基本信息
吴振华  男  博导  中国科学院微电子研究所
电子邮件: wuzhenhua@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号,微电子研究所
邮政编码: 100029

研究领域

先进技术节点CMOS关键工艺与器件架构,超陡亚阈值摆幅低功耗器件,电子自旋/能谷相关新型量子器件,纳米器件中的热电效应与探测,先进TCAD仿真技术与应用。

招生信息

每年计划招收硕士研究生1名,博士研究生(包括直博)1名。同时欢迎优秀本科生进组开展科研实习。

招生专业
080903-微电子学与固体电子学
080901-物理电子学
招生方向
FinFET, Nanowire FET, 新原理低功耗CMOS架构与关键技术
低维介观系统中电荷/自旋量子输运特性
深度学习方法与半导体器件TCAD仿真

教育背景

2006-09--2011-07   中国科学院半导体研究所   博士
2002-09--2006-07   南京大学   学士

教授课程

集成电路制造工艺与研究方法

获奖及荣誉

2016年度,中国科学院海外人才引进项目。



奖励信息
(1) 中国科学院大学优秀本科生指导教师, 研究所(学校), 2019
专利成果
[1] 罗彦娜, 殷华湘, 吴振华, 张青竹, 曹磊. 一种CFET结构、其制备方法以及应用其的半导体器件. CN: CN113206090A, 2021-08-03.

[2] 张青竹, 殷华湘, 曹磊, 张兆浩, 顾杰, 田佳佳, 李俊杰, 姚佳欣, 李永亮, 张永奎, 吴振华, 赵鸿滨, 罗军, 王文武, 屠海令, 叶甜春. 一种半导体器件的制备方法及半导体器件. CN: CN113178488A, 2021-07-27.

[3] 殷华湘, 顾杰, 张青竹, 许高博, 吴振华. 量子点器件及其制作方法. CN: CN108417635B, 2021-07-09.

[4] 吴振华, 甘维卓, 张兆浩, 张永奎, 李俊杰, 殷华湘, 朱慧珑, 郭鸿. 一种半导体器件及其制造方法、集成电路、电子设备. CN: CN112652664A, 2021-04-13.

[5] 李俊杰, 吴振华, 张青竹, 王文武. 包括纳米线的器件与其制作方法. CN: CN108878422B, 2021-01-22.

[6] 张青竹, 殷华湘, 闫江, 吴振华, 周章渝, 秦长亮, 张严波, 张永奎. 半导体器件及其制作方法. CN: CN107068769B, 2020-12-08.

[7] 顾杰, 殷华湘, 张青竹, 张兆浩, 吴振华. 一种量子点器件及其制备方法. CN: CN111900162A, 2020-11-06.

[8] 李永亮, 都安彦, 吴振华, 李超雷, 王文武. 一种半导体器件及其制作方法及包括该器件的电子设备. CN: CN110224029A, 2019-09-10.

[9] 李俊杰, 李永亮, 周娜, 杨涛, 张青竹, 王桂磊, 李俊峰, 吴振华, 殷华湘, 朱慧珑, 王文武. 纳米线、纳米线围栅器件以及纳米孔筛的制备方法. CN: CN110164762A, 2019-08-23.

[10] 吴振华, 李俊杰, 郭鸿, 甘维卓, 殷华湘, 朱慧珑, 王文武. 半导体器件和制作方法. CN: CN110061060A, 2019-07-26.

[11] 李俊杰, 王桂磊, 李永亮, 周娜, 杨涛, 傅剑宇, 李俊峰, 吴振华, 殷华湘, 朱慧珑, 王文武. 选择性刻蚀方法及纳米针尖结构的制备方法. CN: CN110002393A, 2019-07-12.

[12] 甘维卓, 张永奎, 李俊杰, 吴振华, 郭鸿, 殷华湘, 朱慧珑, 王文武. 冷源结构MOS晶体管及其制作方法. CN: CN109920842A, 2019-06-21.

[13] 吴振华, 郭鸿, 李俊杰. MOS器件的制作方法. CN: CN109712892A, 2019-05-03.

[14] 李俊杰, 吴振华, 李永亮, 周娜, 张青竹, 王桂磊, 李俊峰, 王文武. 环栅纳米线晶体管及其制备方法. CN: CN109599335A, 2019-04-09.

[15] 李俊杰, 吴振华, 李永亮, 唐波, 王红丽, 王文武. 一种纳米线沟道制作方法. 中国: CN108807149A, 2018-11-13.

[16] 李俊杰, 吴振华, 张丹, 罗军, 王文武. 一种纳米线的制作方法. 中国: CN108807170A, 2018-11-13.

[17] 张青竹, 殷华湘, 闫江, 吴振华, 周章渝, 秦长亮, 张严波, 张永奎. 半导体器件及其制作方法. 中国: CN107068769A, 2017-08-18.

出版信息

   
发表论文
[1] Wang, Zhen, Li, Xiaojing, Wu, Zhenhua. Electronic and optical properties of the edge states in phosphorene quantum rings. APPLIED SURFACE SCIENCE[J]. 2021, 541: https://www.webofscience.com/wos/woscc/full-record/WOS:000608916800006.
[2] Huang, Weixing, Zhu, Huilong, Zhang, Yongkui, Wu, Zhenhua, Jia, Kunpeng, Yin, Xiaogen, Li, Yangyang, Li, Chen, Ai, Xuezheng, Huo, Qiang, Li, Junfeng. Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. MICROELECTRONICS JOURNAL[J]. 2021, 114: http://dx.doi.org/10.1016/j.mejo.2021.105110.
[3] Zhang, ShuHui, Yang, Jin, Shao, DingFu, Wu, Zhenhua, Yang, Wen. Robust wavefront dislocations of Friedel oscillations in gapped graphene. PHYSICAL REVIEW B[J]. 2021, 103(16): http://dx.doi.org/10.1103/PhysRevB.103.L161407.
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[8] Xia, Xinyan, Guo, Shiying, Xu, Lili, Guo, Tingting, Wu, Zhenhua, Zhang, Shengli. Sensing Performance of SO2, SO3 and NO2 Gas Molecules on 2D Pentagonal PdSe2: A First-Principle Study. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(4): 573-576, http://dx.doi.org/10.1109/LED.2021.3059667.
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[10] Lin, Liangzhong, Pu, Qingmin, Shi, Zhiqiang, Li, Xiaojing, Zhang, Dong, Zhu, Jiaji, Wu, Zhenhua. Spin filtering in a HgTe topological insulator PN junction via Rashba spin-orbit interaction. SOLID STATE COMMUNICATIONS[J]. 2020, 313: http://dx.doi.org/10.1016/j.ssc.2020.113906.
[11] Huang, Weixing, Zhu, Huilong, Jia, Kunpeng, Wu, Zhenhua, Yin, Xiaogen, Huo, Qiang, Zhang, Yongkui. Investigation of device-circuit for negative capacitance vertical nanowire FETs based on SPICE model. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2020, 35(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000552686400001.
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[13] 张亚东, 贾昆鹏, 吴振华, 田汉民. 氧等离子体对少层MoS2及其场效应晶体管的影响研究. 电子元件与材料[J]. 2020, 39(5): 67-72, http://lib.cqvip.com/Qikan/Article/Detail?id=7101789958.
[14] Yao, Jiaxin, Yin, Huaxiang, Wu, Zhenhua, Tian, Jinshou. Novel Band-Edge Work Function Performance Modulation via NPT with PMOS1st/NMOS1st Laminated Stack for PMOS Low Power Target. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2020, 9(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000588313700001.
[15] 张亚东, 贾昆鹏, 吴振华, 田汉民. 二硫化钼场效应晶体管金属接触的研究进展. 微纳电子技术. 2020, 109-118, http://lib.cqvip.com/Qikan/Article/Detail?id=00002HGNKH5G7JP0MPDO7JP1MHR.
[16] Cheng, Xiaohong, Li, Yongliang, Liu, Haoyan, Zan, Ying, Lu, Yihong, Zhang, Qingzhu, Li, Junjie, Du, Anyan, Wu, Zhenhua, Luo, Jun, Wang, Wenwu. Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2020, 31(24): 22478-22486, https://www.webofscience.com/wos/woscc/full-record/WOS:000585906600004.
[17] Guo, Shiying, Wang, Yangyang, Hu, Xuemin, Zhang, Shengli, Qu, Hengze, Zhou, Wenhan, Wu, Zhenhua, Liu, Xuhai, Zeng, Haibo. Ultrascaled Double-Gate Monolayer SnS2 MOSFETs for High-Performance and Low-Power Applications. PHYSICAL REVIEW APPLIED[J]. 2020, 14(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000579526300002.
[18] Huang, Weixing, Zhu, Huilong, Wu, Zhenhua, Yin, Xiaogen, Huo, Qiang, Jia, Kunpeng, Li, Yangyang, Zhang, Yongkui. Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2020, 8: 879-884, https://doaj.org/article/307c1eaab704467ba5f2bf88741a7fbc.
[19] Radamson, Henry H, Zhu, Huilong, Wu, Zhenhua, He, Xiaobin, Lin, Hongxiao, Liu, Jinbiao, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Cui, Hushan, Gao, Jianfeng, Yang, Hong, Du, Yong, Xu, Buqing, Li, Ben, Zhao, Xuewei, Yu, Jiahan, Dong, Yan, Wang, Guilei. State of the Art and Future Perspectives in Advanced CMOS Technology. NANOMATERIALSnull. 2020, 10(8): https://doaj.org/article/1e19463b7889450dac09ad0268d34ded.
[20] Huang, Weixing, Zhu, Huilong, Jia, Kunpeng, Yin, Xiaogen, Li, Chen, Zhang, Yongkui, Xiang, Jinjuan, Wu, Zhenhua, Gan, Lurong. Simulations of VNW-FETs with Adjustable Spacer-Like Negative Capacitors Based on Experimental Data. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2019, 8(2): Q38-Q42, https://www.webofscience.com/wos/woscc/full-record/WOS:000460604800002.
[21] Li, Xiaojing, Yan, Wen, Lin, Liangzhong, Wu, Zhenhua. Electric field tuning of spin splitting in topological insulator quantum dots doped with a single magnetic ion. SCIENTIFIC REPORTS[J]. 2019, 9(1): http://dx.doi.org/10.1038/s41598-019-45067-5.
[22] Hou Zhaozhao, Yao Jiaxin, Gu Jie, Wu Zhenhua, Yin Huaxiang, Claeys C, Huang R, Wu H, Lin Q, Liang S, Song P, Guo Z, Lai K, Zhang Y, Qu X, Lung HL, Yu W. IMPACT OF ANNEALING TEMPERATURE ON PERFORMANCE ENHANCEMENT FOR CHARGE TRAPPING MEMORY WITH (HfO2)(0.9)(Al2O3)(0.1) TRAPPING LAYER. 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)null. 2019, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000490874500189.
[23] Yao Jiaxin, Hou Zhaozhao, Xiong Wenjuan, Zhang Qingzhu, Wu Zhenhua, Yin Huaxiang, Claeys C, Huang R, Wu H, Lin Q, Liang S, Song P, Guo Z, Lai K, Zhang Y, Qu X, Lung HL, Yu W. Comprehensive Investigation of Flat-band Voltage Modulation by High-K NPT for Advanced HKMG Technology. 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)null. 2019, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000490874500074.
[24] Liu, Jiangtao, Fan, Menghui, Luo, Kun, Yang, Qin, Li, Jun, Wu, Zhenhua. Two-Dimensional Heterojunction Photovoltaic Cells with Low Spontaneous-Radiation Loss and High Efficiency Limit. PHYSICAL REVIEW APPLIED[J]. 2019, 12(3): [25] Yao, Jiaxin, Wu, Zhenhua, Yin, Huaxiang. Multi-Vt Performance Dependence on Capping Layer Position by NPT for PMOS Device Applications. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2019, 8(8): N107-N112, [26] Yang, Meiyin, Deng, Yongcheng, Wu, Zhenhua, Cai, Kaiming, Edmonds, Kevin William, Li, Yucai, Sheng, Yu, Wang, Sumei, Cui, Yan, Luo, Jun, Ji, Yang, Zheng, HouZhi, Wang, Kaiyou. Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(9): 1554-1557, http://dx.doi.org/10.1109/LED.2019.2932479.
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[45] Wu Zhenhua, Yao Jiaxin, Xiang Jinjuan, Yin Huaxiang, Zhang Qingzhu, Hou Chaozhao, Wang Guilei. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-Dielectrics and SiGe Epitaxial Substrates. CHINESE PHYSICS LETTERS[J]. 2017, 34(9): 097304-1, http://lib.cqvip.com/Qikan/Article/Detail?id=673439333.
[46] 侯朝昭, 王桂磊, 项金娟, 姚佳欣, 吴振华, 张青竹, 殷华湘. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates. 中国物理快报(英文版). 2017, 34(9): 95-99, http://lib.cqvip.com/Qikan/Article/Detail?id=673439333.
[47] Zhang Qingzhu, Yin Huaxiang, Luo Jun, Yang Hong, Meng Lingkuan, Li Yudong, Wu Zhenhua, Zhang Yanbo, Zhang Yongkui, Qin Zhangliang, Li Junjie, Gao Jianfeng, Wang Guilei, Xiong Wenjuan, Xiang Jinjuan, Zhou Zhangyu, Mao Shujuan, Xu Gaobo, Liu Jinbiao, Yang Tao. FOI FinFET with Ultra-low Parasitic Resistance Enabled by Fully Metallic Source and Drain Formation on Isolated Bulk-Fin. 2016, 452-455, http://159.226.55.106/handle/172511/16336.
[48] Wu, Zhenhua, Zhai, F, Peeters, F M, Xu, H Q, Chang, Kai. Valley-Dependent Brewster Angles and Goos-Hanchen Effect in Strained Graphene. PHYSICAL REVIEW LETTERS[J]. 2011, 106(17): http://ir.semi.ac.cn/handle/172111/20849.
[49] Wu, Zhenhua, Peeters, F M, Chang, Kai. Spin and momentum filtering of electrons on the surface of a topological insulator. APPLIED PHYSICS LETTERS[J]. 2011, 98(16): http://ir.semi.ac.cn/handle/172111/20863.
[50] Wu, Zhenhua. Electronic fiber in graphene. APPLIED PHYSICS LETTERS[J]. 2011, 98(8): http://ir.semi.ac.cn/handle/172111/20913.
[51] 吴振华. 石墨烯及拓扑绝缘体中电子的类光输运行为. 2011, http://ir.semi.ac.cn/handle/172111/20708.
[52] Wu, Zhenhua, Peeters, F M, Chang, Kai. Electron tunneling through double magnetic barriers on the surface of a topological insulator. PHYSICAL REVIEW B[J]. 2010, 82(11): http://ir.semi.ac.cn/handle/172111/13901.
[53] Wu, Zhenhua, Zhang, Z Z, Chang, Kai, Peeters, F M. Quantum tunneling through graphene nanorings. NANOTECHNOLOGY[J]. 2010, 21(18): http://ir.semi.ac.cn/handle/172111/11221.
[54] Wu, Zhenhua, Chang, Kai, Liu, J T, Li, X J, Chan, K S. The Hartman effect in graphene. JOURNAL OF APPLIED PHYSICS[J]. 2009, 105(4): http://ir.semi.ac.cn/handle/172111/7337.
发表著作
(1) <科学>杂志精选论文, 科学出版社, 2008-05, 第 5 作者

科研活动

   
科研项目
( 1 ) 高迁移率二维料铟硒及其异质结构的物性、量子输运性质调控和器件应用研究, 主持, 国家级, 2018-01--2021-12
( 2 ) 半导体二维原子晶体材料的制备与器件特性, 参与, 国家级, 2016-07--2021-06
( 3 ) 亚10纳米工艺节点CMOS架构材料可行性方案的探索研究, 主持, 市地级, 2016-06--2018-12
( 4 ) 新型二维材料纳米微结构中电荷输运的介观调控, 主持, 市地级, 2016-06--2017-07
( 5 ) 亚10纳米工艺节点CMOS path finding PDK 先导研究, 主持, 部委级, 2016-06--2018-12
( 6 ) 10纳米 FinFET path finding 研究, 主持, 国家级, 2016-06--2020-12
( 7 ) 亚5纳米工艺节点超低功耗高性能半导体器件探索研究, 主持, 部委级, 2019-09--2021-08
( 8 ) 超陡亚阈值摆幅低功耗新原理器件, 主持, 省级, 2018-08--2019-08
( 9 ) 超薄ZrO2栅介质NC-FinFET及其可靠性研究, 参与, 国家级, 2020-01--2023-12
( 10 ) 先进工艺节点器件与单元电路协同优化研究, 主持, 部委级, 2018-12--2021-06
( 11 ) 集成电路核心器件先进仿真方法和TCAD工具研究, 主持, 部委级, 2021-01--2023-12

指导学生

现指导学生

刘建华  博士研究生  080903-微电子学与固体电子学  

甘维卓  博士研究生  080903-微电子学与固体电子学  

李仕信  硕士研究生  080903-微电子学与固体电子学  

徐浩清  硕士研究生  080903-微电子学与固体电子学  

霍嘉丽  博士研究生  080903-微电子学与固体电子学  

徐丽君  博士研究生  080903-微电子学与固体电子学  

占国慧  博士研究生  080903-微电子学与固体电子学  

狄兆海  硕士研究生  085400-电子信息  

时玉坤  硕士研究生  085400-电子信息