基本信息

张洪亮,博士,研究员,博导,2003年至2011年分别获得兰州大学物理学学士、凝聚态物理硕士、博士学位,硕士、博士期间在兰州大学和中国工程物理研究院联合培养从事光电薄膜材料制备及其性能研究;2011年7月进入中国科学院宁波材料技术与工程研究所从事光电功能薄膜与器件研究任助理研究员,2013年12月和2020年12月分别晋升为副研究员、研究员。主持国家自然科学基金(2项)、国家重点研发计划(子课题) 、浙江省“尖兵”“领雁”研发攻关计划项目、宁波市科技创新2025重大专项等各类项目共12项。已在Journal of Materials Chemistry C,Inorganic Chemistry,Scripta Materialia等材料领域权威期刊上发表SCI论文60余篇,申请中国专利16项,其中已授权10项。入选国家“战略性科技创新合作”重点专项专家、中国感光学会青年理事、中国感光学会电致变色专业委员会青年工作组成员等。现任Advanced Optical Materials, Advanced Functional Materials等10多个国际权威学术期刊审稿人。现主要从事功能薄膜与界面设计的研究,包括电致变色器件和柔性电路板。

招生方向:功能材料与纳米器件,表界面化学与物理。

招生人数与专业背景:招收3-4名研究生/年,具有材料物理与化学、材料与化工、材料学、半导体物理与器件或凝聚态物理相关专业背景;硕博连读优先考虑。

电邮:zhanghl@nimte.ac.cn,电话:0574-8668 8153

通信地址: 浙江省宁波市镇海区中官西路1219号
邮政编码: 315201

所内主页:https://zhanghl.nimte.ac.cn/

研究领域

1. 光学薄膜和器()件,包括/能量转化/节能/环保/环境健康;

研究方向之一:电致变色器件

电致变色(Electrochromic, EC)是指由于外加电场的极性和强度的变化而引起变色材料可逆的氧化/还原反应,从而导致其外观颜色可逆改变的现象。一个标准的电致变色器件有五层功能层叠加而成,分别为透明导电层、电致变色层、离子传导层、离子存储层(也可以是与前一种电致变色层的极性相反的电致变色层)和另一透明导电层。电致变色材料具有双稳态(着色/褪色稳态)的性能,用电致变色材料做成的电致变色显示器件不仅不需要背光灯,而且显示静态图像后,只要显示内容不变化,就不会耗电,所以是一种节能器件。目前,电致变色技术在电致变色智能窗(smart windows)、汽车防眩目后视镜(anti-dazzling mirrors)、仪表和信息显示、传感器、电子纸、光调制器和光闸、护目镜等领域具有广阔的应用前景。

典型电致变色器件工作原理图

电致变色器件主要应用领域


2. 新型薄膜材料及其在消费类电子学器件和光电子学器件应用;

研究方向之一:柔性电路板

      线路板作为提供电子零组件安装与插接时主要的支撑体,成为了所有电子产品不可或缺部分。随着电子产品向小型化发展,柔性电路板(Flexible Printed Circuit,简称FPC)具有轻、薄、柔性等优点,在手机、照相机、计算机、通信、汽车、医疗等领域获得了广泛的应用。受到电子产品小型化、轻量化、多功能化不断发展的驱使,FPC也遇到了巨大挑战和发展机遇。早在20世纪90年代,日本、美国最先研发出高密度互连(High Density Interconnector,简称HDI)电路板技术,该技术在常规的线路板中引入了盲埋孔,精细的线宽/线距,能够制造常规多层板技术无法实现的薄型、多层、稳定、高密度互连印制线路板,具有成本低、布线密度高、易集成、电学性能及讯号准确稳定可靠、对射频/电磁波/静电抗干扰性强、热性能良好、设计效率高等诸多优势,顺应了电子产品向轻、小、薄和高可靠性的方向发展要求,满足了新一代电子封装技术不断提高的封装密度之需求。
















柔性电路板(FPC)应用于智能手机

多层柔性电路板(FPC)背面照片


研究方向之二:氧化物沟道薄膜晶体管

薄膜晶体管是一类利用纵向电场控制横向电流的三端器件,可作为开关元件用于驱动显示像素和构筑逻辑电路,也可作为传感单元用于光电/生物分子/气体分子的探测。氧化物半导体为沟道的TFT具有较高的场效应迁移率、较小的亚阈值摆幅、较大的开关比、较好的透明性、可低温制备以及与硅基工艺基本兼容等诸多优点,满足未来显示技术的发展要求,在显示技术的各类应用领域中展现出逐年上升的市场竞争力。



招生信息

   
招生专业
080501-材料物理与化学
0805Z2-半导体材料与器件
0702J1-纳米科学与技术
招生方向
电致变色器件
柔性电路板
表界面化学与物理

教育背景

2008-09--2011-06   兰州大学   博士
2005-09--2008-06   兰州大学   硕士
1999-09--2003-06   兰州大学   本科

工作经历

   
工作简历
2020-12~现在, 中国科学院宁波材料技术与工程研究所, 研究员
2014-01~2020-12,中国科学院宁波材料技术与工程研究所, 副研究员
2011-07~2013-12,中国科学院宁波材料技术与工程研究所, 助理研究员
社会兼职
2021-09-28-2028-09-27,中国感光学会电致变色分会青年理事, 青年理事

专利与奖励

   
专利成果
( 1 ) 一种长循环电致变色器件及其制作方法, 发明专利, 2023, 第 1 作者, 专利号: CN116590661A

( 2 ) 一种新型电致变色离子存储层薄膜及其制备方法, 发明专利, 2023, 第 1 作者, 专利号: CN116540465A

( 3 ) 一种柔性高密度互连电路板及其制备方法, 发明专利, 2023, 第 4 作者, 专利号: CN116419504A

( 4 ) 一种长循环电致变色器件及其制作方法, 发明专利, 2023, 第 1 作者, 专利号: CN202310597458.9

( 5 ) 一种新型电致变色离子存储层薄膜及其制备方法, 发明专利, 2023, 第 1 作者, 专利号: CN202310568705.2

( 6 ) 一种电致变色可调反射镜及其制作方法, 2023, 第 1 作者, 专利号: CN113219754B

( 7 ) 一种互补型电致变色能量存储器件及其制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN113433756A

( 8 ) 一种新型电致变色可调反射镜及其制作方法, 发明专利, 2021, 第 1 作者, 专利号: CN113219754A

( 9 ) 一种双功能电致变色能量存储器件及其制作方法, 发明专利, 2020, 第 1 作者, 专利号: CN111665672A

( 10 ) 一种互补型电致变色器件及其制备方法, 发明专利, 2020, 第 1 作者, 专利号: CN111381412A

( 11 ) 一种双功能电致变色储能器件及其制作方法, 发明专利, 2020, 第 1 作者, 专利号: CN111308822A

( 12 ) 一种全固态电致变色器件及其制作方法, 发明专利, 2020, 第 1 作者, 专利号: CN111142304A

( 13 ) 一种制备五氧化二钒溶胶的方法、由其制备的薄膜及在锂离子电池中的应用, 发明专利, 2018, 第 1 作者, 专利号: CN107634214A

( 14 ) 全固态无机电致变色器件及其制备方法, 2017, 第 1 作者, 专利号: CN104570534B

( 15 ) 莫特晶体管及制备方法, 发明专利, 2016, 第 1 作者, 专利号: CN105633280A

( 16 ) 一种无机质子导电膜的制备方法, 2015, 第 5 作者, 专利号: CN102943247B

( 17 ) 全固态无机电致变色器件及其制备方法, 发明专利, 2015, 第 1 作者, 专利号: CN104570534A

( 18 ) 电致变色器件及其制备方法和应用, 发明专利, 2015, 第 1 作者, 专利号: CN104407483A

( 19 ) 一种柔性超薄玻璃的制备方法, 发明专利, 2014, 专利号: CN104045221A

( 20 ) 一种无机质子导电膜的制备方法, 发明专利, 2013, 第 5 作者, 专利号: CN102943247A

( 21 ) 一种无结薄膜晶体管的制作方法, 发明专利, 2012, 第 3 作者, 专利号: CN102623398A

( 22 ) 一种场效应晶体硅太阳能电池的制作方法, 发明专利, 2012, 第 3 作者, 专利号: CN102522453A

( 23 ) 一种薄膜晶体管及其制作方法, 发明专利, 2012, 第 1 作者, 专利号: CN102437178A

( 24 ) 一种隧穿结晶体硅太阳能电池的制作方法, 发明专利, 2012, 第 3 作者, 专利号: CN102427099A

( 25 ) 具有上/下转换发光结构的晶体硅太阳能电池及制备方法, 发明专利, 2012, 第 2 作者, 专利号: CN102364691A

( 26 ) 一种晶体硅太阳能电池的制作方法, 发明专利, 2012, 第 3 作者, 专利号: CN102332495A

出版信息

   
发表论文
[1] Zihong Gao, Chengli Zhang, Qiang Wang, Guanglong Xu, Guoyou Gan*, and Hongliang Zhang*, 张洪亮. Emerging Non-Noble-Metal Atomic Layer Deposited Copper as Seeds for Electroless Copper Deposition. Materials[J]. 2024, [2] Zihong Gao, Chengli Zhang, Qiang Wang, Guanglong Xu, Junhua Gao, Hongtao Cao,* and Hongliang Zhang*, 张洪亮. Improved Electrical Resistivity of Atomic-Layer-Deposited Copper Thin Films on Polyimide Substrates by an In Situ ZnO Interlayer. ACS Applied Materials & Interfaces[J]. 2024, 16: 1876-1882, [3] Shichen Weng, Chengli Zhang, Qiang Wang, Guanglong Xu, Jumei Zhou, Kunrun Song, A.A. Rogachev, M.A. Yarmolenko, Hongtao Cao*, and Hongliang Zhang*, 张洪亮. In Situ Formation of Solid Electrolyte Interphase for Improved Cyclability of Electrochromic Tungsten Oxide Thin Films. Surfaces and Interfaces[J]. 2024, 46: 103992-, [4] Shichen Weng, Zhenhu Cao, Kunrun Song, Wentao Chen, Ran Jiang, A.A. Rogachev, M.A. Yarmolenko, Jumei Zhou*, and Hongliang Zhang*, 张洪亮. Constructing an Al3+/Zn2+-based solid electrolyte interphase to enable extraordinarily stable Al3+-based electrochromic devices. ACS Applied Materials & Interfaces[J]. 2024, [5] Xiaofang Fu, Kun Li, Chengli Zhang, Qiang Wang, Guanglong Xu, A.A. Rogachev, M.A. Yarmolenko, Hongtao Cao, and Hongliang Zhang*, 张洪亮. Homogeneous and Nanogranular Prussian Blue to Enable Long-term-stable Electrochromic Devices. ACS Applied Materials & Interfaces[J]. 2024, [6] Xiaofang Fu, Zhuohui Zhang, Zhenhu Cao, Alexandr Alexandrovich Rogachev, Maxim Anatolievich Yarmolenko, Tao Chen, Hongtao Cao, Hongliang Zhang, JuiMing Yeh. Mechanistic Insights into Anion-Induced Electrochromism of Ru(II)-Based Metallo-Supramolecular Polymer. POLYMERS[J]. 2023, 15(24): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10747135/.
[7] Chunjian Wang, Weiping Xie, Hongtao Cao, Qiang Wang, Chengli Zhang, Guanglong Xu, Junhua Gao, and Hongliang Zhang*. In Situ Raman Observation of Zinc-Induced Structural Dynamics and Charge Transfer of a Layered V2O5. Journal of The Electrochemical Society[J]. 2023, 170: 083511-, [8] Zihong Gao, Chengli Zhang, Junhua Gao, Qiang Wang, Guanglong Xu, Hongtao Cao, Hongliang Zhang. Nucleation and growth of low resistivity copper thin films on polyimide substrates by low-temperature atomic layer deposition. APPLIED SURFACE SCIENCE[J]. 2023, 638: http://dx.doi.org/10.1016/j.apsusc.2023.158072.
[9] Song, Kunrun, Weng, Shichen, Zhou, Jumei, Jiang, Ran, Cao, Hongtao, Zhang, Hongliang. Tunable Optical Constants of Aluminum Tungsten Bronzes in Electrochromic Tungsten Oxide Thin Films. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2023, 127(36): 18036-18042, http://dx.doi.org/10.1021/acs.jpcc.3c03521.
[10] Liu, Sheng, Zhang, Hongliang, Zhang, Xin, Wang, Qiang, Zhang, Chengli, Jiang, Ran, Gao, Junhua, Liang, Lingyan, Cao, Hongtao. Understanding Electrochemical Intercalation of Al3+ Cation into the WO3 Electrochromic Electrode from Solid Electrolyte Interphase and Mass Changes. ACS APPLIED ENERGY MATERIALS[J]. 2022, 5(2): 1833-1839, http://dx.doi.org/10.1021/acsaem.1c03242.
[11] Wang, Chunjian, Zhang, Xinlei, Liu, Sheng, Zhang, Hongliang, Wang, Qiang, Zhang, Chengli, Gao, Junhua, Liang, Lingyan, Cao, Hongtao. Interfacial Charge Transfer and Zinc Ion Intercalation and Deintercalation Dynamics in Flexible Multicolor Electrochromic Energy Storage Devices. ACS APPLIED ENERGY MATERIALS[J]. 2022, 5(1): 88-97, http://dx.doi.org/10.1021/acsaem.1c02508.
[12] Zhang, Zhuohui, Xie, Weiping, Li, Jia, Zhang, Hongliang, Wang, Qiang, Zhang, Chengli, Xu, Guanglong, Gao, Junhua, Rogachev, A A, Cao, Hongtao. In Situ Raman Observation of Dynamically Structural Transformation Induced by Electrochemical Lithium Intercalation and Deintercalation from Multi-Electrochromic V2O5 Thin Films. ADVANCED MATERIALS INTERFACES[J]. 2022, 9(26): http://dx.doi.org/10.1002/admi.202200883.
[13] Zhenhua Wang, Xin Zhang, Hongliang Zhang, Fangfang Ge, Qiang Wang, Chengli Zhang, Guanglong Xu, Junhua Gao, A. A. Rogachev, Hongtao Cao. Real-Time Mass Change: An Intrinsic Indicator to Dynamically Probe the Electrochemical Degradation Evolution in WO3. Advanced Materials Interfaces[J]. 2022, 9(19): https://onlinelibrary.wiley.com/doi/10.1002/admi.202200340.
[14] Gao, Wenjie, Wang, Xinpeng, Gao, Junhua, Liang, Lingyan, Zhang, Hongliang, Luo, Yunjie, Cao, Hongtao. Microstructural and optical characterization of polymer nanotemplates with different morphologies. VACUUM[J]. 2021, 193: http://dx.doi.org/10.1016/j.vacuum.2021.110512.
[15] Wang, Chunjian, Zhang, Xinlei, Liu, Sheng, Zhang, Hongliang, Wang, Qiang, Zhang, Chengli, Gao, Junhua, Liang, Lingyan, Cao, Hongtao. Interfacial Charge Transfer and Zinc Ion Intercalation and Deintercalation Dynamics in Flexible Multicolor Electrochromic Energy Storage Devices. ACS APPLIED ENERGY MATERIALS. 2021, [16] Wang, Kun, Zhang, Hongliang, Xie, Weiping, Chen, Guoxin, Jiang, Ran, Tao, Kai, Liang, Lingyan, Gao, Junhua, Cao, Hongtao. Unraveling the Role of Water on the Electrochromic and Electrochemical Properties of Nickel Oxide Electrodes in Electrochromic Pseudocapacitors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY[J]. 2021, 168(11): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000717258700001.
[17] Wang, Zhenhua, Zhang, Liaolin, Zhang, Hongliang, Jiang, Ran, Liang, Lingyan, Gao, Junhua, Cao, Hongtao. Mechanistic insights into the dry prelithiated WO3 thin films in electrochromic devices. SOLID STATE IONICS[J]. 2021, 373: http://dx.doi.org/10.1016/j.ssi.2021.115814.
[18] Zhang, Hongliang, Liu, Sheng, Xu, Tao, Xie, Weiping, Chen, Guoxin, Liang, Lingyan, Gao, Junhua, Cao, Hongtao. Aluminum-ion-intercalation nickel oxide thin films for high-performance electrochromic energy storage devices. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2021, [19] Pei, Yu, Liang, Lingyan, Wang, XiaoLong, Wang, Kun, Zhang, HengBo, Wu, ZhenDong, Wu, HaiJuan, Zhang, Hongliang, Gao, Junhua, Cao, Hongtao. Substrate-bias-aided preparation and properties of amorphous gallium oxide films and their deep-ultraviolet photodetectors. CERAMICS INTERNATIONAL[J]. 2021, 47(22): 32138-32143, http://dx.doi.org/10.1016/j.ceramint.2021.08.105.
[20] Wang, Kun, Zhang, Hongliang, Chen, Guoxin, Tian, Tian, Tao, Kai, Liang, Lingyan, Gao, Junhua, Cao, Hongtao. Long-term-stable WO3-PB complementary electrochromic devices. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 861: http://dx.doi.org/10.1016/j.jallcom.2020.158534.
[21] Wang, Kun, Tao, Kai, Jiang, Ran, Zhang, Hongliang, Liang, Lingyan, Gao, Junhua, Cao, Hongtao. A Self-Bleaching Electrochromic Mirror Based on Metal Organic Frameworks. MATERIALS[J]. 2021, 14(11): http://dx.doi.org/10.3390/ma14112771.
[22] Wang, Zhenhua, Chen, Guoxin, Zhang, Hongliang, Liang, Lingyan, Gao, Junhua, Cao, Hongtao. In situ TEM investigation of hexagonal WO3 irreversible transformation to Li2WO4. SCRIPTA MATERIALIA[J]. 2021, 203: http://dx.doi.org/10.1016/j.scriptamat.2021.114090.
[23] 陈炜东, 骆军, 曹鸿涛, 梁凌燕, 张洪亮, 张莉, 诸葛飞. CuS/ZnS/ITO透明忆阻器的制备及其突触性能. 材料科学与工程学报[J]. 2021, 39(1): 30-34, http://lib.cqvip.com/Qikan/Article/Detail?id=7103941842.
[24] 张洪亮. Boosting charge-transfer kinetics and cyclic properties of complementary WO3-NiO electrochromic devices via SnOx interfacial layer. Journal of Science-Advanced Materials and Devices. 2021, [25] Wang, Xiaoyu, Hu, Haibo, Li, Xiaoyun, Gao, Junhu, Wang, Zhenyu, Liang, Lingyan, Zhang, Hongliang, Zhuge, Fei, Cao, Hongtao. Specific phase modulation and infrared photon confinement in solar selective absorbers. APPLIED MATERIALS TODAY[J]. 2020, 18: http://dx.doi.org/10.1016/j.apmt.2019.100533.
[26] 竺臻楠, 胡令祥, 俞家欢, 张洪亮, 梁凌燕, 张莉, 曹鸿涛, 诸葛飞. 溶液法制备全碳忆阻器. 材料科学与工程学报[J]. 2020, 38(1): 64-67, https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFDLAST2020&filename=CLKX202001013&v=MTUyMzdidkJKaUhBZHJHNEhOSE1ybzlFWjRSOGVYMUx1eFlTN0RoMVQzcVRyV00xRnJDVVI3cWVadWR1Rnl6bFU=.
[27] Duan, Hongxiao, Javaid, Kashif, Liang, Lingyan, Huang, Lu, Yu, Jiahuan, Zhang, Hongliang, Gao, Junhua, Zhuge, Fei, Chang, TingChang, Cao, Hongtao. Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2020, 14(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000506870300001.
[28] Hu, Haibo, Gao, Wenjie, Zang, Rui, Gao, Junhua, Tang, Shiwei, Li, Xiaoyun, Liang, Lingyan, Zhang, Hongliang, Cao, Hongtao. Direct Growth of Vertically Orientated Nanocavity Arrays for Plasmonic Color Generation. ADVANCED FUNCTIONAL MATERIALS[J]. 2020, 30(32): https://www.webofscience.com/wos/woscc/full-record/WOS:000541464300001.
[29] Qiu, Dong, Ji, Hao, Zhang, Xinlei, Zhang, Hongliang, Cao, Hongtao, Chen, Guoxin, Tian, Tian, Chen, Zhiyong, Guo, Xing, Liang, Lingyan, Gao, Junhua, Fei Zhuge. Electrochromism of Nanocrystal-in-Glass Tungsten Oxide Thin Films under Various Conduction Cations. INORGANIC CHEMISTRY[J]. 2019, 58(3): 2089-2098, https://www.webofscience.com/wos/woscc/full-record/WOS:000458085900042.
[30] Wang, Haiping, Mi, Dongbo, Wang, Wanxu, Zhang, Hongliang, Tong, Dongsheng, Wang, Shengjiang, Gao, Feng. Latent Fingerprint Visualization and Subsequent DNA Extraction Using Electron Beam Evaporation of Metallic Ultra-Thin Films. CURRENT NANOSCIENCE[J]. 2019, 15(3): 248-253, [31] Rui Zang, Hu, Haibo, Li, Xiaoyun, Gao, Junhua, Liang, Lingyan, Zhang, Hongliang, Fei Zhuge, Jun Luo, Cao, Hongtao. Broadband hyperbolic metamaterial covering the whole visible-light region. OPTICS LETTERS[J]. 2019, 44(12): 2970-2973, https://www.webofscience.com/wos/woscc/full-record/WOS:000471636700007.
[32] Wu, Weihua, Liang, Lingyan, Yu, Jingjing, Xiao, Xi, Zhang, Hongliang, Gao, Junhua, Zhuge, Fei, Chang, TingChang, Lan, Linfeng, Cao, Hongtao. Aqueous solution-processed, self-flattening AlOx:Y dielectrics for fully-transparent thin-film transistors. CERAMICS INTERNATIONAL[J]. 2019, 45(13): 15883-15891, http://dx.doi.org/10.1016/j.ceramint.2019.05.093.
[33] 张洪亮. Structural and electrochromic properties of undoped and Mo-doped V2O5 thin films by a two-electrode electrodepositon. Journal of Nanoscience and Nanotechnology. 2018, [34] Wu, Jiao, Qiu, Dong, Zhang, Hongliang, Cao, Hongtao, Wang, Wei, Liu, Zhaoping, Tian, Tian, Liang, Lingyan, Gao, Junhua, Zhuge, Fei. Flexible Electrochromic V2O5 Thin Films with Ultrahigh Coloration Efficiency on Graphene Electrodes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY[J]. 2018, 165(5): D183-D189, http://ir.nimte.ac.cn/handle/174433/16909.
[35] Yu, Jingjing, Javaid, Kashif, Liang, Lingyan, Wu, Weihua, Liang, Yu, Song, Anran, Zhang, Hongliang, Shi, Wen, Chang, TingChang, Cao, Hongtao. High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction. ACS APPLIED MATERIALS & INTERFACES[J]. 2018, 10(9): 8102-8109, http://ir.nimte.ac.cn/handle/174433/16763.
[36] Song, Anran, Javaid, Kashif, Liang, Yu, Wu, Weihua, Yu, Jingjing, Liang, Lingyan, Zhang, Hongliang, Lan, Linfeng, Chang, TingChang, Cao, Hongtao. Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2018, 12(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000433591900005.
[37] Qiu, Dong, Wu, Jiao, Liang, Lingyan, Zhang, Hongliang, Cao, Hongtao, Yong, Wei, Tian, Tian, Gao, Junhua, Fei Zhuge. Structural and Electrochromic Properties of Undoped and Mo-Doped V2O5 Thin Films by a Two- Electrode Electrodeposition. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 18(11): 7502-7507, http://ir.nimte.ac.cn/handle/174433/17076.
[38] 卜彦强, 马德伟, 宋琨, 曹鸿涛, 吴爱国, 王立平, 陈亮, 金亦君, 徐裕, 张莉, 梁凌燕, 张洪亮, 高俊华, 诸葛飞. 低温制备N-Fe共掺杂TiO2-SiO2可见光催化复合薄膜. 材料科学与工程学报[J]. 2018, 36(6): 921-926, http://lib.cqvip.com/Qikan/Article/Detail?id=6100112754.
[39] 胡令祥, 施思齐, 曹鸿涛, 梁凌燕, 张洪亮, 高俊华, 诸葛飞. 高温处理对ZnO薄膜及其忆阻性能的影响. 材料科学与工程学报[J]. 2018, 36(4): 564-567, http://ir.nimte.ac.cn/handle/174433/16525.
[40] 王洋, 焦雷, 赵飞文, 李惠, 郑秀, 曹鸿涛, 梁凌燕, 张洪亮, 高俊华, 诸葛飞. ZnO 自整流忆阻器及其神经突触行为. 材料科学与工程学报[J]. 2018, 36(5): 726-729, http://lib.cqvip.com/Qikan/Article/Detail?id=676666458.
[41] Gao, Junhua, Wu, Xingzhi, Li, Qiuwu, Du, Shiyu, Huang, Feng, Liang, Lingyan, Zhang, Hongliang, Zhuge, Fei, Cao, Hongtao, Song, Yinglin. Template-Free Growth of Well-Ordered Silver Nano Forest/Ceramic Metamaterial Films with Tunable Optical Responses. ADVANCED MATERIALS[J]. 2017, 29(16): http://ir.nimte.ac.cn/handle/174433/13870.
[42] Wang, Xiaoyu, Gao, Junhua, Hu, Haibo, Zhang, Hongliang, Liang, Lingyan, Javaid, Kashif, Fei Zhuge, Cao, Hongtao, Wang, Le. High-temperature tolerance in WTi-Al2O3 cermet-based solar selective absorbing coatings with low thermal emissivity. NANO ENERGY[J]. 2017, 37: 232-241, http://dx.doi.org/10.1016/j.nanoen.2017.05.036.
[43] Hu, Lingxiang, Fu, Sheng, Chen, Youhu, Cao, Hongtao, Liang, Lingyan, Zhang, Hongliang, Gao, Junhua, Wang, Jingrui, Zhuge, Fei. Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films. ADVANCED MATERIALS[J]. 2017, 29(24): http://ir.nimte.ac.cn/handle/174433/13766.
[44] 李久朋, 马德伟, 曹鸿涛, 竺立强, 李俊, 李康, 梁凌燕, 张洪亮, 高俊华, 诸葛飞. 一步掩膜法制备ZnO纳米线忆阻器. 材料科学与工程学报[J]. 2017, 35(4): 592-595, http://ir.nimte.ac.cn/handle/174433/13346.
[45] Xie, Yufang, Javaid, Kashif, Gao, Junhua, Zhang, Hongliang, Liang, Lingyan, Fei Zhuge, Cao, Hongtao, Wang, Le, Lu, Yicheng. Combined control of the cation and anion to make ZnSnON thin films for visible-light phototransistors with high responsivity. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2017, 5(26): 6480-6487, http://ir.nimte.ac.cn/handle/174433/13732.
[46] Zhang, Lili, Li, Long, Zhang, Hongliang, Cao, Hongtao, Liang, Lingyan, Gao, Junhua, Zhuge, Fei, Zhou, Jumei. The same batch enabled threshold voltage tuning for vertically- or laterally-gated transparent InZnO thin-film transistors. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2017, 214(6): http://ir.nimte.ac.cn/handle/174433/13809.
[47] 潘若冰, 胡丽娟, 曹鸿涛, 竺立强, 李俊, 李康, 梁凌燕, 张洪亮, 高俊华, 诸葛飞. 基于ZnO忆阻器的神经突触仿生电子器件. 材料科学与工程学报[J]. 2017, 35(2): 232-236, http://ir.nimte.ac.cn/handle/174433/13402.
[48] Zhang, Lili, Li, Long, Zhang, Hongliang, Cao, Hongtao, Liang, Lingyan, Gao, Junhua, Zhuge, Fei, Zhou, Jumei. The same batch enabled threshold voltage tuning for vertically- or laterally-gated transparent InZnO thin-film transistors. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2017, 214(6): http://ir.nimte.ac.cn/handle/174433/13809.
[49] Xu, D, Shangguan, X N, Wang, S M, Cao, H T, Liang, L Y, Zhang, H L, Gao, J H, Long, W M, Wang, J R, Zhuge, F. Coexistence of two types of metal filaments in oxide memristors. AIP ADVANCES[J]. 2017, 7(2): http://ir.nimte.ac.cn/handle/174433/14012.
[50] Liang, Lingyan, Zhang, Shengnan, Wu, Weihua, Zhu, Liqiang, Xiao, Hui, Liu, Yanghui, Zhang, Hongliang, Javaid, Kashif, Cao, Hongtao. Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage. APPLIED PHYSICS LETTERS[J]. 2016, 109(17): http://www.corc.org.cn/handle/1471x/2229280.
[51] Li, Long, Zhang, Hongliang, Cao, Hongtao, Zhang, Lili, Liang, Lingyan, Gao, Junhua, Zhuge, Fei, Xiang, Junhuai, Zhou, Jumei. Proton conducting sodium-alginate-gated oxide thin-film transistors with varying device structure. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2016, 213(12): 3103-3109, [52] Pan, Ruobing, Li, Jun, Zhuge, Fei, Zhu, Liqiang, Liang, Lingyan, Zhang, Hongliang, Gao, Junhua, Cao, Hongtao, Fu, Bing, Li, Kang. Synaptic devices based on purely electronic memristors. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://www.corc.org.cn/handle/1471x/2235169.
[53] Wang, Mei, Liang, Lingyan, Luo, Hao, Zhang, Shengnan, Zhang, Hongliang, Javaid, Kashif, Cao, Hongtao. Threshold Voltage Tuning in a-IGZO TFTs With Ultrathin SnOx Capping Layer and Application to Depletion-Load Inverter. IEEE ELECTRON DEVICE LETTERS[J]. 2016, 37(4): 422-425, http://ir.nimte.ac.cn/handle/174433/13040.
[54] Gao, Junhua, Wang, Xiaoyu, Yang, Bing, Tu, Chengjun, Liang, Lingyan, Zhang, Hongliang, Fei Zhuge, Cao, Hongtao, Zou, Yousheng, Yu, Ke, Xia, Fei, Han, Yingying. Plasmonic AgAl Bimetallic Alloy Nanoparticle/Al2O3 Nanocermet Thin Films with Robust Thermal Stability for Solar Thermal Applications. ADVANCED MATERIALS INTERFACES[J]. 2016, 3(16): 1600248-1-1600248-10, http://ir.imr.ac.cn/handle/321006/76305.
[55] Wang, Jingrui, Pan, Ruobing, Cao, Hongtao, Wang, Yang, Liang, Lingyan, Zhang, Hongliang, Gao, Junhua, Zhuge, Fei. Anomalous rectification in a purely electronic memristor. APPLIED PHYSICS LETTERS[J]. 2016, 109(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000386152800063.
[56] Qin, Ruifeng, Cao, Hongtao, Liang, Lingyan, Xie, Yufang, Zhuge, Fei, Zhang, Hongliang, Gao, Junhua, Javaid, Kashif, Liu, Caichi, Sun, Weizhong. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions. APPLIED PHYSICS LETTERS[J]. 2016, 108(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000374230700025.
[57] Javaid, K, Xie, Y F, Luo, H, Wang, M, Zhang, H L, Gao, J H, Zhuge, F, Liang, L Y, Cao, H T. The electrical properties of n-ZnO/p-SnO heterojunction diodes. APPLIED PHYSICS LETTERS[J]. 2016, 109(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000384558700065.
[58] Yong, W, Zhang, H L, Cao, H T, Tian, T, Gao, J H, Liang, L Y, Zhuge, F. Effect of post-annealing on structural and electrochromic properties of Mo-doped V2O5 thin films. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY[J]. 2016, 77(3): 604-609, https://www.webofscience.com/wos/woscc/full-record/WOS:000371158500010.
[59] Zhang, Hongliang, Zhu, Liqiang, Guo, Liqiang, Liu, Yanghui, Wan, Qing. n-type Polycrystalline Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY[J]. 2015, 31(1): 65-69, https://www.webofscience.com/wos/woscc/full-record/WOS:000347904300010.
[60] Li, Xiuxia, Liang, Lingyan, Cao, Hongtao, Qin, Ruifeng, Zhang, Hongliang, Gao, Junhua, Zhuge, Fei. Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions. APPLIED PHYSICS LETTERS[J]. 2015, 106(13): http://ir.nimte.ac.cn/handle/174433/12554.
[61] Liu, Quan, Liang, Lingyan, Cao, Hongtao, Luo, Hao, Zhang, Hongliang, Li, Jun, Li, Xiuxia, Deng, Fuling. Tunable crystallographic grain orientation and Raman fingerprints of polycrystalline SnO thin films. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2015, 3(5): 1077-1081, https://www.webofscience.com/wos/woscc/full-record/WOS:000348300300022.
[62] Zhuge, Fei, Li, Jun, Chen, Hao, Wang, Jun, Zhu, Liqiang, Bian, Baoru, Fu, Bing, Wang, Qin, Li, Le, Pan, Ruobing, Liang, Lingyan, Zhang, Hongliang, Cao, Hongtao, Zhang, Hong, Li, Zhicheng, Gao, Junhua, Li, Kang. Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores. APPLIEDPHYSICSLETTERS[J]. 2015, 106(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000350546600062.
[63] Deng, Fuling, Cao, Hongtao, Liang, Lingyan, Li, Jun, Gao, Junhua, Zhang, Hongliang, Qin, Ruifeng, Liu, Caichi. Determination of the basic optical parameters of ZnSnN2. OPTICS LETTERS[J]. 2015, 40(7): 1282-1285, https://www.webofscience.com/wos/woscc/full-record/WOS:000352154600038.
[64] Zhuge, Fei, Li, Kang, Fu, Bing, Zhang, Hongliang, Li, Jun, Chen, Hao, Liang, Lingyan, Gao, Junhua, Cao, Hongtao, Liu, Zhimin, Luo, Hao. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells. AIP ADVANCES[J]. 2015, 5(5): https://doaj.org/article/6f4c54f746564ae885735cc3c1113824.
[65] Zhou JuMei, Gao XiaoHong, Zhang HongLiang. Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphosilicate Glass Electrolyte. CHINESE PHYSICS LETTERS[J]. 2015, 32(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000350955600036.
[66] Tu, C J, Gao, J H, Hui, S, Lou, D, Zhang, H L, Liang, L Y, Jin, A P, Zou, Y S, Cao, H T. Alloyed nanoparticle-embedded alumina nanocermet film: A new attempt to improve the thermotolerance. APPLIED SURFACE SCIENCE[J]. 2015, 331: 285-291, http://dx.doi.org/10.1016/j.apsusc.2015.01.064.
[67] Wan Xiang, Liu YangHui, Zhang HongLiang. Effects of H3PO4 Treated Porous SiO2 on Proton Conductivity and Performances of EDL-TFTs. JOURNAL OF INORGANIC MATERIALS[J]. 2014, 29(5): 482-486, https://www.webofscience.com/wos/woscc/full-record/WOS:000336701300005.
[68] 张洪亮. Low-voltage InGaZnO thin-film transistors gated by SiO2 proton conducting films. Advanced Materials Research. 2014, [69] Zhu, Li Qiang, Liu, Yang Hui, Zhang, Hong Liang, Xiao, Hui, Guo, Li Qiang. Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications. APPLIED SURFACE SCIENCE[J]. 2014, 288(1): 430-434, http://dx.doi.org/10.1016/j.apsusc.2013.10.051.
[70] Liu, Yanghui, Zhu, Liqiang, Guo, Liqiang, Zhang, Hongliang, Xiao, Hui. Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY[J]. 2014, 30(8): 835-838, https://www.webofscience.com/wos/woscc/full-record/WOS:000340552000018.
[71] Wan Xiang, Liu YangHui, Zhang HongLiang. Effects of H3PO4 Treated Porous SiO2 on Proton Conductivity and Performances of EDL-TFTs. JOURNAL OF INORGANIC MATERIALS[J]. 2014, 29(5): 482-486, https://www.webofscience.com/wos/woscc/full-record/WOS:000336701300005.
[72] Gao, Junhua, Tu, Chengjun, Liang, Lingyan, Zhang, Hongliang, Zhuge, Fei, Liang Wu, Cao, Hongtao, Yu, Ke. Silver Nanoparticles with an Armor Layer Embedded in the Alumina Matrix To Form Nanocermet Thin Films with Sound Thermal Stability. ACS APPLIED MATERIALS & INTERFACES[J]. 2014, 6(14): 11550-11557, https://www.webofscience.com/wos/woscc/full-record/WOS:000339472100090.
[73] Wang, Haiping, Zhang, Hongliang, Zhang, Hui, Bai, Junfeng, Ren, Jiashun, Wang, Shengjiang. (001) CeO2 films epitaxially grown on SrTiO3 (001) substrates by pulsed laser deposition using a metallic Ce target. VACUUM[J]. 2013, 87: 81-83, http://dx.doi.org/10.1016/j.vacuum.2012.07.012.
[74] Zhang, Hongliang, Guo, Liqiang, Wan, Qing. Nanogranular Al2O3 proton conducting films for low-voltage oxide-based homojunction thin-film transistors. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2013, 1(15): 2781-2786, http://www.irgrid.ac.cn/handle/1471x/755455.
[75] Wu, Guodong, Zhang, Hongliang, Zhou, Jumei, Huang, Aisheng, Wan, Qing. Proton conducting zeolite films for low-voltage oxide-based electric-double-layer thin-film transistors and logic gates. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2013, 1(36): 5669-5674, http://www.irgrid.ac.cn/handle/1471x/755623.
[76] 吴国栋, Guodong Wu a, Hongliang Zhangb, Zhaojun Guoc. Self-assembled low-power in-plane-gate transparent oxide-based thin film transistors gated by atomic-layer-deposited Al2O3. ADVANCED MATERIALS RESEARCHnull. 2013, 673—677-, http://www.irgrid.ac.cn/handle/1471x/755854.
[77] Zhang, Hongliang, Wan, Qing, Wan, Changjin, Wu, Guodong, Zhu, Liqiang. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors. APPLIED PHYSICS LETTERS[J]. 2013, 102(5): http://www.irgrid.ac.cn/handle/1471x/755443.
[78] Zhu, Li Qiang, Wu, Guo Dong, Zhou, Ju Mei, Dou, Wei, Zhang, Hong Liang, Wan, Qing. Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function. APPLIEDPHYSICSLETTERS[J]. 2013, 102(4): http://www.irgrid.ac.cn/handle/1471x/755429.
[79] 张洪亮. Proton Conducting Tungsten Oxide Electrolytes for Low-Voltage Transparent Oxide-based Thin-Film Transistors. Applied Physics Letters. 2013, [80] Zhu, Li Qiang, Sun, Jia, Wu, Guo Dong, Zhang, Hong Liang, Wan, Qing. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications. NANOSCALE[J]. 2013, 5(5): 1980-1985, http://www.irgrid.ac.cn/handle/1471x/755590.
[81] Guo, LiQiang, Yang, YuanYuan, Zhu, LiQiang, Wu, GuoDong, Zhou, JuMei, Zhang, HongLiang. Effects of humidity on performance of electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte. AIP ADVANCES[J]. 2013, 3(7): http://www.irgrid.ac.cn/handle/1471x/755615.
[82] Wu, Guodong, Zhang, Hongliang, Zhu, Liqiang, Dai, Mingzhi, Cui, Ping, Wan, Qing. In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics. IEEE ELECTRON DEVICE LETTERS[J]. 2012, 33(4): 531-533, http://www.irgrid.ac.cn/handle/1471x/755228.
[83] Zhu, Liqiang, Wu, Guodong, Zhou, Jumei, Zhang, Hongliang, Wan, Qing. Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing. IEEE ELECTRON DEVICE LETTERS[J]. 2012, 33(12): 1723-1725, http://www.irgrid.ac.cn/handle/1471x/755373.
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科研活动

   
科研项目
( 1 ) 氧化物质子导体薄膜及其在低电压无结薄膜晶体管中的应用, 负责人, 国家任务, 2014-01--2016-12
( 2 ) 以Al2O3质子导体为栅介质的无结薄膜晶体管, 负责人, 国家任务, 2013-04--2014-09
( 3 ) Al2O3纳米颗粒膜及其在低电压氧化物, 负责人, 地方任务, 2013-01--2015-01
( 4 ) 低电压无结双电层氧化物薄膜晶体管, 负责人, 地方任务, 2013-06--2014-06
( 5 ) 节能-装潢一体化多彩色全固态电致变色器件的研发, 负责人, 地方任务, 2015-07--2017-12
( 6 ) 全固态电致变色器件制备技术研发及相关专利普通实施许可, 负责人, 境内委托项目, 2017-12--2020-10
( 7 ) 基于Li+和Al3+的WO3薄膜活性界面特性与电致变色性能研究, 负责人, 国家任务, 2020-01--2023-12
( 8 ) 超高精密柔性电路板关键技术研发及产业化, 负责人, 地方任务, 2020-07--2024-06
( 9 ) 大尺寸柔性电致变色器件关键技术研发, 负责人, 境内委托项目, 2023-01--2024-12
( 10 ) 新能源汽车用电致变色智能节能天幕玻璃技术研发, 负责人, 地方任务, 2023-01--2025-12
( 11 ) 拉伸显示材料与器件(耐疲劳的电极材料及图案化工艺开发), 负责人, 国家任务, 2023-11--2026-10
( 12 ) 高性能柔性透明导电薄膜及制备技术研究, 负责人, 地方任务, 2024-01--2026-12
参与会议
(1)电致变色器件失效机制及长循环性能研究   第五届全国电致变色研讨会   2022-08-26

指导学生

现指导学生

傅晓芳  硕士研究生  19216  

廖利  硕士研究生  085600-材料与化工  

王纯建  博士研究生  19216  

培养研究生毕业情况

2022

2023届

张卓慧,硕士,就读于中国科学技术大学博士研究生

2022届

刘盛,硕士,就职于比亚迪股份有限公司

王振华,硕士,就读于山东大学博士研究生

2021届

王坤,硕士,就职于浙江大学

2020届

张鑫磊,硕士,就职于中芯国际集成电路制造有限公司

2019届 

邱栋,硕士,就读于复旦大学博士研究生 

2018届 

吴娇,硕士,就职于浙江大华技术股份有限公司 

2017届 

张莉莉,硕士,就职于中芯国际集成电路制造有限公司 

2016届 

雍微,硕士,就职于山西晋环科源环境资源科技有限公司 

李龙,硕士,就职于武汉新芯集成电路制造有限公司 

2015届

刘瑞超,硕士,就职于北京京东方光电科技有限公司