基本信息
陈思铭  男  博导  中国科学院半导体研究所
电子邮件: smchen@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号1号楼616室
邮政编码:

招生信息

   
招生专业
0805Z2-半导体材料与器件
招生方向
硅基III-V族异质集成
量子点光源及光放大器件

教育背景

2010-03--2014-04   谢菲尔德大学   博士
2008-08--2009-11   谢菲尔德大学   硕士
2004-08--2008-07   长春理工大学   学士

工作经历

   
工作简历
2023-03~现在, 中科院半导体所, 研究员
2019-06~2022-12,伦敦大学学院, 助理教授
2017-09~2022-08,伦敦大学学院, 皇家工程院研究员
2013-09~2017-08,伦敦大学学院, 博士后
2010-03~2014-04,谢菲尔德大学, 博士
2008-08~2009-11,谢菲尔德大学, 硕士
2004-08~2008-07,长春理工大学, 学士

专利与奖励

   
专利成果
( 1 ) AN OPTOELECTRONIC SEMICONDUCTOR DEVICE, 2022, 专利号: US20220255297A1

出版信息

   
发表论文
(1) Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration, JOURNAL OF LUMINESCENCE, 2023, 第 9 作者
(2) Distortion-free amplification of 100���GHz mode-locked optical frequency comb using quantum dot technology, Optics Express, 2023, 第 11 作者
(3) Monolithically integrated photonic crystal surface emitters on silicon with a vortex beam by using bound states in the continuum, Optics Letters, 2023, 第 9 作者
(4) Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate, Applied Physics Letters, 2023, 第 11 作者
(5) From past to future: on-chip laser sources for photonic integrated circuits, LIGHT: SCIENCE & APPLICATIONS, 2023, 第 3 作者
(6) The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 第 13 作者
(7) The role of different types of dopants in 1.3 mu m InAs/GaAs quantum-dot lasers, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 第 12 作者
(8) Single-Mode Photonic Crystal Nanobeam Lasers Monolithically Grown on Si for Dense Integration, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2022, 第 9 作者
(9) Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform, FRONTIERS IN PHYSICS, 2022, 第 11 作者
(10) Analysis of the regimes of feedback effects in quantum dot laser, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 第 11 作者
(11) Theoretical analysis and modelling of degradation for III-V lasers on Si, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 第 8 作者
(12) Multi-wavelength 128 Gbit s(-1) lambda (-1) PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 第 11 作者
(13) Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates, Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates, CHINESE OPTICS LETTERS, 2022, 第 8 作者
(14) Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates, NANOSCALE, 2022, 第 10 作者
(15) Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon, ACS PHOTONICS, 2022, 第 11 作者
(16) All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 15 作者
(17) Optoelectronic oscillator for 5G wireless networks and beyond, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 7 作者
(18) Heteroepitaxial Growth of III-V Semiconductors on Silicon, CRYSTALS, 2020, 第 3 作者
(19) Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001), NATURE COMMUNICATIONS, 2020, 第 11 作者
(20) Inversion Boundary Annihilation in GaAs Monolithically Grown on On���Axis Silicon (001), ADVANCED OPTICAL MATERIALS, 2020, 第 19 作者
(21) InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods, MATERIALS, 2020, 第 6 作者
(22) Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon, OPTICS LETTERS, 2020, 第 11 作者
(23) Origin of Defect Tolerance in InAs & x002F;GaAs Quantum Dot Lasers Grown on Silicon, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2020, 第 4 作者
(24) Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20��C and 120��C, PHOTONICS RESEARCH, 2020, 第 17 作者
(25) Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2020, 第 4 作者
(26) Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2020, 第 4 作者
(27) Impact of ex-situ annealing on strain and composition of MBE grown GeSn, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 第 8 作者
(28) The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si, JOURNAL OF APPLIED PHYSICS, 2019, 
(29) Integration of III-V lasers on Si for Si photonics, PROGRESS IN QUANTUM ELECTRONICS, 2019, 第 4 作者
(30) O-band InAs/GaAs quantum dot laser monolithically integrated on exact (001) Si substrate, JOURNAL OF CRYSTAL GROWTH, 2019, 第 0 作者
(31) Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants, MATERIALS RESEARCH EXPRESS, 2019, 
(32) Understanding the Bandwidth Limitations in Monolithic 1.3 mu m InAs/GaAs Quantum Dot Lasers on Silicon, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2019, 第 4 作者
(33) Ultra-low threshold InAs/GaAs quantum dot microdisk lasers on planar on-axis Si (001) substrates, OPTICA, 2019, 第 12 作者
(34) III-V Quantum Dot Lasers Monolithically Grown on Silicon, 2019 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2019, 第 8 作者
(35) Recent progress in epitaxial growth of III-V quantum-dot lasers on silicon substrate, JOURNAL OF SEMICONDUCTORS, 2019, 第 11 作者
(36) Selective area intermixing of III-V quantum-dot lasers grown on silicon with two wavelength lasing emissions, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 第 11 作者
(37) Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon, JOURNAL OF APPLIED PHYSICS, 2018, 
(38) Low-noise 1.3 mu m InAs/GaAs quantum dot laser monolithically grown on silicon, PHOTONICS RESEARCH, 2018, 第 11 作者
(39) Elevated temperature lasing from injection microdisk lasers on silicon, LASER PHYSICS LETTERS, 2018, 
(40) Optimization of 1.3 mu m InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account, LASER PHYSICS, 2018, 第 6 作者
(41) InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform, 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018, 第 5 作者
(42) Gain Switching of Monolithic 1.3 mu m InAs/GaAs Quantum Dot Lasers on Silicon, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2018, 第 3 作者
(43) Monolithic quantum-dot distributed feedback laser array on silicon, OPTICA, 2018, 第 11 作者
(44) Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 第 4 作者
(45) III-V quantum-dot lasers monolithically grown on silicon, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 第 11 作者
(46) Electrically pumped continuous-wave 1.3 mu m InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates, OPTICS EXPRESS, 2017, 第 11 作者
(47) Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2017, 第 2 作者
(48) Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 mu m, OPTICS LETTERS, 2017, 第 13 作者
(49) Metamorphic III-V semiconductor lasers grown on silicon, MRS BULLETIN, 2016, 第 11 作者
(50) Electrically Pumped Continuous-Wave III-V Quantum Dot Lasers Monolithically Grown On Silicon, 2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2016, 第 11 作者
(51) Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates, ACS PHOTONICS, 2016, 第 3 作者
(52) In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates, OPTICS EXPRESS, 2016, 第 6 作者
(53) Optimizations of Defect Filter Layers for 1.3-mu m InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2016, 第 2 作者
(54) Silicon-based III-V quantum-dot lasers for silicon photonics, 2016 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2016, 第 2 作者
(55) Electrically pumped continuous-wave III-V quantum dot lasers on silicon, NATURE PHOTONICS, 2016, 第 11 作者
(56) Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications, ENERGY PROCEDIA, 2016, 
(57) GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures, NANOSCALE RESEARCH LETTERS, 2015, 第 11 作者
(58) Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications, QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS CHARACTERIZATION AND MODELING XII, 2015, 第 3 作者
(59) Optimisation of the dislocation filter layers in 1.3-mu m InAs/GaAs quantum-dot lasers monolithically grown on Si substrates, IET OPTOELECTRONICS, 2015, 第 3 作者
(60) Quantum dot optoelectronic devices: lasers, photodetectors and solar cells, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 第 2 作者
(61) Monolithically Grown Superluminescent Diodes on Germanium and Silicon substrates, 2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2015, 第 2 作者
(62) Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate, PHOTONICS, 2015, 第 1 作者
(63) InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate, OPTICS EXPRESS, 2014, 第 3 作者
(64) InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate, ACS PHOTONICS, 2014, 第 11 作者
(65) 1.3-mu m InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers, OPTICS EXPRESS, 2014, 第 11 作者
(66) Hybrid Quantum Well/Quantum Dot Structure for Broad Spectral Bandwidth Emitters, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 第 11 作者
(67) Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser, ELECTRONICS LETTERS, 2012, 
(68) Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure, APPLIED PHYSICS LETTERS, 2012, 
(69) Quantum dot selective area intermixing for broadband light sources, OPTICS EXPRESS, 2012, 
(70) Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 第 4 作者

科研活动

   
科研项目
( 1 ) CMOS兼容的硅基量子点激光器及光子集成, 负责人, 国家任务, 2023-05--2026-12