基本信息
丁武昌  男  硕导  中国科学院微电子研究所
电子邮件: dingwuchang@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号
邮政编码: 100029

研究领域

化合物半导体器件模型,射频、微波、毫米波器件模型

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
化合物半导体器件与电路,器件模型

教育背景

2004-09--2009-06   中国科学院研究生院   博士
2000-09--2004-06   中国科学技术大学   学士

工作经历

   
工作简历
2011-10~现在, 中国科学院微电子研究所, 副研究员
2011-06~2011-10,中国科学院微电子研究所, 助理研究员
2009-06~2011-06,中国科学院微电子研究所, 博士后

专利与奖励

   
专利成果
[1] 常虎东, 孙兵, 杨枫, 丁武昌, 金智, 刘洪刚. 一种异构集成HEMT器件结构. CN: CN110600443B, 2021-07-20.

[2] 常虎东, 孙兵, 杨枫, 丁武昌, 刘洪刚, 金智. 一种异构集成射频放大器结构. CN: CN110620556A, 2019-12-27.

[3] 常虎东, 孙兵, 杨枫, 丁武昌, 刘洪刚, 金智. 硅基异构集成材料及其制备方法、半导体器件. CN: CN110600362A, 2019-12-20.

[4] 贾锐, 丁武昌, 陈晨, 金智, 刘新宇. 一种高效晶体硅异质结太阳能电池的制备方法. 中国: CN103227247A, 2013-07-31.

[5] 崔冬萌, 贾锐, 丁武昌, 陈晨, 乔秀梅, 金智, 刘新宇. 一种高效异质结太阳能电池及其制备方法. 中国: CN103219402A, 2013-07-24.

[6] 贾锐, 乔秀梅, 丁武昌, 陈晨, 崔冬萌, 金智, 刘新宇. 一种石墨烯径向异质结太阳能电池及其制备方法. 中国: CN103219413A, 2013-07-24.

出版信息

   
发表论文
[1] 金智, 苏永波, 周静涛, 丁芃, 丁武昌, 杨枫, 刘桐. InP基毫米波、太赫兹器件及电路. 微波学报[J]. 2020, 5-8, http://lib.cqvip.com/Qikan/Article/Detail?id=00002FUOK9987JP0MP508JP1MLR.
[2] 甄文祥, 苏永波, 丁芃, 丁武昌, 杨枫, 金智. 基于InP DHBT的宽带高带宽利用率的ECL静态分频器. 微波学报[J]. 2020, 152-155, http://lib.cqvip.com/Qikan/Article/Detail?id=00002FUOK9987JP0MP508JPXMLR.
[3] Wang, Xi, Hu, Jun, Su, Yongbo, Ding, Peng, Ding, Wuchang, Yang, Feng, Muhammad, Asif, Jin, Zhi. A Wideband Gate Mixer Using 0.15 mu m GaAs Enhancement-Mode PHEMT Technology. PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS[J]. 2019, 84: 7-14, [4] 王溪, 姚鸿飞, 苏永波, 丁武昌, 阿瑟夫, 丁芃, 童志航, 金智. W波段InP DHBT宽带高功率压控振荡器. 红外与毫米波学报[J]. 2019, 38(1): 27-31, http://lib.cqvip.com/Qikan/Article/Detail?id=7001290900.
[5] Wang Xi, Yao HongFei, Su YongBo, Ding WuChang, Muhammad, Asif, Ding Peng, Tong ZhiHang, Jin Zhi. Fundamental W-band InP DHBT-based voltage-controlled oscillator with wide tuning range and high output power. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 38(1): 27-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000460879300005.
[6] Peng Ding, Chen Chen, Muhammad Asif, Xi Wang, Jiebin Niu, Feng Yang, Wuchang Ding, Yongbo Su, Dahai Wang, Zhi Jin. Si 3 N 4 /Al 2 O 3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2018, 6: 49-54, https://doaj.org/article/36e5a13e20294a1db3ab5d65b2542ba3.
[7] Ding, Peng, Chen, Chen, Ding, Wuchang, Yang, Feng, Su, Yongbo, Wang, Dahai, Jin, Zhi. Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance. SOLID-STATE ELECTRONICS[J]. 2016, 123: 1-5, http://dx.doi.org/10.1016/j.sse.2016.05.011.
[8] Wang Qing, Ding Peng, Su Yongbo, Ding Wuchang, Muhammad Asif, Tang Wu, Jin Zhi. f_T = 260 GHz and f_(max) = 607 GHz of 100-nm-gate In_(0.52)Al_(0.48)As/In_(0.7)Ga_(0.3)As HEMTs with G_(m.max) = 1441 mS/mm. JOURNAL OF SEMICONDUCTORS[J]. 2016, 37(7): 074003-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5839787&detailType=1.
[9] Ding, Wuchang, Jia, Rui, Li, Haofeng, Chen, Chen, Sun, Yun, Jin, Zhi, Liu, Xinyu. Design of two dimensional silicon nanowire arrays for antireflection and light trapping in silicon solar cells. JOURNAL OF APPLIED PHYSICS[J]. 2014, 115(1): http://www.irgrid.ac.cn/handle/1471x/1089103.
[10] 赵妙, 许恒宇, 杨谦, 吴昊, 杨霏, 杨成樾, 丁武昌, 金智, 刘新宇. 高温高压碳化硅功率器件封装技术研究. 智能电网(汉斯)[J]. 2014, 4(6): 252-258, http://lib.cqvip.com/Qikan/Article/Detail?id=HS724822014006006.
[11] Zhang, Daisheng, Jia, Rui, Chen, Chen, Ding, Wuchang, Jin, Zhi, Liu, Xinyu, Ye, Tianchun. Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method. CHEMICAL PHYSICS LETTERS[J]. 2014, 601: 69-73, http://dx.doi.org/10.1016/j.cplett.2014.03.092.
[12] 王仕建, 贾锐, 张希清, 孙昀, 孟彦龙, 丁武昌, 崔冬萌, 陈晨, 任高全. 激光在PERC晶硅电池中背面点接触电极制备中的应用. 发光学报[J]. 2013, 34(5): 634-638, http://lib.cqvip.com/Qikan/Article/Detail?id=45783063.
[13] Dou, Bingfei, Jia, Rui, Li, Haofeng, Chen, Chen, Sun, Yun, Zhang, Yue, Ding, Wuchang, Meng, Yanlong, Liu, Xinyu, Ye, Tianchun. Fabrication of ultra-small texture arrays on multicrystalline silicon surface for solar cell application. SOLAR ENERGY[J]. 2013, 91: 145-151, http://dx.doi.org/10.1016/j.solener.2012.12.024.
[14] 丁武昌. 光管理在晶体硅电池中的应用. 中国光学[J]. 2013, 6(5): 717-728, http://lib.cqvip.com/Qikan/Article/Detail?id=47527189.
[15] 崔冬萌, 贾锐, 丁武昌, 张烨, Weeber A W, 宋世庚. 梯度掺杂对n型异质结太阳能电池性能的影响. 发光学报[J]. 2013, 1505-1510, http://lib.cqvip.com/Qikan/Article/Detail?id=1002797100.
[16] Dou, Bingfei, Jia, Rui, Li, Haofeng, Chen, Chen, Ding, Wuchang, Meng, Yanlong, Liu, Xinyu, Ye, Tianchun. Rear surface protection and front surface bi-layer passivation for silicon nanostructure-textured solar cells. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2013, 46(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000312550900013.
[17] 窦丙飞, 贾锐, 李昊峰, 陈晨, 孟彦龙, 丁武昌, 金智, 刘新宇, 叶甜春. 银硅纳米颗粒用于制备晶体硅太阳电池超高效陷光的研究. 太阳能[J]. 2013, 58-60, http://lib.cqvip.com/Qikan/Article/Detail?id=45094572.
[18] 丁武昌, 贾锐, 崔冬萌, 陈晨, 孟彦龙, 乔秀梅, 金智, 刘新宇. 多晶硅电池叠层抗反射层的设计研究. 太阳能[J]. 2013, 35-37, http://lib.cqvip.com/Qikan/Article/Detail?id=44775221.
[19] Li HaoFeng, Jia Rui, Dou BingFei, Chen Chen, Xing Zhao, Yang YongZhou, Ding WuChang, Meng YanLong, Liu XinYu, Ye TianChun, Li ShangQing. Research on ultra-small textured surface of multicrystalline silicon solar cell. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2013, 56(4): 952-956, http://www.irgrid.ac.cn/handle/1471x/1089085.
[20] Dou, Bingfei, Jia, Rui, Li, Haofeng, Chen, Chen, Ding, Wuchang, Meng, Yanlong, Xing, Zhao, Liu, Xinyu, Ye, Tianchun. High performance radial p-n junction solar cell based on silicon nanopillar array with enhanced decoupling mechanism. APPLIED PHYSICS LETTERS[J]. 2012, 101(18): [21] Dou, Bingfei, Jia, Rui, Li, Haofeng, Chen, Chen, Meng, Yanlong, Ding, Wuchang, Liu, Xinyu, Ye, Tianchun, Wang, Yunfeng. Maskless fabrication of selectively sized silicon nanostructures for solar cell application. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[J]. 2012, 30(4): http://dx.doi.org/10.1116/1.4732789.
[22] 丁武昌. Formation of silicon nanocrystals embedded in high-κ dielectric HfO2 and their application for charge storage. Journal of Vacuum Science & Technology B. 2011, [23] Yue, Huihui, Jia, Rui, Chen, Chen, Ding, Wuchang, Meng, Yanlong, Wu, Deqi, Wu, Dawei, Chen, Wei, Liu, Xinyu, Jin, Zhi, Wang, Wenwu, Ye, Tianchun. Antireflection properties and solar cell application of silicon nanostructures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[J]. 2011, 29(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000291111300013.
[24] Ding, Wuchang, Jia, Rui, Wu, Deqi, Chen, Chen, Li, Haofeng, Liu, Xinyu, Ye, Tianchun. Numerical simulation and modeling of spectral conversion by silicon nanocrystals with multiple exciton generation. JOURNAL OF APPLIED PHYSICS[J]. 2011, 109(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000288387900102.
[25] 吴大卫, 贾锐, 武德起, 丁武昌, 陈伟, 陈晨, 岳会会, 刘新宇, 陈宝钦. 氧化铝钝化在晶体硅太阳电池中的应用. 微纳电子技术[J]. 2011, 48(8): 528-535, http://lib.cqvip.com/Qikan/Article/Detail?id=38804474.
[26] Li HaoFeng, Jia Rui, Ding WuChang, Chen Chen, Meng YanLong, Liu XinYu. The analysis of electrical performances of nanowires silicon solar cells. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2011, 54(12): 3341-3346, http://lib.cqvip.com/Qikan/Article/Detail?id=40119274.
[27] Li, Haofeng, Jia, Rui, Chen, Chen, Xing, Zhao, Ding, Wuchang, Meng, Yanlong, Wu, Deqi, Liu, Xinyu, Ye, Tianchun. Influence of nanowires length on performance of crystalline silicon solar cell. APPLIED PHYSICS LETTERS[J]. 2011, 98(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000289580800016.
[28] 丁武昌. Silicon NW-array-textured solar cells for photovoltaic application. Journal of Applied Physics. 2010, [29] 丁武昌, 刘艳, 张云, 郭剑川, 左玉华, 成步文, 余金中, 王启明. A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er^3+ ions. 中国物理:英文版[J]. 2009, 3044-3048, http://lib.cqvip.com/Qikan/Article/Detail?id=31023273.
[30] Chen, Yanghua, Li, Cheng, Zhou, Zhiwen, Lai, Hongkai, Chen, Songyan, Ding, Wuchang, Cheng, Buwen, Yu, Yude. Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate. APPLIED PHYSICS LETTERS[J]. 2009, 94(14): http://ir.semi.ac.cn/handle/172111/7249.
[31] 丁武昌, 徐学俊, 成步文, 左玉华, 余金中, 王启明. 任意势垒隧穿几率的一种高精度数值算法. 半导体学报[J]. 2008, 29(2): 201-205, http://lib.cqvip.com/Qikan/Article/Detail?id=26630196.
[32] Ding, W C, Hu, D, Zheng, J, Chen, P, Cheng, B W, Yu, J Z, Wang, Q M. Strong visible and infrared photoluminescence from Er-implanted silicon nitride films. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2008, 41(13): http://ir.semi.ac.cn/handle/172111/6618.