基本信息
杨建国  男  硕导  所外单位
email: yangjianguo@zhejianglab.com
address: 北京市朝阳区北土城西路3号
postalCode:

招生信息

   
招生专业
080902-电路与系统
招生方向
集成电路设计,新型架构芯片设计,存储器设计与应用
硬件安全芯片,计算机体系结构

教育背景

2011-07--2016-06   复旦大学   博士
2007-09--2011-06   中北大学   本科

工作经历

   
工作简历
2019-04~现在, 中科院微电子研究所, 副研究员
2017-02~2019-02,复旦大学, 博士后
2011-07~2016-06,复旦大学, 博士
2007-09~2011-06,中北大学, 本科

教授课程

计算机体系结构

专利与奖励

   
奖励信息
(1) 华为奥林帕斯先锋奖, 其他, 2021
专利成果
( 1 ) 存储器控制方法、装置及铁电存储器, 2021, 第 1 作者, 专利号: CN112885386A

( 2 ) 一种阻变存储器单元电路、阻变存储器及写操作方法, 2021, 第 1 作者, 专利号: CN112837733A

( 3 ) 一种非易失静态存储单元、控制方法、元器件及设备, 2021, 第 1 作者, 专利号: CN112382320A

( 4 ) 基于7T1C结构的存储单元及其操作方法、存储器, 2020, 第 1 作者, 专利号: CN112133347A

( 5 ) 存储单元结构及存储器阵列结构、电压偏置方法, 2020, 第 2 作者, 专利号: CN111446271A

( 6 ) 一种多量程气体传感器阵列及其量程自动切换逻辑, 2018, 第 2 作者, 专利号: CN108226226A

( 7 ) RESISTIVE RANDOM ACCESS MEMORY AND WRITE OPERATION METHOD THEREOF, 2017, 第 2 作者, 专利号: US20170256314A1

( 8 ) 一种电阻型随机读取存储器及其写操作方法, 2015, 第 2 作者, 专利号: CN104882161A

出版信息

   
发表论文
(1) A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier, 2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, 第 11 作者
(2) Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching Array, 2021 IEEE International Electron Devices Meeting (IEDM), 2021, 第 11 作者
(3) A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory, MICROMACHINES, 2021, 第 11 作者
(4) Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System, IEDM, 2021, 第 7 作者
(5) A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022��m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference, 2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, 第 1 作者
(6) A 14 nm 100Kb 2T2R transpose RRAM with >150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast data-line current stabling scheme, IEEE Symposium on VLSI Technology, 2021, 第 6 作者
(7) High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 第 3 作者
(8) A 128kb Stochastic Computing Chip based on RRAM Flicker Noise with High Noise Density and Nearly Zero Autocorrelation on 28-nm CMOS Platform, 2021 IEEE International Electron Devices Meeting (IEDM), 2021, 第 11 作者
(9) Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement, IEEE ELECTRON DEVICE LETTERS, 2021, 第 5 作者
(10) Robust True Random Number Generator Using Stochastic Short-term Recovery of Charge Trapping FinFET for Advanced Hardware Security, 2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2020, 第 1 作者
(11) A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme, IEEETRANSACTIONSONVERYLARGESCALEINTEGRATIONVLSISYSTEMS, 2020, 第 11 作者
(12) Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing, ADVANCED MATERIALS, 2020, 第 8 作者
(13) A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm(2) Using Sneaking Current Suppression and Compensation Techniques, 2020 IEEE SYMPOSIUM ON VLSI CIRCUITS, 2020, 第 1 作者
(14) Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory, ACS APPLIED MATERIALS & INTERFACES, 2020, 第 2 作者
(15) First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node, 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020, 第 4 作者
(16) A highly CMOS compatible hafnia-based ferroelectric diode, NATURE COMMUNICATIONS, 2020, 第 3 作者
(17) A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications, 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020, 第 1 作者
(18) A Machine-Learning-Resistant 3D PUF with 8-layer Stacking Vertical RRAM and 0.014% Bit Error Rate Using In-Cell Stabilization Scheme for IoT Security Applications, 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020, 第 1 作者
(19) Fabrication of heterostructured p-CuO/n-SnO2 core-shell nanowires for enhanced sensitive and selective formaldehyde detection, SENSORS & ACTUATORS: B. CHEMICAL, 2019, 第 3 作者
(20) Improved Ferroelectric Performance of Mg-Doped LiNbO 3 Films by an Ideal Atomic Layer Deposited Al 2 O 3 Tunnel Switch Layer, NANOSCALE RESEARCH LETTERS, 2019, 第 5 作者
(21) Fabrication of heterostructured p-CuO/n-SnO2 core-shell nanowires for enhanced sensitive and selective formaldehyde detection, SENSORS AND ACTUATORS B-CHEMICAL, 2019, 第 3 作者
(22) Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice, NANOMATERIALS, 2019, 第 3 作者
(23) Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition, CURRENT APPLIED PHYSICS, 2019, 第 4 作者
(24) Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 7 作者
(25) Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors, Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors, CHINESE PHYSICS LETTERS, 2018, 第 5 作者
(26) Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition, APL MATERIALS, 2018, 第 2 作者
(27) Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power Reduction, 2018 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC): PROCEEDINGS OF TECHNICAL PAPERS, 2018, 第 3 作者
(28) Novel Hybrid Computing Architecture with Memristor-Based Processing-in-Memory for Data-Intensive Applications, 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, 第 3 作者
(29) Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition, JOURNAL OF MATERIALS CHEMISTRY C, 2018, 第 4 作者
(30) Investigation of the optical and electrical properties of ZnO/Cu/ZnO multilayers grown by atomic layer deposition, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 第 3 作者
(31) Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors, Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors, 中国物理快报:英文版, 2018, 第 5 作者
(32) Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2017, 第 5 作者
(33) 不同工艺下操作算法对阻变存储器可靠性的影响, Influence of Operation Algorithm on RRAM Reliability Under Different Process, 半导体技术, 2016, 第 2 作者
(34) Novel 3D Horizontal RRAM Architecture with Isolation Cell Structure for Sneak Current Depression, 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, 第 3 作者
(35) A self-adaptive write driver with fast termination of step-up pulse for ReRAM, IEICE ELECTRONICS EXPRESS, 2016, 第 1 作者
(36) Cu_x Si_y O阻变存储器单粒子和总剂量辐照效应, SEE and TID Effects on Cu_xSi_yO-Based Resistive Random Access Memory, 半导体技术, 2015, 第 3 作者
(37) A Low Cost and High Reliability True Random Number Generator Based on Resistive Random Access Memory, PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015, 第 1 作者
(38) 阻变存储器读电路的优化设计, Optimizing the Design of Read Circuit of Resistive Random Access Memory, 复旦学报. 自然科学版, 2013, 第 2 作者

科研活动

   
科研项目
( 1 ) 阻变存储器电路设计及应用, 负责人, 国家任务, 2023-01--2025-12
( 2 ) 基于阻变随机突触阵列的概率计算芯片研究, 负责人, 国家任务, 2022-01--2025-12
( 3 ) 28/14nm RRAM IP 设计与应用, 负责人, 国家任务, 2022-01--2024-12
( 4 ) 面向忆阻神经网络的多值存储漂移特性及器件电路协同优化技术研究, 负责人, 国家任务, 2020-01--2022-12