080903-微电子学与固体电子学
080300-光学工程

碲镉汞红外探测器的器件物理，器件设计，制备和表征

2012-09--2017-07   中国科学院上海硅酸盐研究所   博士/工学博士
2012-09--2013-07   中国科学技术大学   研究生课程学业证明书
2008-09--2012-07   南昌大学   本科/工学学士

   

[1] Han, Xuepeng, Guo, Huijun, Yang, Liao, Zhu, Liqi, Yang, Dan, Xie, Hao, Wang, Fang, Chen, Lu, Chen, Baile, He, Li. Dark current and noise analysis for Long-wavelength infrared HgCdTe avalanche photodiodes. INFRARED PHYSICS & TECHNOLOGY[J]. 2022, 123: [2] Zhu, Liqi, Guo, Huijun, Deng, Zhuo, Yang, Liao, Huang, Jian, Yang, Dan, Zhou, Zhiqi, Shen, Chuan, Chen, Lu, Lin, Chun, Chen, Baile. Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared E-Avalanche Photodiode. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS[J]. 2022, 28(2): [3] Huijun Guo, Lu Chen, Liao Yang, Dan Yang, Chuan Shen, Quanzhi Sun, Honglei Chen, Chun Lin, Ruijun Ding, Li He. The Latest Developments of HgCdTe e-APDs at SITP. Proceedings of SPIE, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 2020, Vol.11717: 1171736[J]. 2020, [4] 程雨顺, 郭慧君, 李浩, 陈路, 林春, 何力. 碲镉汞APD平面型PIN结构仿真设计研究. 红外毫米波学报[J]. 2019, [5] Huijun Guo, Yushun Cheng, Lu Chen, Chun Lin, Hao Li, Honglei Chen, Ruijun Ding, Li He. The performance of mid-wave infrared HgCdTe e-avalanche photodiodes at SITP. SPIE Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111702M (2019)[J]. 2019, [6] Cheng Yushun, Chen Lu, Guo Huijun, Lin Chun, He Li. Improved local field model for HgCdTe electron avalanche photodiode. INFRARED PHYSICS & TECHNOLOGY[J]. 2019, 101: 156-161, http://dx.doi.org/10.1016/j.infrared.2019.07.002.
[7] Huijun Guo, Wei Huang, Jun Peng, Ren-Wei Zhou, Xue-Chao Liu, Yan-Qing Zheng, Er-Wei shi. Study of Ehrlich-Schwoebel barrier in 4H-SiC epitaxial growths by molecular statics method. Materials Science Forum[J]. 2016, 858: 217-220, [8] Guo, HuiJun, Huang, Wei, Liu, Xi, Gao, Pan, Zhuo, ShiYi, Xin, Jun, Yan, ChengFeng, Liu, XueChao, Zheng, YanQing, Yang, JianHua, Shi, ErWei. A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide. COMPUTATIONAL MATERIALS SCIENCE[J]. 2015, 100(Pt.B): 159-165, http://dx.doi.org/10.1016/j.commatsci.2014.11.056.
[9] Guo, HuiJun, Huang, Wei, Liu, Xi, Gao, Pan, Zhuo, ShiYi, Xin, Jun, Yan, ChengFeng, Zheng, YanQing, Yang, JianHua, Shi, ErWei. Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations. AIP ADVANCES[J]. 2014, 4(9): https://doaj.org/article/6e8da12396f845c98a611630ec76372d.

   

（ 1 ） 线性模式中波红外碲镉汞电子雪崩光电二极管器件工艺及其噪声机理研究, 负责人, 地方任务, 2018-05--2021-04
（ 2 ） 人工微结构集成的高带宽碲镉汞线性雪崩探测器研究, 负责人, 国家任务, 2022-01--2024-12
（ 3 ） 碲镉汞高工作温度短波线性雪崩器件特性研究, 负责人, 国家任务, 2022-01--2025-12

（1）HgCdTe雪崩焦平面探测器的发展与应用   第二十四届全国激光学术会议暨第十五届全国激光技术与光电子学学术会议   2020-10-17
（2）HgCdTe线性模式APD焦平面器件概述   第十四届全国激光与光电子学学术会议暨2018中国光学十大进展发布会   2019-03-17