电子邮件： linlin@ime.ac.cn
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研究领域
现阶段主要工作基于超高精度真空传感器的研发，主要涵盖：
1. 传感器所需特种合金材料研发；
2. 极限尺寸合金零部件制备工艺研发；
3. 合金材料抗腐蚀、高温阻氢特性的研究；
4. 极限尺寸零部件微观力学性能研究；
5. 传感器及微小信号电路匹配；
6. 传感器真空测量及标定
及相关领域的研发工作
招生信息
招生专业
招生方向
教育背景
工作经历
工作简历
社会兼职
专利与奖励
奖励信息
专利成果
出版信息
1. Z.Ji, J.F.Zhang, W.Zhang, L.Lin, J.G.Ma, M.Duan, B.Kaczer, J.Franco, S.De Gendt and G.Groeseneken
“Predicting slow AC NBTI-aging under low operation bias by As-grown-Generation (A-G) model”
2014 International Electron Devices Meeting (IEDM) submitted.
2. L. Lin, Z. Ji, J. F. Zhang and W. D. Zhang
“Development of a fast technique for characterizing interface states”
ECS transactions on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11, Vol. 35, No.4, pp.81-93, 2011.
2. L. Lin, Z. Ji, J. F. Zhang, W. D. Zhang, B. Kaczer, S. De Gendt, and G. Groeseneken
“A single pulse charge pumping technique for fast measurements of interface states”
IEEE Trans. Electron Dev., vol. 58, No.5, pp. 1490-1498, 2011.
3. J. F. Zhang, Z. Ji, L. Lin, and W. Zhang (Invited)
“Effective threshold voltage shift: a measure for NBTI removing uncertainty in mobility Degradation”
Proc. of IEEE 10th International Conference on Solid-State and Integrated-Circuit Technology, pp.1600-1603, 2010.
4. Z. Ji, L. Lin, J. F. Zhang, B. Kaczer, and G. Groeseneken
“NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse
measurement”
IEEE Trans. Electron Dev., vol. 57, No.1, pp. 228-237, 2010.
5. Z. Ji, L. Lin and J. Zhang
“Impact of sensing gate bias on NBTI of Hf-based dielectric stacks”
ECS transactions on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10, Vol. 19, No.2, pp.351-362, 2009.
6. J. F. Zhang, M. H. Chang, Z. Ji, L. Lin, I. Ferain, G. Groeseneken, L. Pantisano, S. De Gendt, and M. M. Heyns
“Dominant layer for stress-induced positive charges in Hf-based gate stacks”
IEEE Electron Device Letters, vol. 29, pp.1360-1363, 2008.
7. J. F. Zhang, Z. Ji, W. Zhang, L. Lin, B. Kaczer, S. De Gendt, and G. Groeseneken (Invited)
“Advanced characterization techniques for MOS devices”
China Semiconductor Technology International Conference (CSTIC), 2012.