080502-材料学
085204-材料工程

宽禁带半导体材料与器件
稀磁半导体薄膜与自旋电子器件
新型超宽禁带半导体晶体

2003-09--2008-06   中国科学院上海硅酸盐研究所   获博士学位
1999-09--2003-07   同济大学   获学士学位

   

2010-09~现在, 中国科学院上海硅酸盐研究所, 副研究员、研究员
2008-09~2010-08,The University of Warwick, Research Fellow
2008-06~2008-08,上海集成电路研发中心, 工程师

   

（1） 上海市青年启明星, , 市地级, 2013
（2） 上海硅酸盐研究所先进个人, , 研究所（学校）, 2012
（3） 上海硅酸盐研究所青年才俊, , 研究所（学校）, 2012
（4） 上海市嘉定区青年领军人才, , 市地级, 2012
（5） 中科院上海硅酸盐所“****”人才, 院级, 2010
（6） 严东生奖学金, 特等奖, 研究所（学校）, 2008
（7） 上海-AM研究与发展基金奖学金, , 市地级, 2006

[1] 卓世异, 刘学超, 严成锋, 忻隽, 孔海宽, 施尔畏. 晶体生长用籽晶下置式装置. CN: CN110904501B, 2022-03-29.
[2] 卓世异, 刘学超, 严成锋, 施尔畏. 分步生长弱磁性Fe-V共掺杂SiC晶体的方法. CN: CN110699752B, 2022-03-22.
[3] 张明辉, 刘希曼, 刘学超, 潘秀红, 陈锟, 邓伟杰. 一种高密度高阿贝数的近红外发光玻璃. CN: CN112028479B, 2021-05-25.
[4] 张明辉, 谢坚生, 刘学超, 陈锟, 潘秀红, 邓伟杰, 汤美波, 盖立君. 一种低声子能量、宽带高透过率镓酸镧基玻璃. CN: CN112608024A, 2021-04-06.
[5] 张明辉, 谢坚生, 刘学超, 陈锟, 邓伟杰, 潘秀红. 一种超宽加工温度区间的近红外发光重金属氧化物玻璃材料. CN: CN112429965A, 2021-03-02.
[6] 高攀, 忻隽, 孔海宽, 刘学超, 施尔畏. 一种晶体生长装置及晶体生长方法. CN: CN110306238A, 2019-10-08.
[7] 高攀, 忻隽, 孔海宽, 刘学超, 施尔畏. 一种晶体原位碳化退火装置及方法. CN: CN110284199A, 2019-09-27.
[8] 高攀, 忻隽, 孔海宽, 严成锋, 郑燕青, 刘学超, 施尔畏. 一种碳化硅晶体生长过程中调节和旋转坩埚的装置及方法. CN: CN108796610A, 2018-11-13.
[9] 高攀, 王乐星, 忻隽, 刘学超, 郑燕青, 施尔畏. 晶体生长用坩埚以及释放碳化硅晶体热应力的方法. CN: CN108149315A, 2018-06-12.
[10] 高攀, 忻隽, 陈辉, 刘学超, 施尔畏. 一种实时观测调控碳化硅晶体生长过程中的温度的方法及其保温设备. CN: CN108103576A, 2018-06-01.
[11] 高攀, 陈辉, 孔海宽, 刘学超, 施尔畏. 一种采用物理气相沉积技术生长大尺寸碳化硅晶体的方法. CN: CN108048911A, 2018-05-18.
[12] 卓世异, 刘学超, 严成锋, 黄维, 陈卫宾, 孔海宽, 施尔畏. 微米级厚度晶片承载台. CN: CN108039334A, 2018-05-15.
[13] 高攀, 忻隽, 陈辉, 刘学超, 郑燕青, 施尔畏. 一种大尺寸电阻率可调的碳化硅多晶陶瓷的生长方法. CN: CN107190322A, 2017-09-22.
[14] 高攀, 严成锋, 忻隽, 孔海宽, 刘学超, 施尔畏. 高质量碳化硅晶体生长用斜籽晶托以及生长装置. CN: CN206328494U, 2017-07-14.
[15] 刘学超, 陈卫宾, 卓世异, 施尔畏. 一种Ar粒子辐照增强Cr掺杂ZnO薄膜铁磁性的方法. CN: CN106920623A, 2017-07-04.
[16] 刘学超, 王华杰, 孔海宽, 忻隽, 高攀, 施尔畏. 一种具有六棱柱状氮化铝晶须的制备方法. CN: CN106801258A, 2017-06-06.
[17] 高攀, 严成锋, 忻隽, 孔海宽, 刘学超, 施尔畏. 高质量碳化硅晶体生长用斜籽晶托以及生长高质量碳化硅晶体的方法. CN: CN106400116A, 2017-02-15.
[18] 刘学超, 王华杰, 孔海宽, 忻隽, 高攀, 施尔畏. 一种基于气相生长原理制备多孔氮化铝的方法. CN: CN106191998A, 2016-12-07.
[19] 卓世异, 黄维, 王乐星, 陈辉, 庄击勇, 刘学超, 施尔畏. 气囊式晶片粘结助压手柄. CN: CN205237802U, 2016-05-18.
[20] 周仁伟, 刘学超, 郑燕青, 施尔畏. 一种SiC基稀磁半导体薄膜及其制备方法. CN: CN105551794A, 2016-05-04.
[21] 卓世异, 黄维, 王乐星, 陈辉, 庄击勇, 刘学超, 施尔畏. 气囊式晶片粘结助压手柄. CN: CN105479327A, 2016-04-13.
[22] 陈卫宾, 刘学超, 卓世异, 施尔畏, 孔海宽. 一种增强ZnO基稀磁半导体薄膜室温铁磁性的方法. CN: CN105161288A, 2015-12-16.
[23] 卓世异, 刘学超, 陈卫宾, 施尔畏, 孔海宽. 具有室温铁磁性Cu掺杂ZnO纳米柱状晶薄膜及其制备方法. CN: CN105154826A, 2015-12-16.
[24] 卓世异, 刘学超, 熊泽, 孔海宽, 黄维, 施尔畏. 改进型卧式球磨机. CN: CN203235523U, 2013-10-16.
[25] 高攀, 刘熙, 严成锋, 忻隽, 孔海宽, 刘学超, 郑燕青, 施尔畏. 大尺寸15R 碳化硅晶体的制备方法. CN: CN103320851A, 2013-09-25.
[26] 朱明星, 石彪, 陈义, 刘学超, 杨建华, 施尔畏. 碳化硅化学气相外延载物台装置. CN: CN103173737A, 2013-06-26.
[27] 常少辉, 黄维, 刘学超, 杨建华, 施尔畏. 正对电极结构、SiC光导开关及其它们的制造方法. CN: CN103178131A, 2013-06-26.
[28] 黄维, 常少辉, 刘学超, 王乐星, 庄击勇, 陈辉, 施尔畏. 高耐压、低导通电阻的光电导开关及其制造方法. CN: CN103022220A, 2013-04-03.
[29] 熊泽, 刘学超, 卓世异, 孔海宽, 杨建华, 施尔畏. 具有内禀铁磁性的ZnO基稀磁半导体薄膜及其制备方法. CN: CN102676994A, 2012-09-19.
[30] 刘学超, 陈之战, 施尔畏. 一种弛豫SiGe虚拟衬底及其制备方法. CN: CN102315246A, 2012-01-11.
[31] 刘学超, 陈之战, 宋力昕, 施尔畏. 一种Al掺杂的氧化锌透明导电薄膜的制备方法. CN: CN102312201A, 2012-01-11.
[32] 刘学超, 陈之战, 杨建华, 施尔畏. 一种具有内禀铁磁性ZnO基稀磁半导体薄膜及其制备方法. CN: CN102270737A, 2011-12-07.
[33] 刘学超, 杨建华, 施尔畏. 一种高质量应变的Ge/SiGe超晶格结构及其制备方法. CN: CN102162137A, 2011-08-24.
[34] 刘学超, 施尔畏, 陈之战, 张华伟, 范秋林, 宋力昕. 电磁场约束电感耦合溅射制备ZnO基稀磁半导体薄膜的方法. CN: CN100524623C, 2009-08-05.
[35] 刘学超, 施尔畏, 陈之战, 张华伟, 肖 兵, 宋力昕. 溶胶－凝胶法制备高温铁磁性的ZnO:( Co,Al)纳米材料的方法. CN: CN1948221A, 2007-04-18.
[36] 刘学超, 施尔畏, 陈之战, 张华伟, 范秋林, 宋力昕. 利用电磁场约束电感耦合等离子体溅射沉积法制备ZnO基稀磁半导体薄膜. CN: CN1929091A, 2007-03-14.

   

[1] Tang, M B, Liu, X C, Zhang, M H, Pan, X H. Scaling behavior of non-volume-dependent heat capacity in solids. SOLID STATE COMMUNICATIONS[J]. 2022, 341: http://dx.doi.org/10.1016/j.ssc.2021.114581.
[2] Hao, Ziqiang, Liu, Xuechao, Zhu, Xinfeng, Zhang, Minghui, Tang, Meibo, Pan, Xiuhong. Growth and characterization of uniformly distributed triangular single-crystalline hexagonal boron nitride grains on liquid copper surface. MATERIALS RESEARCH EXPRESS[J]. 2022, 9(4): http://dx.doi.org/10.1088/2053-1591/ac65e0.
[3] 沈自才, 高鸿, 樊艳艳, 闫继娜, 于云, 刘学超, 王胭脂, 代巍. 航天材料飞行试验进展及发展方向. 材料导报[J]. 2022, 36(22): 51-58, http://lib.cqvip.com/Qikan/Article/Detail?id=7108379448.
[4] 綦正超, 许庭翔, 刘学超, 王丁. 杂质和缺陷对SiC单晶导热性能的影响. 人工晶体学报[J]. 2021, 50(5): 816-824, http://lib.cqvip.com/Qikan/Article/Detail?id=7104799329.
[5] Xu Tongzhou, Pan Xiuhong, Zhang Minghui, Tang Meibo, Li Huidong, Liu Xuechao. In-situ Observation of Shrinkage Formation and Its Mechanism During Ni-based CMSX-4 Superalloy Solidification. RARE METAL MATERIALS AND ENGINEERING[J]. 2021, 50(4): 1113-1117, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000651535100001.
[6] 向军淮, 柳明凤, 潘秀红, 张明辉, 刘学超. La–Ho掺杂对BiFeO_（3）组织结构形成的影响. 硅酸盐学报[J]. 2021, 49(3): 469-475, http://lib.cqvip.com/Qikan/Article/Detail?id=7104495626.
[7] Xie, Jiansheng, Zhang, Minghui, Guo, Rongting, Shi, Ying, Liu, Xuechao, Pan, Xiuhong, Chen, Kun, Deng, Weijie. Investigation of optical and thermal properties in Er3+-doped Ga2O3-La2O3-Ta2O5 glasses fabricated by containerless solidification. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 872: http://dx.doi.org/10.1016/j.jallcom.2021.159651.
[8] Liu, Ximan, Zhang, Minghui, Guo, Rui, Liu, Xuechao, Pan, Xiuhong, Chen, Kun, Deng, Weijie. Optical properties and luminescence of Er3+/Yb3+ co-doped La2O3-Nb2O5-Ga2O3 glasses prepared by aerodynamic levitation method. OPTICAL MATERIALS[J]. 2020, 109: http://dx.doi.org/10.1016/j.optmat.2020.110288.
[9] Xu, Tingxiang, Liu, Xuechao, Zhuo, Shiyi, Huang, Wei, Gao, Pan, Xin, Jun, Shi, Erwei. Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC. JOURNALOFCRYSTALGROWTH[J]. 2020, 531: http://dx.doi.org/10.1016/j.jcrysgro.2019.125399.
[10] Tang, Meibo, Liu, Xuechao, Zhang, Minghui, Pan, Xiuhong, Wen, Haiqin. Model of Heat Capacity in Volume Dimension. JOURNAL OF PHYSICAL CHEMISTRY A[J]. 2020, 124(29): 6119-6123, http://dx.doi.org/10.1021/acs.jpca.0c05729.
[11] Han, WeiWei, Huang, Wei, Zhuo, ShiYi, Xin, Jun, Liu, XueChao, Shi, ErWei, Zhang, YueFan, Cao, PengHui, Wang, YuTian, Guo, Hui, Zhang, YuMing. A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(2): 271-274, https://www.webofscience.com/wos/woscc/full-record/WOS:000457606300029.
[12] Xue-Chao Liu. Photoluminescence adjustment by B, Al, and N ternary dopants in fluorescent 4H-SiC single crystals. Chine Physics B. 2019, [13] Zhuo, ShiYi, Liu, XueChao, Huang, Wei, Kong, HaiKuan, Xin, Jun, Shi, ErWei. Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants. CHINESE PHYSICS B[J]. 2019, 28(1): http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574849485454.
[14] 卓世异, 刘学超, 黄维, 孔海宽, 忻隽, 施尔畏. Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B,Al,and N ternary dopants. 中国物理B:英文版[J]. 2019, 532-536, http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574849485454.
[15] Gao, Pan, Xin, Jun, Liu, Xuechao, Zheng, Yanqing, Shi, Erwei. Control of 4H polytype of SiC crystals by moving up the crucible to adjust the temperature field of the growth interface. CRYSTENGCOMM[J]. 2019, 21(45): 6964-6968, [16] Xue-Chao Liu. Electrical property study of Ni/Nb contact to n-type 4H-SiC. Material Science Forum. 2018, [17] Zhuo, ShiYi, Liu, XueChao, Huang, Wei, Xu, TingXiang, Han, WeiWei, Yan, ChengFeng, Shi, ErWei. Photoluminescence properties of N and B codoped fluorescent 4H-SiC and 6H-SiC single crystals. AIP ADVANCES[J]. 2018, 8(12): https://doaj.org/article/e9b06d4574214bdf886f2be112fe7771.
[18] Xue-Chao Liu. Influence of proton irradiation on defect and magnetism of Yb-doped ZnO diluted magnetic semiconductor thin films. Journal of Inorganic Materials. 2018, [19] Chen WeiBin, Liu XueChao, Zhuo ShiYi, Chai Jun, Shi ErWei. Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films. JOURNAL OF INORGANIC MATERIALS[J]. 2018, 33(8): 903-908, http://ir.sic.ac.cn/handle/331005/24727.
[20] Zhuo, ShiYi, Liu, XueChao, Xu, TingXiang, Yan, ChengFeng, Shi, ErWei. Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC. AIP ADVANCES[J]. 2018, 8(7): http://ir.sic.ac.cn/handle/331005/24831.
[21] Chen WeiBin, Liu XueChao, Zhuo ShiYi, Chai Jun, Shi ErWei. Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films. JOURNAL OF INORGANIC MATERIALS[J]. 2018, 33(8): 903-908, http://ir.sic.ac.cn/handle/331005/24727.
[22] Wang, Hua-Jie, Liu, Xue-Chao, Kong, Hai-Kuan, Xin, Jun, Gao, Pan, Zhuo, Shi-Yi, Shi, Er-Wei. Growth of hexagonal AlN crystalline microrod by physical vapor transport method. WUJI CAILIAO XUEBAO/JOURNAL OF INORGANIC MATERIALS[J]. 2017, 32(2): 215-218, http://ir.sic.ac.cn/handle/331005/25575.
[23] 高攀, 忻隽, 严成锋, 黄维, 刘学超, 施尔畏. 固态照明中SiC衬底材料产业化关键问题的研究. 中国照明电器[J]. 2017, 1-6, http://lib.cqvip.com/Qikan/Article/Detail?id=674265005.
[24] Wang HuaJie, Liu XueChao, Kong HaiKuan, Xin Jun, Gao Pan, Zhuo ShiYi, Shi ErWei. Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method. JOURNAL OF INORGANIC MATERIALS[J]. 2017, 32(2): 215-218, http://ir.sic.ac.cn/handle/331005/23717.
[25] Ren-Wei Zhou, Xue-Chao Liu, Hui-Jun Guo, Hai-Kuan Kong, Er-Wei Shi. Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates. Materials Science Forum[J]. 2016, 858: 225-228, [26] Er-Wei Shi. Study of ehrlich-schwoebel barrier in 4H-SiC epitaxial growth by molecular statics method. Material Science Forum. 2016, [27] Wang, HuaJie, Liu, XueChao, Kong, HaiKuan, Xin, Jun, Gao, Pan, Shi, ErWei. Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle. JOURNAL OF ELECTRONIC MATERIALS[J]. 2016, 45(7): 3263-3267, http://ir.sic.ac.cn/handle/331005/23003.
[28] Er-Wei Shi. Competitive lattice model Monte Carlo method for simulation of competitive growth of different polytypes in SiC single crystal. Material Science Forum. 2016, [29] Zhou TianYu, Liu XueChao, Huang Wei, Zhuo ShiYi, Zheng YanQing, Shi ErWei. Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC. CHINESE PHYSICS B[J]. 2015, 24(12): http://ir.sic.ac.cn/handle/331005/23329.
[30] Zhuo Shiyi, Liu Xi, Liu Xuechao, Shi Erwei. Recent progress in research of f-SiC codoped with N-B-Al pairs for optoelectronics. JOURNAL OF SEMICONDUCTORS[J]. 2015, 36(8): 083003-1, http://ir.sic.ac.cn/handle/331005/8752.
[31] Chen, WeiBin, Liu, XueChao, Li, Fei, Chen, HongMing, Zhou, RenWei, Shi, ErWei. Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films. AIP ADVANCES[J]. 2015, 5(6): https://doaj.org/article/bc710816dc20466facb83c3485bd6406.
[32] Guo, HuiJun, Huang, Wei, Liu, Xi, Gao, Pan, Zhuo, ShiYi, Xin, Jun, Yan, ChengFeng, Liu, XueChao, Zheng, YanQing, Yang, JianHua, Shi, ErWei. A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide. COMPUTATIONAL MATERIALS SCIENCE[J]. 2015, 100(Pt.B): 159-165, http://dx.doi.org/10.1016/j.commatsci.2014.11.056.
[33] Zhou, RenWei, Liu, XueChao, Li, Fei, Shi, ErWei. Defects induced ferromagnetism in hydrogen irradiated 3C-SiC thin films. MATERIALS LETTERS[J]. 2015, 156: 54-57, http://dx.doi.org/10.1016/j.matlet.2015.04.143.
[34] Zhou TianYu, Liu XueChao, Huang Wei, Dai ChongChong, Zheng YanQing, Shi ErWei. Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches. CHINESE PHYSICS B[J]. 2015, 24(4): http://www.corc.org.cn/handle/1471x/2376526.
[35] 周仁伟, 刘学超, 卓世异, 陈鸿铭, 石彪, 施尔畏. Divacancies induced ferromagnetism in 3C-SiC thin ?lms,. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS[J]. 2015, 559-, http://ir.sic.ac.cn/handle/331005/8750.
[36] Zhou, RenWei, Liu, XueChao, Wang, HuaJie, Chen, WeiBin, Li, Fei, Zhuo, ShiYi, Shi, ErWei. Ferromagnetism in proton irradiated 4H-SiC single crystal. AIPADVANCES[J]. 2015, 5(4): https://doaj.org/article/0e58bb0ad6d44cda944e9cbb92a8d282.
[37] Zhou Tianyu, Liu Xuechao, Huang Wei, Dai Chongchong, Zheng Yanqing, Shi Erwei. Application of an Al doped zinc oxide subcontact layer on the vanadium compensated 6H-SiC photoconductive switches. CHINESE PHYSICS B[J]. 2015, 24(4): 044209-1, http://ir.sic.ac.cn/handle/331005/8749.
[38] Zhou, RenWei, Liu, XueChao, Zhuo, ShiYi, Chen, HongMing, Shi, Biao, Shi, ErWei. Divacancies induced ferromagnetism in 3C-SiC thin films. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS[J]. 2015, 374: 559-563, http://dx.doi.org/10.1016/j.jmmm.2014.08.081.
[39] Zhou, TianYu, Liu, XueChao, Dai, ChongChong, Huang, Wei, Zhuo, ShiYi, Shi, ErWei. Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS[J]. 2014, 188: 59-65, http://dx.doi.org/10.1016/j.mseb.2014.06.008.
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[110] Zhang, HuaWei, Shi, ErWei, Chen, ZhiZhan, Liu, XueChao, Xiao, Bing. Absence of intrinsic ferromagnetism in Zn1-xMnxO alloys. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2006, 18(39): L477-L483, http://ir.sic.ac.cn/handle/331005/2173.
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[113] Chen, ZhiZhan, Shi, ErWei, Zhang, HuaWei, Zhang, Yong, Li, XiangBiao, Liu, XueChao, Xiao, Bing. Hydrothermal synthesis of magnesium aluminate platelets. JOURNAL OF THE AMERICAN CERAMIC SOCIETY[J]. 2006, 89(12): 3635-3637, https://www.webofscience.com/wos/woscc/full-record/WOS:000242232100006.
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（ 1 ） 氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究, 主持, 国家级, 2011-01--2013-12
（ 2 ） 高性能碳化硅光导开关制作与应用研究, 主持, 部委级, 2011-01--2014-12
（ 3 ） XX材料制备, 主持, 部委级, 2012-06--2014-12
（ 4 ） 第三代宽禁带半导体SiC衬底与外延制备技术开发, 参与, 省级, 2011-09--2013-08
（ 5 ） 双室结构型SiC单晶生长炉研制与工艺开发, 参与, 国家级, 2009-01--2013-12
（ 6 ） 非磁性离子掺杂ZnO薄膜制备与电磁输运研究, 主持, 省级, 2013-07--2015-06
（ 7 ） 大功率GaN器件用大尺寸SiC衬底制备及外延技术研究, 主持, 国家级, 2014-01--2016-12
（ 8 ） 新型高功率纳米器件关键材料, 主持, 部委级, 2015-01--2017-12
（ 9 ） 大尺寸低缺陷低电阻率碳化硅单晶制备技术研究, 主持, 国家级, 2016-07--2021-06
（ 10 ） 高纯SiC衬底制备与离子束剥离研究, 主持, 省级, 2017-07--2020-06

（1）SiC晶体制备和晶圆片加工   第一届长三角第三代半导体暨新材料产业发展论坛   2019-03-30
（2）Effect of argon ion irradiation on the defect and properties of semi- insulating 4H-SiC   碳化硅及相关材料欧洲会议   2018-09-02
（3）Irradiation effect on the point defects and properties of single crystal SiC   2018-07-09
（4）粒子辐照SiC薄膜与磁性研究   第十八届全国化合物半导体材料、微波器件和光电器件   刘学超、陈卫宾、卓世异、施尔畏   2017-12-18
（5）Electrical property study of Ni/Nb contact to n-type 4H-SiC   碳化硅及相关材料国际会议   刘学超、卓世异、陈卫宾、代冲冲、施尔畏   2017-09-17
（6）大尺寸碳化硅晶体缺陷研究及国内外进展   电子科学与信息技术创新发展全国博士后学术论文   刘学超   2016-08-23
（7）碳化硅晶体缺陷研究及大尺寸碳化硅晶体研究进展   第一届全国宽禁带半导体学术与应用技术会议   刘学超、忻隽、孔海宽、黄维、施尔畏   2015-10-30
（8）The electical properties of Ni/V contact to 4H-SiC   碳化硅及相关材料国际会议   刘学超、代冲冲、黄维、忻隽、孔海宽、施尔畏   2015-10-04
（9）宽禁带半导体碳化硅材料与应用进展   2014高端新型军民两用材料需求应用与展示交流会   刘学超、孔海宽、忻隽、施尔畏   2014-10-16
（10）Study of surface morphologies of on-axis 6H-SiC wafer after high-temperature etching and epitaxial growth   碳化硅及相关材料国际会议   刘学超、朱明星、黄维、忻隽、孔海宽、施尔畏   2013-09-28
（11）碳化硅半导体材料与器件产业发展与展望   中国电子材料行业协会半导体材料分会-蓝宝石和碳化硅晶体专业研讨会   刘学超、孔海宽、忻隽、严成锋、施尔畏   2013-09-09
（12）Growth and Characterization of Low Cost 6H-SiC Substrate for LED Application   Xiao Guo, Xue-Chao Liu, Hai-Kuan Kong, Jun Xin, Jian-Hua Yang, Er-Wei Shi   2012-11-05
（13）低偏角6H-SiC同质外延生长研究   第16届全国晶体生长与材料学术会议   刘学超、朱明星、石彪、忻隽、杨建华、施尔畏   2012-10-22
（14）宽禁带半导体SiC单晶衬底研究进展   2012全国半导体器件产业发展创新产品和新技术研讨会   刘学超、忻隽、孔海宽、刘熙、高攀、杨建华、施尔畏   2012-07-24
（15）Cr掺杂ZnO薄膜制备与磁性机理   第五届全国氧化锌学术会议   熊泽、刘学超、卓世异、杨建华、施尔畏   2011-11-05
（16）Effect of Surface Morphology on the On-state Resistance of SiC Photoconductive Semiconductor Switches   Xue-Chao Liu *, Wei Huang, Shao-Hui Chang, Ming-Xing Zhu, Jian-Hua Yang, Er-Wei Shi   2011-09-11
（17）高质量钒掺杂半绝缘碳化硅晶体及其在光导开关上的应用   2011全国半导体器件产业发展创新产品和新技术研讨会   刘学超，严成锋，黄维，杨建华，施尔畏   2011-08-04
（18）Growth and characterization of Ge/SiGe multiple quantum wells on relaxed Si0.2Ge0.8/Si (100) VS   Xue-Chao Liu, D. R. Leadley   2011-05-24

已指导学生

熊泽  硕士研究生  080502-材料学  

代冲冲  硕士研究生  085204-材料工程  

李飞  硕士研究生  085204-材料工程  

王华杰  硕士研究生  080502-材料学  

现指导学生

许庭翔  硕士研究生  080502-材料学