基本信息
宋三年  男  博导  中国科学院上海微系统与信息技术研究所
电子邮件: songsannian@mail.sim.ac.cn
通信地址: 上海市长宁路865号8号楼407室
邮政编码: 200050

招生信息

   
招生专业
080903-微电子学与固体电子学
080501-材料物理与化学
招生方向
相变存储器材料、工艺、器件和芯片

教育背景

2003-10--2008-09   同济大学   博士

工作经历

   
工作简历
2018-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2011-01~2017-12,中国科学院上海微系统与信息技术研究所, 副研究员
2008-11~2010-12,中科院上海微系统与信息技术研究所, 博士后
社会兼职
2019-11-01-2022-11-01,上海市电子学会, 副理事长

专利与奖励

   
奖励信息
(1) 2021年华为奥林帕斯先锋奖, 一等奖, 其他, 2021
(2) 上海市自然科学奖, 一等奖, 省级, 2020
(3) 2019年中国材料研究学会科学技术奖, 一等奖, 省级, 2019
(4) 第五届“纳米之星”创新创业大赛团队组一等奖, 一等奖, 其他, 2019
(5) 上海市科学发明奖, 二等奖, 省级, 2018
(6) 第二十届中国国际工业博览会创新银奖, 二等奖, 其他, 2018
专利成果
[1] 周夕淋, 朱栩旭, 宋志棠, 宋三年. 一种界面相变存储材料、相变存储器及其制备方法. 202210551303.7, 2022-05-18.

[2] 周夕淋, 郑加, 宋三年, 蔡道林, 宋志棠. 一种高密度相变存储材料、相变存储器及其制备方法. 202210229678.1, 2022-03-09.

[3] 袁祯晖, 宋三年, 宋志棠, 李小丹, 吴青玉. 一种阈值开关材料、阈值开关器件单元及其制备方法. CN114824067A, 2022-02-21.

[4] 宋志棠, 周夕淋, 王浩敏, 宋三年. 一种高性能相变存储器及其制备方法. 202111106532.X, 2021-09-22.

[5] 周夕淋, 朱栩旭, 宋志棠, 宋三年, 吴良才. 一种高度织构取向相变存储材料及其制备方法. 202110708610.7, 2021-06-25.

[6] 宋三年, 薛媛, 宋志棠. 一种相变材料、相变存储单元及其制备方法. CN: CN112397644A, 2021-02-23.

[7] 宋志棠, 宋三年, 薛媛, 王若冰. 一种高稳定性相变存储单元及其制备方法. CN: CN112133825A, 2020-12-25.

[8] 宋三年, 李林, 薛媛, 宋志棠. 钽-锑-碲相变材料的沉积方法及存储器单元的制备方法. CN: CN111564553A, 2020-08-21.

[9] 薛媛, 宋三年, 宋志棠. 一种Ta-Ge-Sb-Te相变材料及其制备方法和相变存储器单元. CN: CN111463345A, 2020-07-28.

[10] 宋志棠, 宋三年, 薛媛, 袁祯晖. 一种OTS选通材料、OTS选通单元及其制备方法和存储器. CN: CN111463346A, 2020-07-28.

[11] 宋志棠, 王若冰, 宋三年. 一种相变材料、相变存储器单元及其制作方法. CN: CN111320145A, 2020-06-23.

[12] 武仁杰, 宋三年, 贾淑静, 宋志棠. 一种OTS材料、选通器单元及其制备方法. CN: CN111326651A, 2020-06-23.

[13] 宋志棠, 宋三年. 一种碳掺杂相变存储材料靶材及其制备方法. CN: CN110846626A, 2020-02-28.

[14] 宋志棠, 宋三年. 一种相变存储器及其制作方法. CN: CN110335942A, 2019-10-15.

[15] 章思帆, 吴良才, 刘广宇, 宋志棠, 宋三年. Al-Sc-Sb-Te相变材料、相变存储器单元及其制备方法. CN: CN110148668A, 2019-08-20.

[16] 宋志棠, 薛媛, 薛媛, 王若冰. 一种相变材料、相变存储单元及其制备方法. CN: CN110061131A, 2019-07-26.

[17] 宋文雄, 赵进, 宋志棠, 宋三年. 一种相变材料、相变存储单元及其制备方法. CN: CN110061131A, 2019-07-26.

[18] 宋志棠, 郑龙, 宋三年, 任堃, 朱敏, 宋文雄. 相变薄膜结构、相变存储单元及其制备方法及相变存储器. CN: CN109935688A, 2019-06-25.

[19] 宋志棠, 郑龙, 宋三年. 相变薄膜、相变存储单元及其制备方法及相变存储器. CN: CN109728162A, 2019-05-07.

[20] 宋志棠, 郭天琪, 宋三年. 一种基于氧化物离子注入的选通材料、选通器单元及其制备方法. CN: CN109545964A, 2019-03-29.

[21] 薛媛, 宋三年, 郭天琪, 宋志棠. Ta-Sb-Te相变材料、相变存储器单元及其制备方法. CN: CN108899417A, 2018-11-27.

[22] 宋志棠, 宋三年, 薛媛. 一种Ge-Te-Al-As阈值开关材料、阈值开关器件单元及其制备方法. CN: CN108110026A, 2018-06-01.

[23] 薛媛, 宋三年, 郭天琪, 宋志棠. 一种Al-Sb-Ge相变材料、相变存储器单元及其制备方法. CN: CN108110135A, 2018-06-01.

[24] 李乐, 宋三年, 宋志棠. 相变薄膜材料、相变存储器单元及其制备方法. CN: CN106711325A, 2017-05-24.

[25] 郭天琪, 宋三年, 沈兰兰, 宋志棠. Ge‑Sb‑Se相变材料、相变存储器单元及其制备方法. CN: CN106299113A, 2017-01-04.

[26] 宋志棠, 陈小刚, 李喜, 宋三年, 陈后鹏. 行列互联的异构多核心类脑芯片及其使用方法. CN: CN105913119A, 2016-08-31.

[27] 刘燕, 宋志棠, 宋三年, 刘波. 一种三维堆叠相变存储阵列器件及其制备方法. CN: CN105655368A, 2016-06-08.

[28] 宋三年, 陈小刚, 宋志棠, 李喜, 陈后鹏. 存储阵列、存储对象逻辑关系的存储芯片及方法. CN: CN105632551A, 2016-06-01.

[29] 王青, 刘波, 夏洋洋, 张中华, 宋三年, 宋志棠, 封松林. 一种Cr掺杂Ge 2 Sb 2 Te 5 相变材料、相变存储器单元及其制备方法. CN: CN105047816A, 2015-11-11.

[30] 王青, 刘波, 夏洋洋, 张中华, 宋三年, 宋志棠, 封松林. 一种Cr掺杂Ge 2 Sb 2 Te 5 相变材料、相变存储器单元及其制备方法. 中国: CN105047816A, 2015-11-11.

[31] 宋志棠, 郑勇辉, 成岩, 刘卫丽, 宋三年, 朱敏. 用于相变存储器的Zr-Sb-Te系列相变材料及其制备方法. CN: CN104831235A, 2015-08-12.

[32] 王青, 刘波, 夏洋洋, 张中华, 宋三年, 宋志棠, 封松林. 一种Sb-Te-Cr相变材料、相变存储器单元及其制备方法. CN: CN104716260A, 2015-06-17.

[33] 夏洋洋, 刘波, 王青, 张中华, 宋三年, 宋志棠, 封松林. 相变材料GeTe的耦合等离子体刻蚀方法. CN: CN104409333A, 2015-03-11.

[34] 王青, 刘波, 夏洋洋, 张中华, 宋三年, 宋志棠, 封松林. 一种相变材料、该相变材料制成的相变存储器及制备方法. CN: CN104409628A, 2015-03-11.

[35] 宋三年, 宋志棠, 吴良才, 饶峰, 刘波, 彭程, 张中华. 钨-锑-碲相变材料沉积方法及相变存储单元制备方法. CN: CN103898474A, 2014-07-02.

[36] 顾怡峰, 宋志棠, 宋三年, 刘波, 封松林. 用于相变存储器的Al-Sb-Se材料及制备方法. CN: CN103855302A, 2014-06-11.

[37] 顾怡峰, 宋志棠, 席韡, 宋三年, 刘波, 封松林. 多级电阻转换存储单元及存储器. CN: CN103855301A, 2014-06-11.

[38] 宋志棠, 顾怡峰, 宋三年. 高速、高密度、低功耗的相变存储器单元及制备方法. CN: CN103682089A, 2014-03-26.

[39] 宋三年, 宋志棠, 张中华, 成岩, 蔡道林. 一种神经元器件及神经网络. CN: CN103530690A, 2014-01-22.

[40] 吴良才, 朱敏, 宋志棠, 饶峰, 宋三年, 刘波, 封松林. 一种Ti-Sb 2 Te相变存储材料. CN: CN102569652B, 2013-11-06.

[41] 宋志棠, 任堃, 饶峰, 宋三年, 陈邦明. 相变存储单元及其制备方法. CN: CN103346258A, 2013-10-09.

[42] 张中华, 宋三年, 宋志棠, 彭程, 吕业刚. 用于相变存储器的Sn-Ge-Te薄膜材料及其制备方法. CN: CN103236495A, 2013-08-07.

[43] 张中华, 宋三年, 宋志棠, 吕叶刚. 用于相变存储器的Ga-Ge-Sb-Te薄膜材料. CN: CN103050624A, 2013-04-17.

[44] 宋三年, 宋志棠, 张中华, 顾怡峰. 钛-锑-碲相变材料沉积方法及相变存储单元的制备方法. CN: CN103000807A, 2013-03-27.

[45] 宋三年, 宋志棠, 吴良才, 饶峰, 刘波, 朱敏. 制备钛-锑-碲相变材料的方法及相变存储单元制备方法. CN: CN102978588A, 2013-03-20.

[46] 吕业刚, 宋三年, 宋志棠, 吴良才, 饶峰, 刘波. 具有类超晶格结构的相变存储单元及其制备方法. CN: CN102810636A, 2012-12-05.

[47] 吕业刚, 宋三年, 宋志棠, 吴良才, 饶峰, 刘波. 低功耗相变存储单元及其制备方法. CN: CN102779941A, 2012-11-14.

[48] 吴良才, 朱敏, 宋志棠, 饶峰, 宋三年, 刘波, 封松林. 一种Sb-Te-Ti相变存储材料及Ti-Sb 2 Te相变存储材料. CN: CN102569652A, 2012-07-11.

[49] 吕业刚, 宋三年, 宋志棠. 相变存储材料及其制备方法、具有相变存储材料的存储器及其制备方法. CN: CN102544355A, 2012-07-04.

[50] 吕业刚, 宋三年, 彭程, 饶峰, 宋志棠, 刘波, 吴良才. 用于相变存储器的薄膜材料及其制备方法. CN: CN102361063A, 2012-02-22.

[51] 吴良才, 朱敏, 宋志棠, 饶峰, 宋三年, 彭程, 刘波, 封松林. 一种Sb-Te-Ti相变存储材料. CN: CN102268738A, 2011-12-07.

[52] 吕业刚, 宋三年, 宋志棠, 刘波, 饶峰, 吴良才. 一种相变存储材料及其制备方法. CN: CN102227015A, 2011-10-26.

[53] 吕业刚, 宋三年, 宋志棠. 纳米复合相变材料、制备方法及其在相变存储器中的应用. CN: CN102169958A, 2011-08-31.

[54] 宋三年, 宋志棠, 吕业刚. Sb 2 Te 3 -HfO 2 纳米复合相变材料及其在相变存储器中的用途. 中国: CN102157681A, 2011-08-17.

[55] 宋三年, 宋志棠, 吕业刚. Sb 2 Te 3 -HfO 2 纳米复合相变材料及其在相变存储器中的用途. CN: CN102157681A, 2011-08-17.

[56] 吕业刚, 宋三年, 宋志棠. 纳米复合相变材料及其在相变存储器中的用途. CN: CN102082228A, 2011-06-01.

[57] 宋志棠, 张挺, 饶峰, 吴良才, 宋三年. 复合相变存储材料、制备复合相变存储材料薄膜的方法. CN: CN101984512A, 2011-03-09.

[58] 宋三年, 宋志棠, 吕业刚. 低功耗抗疲劳的相变存储单元及制备方法. CN: CN101931049A, 2010-12-29.

[59] 宋三年, 宋志棠. 纳米复合相变材料、制备方法、及作为相变存储器的用途. CN: CN101783391A, 2010-07-21.

[60] 宋志棠, 宋三年. 低功耗高稳定性的相变存储单元及制备方法. CN: CN101752497A, 2010-06-23.

[61] 宋志棠, 陈邦明, 宋三年. 制备相变材料的溅射靶材的方法. CN: CN101665916A, 2010-03-10.

[62] 宋志棠, 陈邦明, 宋三年. 一种复合相变材料靶材及其制备方法. CN: CN101660119A, 2010-03-03.

[63] 宋三年, 宋志棠, 封松林. 一种纳米复合相变材料及其制备与应用. CN: CN101660118A, 2010-03-03.

[64] 宋三年, 宋志棠, 刘 波, 吴良才, 封松林. 导电氧化物过渡层及含该过渡层的相变存储器单元. CN: CN101615655A, 2009-12-30.

[65] 宋三年, 宋志棠, 万旭东, 谢志峰, 封松林. 一种纳米复合相变材料及其制备方法. CN: CN101521260A, 2009-09-02.

出版信息

   
发表论文
[1] Zheng, Long, Song, Zhitang, Song, Wenxiong, Zhu, Xiaoqin, Song, Sannian. Fabrication of stable multi-level resistance states in a Nb-doped Ge2Sb2Te5 device. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2023, 11(11): 3770-3777, http://dx.doi.org/10.1039/d3tc00233k.
[2] Wang, Qiang, Luo, Ren, Wang, Yankun, Fang, Wencheng, Jiang, Luyue, Liu, Yangyang, Wang, Ruobing, Dai, Liyan, Zhao, Jinyan, Bi, Jinshun, Liu, Zenghui, Zhao, Libo, Jiang, Zhuangde, Song, Zhitang, Schwarzkopf, Jutta, Schroeder, Thomas, Wu, Shengli, Ye, ZuoGuang, Ren, Wei, Song, Sannian, Niu, Gang. Set/Reset Bilaterally Controllable Resistance Switching Ga-doped Ge2Sb2Te5 Long-Term Electronic Synapses for Neuromorphic Computing. ADVANCED FUNCTIONAL MATERIALS. 2023, http://dx.doi.org/10.1002/adfm.202213296.
[3] Shao, Mingyue, Qiao, Yang, Xue, Yuan, Song, Sannian, Song, Zhitang, Li, Xiaodan. Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications. NANOMATERIALS[J]. 2023, 13(4): http://dx.doi.org/10.3390/nano13040633.
[4] Wang, Qiang, Niu, Gang, Wang, Ruobing, Luo, Ren, Ye, ZuoGuang, Bi, Jinshun, Li, Xi, Song, Zhitang, Ren, Wei, Song, Sannian. Reliable Ge2Sb2Te5 based phase-change electronic synapses using carbon doping and programmed pulses. JOURNAL OF MATERIOMICS[J]. 2022, 8(2): 382-391, http://dx.doi.org/10.1016/j.jmat.2021.08.004.
[5] Qiao, Yang, Zhao, Jin, Sun, Haodong, Song, Zhitang, Xue, Yuan, Li, Jiao, Song, Sannian. Pt Modified Sb2Te3 Alloy Ensuring High-Performance Phase Change Memory. NANOMATERIALS[J]. 2022, 12(12): http://dx.doi.org/10.3390/nano12121996.
[6] Wang, Ruobing, Guo, Tianqi, Yao, Dongning, Song, Sannian, Song, Zhitang. High Driving Current Selector Based on As-Implanted HfO2 Thin Film for 3D Phase Change Memory. ACS APPLIED ELECTRONIC MATERIALS[J]. 2022, 4(1): 99-103, http://dx.doi.org/10.1021/acsaelm.1c00980.
[7] Li, Wenfei, Cao, Xiyuan, Song, Sannian, Wu, Longsheng, Wang, Ruobing, Jin, Yi, Song, Zhitang, Wu, Aimin. Ultracompact High-Extinction-Ratio Nonvolatile On-Chip Switches Based on Structured Phase Change Materials. LASER & PHOTONICS REVIEWS[J]. 2022, 16(6): http://dx.doi.org/10.1002/lpor.202100717.
[8] Wang, Ruobing, Yuan, Zhenhui, Chen, Xin, Song, Sannian, Song, Zhitang. Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2022, 33(13): 10423-10429, http://dx.doi.org/10.1007/s10854-022-08029-8.
[9] Zhu, Yifan, Wei, Wenqi, Yi, Ailun, Jin, Tingting, Shen, Chen, Wang, Xudong, Zhou, Liping, Wang, Chengli, Ou, Weiwen, Song, Sannian, Wang, Ting, Zhang, Jianjun, Ou, Xin, Zhang, Jiaxiang. Hybrid Integration of Deterministic Quantum Dot-Based Single-Photon Sources with CMOS-Compatible Silicon Carbide Photonics. LASER & PHOTONICS REVIEWS. 2022, http://dx.doi.org/10.1002/lpor.202200172.
[10] Wang, Qiang, Niu, Gang, Luo, Ren, Fang, Wencheng, Wang, Ruobing, Xu, Yongkang, Song, Zhitang, Ren, Wei, Song, Sannian. PCRAM electronic synapse measurements based on pulse programming engineering. MICROELECTRONIC ENGINEERING[J]. 2022, 258: http://dx.doi.org/10.1016/j.mee.2022.111773.
[11] Xue, Yuan, Song, Sannian, Chen, Xiaogang, Yan, Shuai, Lv, Shilong, Xin, Tianjiao, Song, Zhitang. Enhanced performance of phase change memory by grain size reduction. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2022, 10(9): 3585-3592, http://dx.doi.org/10.1039/d1tc06045g.
[12] Wang, Qiang, Niu, Gang, Ren, Wei, Wang, Ruobing, Chen, Xiaogang, Li, Xi, Ye, ZuoGuang, Xie, YaHong, Song, Sannian, Song, Zhitang. Phase Change Random Access Memory for Neuro-Inspired Computing. ADVANCED ELECTRONIC MATERIALSnull. 2021, 7(6): http://dx.doi.org/10.1002/aelm.202001241.
[13] Wang, Chengli, Shen, Chen, Yi, Ailun, Yang, Shumin, Zhou, Liping, Zhu, Yifan, Huang, Kai, Song, Sannian, Zhou, Min, Zhang, Jiaxiang, Ou, Xin. Visible and near-infrared microdisk resonators on a 4H-silicon-carbide-on-insulator platform. OPTICS LETTERS[J]. 2021, 46(12): 2952-2955, [14] Zheng, Long, Song, Wenxiong, Zhang, Sifan, Song, Zhitang, Zhu, Xiaoqin, Song, Sannian. Designing artificial carbon clusters using Ge2Sb2Te5/C superlattice-like structure for phase change applications. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 882: http://dx.doi.org/10.1016/j.jallcom.2021.160695.
[15] Yuan, Zhenhui, Li, Xiaodan, Song, Sannian, Song, Zhitang, Zha, Jiawei, Han, Gang, Yang, Bingjun, Jimbo, Takehito, Suu, Koukou. The enhanced performance of a Si-As-Se ovonic threshold switching selector. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2021, 9(38): 13376-13383, http://dx.doi.org/10.1039/d1tc02730a.
[16] Yuan, Zhenhui, Li, Xiaodan, Wang, Hao, Xue, Yuan, Song, Sannian, Song, Zhitang, Zhu, Shuaishuai, Han, Gang, Yang, Bingjun, Jimbo, Takehito, Suu, Koukou. Characteristic of As3Se4-based ovonic threshold switching device. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2021, 32(6): 7209-7214, http://dx.doi.org/10.1007/s10854-021-05429-0.
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[139] Zhang, Ling, Song, Sannian, Xi, Wei, Li, Le, He, Yan, Lin, He, Song, Zhitang. Local structure of AlSb2Te3 thin film studied by experimental and theoretical methods. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS[J]. 2015, 83: 52-57, http://dx.doi.org/10.1016/j.jpcs.2015.03.019.
[140] Song, Sannian, Yao, Dongning, Song, Zhitang, Gao, Lina, Zhang, Zhonghua, Li, Le, Shen, Lanlan, Wu, Liangcai, Liu, Bo, Cheng, Yan, Feng, Songlin. Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon. NANOSCALE RESEARCH LETTERS[J]. 2015, 10(1): 1-5, http://ir.sinap.ac.cn/handle/331007/24527.
[141] Hu, Yifeng, He, Zifang, Zhai, Jiwei, Wu, Pengzhi, Lai, Tianshu, Song, Sannian, Song, Zhitang. Superlattice-like SnSb4/Ga3Sb7 thin films for ultrafast switching phase-change memory application. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2015, 121(3): 1125-1131, https://www.webofscience.com/wos/woscc/full-record/WOS:000364914100034.
[142] Xia, Yangyang, Liu, Bo, Wang, Qing, Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Yao, Dongning, Xi, Wei, Guo, Xiaohui, Feng, Songlin. Study on the phase change material Cr-doped Sb3Te1 for application in phase change memory. JOURNAL OF NON-CRYSTALLINE SOLIDS[J]. 2015, 422: 46-50, http://dx.doi.org/10.1016/j.jnoncrysol.2015.05.013.
[143] Li, Le, Song, Sannian, Zhang, Zhonghua, Song, Zhitang, Cheng, Yan, Lv, Shilong, Wu, Liangcai, Liu, Bo, Feng, Songlin. Investigation of Cr-0.06(Sb4Te)(0.94) alloy for high-speed and high-data-retention phase change random access memory applications. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2015, 120(2): 537-542, https://www.webofscience.com/wos/woscc/full-record/WOS:000358236200018.
[144] Wang, Q, Song, S N, Song, Z T, Xu, C Y, Wang, D W, Ding, Y Q. Synthesis and thermal properties of the pyrazolato germanium complexes. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS[J]. 2015, 17(3-4): 489-493, https://www.webofscience.com/wos/woscc/full-record/WOS:000354075200036.
[145] Lu, Yegang, Song, Sannian, Shen, Xiang, Song, Zhitang, Wang, Guoxiang, Dai, Shixun. Study on phase change properties of binary GaSb doped Sb-Se film. THIN SOLID FILMS[J]. 2015, 589: 215-220, http://dx.doi.org/10.1016/j.tsf.2015.05.017.
[146] Wang, Quan, Song, Sannian, Song, Zhitang, Wang, Dawei, Ding, Yugiang. The synthesis, characterization and DFT calculations of highly volatile aminogermylene precursors and thin film investigation for CVD/ALD technology. INORGANIC CHEMISTRY COMMUNICATIONS[J]. 2015, 53: 26-30, http://dx.doi.org/10.1016/j.inoche.2015.01.008.
[147] He, Zifang, Liu, Ruirui, Wu, Pengzhi, Zhai, Jiwei, Lai, Tianshu, Song, Sannian, Song, Zhitang. High speed and high reliability in Ge8Sb92/Ga30Sb70 stacked thin films for phase change memory applications. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2015, 653: 334-337, http://dx.doi.org/10.1016/j.jallcom.2015.09.008.
[148] Li, Le, Song, Sannian, Zhang, Zhonghua, Zhu, Yueqing, Song, Zhitang, Cheng, Yan, Lv, Shilong, Liu, Bo, Chen, Liangliang. Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices. THIN SOLID FILMS[J]. 2015, 590: 13-16, http://dx.doi.org/10.1016/j.tsf.2015.07.056.
[149] Zhu, Xiaoqin, Hu, Yifeng, Zou, Hua, Sui, Yongxing, Xue, Jianzhong, Shen, Dahua, Zhang, Jianhao, Song, Sannian, Song, Zhitang, Sun, Shunping. Influence of N-doping on the thermal stability and switching speed of Zn15Sb85 phase change material. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2015, 26(2): 1212-1216, https://www.webofscience.com/wos/woscc/full-record/WOS:000349439500081.
[150] Zhu YueQin, Zhang ZhongHua, Song SanNian, Xie HuaQing, Song ZhiTang, Shen LanLan, Li Le, Wu LiangCai, Liu Bo. Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application. CHINESE PHYSICS LETTERS[J]. 2015, 32(7): http://lib.cqvip.com/Qikan/Article/Detail?id=665867328.
[151] Wang, Qing, Liu, Bo, Xia, Yangyang, Zhang, Zhonghua, Ji, Xinglong, Song, Sannian, Song, Zhitang, Xi, Wei, Yao, Dongning, Lv, Shilong, Feng, Songlin. CrxSb2Te1 materials for phase change memory with high speed and good thermal stability performance. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2015, 26(6): 4138-4143, https://www.webofscience.com/wos/woscc/full-record/WOS:000354404800100.
[152] Wang, Miao, Lu, Yegang, Shen, Xiang, Wang, Guoxiang, Li, Jun, Dai, Shixun, Song, Sannian, Song, Zhitang. Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5. CRYSTENGCOMM[J]. 2015, 17(26): 4871-4876, https://www.webofscience.com/wos/woscc/full-record/WOS:000356689400017.
[153] Chen, Liangliang, Song, Sannian, Song, Zhitang, Li, Le, Zhang, Zhonghua, Zheng, Yonghui, Zheng, Qianqian, Zhang, Xin, Zhu, Xiuwei, Shao, Hehong. Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application. APPLIED SURFACE SCIENCE[J]. 2015, 357: 603-607, http://dx.doi.org/10.1016/j.apsusc.2015.08.215.
[154] 朱月琴, 张中华, 宋三年, 谢华清, 宋志棠, 沈兰兰, 李乐, 吴良才, 刘波. Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application. 中国物理快报(英文版)[J]. 2015, 168-170, http://lib.cqvip.com/Qikan/Article/Detail?id=665867328.
[155] Hu, Yifeng, Zhai, Jiwei, Zeng, Huarong, Song, Sannian, Song, Zhitang. Improvement of reliability and power consumption for SnSb4 phase change film composited with Ga3Sb7 by superlattice-like method. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(17): https://www.webofscience.com/wos/woscc/full-record/WOS:000354984100624.
[156] Wang DongMin, Lu YeGang, Song SanNian, Wang Miao, Shen Xiang, Wang GuoXiang, Dai ShiXun, Song ZhiTang. Effect of Cu on the structure and phase-change characteristics of Sb2Te film for high-speed phase change random access memory. ACTA PHYSICA SINICA[J]. 2015, 64(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000362976600049.
[157] Wang, Quan, Song, Sannian, Song, Zhitang, Miao, Hongyan, Ding, Yuqiang. Theoretical research on structures of aminopyrimidine germanium(II) precursors and their application in film formation. RUSSIAN JOURNAL OF GENERAL CHEMISTRY[J]. 2015, 85(6): 1522-1527, https://www.webofscience.com/wos/woscc/full-record/WOS:000358219500027.
[158] Wang, Quan, Song, Sannian, Song, Zhitang, Wang, Dawei, Ding, Yuqiang. Synthesis and thermal properties of aminopyrimidine Ge(II) precursors for CVD/ALD technology. RUSSIAN JOURNAL OF GENERAL CHEMISTRY[J]. 2014, 84(10): 2027-2030, https://www.webofscience.com/wos/woscc/full-record/WOS:000345103200028.
[159] Zhang, Zhonghua, Gu, Yifeng, Song, Sannian, Song, Zhitang, Cheng, Yan, Liu, Bo, Zhu, Yueqin, Zhou, Dong, Feng, Songlin. Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000341189400045.
[160] Zhu, Xiaoqin, Hu, Yifeng, Xue, Jianzhong, Sui, Yongxing, Wu, Weihua, Zheng, Long, Yuan, Li, Song, Sannian, Song, Zhitang, Sun, Shunping. N-doped Zn15Sb85 phase-change materials for higher thermal stability and lower power consumption. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2014, 25(7): 2943-2947, https://www.webofscience.com/wos/woscc/full-record/WOS:000337167900015.
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[162] Lu, Yegang, Song, Sannian, Shen, Xiang, Wang, Guoxiang, Wu, Liangcai, Song, Zhitang, Liu, Bo, Dai, Shixun. Phase change characteristics of Sb-rich Ga-Sb-Se materials. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2014, 586: 669-673, https://www.webofscience.com/wos/woscc/full-record/WOS:000329856800107.
[163] Feng, Xiaoyi, Hu, Yifeng, Zhai, Jiwei, Wang, Changzhou, Song, Sannian, Song, Zhitang. Multi-step phase-change behavior in Ga30Sb70/SnSe2 nanocomposite multilayer thin films. JOURNAL OF APPLIED PHYSICS[J]. 2014, 115(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000337143500076.
[164] Feng, Xiaoyi, Wen, Ting, Zhai, Jiwei, Lai, Tianshu, Wang, Changzhou, Song, Sannian, Song, Zhitang. Ge2Sb2Te5/SnSe2 nanocomposite multilayer thin films for phase change memory application. APPLIED SURFACE SCIENCE[J]. 2014, 316: 286-291, http://dx.doi.org/10.1016/j.apsusc.2014.07.138.
[165] Lu, Yegang, Song, Sannian, Shen, Xiang, Song, Zhitang, Wu, Liangcai, Wang, Guoxiang, Dai, Shixun. Low-power phase change memory with multilayer TiN/W nanostructure electrode. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2014, 117(4): 1933-1940, https://www.webofscience.com/wos/woscc/full-record/WOS:000345293200036.
[166] Hu, Yifeng, Feng, Xiaoyi, Zhai, Jiwei, Wen, Ting, Lai, Tianshu, Song, Sannian, Song, Zhitang. Superlattice-like Ge8Sb92/Ge thin fins for high speed and low power consumption phase change memory application. SCRIPTA MATERIALIA[J]. 2014, 93: 4-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000345478100001.
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[168] Liu, Xinjun, Nandi, Sanjoy Kumar, Venkatachalam, Dinesh Kumar, Belay, Kidane, Song, Sannian, Elliman, Robert Glen. Reduced Threshold Current in NbO2 Selector by Engineering Device Structure. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(10): 1055-1057, https://www.webofscience.com/wos/woscc/full-record/WOS:000343011300027.
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[171] Sannian Song. Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/ BCl3 inductively coupled plasmas. Microelectronic Engineering. 2013, [172] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Cheng, Yan, Rao, Feng, Ren, Kun, Song, Sannian, Liu, Bo, Feng, Songlin. Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high-performance phase-change memory. ACTA MATERIALIA[J]. 2013, 61(19): 7324-7333, https://www.webofscience.com/wos/woscc/full-record/WOS:000327683700026.
[173] Zhang Xu, Liu Bo, Song SanNian, Yao DongNing, Zhu Min, Rao Feng, Wu LiangCai, Song ZhiTang, Feng SongLin. Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3. JOURNAL OF INORGANIC MATERIALS[J]. 2013, 28(12): 1364-1368, https://www.webofscience.com/wos/woscc/full-record/WOS:000329382400017.
[174] 刘旭焱, 宋三年, 刘卫丽, 宋志棠. 三维相变存储阵列驱动二极管的制备研究. 功能材料与器件学报[J]. 2013, 19(6): 270-274, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5024855&detailType=1.
[175] Lu, Yegang, Song, Sannian, Shen, Xiang, Wu, Liangcai, Song, Zhitang, Liu, Bo, Dai, Shixun, Nie, Qihua. Investigation of Ga8Sb34Se58 Material for Low-Power Phase Change Memory. ECS SOLID STATE LETTERS[J]. 2013, 2(10): P94-P96, https://www.webofscience.com/wos/woscc/full-record/WOS:000322995700006.
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[178] Gu, Yifeng, Song, Sannian, Song, Zhitang, Cheng, Yan, Liu, Xuyan, Du, Xiaofeng, Liu, Bo, Feng, Sonlin. Reactive Ion Etching of SixSb2Te in CF4/Ar Plasma for Nonvolatile Phase-Change Memory Device. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2013, 13(2): 1594-1597, https://www.webofscience.com/wos/woscc/full-record/WOS:000318254500184.
[179] Hu, Yifeng, Li, Simian, Lai, Tianshu, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Al19Sb54Se27 material for high stability and high-speed phase-change memory applications. SCRIPTA MATERIALIA[J]. 2013, 69(1): 61-64, https://www.webofscience.com/wos/woscc/full-record/WOS:000319545100016.
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[181] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Gu, Yifeng, Chen, Bomy. Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material. APPLIED PHYSICS LETTERS[J]. 2013, 102(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000321145200049.
[182] Sun, Mingcheng, Song, Sannian, Song, Zhitang, Zhai, Jiwei, Liang, Guangfei, Wu, Yiqun. Phase-change behaviors of Sb80Te20/SbSe nanocomposite multilayer films. SCRIPTA MATERIALIA[J]. 2013, 68(7): 522-525, https://www.webofscience.com/wos/woscc/full-record/WOS:000314739900021.
[183] Lu, Yegang, Li, Simian, Song, Sannian, Song, Zhitang, Liu, Bo, Wen, Ting, Lai, Tianshu. Study on the Crystallization Process of GaSb-Sb2Te3 Pseudobinary Films for Phase-Change Random Access Memory. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2013, 13(2): 976-979, https://www.webofscience.com/wos/woscc/full-record/WOS:000318254500049.
[184] Zhang Xu, Liu Bo, Song SanNian, Yao DongNing, Zhu Min, Rao Feng, Wu LiangCai, Song ZhiTang, Feng SongLin. Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3. JOURNAL OF INORGANIC MATERIALS[J]. 2013, 28(12): 1364-1368, https://www.webofscience.com/wos/woscc/full-record/WOS:000329382400017.
[185] Zhang, Zhonghua, Peng, Cheng, Song, Sannian, Song, Zhitang, Cheng, Yan, Ren, Kun, Li, Xiaoyun, Rao, Feng, Liu, Bo, Feng, Songlin. Characterization of Cu doping on GeTe for phase change memory application. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000329173200064.
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[187] Sannian Song. Performance improvement of phase-change memory cell with atomic layer deposition titanium dioxide buffer layer. Nanoscale Research Letters. 2013, [188] Hu, Yifeng, Feng, Xiaoyi, Li, Simian, Lai, Tianshu, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Superlattice-like Sb50Se50/Ga30Sb70 thin films for high-speed and high density phase change memory application. APPLIED PHYSICS LETTERS[J]. 2013, 103(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000325779700045.
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[195] 张琪, 宋三年, 徐峰. Sb Rich Ge2Sb5Te5 Alloy for High-Speed Phase Change Random Access Memory Applications. CHINESE PHYSICS LETTERS[J]. 2012, 29(10): 221-223, http://ir.sim.ac.cn/handle/331004/114824.
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[200] Lu, Yegang, Song, Sannian, Song, Zhitang, Wu, Liangcai, He, Aodong, Gong, Yuefeng, Rao, Feng, Liu, Bo. Superlattice-like electrode for low-power phase-change random access memory. APPLIED PHYSICS LETTERS[J]. 2012, 101(11): http://ir.sim.ac.cn/handle/331004/115560.
[201] Wu, Liangcai, Zhu, Min, Song, Zhitang, Lv, Shilong, Zhou, Xilin, Peng, Cheng, Rao, Feng, Song, Sannian, Liu, Bo, Feng, Songlin. Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application. JOURNAL OF NON-CRYSTALLINE SOLIDS[J]. 2012, 358(17): 2409-2411, http://dx.doi.org/10.1016/j.jnoncrysol.2011.12.087.
[202] 张徐, 刘波, 彭程, 饶峰, 周夕淋, 宋三年, 王良咏, 成岩, 吴良才, 姚栋宁, 宋志棠, 封松林. Germanium Nitride as a Buffer Layer for Phase Change Memory. CHINESE PHYSICS LETTERS[J]. 2012, 29(10): 171-173, http://ir.sim.ac.cn/handle/331004/115565.
[203] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Zhu, Min, Peng, Cheng, Yao, Dongning, Song, Sannian, Liu, Bo, Feng, Songlin. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application. APPLIED PHYSICS LETTERS[J]. 2012, 101(14): http://ir.sim.ac.cn/handle/331004/114745.
[204] Hu, Yifeng, Sun, Mingcheng, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Multi-Step Resistance Memory Behavior in Ge2Sb2Te5/GeTe Stacked Chalcogenide Films. INTEGRATED FERROELECTRICS[J]. 2012, 140: 8-15, http://ir.sim.ac.cn/handle/331004/115432.
[205] Lu, Yegang, Song, Sannian, Song, Zhitang, Ren, Wanchun, Cheng, Yan, Liu, Bo. Crystallization Process of Amorphous GaSb5Te4 Film for High-Speed Phase Change Memory. APPLIED PHYSICS EXPRESS[J]. 2011, 4(9): http://www.irgrid.ac.cn/handle/1471x/390865.
[206] Lu, Yegang, Song, Sannian, Song, Zhitang, Ren, Kun, Liu, Bo, Feng, Songlin. Sb2Te3-HfO2 composite films for low-power phase change memory application. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2011, 105(1): 183-188, http://www.irgrid.ac.cn/handle/1471x/390967.
[207] Wang, Changzhou, Zhai, Jiwei, Song, Sannian, Song, Zhitang, Sun, Mingcheng, Shen, Bo. Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications. ELECTROCHEMICAL AND SOLID STATE LETTERS[J]. 2011, 14(7): H258-H260, http://www.irgrid.ac.cn/handle/1471x/390927.
[208] Cheng, Yan, Song, Zhitang, Gu, Yifeng, Song, Sannian, Rao, Feng, Wu, Liangcai, Liu, Bo, Feng, Songlin. Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change materials. APPLIED PHYSICS LETTERS[J]. 2011, 99(26): http://ir.sim.ac.cn/handle/331004/115536.
[209] Lu, Yegang, Song, Sannian, Song, Zhitang, Wu, Liangcai, Liu, Bo, Feng, Songlin, Guo, Xiaohui. Study on TiO2-doped Ge2Te3 films for phase-change memory application. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2011, 44(14): http://ir.sim.ac.cn/handle/331004/115509.
[210] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Cheng, Yan, Peng, Cheng, Yao, Dongning, Song, Sannian, Liu, Bo, Feng, Songlin, Chen, Bomy. Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. APPLIED PHYSICS LETTERS[J]. 2011, 99(3): http://www.irgrid.ac.cn/handle/1471x/390869.
[211] Lu, Yegang, Song, Sannian, Gong, Yuefeng, Song, Zhitang, Rao, Feng, Wu, Liangcai, Liu, Bo, Yao, Dongning. Ga-Sb-Se material for low-power phase change memory. APPLIED PHYSICS LETTERS[J]. 2011, 99(24): http://ir.sim.ac.cn/handle/331004/115535.
[212] Lu, Yegang, Song, Sannian, Song, Zhitang, Liu, Bo. Ga14Sb86 film for ultralong data retention phase-change memory. JOURNAL OF APPLIED PHYSICS[J]. 2011, 109(6): http://ir.sim.ac.cn/handle/331004/115505.
[213] Gu, Yifeng, Cheng, Yan, Song, Sannian, Zhang, Ting, Song, Zhitang, Liu, Xuyan, Du, Xiaofeng, Liu, Bo, Feng, Songlin. Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory. SCRIPTA MATERIALIA[J]. 2011, 65(7): 622-625, http://www.irgrid.ac.cn/handle/1471x/390936.
[214] Lu, Yegang, Song, Sannian, Song, Zhitang, Ren, Wanchun, Peng, Cheng, Cheng, Yan, Liu, Bo. Investigation of HfO2 doping on GeTe for phase change memory. SOLID STATE SCIENCES[J]. 2011, 13(11): 1943-1947, http://dx.doi.org/10.1016/j.solidstatesciences.2011.08.021.
[215] Wang, Changzhou, Zhai, Jiwei, Song, Sannian, Song, Zhitang, Yao, Xi. Phase transition behaviors of Ga30Sb70/Sb80Te20 nanocomposite multilayer films for application in phase change random access memory. CURRENT APPLIED PHYSICS[J]. 2011, 11(3): S345-S348, http://ir.sim.ac.cn/handle/331004/115507.
[216] Wu, Liangcai, Zhou, Xilin, Song, Zhitang, Zhu, Min, Cheng, Yan, Rao, Feng, Song, Sannian, Liu, Bo, Feng, Songlin. Sb-rich Si-Sb-Te Phase-Change Material for Phase-Change Random Access Memory Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2011, 58(12): 4423-4426, http://ir.sim.ac.cn/handle/331004/115533.
[217] Song, Sannian, Song, Zhitang, Wu, Liangcai, Liu, Bo, Feng, Songlin. Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx composite films. JOURNAL OF APPLIED PHYSICS[J]. 2011, 109(3): http://www.irgrid.ac.cn/handle/1471x/390900.
[218] Lu, Yegang, Song, Sannian, Song, Zhitang, Yao, Dongning, Xi, Wei, Yin, Weijun, Zheng, Hao, Feng, Songlin. Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film. APPLIED PHYSICS EXPRESS[J]. 2010, 3(11): http://ir.sim.ac.cn/handle/331004/94718.
[219] Wu, LC, Zhou, XL, Zhong Dianshiyanshi, Liu, Y, Ni, HN, Gong, YF, Rao, F, Yao, DL, Zhong Dianshiyanshi, Song, SN, Zhong Dianshiyanshi. Study of phase change memory cell with inserting buffer layer. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4null. 2010, 7(41337): 1207-1210, http://ir.sim.ac.cn/handle/331004/115465.
[220] Song, Sannian, Song, Zhitang, Lu, Yegang, Liu, Bo, Wu, Liangcai, Feng, Songlin. Sb2Te3-Ta2O5 nano-composite films for low-power phase-change memory application. MATERIALS LETTERS[J]. 2010, 64(24): 2728-2730, http://dx.doi.org/10.1016/j.matlet.2010.09.005.
[221] Gao, Lina, Zhai, Jiwei, Song, Sannian, Yao, Xi. Crystal orientation dependence of the out-of-plane dielectric properties for barium stannate titanate thin films. MATERIALS CHEMISTRY AND PHYSICS[J]. 2010, 124(1): 192-195, http://dx.doi.org/10.1016/j.matchemphys.2010.06.018.
[222] Song, Sannian, Song, Zhitang, Liu, Bo, Wu, Liangcai, Feng, Songlin. Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2010, 99(4): 767-770, http://ir.sim.ac.cn/handle/331004/94635.
[223] Shang, Fei, Zhai, Jiwei, Song, Sannian, Song, Zhitang, Wang, Changzhou. Performance improvement of phase change memory cell by using a cerium dioxide buffer layer. APPLIED PHYSICS LETTERS[J]. 2010, 96(20): http://www.irgrid.ac.cn/handle/1471x/378616.
[224] Wu, Liangcai, Zhou, Xilin, Song, Zhitang, Lian, Jie, Rao, Feng, Liu, Bo, Song, Sannian, Liu, Weili, Liu, Xuyan, Feng, Songlin. Au-197 irradiation study of phase-change memory cell with GeSbTe alloy. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2010, 207(10): 2395-2398, http://ir.sim.ac.cn/handle/331004/94717.
[225] Song, Sannian, Song, Zhitang, Liu, Bo, Wu, Liangcai, Feng, Songlin. Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory. MATERIALS LETTERS[J]. 2010, 64(3): 317-319, http://dx.doi.org/10.1016/j.matlet.2009.11.001.
[226] Shang, Fei, Zhai, Jiwei, Song, Sannian, Song, Zhitang, Wang, Changzhou. Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2010, 49(9): 094202-, http://ir.sim.ac.cn/handle/331004/94647.
[227] Song, Sannian, Zhai, Jiwei, Gao, Lina, Yao, Xi. Orientation-dependent dielectric properties of Ba(Sn0.15Ti0.85)O-3 thin films prepared by sol-gel method. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS[J]. 2009, 70(8): 1213-1217, http://dx.doi.org/10.1016/j.jpcs.2009.07.007.
[228] Tao Wei, Qing Wang, Sannian Song, Zhitang Song, Bo Liu. 39Reversible phase-change characteristics and structural origin in Cr doped Ge2Sb2Te5 thin films. THIN SOLID FILMS. http://dx.doi.org/10.1016/j.tsf.2020.138434.

科研活动

   
科研项目
( 1 ) 钛锑碲相变材料的相变机理与微缩特性研究, 负责人, 国家任务, 2014-01--2017-12
( 2 ) 半导体存储器制备与测试平台, 参与, 地方任务, 2013-12--2015-11
( 3 ) 钛锑碲相变材料的相变机理与尺寸效应研究, 负责人, 地方任务, 2013-07--2014-06
( 4 ) 高密度交叉阵列结构的新型存储器件与集成, 参与, 国家任务, 2017-07--2022-06
( 5 ) 高密度阻变存储器的材料器件与集成技术, 负责人, 国家任务, 2018-05--2022-04
( 6 ) 上海市半导体存储器制备与测试专业技术服务平台, 参与, 其他任务, 2017-04--2020-03
( 7 ) 上海市储存器纳米制造重点实验室, 参与, 其他任务, 2018-04--2021-04
( 8 ) 大容量三维相变存储器纳米存储阵列制备系统, 参与, 中国科学院计划, 2018-01--2019-12
( 9 ) 相变材料与阈值转变开关材料优选及其阈值转变机理研究, 负责人, 国家任务, 2019-01--2022-12
( 10 ) 新一代高速低功耗嵌入式相变存储器芯片, 负责人, 地方任务, 2020-10--2022-09
( 11 ) 易于与碳晶体管集成的新型存储器件关键基础研究, 负责人, 国家任务, 2021-11--2026-11
( 12 ) 基于相变存储的模拟存内计算芯片, 参与, 国家任务, 2022-01--2025-12

指导学生

已指导学生

沈兰兰  硕士研究生  085209-集成电路工程  

李林  硕士研究生  085209-集成电路工程  

许永康  硕士研究生  085209-集成电路工程  

现指导学生

袁祯晖  博士研究生  080903-微电子学与固体电子学  

倪圣兰  博士研究生  080903-微电子学与固体电子学  

吴青玉  硕士研究生  080903-微电子学与固体电子学  

李小丹  博士研究生  080903-微电子学与固体电子学  

陈致志  硕士研究生  085400-电子信息