基本信息
杨晓光  男  硕导  中国科学院半导体研究所
电子邮件: xgyang@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号1#409
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
低维纳米结构材料、器件与物理;太阳能电池
纳米能源

教育背景

2008-09--2011-06   中科院半导体所   博士

工作经历

   
工作简历
2011-07~现在, 中科院半导体所, 副研
2008-09~2011-06,中科院半导体所, 博士

教授课程

化合物半导体材料生长与表征

出版信息

   
发表论文
(1) Effect of Sb Composition on the Optical Properties of InAsGaAsSb Quantum Dots, Chin Phys B, 2021, 通讯作者
(2) 1.3 um p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance, Crystals, 2020, 通讯作者
(3) 25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C, Chinese Optics Letters, 2020, 第 3 作者
(4) Surface Modification of Al-Doped ZnO Transparent Conducive Thin Films with Polycrystalline Zinc Molybdenum Oxide., ACS APPLIED MATERIALS & INTERFACES, 2019, 第 2 作者
(5) Optically rough and physically flat TCO substrate formed by coating ZnO thin film on pyramid-patterned glass substrate, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2019, 第 3 作者
(6) Sol-gel derived Zn1-xMgxO :Al transparent conductive thin film and its application to thin film solar cells, THIN SOLID FILMS, 2019, 第 2 作者
(7) Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal-organic chemical vapor deposition, NANOTECHNOLOGY, 2018, 第 1 作者
(8) Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires., NANOSCALE RESEARCH LETTERS, 2018, 第 3 作者
(9) Self-Flattened ZnO:Al Transparent Conductive Thin Films Derived by Sol-Gel Process, IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 第 2 作者
(10) Improved performance of 1.3-lm InAs/GaAs quantum dot lasers by direct Si doping, APPLIED PHYSICS LETTERS, 2018, 第 1 作者
(11) Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition, NANOSCALE RESEARCH LETTERS, 2017, 第 2 作者
(12) InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, NANOTECHNOLOGY, 2016, 第 2 作者
(13) Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, 中国物理快报:英文版, 2016, 第 3 作者
(14) Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires, NANO LETTERS, 2016, 第 2 作者
(15) Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, Nano lett., 2016, 第 2 作者
(16) Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates, JOURNAL OF CRYSTAL GROWTH, 2015, 第 3 作者
(17) Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate, CRYSTAL GROWTH & DESIGN, 2015, 第 2 作者
(18) Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD, JOURNAL OF CRYSTAL GROWTH, 2014, 第 2 作者
(19) Enhanced performance of quantum dot solar cells based on type II quantum dots, JOURNAL OF APPLIED PHYSICS, 2014, 第 2 作者
(20) The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy, JOURNAL OF CRYSTAL GROWTH, 2014, 第 2 作者
(21) Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 第 1 作者

科研活动

   
科研项目
( 1 ) 新型高效量子点中间能带太阳能电池材料及器件研究, 参与, 国家任务, 2015-01--2018-12
( 2 ) 新型半导体纳米线的可控生长和表征, 参与, 国家任务, 2012-01--2016-08
( 3 ) 硅基III-V族纳米线选区横向生长及其高迁移率3D晶体管研究, 参与, 国家任务, 2013-01--2016-12
( 4 ) 有源红外气体传感材料与器件及应用, 参与, 国家任务, 2017-07--2020-06
( 5 ) 中国科学院空间科学战略性先导科技专项, 参与, 中国科学院计划, 2018-01--2018-12
( 6 ) II 型能带结构中间能带太阳能电池器件物理及叠层量子点材料的可控制备研究, 负责人, 国家任务, 2019-12--2023-11
参与会议
(1)Selective-area Growth of Defect-free InAsSb Nanowires Arrays on Si Substrates by Metal Organic Chemical Vapor Deposition   2017-08-21