基本信息
刘岳阳  男  硕导  中国科学院半导体研究所
电子邮件: yueyangliu@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号中科院半导体所2号楼305
邮政编码:

招生信息

   
招生专业
070205-凝聚态物理
招生方向
半导体器件可靠性物理,半导体器件界面研究,半导体材料缺陷计算

教育背景

2012-09--2017-06   湖南大学   获得博士学位
2008-09--2012-06   湖南大学   获得学士学位

工作经历

   
工作简历
2020-11~现在, 中国科学院半导体研究所, 副研究员
2019-02~2020-04,美国劳伦斯伯克利国家实验室, 访问学者
2017-07~2020-10,中国科学院半导体研究所, 博士后
2012-09~2017-06,湖南大学, 获得博士学位
2008-09~2012-06,湖南大学, 获得学士学位

出版信息

   
发表论文
(1) Birefringence and Dichroism in Quasi-1D Transition Metal Trichalcogenides: Direct Experimental Investigation, SMALL, 2021, 第 4 作者
(2) Vertical strain and electric field tunable band alignment in type-II ZnO/MoSSe van der Waals heterostructures, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2021, 通讯作者
(3) Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire, IEEE ELECTRON DEVICE LETTERS, 2021, 第 6 作者
(4) Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory, PHYSICAL REVIEW B, 2021, 第 1 作者
(5) Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS, ADVANCED MATERIALS, 2021, 通讯作者
(6) Distinguishing interfacial hole traps in (110), (100) high-k gate stack, 2019 IEEE International Reliability Physics Symposium : Volume 2 of 2, 2021, 
(7) Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate, ADVANCED MATERIALS, 2021, 
(8) Direct Synthesis and Enhanced Rectification of Alloy-to-Alloy 2D Type-II MoS2(1-x)Se2x/SnS2(1-y)Se2y Heterostructures, ADVANCED MATERIALS, 2021, 第 5 作者
(9) Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High-kappa MOSFETs, PHYSICAL REVIEW APPLIED, 2020, 第 2 作者
(10) First principles study of Schottky barriers at Ga2O3(100)/metal interfaces, RSC ADVANCES, 2020, 通讯作者
(11) Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO2/HfO2 Stacks from First-Principle Calculations, PHYSICAL REVIEW APPLIED, 2019, 第 1 作者
(12) Ab Initio Investigation of Charge Trapping Across the Crystalline-Si-Amorphous-SiO2 Interface, PHYSICAL REVIEW APPLIED, 2019, 第 1 作者
(13) An efficient mechanism for enhancing the thermoelectricity of nanoribbons by blocking phonon transport in 2d materials, JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 第 1 作者
(14) Physics of hole trapping process in high-k gate stacks: A direct simulation formalism for the whole interface system combining density-functional theory and Marcus theory, 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018, 

科研活动

   
科研项目
( 1 ) 半导体氧化层多界面缺陷中心电荷俘获机理研究, 负责人, 国家任务, 2021-01--2023-12