基本信息
邓震 男 博导 中国科学院物理研究所
电子邮件： zhen.deng@iphy.ac.cn
通信地址： 北京市海淀区中关村南三街8号
邮政编码：100190
研究领域
主要研究方向侧重于半导体方向的应用基础研究及应用研究：III-V族材料的外延生长及其光电器件研究，III-Nitrides的MOCVD生长及其器件研究，其他新型光电器件的研究。其中外延生长主要涉及到MOCVD及MBE等大型设备；器件制作主要涉及到微纳加工设备及工艺。
招生信息
已协助培养毕业博士生3名，每年拟招收1-2名硕博连读生。博士研究生的选题主要偏重于半导体方向的应用基础研究及应用研究。同时欢迎有相关研究背景的博士毕业生来组做博士后！！！学生就业前景较好！！！
招生专业
070205-凝聚态物理
招生方向
化合物半导体材料外延生长及器件制作
教育背景
2009-09--2014-07 中国科学院物理研究所 博士学位
2005-09--2009-07 北京交通大学 理学学士
2005-09--2009-07 北京交通大学 理学学士
工作经历
工作简历
2018-08~现在, 中国科学院物理研究所, 副研究员
2016-03~2018-05,耶鲁大学, 博士后
2014-07~2016-03,中国科学院微电子研究所, 助理研究员
2016-03~2018-05,耶鲁大学, 博士后
2014-07~2016-03,中国科学院微电子研究所, 助理研究员
专利与奖励
专利成果
[1] 陈弘, 雷宇, 贾海强, 邓震, 杜春花, 李云. 一种CMOS图像传感器的光电二极管及光电二极管单元. CN: CN118016749A, 2024-05-10.
[2] 贾海强, 李炫璋, 邓震, 王文新, 陈弘. 一种可见-近红外宽光谱光电探测器及其制备方法. CN: CN115706184A, 2023-02-17.
[3] 陈弘, 李欣欣, 邓震, 贾海强, 王文新. 硅基肖特基光电探测器、及其制备方法和应用. CN: CN114497266A, 2022-05-13.
[4] 陈弘, 李欣欣, 邓震, 贾海强, 王文新. 硅基肖特基光电探测器、及其制备方法和应用. CN: CN114497266A, 2022-05-13.
[5] 陈弘, 李欣欣, 邓震, 贾海强, 王文新. 硅基肖特基光电探测器、及其制备方法和应用. CN: CN114497266A, 2022-05-13.
[6] 陈弘, 王森, 邓震, 贾海强, 王文新, 李欣欣. GeSi合金基板的制备方法及其产品和应用. CN: CN113529159A, 2021-10-22.
[7] 陈弘, 徐然, 邓震, 贾海强, 王文新, 王森, 李欣欣. 外延GeSi量子点的方法. CN: CN111834206A, 2020-10-27.
[2] 贾海强, 李炫璋, 邓震, 王文新, 陈弘. 一种可见-近红外宽光谱光电探测器及其制备方法. CN: CN115706184A, 2023-02-17.
[3] 陈弘, 李欣欣, 邓震, 贾海强, 王文新. 硅基肖特基光电探测器、及其制备方法和应用. CN: CN114497266A, 2022-05-13.
[4] 陈弘, 李欣欣, 邓震, 贾海强, 王文新. 硅基肖特基光电探测器、及其制备方法和应用. CN: CN114497266A, 2022-05-13.
[5] 陈弘, 李欣欣, 邓震, 贾海强, 王文新. 硅基肖特基光电探测器、及其制备方法和应用. CN: CN114497266A, 2022-05-13.
[6] 陈弘, 王森, 邓震, 贾海强, 王文新, 李欣欣. GeSi合金基板的制备方法及其产品和应用. CN: CN113529159A, 2021-10-22.
[7] 陈弘, 徐然, 邓震, 贾海强, 王文新, 王森, 李欣欣. 外延GeSi量子点的方法. CN: CN111834206A, 2020-10-27.
出版信息
发表论文
[1] Tian, Yuan, Yang, Dong, Ma, Yu, Li, Zhongwen, Li, Jun, Deng, Zhen, Tian, Huanfang, Yang, Huaixin, Sun, Shuaishuai, Li, Jianqi. Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy. NANOMATERIALS[J]. 2024, 第 6 作者14(3): http://dx.doi.org/10.3390/nano14030310.
[2] 陈弘. Quantum confinement of carriers in the type-I quantum wells structure. 中国物理B[J]. 2024, null(null):
[3] ZhaoleSu, YangfengLi, XiaotaoHu, YimengSong, ZhenDeng, ZiguangMa, ChunhuaDu, WenxinWang, HaiqiangJia, YangJiang, HongChen. Relation of V/III ratio of AlN interlayer with the polarity of nitride. Chinese Physics B[J]. 2024, 第 5 作者33(11): 117801-117801, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ad71b2.
[4] 孟凡龙, 邓震. Design of a polarization-insensitive broadband achromatic metalens for mid-wave infrared detector. Optics Letters[J]. 2024, 第 2 作者 通讯作者 null(null):
[5] 李欣欣, 邓震, 江洋, 杜春花, 贾海强, 王文新, 陈弘. Reanalysis of energy band structure in the type-II quantum wells. CHINESE PHYSICS B[J]. 2024, 第 2 作者33(6): 75-78, http://lib.cqvip.com/Qikan/Article/Detail?id=7112342422.
[6] Linsheng Liu, Zhen Deng, Guipeng Liu, Chongtao Kong, Hao Du, Ruolin Chen, Jianfeng Yan, Le Qin, Shuxiang Song, Xinhui Zhang, Wenxin Wang. Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)4(GaAs)3/Be-Doped InAlAs Quantum Wells for THz Applications. Crystals[J]. 2024, 第 2 作者14(5): 421,
[7] Hao, Bin, Song, Yimeng, Jiang, Conghui, Han, Jiufang, Jiang, Yang, Deng, Zhen, Wang, Wenxin, Jia, Haiqiang, Chen, Hong, Du, Chunhua. Comparing single-, double- and triple-layer anti-reflection coatings for ultra-low reflectance in silicon heterojunction solar cells. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2023, 第 6 作者62(6): http://dx.doi.org/10.35848/1347-4065/acd7b7.
[8] Zhang Junyang, Gao Zhendong, Wang Miao, Ding Guojian, Du chunhua, Jiang Yang, Jia Haiqiang, Wang Wenxin, Chen Hong, Deng Zhen. Opto-electrical and polarization performance of a mesa-structured InGaAs PIN detector integrated with subwavelength aluminum gratings. Optics Letters[J]. 2022, 第 10 作者 通讯作者
[9] Tang, Xiansheng, Wang, Lu, Zhao, Minglong, Huo, Wenxue, Han, Lili, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Du, Chunhua, Jia, Haiqiang. Enhancement of light extraction efficiency of AlGaInP-based light emitting diodes by silicon oxide hemisphere array. OPTICS COMMUNICATIONS[J]. 2021, 第 6 作者481: http://dx.doi.org/10.1016/j.optcom.2020.126539.
[10] Tang, Xiansheng, Ma, Ziguang, Han, Lili, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Du, Chunhua, Jia, Haiqiang. Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes. VACUUM[J]. 2021, 第 4 作者187: http://dx.doi.org/10.1016/j.vacuum.2021.110160.
[11] Tang, Xiansheng, Han, Lili, Ma, Ziguang, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Du, Chunhua, Jia, Haiqiang. Enhanced light extraction from AlGaInP-based red light- emitting diodes with photonic crystals. OPTICS EXPRESS[J]. 2021, 第 4 作者29(4): 5993-5999, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000619209800108.
[12] 岳琛, 杨浩军, 吴海燕, 李阳锋, 孙令, 邓震, 杜春花, 江洋, 马紫光, 王文新, 贾海强, 陈弘. 量子阱带间跃迁探测器基础研究（特邀）. 红外与激光工程[J]. 2021, 第 6 作者50(1): 60-65, https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFDAUTO&filename=HWYJ202101008&v=MDAwNDFyQ1VSN3VmWWVSdkZDcmhXNzdLTFRyU1pMRzRITkRNcm85RmJJUjhlWDFMdXhZUzdEaDFUM3FUcldNMUY=.
[13] XianshengTang, BaoanSun, ChenYue, XinxinLi, JunyangZhang, ZhenDeng, ChunhuaDu, WenxinWang, HaiqiangJia, YangJiang, WeihuaWang, HongChen. Origin of anomalous enhancement of the absorption coefficient in a PN junction. Chinese Physics B[J]. 2021, 第 6 作者30(9): 97804-097804, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ac0791.
[14] Li, Yangfeng, Yan, Shen, Hu, Xiaotao, Song, Yimeng, Deng, Zhen, Du, Chunhua, Wang, Wenqi, Ma, Ziguang, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Jiang, Yang, Chen, Hong. Effect of H-2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes. SUPERLATTICES AND MICROSTRUCTURES[J]. 2020, 第 5 作者145: http://dx.doi.org/10.1016/j.spmi.2020.106606.
[15] Han, Lili, Zhao, Minglong, Tang, Xiansheng, Huo, Wenxue, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Du, Chunhua, Jia, Haiqiang. Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p-n junction engineering. JOURNAL OF APPLIED PHYSICS[J]. 2020, 第 5 作者127(8):
[16] Wang, Sen, Deng, Zhen, Li, Xinxin, Li, Jun, Li, Yangfeng, Xu, Ran, Jiang, Yang, Ma, Ziguang, Wang, Lu, Du, Chunhua, Jia, Haiqiang, Wang, Wenxin, Chen, Hong. Fabrication, structural and optical properties of a virtual GeSi template by Ge filling the porous Si prepared by EC etching. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 第 2 作者 通讯作者 59(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000529888700001.
[17] Wang, Ying, Duan, Li, Deng, Zhen, Liao, Jianhui. Electrically Transduced Gas Sensors Based on Semiconducting Metal Oxide Nanowires. SENSORS[J]. 2020, 第 3 作者 通讯作者 20(23): https://doaj.org/article/775a2a7b7a9a418ea919ab2811c84766.
[18] Tang, Xiansheng, Li, Xinxin, Yue, Chen, Wang, Lu, Deng, Zhen, Jia, Haiqiang, Wang, Wenxin, Ji, Anchun, Jiang, Yang, Chen, Hong. Research on photo-generated carriers escape in PIN and NIN structures with quantum wells. APPLIEDPHYSICSEXPRESS[J]. 2020, 第 5 作者13(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000548346800001.
[19] Li, Yangfeng, Yan, Shen, Junhui, Die, Hu, Xiaotao, Song, Yimeng, Deng, Zhen, Du, Chunhua, Wang, Wenqi, Ma, Ziguang, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Jiang, Yang, Chen, Hong. The influence of excessive H-2 during barrier growth on InGaN light-emitting diodes. MATERIALS RESEARCH EXPRESS[J]. 2020, 第 6 作者7(10): http://dx.doi.org/10.1088/2053-1591/abc18f.
[20] Li, Xinxin, Deng, Zhen, Li, Jun, Li, Yangfeng, Guo, Linbao, Jiang, Yang, Ma, Ziguang, Wang, Lu, Du, Chunhua, Wang, Ying, Meng, Qingbo, Jia, Haiqiang, Wang, Wenxin, Liu, Wuming, Chen, Hong. Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current. PHOTONICS RESEARCH[J]. 2020, 第 2 作者8(11): 1662-1670, http://lib.cqvip.com/Qikan/Article/Detail?id=7103604158.
[21] Li, Yangfeng, Yan, Shen, Hu, Xiaotao, Song, Yimeng, Deng, Zhen, Du, Chunhua, Wang, Wenqi, Ma, Ziguang, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Jiang, Yang, Chen, Hong. Characterization of edge dislocation density through X-ray diffraction rocking curves. JOURNAL OF CRYSTAL GROWTH[J]. 2020, 第 5 作者551: http://dx.doi.org/10.1016/j.jcrysgro.2020.125893.
[22] Han, Lili, Zhao, Minglong, Tang, Xiansheng, Huo, Wenxue, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Du, Chunhua, Jia, Haiqiang. Electro-photoluminescence study in InGaAs/AlGaAs multi-quantum-wells. EPL[J]. 2020, 第 5 作者132(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000614623600002.
[23] WenXueHuo, MingLongZhao, XianShengTang, LiLiHan, ZhenDeng, YangJiang, WenXinWang, HongChen, ChunHuaDu, HaiQiangJia. Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters. Chinese Physics Letters[J]. 2020, 第 5 作者37(8): 87802-166, https://cpl.iphy.ac.cn/10.1088/0256-307X/37/8/087802.
[24] ShenYan, XiaoTaoHu, JunHuiDie, CaiWeiWang, WeiHu, WenLiangWang, ZiGuangMa, ZhenDeng, ChunHuaDu, LuWang, HaiQiangJia, WenXinWang, YangJiang, GuoqiangLi, HongChen. Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer. Chinese Physics Letters[J]. 2020, 第 8 作者37(3): 38102-72, https://cpl.iphy.ac.cn/10.1088/0256-307X/37/3/038102.
[25] MinglongZhao, XianshengTang, WenxueHuo, LiliHan, ZhenDeng, YangJiang, WenxinWang, HongChen, ChunhuaDu, HaiqiangJia. Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate. Chinese Physics B[J]. 2020, 第 5 作者29(4): 48104-048104, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ab7d9c.
[26] Huo, Wenxue, Zhao, Minglong, Tang, Xiansheng, Han, Lili, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Du, Chunhua, Jia, Haiqiang. Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch conditions. APPLIED PHYSICS EXPRESS[J]. 2019, 第 5 作者12(11):
[27] Die, Junhui, Wang, Caiwei, Yan, Shen, Hu, Xiaotao, Hu, Wei, Ma, Ziguang, Deng, Zhen, Du, Chunhua, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Jiang, Yang, Chen, Hong. Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate. APPLIED PHYSICS EXPRESS[J]. 2019, 第 7 作者12(1):
[28] Hu, Wei, Die, Junhui, Wang, Caiwei, Yan, Shen, Hu, Xiaotao, Du, Chunhua, Jiang, Yang, Deng, Zhen, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Ma, Ziguang, Chen, Hong. The substantial dislocation reduction by preferentially passivating etched defect pits in GaN epitaxial growth. APPLIED PHYSICS EXPRESS[J]. 2019, 第 8 作者12(3): http://www.corc.org.cn/handle/1471x/2373985.
[29] Wang, Caiwei, Jiang, Yang, Die, Junhui, Yan, Shen, Hu, Xiaotao, Hu, Wei, Ma, Ziguang, Deng, Zhen, Jia, Haiqiang, Chen, Hong. Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates. CRYSTENGCOMM[J]. 2019, 第 8 作者21(17): 2747-2753,
[30] Li, Yangfeng, Deng, Zhen, Ma, Ziguang, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Jiang, Yang, Chen, Hong. Visualizing carrier transitions between localization states in a InGaN yellow-green light-emitting-diode structure. JOURNAL OF APPLIED PHYSICS[J]. 2019, 第 2 作者126(9):
[31] Die, Junhui, Wang, Caiwei, Yan, Shen, Hu, Xiaotao, Hu, Wei, Ma, Ziguang, Deng, Zhen, Du, Chunhua, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Jiang, Yang, Chen, Hong. Characterization and optimization of AlN nucleation layer for nonpolar a-plane GaN grown on r-plane sapphire substrate. SUPERLATTICES AND MICROSTRUCTURES[J]. 2019, 第 7 作者130: 215-220, http://dx.doi.org/10.1016/j.spmi.2019.04.031.
[32] GenYue, ZhenDeng, SenWang, RanXu, XinxinLi, ZiguangMa, ChunhuaDu, LuWang, YangJiang, HaiqiangJia, WenxinWang, HongChen. Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction. Chinese Physics Letters[J]. 2019, 第 2 作者36(5): 57201, https://cpl.iphy.ac.cn/10.1088/0256-307X/36/5/057201.
[33] Li, Yangfeng, Die, Junhui, Yan, Shen, Deng, Zhen, Ma, Ziguang, Wang, Lu, Jia, Haidiang, Wang, Wenxin, Jian, Yang, Chen, Hong. Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction. APPLIED PHYSICS EXPRESS[J]. 2019, 第 4 作者12(4): http://www.corc.org.cn/handle/1471x/2373981.
[34] Xu, Ran, Deng, Zhen, Yue, Yin, Wang, Sen, Li, Xinxin, Ma, Ziguang, Jiang, Yang, Wang, Lu, Du, Chunhua, Jia, Haiqiang, Wang, Wenxin, Chen, Hong. Fabrication of large-scale uniform submicron inverted pyramid pit arrays on silicon substrates by laser interference lithography. VACUUM[J]. 2019, 第 2 作者 通讯作者 165: 1-6, http://dx.doi.org/10.1016/j.vacuum.2019.03.042.
[35] Chang, Yunjie, Wang, Yumei, Deng, Zhen, Chen, Hong, Ge, Binghui. Investigations of atomic configurations of 60 degrees basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy. PHILOSOPHICAL MAGAZINE LETTERS[J]. 2016, 第 3 作者96(4): 148-156, https://www.webofscience.com/wos/woscc/full-record/WOS:000379758900004.
[36] Deng, Zhen, Li, Zishen, Jiang, Yang, Ma, Ziguang, Fang, Yutao, Li, Yangfeng, Wang, Wenxin, Jia, Haiqiang, Chen, Hong. Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2015, 第 1 作者119(4): 1209-1213, http://ir.iphy.ac.cn/handle/311004/60254.
[37] Fang, Yutao, Wang, Lu, Sun, Qingling, Lu, Taiping, Deng, Zhen, Ma, Ziguang, Jiang, Yang, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Chen, Hong. Investigation of temperature-dependent photoluminescence in multi-quantum wells. SCIENTIFIC REPORTS[J]. 2015, 第 5 作者5: http://dx.doi.org/10.1038/srep12718.
[38] Chen, Fangsheng, Chen, Hong, Deng, Zhen, Lu, Taiping, Fang, Yutao, Jiang, Yang, Ma, Ziguang, He, Miao. A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2015, 第 3 作者118(4): 1453-1457, http://ir.iphy.ac.cn/handle/311004/60253.
[39] Jiang, Yang, Li, Yangfeng, Li, Yueqiao, Deng, Zhen, Lu, Taiping, Ma, Ziguang, Zuo, Peng, Dai, Longgui, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Liu, Wuming, Chen, Hong. Realization of high-luminous-efficiency InGaN light-emitting diodes in the "green gap" range. SCIENTIFIC REPORTS[J]. 2015, 第 4 作者5: http://www.corc.org.cn/handle/1471x/2373575.
[40] Deng, Zhen, Jiang, Yang, Zuo, Peng, Fang, Yutao, Ma, Ziguang, Jia, Haiqiang, Zhou, Junming, Chen, Hong. Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2014, 第 1 作者211(5): 1175-1178, http://ir.iphy.ac.cn/handle/311004/59445.
[41] Deng, Zhen, Jiang, Yang, Wang, Wenxin, Cheng, Liwen, Li, Wei, Lu, Wei, Jia, Haiqiang, Liu, Wuming, Zhou, Junming, Chen, Hong. Indium segregation measured in InGaN quantum well layer. SCIENTIFIC REPORTS[J]. 2014, 第 1 作者4: http://dx.doi.org/10.1038/srep06734.
[42] DINGLiZhen, CHENHong, HEMiao, JIANGYang, LUTaiPing, DENGZhen, CHENFangSheng, YANGFan, YANGQi, ZHANGYuLi. Improved Photoluminescence in InGaN/GaN Strained Quantum Wells. Chinese Physics Letters[J]. 2014, 第 6 作者31(7): 76101-076101, https://cpl.iphy.ac.cn/10.1088/0256-307X/31/7/076101.
[43] FANGYuTao, JIANGYang, DENGZhen, ZUOPeng, CHENHong. GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer. Chinese Physics Letters[J]. 2014, 第 3 作者31(2): 28101-028101, https://cpl.iphy.ac.cn/10.1088/0256-307X/31/2/028101.
[44] XUPeiQiang, JIANGYang, MAZiGuang, DENGZhen, LUTaiPing, DUChunHua, FANGYuTao, ZUOPeng, CHENHong. The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD. Chinese Physics Letters[J]. 2013, 第 4 作者30(2): 28101-028101, https://cpl.iphy.ac.cn/10.1088/0256-307X/30/2/028101.
[45] Peiqiang Xu, Yang Jiang, Yao Chen, Ziguang Ma, Xiaoli Wang, Zhen Deng, Yan Li, Haiqiang Jia, Wenxin Wang, Hong Chen. Analyses of 2-DEG characteristics in GaN HEMT with AlN. NANOSCALE RESEARCH LETTERS. 2012, 第 6 作者7(1): 141-141, http://dx.doi.org/10.1186/1556-276X-7-141.
[46] Xu, Peiqiang, Jiang, Yang, Chen, Yao, Ma, Ziguang, Wang, Xiaoli, Deng, Zhen, Li, Yan, Jia, Haiqiang, Wang, Wenxin, Chen, Hong. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD. NANOSCALE RESEARCH LETTERS[J]. 2012, 第 6 作者7: http://dx.doi.org/10.1186/1556-276X-7-141.
[2] 陈弘. Quantum confinement of carriers in the type-I quantum wells structure. 中国物理B[J]. 2024, null(null):
[3] ZhaoleSu, YangfengLi, XiaotaoHu, YimengSong, ZhenDeng, ZiguangMa, ChunhuaDu, WenxinWang, HaiqiangJia, YangJiang, HongChen. Relation of V/III ratio of AlN interlayer with the polarity of nitride. Chinese Physics B[J]. 2024, 第 5 作者33(11): 117801-117801, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ad71b2.
[4] 孟凡龙, 邓震. Design of a polarization-insensitive broadband achromatic metalens for mid-wave infrared detector. Optics Letters[J]. 2024, 第 2 作者 通讯作者 null(null):
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科研活动
科研项目
（ 1 ） 垂直结构GaN晶体管再生长界面调控及其物理特性研究, 负责人, 国家任务, 2021-01--2023-12
（ 2 ） 中国科学院青年创新促进会, 负责人, 中国科学院计划, 2021-01--2024-12
（ 3 ） 中国科学院物理所**II类, 负责人, 研究所自主部署, 2018-08--2021-08
（ 4 ） 三五族材料分子束外延生长技术平台, 参与, 中国科学院计划, 2022-01--2023-12
（ 2 ） 中国科学院青年创新促进会, 负责人, 中国科学院计划, 2021-01--2024-12
（ 3 ） 中国科学院物理所**II类, 负责人, 研究所自主部署, 2018-08--2021-08
（ 4 ） 三五族材料分子束外延生长技术平台, 参与, 中国科学院计划, 2022-01--2023-12
指导学生
已指导学生
刘家乐 硕士研究生 085600-材料与化工
现指导学生
张锦羽 博士研究生 070205-凝聚态物理
蒋雨桐 硕士研究生 085601-材料工程
秦乐 博士研究生 070205-凝聚态物理
文人杰 博士研究生 070205-凝聚态物理