·           Novel oxide semiconductor thin films, and their electronic and optoelectronic devices (such as thin-film transistors and p-n junctions)

·           High-k oxide dielectric thin films and their flexible circuit applications

·           Energy-related materials and devices: Zinc tin nitride and its oxide

 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing, P. R. China

M.S./Ph.D degree in Material Physics & Chemistry: June 2008

Dissertation Title: “Investigation on the preparation, characterization and properties of self-organized InAs/GaAs quantum dots arrays and lasers for long wavelength emitting”

Advisor: Prof. Z. G. Wang (Academician)

Nanjing University, Nanjing, P. R. China

      Bachelor degree in Physics: June 2003

1. Associate Professor, Ningbo Institute of Materials Technology &. Engineering, Chinese Academy of Science, 2012.01-current

2. Senior Research assistant, Ningbo Institute of Materials Technology &. Engineering, Chinese Academy of Science, 2010.11-2011.12

3. Postdoctoral researcher in the group of Hongtao Cao, Department of Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology &. Engineering, Chinese Academy of Science, Research Topic “P-type SnO thin films and their transistors,” 2008.08-2010.10

·           1. L. Y. Liang, S. N. Zhang, W. H. Wu, L. Q. Zhu, H. Xiao, Y. H. Liu, H. L. Zhang, K. Javaid, H. T. Cao, Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage, Applied Physics Letters, 109, 173501, 2016.

·           2. R. F. Qin, H. T. Cao, L. Y. Liang, Y. F. Xie, F. Zhuge, H. L. Zhang, J. H. Gao, K. Javaid, C. C. Liu, W. Z. Sun, Semiconducting ZnSnN₂ thin films for Si/ZnSnN₂ p-n junctions. Applied Physics Letters, 108, 041615, 2016.  (Corresponding author)

·           3. M. Wang, L. Y. Liang, H. Luo, S. N. Zhang, H. L. Zhang, K. Javaid, H. T. Cao. Threshold Voltage Tuning in a-IGZO TFTs With Ultrathin SnOx Capping Layer and Application to Depletion-Load Inverter [J]. IEEE Electron Device Letters, 37(4): 422-425, 2016.  (Corresponding author)

·           4. H. Luo, L. Y. Liang, H. T. Cao, M. Z. Dai, Y. C. Lu, and M. Wang, Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters. ACS Appl. Mater. Interfaces, 7, 17023−1703, 2015 (Corresponding author)

·           5. Q. Liu, L. Y. Liang, H. T. Cao, H. Luo, H. L. Zhang, J. Li, X. X. Li and F. L. Deng, Tunable crystallographic grain orientation and Raman fingerprints of polycrystalline SnO thin films. Journal of Materials Chemical C, 3, 1077–1081, 2015 (Corresponding author)

·           6. F. L. Deng, H. T. Cao, L. Y. Liang, J. Li, J. H. Gao, H. L. Zhang, R. F. Qin, and C. C. Liu, Determination of the basic optical parameters of ZnSnN₂, Optics Letters 40,1282-1285, 2015 (Corresponding author)

·           7. X. X. Li, L. Y. Liang, H. T. Cao, R. F. Qin, H. L. Zhang, J. H. Gao, and F. Zhuge, Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions. Applied Physics Letters, 106, 132102, 2015 (Corresponding author)

·           8.W. Y. Xu, H. T. Cao, L. Y. Liang, and J.-B. Xu, Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics ACS Appl. Mater. Interfaces,7, 14720-14725, 2015

·           9. L. Y. Liang, H. T. Cao, Q. Liu, K. M. Jiang, Z. M. Liu, F. Zhuge, and F. L. Deng, Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses, ACS Appl. Mater. Interfaces, 6, 2255-2261, 2014

·           10. H. Luo, L. Y. Liang, Q. Liu, and H. T. Cao, Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT Applications, ECS Journal of Solid State Science and Technology, 3, Q3091-Q3094 , 2014 (Corresponding author)

·           11. K. Cang, L. Y. Liang, Z. M. Liu, L. Wu, H. Luo, H. T. Cao and Y. S. Zou, Influence of the substrate bias voltage on the physical properties of dc reactive sputtered Ta₂O₅ films, J. Alloys Compnd., 550, 258, 2013

·           12. L. Wu, J. H. Gao, Z. M. Liu, L. Y. Liang, F. Xia, and H. T. Cao, Thermal aging characteristics of CrNxOy solar selective absorber coating for flat plate solar thermal collector applications, Sol. Energ. Mat. Sol. C., 114, 186, 2013

·           13. L. Y. Liang, H. T. Cao, X. B. Chen, Z. M. Liu, F. Zhuge, H. Luo, J. Li, Y. C. Lu and W. Lu, “Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities”, Appl. Phys. Lett., 100, 263502, 2012.

·           14. L. Y. Liang, Z. M. Liu, H. T. Cao, W. Y. Xu, X. L. Sun, H. Luo and K. Cang, “The structural, optical and electrical properties of Y-doped SnO thin films and their p-type TFT application”. J. Phys. D: Appl. Phys., 45, 085101, 2012.

·           15. L. Y. Liang, H. T. Cao, “Ambipolar SnO thin-film transistors and inverters”，ECS Tran., 50, 289, 2012.

·           16. H. Luo, L. Y. Liang, H. T. Cao, Z. M. Liu and F. Zhuge, “Structural, Chemical, Optical, and Electrical Evolution of SnOx Films Deposited by Reactive rf Magnetron Sputtering”, ACS Appl. Mater. Interfaces, 4, 5673, 2012.

·           17. Z. M. Liu, L. Y. Liang, Z. Yu, S. K. He, X. J. Ye, X. L. Sun, A. H. Sun, and H. T. Cao, “ Structural and Electrical Characteristics of RF Sputtered YON Gate Dielectrics and Their Thin Film Transistor Applications”, J. Phys. D: Appl. Phys., 44,155403, 2011. (Corresponding author)

·           18. A. H. Chen, L. Y. Liang, H. Z. Zhang, Z. M. Liu, X. J. Ye, Y. Zheng, and H. T. Cao, “Enhancement of a-IZO TTFT Performance by Using Y₂O₃/Al₂O₃ Bilayer Dielectrics”, Electrochem. Solid-state Lett., 14, H88, 2011.

·           19. L. Y. Liang, Z. M. Liu, H. T. Cao, Y. Y. Shi, X. L. Sun, Z. Yu, A. H. Chen, H. Z. Zhang, and Y. Q. Fang, “Improvement of Phase Stability and Accurate Determination of Optical Constants of SnO Thin Films by using Al₂O₃ Capping layer”, ACS Appl. Mater. Interfaces, 2, 1565,2010.

·           20. L. Y. Liang, Z. M. Liu, H. T. Cao, Z. Yu, Y. Y. Shi, A. H. Chen, H. Z. Zhang, Y. Q. Fang, and X. L. Sun, “Phase and optical characterization of annealed SnO thin films and their p-type TFT application”, J. Electrochem. Soc., 157, H598, 2010.

·           21. L. Y. Liang, Z. M. Liu, H. T. Cao, and X. Q. Pan, “Microstructure, optical, and electrical properties of SnO thin films prepared on quartz via a two-step method”, ACS Appl. Mater. Interfaces, 2, 1060, 2010.

·           22. H. Z. Zhang, L. Y. Liang, A. H. Chen, Z. M. Liu, Y. Zheng, H. T. Cao, and Q. Wan, 2010, “High-performance transparent thin-film transistor based on Y₂O₃/In₂O₃ with low interface traps”, Appl. Phys. Lett., 97, 122108, 2010.

·           Hongtao Cao, Lingyan Liang, Zhimin Liu, Patent Authorized Number ZL200910152532.6, One two-step approach to fabricate SnO thin film.

·           Hongtao Cao, Lingyan Liang, Zhimin Liu, Patent Authorized Number ZL201010040097.0, One method for preparation thin film transistor with p-type SnO channel.

·           Zheng Yu, Hongtao Cao, Lingyan Liang, Patent Application Number N201110056308.4 One method for preparation of high k YAlO3 compound thin film used for thin film transistor

·           Hongtao Cao, Lingyan Liang, Zhimin Liu, Patent Application Number CN201210040980.9, One method for preparation of ambipolar inverters based on SnO.

·           Lingyan Liang, Hongtao Cao, Hao Luo, et al. Patent Application Number CN201410376451.5, Ambipolar thin-film transistors and their preparation method.

·           Lingyan Liang, Hongtao Cao, Fuling Deng, et al. Patent Application Number CN201410379727.5, One method for preparation of polycrystalline Zinc Tin nitride films. 

·           Lingyan Liang, Xiuxia Li Hongtao Cao, et al. Patent Application Number CN201410852975.7, p-n junctions and their preparation method.

·           Lingyan Liang, Shengnan Zhang, Hongtao Cao, et al. Patent Application Number CN201510358829.3, Thin-film transistor biosensors and their preparation method.

·           Lingyan Liang, Ruifeng Qing, Hongtao Cao, et al. Patent Application Number CN201510428808.4, p-n junctions based on Zinc Tin Nitride films and their preparation method.

²  Wearable thin-film-transistor-based sensors for various signal (temperature, UV/visible light, biochemistry, strain, etc) detection.

²  Oxide-based logic circuits on flexible substrates.

²  Synthesis and Characterization of various semiconductor and dielectric thin films and their use in different device applications.

²  Multifunctional device integration on panel.

²  Physics and chemistry of materials and devices: bulk, surface and interface.

已指导学生

张胜男  硕士研究生  085204-材料工程  

吴振东  硕士研究生  080501-材料物理与化学  

肖溪  硕士研究生  085204-材料工程