基本信息
伊晓燕  女  博导  中国科学院半导体研究所
电子邮件: spring@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
085400-电子信息
080501-材料物理与化学
招生方向
GaN基LED量子效率提升技术研究
氮化物新型光电器件研究
新型光电器件与应用系统

教育背景

2003-09--2006-07   中国科学院半导体研究所   博士

工作经历

   
工作简历
2013-01~现在, 中国科学院半导体研究所, 研究员
2009-01~2012-12,中国科学院半导体研究所, 副研
2006-07~2008-12,中国科学院半导体研究所, 助研
2003-09~2006-07,中国科学院半导体研究所, 博士
社会兼职
2014-01-01-今,北京市第三代半导体材料与应用工程技术中心, 副主任

教授课程

半导体照明技术
宽禁带半导体材料与器件

专利与奖励

   
奖励信息
(1) 高光效长寿命半导体照明关键技术与产业化, 一等奖, 国家级, 2019
(2) 中国优秀专利奖, , 专项, 2014
(3) 低热阻高光效蓝宝石基GaN LED材料外延及芯片技术, 二等奖, 国家级, 2014
(4) 高性能大功率LEDs外延、芯片及应用集成技术, 一等奖, 省级, 2012
专利成果
( 1 ) 采用全光学膜体系的垂直结构发光二极管制作方法, 2010, 第 1 作者, 专利号: ZL.200710119474.8
( 2 ) 栅极调制正装结构GaN发光二极管的器件结构及制备方法, 2012, 第 3 作者, 专利号: ZL.201010534622.4
( 3 ) 栅极调制垂直结构GaN基发光二极管的器件结构及制备方法, 2012, 第 3 作者, 专利号: ZL.201010534772.5
( 4 ) 一种氮化镓基垂直结构发光二极管隐形电极的制作方法, 2012, 第 4 作者, 专利号: ZL.201110152869.4
( 5 ) 高提取效率氮化镓发光二极管的制作方法, 2012, 第 4 作者, 专利号: ZL.201010534588.0
( 6 ) 氮化镓基垂直结构发光二极管转移衬底的腐蚀方法, 2012, 第 4 作者, 专利号: ZL.201010251509.5
( 7 ) 氮化镓基垂直结构发光二极管转移衬底的二次电镀方法, 2012, 第 4 作者, 专利号: ZL.201010251510.8
( 8 ) GaN基薄膜芯片的制造方法, 2014, 第 3 作者, 专利号: ZL.201110430261.3
( 9 ) 制备氮化镓绿光发光二极管外延结构的方法, 2014, 第 3 作者, 专利号: ZL.201210093564.5
( 10 ) 高出光率倒装结构LED的制作方法, 2015, 第 3 作者, 专利号: ZL.201210548494.8
( 11 ) 自支撑氮化镓衬底制作方法, 2014, 第 2 作者, 专利号: ZL.201110134149.5
( 12 ) 纳米无荧光粉氮化镓白光发光二极管的制作方法, 2014, 第 3 作者, 专利号: ZL.201210093601.2
( 13 ) 制作纳米级柱形阵列氮化镓基正装结构发光二级管的方法, 2015, 第 4 作者, 专利号: ZL.201210436128.3
( 14 ) 半导体发光器件及其制造方法, 2015, 第 2 作者, 专利号: ZL.201210375368.7
( 15 ) Packaging structure of light emitting diode and method of manufacture the same, 2016, 第 3 作者, 专利号: US9246052B2
( 16 ) 一种芯片尺寸级氮化镓基晶体管及其制备方法, 2016, 第 5 作者, 专利号: 201410153249.6
( 17 ) 无线能量传输发光系统及其芯片级发光装置的制备方法, 2016, 第 4 作者, 专利号: 201410758310.X
( 18 ) 柔性发光器件阵列及其制作方法, 2017, 第 4 作者, 专利号: 201510016315.X
( 19 ) 柔性发光器件及其制备方法、发光装置, 2016, 第 2 作者, 专利号: 201610467039.3
( 20 ) 采用变温PL谱获取半导体材料杂质电离能的无损测量方法, 2017, 第 2 作者, 专利号: 201710122157.5
( 21 ) 在MOCVD中测量半导体薄膜杂质电离能的无损测量方法, 2017, 第 3 作者, 专利号: 201710122173.4
( 22 ) 无衬底GaN基LED单颗晶粒及其制备方法, 2017, 第 1 作者, 专利号: 201710148171.2
( 23 ) 完全植入式光学医疗器械, 2017, 第 1 作者, 专利号: 201710158704.5
( 24 ) 光刺激及信号采集探针, 2017, 第 2 作者, 专利号: 201710158896.X
( 25 ) 一种用于LED的晶圆级封装的芯片转移方法, 2017, 第 4 作者, 专利号: 201310712946.6
( 26 ) 采用复合透明导电层的发光二极管及其制备方法, 2017, 第 2 作者, 专利号: 201310750549.8
( 27 ) 电容式结构的发光二极管集成芯片及其制备方法, 2017, 第 5 作者, 专利号: 201410817479.8
( 28 ) 一种匀化白光光源及其匀化方法, 2017, 第 1 作者, 专利号: 201710094643.0
( 29 ) 一种催化CVD法自生长石墨烯透明导电薄膜的方法, 2017, 第 4 作者, 专利号: 201710247244.3
( 30 ) 一种微LED器件阵列单元的制作方法, 2017, 第 2 作者, 专利号: 201710520669.7
( 31 ) 一种氮化镓系发光器件, 2018, 第 5 作者, 专利号: IB132197F
( 32 ) 柔性发光器件及其制备方法、发光装置, 2018, 第 2 作者, 专利号: 201610467039.3
( 33 ) ZnO/GaN异质结纳米线光开关及其制备方法, 2018, 第 3 作者, 专利号: 201811065138.4
( 34 ) 一种无线供能的柔性发光系统及其制备方法, 2018, 第 1 作者, 专利号: 201811255896.2
( 35 ) 一种基于非晶衬底的氮化物薄膜结构及其制备方法, 2019, 第 1 作者, 专利号: 201910201508.0
( 36 ) LED/ZnO纳米线阵列集成的光电晶体管芯片及制备方法, 2019, 第 1 作者, 专利号: 201910297009.6
( 37 ) 一种低热阻电路板, 2019, 第 3 作者, 专利号: 201910681460.8
( 38 ) Method of aligning quadrate wafer in first photolithography process, 2019, 第 5 作者, 专利号: 14853966.1 -1211
( 39 ) 一种匀化白光光源及其匀化方法, 2020, 第 1 作者, 专利号: 201710094643.0
( 40 ) 采用石墨烯缓冲层机械剥离的垂直腔面发射激光器及其制备方法, 2020, 第 1 作者, 专利号: IB203278

出版信息

   
发表论文
(1) Multiplexing multifoci optical metasurfaces for information encoding in the ultraviolet spectrum, Applied Optics, 2021, 其他(合作组作者)
(2) Circularly polarized light emission from a GaN micro-LED integrated with functional metasurfaces for 3D display, Optics Letter, 2021, 通讯作者
(3) Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer, Photonics Research, 2021, 通讯作者
(4) Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films, Small, 2021, 通讯作者
(5) Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array, Crystals, 2021, 通讯作者
(6) Investigations about Al and Cu-Based Planar Spiral Inductors on Sapphire for GaN-Based RF Applications, Applied Sciences, 2021, 通讯作者
(7) Size-Dependent Quantum Efficiency of Flip-Chip Light-Emitting Diodes at High Current Injection Conditions, Photonics, 2021, 其他(合作组作者)
(8) A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heate, Journal of Materials Chemistry C, 2020, 通讯作者
(9) Systematic study of vertically aligned ZnO nanowire arrays synthesized on p-GaN, Japanese Journal of Applied Physics, 2020, 通讯作者
(10) Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN, Applied Surface Science, 2020, 通讯作者
(11) Phosphor-free single chip GaN-based white light emitting diodes with a moderate color rendering index and significantly enhanced communications bandwidth, Photonics Research, 2020, 通讯作者
(12) van der walls epitaxy of III-Nitrides and its applications, materials, 2020, 通讯作者
(13) GaN based LEDs Grown on Graphene-coverd SiO2/Si(100), Crystals, 2020, 通讯作者
(14) III-V族化合物的范德华外延生长与应用, 发光学报, 2020, 通讯作者
(15) Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition, Nanomaterials, 2020, 第 4 作者
(16) AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene as a Buffer Layer, Crystal Growth & Design, 2019, 通讯作者
(17) Fabrication of InGaN/GaN nanotube based photoanode using nanoimprint lithography and secondary sputtering process for water splitting, Japanese Journal of Applied Physics, 2019, 通讯作者
(18) 共晶焊倒装高压 LED 的制备及性能分析, 照明工程学报, 2019, 第 5 作者
(19) Systematic study of vertically aligned ZnO nanowire arrays synthesized on p-GaN substrate by hydrothermal method, JJAP, 2019, 通讯作者
(20) Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater, Optics Express, 2019, 第 5 作者
(21) Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating, Applied Physics Express, 2019, 第 5 作者
(22) Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence, nanotechnology, 2018, 通讯作者
(23) InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer, OPTICAL MATERIALS EXPRESS, 2018, 其他(合作组作者)
(24) Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire., Journal of the American Chemical Society, 2018, 其他(合作组作者)
(25) 400 V Normally-off Recessed MOS-Gate AlGaN/GaN HEMT with High Threshold Voltage and Ultra-Low Gate-Leakage Current, TRANSACTIONS OF CHINA ELECTROTECHNICAL SOCIETY, 2018, 其他(合作组作者)
(26) UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate, Journal of Nanophotonics, 2018, 其他(合作组作者)
(27) Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes, Semiconductor Science and Technology, 2018, 其他(合作组作者)
(28) Ultrafast Growth of Horizontal GaN Nanowires by HVPE through Flipping the Substrate, Nanoscale, 2018, 通讯作者
(29) Crystallographic orientation control and optical properties of GaN nanowires, RSC Advances, 2018, 通讯作者
(30) Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography, Nanoscale, 2017, 通讯作者
(31) Optically pumped lasing with a Q-factor exceeding 6000 from wet-etched GaN micro-pyramids, Optics Letters, 2017, 通讯作者
(32) Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate, IEEE Photonics Journal, 2017, 第 6 作者
(33) Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film, Japanese Journal of Applied Physics, 2017, 第 10 作者
(34) Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy, Journal of Applied Physics, 2017, 通讯作者
(35) Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots, SCIENTIFIC REPORTS, 2016, 第 7 作者
(36) Electroless Silver Plating Reflectors to Boost the Performance of Vertical Light-Emitting Diodes, IEEE PHOTONICS JOURNAL, 2016, 通讯作者
(37) Carrier leakage e ect on e ciency droop in InGaN/GaN light-emitting diodes, Modern Physics Letters B, 2016, 通讯作者
(38) Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band, IEEE Photonics Journal, 2016, 通讯作者
(39) Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides, SCIENTIFIC REPORTS, 2016, 第 3 作者
(40) Interface and photoluminescence characteristics of graphene-(GaN/InGaN)nmultiple quantum wells hybrid structure, JOURNAL OF APPLIED PHYSICS, 2016, 第 5 作者
(41) Analysis of symmetry breaking configurations in metal nanocavities: Identification of resonances for generating high-order magnetic modes and multiple tunable magnetic-electric Fano resonances, JOURNAL OF APPLIED PHYSICS, 2016, 第 3 作者
(42) High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical Route, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 第 4 作者
(43) Direct growth of graphene on gallium nitride using C2H2 as carbon source, Frontiers of Physics, 2016, 第 3 作者
(44) Overshoot Effects of Electron on Efficiency Droop in InGaN/GaN MQW Light-Emitting Diodes, AIP Advances, 2016, 第 3 作者
(45) Enhancing the performance of blue GaN-based light emitting diodes with carrier concentration adjusting layer, AIP Advances, 2016, 通讯作者
(46) Co-doping of magnesium with indium in nitrides: first principle calculation and experiment, RSC Advances, 2016, 第 3 作者
(47) Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides, Scientific Report, 2016, 第 2 作者
(48) Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes, ACS APPLIED MATERIALS & INTERFACES, 2015, 第 4 作者
(49) Enhancing the performance of blue GaN-based light emitting diodes with doubleelectron blocking layers, AIP ADVANCES, 2015, 通讯作者
(50) Transparent graphene interconnects for monolithic integration of GaN-based LEDs, Applied Physics Express, 2015, 通讯作者
(51) A subversive innovation on GaN P-type reflective electrode using electroless silver plating, Solid State Lighting (SSLCHINA), 2015 12th China International Forum on, 2015, 通讯作者
(52) Light extraction improvement of blue light-emitting diodes with a Metal-distributed Bragg reflector current blocking layer, Appl. Phys. A, 2015, 通讯作者
(53) Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes, Materials Science in Semiconductor Processing, 2014, 通讯作者
(54) In Situ Fabrication of Bendable Microscale Hexagonal Pyramids Array Vertical Light Emitting Diodes with Graphene as Stretchable Electrical Interconnects, ACS Photonics, 2014, 通讯作者
(55) Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage , J. Phys. D: Appl. Phys., 2014, 通讯作者
(56) Two distinct carrier localization in green light-emitting diodes with InGaN-GaN multiple quantum wells, Journal of Applied Physics, 2014, 通讯作者
(57) Effects of light extraction efficiency to the efficiency droop of InGaN-based, Journal of Applied Physics , 2013, 通讯作者
(58) Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching , Optics Express, 2013, 通讯作者
(59)  GaN-Based Light Emitting Diodes with Hybrid Micro-Nano Patterned Sapphire Substrate, ECS Solid State Letters, 2013, 通讯作者
(60) Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping, RSC Advances, 2013, 通讯作者
(61)  Improved light output from InGaN LEDs by laser-induced dumbbell-like air-voids, Optics Express, 2013, 通讯作者
(62) Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices,  RSC advances, 2013, 通讯作者
(63) N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array, Journal of Applied Physics, 2013, 通讯作者
(64) Interface and transport properties of metallization contacts to flat and wet-etching roughed Npolar n type GaN, ACS Applied Materials Interfaces, 2013, 通讯作者
(65) InGaN-based vertical light emitting diodes withHNO3 modified-graphenetransparent conductive layer and high reflective membrane current blocking layer, Proceedings of Royal Society A, 2013, 通讯作者
(66) Interface and transport properties of GaN/graphene junction in GaN-based LEDs, J. Phys. D: Appl. Phys., 2012, 通讯作者
(67) Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes, Optics Express , 2012, 通讯作者
发表著作
( 1 ) III族氮化物材料器件与纳米结构, III- Nitride materials devices and nano-structures, World Scientific, 2017-07, 第 3 作者
Light-Emitting Diodes:Materials,Processes,Devices and Applications, Springer, 2019-01, 第 5 作者
III-Nitrides Light Emitting, Springer, 2020-09, 第 3 作者

科研活动

   
科研项目
( 1 ) 150lm/W的GaN基LED量子效率提升技术研究, 主持, 国家级, 2011-01--2013-12
( 2 ) 微纳金字塔垂直结构LED量子效率研究, 主持, 国家级, 2014-01--2016-12
( 3 ) 大尺寸硅衬底氮化镓基电力电子材料生长技术研究, 主持, 国家级, 2014-01--2016-12
( 4 ) LED光源的生物相关理论问题及示范应用, 主持, 部委级, 2013-10--2016-12
( 5 ) GaN基垂直腔面发射激光器基础研究, 参与, 国家级, 2016-01--2019-12
( 6 ) 超高能效半导体光源核心材料及器件技术研究, 主持, 国家级, 2017-07--2021-06
( 7 ) 超高能效LED芯片光子耦合机制与提取效率提升技术研究, 主持, 国家级, 2017-07--2021-06
参与会议
(1)GaN nanowire ultraviolet detector with high responsivity   2020-11-24
(2)Recent Advances in Ultra-high Efficiency InGaN-based LEDs   第十六届中国国际半导体照明论坛   2019-11-25
(3)GaN nanowire grown on SiO2/Si using graphene as a buffer layer   2018-11-12
(4)芯片、器件及封装技术分会委员   第十五届中国国际半导体照明论坛   2018-10-24
(5)controllable growth and device application of nitrites nonovires   第十四届中国国际半导体照明论坛   2017-11-01
(6)芯片、器件及其封装技术分会委员   第十三届中国国际半导体照明论坛   2016-11-15
(7)芯片、器件及其封装技术分会主席   第十二届中国国际半导体照明论坛   2015-11-02