基本信息
俞跃辉  男  博导  中国科学院上海微系统与信息技术研究所
电子邮件: yhyu@mail.sim.ac.cn
通信地址: 长宁路865号
邮政编码: 200050

招生信息

   
招生专业
080903-微电子学与固体电子学
085400-电子信息
招生方向
功率电子

教育背景

1985-09--1989-11   上海微系统与信息技术研究所   博士学位
1980-07--1985-07   吉林大学电子工程系   学士学位

工作经历

   
工作简历
1992-10~2011-07,上海微系统与信息技术研究所, 助研,副研,正研
1990-10~1992-10,德国FHG集成技术研究所, 博士后
1985-09~1989-11,上海微系统与信息技术研究所, 博士学位
1980-07~1985-07,吉林大学电子工程系, 学士学位

专利与奖励

   
奖励信息
(1) 亥姆霍兹联合会杰出国际科技合作奖"Helmholtz International Fellow Aw, 一等奖, 专项, 2013
(2) 高端硅基SOI材料研究, , 院级, 2007
(3) 高端硅基SOI材料研发和产业化, 一等奖, 国家级, 2006

出版信息

   
发表论文
(1) Optimized JFET regions of 4H-SiC VDMOS with reduced on-resistance and improved gate oxide reliability, Journal of Physics D: Applied Physics, 2020, 通讯作者
(2) PbS colloidal quantum dots patterning technique with low vertical leakage current for the photodetection applications, Journal of Materials Science: Materials in Electronics, 2020, 通讯作者
(3) Band alignment regulation of HfO2/SiC heterojunctions induced by PEALD with in situ NH3-plasma passivation, Physics Letters A, 2019, 通讯作者
(4) Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors, Superlattices and Microstructures, 2019, 通讯作者
(5) Ambipolar graphene–quantum dot phototransistors with CMOS compatibility, Advanced Optical Materials, 2018, 通讯作者
(6) Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation, IEEE ELECTRON DEVICE LETTERS, 2017, 通讯作者
(7) Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3, RSC Adv., 2017, 通讯作者
(8) Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer, APPLIED SURFACE SCIENCE, 2017, 通讯作者
(9) Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation, APPLIED SURFACE SCIENCE, 2017, 通讯作者
(10) Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures, RSC Advances, 2016, 通讯作者
(11) Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices, J. Mater. Chem. C, 2016, 通讯作者
(12) Direct growth of Sb2Te3 on graphene by atomic layer deposition, RSC Adv., 2015, 通讯作者
(13) Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition, Phys .Chem. Chem. Phys, 2015, 通讯作者
(14) Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment, ACS Appl. Mater. Interfaces, 2014, 通讯作者
(15) Effects ofrapidthermalannealingonpropertiesofHfAlO films directly deposited byALDongraphene, Materials Letters, 2014, 通讯作者
(16) Al2O3-Gd2O3 double-films grown on graphene directly by H2O-assisted atomic layer deposition, RSC Adv, 2014, 通讯作者
(17) Properties of HfO2/La2O3 nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition,  RSC Adv, 2014, 通讯作者
(18) Multi-gates SOI LDMOS for improved on-state performance , 2014 IEEE 26th ISPSD, 2014, 通讯作者
(19) Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition,  Appl. Phys. Lett, 2014, 通讯作者
(20) ON-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOS,  IEEE Transaction on Electron Devices, 2013, 通讯作者
(21) Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films , Applied Physics Letters, 2013, 通讯作者
(22) characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron-beam evaporation, Applied Physics Letter , 2006, 通讯作者
(23) Tetrahedral amorphous-carbon thin films for silicon-on-insulator application, Applied Physics Letter, 2002, 通讯作者

科研活动

   
科研项目
( 1 ) 高K栅介质材料, 主持, 国家级, 2009-06--2011-12
( 2 ) 20-14nm技术代关键材料技术和产品开发(2014ZX02301003, 主持, 国家级, 2016-01--2018-12
( 3 ) Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究, 参与, 国家级, 2012-01--2015-12
( 4 ) 针对多层MoS2的低能等离子体可控掺杂机理及原位缺陷修饰研究, 参与, 国家级, 2018-01--2020-12
( 5 ) ALD等离子体系统原位钝化SiC界面及快慢双能态陷阱共轭抑制机理研究, 参与, 国家级, 2021-01--2024-12