（1）半导体金刚石材料与器件

（2）宽禁带半导体材料、物理和器件

（3）低维结构半导体材料与量子器件

   

0805Z2-半导体材料与器件

半导体金刚石材料与器件
宽禁带半导体材料、器件和物理
半导体低维结构材料和量子器件

1996-09--2001-06 南开大学 理学博士学位
1992-09--1996-07 南开大学 理学学士学位

   

2009-01--今 中国科学院半导体研究所 研究员
2003-09--2008-12 中国科学院半导体研究所 副研究员
2001-07--2003-09 中国科学院半导体研究所 博士后

2024-01-01-2026-12-31,Functional Diamond 期刊, 编委
2021-07-09-2026-07-08,中关村天合宽禁带半导体技术创新联盟, 副理事长
2018-07-01-今,济南市槐荫区半导体产业发展特邀顾问, 特邀顾问
2017-05-01-2020-12-31,中国科学技术出版社科技/科普专家,
2015-09-01-今,中国有色金属学会宽禁带半导体专业委员会, 委员
2012-01-01-今,中国电子学会半导体与集成技术分会, 高级会员

半导体材料
半导体材料测试与分析
半导体光学

   

（ 1 ） 一种氧化镓/金刚石雪崩光电二极管及其制备方法, 发明专利, 2022, 第 2 作者, 专利号: CN202211306418.6

（ 2 ） 提高薄膜厚度均匀性的制备方法, 发明专利, 2022, 第 2 作者, 专利号: CN202210420002.0

（ 3 ） 提高薄膜厚度均匀性的制备方法, 发明专利, 2022, 第 2 作者, 专利号: CN114775043A

（ 4 ） 垂直结构的金刚石深耗尽型场效应晶体管及制备方法, 发明专利, 2021, 第 3 作者, 专利号: CN113594230A

（ 5 ） 一种应用于小尺寸样品光刻工艺的方法, 发明专利, 2021, 第 3 作者, 专利号: CN113031392A

（ 6 ） 用于等离子体化学气相的样品支架, 发明专利, 2021, 第 2 作者, 专利号: CN112899659A

（ 7 ） 一种高均一性半导体膜的生长装置及制备方法, 2023, 第 2 作者, 专利号: CN111826634B

（ 8 ） 一种高均一性半导体膜的生长装置及制备方法, 发明专利, 2020, 第 2 作者, 专利号: CN111826634A

（ 9 ） 隔热导电偏压衬底托, 专利授权, 2021, 第 4 作者, 专利号: CN111647878B

（ 10 ） 材料生长速率测量方法, 发明专利, 2020, 第 1 作者, 专利号: CN111653324A

（ 11 ） 衬底托, 外观设计, 2021, 第 1 作者, 专利号: CN212357378U

（ 12 ） 热蒸发源炉, 外观设计, 2020, 第 1 作者, 专利号: CN212223085U

（ 13 ） 衬底托, 发明专利, 2020, 第 1 作者, 专利号: CN111471976A

（ 14 ） 用于异质外延的石墨烯中间层柔性衬底及其制备方法, 发明专利, 2020, 第 2 作者, 专利号: CN111341836A

（ 15 ） 一种缓冲层结构及其制备方法, 发明专利, 2020, 第 2 作者, 专利号: CN111048404A

（ 16 ） 一种用于微波等离子体化学气相沉积装置的样品台结构, 发明专利, 2020, 第 2 作者, 专利号: CN110983298A

（ 17 ） 基于等离子工艺的同步生成并图形化石墨烯的方法, 发明专利, 2020, 第 2 作者, 专利号: CN110993492A

（ 18 ） 基于微波等离子体化学气相沉积的石墨烯制备方法, 专利授权, 2019, 第 2 作者, 专利号: CN109852944A

（ 19 ） 一种高速高质量单晶金刚石的生长方法, 发明专利, 2018, 第 4 作者, 专利号: CN108611680A

（ 20 ） 一种高速高质量单晶金刚石的生长方法, 2020, 第 4 作者, 专利号: CN108611680B

（ 21 ） 半导体测试装置及方法, 专利授权, 2018, 第 3 作者, 专利号: CN107589360A

（ 22 ） 异质外延金刚石及其制备方法, 发明专利, 2017, 第 2 作者, 专利号: CN106835274A

（ 23 ） 用于微波等离子体化学气相沉积设备的组合式衬底基座, 专利授权, 2017, 第 2 作者, 专利号: CN107304475A

（ 24 ） 用于AlGaN光电器件的多量子阱结构及制备方法, 发明专利, 2016, 第 2 作者, 专利号: CN105845796A

（ 25 ） 曲率渐变的弯曲波导量子点超辐射发光管及其制备方法, 发明专利, 2015, 第 4 作者, 专利号: CN104485403A

（ 26 ） 掩模板、套刻对准方法及制备脊形波导激光器的方法, 发明专利, 2015, 第 4 作者, 专利号: CN104460223A

（ 27 ） 输出功率和光谱形状独立可调的发光二极管的制作方法, 发明专利, 2014, 第 2 作者, 专利号: CN103824920A

（ 28 ） 一种高Al组分AlGaN薄膜的制备方法, 发明专利, 2014, 第 4 作者, 专利号: CN103806104A

（ 29 ） 提高AlN外延薄膜荧光强度的方法, 发明专利, 2014, 第 4 作者, 专利号: CN103578977A

（ 30 ） 高In组分AlInN薄膜的制备方法, 发明专利, 2013, 第 4 作者, 专利号: CN103346068A

（ 31 ） 复合构型可调谐光栅外腔双模激光器, 发明专利, 2013, 第 1 作者, 专利号: CN103326239A

（ 32 ） 一种锁模外腔半导体激光器, 发明专利, 2013, 第 2 作者, 专利号: CN103227417A

（ 33 ） 滤波式波长可调谐外腔激光器, 发明专利, 2013, 第 2 作者, 专利号: CN103117506A

（ 34 ） 掺杂半导体材料生长设备及方法, 发明专利, 2012, 第 1 作者, 专利号: CN102732957A

（ 35 ） 用于多电流注入区器件的倒装焊结构及其制作方法, 发明专利, 2012, 第 2 作者, 专利号: CN102427108A

（ 36 ） 条纹相机反射式离轴光学耦合装置, 发明专利, 2011, 第 1 作者, 专利号: CN102252754A

（ 37 ） 深紫外激光光致发光光谱仪, 发明专利, 2011, 第 1 作者, 专利号: CN102213617A

（ 38 ） 砷化镓基短波长量子点超辐射发光二极管, 发明专利, 2011, 第 3 作者, 专利号: CN102136534A

（ 39 ） 制备多区域结构超辐射发光管电学隔离的方法, 发明专利, 2010, 第 2 作者, 专利号: CN101740455A

（ 40 ） 光伏型InAs量子点红外探测器结构, 发明专利, 2010, 第 4 作者, 专利号: CN101740655A

（ 41 ） 光栅耦合表面发射的超辐射发光二极管结构, 发明专利, 2011, 第 2 作者, 专利号: CN102054909A

（ 42 ） 一种提高光栅外腔激光器光学质量的方法, 发明专利, 2011, 第 2 作者, 专利号: CN102055128A

（ 43 ） 控制自组织铟镓砷量子点成核的生长方法, 发明专利, 2009, 第 3 作者, 专利号: CN101540357A

（ 44 ） 量子点光调制器有源区结构, 发明专利, 2009, 第 2 作者, 专利号: CN101414063A

（ 45 ） 提高自组织量子点光学性质温度稳定性的材料结构, 发明专利, 2008, 第 2 作者, 专利号: CN101308888A

（ 46 ） 在半导体衬底上制备有序砷化铟量子点的方法, 发明专利, 2008, 第 3 作者, 专利号: CN101241850A

（ 47 ） 在半导体衬底上制备量子环结构的方法, 发明专利, 2008, 第 3 作者, 专利号: CN101241849A

（ 48 ） 砷化铟和砷化镓的纳米结构及其制作方法, 发明专利, 2009, 第 4 作者, 专利号: CN100468802C

（ 49 ） 一种量子点材料结构及其生长方法, 发明专利, 2008, 第 4 作者, 专利号: CN101145590A

（ 50 ） 长波长砷化铟/砷化镓量子点材料, 发明专利, 2010, 第 2 作者, 专利号: CN101113328B

（ 51 ） 宽光谱砷化铟/砷化铝镓量子点材料生长方法, 发明专利, 2009, 第 2 作者, 专利号: CN100459045C

（ 52 ） 半导体量子点/量子阱导带内跃迁材料结构, 发明专利, 2007, 第 1 作者, 专利号: CN101038946A

（ 53 ） 宽光谱砷化铟/砷化铟镓/砷化镓量子点材料生长方法, 发明专利, 2007, 第 2 作者, 专利号: CN101007944A

（ 54 ） 1.02-1.08微米波段InGaAs/GaAs量子点外延结构及其制造方法, 发明专利, 2010, 第 4 作者, 专利号: CN101505034B

（ 55 ） 一种亚分子单层量子点激光器材料的外延生长方法, 发明专利, 2007, 第 4 作者, 专利号: CN1925174A

（ 56 ） 1.02－1.08微米波段InGaAs/GaAs量子点外延结构及其制造方法, 发明专利, 2009, 第 4 作者, 专利号: CN101505034A

（ 57 ） 一种大功率半导体量子点激光器材料的外延生长方法, 发明专利, 2007, 第 4 作者, 专利号: CN1925175A

（ 58 ） 以原位垂直超晶格为模板定位生长量子线或点的方法, 发明专利, 2007, 第 3 作者, 专利号: CN1892986A

（ 59 ） 在解理面上制作半导体纳米结构的方法, 发明专利, 2006, 第 5 作者, 专利号: CN1725436A

（ 60 ） 一种自组织量子点为有源区的超辐射发光管, 发明专利, 2004, 第 4 作者, 专利号: CN1490887

   

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[3] 冯梦阳, 金鹏. One-step growth of a nearly 2 mm thick CVD single crystal diamond with an enlarged surface by optimizing the substrate holder structure. Journal of Crystal Growth[J]. 2023, 第 11 作者603: 127071, 
[4] Qu, Pengfei, Jin, Peng, Zhou, Guangdi, Wang, Zhen, Wu, Ju, Wang, Zhanguo. Epitaxial growth of high-quality yttria-stabilized zirconia films with uniform thickness on silicon by the combination of PLD and RF sputtering. SURFACE & COATINGS TECHNOLOGY[J]. 2023, 第 11 作者456: 129267, http://dx.doi.org/10.1016/j.surfcoat.2023.129267.
[5] 许敦洲, 金鹏, 徐鹏飞, 冯梦阳, 吴巨, 王占国. Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation. Chin. Phys. B[J]. 2023, 第 11 作者
[6] 屈鹏霏, 金鹏, 周广迪, 王镇, 许敦洲. ���������������������������������������������������������. 人工晶体学报[J]. 2023, 第 11 作者52(05期): 857-877, 
[7] Zhou, Guangdi, Qu, Pengfei, Huo, Xiaodi, Jin, Peng, Wu, Ju, Wang, Zhanguo. The deposition of Ir/YSZ double-layer thin films on silicon by PLD and magnetron sputtering: Growth kinetics and the effects of oxygen. RESULTS IN PHYSICS[J]. 2023, 第 11 作者47: http://dx.doi.org/10.1016/j.rinp.2023.106357.
[8] 冯梦阳, 金鹏. One-step growth of a nearly 2 mm thick CVD single crystal diamond with an enlarged surface by optimizing the substrate holder structure. Journal of Crystal Growth[J]. 2023, 第 2 作者  通讯作者  603: 127071, 
[9] Qu, Pengfei, Jin, Peng, Zhou, Guangdi, Wang, Zhen, Wu, Ju, Wang, Zhanguo. Epitaxial growth of high-quality yttria-stabilized zirconia films with uniform thickness on silicon by the combination of PLD and RF sputtering. SURFACE & COATINGS TECHNOLOGY[J]. 2023, 第 2 作者  通讯作者  456: 129267, http://dx.doi.org/10.1016/j.surfcoat.2023.129267.
[10] 许敦洲, 金鹏, 徐鹏飞, 冯梦阳, 吴巨, 王占国. Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation. Chin. Phys. B[J]. 2023, 第 2 作者  通讯作者  
[11] 屈鹏霏, 金鹏, 周广迪, 王镇, 许敦洲. 单晶金刚石异质外延用铱复合衬底研究现状. 人工晶体学报[J]. 2023, 第 2 作者  通讯作者  52(05期): 857-877, 
[12] Zhang, Shixiong, Tang, Ning, Sun, Zhenhao, Li, Guoping, Fan, Teng, Fu, Lei, Zhang, Yunfan, Jiang, Jiayang, Jin, Peng, Ge, Weikun, Shen, Bo. Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well. APPLIED PHYSICS LETTERS[J]. 2023, 第 9 作者123(13): http://dx.doi.org/10.1063/5.0161465.
[13] Zhou, Guangdi, Qu, Pengfei, Huo, Xiaodi, Jin, Peng, Wu, Ju, Wang, Zhanguo. The deposition of Ir/YSZ double-layer thin films on silicon by PLD and magnetron sputtering: Growth kinetics and the effects of oxygen. RESULTS IN PHYSICS[J]. 2023, 第 4 作者  通讯作者  47: http://dx.doi.org/10.1016/j.rinp.2023.106357.
[14] Wang, Yixin, Yuan, Ye, Tao, Renchun, Liu, Shangfeng, Wang, Tao, Sheng, Shanshan, Quach, Patrick, Cm, Manoj Kumar, Chen, Zhaoying, Liu, Fang, Rong, Xin, Jin, Peng, Feng, Mengyang, Li, Hongwei, Guo, Shiping, Ge, Weikun, Lee, June Key, Shen, Bo, Wang, Xinqiang. High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells. ADVANCED OPTICAL MATERIALS[J]. 2022, 第 12 作者10(18): http://dx.doi.org/10.1002/adom.202200011.
[15] Feng, Mengyang, Jin, Peng, Meng, Xianquan, Xu, Pengfei, Huo, Xiaodi, Zhou, Guangdi, Qu, Pengfei, Wu, Ju, Wang, Zhanguo. Performance of metal-semiconductor-metal structured diamond deep-ultraviolet photodetector with a large active area. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2022, 第 11 作者55(40): 
[16] Pengfei Xu, 金鹏, Mengyang Feng, Pengfei Qu, Xiaodi Huo, Ju Wu, Zhanguo Wang. TCAD simulation of vertical diamond MISFET based on deep depletion characteristics with high current output capacity. MICRO AND NANOSTRUCTURES[J]. 2022, 第 2 作者169: http://dx.doi.org/10.1016/j.micrna.2022.207368.
[17] Wang, Yixin, Yuan, Ye, Tao, Renchun, Liu, Shangfeng, Wang, Tao, Sheng, Shanshan, Quach, Patrick, Cm, Manoj Kumar, Chen, Zhaoying, Liu, Fang, Rong, Xin, Jin, Peng, Feng, Mengyang, Li, Hongwei, Guo, Shiping, Ge, Weikun, Lee, June Key, Shen, Bo, Wang, Xinqiang. High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells. ADVANCED OPTICAL MATERIALS[J]. 2022, 第 12 作者10(18): http://dx.doi.org/10.1002/adom.202200011.
[18] Feng, Mengyang, Jin, Peng, Meng, Xianquan, Xu, Pengfei, Huo, Xiaodi, Zhou, Guangdi, Qu, Pengfei, Wu, Ju, Wang, Zhanguo. Performance of metal-semiconductor-metal structured diamond deep-ultraviolet photodetector with a large active area. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2022, 第 2 作者  通讯作者  55(40): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000835959700001.
[19] Pengfei Xu, 金鹏, Mengyang Feng, Pengfei Qu, Xiaodi Huo, Ju Wu, Zhanguo Wang. TCAD simulation of vertical diamond MISFET based on deep depletion characteristics with high current output capacity. MICRO AND NANOSTRUCTURES[J]. 2022, 第 2 作者169: http://dx.doi.org/10.1016/j.micrna.2022.207368.
[20] Huo, Xiaodi, Zhou, Guangdi, Feng, Mengyang, Jin, Peng, Wu, Ju, Wang, Zhanguo. Effects of deposition time on growth of Ir buffer layer on MgO(100) support layer by magnetron sputtering. RESULTS IN PHYSICS[J]. 2021, 第 11 作者30: http://dx.doi.org/10.1016/j.rinp.2021.104878.
[21] Huo, Xiaodi, Zhou, Guangdi, Feng, Mengyang, Jin, Peng, Wu, Ju, Wang, Zhanguo. Effects of deposition time on growth of Ir buffer layer on MgO(100) support layer by magnetron sputtering. RESULTS IN PHYSICS[J]. 2021, 第 4 作者  通讯作者  30: https://doaj.org/article/0e3753e8c5f04471b51cc443951c63c9.
[22] Chen, Yanan, Jin, Peng, Zhou, Guangdi, Feng, Mengyang, Fu, Fangbin, Wu, Ju, Wu, Zhangu. Investigation of excitonic recombination in single-crystal diamond with cathodoluminescence spectroscopy. JOURNAL OF LUMINESCENCE[J]. 2020, 第 11 作者226: http://dx.doi.org/10.1016/j.jlumin.2020.117428.
[23] Jin Peng. Research on the photoluminescence of spectral broadening by rapied thermal annealing on InAs/GaAs quantum dots. Journal of Semiconductors. 2020, 第 11 作者
[24] Wang, Ye, Meng, Junhua, Tian, Yan, Chen, Yanan, Wang, Gaokai, Yin, Zhigang, Jin, Peng, You, Jingbi, Wu, Jinliang, Zhang, Xingwang. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES[J]. 2020, 第 7 作者12(24): 27361-27367, http://dx.doi.org/10.1021/acsami.0c05850.
[25] Dandan Ning, Yanan Chen, Xinkun Li, Dechun Liang, Shufang Ma, Peng Jin, Zhanguo Wang. Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots. 半导体学报:英文版[J]. 2020, 第 11 作者41(12): 1-6, http://lib.cqvip.com/Qikan/Article/Detail?id=7103473584.
[26] Zhou, Guangdi, Jin, Peng, Wang, Yuan, Pei, Guangling, Wu, Ju, Wang, Zhanguo. X-ray diffraction analysis of the yttria stabilized zirconia powder by mechanical alloying and sintering. CERAMICS INTERNATIONAL[J]. 2020, 第 11 作者46(7): 9691-9697, http://dx.doi.org/10.1016/j.ceramint.2019.12.236.
[27] Chen, Yanan, Jin, Peng, Zhou, Guangdi, Feng, Mengyang, Fu, Fangbin, Wu, Ju, Wu, Zhangu. Investigation of excitonic recombination in single-crystal diamond with cathodoluminescence spectroscopy. JOURNAL OF LUMINESCENCE[J]. 2020, 第 2 作者  通讯作者  226: http://dx.doi.org/10.1016/j.jlumin.2020.117428.
[28] Jin Peng. Research on the photoluminescence of spectral broadening by rapied thermal annealing on InAs/GaAs quantum dots. Journal of Semiconductors. 2020, 第 1 作者  通讯作者  
[29] Wang, Ye, Meng, Junhua, Tian, Yan, Chen, Yanan, Wang, Gaokai, Yin, Zhigang, Jin, Peng, You, Jingbi, Wu, Jinliang, Zhang, Xingwang. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES[J]. 2020, 第 7 作者12(24): 27361-27367, http://dx.doi.org/10.1021/acsami.0c05850.
[30] Dandan Ning, Yanan Chen, Xinkun Li, Dechun Liang, Shufang Ma, Peng Jin, Zhanguo Wang. Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots. 半导体学报:英文版[J]. 2020, 第 6 作者  通讯作者  41(12): 1-6, http://lib.cqvip.com/Qikan/Article/Detail?id=7103473584.
[31] Zhou, Guangdi, Jin, Peng, Wang, Yuan, Pei, Guangling, Wu, Ju, Wang, Zhanguo. X-ray diffraction analysis of the yttria stabilized zirconia powder by mechanical alloying and sintering. CERAMICS INTERNATIONAL[J]. 2020, 第 2 作者  通讯作者  46(7): 9691-9697, http://dx.doi.org/10.1016/j.ceramint.2019.12.236.
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