2005-09--2010-06   中国科学院研究生院   工学博士学位
2001-09--2005-06   复旦大学材料科学系   理学学士

   

2015-01~现在, 中国科学院半导体研究所, 副研究员
2013-11~2014-12,美国加州大学洛杉矶分校, 访问学者
2010-07~2013-11,中国科学院半导体研究所, 助理研究员
2005-09~2010-06,中国科学院研究生院, 工学博士学位
2001-09~2005-06,复旦大学材料科学系, 理学学士

化合物半导体材料生长与表征

   

（1） Single-pixel p-graded-n junction spectrometers, NATURE COMMUNICATIONS, 2024, 第 10 作者
（2） High-Speed Photodetector With Simultaneous Electrical Power Generation, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2023, 第 7 作者
（3） 分子束外延GaAs/Si（001）材料反相畴的湮灭机理, Annihilation Mechanism of Antiphase Domains in GaAs/Si(001)Materials Grown by Molecular Beam Epitaxy, 中国激光, 2022, 第 13 作者
（4） High-Speed 850 nm Photodetector for Zero-Bias Operation, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2022, 第 5 作者
（5） Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition, Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition*, CHINESE PHYSICS B, 2021, 第 3 作者
（6） Design optimization of silicon-based 1.55 mu m InAs/InGaAs quantum dot square microcavity lasers with output waveguides, LASER PHYSICS, 2021, 第 11 作者
（7） Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots, Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots*, CHINESE PHYSICS B, 2021, 第 10 作者
（8） Low-threshold, single-transverse-mode, 940-nm vertical-cavity surface-emitting laser with a mode filter and half-wavelength cavity, QUANTUM ELECTRONICS, 2020, 
（9） Fabrication and Characterization of a High-Power Assembly With a 20-Junction Monolithically Stacked Laser Power Converter, IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 第 3 作者  通讯作者
（10） InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 第 6 作者
（11） Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, NANO LETTERS, 2016, 第 5 作者
（12） Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm, APPLIED PHYSICS LETTERS, 2016, 第 3 作者
（13） Pushing Detection Wavelength Toward 1 mu m by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers, IEEE ELECTRON DEVICE LETTERS, 2016, 第 8 作者
（14） InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, NANOTECHNOLOGY, 2016, 第 6 作者
（15） Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 第 3 作者
（16） Pushing Detection Wavelength Toward 1 ��m by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers, IEEE ELECTRON DEVICE LETTERS, 2016, 第 8 作者
（17） 2004 nm Ridge Waveguide Distributed Feedback Lasers with InGaAs Multi-Quantum Wells, IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 第 4 作者
（18） Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, 中国物理快报：英文版, 2016, 第 2 作者
（19） Single-section mode-locked 1.55-mu m InAs/InP quantum dot lasers grown by MOVPE, OPTICS COMMUNICATIONS, 2016, 第 3 作者
（20） Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, CHINESE PHYSICS LETTERS, 2016, 第 2 作者  通讯作者
（21） Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, NANO LETT., 2016, 第 5 作者
（22） Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating, APPLIED OPTICS, 2015, 第 3 作者
（23） Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate, CRYSTAL GROWTH & DESIGN, 2015, 第 5 作者
（24） Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence, APPLIED PHYSICS LETTERS, 2015, 第 1 作者
（25） Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation, AIP ADVANCES, 2015, 第 2 作者
（26） High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy., OPTICS EXPRESS, 2015, 
（27） Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal, SOLID STATE COMMUNICATIONS, 2015, 第 8 作者
（28） Neutron-irradiation-induced near-infrared emission in alpha-Al2O3, PHILOSOPHICAL MAGAZINE LETTERS, 2014, 第 5 作者
（29） Three-region characteristic temperature in p-doped quantum dot lasers, APPLIED PHYSICS LETTERS, 2014, 第 2 作者
（30） Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD, JOURNAL OF CRYSTAL GROWTH, 2014, 第 4 作者
（31） The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy, JOURNAL OF CRYSTAL GROWTH, 2014, 第 5 作者
（32） Measurement of Linewidth Enhancement Factor for 1.3-mu m InAs/GaAs Quantum Dot Lasers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 第 3 作者
（33） InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition, InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition, Chinese Physics Letters, 2013, 第 2 作者
（34） Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition, JOURNAL OF CRYSTAL GROWTH, 2013, 第 2 作者
（35） Theoretical study of the effects of InAs/GaAs quantum dot layer, APPLIED PHYSICS LETTERS, 2012, 第 3 作者
（36） Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers, OPTICS LETTERS, 2012, 第 2 作者
（37） High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability, OPTICS LETTERS, 2012, 第 2 作者
（38） High-brightness 1.3 ��m InAs/GaAs quantum dot tapered laser with high temperature stability, OPTICS LETTERS, 2012, 第 2 作者
（39） Temperature compensation for threshold current and slope efficiency of 1.3 mu m inas/gaas quantum-dot lasers by facet coating design, CHINESE PHYSICS LETTERS, 2011, 第 3 作者
（40） Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy, SEMICONDUCTORSCIENCEANDTECHNOLOGY, 2011, 第 4 作者
（41） Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots, Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots, Chinese Physics Letters, 2011, 第 5 作者
（42） The research progress of quantum dot lasers and photodetectors in china, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 第 2 作者
（43） Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer, JOURNAL OF APPLIED PHYSICS, 2011, 第 3 作者
（44） 分子束外延生长高速直接调制1·3μmInAs/GaAs量子点激光器, High-speed directly-modulated 1.3-��m InAs/GaAs quantum dot lasers grown by molecular beam epitaxy, 黑龙江大学工程学报, 2011, 第 2 作者
（45） Temperature Compensation for Threshold Current and Slope Efficiency of 1.3µm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design, Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 ��m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design, Chinese Physics Letters, 2011, 第 3 作者
（46） Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model, Numerical study of strained InGaAs quantum well lasers emitting at 2.33 ��m using the eight-band model, Chinese Physics B, 2011, 第 3 作者
（47） Numerical study of strained ingaas quantum well lasers emitting at 2.33 mu m using the eight-band model, CHINESE PHYSICS B, 2011, 第 3 作者
（48） Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots, Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots, 中国物理：英文版, 2010, 第 3 作者
（49） A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser, CHINESE PHYSICS LETTERS, 2010, 第 1 作者
（50） High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, High Characteristic Temperature 1.3��m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, 中国物理快报：英文版, 2010, 第 4 作者
（51） High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, High Characteristic Temperature 1.3��m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, Chinese Physics Letters, 2010, 第 1 作者
（52） High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, CHINESE PHYSICS LETTERS, 2010, 第 1 作者
（53） Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating, APPLIED PHYSICS LETTERS, 2010, 第 4 作者
（54） A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser, A 10Gb/s Directly-Modulated 1.3��m InAs/GaAs Quantum-Dot Laser, Chinese Physics Letters, 2010, 第 1 作者
（55） Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers, JOURNAL OF APPLIED PHYSICS, 2010, 第 3 作者
（56） Impact of symmetrized and Burt–Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots, Impact of symmetrized and burt-foreman hamiltonians on spurious solutions and energy levels of inas/gaas quantum dots, CHINESE PHYSICS B, 2010, 第 3 作者
（57） High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability, PROCEEDINGS OF SPIE-THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING VOL.7844: ART. NO. 784404 2010, 2010, 
（58） Self-heating effect on the two-state lasing behaviors in 1.3-mu m inas-gaas quantum-dot lasers, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 第 1 作者  通讯作者
（59） Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers, ACTA PHYSICA SINICA, 2009, 第 1 作者  通讯作者
（60） p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究, Characteristic study of maximum modal gain of p-doped 1.3 ��m InAs/GaAs quantum dot lasers, 物理学报, 2009, 第 1 作者
（61） Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 第 3 作者

   

（ 1 ） 中国科学院稳定支持基础研究领域青年团队计划“拓扑腔面发射激光芯片”项目, 参与, 中国科学院计划, 2021-06--2026-06
（ 2 ） STS双创引导项目“5G通信用1270nm 25G高速半导体激光芯片外延材料产业化”, 负责人, 中国科学院计划, 2020-01--2020-12