基本信息
欧欣  男  博导  中国科学院上海微系统与信息技术研究所
电子邮件: ouxin@mail.sim.ac.cn
通信地址: 上海市长宁区长宁路865号
邮政编码:

研究领域

主要从事先进SOIXOI异质集成材料技术、载能离子束与材料和器件相互作用、纳米材料与器件等


招生信息

   
招生专业
080903-微电子学与固体电子学
082703-核技术及应用
080502-材料学
招生方向
SOI材料
异质集成材料
离子束技术

教育背景

2007-03--2009-04   德国德累斯顿Rossendorf研究中心   联合培养博士生
2006-04--2009-07   中国科学院上海微系统与信息技术研究所   博士
2003-09--2006-03   浙江大学   硕士
1999-09--2003-07   合肥工业大学   学士

工作经历

   
工作简历
2015-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2009-07~2014-12,德国亥姆霍兹德累斯顿Rossendorf研究中心, 博士后,Research Scientist
2009-07~2010-02,德国马普微结构物理研究所, 博士后
社会兼职
2017-06-16-2021-06-09,上海市半导体材料专业委员会, 委员
2016-08-31-2018-08-31,国际期刊Scientific Reports, 编委
2015-04-08-2019-04-08,核心电子材料与器件协同创新中心, 学术委员会委员

专利与奖励

   
奖励信息
(1) 国际IBMM奖, 一等奖, 其他, 2016
(2) 欧洲材料大会“最佳墙报奖”, 一等奖, 其他, 2013
(3) 德国亥姆霍兹-德累斯顿研究中心“年度研究奖”, 一等奖, 研究所(学校), 2011
(4) 中科院优秀博士论文, 一等奖, 部委级, 2011
(5) 国际离子注入技术大会“青年学者奖”, 一等奖, 其他, 2010
专利成果
[1] 欧欣, 金婷婷, 林家杰, 游天桂, 周鸿燕, 张师斌. 基于同一衬底制备不同厚度薄膜的方法及其结构、及应用器件. CN: CN111799367B, 2021-07-27.

[2] 欧欣, 张师斌, 林家杰, 黄浩, 游天桂, 黄凯, 王曦. 可调控电磁波吸收的超材料晶体结构及其制备方法. CN: CN110632687B, 2021-07-27.

[3] 欧欣, 王成立, 伊艾伦, 沈晨, 张加祥. 一种光学微纳结构的制备方法. CN: CN113120857A, 2021-07-16.

[4] 欧欣, 王成立, 张师斌, 伊艾伦, 郑鹏程. 一种多层异质单晶薄膜衬底的制备方法. CN: CN113130376A, 2021-07-16.

[5] 欧欣, 郑鹏程, 张师斌, 王成立, 周鸿燕. 一种兰姆波谐振器及弹性波装置. CN: CN113114158A, 2021-07-13.

[6] 欧欣, 石航宁, 游天桂. 异质集成GaN薄膜及GaN器件的制备方法. CN: CN113097124A, 2021-07-09.

[7] 欧欣, 石航宁, 刘仁杰, 游天桂. 氮化镓半导体结构、Micro LED器件及制备方法. CN: CN113097352A, 2021-07-09.

[8] 欧欣, 张晓蕾, 王庶民, 岳丽. 一种GaSb基InSb量子点及其制备方法. CN: CN111244761B, 2021-07-02.

[9] 欧欣, 陈阳, 黄凯, 李忠旭, 赵晓蒙. 一种多材料共平面的异质集成结构及其制备方法. CN: CN113066749A, 2021-07-02.

[10] 欧欣, 伊艾伦, 游天桂. 一种半导体衬底的制备方法. CN: CN112864006A, 2021-05-28.

[11] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种异质衬底上的薄膜结构及其制备方法. CN: CN111883649B, 2021-04-27.

[12] 欧欣, 张丽萍, 张师斌, 周鸿燕, 吴进波. 一种声波谐振器及其制备方法. CN: CN112688657A, 2021-04-20.

[13] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种衬底基板/压电材料薄膜结构及其制备方法和应用. CN: CN111884616B, 2021-04-13.

[14] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种异质压电薄膜结构及其制备方法. CN: CN111883644B, 2021-04-13.

[15] 欧欣, 张润春, 龚谦, 游天桂, 黄凯, 王曦. Ge复合衬底、衬底外延结构及其制备方法. CN: CN107195534B, 2021-04-13.

[16] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种可集成式中红外光探测器及其制备方法. CN: CN111883643B, 2021-04-09.

[17] 欧欣, 黄浩, 张师斌, 游天桂. 半导体陷光结构及其制备方法. CN: CN111081811B, 2021-04-02.

[18] 欧欣, 王庶民, 王畅, 游天桂, 张焱超, 黄凯, 王利娟, 林家杰, 潘文武. 一种异质结构的制备方法. CN: CN109427538B, 2021-04-02.

[19] 欧欣, 黄凯, 李文琴, 赵晓蒙, 鄢有泉, 李忠旭, 王曦. 异质键合结构的制备方法. CN: CN111383915B, 2021-03-23.

[20] 欧欣, 石航宁, 游天桂, 周李平, 徐文慧. 复合异质集成半导体结构、半导体器件及制备方法. CN: CN112530855A, 2021-03-19.

[21] 欧欣, 石航宁, 游天桂, 伊艾伦, 徐文慧. GaN基HEMT器件的制备方法. CN: CN112530803A, 2021-03-19.

[22] 欧欣, 黄凯, 李文琴, 赵晓蒙, 鄢有泉, 李忠旭, 王曦. 异质键合结构翘曲度的调节方法及后处理方法. CN: CN111383914B, 2021-03-19.

[23] 欧欣, 陈阳, 黄凯. 一种提升热释电晶圆等离子体激活均匀性的方法. CN: CN112490346A, 2021-03-12.

[24] 黄凯, 欧欣, 赵晓蒙. 一种异质结构薄膜衬底的制备方法. CN: CN112467024A, 2021-03-09.

[25] 欧欣, 陈阳, 黄凯. 一种键合结构中的薄膜晶圆和剩余晶圆的分离方法. CN: CN112420512A, 2021-02-26.

[26] 欧欣, 孙嘉良, 林家杰, 游天桂. 一种异质薄膜结构及其制备方法. CN: CN112382559A, 2021-02-19.

[27] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 吴进波. 一种声波谐振器. CN: CN112272015A, 2021-01-26.

[28] 欧欣, 鄢有泉, 黄凯, 李忠旭, 游天桂, 王曦. 异质薄膜结构的制备方法. CN: CN110880920B, 2021-01-19.

[29] 黄凯, 欧欣, 张润春, 游天桂, 王曦. 晶圆键合方法及异质衬底制备方法. CN: CN106711027B, 2021-01-05.

[30] 吕越, 黄浩, 贾棋, 游天桂, 伍文涛, 欧欣, 高波, 王镇. 一种利用离子注入实现目标薄膜纵向均匀掺杂的方法. CN: CN109727850B, 2020-12-08.

[31] 欧欣, 林家杰, 金婷婷, 游天桂, 王羲. Ⅲ-Ⅴ族化合物半导体异质键合结构的制备方法. CN: CN112018025A, 2020-12-01.

[32] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 陈阳, 聂峥. 衬底上薄膜的制备方法. CN: CN110534474B, 2020-11-24.

[33] 欧欣, 周李平, 伊艾伦, 游天桂. 一种单晶钻石薄膜的制备方法. CN: CN111962148A, 2020-11-20.

[34] 欧欣, 张师斌, 周鸿燕, 王成立, 郑鹏程, 黄凯. 一种高频声表面波谐振器及其制备方法. CN: CN110138356B, 2020-11-06.

[35] 欧欣, 伊艾伦, 黄凯, 赵晓蒙, 张师斌. 一种高频可调节磁场探测器的制备方法及磁场探测器. CN: CN111880124A, 2020-11-03.

[36] 欧欣, 鄢有泉. 一种硅基钽酸锂压电单晶薄膜衬底的制备方法. CN: CN111883646A, 2020-11-03.

[37] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种声波谐振器及其制备方法. CN: CN111865256A, 2020-10-30.

[38] 欧欣, 鄢有泉. 一种异质集成压电单晶薄膜衬底的表面优化方法. CN: CN111864054A, 2020-10-30.

[39] 欧欣, 徐文慧, 游天桂, 沈正浩. 一种铌酸锂自支撑薄膜及其制备方法. CN: CN111850692A, 2020-10-30.

[40] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种热释电红外探测器的制备方法及热释电红外探测器. CN: CN111864046A, 2020-10-30.

[41] 欧欣, 伊艾伦, 游天桂, 黄凯, 王曦. 一种硅基异质集成4H-SiC外延薄膜结构的制备方法. CN: CN109678106B, 2020-10-30.

[42] 欧欣, 徐文慧, 游天桂, 沈正浩. 一种异质半导体薄膜及其制备方法. CN: CN111834205A, 2020-10-27.

[43] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种表面均匀性优化的压电单晶薄膜制备方法. CN: CN111834520A, 2020-10-27.

[44] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种多层膜结构衬底上的压电单晶薄膜及其制备方法. CN: CN111834518A, 2020-10-27.

[45] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种临时键合和解键合方法、载片结构及应用. CN: CN111834279A, 2020-10-27.

[46] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种提高单晶压电薄膜厚度均匀性的方法. CN: CN111834519A, 2020-10-27.

[47] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种基于LNOI光子平台的硅光探测器及其制备方法. CN: CN111834473A, 2020-10-27.

[48] 欧欣, 周鸿燕, 张师斌, 郑鹏程, 黄凯, 游天桂. 单片式混合集成声波谐振器阵列及其制备方法. CN: CN111817678A, 2020-10-23.

[49] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种薄膜体声波谐振器的制备方法. CN: CN111817681A, 2020-10-23.

[50] 欧欣, 林家杰, 游天桂, 沈正皓, 金婷婷. 降低薄膜剥离热应力的异质结构薄膜的制备方法. CN: CN111799368A, 2020-10-20.

[51] 欧欣, 林家杰, 游天桂, 沈正皓, 金婷婷. 一种降低异质结构薄膜退火热应力的方法. CN: CN111799215A, 2020-10-20.

[52] 欧欣, 金婷婷, 林家杰, 游天桂. 一种异质衬底薄膜的制备方法. CN: CN111799366A, 2020-10-20.

[53] 欧欣, 孙嘉良, 游天桂, 林家杰. 一种基于离子注入的铌酸锂或钽酸锂晶圆黑化方法. CN: CN111799364A, 2020-10-20.

[54] 欧欣, 徐文慧, 游天桂, 沈正皓. 氧化镓半导体结构、日盲光电探测器及制备方法. CN: CN111312852B, 2020-10-20.

[55] 欧欣, 鄢有泉, 黄凯, 游天桂, 王曦. 单晶压电薄膜异质衬底的制备方法. CN: CN110137341B, 2020-10-20.

[56] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种可调光栅耦合器. CN: CN111751927A, 2020-10-09.

[57] 欧欣, 孙嘉良, 游天桂, 林家杰. 一种基于内扩散和离子注入的铌酸锂波导制备方法. CN: CN111722318A, 2020-09-29.

[58] 欧欣, 池超旦, 林家杰, 游天桂. 一种Si基InGaAs光电探测器的制备方法及光电探测器. CN: CN111653649A, 2020-09-11.

[59] 高波, 陈建国, 吕越, 黄浩, 游天桂, 欧欣, 王镇. 一种磁性掺杂超导薄膜及制备方法和超导转变边沿探测器. CN: CN111575668A, 2020-08-25.

[60] 欧欣, 梁好, 林家杰, 游天桂, 王庶民. 一种硅基无磷激光器及其制备方法. CN: CN111564756A, 2020-08-21.

[61] 欧欣, 伊艾伦, 游天桂, 张加祥, 黄凯, 王曦. 一种单光子源的制备方法及单光子源和集成光学器件. CN: CN111564534A, 2020-08-21.

[62] 欧欣, 伊艾伦, 游天桂, 张加祥, 黄凯, 王曦. 一种1550nm波段单光子源的制备方法及单光子源和光学器件. CN: CN111564533A, 2020-08-21.

[63] 欧欣, 伊艾伦, 石航宁, 游天桂, 张加祥, 黄凯, 王曦. 一种高导热氮化镓高功率HEMT器件的制备方法. CN: CN111540710A, 2020-08-14.

[64] 欧欣, 石航宁, 伊艾伦, 游天桂, 张加祥, 黄凯, 王曦. 一种金刚石基异质集成氮化镓薄膜与晶体管的微电子器件及其制备方法. CN: CN111540684A, 2020-08-14.

[65] 欧欣, 徐文慧, 游天桂, 沈正皓. 氧化镓半导体结构、MOSFET器件及制备方法. CN: CN110854062B, 2020-08-11.

[66] 欧欣, 李忠旭, 赵晓蒙, 陈阳, 黄凯. 一种制备晶圆级异质集成衬底的设备. CN: CN211150519U, 2020-07-31.

[67] 欧欣, 徐文慧, 游天桂, 沈正皓. 氧化镓半导体结构、垂直型氧化镓基功率器件及制备方法. CN: CN111223782A, 2020-06-02.

[68] 欧欣, 伊艾伦, 林家杰, 张师斌, 于庆凯, 谢晓明. 一种Si基衬底异质集成石墨烯的制备方法. CN: CN111217359A, 2020-06-02.

[69] 欧欣, 林家杰, 沈正皓, 金婷婷, 游天桂. 一种SiC基InP光子集成模块及其制备方法. CN: CN111146681A, 2020-05-12.

[70] 高波, 吕越, 黄浩, 游天桂, 欧欣, 王镇. 一种超导转变边探测器的制备方法. CN: CN111063788A, 2020-04-24.

[71] 欧欣, 伊艾伦, 武震宇. 一种异质集成单晶钻石薄膜的制备方法. CN: CN110970363A, 2020-04-07.

[72] 欧欣, 黄凯, 贾棋, 游天桂, 王曦. 一种离子注入剥离制备半导体材料厚膜的方法. CN: CN105895576B, 2020-04-03.

[73] 欧欣, 鄢有泉, 黄凯, 赵晓蒙, 李忠旭, 陈阳, 游天桂. 一种带底电极的硅基钽酸锂单晶薄膜衬底及其制备方法和应用. CN: CN110867381A, 2020-03-06.

[74] 欧欣, 尤立星, 贾棋, 张伟君. 一种调控超导纳米线的单光子探测器及其制备方法. CN: CN107910400B, 2019-12-24.

[75] 欧欣, 王成立, 张师斌, 周鸿燕, 黄凯. 高频声波谐振器及其制备方法. CN: CN110601674A, 2019-12-20.

[76] 欧欣, 周鸿燕, 张师斌, 李忠旭, 黄凯, 赵晓蒙. 高频声波谐振器及其制备方法. CN: CN110572135A, 2019-12-13.

[77] 欧欣, 林家杰, 黄凯, 游天桂, 王曦. 异质薄膜复合结构及其制备方法. CN: CN110391131A, 2019-10-29.

[78] 黄凯, 欧欣, 赵晓蒙, 李文琴, 李忠旭, 鄢有泉. 含氧单晶薄膜的制备方法. CN: CN110223912A, 2019-09-10.

[79] 欧欣, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 李忠旭, 王曦. 异质结构的制备方法. CN: CN109904065A, 2019-06-18.

[80] 欧欣, 伊艾伦, 游天桂, 黄凯, 王曦. 一种硅基异质集成碳化硅薄膜结构的制备方法. CN: CN109686656A, 2019-04-26.

[81] 欧欣, 游天桂, 徐文慧, 郑鹏程, 黄凯, 王曦. 一种氧化镓半导体结构及其制备方法. CN: CN109671612A, 2019-04-23.

[82] 欧欣, 伊艾伦, 游天桂, 黄凯, 王曦. 一种高平坦度异质集成薄膜结构的制备方法. CN: CN109671618A, 2019-04-23.

[83] 欧欣, 黄凯, 贾棋, 张师斌, 游天桂, 王曦. 利用薄膜转移技术制备薄膜体声波器件的方法. CN: CN106209003B, 2019-03-22.

[84] 欧欣, 黄凯, 鄢有泉, 游天桂, 王曦. 一种薄膜异质结构的制备方法. 中国: CN108336219A, 2018.07.27.

[85] 欧欣, 游天桂, 黄凯, 贾棋, 伊艾伦, 王曦. 利用离子注入剥离技术制备单晶氧化物阻变存储器的方法. 中国: CN105895801B, 2018-09-25.

[86] 欧欣, 张师斌, 黄凯, 游天桂, 王曦. 基于单晶压电薄膜的声波谐振器及其制备方法. 中国: CN108493326A, 2018-09-04.

[87] 欧欣, 黄凯, 鄢有泉, 游天桂, 王曦. 一种薄膜异质结构的制备方法. 中国: CN108493334A, 2018-09-04.

[88] 欧欣, 贾棋, 黄凯, 王曦. 一种相变型氧化钒材料及其制备方法. 中国: CN105088166B, 2017.12.15.

[89] 欧欣, 贾棋, 斯蒂芬·福斯柯, 王曦. 一种高线密度极紫外多层膜闪耀光栅的制备方法. 中国: CN105068166B, 2017-12-29.

[90] 欧欣, 林家杰, 游天桂, 黄凯. 一种InP薄膜异质衬底的制备方法. 中国: CN106711026A, 2017-05-24.

[91] 欧欣, 龚谦, 游天桂, 黄凯, 林家杰, 张润春. 一种大尺寸III‑V异质衬底的制备方法. 中国: CN106653583A, 2017-05-10.

[92] 欧欣, 黄凯, 贾棋, 游天桂, 王曦. 一种用于制造支撑衬底上的单晶材料薄层结构的方法. 中国: CN105957831A, 2016.09.21.

[93] 欧欣, 黄凯, 贾棋, 王曦. 一种InP薄膜复合衬底的制备方法. 中国: CN105374664A, 2016-03-02.

[94] 欧欣, 斯蒂芬·福斯柯, 贾棋, 王曦. 一种纳米图形化方法. 中国: CN104986722A, 2015-10-21.

[95] 欧欣, 贾棋, 斯蒂芬·福斯柯, 王曦. 一种大面积纳米阵列的制备方法. 中国: CN104986728A, 2015-10-21.

[96] 欧欣, 王曦, 陈静, 孙佳胤, 武爱民. 采用金属键合工艺实现氮化镓发光二极管垂直结构的方法. 中国: CN101005110, 2007-07-25.

出版信息

   
发表论文
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[52] Jia, Qi, Huang, Kai, You, Tiangui, Yi, Ailun, Lin, Jiajie, Zhang, Shibin, Zhou, Min, Zhang, Bin, Zhang, Bo, Yu, Wenjie, Ou, Xin, Wang, Xi. Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing. APPLIED PHYSICS LETTERS[J]. 2018, 112(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000431980100015.
[53] Huang, Kai, Jia, Abqi, You, Tiangui, Zhang, Shibin, Lin, Jiajie, Zhang, Runchun, Zhou, Min, Yu, Wenjie, Zhang, Bo, Ou, Xin, Wang, Xi. Defect formation in MeV H+ implanted GaN and 4H-SiC investigated by cross-sectional Raman spectroscopy. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS[J]. 2017, 406: 656-661, http://dx.doi.org/10.1016/j.nimb.2017.02.027.
[54] Huang, Kai, Jia, Qi, You, Tiangui, Zhang, Runchun, Lin, Jiajie, Zhang, Shibin, Zhou, Min, Zhang, Bo, Yu, Wenjie, Ou, Xin, Wang, Xi. Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates. SCIENTIFIC REPORTS[J]. 2017, 7(1): https://doaj.org/article/ef90947035bf4e5bb9ebcba7dbfa920a.
[55] Xin Ou. Rectifyin filamentary resistive switching in ion-exfoliated LiNbO3 thin films. Applied Physics Letters. 2016, [56] Pan, Xinqiang, Shuai, Yao, Wu, Chuangui, Luo, Wenbo, Sun, Xiangyu, Yuan, Ye, Zhou, Shengqiang, Ou, Xin, Zhang, Wanli. Resistive switching behavior in single crystal SrTiO3 annealed by laser. APPLIED SURFACE SCIENCE[J]. 2016, 389: 1104-1107, http://dx.doi.org/10.1016/j.apsusc.2016.08.013.
[57] Ou, Xin, Heinig, KarlHeinz, Huebner, Rene, Grenzer, Joerg, Wang, Xi, Helm, Manfred, Fassbender, Juergen, Facsko, Stefan. Faceted nanostructure arrays with extreme regularity by self-assembly of vacancies. NANOSCALE[J]. 2015, 7(45): 18928-18935, https://www.webofscience.com/wos/woscc/full-record/WOS:000364852500014.
[58] You, Tiangui, Ou, Xin, Niu, Gang, Baerwolf, Florian, Li, Guodong, Du, Nan, Buerger, Danilo, Skorupa, Ilona, Jia, Qi, Yu, Wenjie, Wang, Xi, Schmidt, Oliver G, Schmidt, Heidemarie. Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes. SCIENTIFIC REPORTS[J]. 2015, 5: https://www.webofscience.com/wos/woscc/full-record/WOS:000367033300001.
[59] Ou, Xin, Shuai, Yao, Luo, Wenbo, Siles, Pablo F, Koegler, Reinhard, Fiedler, Jan, Reuther, Helfried, Zhou, Shengqiang, Huebner, Rene, Facsko, Stefan, Helm, Manfred, Mikolajick, Thomas, Schmidt, Oliver G, Schmidt, Heidemarie. Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts. ACS APPLIED MATERIALS & INTERFACES[J]. 2013, 5(23): 12764-12771, https://www.webofscience.com/wos/woscc/full-record/WOS:000328439600071.
[60] Ou, Xin, Koegler, Reinhard, Zhou, HongBo, Anwand, Wolfgang, Grenzer, Joerg, Huebner, Rene, Voelskow, Matthias, Butterling, Maik, Zhou, Shengqiang, Skorupa, Wolfgang. Release of helium from vacancy defects in yttria-stabilized zirconia under irradiation. PHYSICAL REVIEW B[J]. 2012, 86(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000311910900003.
[61] Ou, Xin, Das Kanungo, Pratyush, Koegler, Reinhard, Werner, Peter, Goesele, Ulrich, Skorupa, Wolfgang, Wang, Xi. Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy. NANO LETTERS[J]. 2010, 10(1): 171-175, http://ir.sim.ac.cn/handle/331004/94739.
[62] Ou, Xin, Das Kanungo, Pratyush, Koegler, Reinhard, Werner, Peter, Goesele, Ulrich, Skorupa, Wolfgang, Wang, Xi. Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy. ADVANCED MATERIALS[J]. 2010, 22(36): 4020-4024, http://www.irgrid.ac.cn/handle/1471x/327555.
[63] Ou Xin, Chen Jing, Wu Aimin, Sun Jiayin. Au-Au Wafer Bonding in Vertical-Structure GaN LED Fabrication. Journal of Functional Materials and Devices[J]. 2010, 16(3): 276-280, [64] 欧欣. 应用于SIMOX工艺中的缺陷工程. 2010, http://ir.sim.ac.cn/handle/331004/82437.
[65] 欧欣, 陈静, 武爱民, 孙家胤. 采用金-金键合工艺制备垂直结构氮化镓发光二极管(英文). 功能材料与器件学报[J]. 2010, http://ir.sim.ac.cn/handle/331004/52460.
[66] 欧欣. 应用于SLMOX工艺中的缺陷工程. 2009, [67] Ou, Xin, Keller, Adrian, Helm, Manfred, Fassbender, Jürgen, Facsko, Stefan. Reverse epitaxy of Ge: ordered and facetted surface patterns. http://arxiv.org/abs/1303.5133.
发表著作
(1) Subsecond Annealing of Advanced Materials, Springer, 2014-01, 第 5 作者

科研活动

   
科研项目
( 1 ) 基于离子束技术的信息材料制备与改性研究, 主持, 国家级, 2017-01--2019-12
( 2 ) 中科院****择优支持, 主持, 部委级, 2016-01--2018-12
( 3 ) 第三代半导体的衬底制备及同质外延, 主持, 国家级, 2017-06--2021-07
( 4 ) 高纯SiC衬底制备与离子束剥离研究, 主持, 省级, 2017-06--2020-07
( 5 ) 硅基GaN材料表征, 主持, 院级, 2017-06--2018-07
( 6 ) 高性能无源敏感薄膜材料Si基异质集成方法及传感器芯片研究, 参与, 国家级, 2017-06--2020-07
参与会议
(1) “Reverse Epitaxy with low energy ion irradiation: Mechanism, Experiments and Applications”       2016-10-30
(2)Ion-Surface interaction in reverse epitaxy   2015-12-08
(3)“Reverse epitaxy”   2015-10-24

指导学生

现指导学生

鄢有泉  硕士研究生  080903-微电子学与固体电子学  

张润春  硕士研究生  085209-集成电路工程  

周鸿燕  博士研究生  080903-微电子学与固体电子学  

张师斌  博士研究生  080903-微电子学与固体电子学  

林家杰  博士研究生  080903-微电子学与固体电子学