1、III-V族半导体材料和器件

2、大失配异质外延   　　

3、硅基光电集成

   

0805Z2-半导体材料与器件

分子束外延
激光器
硅基光电集成

2004-09--2009-07   中国科学院研究生院   研究生 / 博士
2000-09--2004-07   天津大学   本科 / 学士

   

2021-01~现在, 中国科学院半导体研究所, 研究员
2020-04~2021-01,中国科学院半导体研究所, 项目研究员
2018-07~2020-03,亚琛工业大学/于利希国家研究中心, 研究科学家
2009-06~2018-06,阿卜杜拉国王科技大学, 研究专家/研究科学家

2022-06-17-今,Photonics Technology Letters, 副编辑
2022-04-04-今,英国物理学会（IOP）, 会士
2021-07-21-今,美国光学学会（OSA）, 高级会员
2020-04-21-今,Electronics Express, 副编辑
2018-03-07-今,电气电子工程师学会（IEEE）, 高级会员

   

（1） 中国科学院半导体所“卓越青年学者”, 研究所（学校）, 2020
（2） 中国科学院“高层次引进人才计划”择优支持, 院级, 2020

（ 1 ） Light emitters on transition metal dichalcogenides directly converted from thermally and electrically conductive substrates and method of making the same, 发明专利, 2021, 第 1 作者, 专利号: US11127591(B2)

（ 2 ） Method of fabricating orange-emitting nanowires LEDs, 发明专利, 2021, 第 4 作者, 专利号: US10995914(B2)

（ 3 ） Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting, 发明专利, 2020, 第 2 作者, 专利号: US10784410(B2)

（ 4 ） Nanowires-based light emitters on thermally and electrically conductive substrates and of making same, 发明专利, 2020, 第 2 作者, 专利号: US10665451(B2)

（ 5 ） ULTRABROAD LINEWIDTH ORANGE-EMITTING NANOWIRES LED FOR HIGH CRI LASER-BASED WHITE LIGHTING AND GIGAHERTZ COMMUNICATIONS, 发明专利, 2020, 第 4 作者, 专利号: US20200088353(A1)

（ 6 ） 砷化铟和砷化镓的纳米结构及其制作方法, 发明专利, 2009, 第 1 作者, 专利号: CN100468802C

   

[1] TIANYI TANG, 占文康, CHAO SHEN, MANYANG LI, BO XU, Zhanguo Wang, 赵超. High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters. Optical Materials Express[J]. 2023, 13(1): 104-118, [2] Islam, Md Rasidul, Islam, A S M Jannatul, Liu, Kong, Wang, Zhijie, Qu, Shengchun, Zhao, Chao, Wang, Xiaohui, Wang, Zhanguo. Strain-induced tunability of the optoelectronic properties of inorganic lead iodide perovskites APbI3 (A= Rb and Cs). PHYSICA B-CONDENSED MATTER[J]. 2022, 638: http://dx.doi.org/10.1016/j.physb.2022.413960.
[3] Tianyi Tang, Tian Yu, Guanqing Yang, Jiaqian Sun, Wenkang Zhan, Bo Xu, Chao Zhao, Zhanguo Wang. Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers. 半导体学报:英文版[J]. 2022, 43(1): 37-43, http://doi.org/10.1088/1674- 4926/43/1/012301.
[4] Soopy, Abdul Kareem K, Li, Zhaonan, Tang, Tianyi, Sun, Jiaqian, Xu, Bo, Zhao, Chao, Najar, Adel. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching. NANOMATERIALS[J]. 2021, 11(1): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7827665/.
[5] Islam, Md Rasidul, Liu, Kong, Wang, Zhijie, Qu, Shengchun, Zhao, Chao, Wang, Xiaohui, Wang, Zhanguo. Impact of defect and doping on the structural and electronic properties of monolayer boron phosphide. CHEMICAL PHYSICS[J]. 2021, 542: http://dx.doi.org/10.1016/j.chemphys.2020.111054.
[6] Zhao, Chao, Li, Zhaonan, Tang, Tianyi, Sun, Jiaqian, Zhan, Wenkang, Xu, Bo, Sun, Huajun, Jiang, Hui, Liu, Kong, Qu, Shengchun, Wang, Zhijie, Wang, Zhanguo. Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials. PROGRESS IN QUANTUM ELECTRONICSnull. 2021, 76: http://dx.doi.org/10.1016/j.pquantelec.2020.100313.
[7] Chao Zhao, Bo Xu, Zhijie Wang, Zhanguo Wang. Boron-doped III–V semiconductors for Si-based optoelectronic devices. 半导体学报:英文版[J]. 2020, 41(1): 28-38, http://lib.cqvip.com/Qikan/Article/Detail?id=7100725444.
[8] Chao Zhao, Zhijie Wang, Dajun Shu, Yong Lei. Preface to the Special Issue on Challenges and Possibilities of Energy Storage. 半导体学报:英文版. 2020, 41(9): I0001-I0001, http://lib.cqvip.com/Qikan/Article/Detail?id=7102734492.
[9] Huang, Yanbin, Liu, Jun, Zhao, Chao, Jia, Xiaohao, Ma, Mengmeng, Qian, Yuanyuan, Yang, Cheng, Liu, Kong, Tan, Furui, Wang, Zhijie, Li, Xiaobao, Qu, Shengchun, Wang, Zhanguo. Facile Synthesis of Defect-Modified Thin-Layered and Porous g-C3N4 with Synergetic Improvement for Photocatalytic H-2 Production. ACS APPLIED MATERIALS & INTERFACES[J]. 2020, 12(47): 52603-52614, http://dx.doi.org/10.1021/acsami.0c14262.
[10] Zhao, Chao, Ebaid, Mohamed, Zhang, Huafan, Priante, Davide, Janjua, Bilal, Zhang, Daliang, Wei, Nini, Alhamoud, Abdullah A, Shakfa, Mohammad Khaled, Ng, Tien Khee, Ooi, Boon S. Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters. NANOSCALE[J]. 2018, 10(34): http://dx.doi.org/10.1039/c8nr02615g.
[11] Zhao Chao. III-Nitride Nanowires on Unconventional Substrates: from Material to Optoelectronic Device Applications. PROGRESSINQUANTUMELECTRONICS. 2018, [12] Zhao, Chao, Ng, Tien Khee, Tseng, ChienChih, Li, Jun, Shi, Yumeng, Wei, Nini, Zhang, Daliang, Consiglio, Giuseppe Bernardo, Prabaswara, Aditya, Alhamoud, Abdullah Ali, Albadri, Abdulrahman M, Alyamani, Ahmed Y, Zhang, X X, Li, LainJong, Ooi, Boon S. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters. RSC ADVANCES[J]. 2017, 7(43): 26665-26672, https://www.webofscience.com/wos/woscc/full-record/WOS:000401975700018.
[13] Zhao, Chao, Ng, Tien Khee, Wei, Nini, Prabaswara, Aditya, Alias, Mohd S, Janjua, Bilal, Shen, Chao, Ooi, Boon S. Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. NANO LETTERS[J]. 2016, 16(2): 1056-1063, https://www.webofscience.com/wos/woscc/full-record/WOS:000370215200035.
[14] Zhao, Chao, Ng, Tien Khee, ElAfandy, Rami T, Prabaswara, Aditya, Consiglio, Giuseppe Bernardo, Ajia, Idris A, Roqan, Iman S, Janjua, Bilal, Shen, Chao, Eid, Jessica, Alyamani, Ahmed Y, ElDesouki, Munir M, Ooi, Boon S. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light Emitting Diodes for Monolithic Metal-Optoelectronics. NANO LETTERS[J]. 2016, 16(7): 4616-4623, https://www.webofscience.com/wos/woscc/full-record/WOS:000379794200093.
[15] Zhao, Chao, Ng, Tien Khee, Prabaswara, Aditya, Conroy, Michele, Jahangir, Shafat, Frost, Thomas, OConnell, John, Holmes, Justin D, Parbrook, Peter J, Bhattacharya, Pallab, Ooi, Boon S. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. NANOSCALE[J]. 2015, 7(40): 16658-16665, https://www.webofscience.com/wos/woscc/full-record/WOS:000362662100015.
[16] Yan, Jianchang, Wang, Junxi, Cong, Peipei, Sun, Lili, Liu, Naixin, Liu, Zhe, Zhao, Chao, Li, Jinmin. Improved performance of UV-LED by p-AlGaN with graded composition. PHYSICA STATUS SOLIDI(C) CURRENT TOPICS IN SOLID STATE PHYSICS[J]. 2011, 8(2): 461-463, http://ir.semi.ac.cn/handle/172111/23149.
[17] Zhao Chao, Chen Yonghai, Xu Bo, Tang Chenguang, Wang Zhanguo, Cho YH, Kim EK. Morphology and wetting layer properties of InAs/GaAs nanostructures. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4null. 2009, 6(4): 789-792, [18] Zhao Chao. Study of wetting layer of InAs/GaAs nanostructures grown by droplet epitaxy. Applied Physics Letters. 2008, [19] Zhao, C, Chen, Y H, Xu, B, Jin, P, Wang, Z G. Evolution of InAs nanostructures grown by droplet epitaxy. APPLIED PHYSICS LETTERS[J]. 2007, 91(3): http://ir.semi.ac.cn/handle/172111/9336.

（1） III-V optoelectronic devices grown on silicon, Wiley, 2021-06, 第 其他 作者

   

（ 1 ） 微纳结构设计及其光电耦合性能优化, 负责人, 中国科学院计划, 2020-01--2024-12
（ 2 ） 中国科学院“高层次引进人才计划”择优支持, 负责人, 中国科学院计划, 2021-01--2023-12
（ 3 ） 中国科学院半导体所“卓越青年学者”启动经费, 负责人, 研究所自选, 2020-04--2023-04
（ 4 ） 高性能光模块集成技术及验证, 负责人, 国家任务, 2022-07--2025-06
（ 5 ） CMOS工艺兼容的硅基外延InAs量 子点激光器缺陷抑制研究, 负责人, 国家任务, 2023-01--2026-12
（ 6 ） 后摩尔时代硅基异质材料及调控机理, 参与, 中国科学院计划, 2022-07--2027-07

（1）Semiconductor light emitters on unconventional substrates   2021-08-13
（2）Special Light Sources on Unconventional Substrates   2020-10-24
（3）InGaN/GaN Nanowire LEDs and Lasers   2016-07-11

与国内外知名科研单位建立了深入的合作关系，包括加州大学圣巴巴拉分校、密歇根大学、纽约大学、亚琛工业大学和阿卜杜拉国王科技大学等。

现指导学生

李曼阳  硕士研究生  085600-材料与化工  

占文康  博士研究生  0805Z2-半导体材料与器件