基本信息
于广辉 男 博导 中国科学院上海微系统与信息技术研究所
电子邮件： ghyu@mail.sim.ac.cn
通信地址： 上海市长宁路865号8号楼1203室
邮政编码： 2010050
电子邮件： ghyu@mail.sim.ac.cn
通信地址： 上海市长宁路865号8号楼1203室
邮政编码： 2010050
招生信息
招生专业
080903-微电子学与固体电子学
080903-微电子学与固体电子学
085400-电子信息
080903-微电子学与固体电子学
085400-电子信息
招生方向
石墨烯薄膜材料的制备与应用
过渡金属硫化物二维材料制备与应用
hBN二维薄膜材料制备与应用
过渡金属硫化物二维材料制备与应用
hBN二维薄膜材料制备与应用
教育背景
1996-09--1999-07 中国科学院长春光学精密机械与物理研究所 博士
1989-09--1996-07 吉林大学 学士、硕士
1989-09--1996-07 吉林大学 学士、硕士
学历
-- 研究生
学位
-- 博士
工作经历
工作简历
2008-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2002-04~2007-12,中国科学院上海微系统与信息技术研究所, 副研究员
1999-09~2002-03,日本千叶大学, 非常勤研究员（博士后）
2002-04~2007-12,中国科学院上海微系统与信息技术研究所, 副研究员
1999-09~2002-03,日本千叶大学, 非常勤研究员（博士后）
专利与奖励
专利成果
[1] 张燕辉, 于广辉, 肖润涵, 陈志蓥. 一种提高铜基合金衬底上多层石墨烯覆盖率的方法. CN: CN115505859A, 2022-12-23.
[2] 王爽, 于广辉, 张燕辉, 陈志蓥. MoX 2 /WX 2 横向异质结的制备方法. CN: CN114122194A, 2022-03-01.
[3] 康鹤, 于广辉, 张燕辉, 陈志蓥. 一种铂衬底上石墨烯的表征方法. CN: CN113866161A, 2021-12-31.
[4] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 梁逸俭, 胡诗珂, 李晶, 康鹤, 王爽. 一种反向转移石墨烯的方法. CN: CN111422860A, 2020-07-17.
[5] 张燕辉, 于广辉, 陈志蓥, 隋妍萍. 一种石墨薄膜的制备方法. CN: CN111072022A, 2020-04-28.
[6] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 梁逸俭, 胡诗珂, 李晶, 康鹤, 王爽. 一种改变双层石墨烯耦合性的方法及双层石墨烯. CN: CN110683533A, 2020-01-14.
[7] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 梁逸俭, 胡诗珂, 李晶, 康鹤, 王爽. 一种改变双层石墨烯耦合性的方法及双层石墨烯. CN: CN110683533B, 2023-04-07.
[8] 张燕辉, 于广辉, 陈志蓥, 隋妍萍. 铜晶须的制备方法. CN: CN108570710A, 2018-09-25.
[9] 张燕辉, 于广辉, 陈志蓥, 隋妍萍, 葛晓明, 邓荣轩, 梁逸俭, 胡诗珂. 一种石墨烯-玻璃及其制备方法. CN: CN108439812A, 2018-08-24.
[10] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 葛晓明, 胡诗珂, 梁逸俭. 一种提高石墨烯膜表面亲水性的方法. CN: CN106829943A, 2017-06-13.
[11] 张燕辉, 于广辉, 陈志蓥, 隋妍萍, 葛晓明, 邓荣轩, 梁逸俭, 胡诗珂. 一种石墨烯玻璃. CN: CN206317488U, 2017-07-11.
[12] 张燕辉, 于广辉, 隋妍萍, 陈志蓥, 邓荣轩, 葛晓明, 梁逸俭, 胡诗珂. 一种无粘连插层金属箔片堆垛制备石墨烯的方法. CN: CN106591798A, 2017-04-26.
[13] 于广辉, 张燕辉, 隋妍萍, 陈志蓥, 邓荣轩, 葛晓明, 梁逸俭, 胡诗珂. 一种无粘连金属密堆生长石墨烯的方法. CN: CN106756869A, 2017-05-31.
[14] 于广辉, 吴天如, 谢晓明, 时志远, 陈吉, 张燕辉, 隋妍萍, 陈志蓥. 一种过渡金属硫族化合物二维材料—石墨烯异质结构及其原位生长方法. CN: CN106756871A, 2017-05-31.
[15] 隋妍萍, 于广辉, 张燕辉, 陈志蓥, 葛晓明, 张浩然. 一种基于石墨烯的表面增强拉曼基底及其制备方法. CN: CN106248649A, 2016-12-21.
[16] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种基于干法清洗工艺制备铜衬底的方法. CN: CN106884153A, 2017-06-23.
[17] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种基于清洗工艺制备铜衬底的方法. CN: CN106884152A, 2017-06-23.
[18] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种干法转移金属衬底上石墨烯的方法. CN: CN106882792A, 2017-06-23.
[19] 张浩然, 于广辉, 张燕辉, 张亚欠, 陈志蓥, 隋妍萍. 基于氧化亚铜薄膜衬底低成核密度石墨烯单晶的制备方法. CN: CN104975344A, 2015-10-14.
[20] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 张浩然, 张亚欠, 葛晓明, 徐伟. 一种提高金属电极与石墨烯欧姆接触的方法. CN: CN104851787A, 2015-08-19.
[21] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 张浩然, 张亚欠, 葛晓明, 徐伟. 一种通过高温高压提高石墨烯表面洁净度的方法. CN: CN104803377A, 2015-07-29.
[22] 王斌, 于广辉, 赵智德, 徐伟, 隋妍萍, 张燕辉. 一种用于HVPE生长GaN单晶的复合籽晶模板及方法. CN: CN104078335A, 2014-10-01.
[23] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 张浩然, 张亚欠, 汤春苗, 朱博, 李晓良. 一种提高石墨烯表面洁净度的湿法腐蚀化学转移法. CN: CN104030274A, 2014-09-10.
[24] 张燕辉, 于广辉, 陈志蓥, 王斌, 隋妍萍, 张浩然, 张亚欠, 李晓良. 一种石墨烯的表征方法. CN: CN105021621A, 2015-11-04.
[25] 王斌, 于广辉, 赵志德, 徐伟, 张燕辉, 陈志蓥, 隋妍萍. 一种GaN单晶自支撑衬底的制备方法. CN: CN103928583A, 2014-07-16.
[26] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 王斌, 张浩然, 张亚欠, 李晓良. 一种通过无损掺杂提高石墨烯迁移率的方法. CN: CN103896262A, 2014-07-02.
[27] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 王斌, 张浩然, 张亚欠, 汤春苗, 朱博, 李晓良. 一种辨别石墨烯连续膜完整性的方法. CN: CN103900870A, 2014-07-02.
[28] 张燕辉, 于广辉, 陈志蓥, 王斌, 隋妍萍, 张浩然, 张亚欠, 李晓良. 一种利用石墨烯判定铜衬底表面晶向的方法. CN: CN104807810A, 2015-07-29.
[29] 张燕辉, 于广辉, 陈志蓥, 王斌, 隋妍萍, 张浩然, 张亚欠, 李晓良. 一种CVD石墨烯薄膜区域择优选取的方法. CN: CN104805419A, 2015-07-29.
[30] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 直观显示金属衬底上CVD石墨烯表面缺陷分布的方法. CN: CN103352210A, 2013-10-16.
[31] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 直观显示金属衬底上CVD石墨烯表面褶皱分布的方法. CN: CN103353437A, 2013-10-16.
[32] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 增大化学气相沉积石墨烯单晶晶畴尺寸的方法. CN: CN103352249A, 2013-10-16.
[33] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 便于观察金属衬底上化学气相沉积石墨烯表面褶皱分布的方法. CN: CN103353276A, 2013-10-16.
[34] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 一种柔性导热垫片的制备方法. CN: CN103965839A, 2014-08-06.
[35] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 一种增强泡沫铜在较高温度下抗氧化能力的方法. CN: CN103924207A, 2014-07-16.
[36] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 一种增强泡沫铜抗氧化能力的方法. CN: CN103924274A, 2014-07-16.
[37] 陈志蓥, 于广辉, 王斌, 张燕辉, 王彬, 赵智德, 吴渊文, 张浩然. 一种修饰石墨烯薄膜的方法. CN: CN103848416A, 2014-06-11.
[38] 王浩敏, 谢红, 刘晓宇, 张有为, 陈志蓥, 于广辉, 谢晓明. 一种石墨烯场效应器件制备方法. CN: CN102915929A, 2013-02-06.
[39] 吴渊文, 于广辉, 师小萍, 王彬, 张燕辉, 陈志蓥. 一种在钼基衬底上制备石墨烯薄膜的方法. CN: CN102344131A, 2012-02-08.
[40] 王新中, 于广辉, 林朝通, 曹明霞, 卢海峰, 李晓良, 巩 航, 齐 鸣, 李爱珍. 一种厚膜氮化镓与衬底蓝宝石自剥离的实现方法. CN: CN101488475B, 2010-09-01.
[41] 于广辉, 王新中, 林朝通, 曹明霞, 卢海峰, 李晓良, 巩 航, 齐 鸣, 李爱珍. HVPE方法生长GaN膜中使用的多孔材料衬底及方法. CN: CN101514484A, 2009-08-26.
[42] 王新中, 于广辉, 林朝通, 曹明霞, 巩 航, 齐 鸣, 李爱珍. 利用均匀纳米粒子点阵掩模提高厚膜GaN质量的方法. CN: CN101350298A, 2009-01-21.
[43] 王新中, 于广辉, 林朝通, 曹明霞, 巩 航, 齐 鸣, 李爱珍. HVPE方法生长氮化镓膜中的SiO 2 纳米掩膜及方法. 中国: CN100565804, 2009-12-02.
[44] 王新中, 于广辉, 林朝通, 曹明霞, 巩航, 齐鸣, 李爱珍. HVPE方法生长氮化镓膜中的SiO 2 纳米掩膜及方法. CN: CN101320686A, 2008-12-10.
[45] 王新中, 于广辉, 雷本亮, 林朝通, 王笑龙, 齐 鸣. 采用干法刻蚀制备氮化镓纳米线阵列的方法. CN: CN101229912B, 2010-06-16.
[46] 林朝通, 于广辉, 雷本亮, 王新中, 王笑龙, 齐 鸣. 钨辅助热退火制备氮化镓纳米线的制备方法. CN: CN101220466A, 2008-07-16.
[47] 王笑龙, 于广辉, 隋妍萍, 雷本亮, 齐 鸣, 李爱珍. 一种因干法刻蚀受损伤的氮化镓基材料的回复方法. CN: CN1838384A, 2006-09-27.
[48] 雷本亮, 于广辉, 齐鸣, 叶好华, 孟胜, 李爱珍. 一种改变氢化物气相外延法生长的氮化镓外延层极性的方法. CN: CN1832112A, 2006-09-13.
[49] 雷本亮, 于广辉, 王笑龙, 齐鸣, 孟胜, 李爱珍. 以多孔氮化镓作为衬底的氮化镓膜的生长方法. CN: CN1828837B, 2011-04-20.
[50] 雷本亮, 于广辉, 齐 鸣, 叶好华, 孟 胜, 李爱珍. 氢化物气相外延生长氮化镓膜中的金属插入层及制备方法. CN: CN1737195A, 2006-02-22.
[51] 雷本亮, 于广辉, 齐鸣, 叶好华, 孟胜, 李爱珍. 氢化物气相外延生长氮化镓膜中的氧化铝掩膜及制备方法. CN: CN1744287A, 2006-03-08.
[52] 于广辉, 雷本亮, 叶好华, 齐 鸣, 李爱珍. 氢化物气相外延生长氮化镓膜中的低温插入层及制备方法. CN: CN1587438A, 2005-03-02.
[53] 于广辉, 雷本亮, 叶好华, 齐鸣, 李爱珍. 改进氢化物气相外延生长氮化镓结晶膜表面质量的方法. CN: CN1588624A, 2005-03-02.
[54] 于广辉, 叶好华, 雷本亮, 李爱珍, 齐鸣. 一种用于气相沉积的水平式反应器结构. CN: CN1242093C, 2006-02-15.
[55] 孙洪波, 李玉东, 胡礼中, 苏士昌, 于广辉, 刘式墉. 五段式碰撞脉冲锁模量子阱激光器. CN: CN1043174C, 1999-04-28.
[2] 王爽, 于广辉, 张燕辉, 陈志蓥. MoX 2 /WX 2 横向异质结的制备方法. CN: CN114122194A, 2022-03-01.
[3] 康鹤, 于广辉, 张燕辉, 陈志蓥. 一种铂衬底上石墨烯的表征方法. CN: CN113866161A, 2021-12-31.
[4] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 梁逸俭, 胡诗珂, 李晶, 康鹤, 王爽. 一种反向转移石墨烯的方法. CN: CN111422860A, 2020-07-17.
[5] 张燕辉, 于广辉, 陈志蓥, 隋妍萍. 一种石墨薄膜的制备方法. CN: CN111072022A, 2020-04-28.
[6] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 梁逸俭, 胡诗珂, 李晶, 康鹤, 王爽. 一种改变双层石墨烯耦合性的方法及双层石墨烯. CN: CN110683533A, 2020-01-14.
[7] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 梁逸俭, 胡诗珂, 李晶, 康鹤, 王爽. 一种改变双层石墨烯耦合性的方法及双层石墨烯. CN: CN110683533B, 2023-04-07.
[8] 张燕辉, 于广辉, 陈志蓥, 隋妍萍. 铜晶须的制备方法. CN: CN108570710A, 2018-09-25.
[9] 张燕辉, 于广辉, 陈志蓥, 隋妍萍, 葛晓明, 邓荣轩, 梁逸俭, 胡诗珂. 一种石墨烯-玻璃及其制备方法. CN: CN108439812A, 2018-08-24.
[10] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 葛晓明, 胡诗珂, 梁逸俭. 一种提高石墨烯膜表面亲水性的方法. CN: CN106829943A, 2017-06-13.
[11] 张燕辉, 于广辉, 陈志蓥, 隋妍萍, 葛晓明, 邓荣轩, 梁逸俭, 胡诗珂. 一种石墨烯玻璃. CN: CN206317488U, 2017-07-11.
[12] 张燕辉, 于广辉, 隋妍萍, 陈志蓥, 邓荣轩, 葛晓明, 梁逸俭, 胡诗珂. 一种无粘连插层金属箔片堆垛制备石墨烯的方法. CN: CN106591798A, 2017-04-26.
[13] 于广辉, 张燕辉, 隋妍萍, 陈志蓥, 邓荣轩, 葛晓明, 梁逸俭, 胡诗珂. 一种无粘连金属密堆生长石墨烯的方法. CN: CN106756869A, 2017-05-31.
[14] 于广辉, 吴天如, 谢晓明, 时志远, 陈吉, 张燕辉, 隋妍萍, 陈志蓥. 一种过渡金属硫族化合物二维材料—石墨烯异质结构及其原位生长方法. CN: CN106756871A, 2017-05-31.
[15] 隋妍萍, 于广辉, 张燕辉, 陈志蓥, 葛晓明, 张浩然. 一种基于石墨烯的表面增强拉曼基底及其制备方法. CN: CN106248649A, 2016-12-21.
[16] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种基于干法清洗工艺制备铜衬底的方法. CN: CN106884153A, 2017-06-23.
[17] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种基于清洗工艺制备铜衬底的方法. CN: CN106884152A, 2017-06-23.
[18] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种干法转移金属衬底上石墨烯的方法. CN: CN106882792A, 2017-06-23.
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出版信息
发表论文
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[72] Sui, Yanping, Wang, Bin, Zhao, Zhide, Xu, Wei, Li, Xiaoliang, Wang, Xinzhong, Yu, Guanghui. Facet growth of self-separated GaN layers through HVPE on large square-patterned template. JOURNAL OF CRYSTAL GROWTH[J]. 2014, 第 7 作者 通讯作者 394: 11-17, http://dx.doi.org/10.1016/j.jcrysgro.2014.01.059.
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[76] Wang, Bin, Zhang, Yanhui, Chen, Zhiying, Wu, Yuanwen, Jin, Zhi, Liu, Xinyu, Hu, Lizhong, Yu, Guanghui. High quality graphene grown on single-crystal Mo(110) thin films. MATERIALS LETTERS[J]. 2013, 第 8 作者 通讯作者 93: 165-168, http://dx.doi.org/10.1016/j.matlet.2012.11.088.
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科研活动
科研项目
（ 1 ） HVPE法生长GaN自支撑衬底项目(横向成果转化课题）, 负责人, 其他任务, 2011-04--2020-12
（ 2 ） Graphene场效应晶体管及其集成技术研究, 参与, 国家任务, 2012-01--2016-12
（ 3 ） 金属衬底上石墨烯制备（JK973), 参与, 国家任务, 2013-01--2016-12
（ 4 ） 面向自旋逻辑应用的二维材料可控制备, 负责人, 国家任务, 2017-01--2017-11
（ 5 ） 面向逻辑器件应用的高质量二硫化钼单晶晶圆的制备, 负责人, 国家任务, 2018-01--2019-12
（ 6 ） 高质量石墨烯材料应用研究, 负责人, 国家任务, 2019-01--2020-12
（ 7 ） 面向自旋逻辑应用的二维材料制备, 负责人, 国家任务, 2020-05--2021-12
（ 8 ） 面向高开关比、低功耗逻辑器件应用的4英寸高质量二硫化钼单晶晶圆制备, 负责人, 地方任务, 2020-10--2022-09
（ 9 ） 面向柔性电子器件应用的高质量石墨烯单晶晶圆制备, 负责人, 地方任务, 2021-05--2023-04
（ 2 ） Graphene场效应晶体管及其集成技术研究, 参与, 国家任务, 2012-01--2016-12
（ 3 ） 金属衬底上石墨烯制备（JK973), 参与, 国家任务, 2013-01--2016-12
（ 4 ） 面向自旋逻辑应用的二维材料可控制备, 负责人, 国家任务, 2017-01--2017-11
（ 5 ） 面向逻辑器件应用的高质量二硫化钼单晶晶圆的制备, 负责人, 国家任务, 2018-01--2019-12
（ 6 ） 高质量石墨烯材料应用研究, 负责人, 国家任务, 2019-01--2020-12
（ 7 ） 面向自旋逻辑应用的二维材料制备, 负责人, 国家任务, 2020-05--2021-12
（ 8 ） 面向高开关比、低功耗逻辑器件应用的4英寸高质量二硫化钼单晶晶圆制备, 负责人, 地方任务, 2020-10--2022-09
（ 9 ） 面向柔性电子器件应用的高质量石墨烯单晶晶圆制备, 负责人, 地方任务, 2021-05--2023-04
指导学生
已指导学生
卢海峰 硕士研究生 080903-微电子学与固体电子学
师小萍 硕士研究生 080903-微电子学与固体电子学
曹明霞 硕士研究生 080903-微电子学与固体电子学
吴渊文 硕士研究生 080903-微电子学与固体电子学
赵智德 博士研究生 080903-微电子学与固体电子学
张亚欠 硕士研究生 080903-微电子学与固体电子学
张浩然 博士研究生 080903-微电子学与固体电子学
邓荣轩 硕士研究生 080903-微电子学与固体电子学
葛晓明 博士研究生 080903-微电子学与固体电子学
梁逸俭 博士研究生 080903-微电子学与固体电子学
胡诗珂 博士研究生 080903-微电子学与固体电子学
李晶 博士研究生 080903-微电子学与固体电子学
朱虹延 博士研究生 080903-微电子学与固体电子学
康鹤 博士研究生 080903-微电子学与固体电子学
现指导学生
王爽 博士研究生 080903-微电子学与固体电子学
肖润涵 硕士研究生 085400-电子信息
赵孙文 博士研究生 080903-微电子学与固体电子学
田闯 硕士研究生 085600-材料与化工
刘家文 博士研究生 080903-微电子学与固体电子学