Prof. Dr Honggang Liu

High-Frequency High-Voltage Device and Integrated Circuits R&D Center

Key Laboratory of Microelectronics Devices & Integrated Technology
Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)  


Telephone: +86-10-82995803 
Address: 3 Beitucheng West Road, Chaoyang District, Beijing
Postcode: 100029

Research Areas

Prof. Liu’s current research interests span the areas of emerging semiconductor devices, micro-/nanofabrication, analog and RF/mm-wave IC design. Particular interests include high mobility Ge/III-V CMOS on silicon, 2D materials and transistors, as well as III-V RF devices and circuits.


Ph.D., Microelectronics and Solid-State Circuit (2003)

Institute of Microelectronics, Chinese Academy of Sciences

Dissertation: “Device Modeling, MMIC Design and Fabrication Process of 10 Gbit/s InGaP/GaAs HBT EAM Driver ICs for DWDM Optical Networking”


From 2003 to 2005, he conducted postdoctoral research on mm-wave InP/GaAsSb DHBTs at Simon Fraser University, BC, Canada. In 2006, he joined Swiss Federal Institute of Technology (ETH Zurich), Switzerland, as a research associate responsible for terahertz transistors development and demonstrated 0.3 micron InP/GaAsSb DHBTs with cutoff frequencies above 600 GHz (exceeding 700 GHz at cryogenic temperature) and a BVCEO of 4.2 V simultaneously. In 2008, he worked with University of Toronto/ARISE Tech joint photovoltaic laboratory for high-efficiency Si-based solar cells development. Currently, he is a professor working with Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.



1) Sheng-Kai Wang,Mingmin Cao,Bing Sun,Haiou Li,Honggang Liu,Reducing the Interface Trap Density in Al2O3/InP Stacks by Low Temperature Thermal Process,Applied Physics Express,2015,8:091201

2) Wang, Zhenxing(*),Liang, Shibo,Zhang, Zhiyong,Liu, Honggang,Zhong,Hua,Ye, Lin-Hui,Wang, Sheng,Zhou, Weiwei,Liu, Jie,Chen, Yabin,Zhang,Jin,Peng, Lian-Mao(*),Scalable fabrication of ambipolar transistors and radio-frequency circuits using aligned carbon nanotube arrays.,Advanced Materials,2014,26(4):645-652。

3) Yang Xu,Wang Sheng-Kai,Zhang Xiong,Sun Bing,Zhao Wei,Chang Hu-Dong,Zeng Zhen-Hua,Liu Honggang,Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method,Applied Physics Letters,2014,105(9)

4) S. Huang,Q. Jiang,K. Wei,G. Liu,J. Zhang,X. Wang,Y. Zheng,B. Sun,C. Zhao,H. Liu,Z. Jin,High-Temperature Low-Damage Gate Recess Technique and Ozone-Assisted ALD-grown Al2O3 Gate Dielectric for High-Performance Normally-Off GaN MIS-HEMTs,IEEE International Electron Devices Meeting,442-445,2014.12.15-2014.12.17。

5) Xu, Huilong,Zhang, Zhiyong(*),Shi, Runbo,Liu, Honggang,Wang,Zhenxing,Wang, Sheng,Peng, Lian-Mao,Batch-fabricated high-performance graphene Hall elements,SCIENTIFIC REPORTS,2013,3

6) Wang Sheng Kai,Liu Hong-Gang,Toriumi Akira,Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy,Applied Physics Letters,2012,101(6)

7) Guo Hao,Zhang Xiong,Chen Hongjun,Liu Honggang,Zhang Peiyuan,Liao Qinghua,Hu Shujuan,Chang Hudong,Sun Bing,Wang Shengkai,Cui Yiping,High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer,Applied Physics Express,2013,6(7)

8) Chen Hongjun,Guo Hao,Zhang Peiyuan,Zhang Xiong,Liu Honggang,Wang Shengkai,Cui Yiping,Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3 Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate,Applied Physics Express,2013,6(2)

9) H.G. Liu, H. D. Chang, B. Sun, “Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures”, IEEE Transaction on Electron Devices, 58(2), 2011, pp. 576.

10) H.G. Liu, O. Ostinelli, Y.P. Zeng and C.R. Bolognesi, “Emitter Size Effect and Ultimate Scalability in InP:GaInP/GaAsSb/InP DHBTs”, IEEE Electron Device Letters, 29(6), 2008, pp. 546-548.

11) H.G. Liu, Y.P. Zeng, O. Ostinelli and C.R. Bolognesi, “600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT× BVCEO > 2.5 THz-V at Room Temperature”, IEEE International Electron Devices Meeting (IEDM), 2007, pp. 667-670, Washington DC, USA.

12) H.G. Liu, O. Ostinelli, Y.P. Zeng and C.R. Bolognesi, “High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs with fT = 436 GHz”, IEEE Electron Device Letters, 28(10), 2007, pp. 852-855.

13) H.G. Liu, O. Ostinelli, Y.P. Zeng and C.R. Bolognesi, “High Gain Arsenic-Rich n-p-n InP/GaAsSb DHBTs with fT > 420 GHz”, IEEE Transactions on Electron Devices, 54(10), 2007, pp. 2792-2795.

14) H.G. Liu, S.P. Watkins and C.R. Bolognesi, “Type-II InP/GaAsSb DHBTs with 15 nm Base and 384 GHz fT and 6-V BVCEO”, IEEE Transactions on Electron Devices, 53(3), 2006, pp. 559-561.

15) C.R. Bolognesi, H.G. Liu, N.G. Tao, L. Zheng, X. Zhang, S.P. Watkins, “The InP/GaAsSb type-II heterostructure system and its application to high-speed DHBTs and photodetectors: physics, surprises, and opportunities”, IEEE International Electron Devices Meeting (IEDM), 2005, Digest pp. 779-782.

16) C.R. Bolognesi, H.G. Liu, N. Tao, X. Zhang, S. Bagheri-Najimi and S.P. Watkins, "Neutral base recombination in InP/GaAsSb/InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers,"Applied Physics Letters, vol. 86, 2005, pp. 253506-1-3.

17) Nick G.M. Tao, H.G. Liu, C.R. Bolognesi, "Surface Recombination Currents in "Type-II" NpN InP-GaAsSb-InP Self-Aligned DHBTs", IEEE Transactions on Electron Devices, 52(6), 2005, pp. 1061-1066.

18) H.G. Liu, N. Tao, S.P. Watkins, C.R. Bolognesi, "Extraction of the average collector velocity in high-speed “Type-II” InP-GaAsSb-InP DHBTs", IEEE Electron Device Letters, 25(12), 2004, pp. 769-771.

19) H.G. Liu, J.Q. Wu, N. Tao, A.V. Firth, T.W. MacElwee, C.R. Bolognesi, "High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3", Journal of Crystal Growth, 267, 2004, pp. 592-597.