主要从事先进SOI及XOI异质集成材料技术、载能离子束与材料和器件相互作用、纳米材料与器件等

   

080903-微电子学与固体电子学
082703-核技术及应用
080502-材料学

SOI材料
异质集成材料与器件
离子束技术

2007-03--2009-04   德国德累斯顿Rossendorf研究中心   联合培养博士生
2006-04--2009-07   中国科学院上海微系统与信息技术研究所   博士
2003-09--2006-03   浙江大学   硕士
1999-09--2003-07   合肥工业大学   学士

   

2023-01~现在, 中科院上海微系统 与信息技术研究所, 硅基材料与集成器件研究室主任
2019-07~2022-12,中科院上海微系统 与信息技术研究所, 硅基材料与集成器件研究室副主任
2015-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2009-07~2014-12,德国亥姆霍兹德累斯顿Rossendorf研究中心, 博士后，Research Scientist
2009-07~2010-02,德国马普微结构物理研究所, 博士后

2024-02-01-2027-01-31,南通大学, 兼职教授
2022-09-29-2025-09-29,复旦大学, 兼职教授
2022-02-28-2025-02-28,Frontiers in Materials, 客座编辑
2021-03-31-2025-03-31,上海市有色金属学会, 理事
2021-03-31-2026-03-31,中国电工学会双束专委会, 委员
2021-03-31-2023-03-31,中国物理, 客座编辑
2018-08-31-2022-08-31,中国核学会, 理事

   

（1） 中科院优秀导师, 院级, 2023
（2） 中国电子学会技术发明奖, 一等奖, 其他, 2023
（3） 中国青年科技奖, , 国家级, 2022
（4） 2022 IEEE Microwave Theory and Technology Society (MTT-S)微波奖, 其他, 2022
（5） 全国颠覆性技术创新大赛总决赛优胜奖, , 部委级, 2022
（6） 中国电工技术学会科技进步奖, 三等奖, 其他, 2021
（7） 中国创新方法大赛三等奖, 其他, 2021
（8） 2020年度中国半导体十大研究进展提名奖, , 其他, 2021
（9） 产学研合作创新奖, , 省级, 2021
（10） 北京市科技进步奖, 一等奖, 省级, 2020
（11） 2019年度中国光学十大进展-应用研究类, 其他, 2020
（12） 中科院****终期评估优秀, 院级, 2019
（13） 上海市优秀学术带头人, 市地级, 2019
（14） 中国电子学会优秀科技工作者, 一等奖, 部委级, 2018
（15） 国际IBMM奖, 一等奖, 其他, 2016
（16） 欧洲材料大会“最佳墙报奖”, 一等奖, 其他, 2013
（17） 德国亥姆霍兹-德累斯顿研究中心“年度研究奖”, 一等奖, 研究所（学校）, 2011
（18） 中科院优秀博士论文, 一等奖, 部委级, 2011
（19） 国际离子注入技术大会“青年学者奖”, 一等奖, 其他, 2010

[1] 伊艾伦, 欧欣, 周民. 一种硅基氮化镓HEMT器件及其制备方法. CN: CN116705605A, 2023-09-05.
[2] 伊艾伦, 欧欣, 周民. 一种场效晶体管的制备方法. CN: CN116613069A, 2023-08-18.
[3] 伊艾伦, 欧欣, 周民. 一种碳化硅场效应管的制备方法. CN: CN116646250A, 2023-08-25.
[4] 伊艾伦, 欧欣, 周民. 一种氮化镓HEMT器件及其制备方法. CN: CN116598203A, 2023-08-15.
[5] 欧欣, 郑鹏程, 张师斌, 吴进波, 张丽萍. 一种声学谐振器及其制备方法、滤波器. CN: CN116633304A, 2023-08-22.
[6] 欧欣, 徐文慧, 伊艾伦, 游天桂, 瞿振宇. 一种异质集成体及其制备方法. CN: CN116666201A, 2023-08-29.
[7] 欧欣, 石航宁, 游天桂, 伊艾伦, 刘旭冬. 一种氮化镓高电子迁移率晶体管的制备方法. CN: CN116646247A, 2023-08-25.
[8] 欧欣, 吴进波, 张师斌, 郑鹏程, 房晓丽. 一种声波谐振器的制备方法及声波谐振器. CN: CN116599481A, 2023-08-15.
[9] 欧欣, 徐文慧, 伊艾伦, 游天桂, 瞿振宇. 一种异质结构及其制备方法. CN: CN116564802A, 2023-08-08.
[10] 欧欣, 石航宁, 丁佳欣, 游天桂, 伊艾伦. 一种晶圆键合方法、结构及半导体器件. CN: CN116613057A, 2023-08-18.
[11] 欧欣, 瞿振宇, 游天桂, 徐文慧, 赵天成. 氧化镓异质集成结构及制备方法. CN: CN116631847A, 2023-08-22.
[12] 欧欣, 赵天成, 游天桂, 徐文慧. 具有微流道的异质集成氧化镓场效应晶体管及制备方法. CN: CN116487340A, 2023-07-25.
[13] 欧欣, 姚虎林, 张师斌, 隋东辰. 一种声表面波器件的仿真方法、装置、电子设备及存储介质. CN: CN116401995A, 2023-07-07.
[14] 欧欣, 徐文慧, 游天桂, 沈正皓, 瞿振宇. 氧化镓结构的制备方法. CN: CN115863149B, 2023-07-21.
[15] 欧欣, 隋东辰, 张师斌, 姚虎林, 郑鹏程. 一种声表面波谐振器仿真方法及系统. CN: CN115618693A, 2023-01-17.
[16] 欧欣, 隋东辰, 张师斌, 姚虎林, 郑鹏程. 多物理场耦合谐振器的仿真方法及装置、存储介质和终端. CN: CN115563836A, 2023-01-03.
[17] 欧欣, 房晓丽, 郑鹏程, 张师斌, 张丽萍. 一种多传输零点的板波滤波器及信号处理电路. CN: CN115664370A, 2023-01-31.
[18] 欧欣, 隋东辰, 张师斌, 郑鹏程, 孙米静. 一种声表面波滤波器. CN: CN115425945A, 2022-12-02.
[19] 欧欣, 孙米静, 张师斌, 郑鹏程, 隋东辰. 一种声表面波谐振器. CN: CN115412052A, 2022-11-29.
[20] 张加祥, 欧炜文, 欧欣, 王旭东, 朱一帆. 一种能量可调谐的量子纠缠光源器件及其制备方法. CN: CN115377257A, 2022-11-22.
[21] 欧欣, 瞿振宇, 游天桂, 徐文慧. Ga2O3基异质集成pn结的制备方法. CN: CN115295404A, 2022-11-04.
[22] 张加祥, 欧炜文, 欧欣, 王旭东, 朱一帆. 一种半导体薄膜的转移印刷方法. CN: CN115320271A, 2022-11-11.
[23] 张加祥, 欧炜文, 欧欣, 朱一帆, 王旭东. 一种混合集成量子光源LED器件的制备方法. CN: CN115332404A, 2022-11-11.
[24] 张加祥, 欧炜文, 欧欣, 朱一帆, 王旭东. 一种混合集成单光子LED器件的制备方法. CN: CN115274943A, 2022-11-01.
[25] 欧欣, 朱一帆, 张加祥, 陈阳, 王成立. 一种能够控制铌酸锂波导侧壁倾角的刻蚀方法. CN: CN115356806A, 2022-11-18.
[26] 欧欣, 张丽萍, 张师斌, 吴进波, 郑鹏程. 一种基于压电衬底的多模式谐振器和多通带滤波器. CN: CN115347877A, 2022-11-15.
[27] 欧欣, 吴进波, 张师斌, 郑鹏程, 张丽萍. 一种高频声波谐振器及应用其的滤波器. CN: CN115021705A, 2022-09-06.
[28] 欧欣, 郑鹏程, 张师斌, 吴进波, 张丽萍. 一种纵向泄漏声表面波谐振器的结构及滤波器. CN: CN115001438A, 2022-09-02.
[29] 欧欣, 伊艾伦. 一种碳化硅衬底的制备方法及碳化硅衬底. CN: CN114864424A, 2022-08-05.
[30] 欧欣, 房晓丽, 张师斌, 郑鹏程. 一种声波谐振器的制备方法及其结构、滤波器. CN: CN115296636A, 2022-11-04.
[31] 欧欣, 伊艾伦. 一种声光耦合衬底、器件及器件制备方法. CN: CN114527587A, 2022-05-24.
[32] 欧欣, 伊艾伦, 王成立. 一种硅基碳化硅薄膜材料制备方法. CN: CN114525489A, 2022-05-24.
[33] 欧欣, 孙嘉良, 林家杰, 游天桂. 一种激光器结构的制备方法及其结构. CN: CN114530758A, 2022-05-24.
[34] 欧欣, 孙嘉良, 林家杰, 游天桂. 一种器件的制备方法及其结构. CN: CN114530421A, 2022-05-24.
[35] 欧欣, 周鸿燕, 张师斌. 一种单片集成声波滤波阵列及其制备方法. CN: CN114362719A, 2022-04-15.
[36] 欧欣, 姚虎林, 张师斌. 一种声表面波谐振器. CN: CN114337583A, 2022-04-12.
[37] 欧欣, 张丽萍, 张师斌, 郑鹏程, 周鸿燕. 一种声波谐振器及其制备方法. CN: CN114362705A, 2022-04-15.
[38] 欧欣, 姚虎林, 张师斌, 郑鹏程, 吴进波. 一种声学谐振器及其制备方法. CN: CN114362709A, 2022-04-15.
[39] 欧欣, 姚虎林, 张师斌. 一种声表面波谐振器. CN: CN114337582A, 2022-04-12.
[40] 欧欣, 张丽萍, 张师斌, 郑鹏程, 吴进波. 一种声波谐振器. CN: CN114362710A, 2022-04-15.
[41] 欧欣, 张丽萍, 张师斌, 郑鹏程, 周鸿燕. 一种多层同质的压电结构及制备方法. CN: CN114124023A, 2022-03-01.
[42] 欧欣, 张丽萍, 张师斌, 周鸿燕, 吴进波. 一种增强散热的悬空谐振器及制备方法. CN: CN114124022A, 2022-03-01.
[43] 欧欣, 房晓丽, 张师斌, 郑鹏程, 周鸿燕. 一种弹性波谐振器及多通带滤波器. CN: CN114124021A, 2022-03-01.
[44] 张加祥, 金婷婷, 欧欣, 欧炜文, 朱一帆. 一种集成量子纠缠光源的光量子芯片的制备方法及其结构. CN: CN114142946A, 2022-03-04.
[45] 张加祥, 朱一帆, 欧欣, 金婷婷, 王旭东. 一种混合集成光量子芯片的制备方法及其结构. CN: CN114137660A, 2022-03-04.
[46] 欧欣, 石航宁, 张师斌, 游天桂, 伊艾伦. 一种氮化铝/碳化硅复合声波谐振器的制备方法及谐振器. CN: CN113904645B, 2023-07-25.
[47] 欧欣, 石航宁, 张师斌, 游天桂, 郑鹏程. 一种氮化铝声波谐振器的制备方法及谐振器. CN: CN114070227A, 2022-02-18.
[48] 欧欣, 石航宁, 张师斌, 游天桂, 伊艾伦. 一种氮化铝/碳化硅复合声波谐振器的制备方法及谐振器. CN: CN113904645A, 2022-01-07.
[49] 欧欣, 石航宁, 张师斌, 游天桂, 郑鹏程. 一种氮化铝声波谐振器的制备方法及谐振器. CN: CN114070227B, 2023-07-25.
[50] 欧欣, 张丽萍, 张师斌, 周鸿燕, 吴进波. 一种声波谐振器及其制备方法. CN: CN113922784A, 2022-01-11.
[51] 高波, 陈建国, 吕越, 黄浩, 欧欣, 王镇. 一种基于离子注入的冷子管开关及其制备方法. CN: CN113764569A, 2021-12-07.
[52] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 张丽萍. 一种声波滤波器. CN: CN113708739A, 2021-11-26.
[53] 欧欣, 房晓丽, 郑鹏程, 张师斌, 张丽萍. 一种兰姆波器件及其制备方法. CN: CN113676150A, 2021-11-19.
[54] 欧欣, 郑鹏程, 房晓丽, 张师斌, 吴进波. 一种声波器件及其制备方法. CN: CN113676149A, 2021-11-19.
[55] 欧欣, 郑鹏程, 张师斌, 房晓丽, 吴进波. 一种弹性波谐振器及其制备方法. CN: CN113676152A, 2021-11-19.
[56] 欧欣, 张丽萍, 张师斌, 周鸿燕, 吴进波. 固态装配型横向振荡声波谐振器. CN: CN113630101A, 2021-11-09.
[57] 欧欣, 吴进波, 张师斌, 张丽萍, 郑鹏程. 体声波谐振器及其制备方法. CN: CN113381724A, 2021-09-10.
[58] 欧欣, 周鸿燕, 张师斌, 郑鹏程, 张丽萍. 一种声表面波谐振器及其制备方法. CN: CN113300683A, 2021-08-24.
[59] 欧欣, 周李平, 伊艾伦, 游天桂. 一种钻石晶体的异质键合方法及异质结构. CN: CN113284839A, 2021-08-20.
[60] 欧欣, 郑鹏程, 张师斌, 王成立, 周鸿燕. 一种兰姆波谐振器及弹性波装置. CN: CN113114158A, 2021-07-13.
[61] 欧欣, 王成立, 伊艾伦, 沈晨, 张加祥. 一种光学微纳结构的制备方法. CN: CN113120857A, 2021-07-16.
[62] 欧欣, 王成立, 张师斌, 伊艾伦, 郑鹏程. 一种多层异质单晶薄膜衬底的制备方法. CN: CN113130376A, 2021-07-16.
[63] 欧欣, 瞿振宇, 游天桂, 徐文慧. 异质键合结构及制备方法. CN: CN115206811A, 2022-10-18.
[64] 欧欣, 石航宁, 刘仁杰, 游天桂. 氮化镓半导体结构、Micro LED器件及制备方法. CN: CN113097352B, 2022-03-08.
[65] 欧欣, 石航宁, 游天桂. 异质集成GaN薄膜及GaN器件的制备方法. CN: CN113097124A, 2021-07-09.
[66] 欧欣, 石航宁, 刘仁杰, 游天桂. 氮化镓半导体结构、Micro LED器件及制备方法. CN: CN113097352A, 2021-07-09.
[67] 欧欣, 伊艾伦, 游天桂. 一种半导体衬底的制备方法. CN: CN112864006A, 2021-05-28.
[68] 欧欣, 陈阳, 张师斌, 赵晓蒙, 鄢有泉, 李忠旭. 一种声波谐振器及其制备方法. CN: CN112688657A, 2021-04-20.
[69] 欧欣, 伊艾伦, 游天桂. 一种SiC基异质集成氮化镓薄膜与HEMT器件的制备方法. CN: CN112635323A, 2021-04-09.
[70] 欧欣, 石航宁, 游天桂, 周李平, 徐文慧. 复合异质集成半导体结构、半导体器件及制备方法. CN: CN112530855A, 2021-03-19.
[71] 欧欣, 石航宁, 游天桂, 伊艾伦, 徐文慧. GaN基HEMT器件的制备方法. CN: CN112530803A, 2021-03-19.
[72] 欧欣, 陈阳, 黄凯. 一种提升热释电晶圆等离子体激活均匀性的方法. CN: CN112490346A, 2021-03-12.
[73] 黄凯, 欧欣, 赵晓蒙. 一种异质结构薄膜衬底的制备方法. CN: CN112467024A, 2021-03-09.
[74] 欧欣, 陈阳, 黄凯. 一种键合结构中的薄膜晶圆和剩余晶圆的分离方法. CN: CN112420512A, 2021-02-26.
[75] 欧欣, 孙嘉良, 林家杰, 游天桂. 一种异质薄膜结构及其制备方法. CN: CN112382559A, 2021-02-19.
[76] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 张丽萍. 一种声波谐振器. CN: CN114465594A, 2022-05-10.
[77] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 吴进波. 一种声波谐振器. CN: CN112272015A, 2021-01-26.
[78] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 张丽萍. 一种声波谐振器. CN: CN114465594A, 2022-05-10.
[79] 欧欣, 周李平, 伊艾伦, 游天桂. 一种单晶钻石薄膜的制备方法. CN: CN111962148A, 2020-11-20.
[80] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种异质衬底上的薄膜结构及其制备方法. CN: CN111883649B, 2021-04-27.
[81] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种可集成式中红外光探测器及其制备方法. CN: CN111883643B, 2021-04-09.
[82] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种可调光栅耦合器. CN: CN111751927B, 2021-08-17.
[83] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭, 黄浩. 一种压电薄膜的制备方法、压电薄膜及声表面波滤波器. CN: CN111883647B, 2021-05-25.
[84] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种衬底基板/压电材料薄膜结构及其制备方法和应用. CN: CN111884616B, 2021-04-13.
[85] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种压电薄膜的制备方法、压电薄膜及带通滤波器. CN: CN111883648B, 2021-05-25.
[86] 欧欣, 陈阳, 黄凯, 赵晓蒙, 鄢有泉, 李忠旭. 一种异质压电薄膜结构及其制备方法. CN: CN111883644B, 2021-04-13.
[87] 欧欣, 伊艾伦, 黄凯, 赵晓蒙, 张师斌. 一种高频可调节磁场探测器的制备方法. CN: CN111880124B, 2021-11-19.
[88] 欧欣, 伊艾伦, 黄凯, 赵晓蒙, 张师斌. 一种高频可调节磁场探测器的制备方法及磁场探测器. CN: CN111880124A, 2020-11-03.
[89] 欧欣, 伊艾伦, 黄凯, 赵晓蒙, 张师斌. 一种POI衬底、高频声波谐振器及其制备方法. CN: CN111865250B, 2021-10-19.
[90] 欧欣, 徐文慧, 游天桂, 沈正浩. 一种异质半导体薄膜及其制备方法. CN: CN111834205B, 2021-12-28.
[91] 欧欣, 鄢有泉. 一种硅基钽酸锂压电单晶薄膜衬底的制备方法. CN: CN111883646B, 2021-10-19.
[92] 欧欣, 鄢有泉. 一种异质集成压电单晶薄膜衬底的表面优化方法. CN: CN111864054B, 2021-12-24.
[93] 欧欣, 徐文慧, 游天桂, 沈正浩. 一种铌酸锂自支撑薄膜及其制备方法. CN: CN111850692A, 2020-10-30.
[94] 欧欣, 周鸿燕, 张师斌, 郑鹏程, 黄凯, 游天桂. 单片式混合集成声波谐振器阵列及其制备方法. CN: CN111817678B, 2021-12-28.
[95] 欧欣, 王成立. 一种偏振器件及其制备方法. CN: CN111736260B, 2021-11-19.
[96] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种表面均匀性优化的压电单晶薄膜制备方法. CN: CN111834520B, 2021-08-27.
[97] 欧欣, 林家杰, 游天桂, 沈正皓, 金婷婷. 降低薄膜剥离热应力的异质结构薄膜的制备方法. CN: CN111799368B, 2021-06-22.
[98] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种多层膜结构衬底上的压电单晶薄膜及其制备方法. CN: CN111834518B, 2021-08-27.
[99] 欧欣, 孙嘉良, 游天桂, 林家杰. 一种基于内扩散和离子注入的铌酸锂波导制备方法. CN: CN111722318B, 2021-12-03.
[100] 欧欣, 林家杰, 游天桂, 沈正皓, 金婷婷. 一种降低异质结构薄膜退火热应力的方法. CN: CN111799215B, 2021-05-11.
[101] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种热释电红外探测器的制备方法及热释电红外探测器. CN: CN111864046B, 2021-10-19.
[102] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种临时键合和解键合方法、载片结构及应用. CN: CN111834279B, 2021-08-17.
[103] 欧欣, 金婷婷, 林家杰, 游天桂, 周鸿燕, 张师斌. 基于同一衬底制备不同厚度薄膜的方法及其结构、及应用器件. CN: CN111799365B, 2022-03-25.
[104] 欧欣, 金婷婷, 林家杰, 游天桂. 一种异质衬底薄膜的制备方法. CN: CN111799366B, 2021-09-21.
[105] 欧欣, 孙嘉良, 游天桂, 林家杰. 一种基于离子注入的铌酸锂或钽酸锂晶圆黑化方法. CN: CN111799364B, 2021-12-21.
[106] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种提高单晶压电薄膜厚度均匀性的方法. CN: CN111834519B, 2021-12-03.
[107] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种基于LNOI光子平台的硅光探测器及其制备方法. CN: CN111834473A, 2020-10-27.
[108] 黄凯, 欧欣, 赵晓蒙, 李忠旭, 陈阳. 一种压电薄膜高温极化方法. CN: CN111740005A, 2020-10-02.
[109] 黄凯, 欧欣, 赵晓蒙, 李忠旭, 陈阳. 一种提高离子束剥离薄膜厚度均匀性的方法. CN: CN111740008A, 2020-10-02.
[110] 黄凯, 欧欣, 赵晓蒙, 李忠旭, 陈阳. 一种基于离子束增强腐蚀的压电晶圆表面处理方法. CN: CN111740009A, 2020-10-02.
[111] 欧欣, 池超旦, 林家杰, 游天桂. 一种Si基InGaAs光电探测器的制备方法及光电探测器. CN: CN111653649A, 2020-09-11.
[112] 欧欣, 伊艾伦, 石航宁, 游天桂, 张加祥, 黄凯, 王曦. 一种高导热氮化镓高功率HEMT器件的制备方法. CN: CN111540710B, 2023-08-04.
[113] 欧欣, 伊艾伦, 石航宁, 游天桂, 张加祥, 黄凯, 王曦. 一种高导热氮化镓高功率HEMT器件的制备方法. CN: CN111540710A, 2020-08-14.
[114] 欧欣, 石航宁, 伊艾伦, 游天桂, 张加祥, 黄凯, 王曦. 一种金刚石基异质集成氮化镓薄膜与晶体管的微电子器件及其制备方法. CN: CN111540684A, 2020-08-14.
[115] 欧欣, 梁好, 林家杰, 游天桂, 王庶民. 一种硅基无磷激光器及其制备方法. CN: CN111564756B, 2022-03-25.
[116] 高波, 陈建国, 吕越, 黄浩, 游天桂, 欧欣, 王镇. 一种磁性掺杂超导薄膜及制备方法和超导转变边沿探测器. CN: CN111575668A, 2020-08-25.
[117] 欧欣, 伊艾伦, 游天桂, 张加祥, 黄凯, 王曦. 一种单光子源的制备方法及单光子源和集成光学器件. CN: CN111564534B, 2021-10-19.
[118] 欧欣, 伊艾伦, 游天桂, 张加祥, 黄凯, 王曦. 一种1550nm波段单光子源的制备方法及单光子源和光学器件. CN: CN111564533B, 2021-06-22.
[119] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 黄凯. 一种高频声波谐振器及其制备方法. CN: CN111416590A, 2020-07-14.
[120] 欧欣, 赵舒燕, 王长, 林家杰, 游天桂. 一种硅基InGaAs激光器衬底的制备方法、衬底和激光器. CN: CN111262127A, 2020-06-09.
[121] 欧欣, 张晓蕾, 王庶民, 岳丽. 一种GaSb基InSb量子点及其制备方法. CN: CN111244761B, 2021-07-02.
[122] 欧欣, 金婷婷, 林家杰, 游天桂, 王庶民. 一种半导体纳米线及场效应晶体管的制备方法. CN: CN111243960A, 2020-06-05.
[123] 欧欣, 林家杰, 游天桂, 金婷婷, 沈正皓. 一种硅基光子集成模块及其制备方法. CN: CN111244227A, 2020-06-05.
[124] 欧欣, 林家杰, 游天桂, 金婷婷, 沈正皓. 一种硅基光子集成模块及其制备方法. CN: CN111244227B, 2023-07-18.
[125] 欧欣, 林家杰, 游天桂, 金婷婷, 沈正皓. 一种硅基激光器及其制备、解理方法. CN: CN111262125B, 2021-05-11.
[126] 欧欣, 陈阳, 黄凯, 李忠旭, 赵晓蒙. 一种多材料共平面的异质集成结构及其制备方法. CN: CN113066749A, 2021-07-02.
[127] 欧欣, 林家杰, 沈正皓, 金婷婷, 游天桂. 一种SiC基InP光子集成模块及其制备方法. CN: CN111146681B, 2022-03-15.
[128] 欧欣, 李忠旭, 黄凯, 陈阳, 赵晓蒙, 鄢有泉. 三维集成层间光互联结构及形成方法. CN: CN112925057A, 2021-06-08.
[129] 欧欣, 李忠旭, 赵晓蒙, 陈阳, 黄凯. 一种制备晶圆级异质集成衬底的设备. CN: CN211150519U, 2020-07-31.
[130] 高波, 吕越, 黄浩, 游天桂, 欧欣, 王镇. 一种超导转变边探测器的制备方法. CN: CN111063788A, 2020-04-24.
[131] 欧欣, 徐文慧, 游天桂, 沈正皓. 氧化镓半导体结构、日盲光电探测器及制备方法. CN: CN111312852B, 2020-10-20.
[132] 欧欣, 徐文慧, 游天桂, 沈正皓. 氧化镓半导体结构、MOSFET器件及制备方法. CN: CN110854062B, 2020-08-11.
[133] 欧欣, 徐文慧, 游天桂, 沈正皓. 氧化镓半导体结构、垂直型氧化镓基功率器件及制备方法. CN: CN111223782B, 2020-10-20.
[134] 欧欣, 鄢有泉, 黄凯, 赵晓蒙, 李忠旭, 陈阳, 游天桂. 一种带底电极的硅基钽酸锂单晶薄膜衬底及其制备方法和应用. CN: CN110867381A, 2020-03-06.
[135] 欧欣, 周鸿燕, 张师斌, 李忠旭, 黄凯, 赵晓蒙. 高频声波谐振器及其制备方法. CN: CN110601674A, 2019-12-20.
[136] 欧欣, 王成立, 张师斌, 周鸿燕, 黄凯. 高频声波谐振器及其制备方法. CN: CN110572135A, 2019-12-13.
[137] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 陈阳, 聂峥. 衬底上薄膜的制备方法. CN: CN110534474A, 2019-12-03.
[138] 欧欣, 张师斌, 周鸿燕, 王成立, 郑鹏程, 黄凯. 一种高频声表面波谐振器及其制备方法. CN: CN110138356A, 2019-08-16.
[139] 黄凯, 欧欣, 赵晓蒙, 李文琴, 李忠旭, 鄢有泉. 含氧单晶薄膜的制备方法. CN: CN110223912A, 2019-09-10.
[140] 欧欣, 林家杰, 金婷婷, 游天桂, 王羲. Ⅲ-Ⅴ族化合物半导体异质键合结构的制备方法. CN: CN112018025A, 2020-12-01.
[141] 欧欣, 伊艾伦, 武震宇. 一种异质集成单晶钻石薄膜的制备方法. CN: CN110970363A, 2020-04-07.
[142] 欧欣, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 李忠旭, 王曦. 异质结构的制备方法. CN: CN109904065A, 2019-06-18.
[143] 欧欣, 黄凯, 李文琴, 赵晓蒙, 鄢有泉, 李忠旭, 王曦. 异质键合结构的制备方法. CN: CN111383915B, 2021-03-23.
[144] 欧欣, 黄凯, 李文琴, 赵晓蒙, 鄢有泉, 李忠旭, 王曦. 异质键合结构翘曲度的调节方法及后处理方法. CN: CN111383914B, 2021-03-19.
[145] 吕越, 黄浩, 贾棋, 游天桂, 伍文涛, 欧欣, 高波, 王镇. 一种利用离子注入实现目标薄膜纵向均匀掺杂的方法. CN: CN109727850A, 2019-05-07.
[146] 欧欣, 伊艾伦, 林家杰, 张师斌, 于庆凯, 谢晓明. 一种Si基衬底异质集成石墨烯的制备方法. CN: CN111217359A, 2020-06-02.
[147] 欧欣, 游天桂, 徐文慧, 郑鹏程, 黄凯, 王曦. 一种氧化镓半导体结构及其制备方法. CN: CN109671612A, 2019-04-23.
[148] 欧欣, 伊艾伦, 游天桂, 黄凯, 王曦. 一种高平坦度异质集成薄膜结构的制备方法. CN: CN109671618A, 2019-04-23.
[149] 欧欣, 伊艾伦, 游天桂, 黄凯, 王曦. 一种硅基异质集成碳化硅薄膜结构的制备方法. CN: CN109686656A, 2019-04-26.
[150] 欧欣, 伊艾伦, 游天桂, 黄凯, 王曦. 一种硅基异质集成4H-SiC外延薄膜结构的制备方法. CN: CN109678106A, 2019-04-26.
[151] 欧欣, 黄浩, 张师斌, 游天桂. 半导体陷光结构及其制备方法. CN: CN111081811B, 2021-04-02.
[152] 欧欣, 鄢有泉, 黄凯, 李忠旭, 游天桂, 王曦. 异质薄膜结构的制备方法. CN: CN110880920B, 2021-01-19.
[153] 欧欣, 林家杰, 张师斌, 伊艾伦, 周鸿燕, 王成立, 王曦. 柔性半导体复合薄膜及其制备方法. CN: CN109192670A, 2019-01-11.
[154] 欧欣, 张师斌, 周鸿燕, 黄凯, 王成立, 王曦. 基于应力补偿制备柔性单晶薄膜的方法及柔性单晶薄膜. CN: CN109166792A, 2019-01-08.
[155] 欧欣, 张师斌, 林家杰, 黄浩, 游天桂, 黄凯, 王曦. 可调控电磁波吸收的超材料晶体结构及其制备方法. CN: CN110632687A, 2019-12-31.
[156] 欧欣, 林家杰, 黄凯, 游天桂, 王曦. 异质薄膜复合结构及其制备方法. CN: CN110391131A, 2019-10-29.
[157] 欧欣, 张师斌, 黄凯, 游天桂, 王曦. 基于单晶压电薄膜的声波谐振器及其制备方法. CN: CN108493326A, 2018-09-04.
[158] 欧欣, 黄凯, 鄢有泉, 游天桂, 王曦. 一种薄膜异质结构的制备方法. CN: CN108493334A, 2018-09-04.
[159] 欧欣, 黄凯, 鄢有泉, 游天桂, 王曦. 一种薄膜异质结构的制备方法. CN: CN108336219A, 2018-07-27.
[160] 欧欣, 鄢有泉, 黄凯, 游天桂, 王曦. 单晶压电薄膜异质衬底的制备方法. CN: CN110137341A, 2019-08-16.
[161] 欧欣, 尤立星, 贾棋, 张伟君. 一种调控超导纳米线的单光子探测器及其制备方法. CN: CN107910400A, 2018-04-13.
[162] 欧欣, 王庶民, 王畅, 游天桂, 张焱超, 黄凯, 王利娟, 林家杰, 潘文武. 一种异质结构的制备方法. CN: CN109427538A, 2019-03-05.
[163] 欧欣, 李忠旭, 黄凯, 赵晓蒙, 李文琴, 鄢有泉, 陈阳. 一种薄膜体声波谐振器的制备方法. CN: CN107508569B, 2021-06-01.
[164] 欧欣, 张润春, 龚谦, 游天桂, 黄凯, 王曦. Ge复合衬底、衬底外延结构及其制备方法. CN: CN107195534A, 2017-09-22.
[165] 黄凯, 欧欣, 张润春, 游天桂, 王曦. 晶圆键合方法及异质衬底制备方法. CN: CN106711027A, 2017-05-24.
[166] 欧欣, 林家杰, 游天桂, 黄凯. 一种InP薄膜异质衬底的制备方法. CN: CN106711026A, 2017-05-24.
[167] 欧欣, 龚谦, 游天桂, 黄凯, 林家杰, 张润春. 一种大尺寸III‑V异质衬底的制备方法. CN: CN106653583A, 2017-05-10.
[168] 欧欣, 黄凯, 贾棋, 游天桂, 王曦. 一种离子注入剥离制备半导体材料厚膜的方法. CN: CN105895576A, 2016-08-24.
[169] 欧欣, 黄凯, 贾棋, 张师斌, 游天桂, 王曦. 利用薄膜转移技术制备薄膜体声波器件的方法. CN: CN106209003A, 2016-12-07.
[170] 欧欣, 游天桂, 黄凯, 贾棋, 伊艾伦, 王曦. 利用离子注入剥离技术制备单晶氧化物阻变存储器的方法. CN: CN105895801A, 2016-08-24.
[171] 欧欣, 黄凯, 贾棋, 游天桂, 王曦. 一种用于制造支撑衬底上的单晶材料薄层结构的方法. CN: CN105957831A, 2016-09-21.
[172] 欧欣, 黄凯, 贾棋, 王曦. 一种InP薄膜复合衬底的制备方法. CN: CN105374664A, 2016-03-02.
[173] 欧欣, 贾棋, 黄凯, 王曦. 一种相变型氧化钒材料及其制备方法. CN: CN105088166A, 2015-11-25.
[174] 欧欣, 斯蒂芬·福斯柯, 贾棋, 王曦. 一种纳米图形化方法. CN: CN104986722A, 2015-10-21.
[175] 欧欣, 贾棋, 斯蒂芬·福斯柯, 王曦. 一种高线密度极紫外多层膜闪耀光栅的制备方法. CN: CN105068166A, 2015-11-18.
[176] 欧欣, 贾棋, 斯蒂芬·福斯柯, 王曦. 一种大面积纳米阵列的制备方法. CN: CN104986728A, 2015-10-21.
[177] 欧欣, 王曦, 张苗. 制备绝缘体上硅材料的内热氧化方法. CN: CN101388331A, 2009-03-18.
[178] 王曦, 孙佳胤, 陈静, 武爱民, 欧欣. 用于氮化镓外延生长的衬底材料及制备方法. CN: CN101106161A, 2008-01-16.
[179] 欧欣, 王曦, 陈静, 孙佳胤, 武爱民. 采用金属键合工艺实现氮化镓发光二极管垂直结构的方法. CN: CN101005110A, 2007-07-25.
[180] 欧欣, 姚虎林, 张师斌. 声表面波谐振器的热仿真方法、装置及存储介质. CN: CN119227383A, 2024-12-31.
[181] 欧欣, 何炬星, 张师斌, 郑鹏程, 房晓丽. 一种基于异质集成压电衬底的声表面波单向发射结构. CN: CN119254176A, 2025-01-03.
[182] 欧欣, 何炬星, 张师斌, 郑鹏程, 孙米静. 一种基于异质集成压电衬底的叉指电容. CN: CN119254175A, 2025-01-03.
[183] 欧欣, 隋东辰, 张师斌, 郑鹏程. 一种兰姆波谐振器及其制备方法. CN: CN119254174A, 2025-01-03.
[184] 欧欣, 肖杰, 张师斌, 姚虎林, 郑鹏程. 一种可重构的声学波导. CN: CN118212907A, 2024-06-18.
[185] 欧欣, 隋东辰, 张师斌, 郑鹏程, 孙米静. 一种复合衬底的电声换能结构及其制备方法和应用. CN: CN118209628A, 2024-06-18.
[186] 欧欣, 田雪娣, 张师斌, 郑鹏程, 姚虎林. 一种声学谐振器及其制备方法和应用. CN: CN118249770A, 2024-06-25.
[187] 欧欣, 房晓丽, 张师斌, 郑鹏程, 孙米静. 一种悬空型的兰姆波器件. CN: CN118017963A, 2024-05-10.
[188] 欧欣, 蔡佳辰, 周李平, 王成立. 一种单片集成高速调制硅基光芯片及制备方法. CN: CN117908186A, 2024-04-19.
[189] 欧欣, 周李平, 蔡佳辰, 王成立. 一种钽酸锂-氮化硅光电芯片的制备方法及光电芯片. CN: CN118039727A, 2024-05-14.
[190] 欧欣, 蔡佳辰, 王成立, 周李平. 一种异质集成光学芯片及其制备方法. CN: CN118091996A, 2024-05-28.
[191] 欧欣, 王成立, 蔡佳辰. 一种片上波导的形成方法及光子芯片. CN: CN117872529A, 2024-04-12.
[192] 欧欣, 杨秉承, 王成立, 蔡佳辰. 一种光子芯片的制备方法及光子芯片. CN: CN117872530A, 2024-04-12.
[193] 欧欣, 周李平, 蔡佳辰. 一种光子结构的形成方法、光子结构及光子芯片. CN: CN117970568A, 2024-05-03.
[194] 欧欣, 蔡佳辰, 王成立. 基于钽酸锂的电光调制器件及制备方法. CN: CN117950214A, 2024-04-30.
[195] 欧欣, 王成立, 蔡佳辰. 一种电光调制器及其制备方法. CN: CN118091995A, 2024-05-28.
[196] 欧欣, 蔡佳辰, 王成立, 周李平. 一种光学频率梳产生装置、光学系统及光电设备. CN: CN117950242A, 2024-04-30.
[197] 欧欣, 王成立, 蔡佳辰. 模式交叉抑制的集成光子芯片、制备方法器件及设备. CN: CN118131391A, 2024-06-04.
[198] 欧欣, 王成立, 蔡佳辰. 一种集成光子芯片及其制备方法. CN: CN118112716A, 2024-05-31.
[199] 欧欣, 王成立, 蔡佳辰. 一种单片集成电光调制器及制备方法. CN: CN117950215A, 2024-04-30.
[200] 欧欣, 姚虎林, 张师斌, 郑鹏程, 隋东辰. 一种声表面波谐振器、声表面波滤波器和双工器. CN: CN117997301A, 2024-05-07.
[201] 欧欣, 孙米静, 张师斌, 郑鹏程, 何炬星. 一种声表面波传感器. CN: CN117782179A, 2024-03-29.
[202] 游天桂, 丁佳欣, 欧欣, 石航宁, 覃晴程. 一种晶圆键合方法. CN: CN117637476A, 2024-03-01.
[203] 游天桂, 丁佳欣, 欧欣, 石航宁, 刘旭冬. 一种GaN衬底的制备方法. CN: CN117711925A, 2024-03-15.
[204] 游天桂, 宋秋冬, 伊艾伦, 欧欣, 杨义. 一种氟化钙单晶材料的表面处理方法. CN: CN117512777A, 2024-02-06.
[205] 游天桂, 宋秋冬, 伊艾伦, 王成立, 欧欣. 一种异质集成结构及制备方法. CN: CN117572561A, 2024-02-20.
[206] 欧欣, 赵天成, 徐文慧, 游天桂, 瞿振宇. 金刚石基氧化镓半导体结构及其制备方法. CN: CN117577518A, 2024-02-20.
[207] 游天桂, 覃晴程, 欧欣, 石航宁, 刘旭冬. 一种异质衬底的制备方法及异质衬底、半导体器件. CN: CN117373912A, 2024-01-09.
[208] 欧欣, 杨秉承, 伊艾伦, 周李平. 一种用于拉曼激光器的碳化硅光子器件制备方法. CN: CN117518714A, 2024-02-06.
[209] 欧欣, 杨秉承, 伊艾伦, 周李平. 一种用于端面耦合的碳化硅光子芯片分离方法. CN: CN117608029A, 2024-02-27.
[210] 欧欣, 石航宁, 游天桂, 覃晴程, 伊艾伦. 一种N极性氮化镓电子器件的制备方法及器件. CN: CN117293032A, 2023-12-26.
[211] 欧欣, 石航宁, 游天桂, 丁佳欣, 伊艾伦. 一种Ga极性氮化镓电子器件的制备方法及器件. CN: CN117293031A, 2023-12-26.
[212] 欧欣, 刘旭冬, 石航宁, 游天桂, 覃晴程. 一种基于翘区的异质集成剥离方法. CN: CN117293019A, 2023-12-26.
[213] 游天桂, 覃晴程, 欧欣, 石航宁, 丁佳欣. 异质集成结构制备方法、异质集成结构及半导体集成器件. CN: CN117153674A, 2023-12-01.
[214] 游天桂, 刘旭冬, 欧欣, 石航宁, 覃晴程. 一种异质键合结构、半导体器件及其制备方法. CN: CN117153673A, 2023-12-01.
[215] 欧欣, 石航宁, 游天桂, 覃晴程, 刘旭冬. 一种异质键合结构制备方法、异质键合结构及半导体器件. CN: CN117080122A, 2023-11-17.
[216] 张加祥, 朱一帆, 欧欣, 伊艾伦, 秦源浩. 一种碳化硅微盘谐振器、制备方法及光通信设备. CN: CN116880009A, 2023-10-13.
[217] 张加祥, 朱一帆, 欧欣, 伊艾伦, 秦源浩. 一种碳化硅微盘谐振器、制备方法及光通信设备. CN: CN116880009B, 2024-07-02.
[218] 张加祥, 秦源浩, 欧欣, 伊艾伦, 朱一帆. 一种基于应力调控的片上双碳化硅色心HOM干涉装置. CN: CN117008252A, 2023-11-07.
[219] 张加祥, 秦源浩, 欧欣, 伊艾伦, 朱一帆. 一种基于碳化硅色心的声表面波器件及其制备和应用. CN: CN117394813A, 2024-01-12.
[220] 张加祥, 秦源浩, 欧欣, 伊艾伦, 朱一帆. 一种基于碳化硅色心的牛眼腔双轴应力调控装置及其制备方法. CN: CN117008320A, 2023-11-07.
[221] 伊艾伦, 欧欣, 蔡佳辰, 王成立. 一种基于碳化硅载流子的光调制器制备方法及光调制器. CN: CN116819805A, 2023-09-29.
[222] 伊艾伦, 欧欣, 蔡佳辰, 王成立. 一种基于碳化硅的调制器件制备方法及调制器件. CN: CN116837463A, 2023-10-03.
[223] 伊艾伦, 欧欣, 周民. 双极型功率器件及其制备方法. CN: CN116741634A, 2023-09-12.
[224] 伊艾伦, 欧欣, 蔡佳辰, 王成立. 一种基于碳化硅的调制器件制备方法及调制器件. CN: CN116837463B, 2024-06-28.
[225] 伊艾伦, 欧欣, 周民. 一种硅基氮化镓HEMT器件及其制备方法. CN: CN116705605B, 2024-06-18.
[226] 伊艾伦, 欧欣, 蔡佳辰, 王成立. 一种器件的制备方法及结构. CN: CN116774469B, 2024-06-28.
[227] 伊艾伦, 欧欣, 周民. 半导体器件的制备方法及半导体器件. CN: CN116741639A, 2023-09-12.
[228] 伊艾伦, 欧欣, 蔡佳辰, 王成立. 一种基于碳化硅载流子的光调制器制备方法及光调制器. CN: CN116819805B, 2024-05-28.
[229] 伊艾伦, 欧欣, 蔡佳辰, 王成立. 一种器件的制备方法及结构. CN: CN116774469A, 2023-09-19.
[230] 欧欣, 石航宁, 游天桂, 伊艾伦, 覃晴程. 一种氮化镓电流孔径垂直型电子器件的制备方法. CN: CN116759312A, 2023-09-15.
[231] 欧欣, 吴进波, 张师斌, 郑鹏程, 房晓丽. 一种声波谐振器的制备方法及声波谐振器. CN: CN116599481B, 2025-01-07.
[232] 欧欣, 吴进波, 张师斌, 张丽萍, 姚虎林. 一种高频声波谐振器及其制备方法. CN: CN116781033A, 2023-09-19.
[233] 欧欣, 蔡佳辰, 伊艾伦, 王成立. 一种基于声光耦合的非互易性波导器件及制备方法和应用. CN: CN116755265A, 2023-09-15.
[234] 欧欣, 蔡佳辰, 伊艾伦, 王成立. 一种微环型声光调制器及制备方法. CN: CN116736600A, 2023-09-12.
[235] 欧欣, 周李平, 伊艾伦, 王成立, 杨秉承. 一种自干涉光学微谐振腔及其调控方法. CN: CN116736445A, 2023-09-12.
[236] 欧欣, 姚虎林, 张师斌, 隋东辰. 一种声表面波器件的仿真方法、装置、电子设备及存储介质. CN: CN116401995B, 2024-04-12.
[237] 欧欣, 徐文慧, 游天桂, 沈正皓, 瞿振宇. 基于异质集成的氧化镓cascade结构及制备方法. CN: CN115831877B, 2023-09-05.
[238] 张加祥, 欧炜文, 欧欣, 朱一帆, 王旭东. 一种混合集成量子光源LED器件的制备方法. CN: CN115332404B, 2024-11-08.
[239] 欧欣, 朱一帆, 张加祥, 陈阳, 王成立. 一种能够控制铌酸锂波导侧壁倾角的刻蚀方法. CN: CN115356806B, 2024-12-06.
[240] 欧欣, 吴进波, 张师斌, 郑鹏程, 张丽萍. 一种高频声波谐振器及应用其的滤波器. CN: CN115021705B, 2024-04-09.
[241] 欧欣, 郑鹏程, 张师斌, 吴进波, 张丽萍. 一种纵向泄漏声表面波谐振器的结构及滤波器. CN: CN115001438B, 2024-07-02.
[242] 欧欣, 房晓丽, 张师斌, 郑鹏程. 一种声波谐振器的制备方法及其结构、滤波器. CN: CN115296636B, 2024-07-16.
[243] 欧欣, 姚虎林, 张师斌. 一种声表面波谐振器. CN: CN114337582B, 2024-06-11.
[244] 欧欣, 姚虎林, 张师斌. 一种声表面波谐振器. CN: CN114337583B, 2024-03-29.
[245] 欧欣, 张丽萍, 张师斌, 郑鹏程, 吴进波. 一种声波谐振器. CN: CN114362710B, 2024-03-29.
[246] 欧欣, 张丽萍, 张师斌, 郑鹏程, 周鸿燕. 一种声波谐振器及其制备方法. CN: CN114362705B, 2024-04-02.
[247] 欧欣, 姚虎林, 张师斌, 郑鹏程, 吴进波. 一种声学谐振器及其制备方法. CN: CN114362709B, 2024-04-05.
[248] 欧欣, 周鸿燕, 张师斌. 一种单片集成声波滤波阵列及其制备方法. CN: CN114362719B, 2024-04-05.
[249] 欧欣, 郑鹏程, 张师斌, 吴进波, 张丽萍. 一种声波谐振器及其制备方法. CN: CN113922784B, 2024-04-05.
[250] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 张丽萍. 一种声波滤波器. CN: CN113708739B, 2024-06-18.
[251] 欧欣, 房晓丽, 郑鹏程, 张师斌, 张丽萍. 一种兰姆波器件及其制备方法. CN: CN113676150B, 2024-07-16.
[252] 欧欣, 张丽萍, 张师斌, 周鸿燕, 吴进波. 固态装配型横向振荡声波谐振器. CN: CN113630101B, 2024-05-24.
[253] 欧欣, 吴进波, 张师斌, 周鸿燕, 郑鹏程. 一种声波谐振器及其制备方法. CN: CN113541636B, 2024-03-01.
[254] 欧欣, 吴进波, 张师斌, 张丽萍, 郑鹏程. 体声波谐振器及其制备方法. CN: CN113381724B, 2024-05-24.
[255] 欧欣, 吴进波, 张师斌, 周鸿燕, 张丽萍. 一种弹性波谐振器及其制备方法. CN: CN113328723B, 2024-06-14.
[256] 欧欣, 周李平, 伊艾伦, 游天桂. 一种钻石晶体的异质键合方法及异质结构. CN: CN113284839B, 2024-07-02.
[257] 欧欣, 王成立, 伊艾伦, 沈晨, 张加祥. 一种光学微纳结构的制备方法. CN: CN113120857B, 2024-07-02.
[258] 欧欣, 王成立, 张师斌, 伊艾伦, 郑鹏程. 一种多层异质单晶薄膜衬底的制备方法. CN: CN113130376B, 2024-04-09.
[259] 欧欣, 张丽萍, 张师斌, 周鸿燕, 吴进波. 一种声波谐振器及其制备方法. CN: CN112688657B, 2024-11-19.
[260] 欧欣, 石航宁, 游天桂, 周李平, 徐文慧. 复合异质集成半导体结构、半导体器件及制备方法. CN: CN112530855B, 2024-04-12.
[261] 欧欣, 孙嘉良, 林家杰, 游天桂. 一种异质薄膜结构及其制备方法. CN: CN112382559B, 2024-06-11.
[262] 欧欣, 池超旦, 林家杰, 游天桂. 一种Si基InGaAs光电探测器的制备方法及光电探测器. CN: CN111653649B, 2023-09-05.
[263] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 黄凯. 一种高频声波谐振器及其制备方法. CN: CN111416590B, 2023-09-29.
[264] 欧欣, 郑鹏程, 张师斌, 周鸿燕, 黄凯. 一种兰姆波谐振器及其制备方法. CN: CN111431501B, 2023-09-29.
[265] 欧欣, 伊艾伦, 林家杰, 张师斌, 于庆凯, 谢晓明. 一种Si基衬底异质集成石墨烯的制备方法. CN: CN111217359B, 2023-11-07.

   

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[161] Zhou, HongBo, Ou, Xin, Zhang, Ying, Shu, Xiaolin, Liu, YueLin, Lu, GuangHong. Effect of carbon on helium trapping in tungsten: A first-principles investigation. JOURNAL OF NUCLEAR MATERIALS[J]. 2013, 第 2 作者440(1-3): 338-343, http://dx.doi.org/10.1016/j.jnucmat.2013.05.070.
[162] Zhou, HongBo, Zhang, Ying, Ou, Xin. Dissolution and diffusion behaviors of hydrogen in copper: A first-principles investigation. COMPUTATIONAL MATERIALS SCIENCE[J]. 2013, 第 3 作者79: 923-928, http://dx.doi.org/10.1016/j.commatsci.2013.08.002.
[163] Prucnal, Slawomir, Zhou, Shengqiang, Ou, Xin, Reuther, Helfried, Liedke, Maciej Oskar, Muecklich, Arndt, Helm, Manfred, Zuk, Jerzy, Turek, Marcin, Pyszniak, Krzysztof, Skorupa, Wolfgang. InP nanocrystals on silicon for optoelectronic applications. NANOTECHNOLOGY[J]. 2012, 第 3 作者23(48): https://www.webofscience.com/wos/woscc/full-record/WOS:000311138100009.
[164] Koegler, R, Anwand, W, Richter, A, Butterling, M, Ou, Xin, Wagner, A, Chen, C L. Nanocavity formation and hardness increase by dual ion beam irradiation of oxide dispersion strengthened FeCrAl alloy. JOURNAL OF NUCLEAR MATERIALS[J]. 2012, 第 5 作者427(1-3): 133-139, http://dx.doi.org/10.1016/j.jnucmat.2012.04.029.
[165] Shuai, Yao, Ou, Xin, Wu, Chuangui, Zhang, Wanli, Zhou, Shengqiang, Buerger, Danilo, Reuther, Helfried, Slesazeck, Stefan, Mikolajick, Thomas, Helm, Manfred, Schmidt, Heidemarie. Substrate effect on the resistive switching in BiFeO3 thin films. JOURNAL OF APPLIED PHYSICS[J]. 2012, 第 2 作者111(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000303282401200.
[166] Buerger, Danilo, Zhou, Shengqiang, Hoewler, Marcel, Ou, Xin, Kovacs, Gyoergy J, Reuther, Helfried, Muecklich, Arndt, Skorupa, Wolfgang, Helm, Manfred, Schmidt, Heidemarie. Hysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet. APPLIED PHYSICS LETTERS[J]. 2012, 第 4 作者100(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000298966200039.
[167] Ou, Xin, Koegler, Reinhard, Zhou, HongBo, Anwand, Wolfgang, Grenzer, Joerg, Huebner, Rene, Voelskow, Matthias, Butterling, Maik, Zhou, Shengqiang, Skorupa, Wolfgang. Release of helium from vacancy defects in yttria-stabilized zirconia under irradiation. PHYSICAL REVIEW B[J]. 2012, 第 1 作者  通讯作者  86(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000311910900003.
[168] Ou, Xin, Koegler, Reinhard, Wei, Xing, Muecklich, Arndt, Wang, Xi, Skorupa, Wolfgang, Facsko, Stefan. Fabrication of horizontal silicon nanowire arrays on insulator by ion irradiation. AIP ADVANCES[J]. 2011, 第 1 作者  通讯作者  1(4): http://ir.sim.ac.cn/handle/331004/115088.
[169] Ou, Xin, Geyer, Nadine, Koegler, Reinhard, Werner, Peter, Skorupa, Wolfgang. Acceptor deactivation in individual silicon nanowires: From thick to ultrathin. APPLIED PHYSICS LETTERS[J]. 2011, 第 1 作者  通讯作者  98(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000292039900053.
[170] 欧欣, 陈静, 武爱民, 孙家胤. 采用金-金键合工艺制备垂直结构氮化镓发光二极管（英文）. 功能材料与器件学报[J]. 2010, 第 1 作者http://ir.sim.ac.cn/handle/331004/52460.
[171] Ou, Xin, Das Kanungo, Pratyush, Koegler, Reinhard, Werner, Peter, Goesele, Ulrich, Skorupa, Wolfgang, Wang, Xi. Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy. NANO LETTERS[J]. 2010, 第 1 作者  通讯作者  10(1): 171-175, http://ir.sim.ac.cn/handle/331004/94739.
[172] Ou, Xin, Das Kanungo, Pratyush, Koegler, Reinhard, Werner, Peter, Goesele, Ulrich, Skorupa, Wolfgang, Wang, Xi. Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy. ADVANCED MATERIALS[J]. 2010, 第 1 作者  通讯作者  22(36): 4020-4024, http://www.irgrid.ac.cn/handle/1471x/327555.
[173] Ou Xin, Chen Jing, Wu Aimin, Sun Jiayin. Au-Au Wafer Bonding in Vertical-Structure GaN LED Fabrication. JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES[J]. 2010, 第 1 作者16(3): 276-280, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=3921052&detailType=1.
[174] 欧欣. 应用于SIMOX工艺中的缺陷工程. 2010, 第 1 作者http://ir.sim.ac.cn/handle/331004/82437.
[175] Ou, Xin, Koegler, Reinhard, Skorupa, Wolfgang, Moeller, Wolfhard, Wang, Xi, Gerlach, Juergen W. Gettering layer for oxygen accumulation in the initial stage of SIMOX processing. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS[J]. 2009, 第 1 作者  通讯作者  267(8-9): 1273-1276, http://dx.doi.org/10.1016/j.nimb.2009.01.029.
[176] Ou, Xin, Koegler, Reinhard, Muecklich, Arndt, Skorupa, Wolfgang, Moeller, Wolfhard, Wang, Xi, Vines, Lasse. The use of nanocavities for the fabrication of ultrathin buried oxide layers. APPLIED PHYSICS LETTERS[J]. 2009, 第 1 作者  通讯作者  94(1): http://ir.sim.ac.cn/handle/331004/94802.
[177] Ou, Xin, Koegler, Reinhard, Muecklich, Arndt, Skorupa, Wolfgang, Moeller, Wolfhard, Wang, Xi, Gerlach, Juergen W, Rauschenbach, Bernd. Efficient oxygen gettering in Si by coimplantation of hydrogen and helium. APPLIED PHYSICS LETTERS[J]. 2008, 第 1 作者  通讯作者  93(16): http://ir.sim.ac.cn/handle/331004/95026.
[178] Koegler, R, Ou, Xin, Skorupa, W, Moeller, W. The origin of the energy-dose window in separation-by-implanted-oxygen materials processing. APPLIED PHYSICS LETTERS[J]. 2008, 第 2 作者92(18): https://www.webofscience.com/wos/woscc/full-record/WOS:000256485700021.
[179] Ou, Xin, Keller, Adrian, Helm, Manfred, Fassbender, Jürgen, Facsko, Stefan. Reverse epitaxy of Ge: ordered and facetted surface patterns. 第 1 作者http://arxiv.org/abs/1303.5133.

（1） Subsecond Annealing of Advanced Materials, Springer, 2014-01, 第 5 作者

   

（ 1 ） 基于碳基异质衬底的高品质声学器件集成技术, 负责人, 国家任务, 2023-06--2027-06
（ 2 ） 基于智能剥离技术的晶圆级异质集成材料与器件, 负责人, 国家任务, 2023-01--2027-12
（ 3 ） 面向集成光电芯片应用的碳化硅薄膜物态调控研究, 负责人, 国家任务, 2022-12--2027-11
（ 4 ） 基于多物理场异质结效应的超级声表面波5G射频滤波器研制, 负责人, 国家任务, 2022-11--2024-10
（ 5 ） 跨能域异质集成技术与宽光谱量子裁剪调控技术, 负责人, 国家任务, 2021-01--2025-01
（ 6 ） 钻石传感器集成与封装技术研究, 负责人, 中国科学院计划, 2020-01--2022-12
（ 7 ） 中科院王宽诚成率先人才计划-卢嘉锡国际团队, 负责人, 中国科学院计划, 2020-01--2023-01
（ 8 ） 硅基压电POI衬底制备与应用, 负责人, 地方任务, 2019-11--2022-11
（ 9 ） “万能离子刀”晶圆级异质集成技术研究, 负责人, 国家任务, 2019-10--2021-09
（ 10 ） 新型SOI材料及应用, 负责人, 地方任务, 2019-05--2022-04
（ 11 ） 基于离子束剥离技术的单晶铌酸锂异质集成薄膜制各及新型表征技术开发, 负责人, 中国科学院计划, 2019-01--2020-12
（ 12 ） 新型红外纳米材料, 负责人, 国家任务, 2019-01--2021-12
（ 13 ） 晶圆级单晶薄膜智能剥离与转移硅基异质集成技术研究, 负责人, 国家任务, 2019-01--2021-12
（ 14 ） 晶圆级硅基氧化镓单晶薄膜异质集成研究, 负责人, 国家任务, 2019-01--2022-12
（ 15 ） MEMS高温热流传感器（SiCOI材料制备）, 负责人, 国家任务, 2018-01--2020-12
（ 16 ） 基于离子注入精准掺杂方法的超导探测器研究, 负责人, 研究所自主部署, 2018-01--2020-12
（ 17 ） 同步辐射超高分辨率光栅器件制备研究, 负责人, 国家任务, 2018-01--2021-12
（ 18 ） 异质巨集成-培育项目, 负责人, 国家任务, 2017-06--2018-06
（ 19 ） 高性能无源敏感薄膜材料Si基异质集成方法及传感器芯片研究, 参与, 国家任务, 2017-06--2020-07
（ 20 ） 第三代半导体的衬底制备及同质外延, 负责人, 国家任务, 2017-06--2021-07
（ 21 ） 高纯SiC衬底制备与离子束剥离研究, 负责人, 地方任务, 2017-06--2020-07
（ 22 ） 硅基GaN材料表征, 负责人, 境内委托项目, 2017-06--2018-07
（ 23 ） 面向后摩尔时代的XOI异质集成材料研究, 参与, 中国科学院计划, 2017-05--2020-05
（ 24 ） 基于离子束技术的信息材料制备与改性研究, 负责人, 国家任务, 2017-01--2019-12
（ 25 ） 中科院****择优支持, 负责人, 中国科学院计划, 2016-01--2018-12

（1）Heterogeneous Integration XOI-Materials for Photonic Integrated Circuit and Acoustic RF Filter    Xin Ou   2023-12-08
（2）Heterogeneous integration for 5G RF filter technology    Xin Ou   2023-10-13
（3）Silicon carbide for integrated photonics   第六届微纳光学技术与应用交流会   欧欣   2022-12-12
（4）Universal“Ion-cut” for Nanopatterning, modification and heterointegration of semiconductors   2018-09-18
（5）Heterogeneous Integration of LiNbO3 on Si Substrate by Ion Cut   2016-10-30
（6） “Reverse Epitaxy with low energy ion irradiation: Mechanism, Experiments and Applications”       2016-10-30
（7）Nanopatterning on semiconductor surfaces by reverse epitaxy   2016-07-25
（8）Ion-Surface interaction in reverse epitaxy   2015-12-08
（9）“Reverse epitaxy”   2015-10-24

已指导学生

张润春  硕士研究生  085209-集成电路工程  

周鸿燕  博士研究生  080903-微电子学与固体电子学  

张师斌  博士研究生  080903-微电子学与固体电子学  

林家杰  博士研究生  080903-微电子学与固体电子学  

张丽萍  博士研究生  080903-微电子学与固体电子学  

王成立  博士研究生  080903-微电子学与固体电子学  

池超旦  博士研究生  080903-微电子学与固体电子学  

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柯新建  博士研究生  080903-微电子学与固体电子学  

蔡佳辰  博士研究生  080903-微电子学与固体电子学  

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何炬星  博士研究生  080903-微电子学与固体电子学  

王绪强  硕士研究生  080903-微电子学与固体电子学  

杨天遥  博士研究生  080903-微电子学与固体电子学  

张凡  博士研究生  080903-微电子学与固体电子学  

赵天成  博士研究生  080903-微电子学与固体电子学