基本信息

王启明 男 博导 中国科学院半导体研究所
电子邮件: qmwang@red.semi.ac.cn
通信地址: 北京912信箱
邮政编码: 100083
电子邮件: qmwang@red.semi.ac.cn
通信地址: 北京912信箱
邮政编码: 100083
教育背景
1952-09--1956-07 复旦大学 大学毕业
工作经历
工作简历
1985-07~现在, 中国科学院半导体研究所, 研究员
1960-09~1985-06,中国科学院半导体研究所, 助理研究员、副研究员
1956-07~1960-09,中国科学院应用物理研究所(物理所), 实习研究员、助理研究员
1952-09~1956-07,复旦大学, 大学毕业
1960-09~1985-06,中国科学院半导体研究所, 助理研究员、副研究员
1956-07~1960-09,中国科学院应用物理研究所(物理所), 实习研究员、助理研究员
1952-09~1956-07,复旦大学, 大学毕业
社会兼职
2000-09-24-今,中国光学学会, 常务理事
专利与奖励
奖励信息
(1) 中国科学院研究生院杰出贡献教师奖, 院级, 2005
(2) 何梁何利奖, 其他, 1999
(3) 国家级有突出贡献专家, 国家级, 1988
(4) 国家级有突出贡献专家, 国家级, 1987
(5) 国家级有突出贡献专家, 国家级, 1986
(2) 何梁何利奖, 其他, 1999
(3) 国家级有突出贡献专家, 国家级, 1988
(4) 国家级有突出贡献专家, 国家级, 1987
(5) 国家级有突出贡献专家, 国家级, 1986
专利成果
( 1 ) 硅基宽光谱探测器及制备方法, 2017, 第 5 作者, 专利号: 201510968014.7
( 2 ) 单光子源器件的制备方法, 2016, 第 3 作者, 专利号: 201410054031.5
( 3 ) 硅基锗激光器及其制备方法, 2015, 第 5 作者, 专利号: 201310342715.0
( 2 ) 单光子源器件的制备方法, 2016, 第 3 作者, 专利号: 201410054031.5
( 3 ) 硅基锗激光器及其制备方法, 2015, 第 5 作者, 专利号: 201310342715.0
出版信息
发表论文
(1) Characterization of a Ge1���x���ySiySnx/Ge1���xSnx multiple quantum well structure grown by sputtering epitaxy, Letter, 2017,
(2) Ultrathin Broadband Germanium���Graphene Hybrid Photodetector with High Performance, ACS Applied Materials & Interfaces Research, 2017, 第 8 作者
(3) Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 7 作者
(4) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 9 作者
(5) Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering, VACUUM, 2016, 第 5 作者
(6) 光纤通信有源器件的发展现状, Progress in active devices for optical fiber communication, 电信科学, 2016, 第 1 作者
(7) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 9 作者
(8) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 第 9 作者
(9) Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 第 7 作者
(10) Ni ohmic contacts to n-type Ge1���x���ySixSny using phosphorous implant and segregation, AIP ADVANCES, 2015, 第 7 作者
(11) Efficient 1.54-mu m emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation, JOURNAL OF LUMINESCENCE, 2015, 第 5 作者
(12) Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth, THIN SOLID FILMS, 2015,
(13) High performance silicon waveguide germanium photodetector, CHINESE PHYSICS B, 2015, 第 6 作者
(14) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects, 中国物理B, 2014, 第 5 作者
(15) Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering,Journal of Luminescence, Journal of Luminescence, 2014, 第 1 作者
(16) Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 8 作者
(17) Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, 中国物理快报:英文版, 2011,
(18) Highly efficient 1.53um luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate, Materials Letters, 2011, 第 1 作者
(19) Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 6 作者
(20) Efficient 1.53um emission and energy transfer in Si/Er-Si-O multilayer substrate, Materials Research Bulletin, 2011, 第 1 作者
(21) The contributions of composition and strain to the phonon shift in ge1-xsnx alloys, SOLID STATE COMMUNICATIONS, 2011, 第 8 作者
(22) Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜, Epitaxial growth of Ge_(0.975)Sn_(0.025) alloy films on Si(001) substrates by molecular beam epitaxy, 物理学报, 2011, 第 9 作者
(23) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 8 作者
(24) Gesn p-i-n photodetector for all telecommunication bands detection, OPTICS EXPRESS, 2011, 第 10 作者
(25) Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates, CHINESE PHYSICS B, 2011, 第 7 作者
(2) Ultrathin Broadband Germanium���Graphene Hybrid Photodetector with High Performance, ACS Applied Materials & Interfaces Research, 2017, 第 8 作者
(3) Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 7 作者
(4) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 9 作者
(5) Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering, VACUUM, 2016, 第 5 作者
(6) 光纤通信有源器件的发展现状, Progress in active devices for optical fiber communication, 电信科学, 2016, 第 1 作者
(7) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 9 作者
(8) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 第 9 作者
(9) Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 第 7 作者
(10) Ni ohmic contacts to n-type Ge1���x���ySixSny using phosphorous implant and segregation, AIP ADVANCES, 2015, 第 7 作者
(11) Efficient 1.54-mu m emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation, JOURNAL OF LUMINESCENCE, 2015, 第 5 作者
(12) Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth, THIN SOLID FILMS, 2015,
(13) High performance silicon waveguide germanium photodetector, CHINESE PHYSICS B, 2015, 第 6 作者
(14) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects, 中国物理B, 2014, 第 5 作者
(15) Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering,Journal of Luminescence, Journal of Luminescence, 2014, 第 1 作者
(16) Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 8 作者
(17) Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, 中国物理快报:英文版, 2011,
(18) Highly efficient 1.53um luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate, Materials Letters, 2011, 第 1 作者
(19) Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 6 作者
(20) Efficient 1.53um emission and energy transfer in Si/Er-Si-O multilayer substrate, Materials Research Bulletin, 2011, 第 1 作者
(21) The contributions of composition and strain to the phonon shift in ge1-xsnx alloys, SOLID STATE COMMUNICATIONS, 2011, 第 8 作者
(22) Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜, Epitaxial growth of Ge_(0.975)Sn_(0.025) alloy films on Si(001) substrates by molecular beam epitaxy, 物理学报, 2011, 第 9 作者
(23) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 8 作者
(24) Gesn p-i-n photodetector for all telecommunication bands detection, OPTICS EXPRESS, 2011, 第 10 作者
(25) Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates, CHINESE PHYSICS B, 2011, 第 7 作者
发表著作
( 1 ) 太阳电池发展现状及性能提升研究, 科学出版社, 2014-06, 第 1 作者
科研活动
科研项目
( 1 ) 面向硅基发光的直接带隙合金材料基础研究, 负责人, 中国科学院计划, 2017-05--2022-05
( 2 ) 基于金属-硅锗-金属垂直结构中的自旋电子输运与原子核自旋探测, 负责人, 国家任务, 2015-01--2017-12
( 3 ) 运用量子尺寸效应和杂质中间带提高硅基太阳电池效率的研究, 参与, 国家任务, 2011-01--2014-12
( 2 ) 基于金属-硅锗-金属垂直结构中的自旋电子输运与原子核自旋探测, 负责人, 国家任务, 2015-01--2017-12
( 3 ) 运用量子尺寸效应和杂质中间带提高硅基太阳电池效率的研究, 参与, 国家任务, 2011-01--2014-12