 通讯作者
(29) Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application, APPLIED SURFACE SCIENCE, 2015, 通讯作者
(30) Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices, THIN SOLID FILMS, 2015, 通讯作者
(31) Study on phase change properties of binary GaSb doped Sb-Se film, THIN SOLID FILMS, 2015, 第 2 作者
(32) Investigation of Cr-0.06(Sb4Te)(0.94) alloy for high-speed and high-data-retention phase change random access memory applications, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 通讯作者
(33) Local structure of AlSb2Te3 thin film studied by experimental and theoretical methods, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2015, 通讯作者
(34) Ni-doped GST materials for high speed phase change memory applications, MATERIALS RESEARCH BULLETIN, 2015, 通讯作者
(35) Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon, NANOSCALE RESEARCH LETTERS, 2015, 第 1 作者
(36) Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas, APPLIED SURFACE SCIENCE, 2014, 通讯作者
(37) Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas, MICROELECTRONIC ENGINEERING, 2014, 通讯作者
(38) Phase change characteristics of Sb-rich Ga-Sb-Se materials, JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 第 2 作者
(39) Low-power phase change memory with multilayer TiN/W nanostructure electrode, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 第 2 作者
(40) Synthesis and thermal properties of aminopyrimidine Ge(II) precursors for CVD/ALD technology, RUSSIAN JOURNAL OF GENERAL CHEMISTRY, 2014, 第 2 作者
(41) Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material, Applied Physics Letters, 2013, 通讯作者
(42) Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application, Applied Physics Letters, 2013, 通讯作者
(43) Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory, Applied Physics Letters, 2013, 通讯作者
(44) Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory, Applied Physics Letters, 2013, 通讯作者
(45) Phase-change behaviors of Sb80Te20/SbSe nanocomposite multilayer films, Scripta Materialia, 2013, 通讯作者
(46) Characterization of Cu doping on GeTe for phase change memory application, Journal of Applied Physics, 2013, 通讯作者
(47) Performance improvement of phase-change memory cell with atomic layer deposition titanium dioxide buffer layer, Nanoscale Research Letters, 2013, 第 1 作者
(48) Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/ BCl3 inductively coupled plasmas, Microelectronic Engineering, 2013, 通讯作者
(49) Superlattice-like Sb50Se50/Ga30Sb70 thin films for high-speed and high density phase change memory application, Applied Physics Letters, 2013, 通讯作者
(50) Al19Sb54Se27 material for high stability and high-speed phase-change memory applications, Scripta Materialia, 2013, 第 4 作者
(51) Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application,  Journal of Alloys and Compounds, 2013, 第 3 作者

科研活动

   
科研项目
( 1 ) 钛锑碲相变材料的相变机理与微缩特性研究, 主持, 国家级, 2014-01--2017-12
( 2 ) 半导体存储器制备与测试平台, 参与, 省级, 2013-12--2015-11
( 3 ) 钛锑碲相变材料的相变机理与尺寸效应研究, 主持, 省级, 2013-07--2014-06
( 4 ) 高密度交叉阵列结构的新型存储器件与集成, 参与, 国家级, 2017-07--2022-06
( 5 ) 高密度阻变存储器的材料器件与集成技术, 主持, 国家级, 2018-05--2022-04
( 6 ) 上海市半导体存储器制备与测试专业技术服务平台, 参与, 研究所(学校), 2017-04--2020-03
( 7 ) 上海市储存器纳米制造重点实验室, 参与, 研究所(学校), 2018-04--2021-04
( 8 ) 大容量三维相变存储器纳米存储阵列制备系统, 参与, 部委级, 2018-01--2019-12

指导学生

已指导学生

沈兰兰  硕士研究生  085209-集成电路工程  

现指导学生

李林  硕士研究生  085209-集成电路工程