基本信息
蒋其梦 男 硕导 中国科学院微电子研究所
电子邮件: jiangqimeng@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号中科院微电子所
邮政编码:
电子邮件: jiangqimeng@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号中科院微电子所
邮政编码:
招生信息
招生专业
080903-微电子学与固体电子学
招生方向
功率半导体器件,功率集成电路
教育背景
2010-09--2015-06 香港科技大学 哲学博士2007-09--2010-06 电子科技大学 工学硕士2003-09--2007-07 电子科技大学 工学学士
工作经历
工作简历
2015-01~2021-02,华为技术有限公司, 主任工程师
专利与奖励
奖励信息
(1) 中国电子学会科学技术奖, 二等奖, 其他, 2022
出版信息
发表论文
(1) Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition, APPLIED SURFACE SCIENCE, 2023, 第 4 作者(2) Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures, MICROELECTRONIC ENGINEERING, 2023, 通讯作者(3) Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier, ELECTRONICS, 2022, 第 4 作者(4) An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage, IEEE ELECTRON DEVICE LETTERS, 2022, 通讯作者(5) Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs, Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs, 半导体学报:英文版, 2022, 通讯作者(6) Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiNx Passivation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 第 4 作者(7) Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy, IEEE ELECTRON DEVICE LETTERS, 2022, 第 3 作者(8) Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy, APPLIED PHYSICS LETTERS, 2021, 通讯作者(9) Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess, Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess, 半导体学报:英文版, 2021, 第 4 作者(10) Impact of Vth Insability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC, IEEE ELECTRON DEVICE LETTERS, 2021, 通讯作者(11) A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 通讯作者(12) Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 通讯作者(13) 1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform, IEEE ELECTRON DEVICE LETTERS, 2013, 通讯作者(14) Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices, IEEE ELECTRON DEVICE LETTERS, 2012, 第 2 作者(15) Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film, IEEE ELECTRON DEVICE LETTERS, 2012, 第 2 作者(16) A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 通讯作者
科研活动
科研项目
( 1 ) 超薄势垒Si基GaN增强型器件与单片集成技术, 负责人, 地方任务, 2021-08--2023-08