基本信息
刘志强  男  博导  中国科学院半导体研究所
电子邮件: lzq@semi.ac.cn
通信地址: 清华东路甲35号半导体所
邮政编码:

研究领域

第三代半导体材料与器件,氮化物发光材料与器件,新型纳米器件,氮化物自旋晶体管器件

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
第三代半导体材料与器件,氮化物发光材料与器件,新型纳米器件,氮化物自旋晶体管器件

教育背景

2004-07--2007-07   中科院半导体所   博士
1997-07--2004-07   吉林大学   硕士

工作经历

   
工作简历
2018-03~2018-06,挪威科技大学, 访问学者
2015-01~现在, 中国科学院半导体研究所, 研究员
2012-01~2014-07,中科院半导体所, 副研究员
2010-12~2012-01,美国北卡大学, 访问学者
2009-08~2011-07,南京大学, 博士后
2007-07~2010-11,中科院半导体所, 助理研究员

教授课程

材料性能
专题实践

专利与奖励

   
奖励信息
(1) 高效长寿命半导体照明技术及产业化, 一等奖, 国家级, 2019
(2) 低热阻高光效蓝宝石基GaN LED, 二等奖, 国家级, 2014
(3) 高效大功率GaNLED, 一等奖, 省级, 2012
专利成果
[1] 伊晓燕, 王蕴玉, 刘志强, 梁萌, 王兵, 任芳, 尹越, 王军喜, 李晋闽. 一种基于非晶衬底的氮化物薄膜结构及其制备方法. CN: [[[CN111697115A]]], [[["2020-09-22"]]].

[2] 伊晓燕, 张硕, 刘志强, 梁萌, 冯涛, 任芳, 王蕴玉, 王军喜, 李晋闽. LED/ZnO纳米线阵列集成的光电晶体管芯片及制备方法. CN: CN111816729A, 2020-10-23.

[3] 刘志强, 程成, 伊晓燕, 张勇, 王军喜, 李晋闽. ZnO/GaN异质结纳米线光开关及其制备方法. CN: CN109524490A, 2019-03-26.

[4] 綦成林, 伊晓燕, 刘志强, 王莉, 詹腾, 马俊, 王钦金. 柔性发光器件及其制备方法、发光装置. 中国: CN105870114B, 2018-11-02.

[5] 刘志强, 伍绍腾, 伊晓燕, 黄洋, 程成, 王蕴玉, 綦成林. 在衬底上制备GaN纳米线的方法. 中国: CN107910243A, 2018-04-13.

[6] 伊晓燕, 伍绍腾, 刘志强, 黄洋, 程成, 王蕴玉, 綦成林. 在衬底上生长GaN平面纳米线的方法. 中国: CN107881554A, 2018-04-06.

[7] 詹腾, 伊晓燕, 刘志强, 王军喜, 李晋闽. 光刺激及信号采集探针. 中国: CN106913315A, 2017.07.04.

[8] 袁国栋, 张璐, 王琦, 王克超, 刘志强, 王军喜, 李晋闽. 非平面硅衬底LED器件及其制作方法. 中国: CN106558637A, 2017.04.05.

[9] 王兵, 王蕴玉, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 一种催化CVD法自生长石墨烯透明导电薄膜的方法. 中国: CN107215858A, 2017-09-29.

[10] 郭恩卿, 伊晓燕, 刘志强, 王良臣, 王军喜, 李晋闽. 一种微LED器件阵列单元的制作方法. 中国: CN107146835A, 2017-09-08.

[11] 伊晓燕, 刘志强, 何志, 段瑞飞, 黄洋, 王军喜, 李晋闽. 无衬底GaN基LED单颗晶粒及其制备方法. 中国: CN106992232A, 2017-07-28.

[12] 刘志强, 黄洋, 伊晓燕, 王军喜, 李晋闽. 在MOCVD中测量半导体薄膜杂质电离能的无损测量方法. 中国: CN106940303A, 2017-07-11.

[13] 伊晓燕, 詹腾, 刘志强, 王军喜, 李晋闽. 完全植入式光学医疗器械. 中国: CN106821328A, 2017-06-13.

[14] 黄洋, 伊晓燕, 刘志强, 王军喜, 李晋闽. 采用变温PL谱获取半导体材料杂质电离能的无损测量方法. 中国: CN106841146A, 2017-06-13.

[15] 王钦金, 詹腾, 马骏, 郭恩卿, 刘志强, 伊晓燕, 王军喜, 李晋闽. 化学镀银制作氮化镓基发光二极管反射镜金属层的方法. 中国: CN105226160A, 2016-01-06.

[16] 赵博, 李晋闽, 伊晓燕, 郭金霞, 马骏, 刘志强. 单芯片多电极调控多波长发光二极管结构及制备方法. 中国: CN104617122A, 2015.05.13.

[17] 郭金霞, 田婷, 刘志强, 伊晓燕, 王军喜, 李晋闽. 柔性发光器件阵列及其制作方法. 中国: CN104676320A, 2015-06-03.

[18] 郭金霞, 王良臣, 梁萌, 王莉, 黄亚军, 伊晓燕, 刘志强. 氮化镓基发光器件的电极体系及其制作方法. 中国: CN104617202A, 2015-05-13.

[19] 孔庆峰, 郭金霞, 纪攀峰, 马平, 王文军, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 一种LED外延片的切裂方法. 中国: CN104505442A, 2015-04-08.

[20] 詹腾, 马骏, 刘志强, 伊晓燕, 王军喜, 李晋闽. 电容式结构的发光二极管集成芯片及其制备方法. 中国: CN104465921A, 2015-03-25.

[21] 贾利芳, 何志, 刘志强, 李迪, 樊中朝, 程哲, 梁亚楠, 王晓东, 杨富华. 一种新型GaN基增强型HEMT器件及其制备方法. 中国: CN104465748A, 2015-03-25.

[22] 贾利芳, 何志, 刘志强, 李迪, 樊中朝, 程哲, 梁亚楠, 王晓东, 杨富华. 一种新型GaN基增强型HEMT器件及其制备方法. 中国: CN104393045A, 2015-03-04.

[23] 孔庆峰, 马平, 纪攀峰, 卢鹏志, 杨华, 刘志强, 伊晓燕, 王军喜, 王国宏, 曾一平, 李晋闽. 在SiC衬底上形成有导光层的GaN基LED的制造方法. 中国: CN104143593A, 2014.11.12.

[24] 郭金霞, 田婷, 赵勇兵, 刘志强, 伊晓燕, 王军喜, 李晋闽. 倒装高压发光二极管及其制作方法. 中国: CN103855149A, 2014.06.11.

[25] 詹腾, 马骏, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 无线隔离驱动式的照明系统. 中国: CN104184220A, 2014-12-03.

[26] 黄亚军, 王莉, 樊中朝, 刘志强, 伊晓燕. GaN基发光二极管的制备方法. 中国: CN103956415A, 2014-07-30.

[27] 刘娜, 孙雪娇, 孔庆峰, 梁萌, 王莉, 魏同波, 刘志强, 伊晓燕, 王军喜, 李晋闽. 提高光提取效率发光二极管的制备方法. 中国: CN103943739A, 2014-07-23.

[28] 刘娜, 孙雪娇, 孔庆峰, 梁萌, 王莉, 魏同波, 刘志强, 伊晓燕, 王军喜, 李晋闽. 抑制电极光吸收的发光二极管的制备方法. 中国: CN103943738A, 2014-07-23.

[29] 谢海忠, 纪攀峰, 李璟, 刘志强, 伊晓燕, 王军喜, 李晋闽. 一种芯片尺寸级氮化镓基晶体管及其制备方法. 中国: CN103943677A, 2014-07-23.

[30] 郭恩卿, 伊晓燕, 刘志强, 王国宏, 王军喜, 李晋闽. 一种氮化镓薄膜的大面积连续无损激光剥离方法. 中国: CN103839777A, 2014-06-04.

[31] 郭恩卿, 伊晓燕, 刘志强, 陈宇, 王军喜, 李晋闽. 插入匀化电流结构的发光器件及其制造方法. 中国: CN103811610A, 2014-05-21.

[32] 王兵, 伊晓燕, 孔庆峰, 刘志强, 王军喜, 王国宏, 李晋闽. 采用复合透明导电层的发光二极管及其制备方法. 中国: CN103730558A, 2014-04-16.

[33] 梁萌, 杨华, 刘志强, 郭恩卿, 伊晓燕, 王军喜, 王国宏, 李晋闽. 一种氮化镓基外延膜的选区激光剥离方法. 中国: CN103700736A, 2014-04-02.

[34] 梁萌, 杨华, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 一种用于LED的晶圆级封装的芯片转移方法. 中国: CN103647012A, 2014-03-19.

[35] 王莉, 谢海忠, 刘志强, 伊晓燕, 郭恩卿, 王军喜, 李晋闽. 一种晶圆级基板微通孔电镀方法. 中国: CN103646923A, 2014-03-19.

[36] 谢海忠, 王莉, 杨华, 李璟, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 晶圆级微透镜压印成型方法. 中国: CN103579467A, 2014-02-12.

[37] 孔庆峰, 郭金霞, 马平, 王丽, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 在第一次光刻工艺中对准方形晶圆的方法. 中国: CN103529658A, 2014-01-22.

[38] 田婷, 赵勇兵, 詹腾, 郭金霞, 伊晓燕, 刘志强, 李璟, 王国宏. 一种交流发光二极管. 中国: CN103367386A, 2013-10-23.

[39] 詹腾, 王国宏, 郭金霞, 李璟, 伊晓燕, 刘志强, 王军喜, 李晋闽. 任意切割式高压LED器件的制作方法. 中国: CN103236474A, 2013-08-07.

[40] 程滟, 詹腾, 郭金霞, 李璟, 刘志强, 伊晓燕, 王国宏, 李晋闽. 柔性透明导电层互联的阵列式LED器件制作方法. 中国: CN103227250A, 2013-07-31.

[41] 李智, 张逸韵, 程滟, 赵勇兵, 刘志强, 伊晓燕, 王国宏. 应用石墨烯作为导热层的倒装结构发光二极管. 中国: CN103066195A, 2013-04-24.

[42] 程滟, 汪炼成, 刘志强, 伊晓燕, 王国宏. 制作柔性金字塔阵列GaN基半导体发光二极管的方法. 中国: CN102983234A, 2013-03-20.

[43] 谢海忠, 张扬, 杨华, 李璟, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 氮化镓基3D垂直结构发光二极管的结构. 中国: CN102969418A, 2013-03-13.

[44] 谢海忠, 张扬, 杨华, 李璟, 刘志强, 伊晓燕, 王军喜, 王国宏, 李晋闽. 氮化镓基3D垂直结构发光二极管的制作方法. 中国: CN102969411A, 2013-03-13.

[45] 程滟, 汪炼成, 刘志强, 伊晓燕, 王国宏. 制作纳米级柱形阵列氮化镓基正装结构发光二级管的方法. 中国: CN102956774A, 2013-03-06.

[46] 田婷, 詹腾, 张逸韵, 郭金霞, 李璟, 伊晓燕, 刘志强, 王国宏. 制作倒装高电压交直流发光二极管的方法. 中国: CN102903805A, 2013-01-30.

[47] 郭恩卿, 伊晓燕, 王国宏, 刘志强. 半导体发光器件及其制造方法. 中国: CN102891232A, 2013-01-23.

[48] 詹腾, 张杨, 李璟, 刘志强, 伊晓燕, 王国宏. 阵列式高压LED器件的制作方法. 中国: CN102867837A, 2013-01-09.

[49] 张杨, 詹腾, 李璟, 刘志强, 伊晓燕, 王国宏. 空气桥电极互联阵列式LED器件的制作方法. 中国: CN102832225A, 2012-12-19.

[50] 汪炼成, 马骏, 刘志强, 伊晓燕, 王国宏. 利用热应力化学腐蚀分离蓝宝石和氮化镓基外延层的方法. 中国: CN102709415A, 2012-10-03.

[51] 汪炼成, 马骏, 刘志强, 伊晓燕, 王国宏. 制作微纳金字塔氮化镓基垂直结构发光二极管阵列的方法. 中国: CN102694093A, 2012-09-26.

[52] 孙波, 赵丽霞, 伊晓燕, 刘志强, 魏学成, 王国宏. 银纳米线透明电极氮化镓基发光二极管及其制作方法. 中国: CN102623606A, 2012-08-01.

[53] 孙波, 赵丽霞, 伊晓燕, 刘志强, 魏学成, 王国宏. 纳米氮化镓发光二极管的制作方法. 中国: CN102623590A, 2012-08-01.

[54] 孙波, 赵丽霞, 伊晓燕, 刘志强, 魏学成, 王国宏. 制备氮化镓绿光发光二极管外延结构的方法. 中国: CN102623588A, 2012-08-01.

[55] 孙波, 赵丽霞, 伊晓燕, 刘志强, 魏学成, 王国宏. 纳米无荧光粉氮化镓白光发光二极管的制作方法. 中国: CN102610715A, 2012-07-25.

[56] 孙波, 赵丽霞, 伊晓燕, 刘志强, 魏学成, 王国宏. 大面积制作纳米氮化镓图形衬底的方法. 中国: CN102610716A, 2012-07-25.

[57] 黄亚军, 樊中朝, 刘志强, 伊晓燕, 季安, 王军喜. 高提取效率氮化镓发光二极管的制作方法. 中国: CN102064242A, 2011.05.18.

[58] 刘志强, 郭恩卿, 伊晓燕, 汪炼成, 王国宏, 李晋闽. 栅极调制垂直结构GaN基发光二极管的器件结构及制备方法. 中国: CN102064261A, 2011.05.18.

[59] 詹腾, 汪炼成, 郭恩卿, 刘志强, 伊晓燕, 王国宏. 氮化镓基垂直结构发光二极管隐形电极的制作方法. 中国: CN102208502A, 2011-10-05.

[60] 孙波, 伊晓燕, 刘志强, 汪炼成, 郭恩卿, 王国宏. 自支撑氮化镓衬底的制作方法. 中国: CN102208340A, 2011-10-05.

[61] 刘志强, 郭恩卿, 伊晓燕, 汪炼成, 王国宏, 李晋闽. 栅极调制正装结构GaN基发光二极管的器件结构及制备方法. 中国: CN102064260A, 2011-05-18.

[62] 汪炼成, 郭恩卿, 刘志强, 伊晓燕, 王国宏. 氮化镓基垂直结构发光二极管转移衬底的二次电镀方法. 中国: CN101974772A, 2011-02-16.

[63] 郭恩卿, 刘志强, 汪炼成, 伊晓燕, 王莉, 王国宏. 氮化镓基垂直结构发光二极管桥联电极制备方法. 中国: CN101937956A, 2011-01-05.

[64] 汪炼成, 郭恩卿, 刘志强, 伊晓燕, 王国宏. 氮化镓基垂直结构发光二极管转移衬底的腐蚀方法. 中国: CN101937951A, 2011-01-05.

[65] 郭恩卿, 刘志强, 汪炼成, 伊晓燕, 王莉, 王国宏. 氮化镓基垂直结构发光二极管电极结构的制作方法. 中国: CN101937957A, 2011-01-05.

[66] 段瑞飞, 王良臣, 刘志强, 季安, 王国宏, 曾一平, 李晋闽. 减少激光剥离损伤的方法. 中国: CN101924065A, 2010-12-22.

[67] 樊晶美, 王良臣, 刘志强. 一种制备氮化镓基垂直结构发光二极管的方法. 中国: CN101853903A, 2010-10-06.

[68] 王立彬, 伊晓燕, 刘志强, 陈 宇, 郭德博, 王良臣. 一种氮化镓基小芯片LED阵列结构及制备方法. 中国: CN101286539, 2008-10-15.

[69] 王良臣, 伊晓燕, 刘志强. 采用衬底表面粗化技术的倒装结构发光二极管制作方法. 中国: CN101043059, 2007-09-26.

出版信息

   
发表论文
[1] Zhang, Shuo, Yan, Yan, Feng, Tao, Yin, Yue, Ren, Fang, Liang, Meng, Wu, Chaoxing, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Liu, Zhiqiang. Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array. CRYSTALS[J]. 2021, 11(6): http://dx.doi.org/10.3390/cryst11060686.
[2] Ren, Fang, Liu, Bingyao, Chen, Zhaolong, Yin, Yue, Sun, Jingyu, Zhang, Shuo, Jiang, Bei, Liu, Bingzhi, Liu, Zhetong, Wang, Jianwei, Liang, Meng, Yuan, Guodong, Yan, Jianchang, Wei, Tongbo, Yi, Xiaoyan, Wang, Junxi, Zhang, Yong, Li, Jinmin, Gao, Peng, Liu, Zhongfan, Liu, Zhiqiang. Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer. SCIENCE ADVANCES[J]. 2021, 7(31): [3] Wu, Shaoteng, Yi, Xiaoyan, Tian, Shuang, Zhang, Shuo, Liu, Zhiqiang, Wang, Liancheng, Wang, Junxi, Li, Jinmin. Understanding homoepitaxial growth of horizontal kinked GaN nanowires. NANOTECHNOLOGY[J]. 2021, 32(9): http://dx.doi.org/10.1088/1361-6528/abcc24.
[4] Chen Lin, Teng Zhan, Junxi Wang, Jinmin Li, Zhiqiang Liu, Xiaoyan Yi. Investigations about Al and Cu-Based Planar Spiral Inductors on Sapphire for GaN-Based RF Applications. Applied Sciences[J]. 2021, 11: https://doaj.org/article/78d4dfaeecad46e4b41e0cdff68512eb.
[5] 李晋闽, 刘志强, 魏同波, 闫建昌, 伊晓燕, 王军喜. 中国半导体照明发展综述. 光学学报. 2021, 41(1): 285-297, http://lib.cqvip.com/Qikan/Article/Detail?id=7104409811.
[6] Zhang, Shuo, Liu, Bingyao, Ren, Fang, Yin, Yue, Wang, Yunyu, Chen, Zhaolong, Jiang, Bei, Liu, Bingzhi, Liu, Zhetong, Sun, Jingyu, Liang, Meng, Yan, Jianchang, Wei, Tongbo, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Gao, Peng, Liu, Zhongfan, Liu, Zhiqiang. Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films. SMALL[J]. 2021, 17(19): http://dx.doi.org/10.1002/smll.202100098.
[7] Wan, Rongqiao, Gao, Xiang, Wang, Liancheng, Zhang, Shuo, Chen, Xiongbin, Liu, Zhiqiang, Yi, Xiaoyan, Wang, Junxi, Li, Junhui, Zhu, Wenhui, Li, Jinmin. Phosphor-free single chip GaN-based white light emitting diodes with a moderate color rendering index and significantly enhanced communications bandwidth. PHOTONICS RESEARCH[J]. 2020, 8(7): 1110-1117, http://lib.cqvip.com/Qikan/Article/Detail?id=7102618629.
[8] Chen, Qi, Yin, Yue, Ren, Fang, Liang, Meng, Yi, Xiaoyan, Liu, Zhiqiang. Van der Waals Epitaxy of III-Nitrides and Its Applications. MATERIALSnull. 2020, 13(17): https://doaj.org/article/052194435c124e2b89720aacd453b410.
[9] Chang, Hongliang, Chen, Zhaolong, Liu, Bingyao, Yang, Shenyuan, Liang, Dongdong, Dou, Zhipeng, Zhang, Yonghui, Yan, Jianchang, Liu, Zhiqiang, Zhang, Zihui, Wang, Junxi, Li, Jinmin, Liu, Zhongfan, Gao, Peng, Wei, Tongbo. Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes. ADVANCED SCIENCE[J]. 2020, 7(15): https://doaj.org/article/32f1419021b4404d8ab8f34cfc1135ec.
[10] Zhang, Xiang, Chen, Zhaolong, Chang, Hongliang, Yan, Jianchang, Yang, Shenyuan, Wang, Junxi, Gao, Peng, Wei, Tongbo. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS[J]. 2020, https://www.webofscience.com/wos/woscc/full-record/WOS:000546499200071.
[11] Zhang, Shuo, Zhang, Xinran, Ren, Fang, Yin, Yue, Feng, Tao, Song, Wurui, Wang, Guodong, Liang, Meng, Xu, Jianlong, Wang, Jianwei, Wang, Junxi, Li, Jinmin, Yi, Xiaoyan, Liu, Zhiqiang. High responsivity GaN nanowire UVA photodetector synthesized by hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS[J]. 2020, 128(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000585807400002.
[12] 刘志强. vander walls epitaxy of III-V compounds and their applications. Chinese journal of luminescence. 2020, [13] Chang, Hongliang, Liu, Bingyao, Liang, Dongdong, Gao, Yaqi, Yan, Jianchang, Liu, Zhetong, Liu, Zhiqiang, Wang, Junxi, Li, Jinmin, Gao, Peng, Wei, Tongbo. Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes. APPLIED PHYSICS LETTERS[J]. 2020, 117(18): https://www.webofscience.com/wos/woscc/full-record/WOS:000591342600001.
[14] Zhang, Shuo, Wang, Yunyu, Ren, Fang, Feng, Tao, Wan, Rongqiao, Zhao, Shuai, Liang, Meng, Wang, Junxi, Li, Jinmin, Liu, Zhiqiang, Yi, Xiaoyan. Systematic study of vertically aligned ZnO nanowire arrays synthesized on p-GaN substrate by hydrothermal method. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 59(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000566406900003.
[15] Wu, Shaoteng, Wu, Shaofei, Song, Wenqing, Wang, Liancheng, Yi, Xiaoyan, Liu, Zhiqiang, Wang, Junxi, Li, Jinmin. Crystal phase evolution in kinked GaN nanowires. NANOTECHNOLOGY[J]. 2020, 31(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000520192200001.
[16] Zhang, Xinran, Zhang, Shuo, Wang, Guodong, Wang, Yunyu, Liang, Meng, Zhan, Teng, Wang, Junxi, Li, Jinmin, Liu, Zhiqiang, Yi, Xiaoyan. Near-ultraviolet chip-based phosphor-converted solar-spectrum white light-emitting diode. OPTICAL ENGINEERING[J]. 2020, 59(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000512378900025.
[17] Chen, Zhaolong, Chang, Hongliang, Cheng, Ting, Wei, Tongbo, Wang, Ruoyu, Yang, Shenyuan, Dou, Zhipeng, Liu, Bingyao, Zhang, Shishu, Xie, Yadian, Liu, Zhiqiang, Zhang, Yanfeng, Li, Jinmin, Ding, Feng, Gao, Peng, Liu, Zhongfan. Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes. ADVANCED FUNCTIONAL MATERIALS[J]. 2020, 30(31): https://www.webofscience.com/wos/woscc/full-record/WOS:000539575700001.
[18] Song, Wurui, Ren, Fang, Wang, Yunyu, Yin, Yue, Zhang, Shuo, Shi, Bo, Feng, Tao, Wang, Jianwei, Liang, Meng, Zhang, Yiyun, Wei, Tongbo, Yan, Jianchang, Wang, Junxi, Li, Jinmin, Yi, Xiaoyan, Liu, Zhiqiang. GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate. CRYSTALS[J]. 2020, 10(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000580298000001.
[19] 陈琪, 尹越, 任芳, 梁萌, 魏同波, 伊晓燕, 刘志强. Ⅲ-Ⅴ化合物的范德华外延生长与应用. 发光学报[J]. 2020, 41(8): 899-912, http://lib.cqvip.com/Qikan/Article/Detail?id=7102389559.
[20] 刘志强. Key Factors to Address the Issue of Global Energy and Environment Crisis. ES Materials and Manufacturing. 2019, [21] Ci, Haina, Chang, Hongliang, Wang, Ruoyu, Wei, Tongbo, Wang, Yunyu, Chen, Zhaolong, Sun, Yuanwei, Dou, Zhipeng, Liu, Zhiqiang, Li, Jinmin, Gao, Peng, Liu, Zhongfan. Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer. ADVANCED MATERIALS[J]. 2019, 31(29): http://dx.doi.org/10.1002/adma.201901624.
[22] Kang, Junjie, Choi, HakJong, Ren, Fang, Ao, Jinping, Li, Hongjian, Li, Yi, Du, Weichuan, Zhou, Kun, Tan, Hao, Huh, Daihong, Li, Panpan, Liang, Meng, Gao, Songxin, Tang, Chun, Yi, Xiaoyan, Lee, Heon, Liu, Zhiqiang. Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2019, 58(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000474924400001.
[23] Lin, Chen, Zhan, Teng, Liu, Zhiqiang, Yi, Xiaoyan, Xie, Hongyun, Wang, Junxi, Li, Jinmin. A Wirelessly Controllable Optoelectronic Device for Optogenetics. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2019, 31(12): 915-918, [24] 尹越, 田婷, 刘志强, 王江华, 伊晓燕, 梁萌, 闫建昌, 王军喜, 李晋闽. 共晶焊倒装高压LED的制备及性能分析. 照明工程学报. 2019, 30(1): 26-31, http://lib.cqvip.com/Qikan/Article/Detail?id=7001377322.
[25] 窦志鹏, 陈召龙, 李宁, 刘秉尧, 张敬民, 魏同波, 刘志强, 罗强, 廖蕾, 高鹏. 基于球差矫正电镜在原子尺度探究氮化铝在蓝宝石衬底上的生长过程. 电子显微学报[J]. 2019, 38(3): 215-220, http://lib.cqvip.com/Qikan/Article/Detail?id=7002129296.
[26] 田婷, 任芳, 梁萌, 王江华, 刘志强, 伊晓燕, 袁国栋, 王军喜, 李晋闽. 阵列式高压交直流LED芯片的隔离工艺. 照明工程学报. 2019, 30(3): 81-85, http://lib.cqvip.com/Qikan/Article/Detail?id=7002322889.
[27] 刘志强. Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In). ES Materials and Manufacturing. 2019, [28] Wu, Shaoteng, Wang, Liancheng, Liu, Zhiqiang, Wang, Yunyu, Cheng, Cheng, Lin, Chen, Zhang, Shuo, Li, Tao, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence. NANOTECHNOLOGY[J]. 2019, 30(4): [29] Wang Qi, Yuan Guodong, Liu Wenqiang, Zhao Shuai, Zhang Lu, Liu Zhiqiang, Wang Junxi, Li Jinmin. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate. Chinese Physics. B[J]. 2019, 28(8): http://lib.cqvip.com/Qikan/Article/Detail?id=7002765369.
[30] Wang, Yunyu, Dheeraj, Dasa, Liu, Zhiqiang, Liang, Meng, Li, Yang, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Weman, Helge. AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene as a Buffer Layer. CRYSTAL GROWTH & DESIGN[J]. 2019, 19(10): 5516-5522, [31] Chen, Zhaolong, Liu, Zhiqiang, Wei, Tongbo, Yang, Shenyuan, Dou, Zhipeng, Wang, Yunyu, Ci, Haina, Chang, Hongliang, Qi, Yue, Yan, Jianchang, Wang, Junxi, Zhang, Yanfeng, Gao, Peng, Li, Jinmin, Liu, Zhongfan. Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. ADVANCED MATERIALS[J]. 2019, 31(23): [32] 万荣桥, 李滔, 刘志强, 伊晓燕, 王军喜, 李军辉, 朱文辉, 李晋闽, 汪炼成. Current diffusion and efficiency droop in vertical light emitting diodes. 中国物理B:英文版[J]. 2019, 561-569, http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574849485549.
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[126] 刘志强, 王良臣, 伊晓燕, 王立彬, 陈宇, 郭德博, 马龙. 倒装GaN基发光二极管阵列微透镜的粗化技术. 半导体学报. 2007, 496-499, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096820.
[127] 郭德博, 梁萌, 范曼宁, 师宏伟, 刘志强, 王国宏, 王良臣. 表面处理对P-GaN欧姆接触的影响. 半导体学报. 2007, 28(11): 1811-1814, http://lib.cqvip.com/Qikan/Article/Detail?id=25838042.
[128] 刘志强, 王良臣, 于丽娟, 郭金霞, 伊晓燕, 马龙, 王立彬, 陈宇. InP/Si键合界面热应力分析. 半导体光电. 2006, 27(4): 429-433, http://lib.cqvip.com/Qikan/Article/Detail?id=22691745.
[129] 伊晓燕, 郭金霞, 马龙, 王立彬, 陈宇, 刘志强, 王良臣. 倒装结构大功率蓝光LEDs的研制. 光电子.激光. 2006, 17(6): 693-696, http://lib.cqvip.com/Qikan/Article/Detail?id=22042956.
发表著作
(1) III-Nitride Materials, Devices and Nano-Structures, World Scientific Publishing, 2017-05, 第 2 作者
(2) Light-Emitting Diodes Materials , processing,Devices and Applications, springer, 2018-11, 第 2 作者

合作情况

与国内外科研机构及产业合作情况

国内:

北京大学、清华大学、南京大学、中山大学、厦门大学、吉林大学等科研机构

三安光电、湖南华磊、扬州中科、山西中科潞安等企业

国外:

美国北卡大学、普度大学、密歇根大学,日本德岛大学、名城大学,东京大学,丹麦科技大学、挪威科技大学,沙特阿卜杜拉国王大学,韩国首尔大学

指导学生

现指导学生

闫岩  硕士研究生  085204-材料工程  

冯涛  博士研究生  080903-微电子学与固体电子学  

陈琪  硕士研究生  080903-微电子学与固体电子学  

贾春阳  硕士研究生  080903-微电子学与固体电子学  

现指导学生

王蕴玉 微电子与固体电子学

林辰    微电子与固体电子学

任芳     微电子与固体电子学

尹越     微电子与固体电子学

张硕     微电子与固体电子学

冯涛     微电子与固体电子学

张欣冉  微电子与固体电子学

万荣桥  微电子与固体电子学



毕业学生

姓名      专业                         学位    毕业去向 年份

汪炼成   微电子与固体电子学 博士    出国        2012  

康俊杰   微电子与固体电子学 博士    出国        2013

李志      微电子与固体电子学  硕士   出国        2014

雷炎      微电子与固体电子学  硕士   出国        2014

李杨      微电子与固体电子学  硕士   出国        2015

周俊楠   微电子与固体电子学  硕士   企业        2017

程洪      微电子与固体电子学  硕士   企业        2017

黄洋      微电子与固体电子学  博士   企业        2018 

伍邵腾   微电子与固体电子学  博士   出国        2018

程程      微电子与固体电子学  硕士   企业        2018


  

主持科研项目

1十三五国家重点研发计划二期-200

2十三五国家重点研发计划二期-600

3十二五863 重大项目- 《大注入电流密度薄膜结构GaNLED关键制造技术及检测技术研发》(1360万) 

4科技部国际合作项目-《高效LED照明检测技术与标准化研究》(S2011GR0227)(25万) 

5中国科学院人才计划专项-青年创新促进会(40万) 

6国家自然科学青年基金-InAlN单边量子阱单边量子垒研究( No. 61306051(30) 

7广东省国际合作项目-25

8挪威cryanano公司国际合作项目- 9