基本信息
季海铭  男    中国科学院半导体研究所
电子邮件: jhm@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号半导体所1号楼409
邮政编码: 100083

招生信息

   
招生专业
080901-物理电子学
招生方向
低维异质结构化合物半导体光电材料,低维异质结构半导体激光器

教育背景

2005-09--2010-06   中国科学院研究生院   工学博士学位
2001-09--2005-06   复旦大学材料科学系   理学学士

工作经历

   
工作简历
2015-01~现在, 中国科学院半导体研究所, 副研究员
2013-11~2014-12,美国加州大学洛杉矶分校, 访问学者
2010-07~2013-11,中国科学院半导体研究所, 助理研究员
2005-09~2010-06,中国科学院研究生院, 工学博士学位
2001-09~2005-06,复旦大学材料科学系, 理学学士

教授课程

化合物半导体材料生长与表征

出版信息

   
发表论文
(1) High-Speed Photodetector With Simultaneous Electrical Power Generation, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2023, 第 7 作者
(2) High-Speed 850 nm Photodetector for Zero-Bias Operation, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2022, 第 5 作者
(3) Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition, Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition*, CHINESE PHYSICS B, 2021, 第 3 作者
(4) Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots, Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots, 中国物理B:英文版, 2021, 第 10 作者
(5) Design optimization of silicon-based 1.55 mu m InAs/InGaAs quantum dot square microcavity lasers with output waveguides, LASER PHYSICS, 2021, 第 0 作者
(6) Low-threshold, single-transverse-mode, 940-nm vertical-cavity surface-emitting laser with a mode filter and half-wavelength cavity, QUANTUM ELECTRONICS, 2020, 
(7) Fabrication and Characterization of a High-Power Assembly With a 20-Junction Monolithically Stacked Laser Power Converter, IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 第 11 作者
(8) InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 第 6 作者
(9) Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm, APPLIED PHYSICS LETTERS, 2016, 第 3 作者
(10) Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, NANO LETTERS, 2016, 第 5 作者
(11) Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 第 3 作者
(12) InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, NANOTECHNOLOGY, 2016, 第 6 作者
(13) Pushing Detection Wavelength Toward 1 mu m by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers, IEEE ELECTRON DEVICE LETTERS, 2016, 第 8 作者
(14) Pushing Detection Wavelength Toward 1 ��m by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers, IEEE ELECTRON DEVICE LETTERS, 2016, 第 8 作者
(15) 2004 nm Ridge Waveguide Distributed Feedback Lasers with InGaAs Multi-Quantum Wells, IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 第 4 作者
(16) Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, 中国物理快报:英文版, 2016, 第 2 作者
(17) Single-section mode-locked 1.55-mu m InAs/InP quantum dot lasers grown by MOVPE, OPTICS COMMUNICATIONS, 2016, 第 3 作者
(18) Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, CHINESE PHYSICS LETTERS, 2016, 第 11 作者
(19) Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, NANO LETT., 2016, 第 5 作者
(20) Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate, CRYSTAL GROWTH & DESIGN, 2015, 第 5 作者
(21) Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating, APPLIED OPTICS, 2015, 第 3 作者
(22) Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence, APPLIED PHYSICS LETTERS, 2015, 第 1 作者
(23) Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation, AIP ADVANCES, 2015, 第 2 作者
(24) High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy., OPTICS EXPRESS, 2015, 
(25) Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal, SOLID STATE COMMUNICATIONS, 2015, 第 8 作者
(26) Neutron-irradiation-induced near-infrared emission in alpha-Al2O3, PHILOSOPHICAL MAGAZINE LETTERS, 2014, 第 5 作者
(27) Three-region characteristic temperature in p-doped quantum dot lasers, APPLIED PHYSICS LETTERS, 2014, 第 2 作者
(28) Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD, JOURNAL OF CRYSTAL GROWTH, 2014, 第 4 作者
(29) The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy, JOURNAL OF CRYSTAL GROWTH, 2014, 第 5 作者
(30) Measurement of Linewidth Enhancement Factor for 1.3-mu m InAs/GaAs Quantum Dot Lasers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 第 3 作者
(31) InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition, CHINESE PHYSICS LETTERS, 2013, 第 2 作者
(32) Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition, JOURNAL OF CRYSTAL GROWTH, 2013, 第 2 作者
(33) Theoretical study of the effects of InAs/GaAs quantum dot layer, APPLIED PHYSICS LETTERS, 2012, 第 3 作者
(34) Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers, OPTICS LETTERS, 2012, 第 2 作者
(35) High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability, OPTICS LETTERS, 2012, 第 2 作者
(36) High-brightness 1.3 ��m InAs/GaAs quantum dot tapered laser with high temperature stability, OPTICS LETTERS, 2012, 第 2 作者
(37) Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots, CHINESE PHYSICS LETTERS, 2011, 第 5 作者
(38) Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy, SEMICONDUCTORSCIENCEANDTECHNOLOGY, 2011, 第 4 作者
(39) Temperature compensation for threshold current and slope efficiency of 1.3 mu m inas/gaas quantum-dot lasers by facet coating design, CHINESE PHYSICS LETTERS, 2011, 第 3 作者
(40) The research progress of quantum dot lasers and photodetectors in china, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 第 2 作者
(41) 分子束外延生长高速直接调制1·3μmInAs/GaAs量子点激光器, High-speed directly-modulated 1.3-��m InAs/GaAs quantum dot lasers grown by molecular beam epitaxy, 黑龙江大学工程学报, 2011, 第 2 作者
(42) Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer, JOURNAL OF APPLIED PHYSICS, 2011, 第 3 作者
(43) Temperature Compensation for Threshold Current and Slope Efficiency of 1.3μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design, Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 ��m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design, 中国物理快报:英文版, 2011, 第 3 作者
(44) Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model, Numerical study of strained InGaAs quantum well lasers emitting at 2.33 ��m using the eight-band model, 中国物理:英文版, 2011, 第 3 作者
(45) Numerical study of strained ingaas quantum well lasers emitting at 2.33 mu m using the eight-band model, CHINESE PHYSICS B, 2011, 第 3 作者
(46) Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots, Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots, 中国物理:英文版, 2010, 第 3 作者
(47) A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser, CHINESE PHYSICS LETTERS, 2010, 第 1 作者
(48) High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, High Characteristic Temperature 1.3��m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, 中国物理快报:英文版, 2010, 第 4 作者
(49) High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, High Characteristic Temperature 1.3��m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, 中国物理快报:英文版, 2010, 第 1 作者
(50) High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy, CHINESE PHYSICS LETTERS, 2010, 第 1 作者
(51) Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating, APPLIED PHYSICS LETTERS, 2010, 第 4 作者
(52) A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser, A 10Gb/s Directly-Modulated 1.3��m InAs/GaAs Quantum-Dot Laser, 中国物理快报:英文版, 2010, 第 1 作者
(53) Impact of symmetrized and burt-foreman hamiltonians on spurious solutions and energy levels of inas/gaas quantum dots, CHINESE PHYSICS B, 2010, 第 3 作者
(54) Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers, JOURNAL OF APPLIED PHYSICS, 2010, 第 3 作者
(55) High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability, PROCEEDINGS OF SPIE-THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING VOL.7844: ART. NO. 784404 2010, 2010, 
(56) Self-heating effect on the two-state lasing behaviors in 1.3-mu m inas-gaas quantum-dot lasers, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 第 11 作者
(57) Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers, ACTA PHYSICA SINICA, 2009, 第 11 作者
(58) p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究, Characteristic study of maximum modal gain of p-doped 1.3��m InAs/GaAs quantum dot lasers, 物理学报, 2009, 第 1 作者
(59) Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 第 3 作者

科研活动

   
科研项目
( 1 ) 中国科学院稳定支持基础研究领域青年团队计划“拓扑腔面发射激光芯片”项目, 参与, 中国科学院计划, 2021-06--2026-06
( 2 ) STS双创引导项目“5G通信用1270nm 25G高速半导体激光芯片外延材料产业化”, 负责人, 中国科学院计划, 2020-01--2020-12