半导体光电子材料与器件

   

080501-材料物理与化学
080903-微电子学与固体电子学
085600-材料与化工

氮化物材料制备技术研究，深紫外LED材料生长和器件制备技术
大功率白光LED器件制备技术，氮化物光电子器件
GaN基光电子材料和器件

2000-09--2003-06   中国科学院半导体研究所   博士
1998-09--2000-06   西北大学   硕士
1994-09--1998-06   西北大学   学士

   

2003-07~现在, 中国科学院半导体研究所, 助研/副研究员/研究员

2016-06-01-今,中国照明学会农业照明专业委员会, 副主任委员
2016-04-16-今,中国材料研究学会, 理事
2016-04-01-今,中国微米纳米技 术学会青年工作委员会, 委员
2014-07-01-今,北京市第三代半导体材料及应用工程技术研究中心, 主任
2010-12-02-今,中国科学院半导体照明研发中心, 副主任

宽禁带半导体发光材料
材料科学与工程讲座

   

（1） 高光效长寿命半导体照明关键技术与产业化, 一等奖, 国家级, 2019
（2） 氮化镓基紫外与深紫外LED关键技术, 二等奖, 国家级, 2015
（3） 低热阻高光效蓝宝石基GaN LED材料外延及芯片技术, 二等奖, 国家级, 2014
（4） 高性能大功率LEDs外延、芯片及应用集成技术, 一等奖, 省级, 2012
（5） 高性能GaN外延材料, 二等奖, 省级, 2012

[1] 伊晓燕, 王蕴玉, 刘志强, 梁萌, 王兵, 任芳, 尹越, 王军喜, 李晋闽. 一种基于非晶衬底的氮化物薄膜结构及其制备方法. CN: [[[CN111697115A]]], [[["2020-09-22"]]].
[2] 伊晓燕, 林辰, 詹腾, 刘志强, 王军喜, 李晋闽. 氮化镓和石墨烯混合集成光电芯片及其制备方法. CN: CN113410192B, 2023-08-15.
[3] 闫建昌, 刘春岩, 薛斌, 郭亚楠, 王军喜, 李晋闽. 紫外LED匀光装置及其应用. CN: CN110680937B, 2023-05-02.
[4] 尹越, 林学春, 刘志强, 梁萌, 伊晓燕, 王军喜, 李晋闽. 氮化物薄膜结构及其制备方法. CN: CN115881864A, 2023-03-31.
[5] 王军喜, 王大地, 郭亚楠, 刘志彬, 闫建昌. 一种AlGaN基紫外激光器的生长方法. CN: CN113445130B, 2023-02-24.
[6] 孙雪娇, 魏学成, 刘春岩, 王军喜, 闫丹. 紫外LED模组封装结构及封装方法. CN: CN115579444A, 2023-01-06.
[7] 刘春岩, 闫建昌, 薛斌, 王军喜, 李晋闽. 一种通用LED测试装置及测试方法. CN: CN113358998B, 2023-01-06.
[8] 姚然, 杨华, 宋昌斌, 郑怀文, 吕小鸿, 王军喜. 用于微藻生长的光生物反应器及方法. CN: CN113150975B, 2023-01-03.
[9] 伊晓燕, 宋武睿, 刘志强, 梁萌, 张逸韵, 王军喜, 李晋闽. 基于石墨烯和介质DBR的垂直发射发光器及制备方法. CN: CN115498074A, 2022-12-20.
[10] 伊晓燕, 宋武睿, 刘志强, 梁萌, 张逸韵, 王军喜, 李晋闽. 氮化物发光器件制备方法. CN: CN115498073A, 2022-12-20.
[11] 杨华, 郑怀文, 李燕, 于飞, 刘喆, 姚然, 宋昌斌, 伊晓燕, 李晋闽, 王军喜. 用于光医疗的柔性LED封装结构. CN: CN115377276A, 2022-11-22.
[12] 刘志强, 冯涛, 梁萌, 伊晓燕, 王军喜, 李晋闽. 基于LED可见光的定位方法、装置、电子设备及存储介质. CN: CN115372898A, 2022-11-22.
[13] 刘志强, 闫岩, 张硕, 伊晓燕, 王军喜, 李晋闽. GaN纳米线的制备方法和GaN纳米线. CN: CN115369379A, 2022-11-22.
[14] 刘志强, 冯涛, 梁萌, 伊晓燕, 王军喜, 李晋闽. 肖特基势垒二极管及其制备方法. CN: CN115347052A, 2022-11-15.
[15] 伊晓燕, 周斌茹, 张逸韵, 刘志强, 王军喜, 李晋闽. 基于多色谐振腔发光二极管的生物探针及其制备方法. CN: CN115224168A, 2022-10-21.
[16] 伊晓燕, 周斌茹, 张逸韵, 詹腾, 刘志强, 王军喜, 李晋闽. 生物探针及其制备方法. CN: CN115105022A, 2022-09-27.
[17] 伊晓燕, 宋武睿, 刘志强, 梁萌, 王军喜, 李晋闽. 垂直腔面发射激光器及其制备方法. CN: CN115000810A, 2022-09-02.
[18] 伊晓燕, 周斌茹, 詹腾, 刘志强, 王军喜, 李晋闽. 用于神经调控的光电集成模块. CN: CN114949618A, 2022-08-30.
[19] 冉军学, 魏同波, 王军喜. 半导体pn结构及其制备方法. CN: CN114899220A, 2022-08-12.
[20] 伊晓燕. 基于多色谐振腔发光二极管的生物探针及其制备方法. 202210864222.2, 2022-07-20.
[21] 刘志强, 冯涛, 梁萌, 伊晓燕, 张硕, 王军喜, 李晋闽. 石墨烯作为插入层的GaN/AlGaN异质结构及其制备方法. CN: CN114759088A, 2022-07-15.
[22] 伊晓燕. 生物探针及其制备方法. 202210707834.0, 2022-06-21.
[23] 刘春岩, 孙雪娇, 魏学成, 闫建昌, 王军喜. 紫外LED模组. CN: CN114650634A, 2022-06-21.
[24] 王军喜, 冉军学, 魏同波. 半导体pn结构及其制备方法. CN202210555452.0, 2022-05-19.
[25] 王军喜, 王新维, 张宁, 魏学成. p型GaN欧姆接触的制备方法. CN: CN114420559A, 2022-04-29.
[26] 王军喜, 王新维, 张宁, 魏学成. LED的制备方法及LED外延片. CN: CN114284403A, 2022-04-05.
[27] 魏同波, 常洪亮, 闫建昌, 王军喜, 李晋闽. 一种在异质衬底上生长高质量氮化铝薄膜的方法. CN: CN114284397A, 2022-04-05.
[28] 薛斌, 闫建昌, 刘春岩, 张宁, 王军喜, 李晋闽. 可穿戴式无创光疗装置. CN: CN114146317A, 2022-03-08.
[29] 王军喜, 刘春岩, 孙雪娇, 魏学成, 闫建昌. 紫外LED模组. CN202210199434.3, 2022-03-02.
[30] 王军喜, 魏学成, 王新维, 张宁. p型GaN欧姆接触的制备方法. CN202210061899.2, 2022-01-19.
[31] 艾玉杰, 张韵, 杨帅, 孙莉莉, 程哲, 张连, 贾丽芳, 王军喜, 李晋闽. 兰姆波谐振器及其制备方法. CN: CN113904652A, 2022-01-07.
[32] 段瑞飞, 曾一平, 王军喜, 冉军学, 胡国新, 羊建坤, 梁勇, 路红喜, 李晋闽. 一种化学气相沉积装置. CN: CN113818012A, 2021-12-21.
[33] 艾玉杰, 张韵, 杨帅, 孙莉莉, 程哲, 张连, 贾丽芳, 王军喜, 李晋闽. 兰姆波谐振器及其制备方法. CN: CN113794462A, 2021-12-14.
[34] 郭亚楠, 蔡听松, 刘志彬, 闫建昌, 王军喜. 极性交替AlN模板的制备方法. CN: CN113539791A, 2021-10-22.
[35] 郭亚楠, 闫建昌, 刘志彬, 王军喜, 李晋闽. 具有p型极化掺杂的III族氮化物光电子器件. CN: CN111710762B, 2021-10-15.
[36] 王军喜, 王大地, 郭亚楠, 刘志彬, 闫建昌. 一种AlGaN基紫外激光器的生长方法. CN: CN113445130A, 2021-09-28.
[37] 蔡听松",null,null,null,"王军喜. 一种AlN薄膜的制备方法. CN: CN113451457A, 2021-09-28.
[38] 王军喜, 张睿洁, 郭亚楠, 刘志彬, 闫建昌. AlGaN薄膜的制备方法. CN: CN113437186A, 2021-09-24.
[39] 刘志强, 冯涛, 梁萌, 伊晓燕, 王军喜, 李晋闽. 氮化物生长方法. CN: CN113394076A, 2021-09-14.
[40] 刘志强, 任芳, 梁萌, 伊晓燕, 王军喜, 李晋闽. 发光二极管的外延结构及其制备方法. CN: CN113394318A, 2021-09-14.
[41] 刘春岩, 闫建昌, 薛斌, 王军喜, 李晋闽. 一种通用LED测试装置及测试方法. CN: CN113358998A, 2021-09-07.
[42] 伊晓燕, 张硕, 刘志强, 梁萌, 冯涛, 任芳, 王蕴玉, 王军喜, 李晋闽. LED/ZnO纳米线阵列集成的光电晶体管芯片及制备方法. CN: CN111816729B, 2021-08-31.
[43] 伊晓燕, 张兴飞, 张逸韵, 王军喜, 李晋闽. 基于平面衬底的倒装RCLED芯片及其制备方法. CN: CN113299806A, 2021-08-24.
[44] 王军喜, 李燕, 杨宇铭, 杨华, 伊晓燕, 李晋闽. LED陶瓷封装基板及其制备方法. CN: CN113299814A, 2021-08-24.
[45] 郭亚楠, 闫建昌, 王军喜, 李晋闽. 反极性垂直发光二极管及其制备方法. CN: CN110808319B, 2021-08-17.
[46] 杨华, 郑怀文, 李燕, 于飞, 姚然, 宋昌斌, 伊晓燕, 李晋闽, 王军喜. 一种用于光医疗的可穿戴设备. CN: CN113209489A, 2021-08-06.
[47] 孙雪娇, 魏学成, 王军喜, 张宁. 基于钙钛矿量子点荧光粉的激光照明系统. CN: CN113175629A, 2021-07-27.
[48] 姚然, 杨华, 宋昌斌, 郑怀文, 吕小鸿, 王军喜. 用于微藻生长的光生物反应器及方法. CN: CN113150975A, 2021-07-23.
[49] 郭亚楠, 刘志彬, 闫建昌, 李晋闽, 王军喜. 提高LED倒装芯片光提取效率的方法. CN: CN111710765B, 2021-05-18.
[50] 郭亮, 魏同波, 冉军学, 王军喜. 多腔室半导体薄膜外延装置. CN: CN112795983A, 2021-05-14.
[51] 刘春岩, 闫建昌, 王军喜, 李晋闽. 紫外LED封装结构及其封装方法. CN: CN112750934A, 2021-05-04.
[52] 王军喜, 冯梁森, 张宁, 李晋闽. 调制带宽增强的可见光通信光源及其制备方法. CN: CN109599410B, 2021-03-26.
[53] 刘立莉, 宋昌斌, 于飞, 杨华, 王军喜. 贴片LED封装光源及制备方法. CN: CN112435999A, 2021-03-02.
[54] 刘志彬, 郭亚楠, 闫建昌, 李晋闽, 王军喜. 高质量AlN模板的应力与晶圆翘曲控制方法. CN: CN111710595A, 2020-09-25.
[55] 郭亚楠, 刘志彬, 闫建昌, 李晋闽, 王军喜. 高质量低应力AlN图形模板的制备方法. CN: CN111710594A, 2020-09-25.
[56] 刘志彬, 郭亚楠, 闫建昌, 李晋闽, 王军喜. 极性可控的高质量AlN模板制备方法. CN: CN111676451A, 2020-09-18.
[57] 刘立莉, 宋昌斌, 于飞, 杨华, 王军喜. 一种LED封装管的测试板及测试方法. CN: CN111624454A, 2020-09-04.
[58] 闫建昌, 刘春岩, 王军喜, 李晋闽. 带有光强自动反馈校正功能的紫外光源系统及其应用. CN: CN111542152A, 2020-08-14.
[59] 闫建昌, 刘春岩, 薛斌, 郭亚楠, 王军喜, 李晋闽. 紫外LED匀光装置. CN: CN211214531U, 2020-08-11.
[60] 刘春岩, 闫建昌, 郭亚楠, 王军喜, 李晋闽. 基于紫外LED杀菌新风系统. CN: CN211204334U, 2020-08-07.
[61] 刘春岩, 闫建昌, 王军喜, 李晋闽. 一种陶瓷基板及其封装方法. CN: CN111463334A, 2020-07-28.
[62] 刘春岩, 闫建昌, 王军喜, 李晋闽. 便携式紫外LED杀菌消毒盒. CN: CN111388705A, 2020-07-10.
[63] 冉军学, 王军喜. AlN薄膜的制备方法. CN: CN109065438B, 2020-07-07.
[64] 伊晓燕, 林辰, 詹腾, 刘志强, 王军喜, 李晋闽. 无线供能柔性发光系统及其无线能量接收端装置制备方法. CN: CN111355308A, 2020-06-30.
[65] 魏同波, 常洪亮, 闫建昌, 王军喜. 在图形衬底上生长氮化物薄膜结构及其方法. CN: CN111341648A, 2020-06-26.
[66] 刘志强, 任芳, 张硕, 尹越, 王蕴玉, 梁萌, 伊晓燕, 袁国栋, 王军喜, 李晋闽. 基于绝缘衬底的纳米柱LED芯片及其制备方法. CN: CN111326610A, 2020-06-23.
[67] 郑怀文, 杨华, 伊晓燕, 王军喜, 李晋闽. 荧光材料发热测试装置. CN: CN111323398A, 2020-06-23.
[68] 宋昌斌, 郑怀文, 于飞, 杨华, 王军喜. 用于水产养殖正N边形智能LED导光板光照装置及制造方法. CN: CN111271657A, 2020-06-12.
[69] 姬小利, 魏同波, 王军喜, 李晋闽, 杨富华. GaN基常关型高电子迁移率晶体管及制备方法. CN: CN111243954A, 2020-06-05.
[70] 薛斌, 闫建昌, 王军喜, 李晋闽. 具有消毒功能的便携式充电装置. CN: CN210577842U, 2020-05-19.
[71] 闫建昌, 刘春岩, 薛斌, 郭亚楠, 王军喜, 李晋闽. 紫外LED匀光装置及其应用. CN: CN110680937A, 2020-01-14.
[72] 刘春岩, 闫建昌, 郭亚楠, 王军喜, 李晋闽. 基于紫外LED杀菌新风系统及应用. CN: CN110657545A, 2020-01-07.
[73] 薛斌, 闫建昌, 王军喜, 李晋闽. 具有消毒功能的便携式充电装置及应用. CN: CN110417097A, 2019-11-05.
[74] 刘喆, 梁冬冬, 王军喜, 李晋闽. 柔性折叠的LED光动力治疗仪. CN: CN209500547U, 2019-10-18.
[75] 黄鹏, 袁国栋, 王军喜, 李晋闽. 电池负极材料及其制备方法、锂电池. CN: CN110336028A, 2019-10-15.
[76] 王军喜, 杨宇铭, 杨华, 郑怀文, 李燕. 一种近距离匀光LED封装结构. CN: CN110323322A, 2019-10-11.
[77] 郑怀文, 杨华, 伊晓燕, 王军喜, 李晋闽. 一种低热阻电路板. CN: CN110290635A, 2019-09-27.
[78] 闫建昌, 刘春岩, 郭亚楠, 魏学成, 李晋闽, 王军喜. 基于人体识别深紫外LED杀菌消毒系统. CN: CN110269950A, 2019-09-24.
[79] 杨华, 李燕, 杨宇铭, 郑怀文, 于飞, 裴艳荣, 李璟, 伊晓燕, 王军喜, 李晋闽. 匀光照明模组及其应用. CN: CN110260268A, 2019-09-20.
[80] 姬小利, 谭晓宇, 魏同波, 王军喜, 杨富华, 李晋闽. 基于多孔AlGaN的紫外分布布拉格反射镜及其制备方法. CN: CN110190511A, 2019-08-30.
[81] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 一种无线充电系统. CN: CN209329789U, 2019-08-30.
[82] 冉军学, 魏同波, 闫建昌, 王军喜. 化合物半导体及其外延方法. CN: CN110164757A, 2019-08-23.
[83] 闫建昌, 郭亚楠, 王军喜, 李晋闽. LED倒装芯片的图形化衬底及制备方法. CN: CN110098297A, 2019-08-06.
[84] 冉军学, 魏同波, 闫建昌, 王军喜. 肖特基二极管及其制备方法、半导体功率器件. CN: CN110071177A, 2019-07-30.
[85] 袁国栋, 王琦, 赵帅, 刘文强, 王军喜, 李晋闽. 氮化物材料的湿法腐蚀方法. CN: CN110010461A, 2019-07-12.
[86] 黄鹏, 袁国栋, 王军喜, 李晋闽. 硅-石墨烯电池负极材料及其制备方法、锂电池. CN: CN110010864A, 2019-07-12.
[87] 黄鹏, 袁国栋, 王军喜, 李晋闽. 非晶氮化镓/石墨烯电极材料、制备方法及超级电容器. CN: CN109994323A, 2019-07-09.
[88] 赵捷, 魏同波, 魏学成, 王军喜, 李晋闽. 基于类金字塔型双波长结构的单芯片白光LED及其制备方法. CN: CN109904292A, 2019-06-18.
[89] 赵捷, 魏同波, 魏学成, 王军喜, 李晋闽. 基于类金字塔型的显指可调的单芯片白光LED及其制备方法. CN: CN109841712A, 2019-06-04.
[90] 魏同波, 赵捷, 魏学成, 王军喜, 李晋闽. 基于非辐射共振能量转移机制的白光LED及其制备方法. CN: CN109841711A, 2019-06-04.
[91] 刘乃鑫, 孙雪娇, 魏学成, 魏同波, 王军喜, 李晋闽. 载气辅助PVT法制备宽禁带半导体单晶材料的装置及方法. CN: CN109825875A, 2019-05-31.
[92] 刘乃鑫, 魏同波, 魏学成, 王军喜, 李晋闽. 基于物理气相传输法的温度场控制装置及温控方法. CN: CN109666970A, 2019-04-23.
[93] 张宁, 冯梁森, 魏学成, 王军喜, 李晋闽. 提升氮化物材料P型掺杂效率的方法及氮化物薄膜. CN: CN109638118A, 2019-04-16.
[94] 王军喜, 冯梁森, 张宁, 李晋闽. 调制带宽增强的可见光通信光源及其制备方法. CN: CN109599410A, 2019-04-09.
[95] 张宁, 冯梁森, 魏学成, 王军喜, 李晋闽. 基于Si衬底的N极性面富In组分氮化物材料生长方法. CN: CN109599462A, 2019-04-09.
[96] 梁冬冬, 魏同波, 闫建昌, 王军喜. 基于非晶衬底生长氮化物的方法及结构. CN: CN109585270A, 2019-04-05.
[97] 刘志强, 程成, 伊晓燕, 张勇, 王军喜, 李晋闽. ZnO/GaN异质结纳米线光开关及其制备方法. CN: CN109524490A, 2019-03-26.
[98] 刘乃鑫, 魏同波, 魏学成, 王军喜, 李晋闽. 透明单晶AlN的制备方法及衬底、紫外发光器件. CN: CN109461644A, 2019-03-12.
[99] 宋昌斌, 刘立莉, 杨华, 王军喜. 智能诱杀与驱虫一体化LED灯装置. CN: CN109287029A, 2019-01-29.
[100] 常洪亮, 魏同波, 闫建昌, 王军喜. 在图形衬底上生长氮化物薄膜的方法. CN: CN109285758A, 2019-01-29.
[101] 王军喜, 张翔, 魏同波, 李晋闽. 垂直金字塔结构LED及其制备方法. CN: CN109166948A, 2019-01-08.
[102] 王军喜, 张亮, 郭亚楠, 吴清清, 闫建昌. 一种基于多孔外延模板的紫外发光二极管及其制作方法. CN: CN108922947A, 2018-11-30.
[103] 闫建昌, 张亮, 郭亚楠, 吴清清, 王军喜. 一种垂直结构发光二极管芯片的制作方法. CN: CN108878604A, 2018-11-23.
[104] 闫建昌, 张亮, 郭亚楠, 吴清清, 王军喜. 一种垂直结构发光二极管芯片的制作方法. CN: CN108878598A, 2018-11-23.
[105] 刘喆, 冯梁森, 张宁, 王军喜, 李晋闽. 制备氮化镓基纳米环结构的方法. CN: CN108682723A, 2018-10-19.
[106] 魏同波, 张翔, 闫建昌, 王军喜, 李晋闽. 基于Ga 2 O 3 衬底的垂直结构紫外LED及其制备方法. 中国: CN108630792A, 2018-10-09.
[107] 魏同波, 张翔, 闫建昌, 王军喜, 李晋闽. 基于Ga 2 O 3 衬底的垂直结构紫外LED及其制备方法. CN: CN108630792A, 2018-10-09.
[108] 张韵, 赵璐, 艾玉杰, 孙莉莉, 杨帅, 程哲, 张连, 贾利芳, 王军喜. GaN基LED器件. CN: CN207765474U, 2018-08-24.
[109] 魏同波, 赵捷, 魏学成, 王军喜, 李晋闽. 显指可调的无荧光粉单芯片白光LED器件及其制备方法. CN: CN108389941A, 2018-08-10.
[110] 袁国栋, 刘文强, 王琦, 王军喜, 李晋闽. 无机卤化铋钙钛矿电池及其制备方法. CN: CN108258119A, 2018-07-06.
[111] 刘喆, 梁冬冬, 薛斌, 王军喜, 李晋闽. 采用氧化铟锡作为插入层的反射镜及其制备方法. CN: CN108198925A, 2018-06-22.
[112] 张韵, 赵璐, 艾玉杰, 孙莉莉, 杨帅, 程哲, 张连, 贾利芳, 王军喜. GaN基LED器件及其制备方法. CN: CN108110097A, 2018-06-01.
[113] 袁国栋, 刘文强, 王琦, 王军喜, 李晋闽. 含有机无机杂化钙钛矿单晶发光层的钙钛矿LED及制备方法. CN: CN108091768A, 2018-05-29.
[114] 刘立莉, 宋昌斌, 王军喜, 杨华, 谢海忠, 梁萌. LED光源的应用方法及装置. CN: CN107889308A, 2018-04-06.
[115] 王军喜, 张翔, 魏同波, 李晋闽. GaN基垂直LED结构及其制备方法. CN: CN107833945A, 2018-03-23.
[116] 艾玉杰, 杨帅, 张韵, 孙莉莉, 程哲, 张连, 贾丽芳, 王军喜, 李晋闽. 声表面波谐振器、滤波器及其制备方法. CN: CN107634734A, 2018-01-26.
[117] 杨华, 卢鹏志, 谢海忠, 于飞, 郑怀文, 薛斌, 伊晓燕, 王军喜, 王国宏, 李晋闽. 发光二极管封装结构. CN: CN107482099A, 2017-12-15.
[118] 李喜林, 马平, 刘波亭, 王军喜, 李晋闽. 包含P型超晶格的增强型高电子迁移率晶体管及制备方法. CN: CN107393956A, 2017-11-24.
[119] 袁国栋, 吴瑞伟, 王克超, 李晋闽, 王军喜. 太阳能电池、其发射结以及制备方法. CN: CN107293612A, 2017-10-24.
[120] 谢海忠, 闫建昌, 魏学成, 魏同波, 宋昌斌, 张韵, 王军喜, 李晋闽. 芯片尺寸级深紫外发光二极管共晶封装方法. CN: CN107256911A, 2017-10-17.
[121] 王兵, 王蕴玉, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 一种催化CVD法自生长石墨烯透明导电薄膜的方法. CN: CN107215858A, 2017-09-29.
[122] 郭恩卿, 伊晓燕, 刘志强, 王良臣, 王军喜, 李晋闽. 一种微LED器件阵列单元的制作方法. CN: CN107146835A, 2017-09-08.
[123] 闫建昌, 谢海忠, 王军喜, 魏学成, 孙莉莉, 张韵, 李晋闽. 一种具有紫外杀菌消毒功能的水表. 中国: CN206440330U, 2017-08-25.
[124] 郭亚楠, 张韵, 闫建昌, 王军喜, 李晋闽. 高光出射效率的LED芯片及其制备方法. CN: CN107068826A, 2017-08-18.
[125] 伊晓燕, 刘志强, 何志, 段瑞飞, 黄洋, 王军喜, 李晋闽. 无衬底GaN基LED单颗晶粒及其制备方法. CN: CN106992232A, 2017-07-28.
[126] 谢海忠, 闫建昌, 魏学成, 孙莉莉, 宋昌斌, 张韵, 王军喜, 李晋闽. 一种杀菌消毒的装置. CN: CN206337054U, 2017-07-18.
[127] 袁国栋, 王琦, 张璐, 刘文强, 王军喜. 氮化物纳米带的制备方法. CN: CN106952856A, 2017-07-14.
[128] 刘志强, 黄洋, 伊晓燕, 王军喜, 李晋闽. 在MOCVD中测量半导体薄膜杂质电离能的无损测量方法. CN: CN106940303A, 2017-07-11.
[129] 詹腾, 伊晓燕, 刘志强, 王军喜, 李晋闽. 光刺激及信号采集探针. CN: CN106913315A, 2017-07-04.
[130] 马平, 姬小利, 李喜林, 刘波亭, 王军喜, 李晋闽. 一种增强型氮化物场效应晶体管及其制备方法. CN: CN106898640A, 2017-06-27.
[131] 伊晓燕, 詹腾, 刘志强, 王军喜, 李晋闽. 完全植入式光学医疗器械. CN: CN106821328A, 2017-06-13.
[132] 黄洋, 伊晓燕, 刘志强, 王军喜, 李晋闽. 采用变温PL谱获取半导体材料杂质电离能的无损测量方法. CN: CN106841146A, 2017-06-13.
[133] 伊晓燕, 潘岭峰, 王晓峰, 何志, 王军喜, 李晋闽. 一种匀化白光光源及其匀化方法. CN: CN106838821A, 2017-06-13.
[134] 郭亚楠, 张韵, 王军喜, 李晋闽. LED倒装基板的结构. CN: CN206236704U, 2017-06-09.
[135] 刘喆, 杨杰, 薛斌, 廖周, 王军喜, 李晋闽. 三基色激光器实现均光照明的系统. CN: CN106773073A, 2017-05-31.
[136] 闫建昌, 孙莉莉, 张韵, 王军喜, 李晋闽. 紫外发光二极管器件的制备方法. CN: CN106784180A, 2017-05-31.
[137] 刘喆, 杨杰, 薛斌, 王军喜, 李晋闽. 同时用于照明与通信的激光光源装置. CN: CN106684673A, 2017-05-17.
[138] 袁国栋, 张璐, 王琦, 王克超, 刘志强, 王军喜, 李晋闽. 非平面硅衬底LED器件及其制作方法. CN: CN106558637A, 2017-04-05.
[139] 倪茹雪, 张韵, 郭亚楠, 王军喜, 李晋闽. 一种LED芯片的图形化基板结构及其制备方法. CN: CN106531871A, 2017-03-22.
[140] 谢海忠, 闫建昌, 魏学成, 孙莉莉, 宋昌斌, 张韵, 王军喜, 李晋闽. 一种杀菌消毒的装置. CN: CN106517410A, 2017-03-22.
[141] 张韵, 郭亚楠, 曹峻松, 王军喜, 李晋闽. 一种LED芯片的图形化基板及其制备方法. CN: CN106505130A, 2017-03-15.
[142] 闫建昌, 谢海忠, 王军喜, 魏学成, 孙莉莉, 张韵, 李晋闽. 一种具有紫外杀菌消毒功能的水表. CN: CN106441485A, 2017-02-22.
[143] 孙莉莉, 张韵, 杨帅, 程哲, 张连, 吕宏瑞, 王军喜, 李晋闽. 单晶体声波器件及制备方法. CN: CN106374032A, 2017-02-01.
[144] 孙莉莉, 张韵, 程哲, 张连, 王军喜, 李晋闽. 金属上单晶氮化物薄膜制备方法及体声波谐振器. CN: CN106341095A, 2017-01-18.
[145] 孙莉莉, 张韵, 程哲, 张连, 王军喜, 李晋闽. 一种体声波器件的制备方法. CN: CN106341094A, 2017-01-18.
[146] 郭亚楠, 曹峻松, 谢海忠, 张韵, 王军喜, 李晋闽. 隐形切割制备正、倒和倒梯形台状衬底的LED芯片的方法. CN: CN106328778A, 2017-01-11.
[147] 袁国栋, 张璐, 王克超, 吴瑞伟, 李晋闽, 王军喜. 一种III族氮化物生物探针及其制备方法. CN: CN106229396A, 2016-12-14.
[148] 刘波亭, 马平, 张烁, 吴冬雪, 王军喜, 李晋闽. 在Si衬底上利用应变调制层减少GaN层穿透位错的结构及方法. CN: CN106128948A, 2016-11-16.
[149] 安平博, 赵丽霞, 魏同波, 陈召龙, 王军喜, 李晋闽. 利用石墨烯插入层在玻璃衬底上外延AlN薄膜的方法. CN: CN106048555A, 2016-10-26.
[150] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 紫外发光二极管器件的制备方法. CN: CN103943737B, 2016-09-28.
[151] 任鹏, 张宁, 薛斌, 刘喆, 王军喜, 李晋闽. 氮化镓纳米锥和氮化镓纳米柱混合阵列的制作方法. CN: CN105957801A, 2016-09-21.
[152] 刘波亭, 马平, 张烁, 吴冬雪, 王军喜, 李晋闽. 一种增强型AlGaN/GaN晶体管的制备方法. CN: CN105931964A, 2016-09-07.
[153] 袁国栋, 王乐, 段瑞飞, 李晋闽, 王军喜, 黄芳, 吴瑞伟, 王克超. GaN基白光LED及制备方法. CN: CN105870287A, 2016-08-17.
[154] 刘波亭, 马平, 张烁, 吴冬雪, 王军喜, 李晋闽. 一种增强型AlGaN/GaN高电子迁移率晶体管的制备方法. CN: CN105789047A, 2016-07-20.
[155] 卢鹏志, 杨华, 裴艳荣, 薛斌, 李璟, 王国宏, 王军喜, 李晋闽. 一种可实现自然光谱的LED光源. CN: CN205385020U, 2016-07-13.
[156] 黄宇亮, 程哲, 张连, 张韵, 王军喜, 李晋闽. 增强型高电子迁移率晶体管及制备方法、半导体器件. CN: CN105720097A, 2016-06-29.
[157] 熊卓, 魏同波, 王军喜, 李晋闽. 氮化镓基微纳米锥结构发光二极管及其制备方法. CN: CN105720157A, 2016-06-29.
[158] 熊卓, 魏同波, 王军喜, 李晋闽. 一种光色可调发光二极管及其制备方法. CN: CN105720151A, 2016-06-29.
[159] 王晓峰, 李丽娟, 霍自强, 王军喜, 李晋闽, 曾一平. 一种氧化镓薄膜的制备方法. CN: CN105624782A, 2016-06-01.
[160] 杨超, 赵丽霞, 朱石超, 刘磊, 于治国, 王军喜, 李晋闽. 可见光通信用倒装RCLED及其制备方法. CN: CN105609602A, 2016-05-25.
[161] 薛斌, 任鹏, 张宁, 刘喆, 王军喜, 李晋闽. 一种基于激光器的车灯系统. CN: CN105611692A, 2016-05-25.
[162] 刘立莉, 杨华, 于飞, 李璟, 伊晓燕, 王军喜, 李晋闽. LED芯片集成封装模块和封装方法. CN: CN105575956A, 2016-05-11.
[163] 袁国栋, 王乐, 段瑞飞, 李晋闽, 王军喜, 黄芳, 吴瑞伟, 王克超. 基于钙钛矿单晶衬底的太阳电池. CN: CN105552230A, 2016-05-04.
[164] 卢鹏志, 杨华, 郑怀文, 薛斌, 李璟, 王国宏, 王军喜, 李晋闽. 一种光色可调的LED叠层光源模块. CN: CN105546366A, 2016-05-04.
[165] 袁国栋, 王克超, 张璐, 吴瑞伟, 王军喜, 王国宏, 李晋闽. 采用GaN纳米图形衬底同质外延制备GaN薄膜及方法. CN: CN105552187A, 2016-05-04.
[166] 王晓峰, 李丽娟, 霍自强, 王军喜, 李晋闽, 曾一平. 一种氧化亚铜单晶薄膜的制备方法. CN: CN105525349A, 2016-04-27.
[167] 杨超, 赵丽霞, 朱石超, 刘磊, 于治国, 王军喜, 李晋闽. 可见光通信用单芯片白光LED及其制备方法. CN: CN105405938A, 2016-03-16.
[168] 袁国栋, 王乐, 段瑞飞, 李晋闽, 王军喜, 黄芳, 吴瑞伟, 王克超. 有机无机杂化钙钛矿单晶的制备方法. CN: CN105405979A, 2016-03-16.
[169] 薛斌, 任鹏, 张宁, 刘喆, 王军喜, 李晋闽. 一种激光器显示系统. CN: CN105388690A, 2016-03-09.
[170] 马平, 甄爱功, 刘波亭, 王军喜, 李晋闽. 一种白光发光二极管及其制作方法. CN: CN105280774A, 2016-01-27.
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[175] 张连, 张韵, 王军喜, 李晋闽. 降低基区电阻率的GaN基HBT外延结构及生长方法. CN: CN104900689A, 2015-09-09.
[176] 张连, 张韵, 王军喜, 李晋闽. 无掺杂剂的AlGaN基紫外发光二极管及制备方法. CN: CN104882522A, 2015-09-02.
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[179] 郭金霞, 田婷, 刘志强, 伊晓燕, 王军喜, 李晋闽. 柔性发光器件阵列及其制作方法. CN: CN104676320A, 2015-06-03.
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[183] 张硕, 段瑞飞, 曾一平, 王军喜, 李晋闽. 一种氮化物外延装置及方法. CN: CN104532208A, 2015-04-22.
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[185] 纪攀峰, 谢海忠, 梁萌, 马平, 张韵, 王军喜, 李晋闽. 倒装结构的氮化镓基高电子迁移率晶体管的制作方法. CN: CN104538304A, 2015-04-22.
[186] 张宁, 任鹏, 刘喆, 李晋闽, 王军喜. 提高Si衬底LED出光效率的外延结构及制备方法. CN: CN104538519A, 2015-04-22.
[187] 纪攀峰, 谢海忠, 郭恩卿, 马平, 张韵, 王军喜, 李晋闽. 转移衬底的氮化镓基高电子迁移率晶体管制作的方法. CN: CN104538303A, 2015-04-22.
[188] 孔庆峰, 郭金霞, 纪攀峰, 马平, 王文军, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 一种LED外延片的切裂方法. CN: CN104505442A, 2015-04-08.
[189] 张烁, 马平, 郭仕宽, 刘波亭, 李晋闽, 王军喜. 具有氮化镓系高阻层的HEMT及制备方法. CN: CN104485357A, 2015-04-01.
[190] 袁国栋, 吴瑞伟, 李晋闽, 王军喜. 改善HIT太阳能电池性能的微纳结构及制备方法. CN: CN104485367A, 2015-04-01.
[191] 詹腾, 马骏, 刘志强, 伊晓燕, 王军喜, 李晋闽. 电容式结构的发光二极管集成芯片及其制备方法. CN: CN104465921A, 2015-03-25.
[192] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 采用侧壁等离激元技术提高紫外发光二极管效率的方法. CN: CN104465905A, 2015-03-25.
[193] 纪攀峰, 孔庆峰, 王文军, 胡强, 马平, 曾一平, 王军喜, 李晋闽. MOCVD设备的石墨托盘. CN: CN104451605A, 2015-03-25.
[194] 李璟, 杨华, 王国宏, 王军喜, 李晋闽. 一种制备小间距LED全彩显示阵列的方法. CN: CN104465485A, 2015-03-25.
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[196] 安平博, 张硕, 赵丽霞, 段瑞飞, 路红喜, 王军喜, 李晋闽. 一种利用低熔点金属消除外延层生长热失配的方法. CN: CN104409336A, 2015-03-11.
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[198] 黄芳, 袁国栋, 李晋闽, 王军喜. 用于高效纳米偶极子太阳能电池的强极化装置及方法. CN: CN104393108A, 2015-03-04.
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[202] 裴艳荣, 杨华, 李璟, 王军喜, 李晋闽. 显示通信两用的可见光模块. CN: CN104333418A, 2015-02-04.
[203] 张勇辉, 魏同波, 王军喜, 李晋闽. 一种具有低折射率材料的LED图形化衬底的制备方法. CN: CN104319318A, 2015-01-28.
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[205] 裴艳荣, 杨华, 王军喜, 李晋闽. 基于LED投影的可见光通信装置. CN: CN104270195A, 2015-01-07.
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[207] 张连, 张韵, 闫建昌, 王军喜, 李晋闽. 一种具有极化诱导掺杂高阻层的GaN基HEMT结构及生长方法. CN: CN104241352A, 2014-12-24.
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[220] 谢海忠, 纪攀峰, 杨华, 伊晓燕, 王军喜, 李晋闽. 氮化镓基晶体管及其制备方法. CN: CN103996706A, 2014-08-20.
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[223] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 多功能LED手电筒. CN: CN203743880U, 2014-07-30.
[224] 刘娜, 孙雪娇, 孔庆峰, 梁萌, 王莉, 魏同波, 刘志强, 伊晓燕, 王军喜, 李晋闽. 抑制电极光吸收的发光二极管的制备方法. CN: CN103943738A, 2014-07-23.
[225] 刘娜, 孙雪娇, 孔庆峰, 梁萌, 王莉, 魏同波, 刘志强, 伊晓燕, 王军喜, 李晋闽. 提高光提取效率发光二极管的制备方法. CN: CN103943739A, 2014-07-23.
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[227] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 可杀菌消毒的多功能餐盒. CN: CN203692762U, 2014-07-09.
[228] 甄爱功, 马平, 张勇辉, 田迎冬, 郭恩卿, 王军喜, 李晋闽. 具有波导结构光子晶体发光二极管的制作方法. CN: CN103904175A, 2014-07-02.
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[230] 郭金霞, 田婷, 赵勇兵, 刘志强, 伊晓燕, 王军喜, 李晋闽. 倒装高压发光二极管及其制作方法. CN: CN103855149A, 2014-06-11.
[231] 郭恩卿, 伊晓燕, 刘志强, 王国宏, 王军喜, 李晋闽. 一种氮化镓薄膜的大面积连续无损激光剥离方法. CN: CN103839777A, 2014-06-04.
[232] 张连, 谢海忠, 杨华, 李璟, 王军喜, 李晋闽. 一种多芯片LED封装体的制作方法. CN: CN103824926A, 2014-05-28.
[233] 郭恩卿, 伊晓燕, 刘志强, 陈宇, 王军喜, 李晋闽. 插入匀化电流结构的发光器件及其制造方法. CN: CN103811610A, 2014-05-21.
[234] 魏学成, 赵丽霞, 张连, 于治国, 王军喜, 曾一平, 李晋闽. 一种测量LED内量子效率的方法. CN: CN103808497A, 2014-05-21.
[235] 裴艳荣, 杨华, 刘立莉, 李璟, 王军喜, 李晋闽. LED光源阵列投影测试装置. CN: CN103808496A, 2014-05-21.
[236] 闫建昌, 王军喜, 张韵, 丛培沛, 孙莉莉, 董鹏, 田迎冬, 李晋闽. 氮化物半导体发光二极管外延片、器件及其制备方法. CN: CN103811609A, 2014-05-21.
[237] 魏同波, 吴奎, 王军喜, 曾一平, 李晋闽. 一种基于纳米柱二极管压电效应的应力传感器的制备方法. CN: CN103794714A, 2014-05-14.
[238] 郭金霞, 谢海忠, 卢鹏志, 田婷, 赵勇兵, 詹腾, 伊晓燕, 王军喜, 李晋闽. 360度发光的LED球泡灯. CN: CN103791459A, 2014-05-14.
[239] 王晓峰, 尹玉华, 李丽娟, 霍自强, 王军喜, 李晋闽, 曾一平. 氧化物膜的制备方法. CN: CN103774114A, 2014-05-07.
[240] 魏同波, 吴奎, 王军喜, 曾一平, 李晋闽. 一种生长GaN厚膜的自剥离方法. CN: CN103779185A, 2014-05-07.
[241] 张宁, 魏学成, 刘桂鹏, 刘喆, 王军喜, 李晋闽. 一种控制半导体LED外延片内应力的装置. CN: CN103779453A, 2014-05-07.
[242] 张宁, 任鹏, 刘喆, 李晋闽, 王军喜. 一种提高发光效率的LED结构. CN: CN103779462A, 2014-05-07.
[243] 王兵, 伊晓燕, 孔庆峰, 刘志强, 王军喜, 王国宏, 李晋闽. 采用复合透明导电层的发光二极管及其制备方法. CN: CN103730558A, 2014-04-16.
[244] 田迎冬, 董鹏, 张韵, 闫建昌, 孙莉莉, 王军喜, 李晋闽. 氮化镓激光器腔面的制作方法. CN: CN103701037A, 2014-04-02.
[245] 梁萌, 杨华, 刘志强, 郭恩卿, 伊晓燕, 王军喜, 王国宏, 李晋闽. 一种氮化镓基外延膜的选区激光剥离方法. CN: CN103700736A, 2014-04-02.
[246] 郑怀文, 杨华, 卢鹏志, 李璟, 伊晓燕, 王军喜. 一种LED散热结构. CN: CN103644549A, 2014-03-19.
[247] 安平博, 赵丽霞, 魏学成, 路红喜, 王军喜, 李晋闽. 一种测量LED内量子效率的方法. CN: CN103645033A, 2014-03-19.
[248] 羊建坤, 魏同波, 霍自强, 张勇辉, 胡强, 段瑞飞, 王军喜. 生长半极性GaN厚膜的方法. CN: CN103647008A, 2014-03-19.
[249] 梁萌, 杨华, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 一种用于LED的晶圆级封装的芯片转移方法. CN: CN103647012A, 2014-03-19.
[250] 王莉, 谢海忠, 刘志强, 伊晓燕, 郭恩卿, 王军喜, 李晋闽. 一种晶圆级基板微通孔电镀方法. CN: CN103646923A, 2014-03-19.
[251] 姬小利, 路红喜, 郭金霞, 魏同波, 伊晓燕, 王军喜, 杨富华, 曾一平, 王国宏, 李晋闽. 一种氮化镓系发光器件. CN: CN103633218A, 2014-03-12.
[252] 谢海忠, 宋昌斌, 姚然, 卢鹏志, 杨华, 李璟, 伊晓燕, 王军喜, 王国宏, 李晋闽. 植物补光发光二极管的制作方法. CN: CN103579422A, 2014-02-12.
[253] 谢海忠, 张连, 宋昌斌, 姚然, 薛斌, 杨华, 李璟, 伊晓燕, 王军喜, 李晋闽. 芯片尺寸级晶圆发光二极管的制作方法. CN: CN103579423A, 2014-02-12.
[254] 谢海忠, 王莉, 杨华, 李璟, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 晶圆级微透镜压印成型方法. CN: CN103579467A, 2014-02-12.
[255] 马平, 刘波亭, 甄爱功, 郭仕宽, 纪攀峰, 王军喜, 李晋闽. 氮化镓系发光二极管及制备方法. CN: CN103579425A, 2014-02-12.
[256] 李璟, 王国宏, 王军喜, 李晋闽. 制作倒装集成LED芯片级光源模组的方法. CN: CN103579478A, 2014-02-12.
[257] 李璟, 杨华, 薛斌, 王国宏, 王军喜, 李晋闽. 制备晶圆级全彩LED显示阵列的方法. CN: CN103579461A, 2014-02-12.
[258] 纪攀峰, 马平, 王军喜, 胡强, 冉军学, 曾一平, 李晋闽. 优化配置的多腔室MOCVD反应系统. CN: CN103556126A, 2014-02-05.
[259] 杜成孝, 魏同波, 吴奎, 王军喜, 李晋闽. 一种带有大面积纳米图形的蓝宝石模板制作方法. CN: CN103545173A, 2014-01-29.
[260] 魏学成, 赵丽霞, 王莉, 孔庆峰, 卢鹏志, 王军喜, 曾一平, 李晋闽. 一种利用电致发光谱测量氮化物LED内量子效率的方法. CN: CN103528802A, 2014-01-22.
[261] 孔庆峰, 郭金霞, 马平, 王丽, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 在第一次光刻工艺中对准方形晶圆的方法. CN: CN103529658A, 2014-01-22.
[262] 纪攀峰, 马平, 王军喜, 胡强, 冉军学, 曾一平, 李晋闽. 用于MOCVD系统中控制外延片发光波长及均匀性的装置与方法. CN: CN103526190A, 2014-01-22.
[263] 魏学成, 赵丽霞, 张连, 于治国, 王军喜, 曾一平, 李晋闽. 一种利用光致发光谱测量GaN基LED的极化电场的方法. CN: CN103529310A, 2014-01-22.
[264] 刘立莉, 杨华, 卢鹏志, 薛斌, 孔庆峰, 王兵, 李璟, 王军喜, 李晋闽. 一种光斑可调的室内投影式照明系统. CN: CN103486474A, 2014-01-01.
[265] 王文军, 李晋闽, 王军喜, 马平, 纪攀峰, 郭金霞, 孔庆峰, 胡强. 截面为多边形的晶棒及衬底片表面取向的标识方法. CN: CN103489752A, 2014-01-01.
[266] 裴艳荣, 杨华, 赵丽霞, 王军喜, 李晋闽. 用于测试LED阵列光源性能的夹具及夹具组件. CN: CN103487611A, 2014-01-01.
[267] 裴艳荣, 杨华, 赵丽霞, 王军喜, 李晋闽. 用于测试器件光电性能的夹具及夹具组件. CN: CN103487610A, 2014-01-01.
[268] 冯向旭, 张宁, 刘乃鑫, 付丙磊, 朱绍歆, 张连, 魏同波, 王军喜, 李晋闽. 利用AlInGaN制作氮化镓外延薄膜的方法. CN: CN103489968A, 2014-01-01.
[269] 杨华, 刘立莉, 卢鹏志, 薛斌, 孔庆峰, 王兵, 李璟, 王军喜, 李晋闽. 一种投影式照明系统. CN: CN103470992A, 2013-12-25.
[270] 薛斌, 杨华, 卢鹏志, 于飞, 谢海忠, 李璟, 伊晓燕, 王军喜, 李晋闽. 一种发光二极管阵列的制备方法. CN: CN103474557A, 2013-12-25.
[271] 姬小利, 郭金霞, 马平, 马骏, 魏同波, 伊晓燕, 王军喜, 杨富华, 曾一平, 王国宏, 李晋闽. 氮化镓基宽光谱发光二极管及其制备方法. CN: CN103474536A, 2013-12-25.
[272] 薛斌, 卢鹏志, 谢海忠, 于飞, 杨华, 李璟, 伊晓燕, 王军喜, 李晋闽. 全彩发光二极管模组的制备方法. CN: CN103441101A, 2013-12-11.
[273] 郭金霞",null,null,null,null,null,null,"王军喜. 360度发光的LED球泡灯. CN: CN103438374A, 2013-12-11.
[274] 薛斌, 谢海忠, 卢鹏志, 于飞, 杨华, 李璟, 伊晓燕, 王军喜, 李晋闽. 具有可调输出光色的发光二极管模组的制备方法. CN: CN103413886A, 2013-11-27.
[275] 赵丽霞, 周子超, 杨华, 王军喜, 李晋闽. 半导体发光器件或模组在线多功能测试系统及方法. CN: CN103364032A, 2013-10-23.
[276] 孙莉莉, 闫建昌, 董鹏, 魏同波, 王军喜, 李晋闽. 一种可提高LED发光效率的金属纳米颗粒的制备方法. CN: CN103337564A, 2013-10-02.
[277] 张连, 曾建平, 魏同波, 闫建昌, 王军喜, 李晋闽. 可调控能带的UV LED多量子阱结构装置及生长方法. CN: CN103325903A, 2013-09-25.
[278] 于治国, 赵丽霞, 魏学成, 王军喜, 李晋闽. 表面等离激元增强GaN基纳米柱LED及制备方法. CN: CN103325900A, 2013-09-25.
[279] 于治国, 赵丽霞, 魏学成, 王军喜, 李晋闽. 垂直结构表面等离激元增强GaN基纳米柱LED及制备方法. CN: CN103325901A, 2013-09-25.
[280] 董鹏, 王军喜, 闫建昌, 张韵, 曾建平, 孙莉莉, 李晋闽. 在蓝宝石衬底上制备微纳米图形的方法. CN: CN103311097A, 2013-09-18.
[281] 张连, 曾建平, 路红喜, 王军喜, 李晋闽. 一种可调控能带的LED量子阱结构. CN: CN103296165A, 2013-09-11.
[282] 于治国, 赵丽霞, 魏学成, 王军喜, 李晋闽. 垂直阵列纳米柱LED的制备方法. CN: CN103280500A, 2013-09-04.
[283] 胡强, 魏同波, 羊建坤, 霍自强, 王军喜, 曾一平, 李晋闽. 一种双加热气相外延生长系统. CN: CN103276444A, 2013-09-04.
[284] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 一种金属纳米圆环的制备方法. CN: CN103268910A, 2013-08-28.
[285] 郭金霞, 闫建昌, 伊晓燕, 田婷, 詹腾, 赵勇兵, 宋昌斌, 王军喜. 高压发光二极管芯片及其制造方法. CN: CN103258836A, 2013-08-21.
[286] 曾建平, 闫建昌, 王军喜, 丛培沛, 孙莉莉, 董鹏, 李晋闽. 紫外共振腔发光二极管. CN: CN103236479A, 2013-08-07.
[287] 詹腾, 王国宏, 郭金霞, 李璟, 伊晓燕, 刘志强, 王军喜, 李晋闽. 任意切割式高压LED器件的制作方法. CN: CN103236474A, 2013-08-07.
[288] 曾建平, 闫建昌, 王军喜, 丛培沛, 孙莉莉, 董鹏, 李晋闽. 一种具有DBR高反射结构的紫外发光二极管及其制备方法. CN: CN103199164A, 2013-07-10.
[289] 郭金霞, 闫建昌",null,null,null,null,null,"王军喜. 高压发光二极管芯片及其制造方法. CN: CN103187494A, 2013-07-03.
[290] 杜成孝, 郑海洋, 魏同波, 王军喜, 李晋闽. 植入空气隙光子晶体的氮化镓基发光二极管的制备方法. CN: CN103178168A, 2013-06-26.
[291] 曾建平, 闫建昌, 王军喜, 丛培沛, 孙莉莉, 董鹏, 李晋闽. 一种具有高反射薄膜的紫外发光二极管及其制作方法. CN: CN103165775A, 2013-06-19.
[292] 赵玲慧, 马平, 甄爱功, 王军喜, 曾一平, 李晋闽. 折射率渐变的光子晶体发光二极管结构. CN: CN103151440A, 2013-06-12.
[293] 卢鹏志, 杨华, 郑怀文, 于飞, 薛斌, 伊晓燕, 王国宏, 王军喜, 李晋闽. 低热阻LED封装结构及封装方法. CN: CN103151445A, 2013-06-12.
[294] 卢鹏志, 杨华, 郑怀文, 于飞, 薛斌, 伊晓燕, 王国宏, 王军喜, 李晋闽. 无支架LED封装结构及封装方法. CN: CN103151446A, 2013-06-12.
[295] 马平, 王军喜, 王国宏, 曾一平, 李晋闽. 具有低温n型插入层的氮化镓系发光二极管及其制备方法. CN: CN103137808A, 2013-06-05.
[296] 孙莉莉, 闫建昌, 魏同波, 王军喜, 李晋闽. 紫外发光二极管结构. CN: CN103137822A, 2013-06-05.
[297] 张宁, 刘喆, 李晋闽, 王军喜. 具有应力释放层的绿光LED外延结构及制作方法. CN: CN103137807A, 2013-06-05.
[298] 杜成孝, 魏同波, 吴奎, 王军喜, 李晋闽. 一种具有六棱锥形p型氮化镓的发光二极管制备方法. CN: CN103107251A, 2013-05-15.
[299] 杨华, 薛斌, 于飞, 谢海忠, 卢鹏志, 李璟, 伊晓燕, 王军喜, 李晋闽. 晶圆级发光二极管阵列结构的制备方法. CN: CN103107250A, 2013-05-15.
[300] 杨华, 薛斌, 谢海忠, 卢鹏志, 伊晓燕, 王军喜, 李晋闽. 制备原位级发光二极管阵列结构的方法. CN: CN103107249A, 2013-05-15.
[301] 宋昌斌, 王军喜, 杨华, 段靖远. 一种植物补光装置及其补光方法. CN: CN103104839A, 2013-05-15.
[302] 冉军学, 胡强, 胡国新, 梁勇, 熊衍凯, 王军喜, 曾一平, 李晋闽. MOCVD设备反应室进气的气体混合与隔离装置. CN: CN103088318A, 2013-05-08.
[303] 杜成孝, 董鹏, 郑海洋, 魏同波, 严清峰, 吴奎, 张逸韵, 王军喜, 李晋闽. 利用自组装小球制作用于光刻版的金属网格模板的方法. CN: CN103091981A, 2013-05-08.
[304] 冉军学, 胡强, 胡国新, 梁勇, 熊衍凯, 王军喜, 曾一平, 李晋闽. 用于金属有机化学气相沉积设备的反应室进气装置. CN: CN103074674A, 2013-05-01.
[305] 魏同波, 吴奎, 王军喜, 曾一平, 李晋闽. 制备半球形微纳米透镜阵列的方法. CN: CN103011060A, 2013-04-03.
[306] 谢海忠, 于飞, 鲁志远, 杨华, 李璟, 伊晓燕, 王军喜, 王国宏, 李晋闽. 激光钻孔切割异形发光二极管的方法. CN: CN103022280A, 2013-04-03.
[307] 裴艳荣, 杨华, 赵丽霞, 王军喜. 测试可见光通信系统中光源性能的装置. CN: CN103001694A, 2013-03-27.
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[310] 刘娜, 谢海忠, 伊晓燕, 王军喜, 李晋闽. 高出光率倒装结构LED的制作方法. CN: CN102969422A, 2013-03-13.
[311] 羊建坤, 魏同波, 胡强, 霍自强, 段瑞飞, 王军喜. 制备GaN厚膜垂直结构LED的方法. CN: CN102969410A, 2013-03-13.
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[317] 谢海忠, 张逸韵, 杨华, 李璟, 伊晓燕, 王军喜, 王国宏, 李晋闽. 应用于LED器件分离的多焦点飞秒激光划片方法. CN: CN102886609A, 2013-01-23.
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[319] 朱邵歆, 闫建昌, 杨华, 张宁, 司朝, 曾建平, 李晋闽, 王军喜. 用于可见光通信的通信系统和便携装置. CN: CN202652224U, 2013-01-02.
[320] 朱邵歆, 闫建昌, 杨华, 张宁, 司朝, 曾建平, 李晋闽, 王军喜. 便携装置的可见光通信系统与方法. CN: CN102801471A, 2012-11-28.
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[325] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 用于GaN基LED的ITO纳米碗阵列的粗化方法. CN: CN102694088A, 2012-09-26.
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[328] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 具有空气桥结构发光二极管的制作方法. CN: CN102683522A, 2012-09-19.
[329] 董鹏, 王军喜, 闫建昌, 张逸韵, 孙莉莉, 曾建平, 李晋闽. 提高紫外发光二极管出光效率的方法. CN: CN102655194A, 2012-09-05.
[330] 卢鹏志, 杨华, 王晓彤, 王琳琳, 李璟, 伊晓燕, 王军喜, 王国宏. LED封装结构及封装成型方法. CN: CN102637810A, 2012-08-15.
[331] 赵丽霞, 杨华, 王军喜, 王国宏, 曾一平, 李晋闽. 对发光二极管进行光电热老化综合检测的系统及方法. CN: CN102608509A, 2012-07-25.
[332] 谢海忠, 张逸韵, 王兵, 杨华, 李璟, 伊晓燕, 王军喜, 王国宏, 李晋闽. 侧面粗化的发光二极管及其制作方法. CN: CN102593301A, 2012-07-18.
[333] 梁萌, 李鸿渐, 姚然, 李志聪, 李盼盼, 王兵, 李璟, 伊晓燕, 王军喜, 王国宏, 李晋闽. 氮化物LED外延结构的生长方法. CN: CN102569567A, 2012-07-11.
[334] 梁萌, 李鸿渐, 姚然, 李志聪, 李盼盼, 王兵, 李璟, 伊晓燕, 王军喜, 王国宏, 李晋闽. 利用双成核层生长高质量氮化镓外延结构的方法. CN: CN102544271A, 2012-07-04.
[335] 梁萌, 李鸿渐, 姚然, 李志聪, 李盼盼, 王兵, 李璟, 伊晓燕, 王军喜, 王国宏, 李晋闽. 在图形衬底上生长氮化镓外延结构的方法. CN: CN102534769A, 2012-07-04.
[336] 张逸韵, 谢海忠, 杨华, 李璟, 伊晓燕, 王军喜, 王国宏, 李晋闽. 制备倒梯形氮化镓基发光二极管的方法. CN: CN102544270A, 2012-07-04.
[337] 冉军学, 胡强, 梁勇, 胡国新, 王军喜, 曾一平, 李晋闽. 用于金属有机气相沉积设备的进气喷头. CN: CN102534559A, 2012-07-04.
[338] 马平. 氮化镓系发光二极管. CN: CN101834248B, 2012-07-04.
[339] 冉军学, 胡强, 梁勇, 胡国新, 王军喜, 曾一平, 李晋闽. 用于金属化学气相沉积设备反应室的进气喷淋头. CN: CN102492937A, 2012-06-13.
[340] 刘硕, 郭恩卿, 伊晓燕, 王军喜, 李晋闽. GaN基薄膜芯片的制造方法. CN: CN102496667A, 2012-06-13.
[341] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 李晋闽. 低位错氮化镓的生长方法. CN: CN102409406A, 2012-04-11.
[342] 赵婧, 刘喆, 王军喜, 李晋闽. Co掺杂CaO稀磁半导体材料的制备方法. CN: CN102351229A, 2012-02-15.
[343] 赵婧, 刘喆, 王军喜, 李晋闽. Fe掺杂CuO稀磁半导体材料的制备方法. CN: CN102351236A, 2012-02-15.
[344] 杨华, 卢鹏志, 谢海忠, 于飞, 郑怀文, 薛斌, 伊晓燕, 王军喜, 王国宏, 李晋闽. 发光二极管封装结构. CN: CN102255034A, 2011-11-23.
[345] 杨华",null,null,null,null,null,"伊晓燕, 王军喜. 发光二极管封装结构的制作方法. CN: CN102231421A, 2011-11-02.
[346] 马平, 王军喜, 魏学成, 曾一平, 李晋闽. 提高电子注入效率的氮化镓基发光二极管. CN: CN102185056A, 2011-09-14.
[347] 马平, 王军喜, 王国宏, 曾一平, 李晋闽. 调制掺杂的氮化镓系发光二极管的制作方法. CN: CN102185052A, 2011-09-14.
[348] 贠利君, 吴奎, 刘乃鑫, 刘喆, 王军喜. 一种紫外LED的制作方法. CN: CN102148300A, 2011-08-10.
[349] 孙莉莉, 闫建昌, 王军喜. 发光二极管的制备方法. CN: CN102130230A, 2011-07-20.
[350] 马平, 王军喜, 王国宏, 曾一平, 李晋闽. 高质量氮化镓系发光二极管. CN: CN102064254A, 2011-05-18.
[351] 黄亚军, 樊中朝, 刘志强, 伊晓燕, 季安, 王军喜. 高提取效率氮化镓发光二极管的制作方法. CN: CN102064242A, 2011-05-18.
[352] 魏同波, 王军喜, 路红喜, 刘乃鑫, 曾一平, 李晋闽. 金属催化脱氢提高镁掺杂氮化物激活效率的方法. CN: CN102031484A, 2011-04-27.
[353] 孙莉莉, 闫建昌, 王军喜, 刘乃鑫, 魏同波, 魏学成, 马平, 刘喆, 曾一平, 王国宏, 李晋闽. 一种增强LED出光效率的粗化方法. CN: CN101976712A, 2011-02-16.
[354] 孙莉莉, 闫建昌, 王军喜, 刘乃鑫, 魏同波, 魏学成, 马平, 刘喆, 曾一平, 王国宏, 李晋闽. 适用于氮化物LED外延生长的纳米级图形衬底的制备方法. CN: CN101969088A, 2011-02-09.
[355] 马平, 王军喜, 刘乃鑫, 路红喜, 王国宏, 曾一平, 李晋闽. 一种氮化镓系发光二极管. CN: CN101931036A, 2010-12-29.
[356] 马平, 王军喜, 王国宏, 曾一平, 李晋闽. 采用In x Ga 1-x N缓冲层生长的氮化镓和铟镓氮的方法. CN: CN101924022A, 2010-12-22.
[357] 马平, 王军喜, 王国宏, 曾一平, 李晋闽. 采用In x Ga 1-x N缓冲层生长的氮化镓和铟镓氮的方法. 中国: CN101924022A, 2010-12-22.
[358] 冉军学, 胡国新, 梁勇, 王军喜, 段瑞飞, 曾一平, 李晋闽. 一种用于金属有机物化学气相沉积设备的进气喷头结构. CN: CN101914762A, 2010-12-15.
[359] 孙莉莉, 闫发旺, 张会肖, 王军喜, 王国宏, 曾一平, 李晋闽. 采用MOCVD制备非极性GaN基稀磁半导体材料的方法. CN: CN101899706A, 2010-12-01.
[360] 孙莉莉, 闫发旺, 张会肖, 王军喜, 王国宏, 曾一平, 李晋闽. 采用离子注入制备非极性GaN基稀磁半导体材料的方法. CN: CN101894651A, 2010-11-24.
[361] 马平, 李京波. 氮化镓系发光二极管. CN: CN101834248A, 2010-09-15.
[362] 王兵, 李志聪, 王国宏, 闫发旺, 姚然, 王军喜, 李晋闽. 一种氮化镓外延中的相变成核的生长方法. CN: CN101812725A, 2010-08-25.
[363] 丁凯, 张连, 王军喜, 段瑞飞, 曾一平, 李晋闽. 利用极化感应空穴实现p型金属极性宽禁带半导体的方法. CN: CN101807520A, 2010-08-18.
[364] 张连, 丁凯, 王军喜, 段瑞飞, 曾一平, 李晋闽. 利用三维极化感应空穴气提高LED发光效率的方法. CN: CN101807640A, 2010-08-18.
[365] 孙莉莉, 闫发旺, 张会肖, 王军喜, 王国宏, 曾一平, 李晋闽. 三角形GaN基发光二极管芯片的对称电极. CN: CN101794851A, 2010-08-04.
[366] 孙莉莉, 闫发旺, 张会肖, 王军喜, 王国宏, 曾一平, 李晋闽. 平行四边形GaN基发光二极管芯片的对称电极. CN: CN101794850A, 2010-08-04.
[367] 闫发旺, 孙莉莉, 张会肖, 伊晓燕, 王军喜, 王国宏, 曾一平, 李晋闽. 全侧壁锯齿状粗化发光二极管芯片的制备方法. CN: CN101789477A, 2010-07-28.
[368] 纪攀峰, 李京波, 闫建昌, 刘乃鑫, 刘喆, 王军喜, 李晋闽. 一种提高镁在Ⅲ-Ⅴ族氮化物中激活效率的方法. CN: CN101740690A, 2010-06-16.
[369] 纪攀峰, 李京波, 闫建昌, 刘乃鑫, 刘喆, 王军喜, 李晋闽. 一种对Ⅲ-Ⅴ氮化物进行n型和p型掺杂的方法. CN: CN101710569A, 2010-05-19.
[370] 段瑞飞, 王军喜, 王国宏, 曾一平, 李晋闽. 金属有机物化学气相沉积装置. CN: CN101654773A, 2010-02-24.
[371] 闫发旺, 高海永, 樊中朝, 李晋闽, 曾一平, 王国宏, 张会肖, 王军喜, 张 扬. 用于氮化物外延生长的纳米级图形衬底的制作方法. CN: CN100587919C, 2010-02-03.
[372] 卢鹏志, 杨华, 薛斌, 王晓桐, 王琳琳, 李璟, 伊晓燕, 王国宏, 王军喜. LED芯片的封装方法. CN: CN101567410A, 2009-10-28.
[373] 段瑞飞, 王军喜, 曾一平, 王国宏, 李晋闽. 一种垂直结构氮化物LED的制备方法. CN: CN101546799A, 2009-09-30.
[374] 魏同波, 段瑞飞, 霍自强, 王军喜, 曾一平, 李晋闽. 一种在蓝宝石衬底上生长非极性GaN厚膜的方法. CN: CN101519799A, 2009-09-02.
[375] 段瑞飞, 王军喜, 曾一平, 王国宏, 李晋闽. 一种氮化物材料的外延方法. CN: CN101469451A, 2009-07-01.
[376] 段瑞飞, 王军喜, 曾一平, 李晋闽. 一种氮化物材料外延装置. CN: CN101343777A, 2009-01-14.
[377] 段瑞飞, 王军喜, 曾一平, 李晋闽. 一种独立供应金属卤化物的氢化物气相外延装置. CN: CN101205626A, 2008-06-25.
[378] 段瑞飞, 刘 喆, 钟兴儒, 魏同波, 马 平, 王军喜, 曾一平, 李晋闽. 一种制备氮化物单晶衬底的氢化物气相外延装置. CN: CN101205627A, 2008-06-25.
[379] 王晓亮, 王新华, 冯春, 王保柱, 马志勇, 王军喜, 胡国新, 肖红领, 冉军学, 王翠梅. 一种对气体传感器或半导体器件性能进行测试的系统. CN: CN101140252A, 2008-03-12.
[380] 王保柱, 王晓亮, 王晓燕, 王新华, 肖红领, 王军喜, 刘宏新. 用MBE外延InAlGaN单晶薄膜的方法. CN: CN101114584A, 2008-01-30.
[381] 王晓亮, 胡国新, 马志勇, 冉学军, 王翠敏, 肖红领, 王军喜, 李建平, 曾一平, 李晋闽. 碳化硅衬底氮化镓高电子迁移率晶体管及制作方法. CN: CN101005034A, 2007-07-25.
[382] 刘喆, 李晋闽, 王军喜, 王晓亮, 王启元, 刘宏新, 王俊, 曾一平. 在硅衬底上生长无裂纹氮化镓薄膜的方法. CN: CN1967778A, 2007-05-23.
[383] 王晓亮, 胡国新, 王军喜, 李建平, 曾一平, 李晋闽. 生长高迁移率氮化镓外延膜的方法. CN: CN1313655C, 2007-05-02.
[384] 冉军学, 王晓亮, 李建平, 胡国新, 王军喜, 王翠梅, 曾一平. 一种减小Mg记忆效应的GaN基pn结的生长方法. CN: CN1892985A, 2007-01-10.
[385] 刘 喆, 王军喜, 钟兴儒, 李晋闽, 曾一平, 段瑞飞, 马 平, 魏同波, 林郭强. 制造厚膜氮化物材料的氢化物气相外延装置. CN: CN1881533A, 2006-12-20.
[386] 王晓亮, 冉军学, 李建平, 胡国新, 王军喜, 曾一平, 李晋闽. 一种用于氮化物半导体材料退火的新型加热衬托. CN: CN2819471Y, 2006-09-20.
[387] 王晓亮, 王翠梅, 胡国新, 王军喜, 李建平, 曾一平, 李晋闽. 改善氮化镓基高电子迁移率晶体管栅极肖特基性能的结构. CN: CN1797787A, 2006-07-05.
[388] 王晓亮, 王翠梅, 胡国新, 王军喜, 李建平, 曾一平, 李晋闽. 双异质结构氮化镓基高电子迁移率晶体管结构及制作方法. CN: CN1787229A, 2006-06-14.
[389] 王翠梅, 王晓亮, 胡国新, 王军喜, 李建平, 曾一平, 李晋闽. 提高氮化镓基高电子迁移率晶体管性能的结构及制作方法. CN: CN1783512A, 2006-06-07.
[390] 马平, 李京波, 王军喜, 王国宏, 曾一平, 李晋闽. 氮化镓系发光二极管. CN: CN1753199A, 2006-03-29.
[391] Wang, Xiaoliang, Guo, Lunchun, Wang, Junxi, Li, Jinmin, Zeng, Yiping. White light emitting diode of a blue and yellow light emitting (structure) layer stacked structure and method of manufacturing the same. US: US20060043385(A1), 2006-03-02.
[392] 郭伦春, 王晓亮, 王军喜, 肖红领, 曾一平, 李晋闽. 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法. CN: CN1741290A, 2006-03-01.
[393] 王晓亮, 胡国新, 王军喜, 王翠梅, 曾一平, 李晋闽. 铝镓氮/氮化镓高电子迁移率晶体管的制作方法. CN: CN1728349A, 2006-02-01.
[394] 张南红, 王晓亮, 曾一平, 肖红领, 王军喜, 刘宏新, 李晋闽. 一种在硅衬底上生长高质量氮化铝的方法. CN: CN1707753A, 2005-12-14.
[395] 肖红领, 王晓亮, 王军喜, 张南红, 刘宏新, 曾一平. 生长高结晶质量氮化铟单晶外延膜的方法. CN: CN1704507A, 2005-12-07.
[396] 王晓亮, 胡国新, 王军喜, 冉军学, 曾一平, 李晋闽. 生长高阻氮化镓外延膜的方法. CN: CN1704505A, 2005-12-07.
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[335] 王翠梅, 王晓亮, 王军喜. AlGaN／GaN HEMT电流崩塌效应研究进展. 固体电子学研究与进展[J]. 2005, 25(1): 35-41, http://lib.cqvip.com/Qikan/Article/Detail?id=15160687.
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（1） LED器件与工艺技术, 电子工业出版社, 2015-09, 第 2 作者
（2） III族氮化物发光二极管技术及其应用, 科学出版社, 2016-03, 第 2 作者
（3） 半导体照明概论, 电子工业出版社, 2016-05, 第 5 作者
（4） Light-Emitting Diodes, Springer, 2019-02, 第 2 作者
（5） III-Nitrides Light Emitting Diodes: Technology and Applications, Springer, 2020-06, 第 2 作者
（6） 氮化物深紫外发光材料及器件, 科学出版社, 2021-01, 第 2 作者

   

（ 1 ） 深紫外LED制备和应用技术研究, 参与, 国家级, 2011-01--2013-12
（ 2 ） 高效氮化镓基绿光LEDs的研究, 主持, 国家级, 2014-01--2018-12
（ 3 ） 第三代半导体固态紫外光源材料及器件关键技术, 主持, 国家级, 2016-07--2021-06
（ 4 ） 高效率AlGaN深紫外发光器件基础研究, 主持, 国家级, 2022-01--2026-12

（1）The Technology and Application of UVC LED   2019-11-21
（2）Research and Development of UV LEDs in China   2019-09-08
（3）Opportunity and Challenge for Nitride-based UV-LEDs   第十五届中国国际半导体照明论坛   2018-10-23
（4）AlGaN基紫外发光二极管研究进展   第十五届全国MOCVD学术会议   2018-08-22
（5）Research Progress on AlGaN-based Ultraviolet   2017-09-18
（6）深紫外发光二极管的研究现状及发展趋势   第二届全国宽禁带半导体学术会议   2017-08-10
（7）Al-rich Nitride-Based UV Emitters with Micro-nano Fabrication Techniques   第三届中韩纳米材料及光电应用研讨会   2016-11-24

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张亮  博士研究生  080501-材料物理与化学  

常洪亮  博士研究生  080903-微电子学与固体电子学  

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梁冬冬  博士研究生  080903-微电子学与固体电子学  

李燕  博士研究生  0805Z2-半导体材料与器件  

陈仁锋  硕士研究生  080501-材料物理与化学  

王新维  博士研究生  080903-微电子学与固体电子学  

张琪  硕士研究生  085400-电子信息  

王大地  博士研究生  080501-材料物理与化学  

蒋宗霖  硕士研究生  080903-微电子学与固体电子学  

王璐璐  博士研究生  080903-微电子学与固体电子学  

吴涵  硕士研究生  085400-电子信息  

张睿洁  博士研究生  080903-微电子学与固体电子学