080501-材料物理与化学

氮化物材料外延与器件结构
基于高In组分的氮化物光电材料研究

2003-09--2006-06 中国科学院半导体研究所 博士
2000-09--2003-08 山东大学 硕士
1996-09--2000-08 山东大学 学士

   

2015-01--2015-09 中国科学院半导体研究所 研究员
2009-01--2013-06 中国科学院半导体研究所 副研究员
2006-07--2009-01 中国科学院半导体研究所 助理研究员

   

（1） 深紫外LED关键材料与器件技术，院级级，2013
（2） 高效大功率GaN LED 外延及芯片技术，院级级，2013
（3） 高性能大功率LEDs外延、芯片及应用集成技术，一等奖，省级，2012
（4） 高效半导体照明产业化集成技术研究与开发，一等奖，其他级，2012

[1] 张韵",null,"刘喆. 激光照明装置. CN: CN112648548A, 2021-04-13.

[2] 张韵, 倪茹雪, 刘喆, 张连, 程哲. 一种AlGaN基二极管及其制备方法. CN: CN111341893B, 2021-03-26.

[3] 张韵, 叶蕾, 刘喆. 激光照明装置. CN: CN212510987U, 2021-02-09.

[4] 刘喆, 吴晨昱, 张韵. 高显色指数及色温可调的高光通量白光激光照明装置. CN: CN111578159A, 2020-08-25.

[5] 刘喆, 梁冬冬, 王军喜, 李晋闽. 柔性折叠的LED光动力治疗仪. CN: CN209500547U, 2019-10-18.

[6] 刘喆, 冯梁森, 张宁, 王军喜, 李晋闽. 制备氮化镓基纳米环结构的方法. CN: CN108682723A, 2018-10-19.

[7] 刘喆, 梁冬冬, 薛斌, 王军喜, 李晋闽. 采用氧化铟锡作为插入层的反射镜及其制备方法. CN: CN108198925A, 2018-06-22.

[8] 刘喆, 杨杰, 薛斌, 廖周, 王军喜, 李晋闽. 三基色激光器实现均光照明的系统. CN: CN106773073A, 2017-05-31.

[9] 刘喆, 杨杰, 薛斌, 王军喜, 李晋闽. 同时用于照明与通信的激光光源装置. CN: CN106684673A, 2017-05-17.

[10] 任鹏, 张宁, 薛斌, 刘喆, 王军喜, 李晋闽. 氮化镓纳米锥和氮化镓纳米柱混合阵列的制作方法. CN: CN105957801A, 2016-09-21.

[11] 薛斌, 任鹏, 张宁, 刘喆, 王军喜, 李晋闽. 一种基于激光器的车灯系统. CN: CN105611692A, 2016-05-25.

[12] 薛斌, 任鹏, 张宁, 刘喆, 王军喜, 李晋闽. 一种激光器显示系统. CN: CN105388690A, 2016-03-09.

[13] 张宁, 任鹏, 刘喆, 李晋闽, 王军喜. 提高Si衬底LED出光效率的外延结构及制备方法. CN: CN104538519A, 2015-04-22.

[14] 张宁, 魏学成, 刘桂鹏, 刘喆, 王军喜, 李晋闽. 一种控制半导体LED外延片内应力的装置. CN: CN103779453A, 2014-05-07.

[15] 张宁, 任鹏, 刘喆, 李晋闽, 王军喜. 一种提高发光效率的LED结构. CN: CN103779462A, 2014-05-07.

[16] 张宁, 刘喆, 李晋闽, 王军喜. 具有应力释放层的绿光LED外延结构及制作方法. CN: CN103137807A, 2013-06-05.

[17] 吴奎, 魏同波, 蓝鼎, 闫建昌, 刘喆, 王军喜, 张逸韵, 李晋闽. 基于湿法剥离垂直结构发光二极管的制作方法. CN: CN102709411A, 2012-10-03.

[18] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 纳米柱发光二极管的制作方法. CN: CN102709410A, 2012-10-03.

[19] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 用于GaN基LED的ITO纳米碗阵列的粗化方法. CN: CN102694088A, 2012-09-26.

[20] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 蓝宝石纳米碗阵列图形衬底的制作方法. CN: CN102691102A, 2012-09-26.

[21] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 李晋闽. 在低位错GaN纳米柱上外延LED的方法. CN: CN102683523A, 2012-09-19.

[22] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 具有空气桥结构发光二极管的制作方法. CN: CN102683522A, 2012-09-19.

[23] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 李晋闽. 低位错氮化镓的生长方法. CN: CN102409406A, 2012-04-11.

[24] 赵婧, 刘喆, 王军喜, 李晋闽. Co掺杂CaO稀磁半导体材料的制备方法. CN: CN102351229A, 2012-02-15.

[25] 赵婧, 刘喆, 王军喜, 李晋闽. Fe掺杂CuO稀磁半导体材料的制备方法. CN: CN102351236A, 2012-02-15.

[26] 贠利君, 吴奎, 刘乃鑫, 刘喆, 王军喜. 一种紫外LED的制作方法. CN: CN102148300A, 2011-08-10.

[27] 孙莉莉, 闫建昌, 王军喜, 刘乃鑫, 魏同波, 魏学成, 马平, 刘喆, 曾一平, 王国宏, 李晋闽. 一种增强LED出光效率的粗化方法. CN: CN101976712A, 2011-02-16.

[28] 孙莉莉, 闫建昌, 王军喜, 刘乃鑫, 魏同波, 魏学成, 马平, 刘喆, 曾一平, 王国宏, 李晋闽. 适用于氮化物LED外延生长的纳米级图形衬底的制备方法. CN: CN101969088A, 2011-02-09.

[29] 纪攀峰, 李京波, 闫建昌, 刘乃鑫, 刘喆, 王军喜, 李晋闽. 一种提高镁在Ⅲ-Ⅴ族氮化物中激活效率的方法. CN: CN101740690A, 2010-06-16.

[30] 纪攀峰, 李京波, 闫建昌, 刘乃鑫, 刘喆, 王军喜, 李晋闽. 一种对Ⅲ-Ⅴ氮化物进行n型和p型掺杂的方法. CN: CN101710569A, 2010-05-19.

[31] 段瑞飞, 刘 喆, 钟兴儒, 魏同波, 马 平, 王军喜, 曾一平, 李晋闽. 一种制备氮化物单晶衬底的氢化物气相外延装置. CN: CN101205627A, 2008-06-25.

[32] 刘喆, 李晋闽, 王军喜, 王晓亮, 王启元, 刘宏新, 王俊, 曾一平. 在硅衬底上生长无裂纹氮化镓薄膜的方法. CN: CN1967778A, 2007-05-23.

[33] 刘 喆, 王军喜, 钟兴儒, 李晋闽, 曾一平, 段瑞飞, 马 平, 魏同波, 林郭强. 制造厚膜氮化物材料的氢化物气相外延装置. CN: CN1881533A, 2006-12-20.

   

[1] Zhang, Lian, Xinyuan Wang, Jianping Zeng, Lifang Jia, Zhe Cheng, Ai Yujie, 刘喆, Wei Tan, 张韵. AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific On-Resistance. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(12): 6633 -6636, [2] Ye, Lei, Peng, Xinglin, Yang, Jie, Liu, Xuejian, Liu, Zehua, Yang, Hua, Chen, Ping, Liu, Zhe, Zhang, Yun. Phosphor-Converted Laser-Based Illuminant With High Color Rendering Index and Low Blue Light Hazard. IEEE PHOTONICS JOURNAL[J]. 2022, 14(4): [3] Hongrui Lv, Ai Yujie, 刘喆, lin defeng, Lifang Jia, Zhe Cheng, Jie Yang, 张韵. Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor. Journal of Semiconductors[J]. 2022, 43(11): 114101-, [4] Wang, Lin, Cheng, Zhe, Yu, ZhiGuo, Lin, DeFeng, Liu, Zhe, Jia, LiFang, Zhang, Yun. Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers. APPLIED SCIENCES-BASEL[J]. 2021, 11(15): http://dx.doi.org/10.3390/app11157057.
[5] Ni, Ruxue, Yu, Zhiguo, Liu, Zhe, Zhang, Lian, Jia, Lifang, Zhang, Yun. Light Extraction and Auger Recombination in AlGaN-Based Ultraviolet Light-Emitting Diodes. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2020, 32(16): 971-974, https://www.webofscience.com/wos/woscc/full-record/WOS:000550641300002.
[6] Wu, Chenyu, Liu, Zhe, Yu, Zhiguo, Peng, Xinlin, Liu, Zehua, Liu, Xuejian, Yao, Xiumin, Zhang, Yun. Phosphor-converted laser-diode-based white lighting module with high luminous flux and color rendering index. OPTICS EXPRESS[J]. 2020, 28(13): 19085-19096, http://dx.doi.org/10.1364/OE.393310.
[7] Feng, Qiong, Ai, Yujie, Liu, Zhe, Yu, Zhiguo, Yang, Kun, Dong, Boyu, Guo, Bingliang, Zhang, Yun. Structural characterization of AlN (11-22) films prepared by sputtering and thermal annealing on m-plane sapphire substrates. SUPERLATTICES AND MICROSTRUCTURES[J]. 2020, 141: http://dx.doi.org/10.1016/j.spmi.2020.106493.
[8] Ni, Ruxue, Chuo, ChangCheng, Yang, Kun, Ai, Yujie, Zhang, Lian, Cheng, Zhe, Liu, Zhe, Jia, Lifang, Zhang, Yun. AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 794: 8-12, http://dx.doi.org/10.1016/j.jallcom.2019.04.256.
[9] Feng, LiangSen, Liu, Zhe, Zhang, Ning, Xue, Bin, Wang, JunXi, Li, JinMin. Effect of Nanorod Diameters on Optical Properties of GaN-Based Dual-Color Nanorod Arrays. CHINESE PHYSICS LETTERS[J]. 2019, 36(2): http://lib.cqvip.com/Qikan/Article/Detail?id=87767566504849574850484953.
[10] 冯梁森, 刘喆, 张宁, 薛斌, 王军喜, 李晋闽. Effect of Nanorod Diameters on Optical Properties of GaN-Based Dual-Color Nanorod Arrays. 中国物理快报:英文版[J]. 2019, 71-74, http://lib.cqvip.com/Qikan/Article/Detail?id=87767566504849574850484953.
[11] Xue, Bin, Liu, Zhe, Yang, Jie, Feng, Liangsen, Zhang, Ning, Wang, Junxi, Li, Jinmin. Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications. OPTICS COMMUNICATIONS[J]. 2018, 410: 525-530, http://dx.doi.org/10.1016/j.optcom.2017.10.086.
[12] Yang, Jie, Liu, Zhe, Xue, Bin, Liao, Zhou, Feng, Liangsen, Zhang, Ning, Wang, Junxi, Li, Jinmin. Highly Uniform White Light-Based Visible Light Communication Using Red, Green, and Blue Laser Diodes. IEEE PHOTONICS JOURNAL[J]. 2018, 10(2): https://doaj.org/article/505994e55f2e4c968f9d70d1386a451a.
[13] Yang, Jie, Liu, Zhe, Xue, Bin, Wang, Junxi, Li, Jinmin. Research on phosphor-conversion laser-based white light used as optical source of VLC and illumination. OPTICAL AND QUANTUM ELECTRONICS[J]. 2017, 49(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000400556100046.
[14] Ren, Peng, Zhang, Ning, Xue, Bin, Liu, Zhe, Wang, Junxi, Li, Jinmin. A novel usage of hydrogen treatment to improve the indium incorporation and internal quantum efficiency of green InGaN/GaN multiple quantum wells simultaneously. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2016, 49(17): https://www.webofscience.com/wos/woscc/full-record/WOS:000374146600006.
[15] Ren Peng, Han Gang, Fu Binglei, Xue Bin, Zhang Ning, Liu Zhe, Zhao Lixia, Wang Junxi, Li Jinmin. Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition. 中国物理快报(英文版)[J]. 2016, 145-149, http://lib.cqvip.com/Qikan/Article/Detail?id=669386590.
[16] Cho, ErChieh, Huang, JuiHsiung, Li, ChiuPing, ChangJian, CaiWan, Lee, KuenChan, Hsiao, YuSheng, Huang, JenHsien. Graphene-based thermoplastic composites and their application for LED thermal management. CARBON[J]. 2016, 102: 66-73, http://dx.doi.org/10.1016/j.carbon.2016.01.097.
[17] Li Jinmin, Liu Zhe, Liu Zhiqiang, Yan Jianchang, Wei Tongbo, Yi Xiaoyan, Wang Junxi. Advances and prospects in nitrides based light-emitting-diodes. JOURNAL OF SEMICONDUCTORS[J]. 2016, 37(6): [18] Ren, Peng, Zhang, Ning, Liu, Zhe, Xue, Bin, Li, Jinmin, Wang, Junxi. Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(4): http://ir.semi.ac.cn/handle/172111/27024.
[19] Fu, Binglei, Feng, Xiangxu, Si, Zhao, Liu, Zhe, Liu, Zhiqiang, Liu, Naixin, Wei, Xuecheng, Lu, Hongxi, Li, Jinmin, Wang, Junxi. The Effects of Mg Back Diffusion Capping Layers on the Performance Enhancement of Blue Light Emitting Diodes With a p-InGaN Last Barrier. JOURNAL OF DISPLAY TECHNOLOGY[J]. 2015, 11(1): 60-64, https://www.webofscience.com/wos/woscc/full-record/WOS:000349892400009.
[20] Fu, Binglei, Liu, Zhe, Liu, Naixin, Li, Zhi, Si, Zhao, Wei, Xuecheng, Sun, Baojuan, Ma, Ping, Wei, Tongbo, Li, Jinmin, Wang, Junxi. Elimination of defects in In-Mg codoped GaN layers probed by strain analysis. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2014, 53(6): 060301-, https://www.webofscience.com/wos/woscc/full-record/WOS:000338104600002.
[21] Fu, Binglei, Kang, Junjie, Wei, Tongbo, Liu, Zhiqiang, Liu, Zhe, Liu, Naixin, Xiong, Zhuo, Li, Zhi, Wei, Xuecheng, Lu, Hongxi, Yi, Xiaoyan, Li, Jinmin, Wang, Junxi. Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer. OPTICS EXPRESS[J]. 2014, 22(17): A1284-A1291, https://www.webofscience.com/wos/woscc/full-record/WOS:000340717300009.
[22] Zhu, Shaoxin, Wang, Junxi, Yan, Jianchang, Zhang, Yun, Pei, Yanrong, Si, Zhao, Yang, Hua, Zhao, Lixia, Liu, Zhe, Li, Jinmin. Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes. ECS SOLID STATE LETTERS[J]. 2014, 3(3): R11-R13, http://ir.semi.ac.cn/handle/172111/26449.
[23] Fu Binglei, Liu Naixin, Liu Zhe, Li Jinmin, Wang Junxi. Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure. JOURNAL OF SEMICONDUCTORS[J]. 2014, 35(11): 114007-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5341506&detailType=1.
[24] 王军喜, 刘喆, 魏同波, 王国宏. 第3代半导体材料在光电器件方面的发展和应用. 新材料产业[J]. 2014, 18-20, http://lib.cqvip.com/Qikan/Article/Detail?id=48955444.
[25] Fu, Binglei, Liu, Naixin, Zhang, Ning, Si, Zhao, Wei, Xuecheng, Wang, Xiaodong, Lu, Hongxi, Liu, Zhe, Wei, Tongbo, Yi, Xiaoyan, Li, Jinmin, Wang, Junxi. The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS[J]. 2014, 43(4): 1244-1248, https://www.webofscience.com/wos/woscc/full-record/WOS:000334182700061.
[26] 张宁, 刘喆, 司朝, 任鹏, 王晓东, 冯向旭, 董鹏, 杜成孝, 朱绍歆, 付丙磊, 路红喜, 李晋闽, 王军喜. Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers. CHINESE PHYSICS LETTERS[J]. 2013, 30(8): 129-131, http://ir.semi.ac.cn/handle/172111/24792.
[27] Zhe Liu. Modification of Carrier Distribution in Dual-wavelength Lighting-emitting Diodes by Specified Mg Doped Barrier. Photonics Technology Letters. 2013, [28] Si, Zhao, Wei, Tongbo, Ma, Jun, Yan, Jianchang, Wei, Xuecheng, Lu, Hongxi, Fu, Binglei, Zhu, Shaoxin, Liu, Zhe, Wang, Junxi, Li, Jinmin. Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier. ECS SOLID STATE LETTERS[J]. 2013, 2(10): R37-R39, https://www.webofscience.com/wos/woscc/full-record/WOS:000322995700008.
[29] Si, Zhao, Wei, Tongbo, Yan, Jianchang, Ma, Jun, Zhang, Ning, Liu, Zhe, Wei, Xuecheng, Wang, Xiaodong, Lu, Hongxi, Wang, Junxi, Li, Jinmin. Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2013, 210(3): 559-562, https://www.webofscience.com/wos/woscc/full-record/WOS:000315959800022.
[30] Zhe Liu. Competition between polarization field and defects. Chinese physics letter. 2013, [31] Zhang, Ning, Liu, Zhe, Wei, Tongbo, Zhang, Lian, Wei, Xuecheng, Wang, Xiaodong, Lu, Hongxi, Li, Jinmin, Wang, Junxi. Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes. APPLIED PHYSICS LETTERS[J]. 2012, 100(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000300065300090.
[32] Yun Lijun, Wei Tongbo, Yan Jianchang, Liu Zhe, Wang Junxi, Li Jinmin. MOCVD epitaxy of InAlN on different templates. 半导体学报[J]. 2011, 32(9): 093001-1, http://lib.cqvip.com/Qikan/Article/Detail?id=39277484.
[33] 纪攀峰, 刘乃鑫, 魏同波, 刘喆, 路红喜, 王军喜, 李晋闽. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer. 半导体学报[J]. 2011, 32(11): 114006-1, http://lib.cqvip.com/Qikan/Article/Detail?id=39822433.
[34] 纪攀峰, 刘乃鑫, 魏同波, 刘喆, 路红喜, 王军喜, 李晋闽. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer. 半导体学报[J]. 2011, 32(11): 114006-1, http://lib.cqvip.com/Qikan/Article/Detail?id=39822433.
[35] Ji Panfeng, Liu Naixin, Wei Xuecheng, Liu Zhe, Lu Hongxi, Wang Junxi, Li Jinmin. Influence of growth conditions on the V-defects in InGaN/GaN MQWs. 半导体学报[J]. 2011, 32(10): 105006-1, http://lib.cqvip.com/Qikan/Article/Detail?id=39451795.
[36] Yan, Jianchang, Wang, Junxi, Cong, Peipei, Sun, Lili, Liu, Naixin, Liu, Zhe, Zhao, Chao, Li, Jinmin. Improved performance of UV-LED by p-AlGaN with graded composition. PHYSICA STATUS SOLIDI(C) CURRENT TOPICS IN SOLID STATE PHYSICS[J]. 2011, 8(2): 461-463, http://ir.semi.ac.cn/handle/172111/23149.
[37] 刘乃鑫, 王军喜, 闫建昌, 刘喆, 阮军, 李晋闽. Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQW grown by MOCVD. 半导体学报[J]. 2009, 21-25, http://lib.cqvip.com/Qikan/Article/Detail?id=32337819.
[38] Liu Naixin, Wang Junxi, Yan Jianchang, Liu Zhe, Ruan Jun, Li Jinmin. Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQW grown by MOCVD. 半导体学报[J]. 2009, 21-25, http://lib.cqvip.com/Qikan/Article/Detail?id=32337819.
[39] 闫建昌, 王军喜, 刘乃鑫, 刘喆, 阮军, 李晋闽. High quality AlGaN grown on a high temperature AlN template by MOCVD. 半导体学报[J]. 2009, 13-16, http://lib.cqvip.com/Qikan/Article/Detail?id=31757812.
[40] 林郭强, 曾一平, 段瑞飞, 魏同波, 马平, 王军喜, 刘喆, 王晓亮, 李晋闽. HVPE气相外延法在c面蓝宝石上选区外延生长GaN及其表征. 半导体学报[J]. 2008, 29(3): 530-533, http://lib.cqvip.com/Qikan/Article/Detail?id=26739414.
[41] 刘喆, 王晓亮, 王军喜, 胡国新, 李建平, 曾一平, 李晋闽. 采用AlN缓冲层在Si（111）衬底上生长GaN的形貌. 半导体学报[J]. 2007, 230-233, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096890.
[42] 魏同波, 王军喜, 刘喆, 李晋闽. Si基外延GaN的结构和力学性能. 材料研究学报[J]. 2007, 21(4): 409-413, http://lib.cqvip.com/Qikan/Article/Detail?id=25257145.
[43] Liu, Zhe, Wang, Xiaoliang, Wang, Junxi, Hu, Guoxin, Guo, Lunchun, Li, Jianping, Li, Jinmin, Zeng, Yiping. Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD. JOURNAL OF CRYSTAL GROWTH[J]. 2007, 298: 281-283, http://dx.doi.org/10.1016/j.jcrysgro.2006.10.028.
[44] Wei Tongbo, Wang Junxi, Li Jinmin, Liu Zhe, Duan Ruifei. Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD. RARE METAL MATERIALS AND ENGINEERING[J]. 2007, 36(3): 416-419, http://ir.semi.ac.cn/handle/172111/9532.
[45] Wei Tongbo, Ma Ping, Duan Ruifei, Wang Junxi, Li Jinmin, Liu Zhe, Lin Guoqiang, Zeng Yiping. Structural and Optical Performance of GaN Thick Film Grown by HVPE. 半导体学报[J]. 2007, 28(1): 19-23, http://ir.semi.ac.cn/handle/172111/16381.
[46] Liu Zhe, Wang XiaoLiang, Wang JunXi, Hu GuoXin, Guo LunChun, Li JinMin. The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates. CHINESE PHYSICS[J]. 2007, 16(5): 1467-1471, http://ir.semi.ac.cn/handle/172111/9458.
[47] 魏同波, 马平, 段瑞飞, 王军喜, 李晋闽, 刘喆, 林郭强, 曾一平. HVPE生长GaN厚膜的结构和光学性能. 半导体学报[J]. 2007, 28(1): 19-23, http://lib.cqvip.com/Qikan/Article/Detail?id=23664009.
[48] 刘喆, 王晓亮, 王军喜, 胡国新, 郭伦春, 李晋闽. The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates. 中国物理：英文版[J]. 2007, 16(5): 1467-1471, http://lib.cqvip.com/Qikan/Article/Detail?id=24376852.
[49] 刘喆, 王军喜, 李晋闽, 刘宏新, 王启元, 王俊, 张南红, 肖红领, 王晓亮, 曾一平. 在复合衬底γ-Al2O3／Si（001）上生长GaN. 半导体学报[J]. 2005, 26(12): 2378-2384, http://lib.cqvip.com/Qikan/Article/Detail?id=20936166.

（1） LED热行为的物理基础，Solid state physics fundamentals of LED thermal behavior，Springer，2013-06，第3作者

   

（1） 高铟组分氮化镓基绿光半导体固态光源外延技术开发，主持，国家级，2014-01--2016-12
（2） 半导体照明高级研修，主持，部委级，2012-06--2013-07
（3） 半导体照明产品检测与质量认证平台建设，主持，国家级，2011-09--2013-09
（4） 高效氮化物LED异质结构设计与量子效率提升研究，参与，国家级，2011-06--2015-07

（1） Morphology evolution of GaN nanorods by selective area growth from randomly distributed openings，2015-08，liuzhe
（2） Research on efficiency improvement of InGaN-based LEDs，2015-06，Zhe Liu
（3） Color Shift of LED，2014-04，zhe liu
（4） Green LEDs ，2013-05，liuzhe

现指导学生

冯梁森  硕士研究生  080501-材料物理与化学  

杨杰  硕士研究生  080501-材料物理与化学