基本信息
陈涌海 男 博导 半导体研究所
电子邮件：yhchen@semi.ac.cn
电 话：010-82304815
通信地址：北京市海淀区清华东路甲35号
邮政编码：100083
教育背景
学历
1990年在北京大学获得学士学位，1993年在北京科技大学获得硕士学位，1998年在中科院半导体所获得博士学位，多次前往香港科技大学进行合作研究。
学位
-- 博士
教授课程
半导体光学
出版信息
部分发表论文
[1] 马泽军, 李远, 朱申波, 程凤敏, 刘俊岐, 王利军, 翟慎强, 卓宁, 陈涌海, 张锦川, 刘舒曼, 刘峰奇. 界面特性对InAs/GaSb Ⅱ型超晶格光学性质影响理论研究. 发光学报[J]. 2024, 第 9 作者45(5): 817-823, http://lib.cqvip.com/Qikan/Article/Detail?id=7112115848.
[2] Zongkai Lin, Runyu Zhao, Jinling Yu, Qiang Li, Weiran Xie, Yunfeng Lai, Yonghai Chen, Tianxiao Nie, Shuying Cheng. Investigation of Interface-Induced Helicity-Dependent Photocurrent and High-T C Ferromagnetism in Wafer-Scale 2D Ferromagnetic Fe4GeTe2/Bi2Te3 Heterostructures. Acs Applied Materials & Interfaces[J]. 2024, 第 7 作者null(null):
[3] Zeng, Xiaolin, Wu, Jing, Zhu, Shenbo, Liu, Yu, Zhang, Yang, Li, Yuan, Chen, Yonghai. Strain-modulated anomalous circular photogalvanic effect in p-type GaAs. NEW JOURNAL OF PHYSICS[J]. 2024, 第 7 作者 通讯作者 26(1): http://dx.doi.org/10.1088/1367-2630/ad1a2b.
[4] Yu, Qin, Feng, Shizun, Yu, Jinling, Cheng, Shuying, Lai, Yunfeng, Chen, Yonghai, He, Ke. Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi 2 Te 3 Nanowires. ACS APPLIED MATERIALS & INTERFACES[J]. 2024, 第 6 作者16(30): 40297-40308, http://dx.doi.org/10.1021/acsami.4c11221.
[5] Yu, Qin, Yu, Jinling, Chen, Yonghai, Lai, Yunfeng, Cheng, Shuying, He, Ke. Investigation of helicity-dependent photocurrent of surface states in (Bi 0.7 Sb 0.3 ) 2 Te 3 nanoplate. CHINESE PHYSICS B[J]. 2024, 第 3 作者33(5): 057101-057101, http://dx.doi.org/10.1088/1674-1056/ad322c.
[6] 黄威, 俞金玲, 刘雨, 彭燕, 王利军, 梁平, 陈堂胜, 徐现刚, 刘峰奇, 陈涌海. Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy. CHINESE PHYSICS B[J]. 2024, 第 10 作者 通讯作者 33(3): 630-637, http://lib.cqvip.com/Qikan/Article/Detail?id=7111740632.
[7] Fu, Houfa, Yu, Jinling, Bai, Yunhe, Cheng, Shuying, Lai, Yunfeng, Chen, Yonghai, He, Ke, Xue, Qikun. Helicity-dependent photocurrent of topological surface states in the intrinsic magnetic topological insulator MnBi 2 Te 4. APPLIED PHYSICS LETTERS[J]. 2024, 第 6 作者124(10): http://dx.doi.org/10.1063/5.0193807.
[8] Zhou, Yuchao, Yu, Jinling, Chen, Yonghai, Lai, Yunfeng, Cheng, Shuying. Helicity-dependent photoconductance of the edge states in the topological insulator Bi 2 Te 3. CHINESE PHYSICS B[J]. 2023, 第 3 作者32(8): 087102-087102, https://cpb.iphy.ac.cn/EN/1674-1056/home.shtml/article/doi/10.1088/1674-1056/acc3fb.
[9] Chen, Shenzhong, Yu, Jinling, Hong, Xiyu, Zhu, Kejing, Chen, Yonghai, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi1-XSbX)2Te3 topological insulator thin films. PHOTONICS RESEARCH[J]. 2023, 第 5 作者11(11): 1902-1911, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7637003&detailType=1.
[10] Ma, Hui, Zhu, Yaojie, Chen, Yonghai, Jiang, Chongyun. Tuning spin-orbit coupling and realizing inverse persistent spin helix by an extra above-barrier radiation in a GaAs/Al0.3Ga0.7As heterostructure. OPTICS EXPRESS[J]. 2023, 第 3 作者31(9): 14473-14481, http://dx.doi.org/10.1364/OE.488528.
[11] Wu, Wenyi, Yu, Jinling, Chen, YongHai, Liu, Yu, Cheng, Shuying, Lai, Yunfeng, Sun, Jie, Zhou, Hai, He, Ke. Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets. ACS NANO. 2023, 第 3 作者http://dx.doi.org/10.1021/acsnano.3c02812.
[12] YuchaoZhou, JinlingYu, YonghaiChen, YunfengLai, ShuyingCheng. Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3. Chinese Physics B[J]. 2023, 第 3 作者32(8): 87102-087102, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/acc3fb.
[13] 王浩然, 李远, 马泽军, 朱申波, 李冠华, 刘雨, 俞金玲, 陈涌海. 基于有限差分的带间级联结构理论研究. 半导体光电[J]. 2023, 第 8 作者44(4): 586-590, http://lib.cqvip.com/Qikan/Article/Detail?id=7110724942.
[14] Lang, Xinjie, Yu, Jinling, Hong, Xiyu, Chen, Yonghai, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Spatial distribution of photo-induced anomalous Hall effects of the top and bottom surface states in topological insulators Sb2Te3. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2023, 第 4 作者150: http://dx.doi.org/10.1016/j.physe.2023.115663.
[15] Hui Ma, Yaojie Zhu, Ruixue Bai, Xilin Zhang, YuLun Liu, Nanhai Xiao, Chenxue Xie, Yanbo Ren, Xiaoyu Cheng, Yonghai chen, Chongyun Jiang. Optical manipulation of linear magnetogyrotropic photogalvanic effect in a GaAs/Al0.3Ga0.7As heterostructure. Applied Physics Letters[J]. 2023, 第 10 作者123: 082102-1,
[16] Li, Minggui, Yu, Jinling, Cui, Guangzhou, Chen, Yonghai, Lai, Yunfeng, Cheng, Shuying, He, Ke. Circular photogalvanic effect of surface states in the topological insulator Bi-2(Te0.23Se0.77)(3) nanowires grown by chemical vapor deposition. JOURNAL OF APPLIED PHYSICS[J]. 2022, 第 4 作者131(11): http://dx.doi.org/10.1063/5.0084762.
[17] Wu, Wenyi, Yu, Jinling, Xia, Lijia, Zhu, Kejing, Zeng, Xiaolin, Chen, Yonghai, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke. Giant photoinduced inverse spin Hall effect of the surface states in three dimensional topological insulators Bi2Te3 with different thickness. OPTICS EXPRESS[J]. 2022, 第 6 作者30(9): 15085-15095, http://dx.doi.org/10.1364/OE.456150.
[18] Zeng, Xiao Lin, Liu, Yu, Zhang, Yang, Wu, Jing, Zhu, Shen Bo, Chen, Yong Hai. Observation of the spin-Hall effect in Pt/GaAs by circular polarized photoconductivity. OPTICS EXPRESS[J]. 2022, 第 6 作者 通讯作者 30(2): 2089-2096, http://dx.doi.org/10.1364/OE.448300.
[19] Zhang, Yang, Liu, Yu, Xue, XiaoLan, Zeng, XiaoLin, Wu, Jing, Shi, LiWei, Chen, YongHai. Current-Induced Spin Photocurrent in GaAs at Room Temperature. SENSORS[J]. 2022, 第 7 作者 通讯作者 22(1): https://doaj.org/article/70224eda23d24b52a407fcc2886a9e95.
[20] Wu, Wenyi, Yu, Jinling, Jiang, Yuying, Zeng, Xiaolin, Chen, Yonghai, Liu, Yu, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Tuning of circular photogalvanic effect of surface states in the topological insulator Sb2Te3 via structural deformation. APPLIED PHYSICS LETTERS[J]. 2022, 第 5 作者120(6): http://dx.doi.org/10.1063/5.0080033.
[21] Chen, Shenzhong, Yu, Jinling, Zhu, Kejing, Liu, Qibin, Zeng, Xiaolin, Chen, Yonghai, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke. Photo-induced inverse spin Hall effect of the top and bottom Dirac surface states of three-dimensional topological insulators Sb2Te3. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2022, 第 6 作者143:
[22] 陈涌海. Anomalous circular photogalvanic effect in p-GaAs. Optics Express. 2021, 第 1 作者 通讯作者
[23] Yu, Jinling, Zhuang, Hang, Zhu, Kejing, Chen, Yonghai, Liu, Yu, Zhang, Yang, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Observation of current-induced spin polarization in the topological insulator Bi2Te3 via circularly polarized photoconductive differential current. PHYSICAL REVIEW B[J]. 2021, 第 4 作者104(4): http://dx.doi.org/10.1103/PhysRevB.104.045428.
[24] Zhuang, Hang, Yu, Jinling, Chen, Lei, Gu, Peng, Chen, Yonghai, Liu, Yu, Yin, Chunming, Lai, Yunfeng, Cheng, Shuying. Giant circular photogalvanic effect of the surface states in an ultra-thin Bi2Se3 nanoplate grown by chemical vapor deposition. JOURNAL OF APPLIED PHYSICS[J]. 2021, 第 5 作者129(10): http://dx.doi.org/10.1063/5.0045473.
[25] Chen, Shenzhong, Yu, Jinling, Zhu, Kejing, Zeng, Xiaolin, Chen, Yonghai, Liu, Yu, Zhang, Yang, Cheng, Shuying, He, Ke. In-plane magnetic field induced helicity dependent photogalvanic effect on the surface states of topological insulators (BixSb1-x)(2)Te-3. JOURNAL OF APPLIED PHYSICS[J]. 2021, 第 5 作者 通讯作者 130(8): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000694997000002.
[26] Sun, Yang, Yang, Cheng, Li, Qicong, Liu, Kong, Xue, Xiaodi, Zhang, Yang, Azam, Muhammad, Ren, Kuankuan, Chen, Yonghai, Wang, Zhijie, Qu, Shengchun, Wang, Zhanguo. The route and optimization of charge transport in ternary organic solar cells based on O6T-4F and PC71BM as acceptors. JOURNAL OF POWER SOURCES[J]. 2020, 第 9 作者449: http://dx.doi.org/10.1016/j.jpowsour.2019.227583.
[27] Zhang, Yang, Liu, Yu, Zeng, Xiao Lin, Wu, Jing, Yu, Jin Ling, Chen, Yong Hai. Distinguishing the inverse spin Hall effect photocurrent of electrons and holes by comparing to the classical Hall effect. OPTICS EXPRESS[J]. 2020, 第 6 作者 通讯作者 28(6): 8331-8340, http://dx.doi.org/10.1364/OE.387692.
[28] Yang, Cheng, Sun, Yang, Li, Qicong, Liu, Kong, Xue, Xiaodi, Huang, Yanbin, Ren, Kuankuan, Li, Long, Chen, Yonghai, Wang, Zhijie, Qu, Shengchun, Wang, Zhanguo. Nonfullerene Ternary Organic Solar Cell with Effective Charge Transfer between Two Acceptors. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2020, 第 9 作者11(3): 927-934, http://dx.doi.org/10.1021/acs.jpclett.9b03502.
[29] Yu, Jinling, Wu, Wenyi, Wang, Yumeng, Zhu, Kejing, Zeng, Xiaolin, Chen, Yonghai, Liu, Yu, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Giant photoinduced anomalous Hall effect of the topological surface states in three dimensional topological insulators Bi2Te3. APPLIED PHYSICS LETTERS[J]. 2020, 第 6 作者116(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000526892600004.
[30] Yu, Jinling, Xia, Lijia, Zhu, Kejing, Pan, Qinggao, Zeng, Xiaolin, Chen, Yonghai, Liu, Yu, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2Te3 via Spin Injection. ACS APPLIED MATERIALS & INTERFACES[J]. 2020, 第 6 作者12(15): 18091-18100, https://www.webofscience.com/wos/woscc/full-record/WOS:000526330900098.
[31] Zhang, Yang, Wang, Yu, Liu, Yu, Zeng, XiaoLin, Wu, Jing, Yu, JinLing, Chen, YongHai. Inverse spin Hall photocurrent in thin-film MoTe2. APPLIED PHYSICS LETTERS[J]. 2020, 第 7 作者 通讯作者 116(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000538171800002.
[32] Li, Qicong, Sun, Yang, Xue, Xiaodi, Yue, Shizhong, Liu, Kong, Azam, Muhammad, Yang, Cheng, Wang, Zhijie, Tan, Furui, Chen, Yonghai. Insights into Charge Separation and Transport in Ternary Polymer Solar Cells. ACS APPLIED MATERIALS & INTERFACES[J]. 2019, 第 10 作者 通讯作者 11(3): 3299-3307, http://dx.doi.org/10.1021/acsami.8b18240.
[33] Qicong Li, Yang Sun, Xiaodi Xue, Shizhong Yue, Kong Liu, Muhammad Azam, Cheng Yang, Zhijie Wang, Furui Tan, Yonghai Chen. Insights into Charge Separation and Transport in Ternary Polymer Solar Cells. ACS APPLIED MATERIALS AND INTERFACES[J]. 2019, 第 10 作者11(3): 3299-3307,
[34] Wang, Y M, Yu, J L, Zeng, X L, Chen, Y H, Liu, Y, Cheng, S Y, Lai, Y F, Yin, C M, He, K, Xue, Q K. Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi2Se3. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2019, 31(41):
[35] Xue, Xiaodi, Zhu, Laipan, Huang, Wei, Marie, Xavier, Renucci, Pierre, Liu, Yu, Zhang, Yang, Zeng, Xiaolin, Wu, Jing, Xu, Bo, Wang, Zhanguo, Chen, Yonghai, Zhang, Weifeng, Lu, Yuan. Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors. PHYSICAL REVIEW B[J]. 2019, 第 12 作者 通讯作者 100(4): http://dx.doi.org/10.1103/PhysRevB.100.045417.
[36] Xue, Xiaodi, Liu, Yu, Zhu, Laipan, Huang, Wei, Zhang, Yang, Zeng, Xiaolin, Wu, Jing, Xu, Bo, Wang, Zhanguo, Chen, Yonghai, Zhang, Weifeng. Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells. CHINESE PHYSICS LETTERS[J]. 2019, 第 10 作者 通讯作者 36(7): 77201-85, https://cpl.iphy.ac.cn/10.1088/0256-307X/36/7/077201.
[37] Li, Yuan, Liu, Fengqi, Ye, Xiaoling, Liu, Yu, Wang, Jiawei, Chen, Yonghai. Quantitative investigation of intrinsic shear strain and asymmetric interface conditions in semiconductor superlattices. JOURNAL OF APPLIED PHYSICS[J]. 2019, 第 6 作者126(6): http://dx.doi.org/10.1063/1.5107478.
[38] Yu, Jinling, Zhu, Kejing, Zeng, Xiaolin, Chen, Lei, Chen, Yonghai, Liu, Yu, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, Huang, Jin, He, Ke, Xue, Qikun. Helicity-dependent photocurrent of the top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators Sb2Te3. PHYSICAL REVIEW B[J]. 2019, 第 5 作者100(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000501347400002.
[39] 陈涌海. Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells. Chinese Physics Letters. 2019, 第 1 作者 通讯作者
[40] Yu, Jinling, Zeng, Xiaolin, Wang, Yumeng, Xia, Lijia, Cheng, Shuying, Chen, Yonghai, Liu, Yu, Lai, Yunfeng, Zheng, Qiao. Observation of Extrinsic Photo-Induced Inverse Spin Hall Effect in a GaAs/AlGaAs Two-Dimensional Electron Gas. NANOSCALE RESEARCH LETTERS[J]. 2018, 第 6 作者13(1): https://doaj.org/article/bb1c2876953f49769e8544ed251e15c8.
[41] Huang, Wei, Yue, Shizhong, Liu, Yu, Zhu, Laipan, Jin, Peng, Wu, Qing, Zhang, Yang, Chen, Yanan, Liu, Kong, Liang, Ping, Qu, Shengchun, Wang, Zhijie, Chen, Yonghai. Observation of Unusual Optical Band Structure of CH3NH3PbI3 Perovskite Single Crystal. ACS PHOTONICS[J]. 2018, 第 13 作者 通讯作者 5(4): 1583-+, http://dx.doi.org/10.1021/acsphotonics.8b00033.
[42] Huang Wei, Liu Yu, Yue ShiZhong, Zhu LaiPan, Jin Peng, Wu Qing, Zhang Yang, Qu ShengChun, Wang ZhiJie, Chen YongHai. Optical bandgap energy of CH3NH3PbI3 perovskite studied by photoconductivity and reflectance spectroscopy. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2018, 第 10 作者 通讯作者 61(6): 886-892, http://lib.cqvip.com/Qikan/Article/Detail?id=74698871504849564854484857.
[43] Jia, Caihong, Ren, Yong, Yang, Guang, Li, Jiachen, Chen, Yonghai, Zhang, Weifeng. Asymmetric resistive switching effect in ZnO/Nb:SrTiO3 heterojunctions. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2018, 第 5 作者124(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000424515500085.
[44] Zhang, Yang, Liu, Yu, Huang, Wei, Xue, XiaoDi, Chen, YongHai, Wang, ZhanGuo. The Mapping of Spin Photocurrent in In0.15Ga0.85As/Al0.3Ga0.7As Multiple Quantum Wells. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 第 5 作者 通讯作者 18(11): 7613-7616, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600052.
[45] Xue, Xiaodi, Huang, Wei, Zhu, Laipan, Zhang, Yang, Lu, Yuan, Liu, Yu, Chen, Yonghai, Wang, Zhanguo. Angular Dependence of the Spin Photocurrent in a Spin Light Emitting Diode. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 第 7 作者 通讯作者 18(11): 7573-7577, http://dx.doi.org/10.1166/jnn.2018.16078.
[46] Tian Yu, Shuman Liu, Jinchuan Zhang, Bo Xu, Lijun Wang, Junqi Liu, Ning Zhuo, Shenqiang Zhai, Xiaoling Ye, Yonghai Chen, Fengqi Liu, Zhanguo Wang. InAs-based interband cascade lasers at 4.0 μm operating at room temperature. 半导体学报(英文版)[J]. 2018, 第 10 作者39(11): 36-39, http://lib.cqvip.com/Qikan/Article/Detail?id=676666949.
[47] Zheng, Xiantong, Huang, Wei, Liang, Hongwei, Wang, Ping, Liu, Yu, Chen, Zhaoying, Liang, Ping, Li, Mo, Zhang, Jian, Chen, Yonghai, Wang, Xinqiang. Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 第 10 作者18(11): 7468-7472, http://dx.doi.org/10.1166/jnn.2018.16086.
[48] Jia, Caihong, Li, Jiachen, Yang, Guang, Chen, Yonghai, Zhang, Weifeng. Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions. NANOSCALE RESEARCH LETTERS[J]. 2018, 第 4 作者13(1): https://doaj.org/article/479ec0543d0f483c837259e85b2ce08a.
[49] Yu, Jinling, Zeng, Xiaolin, Zhang, Liguo, Yin, Chunming, Chen, Yonghai, Liu, Yu, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Inverse spin Hall effect induced by linearly polarized light in the topological insulator Bi2Se3. OPTICS EXPRESS[J]. 2018, 第 5 作者26(4): 4832-4841, https://www.webofscience.com/wos/woscc/full-record/WOS:000426268500098.
[50] Zeng, X L, Yu, J L, Cheng, S Y, Lai, Y F, Chen, Y H, Huang, W. Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation. JOURNAL OF APPLIED PHYSICS[J]. 2017, 121(19): http://dx.doi.org/10.1063/1.4983461.
[51] Jia, Caihong, Yin, Xiaoqian, Yang, Guang, Wu, Yonghui, Li, Jiachen, Chen, Yonghai, Zhang, Weifeng. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect. APPLIED PHYSICS LETTERS[J]. 2017, 第 6 作者111(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000413590200004.
[52] Qing Wu, Yu Liu, Hailong Wang, Yuan Li, Wei Huang, Jianhua Zhao, Yonghai Chen. Observation of spin-polarized photoconductivity in (Ga; Mn)As/GaAs heterojunction without. SCIENTIFIC REPORTS[J]. 2017, 第 7 作者7: 40558, http://ir.semi.ac.cn/handle/172111/28415.
[53] Fang, Yinglong, Li, Jiachen, Chen, Yonghai, Zhang, Weifeng, Jia, Caihong. Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO3: Nb/ZnO heterojunctions. PHYSICA B-CONDENSED MATTER[J]. 2017, 第 3 作者521: 69-72, http://dx.doi.org/10.1016/j.physb.2017.06.047.
[54] Yu, J L, Chen, Y H, Liu, Y, Cheng, S Y. Effects of Strain in Low-Dimensional Semiconductor Structures. NANOSCIENCE AND NANOTECHNOLOGY LETTERS. 2017, 9(7): 1066-1082, https://www.webofscience.com/wos/woscc/full-record/WOS:000410792700014.
[55] Guan, Hongming, Tang, Ning, Xu, Xiaolong, Shang, LiangLiang, Huang, Wei, Fu, Lei, Fang, Xianfa, Yu, Jiachen, Zhang, Caifeng, Zhang, Xiaoyue, Dai, Lun, Chen, Yonghai, Ge, Weikun, Shen, Bo. Photon wavelength dependent valley photocurrent in multilayer MoS2. PHYSICAL REVIEW B[J]. 2017, 第 12 作者96(24): http://ir.semi.ac.cn/handle/172111/28297.
[56] Zhu, Laipan, Huang, Wei, Renucci, Pierre, Marie, Xavier, Liu, Yu, Li, Yuan, Wu, Qing, Zhang, Yang, Xu, Bo, Lu, Yuan, Chen, Yonghai. Angular Dependence of the Spin Photocurrent in a Co-Fe-B/MgO/n-i-p GaAs Quantum-Well Structure. PHYSICAL REVIEW APPLIED[J]. 2017, 第 11 作者 通讯作者 8(6): http://dx.doi.org/10.1103/PhysRevApplied.8.064022.
[57] Yu, Jinling, Zeng, Xiaolin, Zhang, Liguo, He, Ke, Cheng, Shuying, Lai, Yunfeng, Huang, Wei, Chen, Yonghai, Yin, Chunming, Xue, Qikun. Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3. NANO LETTERS[J]. 2017, 第 8 作者17(12): 7878-7885, http://ir.semi.ac.cn/handle/172111/28296.
[58] Wu, Qing, Liu, Yu, Wang, Hailong, Li, Yuan, Huang, Wei, Zhao, Jianhua, Chen, Yonghai. Observation of spin-polarized photoconductivity in (Ga, Mn) As/GaAs heterojunction without magnetic field. SCIENTIFIC REPORTS[J]. 2017, 第 7 作者 通讯作者 7: http://dx.doi.org/10.1038/srep40558.
[59] Caihong Jia, Xiaoqian Yin, Guang Yang, Yonghui Wu, Jiachen Li, Yonghai Chen, Weifeng Zhang. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect. APPL. PHYS. LETT.[J]. 2017, 第 6 作者111: 113506, http://ir.semi.ac.cn/handle/172111/28295.
[60] J.L. Yu, Y.H. Chen, S.Y. Cheng, X.L. Zeng, Y. Liu, Y.F. Lai, Q. Zheng. Separation of the intrinsic and extrinsic mechanisms of the photo-induced anomalous Hall effect. PHYSICA E[J]. 2017, 90: 55–60, http://ir.semi.ac.cn/handle/172111/28298.
[61] Yinglong Fang, Jiachen Li, Yonghai Chen, Weifeng Zhang, Caihong Jia. Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO3:Nb/ZnO heterojunctions. PHYSICA B: PHYSICS OF CONDENSED MATTER. 2017, 第 3 作者521: 69-72, http://dx.doi.org/10.1016/j.physb.2017.06.047.
[62] Yang, GuanQing, Zhang, ShiZhu, Xu, Bo, Chen, YongHai, Wang, ZhanGuo. Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method. CHINESE PHYSICS B[J]. 2017, 第 4 作者26(6): 68103-068103, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/26/6/068103.
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[154] 刘俊朋, 曲胜春, 曾湘波, 许颖, 陈涌海, 王智杰, 周慧英, 王占国. 有机/无机复合体异质结太阳电池. 半导体学报[J]. 2007, 第 5 作者364-368, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096925.
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[156] 刘俊朋, 曲胜春, 许颖, 陈涌海, 曾湘波, 王智杰, 周慧英, 王占国. Photovoltaic and Electroluminescence Characters in Hybrid ZnO and Conjugated Polymer Bulk Heterojunction Devices. 中国物理快报：英文版[J]. 2007, 第 4 作者24(5): 1350-1353, http://lib.cqvip.com/Qikan/Article/Detail?id=25865716.
[157] 高玉竹, 龚秀英, 陈涌海, 吴俊. 截止波长12μm的InAS0．04Sb0．96／GaAs的熔体外延生长及特性研究. 光电子．激光[J]. 2007, 第 3 作者18(1): 67-70, http://lib.cqvip.com/Qikan/Article/Detail?id=24019278.
[158] 胡良均, 陈涌海, 叶小玲, 王占国. Mn离子注入InAs/GaAs量子点结构材料的光电性质研究. 物理学报[J]. 2007, 第 2 作者56(8): 4930-4935, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.56.4930.
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[160] 张冠杰, 陈涌海, 姚江宏, 舒强, 刘如彬, 舒永春, 许京军, 王占国. InAlAs量子点材料的AFM和拉曼散射研究. 激光与光电子学进展[J]. 2006, 第 2 作者43(4): 68-72, http://ir.semi.ac.cn/handle/172111/16665.
[161] Zhao Lei, Chen Yonghai, Zuo Yuhua, Wang Haining, Shi Wenhua. Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy. SPECTROSCOPY AND SPECTRAL ANALYSIS[J]. 2006, 第 2 作者26(7): 1185-1189, http://ir.semi.ac.cn/handle/172111/10444.
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[163] 王占国, 许京军, 张冠杰, 徐波, 陈涌海, 姚江宏, 林耀望, 舒永春, 皮彪, 邢晓东, 刘如彬, 舒强. 不同淀积厚度InAs量子点的喇曼散射. 半导体学报[J]. 2006, 第 5 作者27(6): 1012-1015, http://lib.cqvip.com/Qikan/Article/Detail?id=22152544.
[164] Zhao Lei, Chen Yonghai, Zuo Yuhua, Wang Haining, Shi Wenhua. Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy. SPECTROSCOPY AND SPECTRAL ANALYSIS[J]. 2006, 第 2 作者26(7): 1185-1189, http://ir.semi.ac.cn/handle/172111/10444.
[165] 陈涌海. 砷化镓基量子级联激光器研究取得重要进展. 中国基础科学[J]. 2005, 第 1 作者7(3): 30-30, http://lib.cqvip.com/Qikan/Article/Detail?id=15915849.
[166] 陈涌海, 杨少延, 王占国. 应变异质结构中超薄中间层的应变协调作用. 半导体学报[J]. 2005, 第 1 作者26(9): 1740-1743, http://lib.cqvip.com/Qikan/Article/Detail?id=20260618.
[167] 金峰, 鲁华祥, 李凯, 陈涌海, 王占国. 量子点的原子力显微镜测试结果分析：数学形态学的实现. 半导体学报[J]. 2005, 第 4 作者26(11): 2120-2126, http://lib.cqvip.com/Qikan/Article/Detail?id=20622828.
[168] 钱家骏, 叶小玲, 陈涌海, 徐波, 韩勤, 王占国. InAs/GaAs多层堆垛量子点激光器的激射特性. 半导体学报[J]. 2005, 第 3 作者184-188, http://lib.cqvip.com/Qikan/Article/Detail?id=1000267853.
[169] 杨少延, 柴春林, 周剑平, 刘志凯, 陈涌海, 陈诺夫, 王占国. 稀土功能薄膜的离子束外延法制备生长研究. 中国稀土学报[J]. 2005, 第 5 作者23(5): 576-581, http://lib.cqvip.com/Qikan/Article/Detail?id=20413521.
[170] 雷文, 陈涌海, 程伟明, 车晓玲, 刘俊歧, 黄秀颀, 王占国. InP基应变自组装纳米材料及其光电子器件研究进展. 微纳电子技术[J]. 2004, 第 2 作者41(4): 8-17, http://lib.cqvip.com/Qikan/Article/Detail?id=9551530.
[171] 王春华, 陈涌海, 王占国. 室温和350℃下注Mn的GaAs／AIGaAs超晶格的磁学性质. 半导体学报[J]. 2004, 第 2 作者25(10): 1253-1257, http://lib.cqvip.com/Qikan/Article/Detail?id=10865183.
[172] 王春华, 陈涌海, 王占国. 室温和350℃下注Mn的GaAs/AlGaAs超晶格的磁学性质. 半导体学报[J]. 2004, 第 2 作者25(10): 1253-1257, http://ir.semi.ac.cn/handle/172111/17289.
[173] 钱家骏, 徐波, 陈涌海, 叶小玲, 韩勤, 王占国. 应变自组装InAs／GaAs量子点材料与器件光学性质研究. 半导体学报[J]. 2003, 第 3 作者24(B05): 51-55, http://lib.cqvip.com/Qikan/Article/Detail?id=9068873.
[174] 陈涌海, 叶小玲, 王占国. 量子阱平面光学各向异性的偏振差分反射谱研究. 固体电子学研究与进展[J]. 2002, 第 1 作者22(4): 412-416, http://lib.cqvip.com/Qikan/Article/Detail?id=7294312.
[175] 张志成, 杨少延, 陈涌海, 王占国. 应变异质外延中的柔性衬底技术. 金属材料研究[J]. 2002, 第 3 作者28(2): 1-6, http://lib.cqvip.com/Qikan/Article/Detail?id=6435553.
[176] 陈涌海, 韩德俊, 刘超, 李国辉, 姬成周, 叶小玲. InGaAs／InGaAsP量子阱激光器材料带隙蓝移研究. 北京师范大学学报：自然科学版[J]. 2001, 第 1 作者37(2): 170-173, http://lib.cqvip.com/Qikan/Article/Detail?id=5234251.
[177] 成步文, 陈涌海, 罗丽萍, 王启明, 杨沁清, 王吉政, 李成, 王红杰, 余金中. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing. 半导体学报[J]. 2000, 第 2 作者21(1): 18, http://ir.semi.ac.cn/handle/172111/18845.
[178] 徐波, 陈涌海, 丁鼎, 钱家骏, 张金福, 王占国, 张秀兰, 叶小玲, 刘峰奇, 韩勤, 梁基本. 1.08μm InAs／GaAs量子点激光器光学特性研究. 功能材料与器件学报[J]. 2000, 第 2 作者6(3): 243-247, http://lib.cqvip.com/Qikan/Article/Detail?id=4567083.
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发表著作
（1） 纳米半导体技术，Nanoscale semiconductor technique，化学工业出版社，2006-04，第2作者
科研活动
科研项目
（ 1 ） 半导体量子结构自旋分裂效应及其调控, 主持, 国家级, 2010-01--2015-12
（ 2 ） 中科院****项目, 主持, 国家级, 2012-01--2014-12
（ 3 ） 量子输运中的自旋轨道耦合效应及其调控, 主持, 国家级, 2011-11--2016-08
（ 4 ） 量子级联材料能带工程设计及性能预测, 参与, 国家级, 2012-09--2017-08
（ 5 ） 圆偏振光激发的反常霍尔效应研究, 主持, 国家级, 2015-01--2018-12
（ 6 ） 中远红外及THz 量子级联激光器研究, 参与, 国家级, 2016-07--2019-12
（ 7 ） 4-10微米连续可调红外激光光谱仪, 参与, 国家级, 2017-01--2021-12
（ 8 ） 中远红外量子级联激光器及应用, 参与, 国家级, 2018-06--2023-04
（ 9 ） 中远红外量子级联激光器结构演化及性能预测, 主持, 国家级, 2020-01--2024-12
（ 10 ） 高性能中远红外量子级联激光器基础理论与关键技术, 主持, 国家级, 2019-01--2024-12
（ 2 ） 中科院****项目, 主持, 国家级, 2012-01--2014-12
（ 3 ） 量子输运中的自旋轨道耦合效应及其调控, 主持, 国家级, 2011-11--2016-08
（ 4 ） 量子级联材料能带工程设计及性能预测, 参与, 国家级, 2012-09--2017-08
（ 5 ） 圆偏振光激发的反常霍尔效应研究, 主持, 国家级, 2015-01--2018-12
（ 6 ） 中远红外及THz 量子级联激光器研究, 参与, 国家级, 2016-07--2019-12
（ 7 ） 4-10微米连续可调红外激光光谱仪, 参与, 国家级, 2017-01--2021-12
（ 8 ） 中远红外量子级联激光器及应用, 参与, 国家级, 2018-06--2023-04
（ 9 ） 中远红外量子级联激光器结构演化及性能预测, 主持, 国家级, 2020-01--2024-12
（ 10 ） 高性能中远红外量子级联激光器基础理论与关键技术, 主持, 国家级, 2019-01--2024-12
指导学生
已指导学生
周立 硕士研究生 080501-材料物理与化学
丁飞 博士研究生 080501-材料物理与化学
郝国栋 博士研究生 080501-材料物理与化学
刘根华 博士研究生 080501-材料物理与化学
贾彩虹 博士研究生 080501-材料物理与化学
周晓龙 博士研究生 080501-材料物理与化学
周冠宇 博士研究生 080501-材料物理与化学
郭玉冰 硕士研究生 080501-材料物理与化学
蒋崇云 博士研究生 080501-材料物理与化学
俞金玲 博士研究生 080501-材料物理与化学
马惠 博士研究生 080501-材料物理与化学
武树杰 博士研究生 080501-材料物理与化学
高寒松 博士研究生 080501-材料物理与化学
张宏毅 博士研究生 080501-材料物理与化学
秦旭东 博士研究生 080501-材料物理与化学
朱来攀 博士研究生 080501-材料物理与化学
李远 博士研究生 080501-材料物理与化学
邬庆 博士研究生 080501-材料物理与化学
杨冠卿 博士研究生 080501-材料物理与化学
黄威 博士研究生 080501-材料物理与化学
于天 博士研究生 080501-材料物理与化学
现指导学生
张洋 博士研究生 080501-材料物理与化学
黎昆 硕士研究生 080501-材料物理与化学
曾晓琳 博士研究生 080501-材料物理与化学
吴静 博士研究生 0805Z2-半导体材料与器件
朱申波 硕士研究生 085204-材料工程
研究领域
1）半导体低维结构材料和纳米材料研究，主要包括应变自组织半导体量子点（线）材料、纳米线材料、纳米颗粒等材料的光学性质研究，以及新型光电器件探索；
2 ）半导体材料的光学偏振特性研究，主要利用反射差分谱等偏振调制光谱技术，研究半导体材料、量子结构材料的光学各向异性及其物理机制；
3）新型半导体光谱技术及应用，主要包括反射差分谱、微区光谱、时间分辨光谱等光谱技术在半导体材料和物理研究中的应用；
4）半导体自旋电子学研究，主要采用圆偏振自旋光电流等技术研究半导体材料中自旋轨道耦合相关的自旋性质，半导体材料中的自旋操控等。
2 ）半导体材料的光学偏振特性研究，主要利用反射差分谱等偏振调制光谱技术，研究半导体材料、量子结构材料的光学各向异性及其物理机制；
3）新型半导体光谱技术及应用，主要包括反射差分谱、微区光谱、时间分辨光谱等光谱技术在半导体材料和物理研究中的应用；
4）半导体自旋电子学研究，主要采用圆偏振自旋光电流等技术研究半导体材料中自旋轨道耦合相关的自旋性质，半导体材料中的自旋操控等。
成果与奖励
先后主持了国家重点基础规划项目和课题、国家自然科学基金重大项目和面上项目、中科院重点项目等十余个科研项目。在国际知名学术刊物上发表SCI论文百余篇，获得国家授权发明专利十余项。曾获2004年国家重点基础研究计划（973）先进个人称号、2006年度杰出青年基金获得者、2009年新世纪百千万人才工程国家级人选、2011年度中科院****入选者等奖励和荣誉。
主要学术成绩
1）在半导体低维结构的光学各向异性研究方面，将反射差分谱应用于半导体界面性质研究，揭示了界面原子偏析、界面结构和应变对量子阱光学偏振性质的重要影响；基于反射差分谱（RDS）技术，提出了一种测量量子阱激子各向异性交换分裂的方法，并演示了应变对激子精细分裂的调控作用; 基于RDS技术，建立了半导体衬底材料表面亚损伤和内应力分布的新型表征技术，可用于我国晶片材料相关高技术企业的产品检测。
2）在半导体纳米材料研究方面，提出并证实了组份调制表面上量子线生长的新模型；创新采用反射差分谱技术，观察到了InAs量子点生长演化中的新现象，揭示了应变自组织生长的物理机制；发现液滴外延生长中的临界现象，提出了浸润层耗尽生长的液滴外延生长模型；针对量子点发光行为，提出了多模尺寸分布量子点载流子通道数学模型、以及考虑了量子点隧穿效应的速率方程模型等。
3）在半导体自旋电子学研究方面，利用单轴应变下的圆偏振自旋光电流（CPGE）技术，首次得到AlGaN/GaN异质结构2DEG体系中自旋轨道耦合系数，首次在常温和宏观尺度下观察到AlGaN/GaN、GaAs/AlGaAs异质结构中由二维电子气(2DEG)自旋流产生的横向霍尔电流（逆自旋霍尔效应），提出了一种测量净自旋流的光电流方法等。
2）在半导体纳米材料研究方面，提出并证实了组份调制表面上量子线生长的新模型；创新采用反射差分谱技术，观察到了InAs量子点生长演化中的新现象，揭示了应变自组织生长的物理机制；发现液滴外延生长中的临界现象，提出了浸润层耗尽生长的液滴外延生长模型；针对量子点发光行为，提出了多模尺寸分布量子点载流子通道数学模型、以及考虑了量子点隧穿效应的速率方程模型等。
3）在半导体自旋电子学研究方面，利用单轴应变下的圆偏振自旋光电流（CPGE）技术，首次得到AlGaN/GaN异质结构2DEG体系中自旋轨道耦合系数，首次在常温和宏观尺度下观察到AlGaN/GaN、GaAs/AlGaAs异质结构中由二维电子气(2DEG)自旋流产生的横向霍尔电流（逆自旋霍尔效应），提出了一种测量净自旋流的光电流方法等。
招生信息
下面写的招生专业是“材料物理与化学”，是这网站系统自动生成的，其实我很想把它改成 “凝聚态物理”。然而更重要的是，不管是你是什么专业，如果你有独立钻研精神，实验动手能力或者理论计算能力强，对物理研究感兴趣，计划以科研为未来职业，欢迎你加入我的研究团队 ^_^
招生专业
080501-材料物理与化学
招生方向
半导体材料，半导体光谱技术，半导体自旋电子学