半导体器件及集成电路测试是验证产品设计、监控生产状况、保证产品质量、分析产品实效和指导应用的重要手段，贯穿着整个产业链，具有极其重要的作用。集成电路测试机通常内置电源、高精度源表、时钟板卡、数字板卡和模拟板卡等功能模块，是一套十分复杂的系统，目前高端半导体参数分析仪和集成电路测试机超过80%的市场份额被国外垄断。围绕半导体器件及集成电路测试领域的重要科学与技术问题，开展高精度源表、高速数字/模拟芯片测试板卡及IP设计、测试算法、系统软硬件集成等研究，具体包括：

1 集成电路设计与测试技术

2 仪器仪表工程

3 嵌入式系统设计与实现技术

招生专业：仪器仪表、电子信息、电子科学与技术、信号与系统、计算机等相关专业

招生数量：每年拟招收硕士生1名

080903-微电子学与固体电子学
080902-电路与系统
085400-电子信息

集成电路设计与测试
仪器仪表工程
嵌入式系统

2011-09--2016-01   中国科学院大学   工学博士

   

2017-04~现在, 中国科学院微电子研究所, 高级工程师

   

（1） 新型存储器件及集成研究集体, , 院级, 2018

[1] 余兆安, 姚志宏, 吴飞宏, 董大年, 黄泓键, 许晓欣. 一种阵列器件的测试电路及装置. CN 116741257 A, 2023-09-12.
[2] 姚志宏, 余兆安, 董大年, 吴飞宏, 梁圣法, 卢年端. 阵列器件测试装置及测试方法. CN: CN114264927A, 2022-04-01.
[3] 刘琦, 赵晓龙, 吴祖恒, 刘宇, 张凯平, 路程, 张培文, 赵盛杰, 姚志宏, 余兆安, 吕杭炳, 刘明. 非易失性存储方法及装置. CN: CN108922961A, 2018-11-30.
[4] 余兆安, 姚志宏, 霍宗亮, 龙世兵, 谢常青, 刘明. 一种对负载或输出进行限流保护的装置. CN: CN104242277A, 2014-12-24.
[5] 姚志宏, 余兆安, 吕杭炳, 霍宗亮, 谢常青, 刘明. 一种对阻变存储器阵列进行测试的系统. CN: CN104217766A, 2014-12-17.
[6] 冀永辉, 王凤虎, 丁川, 余兆安, 王琴, 龙世兵, 刘明. 一种基于差分技术的消除成像器件阈值偏差影响的方法. CN: CN102611852A, 2012-07-25.
[7] 冀永辉, 丁川, 王凤虎, 余兆安, 王琴, 龙世兵, 刘明. 一种光学传感器及其内部的成像器件. CN: CN102610620A, 2012-07-25.
[8] 龙世兵, 刘明, 刘琦, 吕杭炳, 李颖弢, 张森, 王艳, 连文泰, 张康玮, 王明, 张满红, 霍宗亮, 王琴, 刘璟, 余兆安, 李冬梅. 非挥发性电阻转变存储器及其制备方法. CN: CN102487122A, 2012-06-06.
[9] 余兆安, 龙世兵, 刘明, 张森, 刘琦, 柳江. 一种用于测试阻变存储器性能指标的限流电路. CN: CN101783183A, 2010-07-21.
[10] 余兆安, 贾锐, 龙世兵, 刘明, 陈晨. 产生磁场的装置及对低温探针台外加磁场的方法. CN: CN101783223A, 2010-07-21.

   

[1] 余兆安, 姚志宏, 董大年. 超稳定线性温控模块设计. 传感器与微系统[J]. 2022, 41(1): 78-80, http://lib.cqvip.com/Qikan/Article/Detail?id=7106391055.
[2] Zheng, Xu, Liu, Jing, Dong, Danian, Yu, Zhaoan, Song, Jiayou, Liou, Juin J, Xu, Xiaoxin, Yang, Xiaonan. Back-End-of-Line-Based Resistive RAM in 0.13 mu m Partially-Depleted Silicon-on-Insulator Process for Highly Reliable Irradiation-Resistant Application. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(1): 30-33, http://dx.doi.org/10.1109/LED.2020.3037072.
[3] 余兆安, 董大年, 姚志宏, 许晓欣, 吕杭炳. 一种忆阻器阵列的阻值调制测试系统. 微纳电子与智能制造. 2021, 3(4): 72-77, http://lib.cqvip.com/Qikan/Article/Detail?id=00002FUILH387JP0MNDO5JP16NR.
[4] 余兆安, 姚志宏, 董大年. 基于量子级联激光器的甲烷吸收谱. 微纳电子技术[J]. 2020, 57(12): 970-975, http://lib.cqvip.com/Qikan/Article/Detail?id=7103639087.
[5] Xu, Xiaoxin, Yu, Jie, Gong, Tiancheng, Yang, Jianguo, Yin, Jiahao, Dong, Da Nian, Luo, Qing, Liu, Jing, Yu, Zhaoan, Liu, Qi, Lv, Hangbing, Liu, Ming, IEEE. First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2020, [6] Dong, Hang, Long, Shibing, Sun, Haiding, Zhao, Xiaolong, He, Qiming, Qin, Yuan, Jian, Guangzhong, Zhou, Xuanze, Yu, Yangtong, Guo, Wei, Xiong, Wenhao, Hao, Weibing, Zhang, Ying, Xue, Huiwen, Xiang, Xueqiang, Yu, Zhaoan, Lv, Hangbing, Liu, Qi, Liu, Ming. Fast Switching beta-Ga2O3 Power MOSFET With a Trench-Gate Structure. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(9): 1385-1388, http://dx.doi.org/10.1109/LED.2019.2926202.
[7] 郑旭, 余兆安, 罗庆. 三维神经网络中Nb2O5-x突触器件的脉冲操作模式优化研究. 微纳电子与智能制造[J]. 2019, 71-75, http://lib.cqvip.com/Qikan/Article/Detail?id=00002FUILH387JP167DO5JP16NR.
[8] Xu Xiaoxin, Tai Lu, Gong Tiancheng, Yin Jiahao, Huang Peng, Yu Jie, Dong Da Nian, Luo Qing, Liu Jing, Yu Zhaoan, Zhu Xi, Wu Xiu Long, Liu Qi, Lv Hangbing, Liu Ming, IEEE. 40x Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip. 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2018, [9] Liu Jing, Xu Xiaoxin, Chen Chuanbing, Gong Tiancheng, Yu Zhaoan, Luo Qing, Yuan Peng, Dong Danian, Liu Qi, Long Shibing, Lu: Hangbing, Liu Ming. Analysis of tail bits generation of multilevel storage in resistive switching memory. 中国物理B：英文版[J]. 2018, 27(11): 626-629, http://lib.cqvip.com/Qikan/Article/Detail?id=676727061.
[10] He, Qiming, Mu, Wenxiang, Fu, Bo, Jia, Zhitai, Long, Shibing, Yu, Zhaoan, Yao, Zhihong, Wang, Wei, Dong, Hang, Qin, Yuan, Jian, Guangzhong, Zhang, Ying, Xue, Huiwen, Lv, Hangbing, Liu, Qi, Tang, Minghua, Tao, Xutang, Liu, Ming. Schottky Barrier Rectifier Based on (100) beta-Ga2O3 and its DC and AC Characteristics. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(4): 556-559, http://dx.doi.org/10.1109/LED.2018.2810858.
[11] Dong, Danian, Liu, Jing, Wang, Yuduo, Xu, Xiaoxin, Yuan, Peng, Chen, Chuanbing, Gong, Tiancheng, Luo, Qing, Ma, Haili, Yu, Zhaoan, Lv, Hangbing, Liu, Ming. The Impact of RTN Signal on Array Level Resistance Fluctuation of Resistive Random Access Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(5): 676-679, http://dx.doi.org/10.1109/LED.2018.2821681.
[12] Liu, Jing, Xu, Xiaoxin, Chen, Chuanbing, Gong, Tiancheng, Yu, Zhaoan, Luo, Qing, Yuan, Peng, Dong, Danian, Liu, Qi, Long, Shibing, Lv, Hangbing, Liu, Ming. Analysis of tail bits generation of multilevel storage in resistive switching memory. CHINESE PHYSICS B[J]. 2018, 27(11): http://dx.doi.org/10.1088/1674-1056/27/11/118501.
[13] 董大年, 汪毓铎, 吕杭炳, 姚志宏, 冯雪, 余兆安. 阻变存储阵列的自动化测试系统. 半导体技术[J]. 2017, 42(12): 956-959, http://lib.cqvip.com/Qikan/Article/Detail?id=673994559.
[14] Chen Chuanbing, Huo Zhangxing, Zhang Kun, Yu Zhaoan, Liu Jing, Gong Tiancheng, Dong Danian, Yuan Peng, Xu Xiaoxin, Lu: Hangbing, Liu Ming, Liu Qi, Long Shibing, Luo Qing, Xie Yuanlu. BEOL Based RRAM with One Extra-mask for Low Cost, Highly Reliable Embedded Application in 28 nm Node and Beyond. Electron Devices Meeting (IEDM) 2017 IEEE Internationalnull. 2017, http://159.226.55.106/handle/172511/18289.
[15] Long Shibing, Li Junfeng, Yu Zhaoan, Liu Jing, Gao Jianfeng, Yuan Peng, Dong Danian, Lu: Hangbing, Gong Tiancheng, Xu Xiaoxin, Luo Qing, Liu Ming, Liu Qi. 8-layers 3D Vertical RRAM with Excellent Scalability towards Storage Class Memory Applications. Electron Devices Meeting（IEDM）2017 IEEE Internationalnull. 2017, http://159.226.55.106/handle/172511/18288.
[16] 余兆安, 姚志宏, 梁圣法. 基于频率补偿的窄脉冲量子级联激光器快速驱动技术. 红外与激光工程[J]. 2016, 45(2): 0206002-01, http://lib.cqvip.com/Qikan/Article/Detail?id=667948594.
[17] 张美芸, 王国明, 余兆安, 李阳, 许定林, 吕杭炳, 刘琦, 刘明. The Statistics of Set Time of Oxide-based Resistive Switching Memory. 2016, http://159.226.55.106/handle/172511/16343.
[18] 余兆安, 姚志宏, 冯雪, 梁圣法, 吕铁良. 脉冲量子级联激光器吸收谱扫描方法. 微纳电子技术[J]. 2015, 52(7): 414-420, http://10.10.10.126/handle/311049/14903.
[19] Wang, Guoming, Long, Shibing, Yu, Zhaoan, Zhang, Meiyun, Ye, Tianchun, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Wang, Ming, Xu, Xiaoxin, Liu, Hongtao, Yang, Baohe, Sune, Jordi, Liu, Ming. Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation. APPLIED PHYSICS LETTERS[J]. 2015, 106(9): http://dx.doi.org/10.1063/1.4907604.
[20] Guoming Wang, Shibing Long, Zhaoan Yu, Meiyun Zhang, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, Ming Liu. Impact of program. NANOSCALE RESEARCH LETTERS. 2015, 10(1): http://dx.doi.org/10.1186/s11671-014-0721-2.
[21] 余兆安. 脉冲量子级联激光器吸收谱关键技术研究. 2015, [22] Zhang, Meiyun, Wang, Guoming, Long, Shibing, Yu, Zhaoan, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Miranda, Enrique, Sune, Jordi, Liu, Ming. A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured With the Width-Adjusting Pulse Operation Method. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(12): 1303-1306, http://dx.doi.org/10.1109/LED.2015.2493540.
[23] Wang, Guoming, Long, Shibing, Yu, Zhaoan, Zhang, Meiyun, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Yan, Xiaobing, Wang, Ming, Xu, Xiaoxin, Liu, Hongtao, Yang, Baohe, Liu, Ming. Impact of program/erase operation on the performances of oxide-based resistive switching memory. NANOSCALE RESEARCH LETTERS[J]. 2015, 10: http://www.irgrid.ac.cn/handle/1471x/1092111.
[24] Jin Lin, Zhang ManHong, Huo ZongLiang, Wang Yong, Yu ZhaoAn, Jiang DanDan, Chen JunNing, Liu Ming. A simple and accurate method for measuring program/erase speed in a memory capacitor structure. CHINESE PHYSICS B[J]. 2013, 22(1): http://dx.doi.org/10.1088/1674-1056/22/1/018501.
[25] JIN Lin, ZHANG ManHong, HUO ZongLiang, YU ZhaoAn, JIANG DanDan, WANG Yong, BAI Jie, CHEN JunNing, LIU Ming. Effect of high temperature annealing on the performance of MANOS charge trapping memory. 中国科学：技术科学英文版[J]. 2012, 55(4): 888-893, http://lib.cqvip.com/Qikan/Article/Detail?id=41095894.
[26] Jin, Lin, Zhang, Manhong, Huo, Zongliang, Yu, Zhaoan, Wang, Yong, Chen, Junning, Liu, Ming, Lin, Q, Claeys, C, Huang, D, Wu, H, Kuo, Y, Huang, R, Lai, K, Zhang, Y, Guo, Z, Wang, S, Liu, R, Jiang, T, Song, P, Lam, C. Reducing Formation Time of the Inversion Layer by Illumination around a Memory Capacitor. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012)null. 2012, 44(1): 1241-1245, http://www.corc.org.cn/handle/1471x/2157645.
[27] Jin Lin, Zhang ManHong, Huo ZongLiang, Yu ZhaoAn, Jiang DanDan, Wang Yong, Bai Jie, Chen JunNing, Liu Ming. Effect of high temperature annealing on the performance of MANOS charge trapping memory. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2012, 55(4): 888-893, http://lib.cqvip.com/Qikan/Article/Detail?id=41095894.
[28] Jiang, Dandan, Huo, Zongliang, Zhang, Manhong, Jin, Lin, Bai, Jie, Yu, Zhaoan, Liu, Jing, Wang, Qin, Yang, Xiaonan, Wang, Yong, Zhang, Bo, Chen, Junning, Liu, Ming. A novel junction-assisted programming scheme for Si-nanocrystal memory devices with improved performance. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2011, 26(11): http://www.corc.org.cn/handle/1471x/2155611.
[29] Jiang, Dandan, Zhang, Manhong, Huo, Zongliang, Wang, Qin, Liu, Jing, Yu, Zhaoan, Yang, Xiaonan, Wang, Yong, Zhang, Bo, Chen, Junning, Liu, Ming. A study of cycling induced degradation mechanisms in Si nanocrystal memory devices. NANOTECHNOLOGY[J]. 2011, 22(25): http://www.corc.org.cn/handle/1471x/2200840.
[30] Zhang, Manhong, Huo, Zongliang, Yu, Zhaoan, Liu, Jing, Liu, Ming. Unification of three multiphonon trap-assisted tunneling mechanisms. JOURNAL OF APPLIED PHYSICS[J]. 2011, 110(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000298254800103.
[31] He, Yuhui, Shao, Lubing, Scheicher, Ralph H, Grigoriev, Anton, Ahuja, Rajeev, Long, Shibing, Ji, Zhuoyu, Yu, Zhaoan, Liu, Ming. Differential conductance as a promising approach for rapid DNA sequencing with nanopore-embedded electrodes. APPLIED PHYSICS LETTERS[J]. 2010, 97(4): http://dx.doi.org/10.1063/1.3467194.

   

（ 1 ） 新型阻变存储器参数测试系统, 负责人, 中国科学院计划, 2020-01--2021-12
（ 2 ） 超宽带半导体器件, 负责人, 国家任务, 2018-05--2021-04
（ 3 ） 三维阻变存储器基础研究, 参与, 中国科学院计划, 2016-08--2022-12
（ 4 ） 存算一体计算芯片, 参与, 中国科学院计划, 2020-01--2024-12
（ 5 ） 基于阻变存储器的阵列控制器芯片研发及示范应用, 参与, 地方任务, 2020-07--2022-07
（ 6 ） 基于半导体参数分析仪的阵列级器件自动化测试系统, 参与, 中国科学院计划, 2019-10--2021-09
（ 7 ） 神经形态器件与电路的设计方法及工具研究, 负责人, 国家任务, 2021-12--2026-11
（ 8 ） 基于阻变存储器参数测试系统的存算一体应用模块开发, 负责人, 中国科学院计划, 2022-10--2024-09