基本信息
刘智  男  硕导  中国科学院半导体研究所
电子邮件: zhiliu@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
硅基光电子学

教育背景

2009-09--2014-06   中国科学院半导体研究所   博士
2005-09--2009-06   太原理工大学   学士

工作经历

   
工作简历
2020-09~现在, 中国科学院半导体研究所, 副研究员
2018-01~2020-08,中国科学院半导体研究所, 项目副研究员
2014-07~2017-12,中国科学院半导体研究所, 助理研究员
2009-09~2014-06,中国科学院半导体研究所, 博士
2005-09~2009-06,太原理工大学, 学士

专利与奖励

   
专利成果
( 1 ) 一种钙钛矿薄膜的制备方法及钙钛矿LED, 2021, 第 5 作者, 专利号: CN113066947A

( 2 ) 增强紫外波段响应度的硅雪崩光电二极管及其制备方法, 2021, 第 5 作者, 专利号: CN112864268A

( 3 ) GeSn/钙钛矿异质结宽光谱探测器及其制作方法, 2021, 第 4 作者, 专利号: CN112670366A

( 4 ) 钙钛矿太阳电池PN结及其制备方法, 2021, 第 4 作者, 专利号: CN112397650A

( 5 ) 非对称三波导结构的偏振分束器及其制备方法, 2021, 第 2 作者, 专利号: CN110780381B

( 6 ) 背接触式钙钛矿发光二极管, 2021, 第 5 作者, 专利号: CN110085756B

( 7 ) 集成加热型锗波导热光调制器结构及其制备方法, 2020, 第 3 作者, 专利号: CN112099246A

( 8 ) 一种波导耦合的硅基光电探测器及其制备方法, 2020, 第 1 作者, 专利号: CN112038441A

( 9 ) 一种波导耦合的光电探测器及其制备方法, 2020, 第 1 作者, 专利号: CN111952399A

( 10 ) 一种硅基电吸收调制器及其制备方法, 2020, 第 1 作者, 专利号: CN108828797B

( 11 ) 背靠背双吸收硅基光电探测器及制备方法, 2020, 第 2 作者, 专利号: CN108447940B

( 12 ) 一种横向结构锗/硅异质结雪崩光电探测器及其制备方法, 2019, 第 2 作者, 专利号: CN107068784B

( 13 ) 用于碳基钙钛矿太阳能电池的介孔碳电极及其制备方法, 2019, 第 5 作者, 专利号: CN109671849A

( 14 ) 硅基横向注入激光器及其制备方法, 2019, 第 1 作者, 专利号: CN106229813B

( 15 ) 硅基宽光谱探测器及制备方法, 2016, 第 1 作者, 专利号: CN105405916A

( 16 ) 具有亚波长光栅结构的面入射硅基锗光电探测器及其制备方法, 2015, 第 1 作者, 专利号: CN105070779A

( 17 ) 大失配体系硅基无位错异质外延方法, 2015, 第 3 作者, 专利号: CN104377279A

( 18 ) 硅基锗激光器及其制备方法, 2013, 第 1 作者, 专利号: CN103427332A

出版信息

   
发表论文
(1) 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application, PHOTONICS RESEARCH, 2021, 通讯作者
(2) Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite, TSINGHUA SCIENCE AND TECHNOLOGY, 2021, 第 7 作者
(3) Germanium lead alloy on insulator grown by rapid melting growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 第 8 作者
(4) Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 第 8 作者
(5) Investigation of lead surface segregation during germanium-lead epitaxial growth, JOURNAL OF MATERIALS SCIENCE, 2020, 第 7 作者
(6) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs, Journal of Luminescence, 2020, 第 6 作者
(7) High-power back-to-back dual-absorption germanium photodetector, OPTICS LETTERS, 2020, 通讯作者
(8) Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn, SCIENTIFIC REPORTS, 2020, 第 6 作者
(9) Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates, Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates, PHOTONICS RESEARCH, 2020, 通讯作者
(10) 56 Gbps high-speed Ge electro-absorption modulator, 56 Gbps high-speed Ge electro-absorption modulator, PHOTONICS RESEARCH, 2020, 第 1 作者
(11) High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 通讯作者
(12) High-Performance Germanium Waveguide Photodetectors on Silicon, High-Performance Germanium Waveguide Photodetectors on Silicon, CHINESE PHYSICS LETTERS, 2020, 通讯作者
(13) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 6 作者
(14) Study of GePb photodetectors for shortwave infrared detection, OPTICS EXPRESS, 2019, 第 4 作者
(15) Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector, ACS PHOTONICS, 2019, 第 8 作者
(16) Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes, ENERGY TECHNOLOGY, 2019, 第 4 作者
(17) 25 x 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, PHOTONICS RESEARCH, 2019, 第 1 作者
(18) Tunable multiple Fano resonance employing polarization-selective excitation of coupled surface-mode and nanoslit antenna resonance in plasmonic nanostructures, SCIENTIFIC REPORTS, 2019, 第 2 作者
(19) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 第 4 作者
(20) Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, TSINGHUA SCIENCE AND TECHNOLOGY, 2019, 第 2 作者
(21) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 1 作者
(22) Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 第 8 作者
(23) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 2 作者
(24) Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect, JOURNAL OF APPLIED PHYSICS, 2018, 第 1 作者
(25) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, JOURNAL OF SEMICONDUCTORS, 2018, 第 1 作者
(26) Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, JOURNAL OF CRYSTAL GROWTH, 2018, 第 2 作者
(27) MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors, ENERGY TECHNOLOGY, 2018, 第 3 作者
(28) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 2 作者
(29) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, 半导体学报:英文版, 2018, 第 1 作者
(30) Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 3 作者
(31) Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 3 作者
(32) Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy, Letter, 2017, 第 5 作者
(33) Ultrathin Broadband Germanium−Graphene Hybrid Photodetector with High Performance, ACS Applied Materials & Interfaces Research, 2017, 第 6 作者
(34) Ultrathin Broadband Germanium-Graphene Hybrid Photodetector with High Performance, ACS APPLIED MATERIALS & INTERFACES, 2017, 第 6 作者
(35) Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy, OPTICS LETTERS, 2017, 第 5 作者
(36) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, JOURNAL OF SEMICONDUCTORS, 2017, 第 4 作者
(37) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, 半导体学报(英文版), 2017, 第 4 作者
(38) Facile and Efficient Synthesis of a Microsized SiOx/C Core−Shell Composite as Anode Material for Lithium Ion Batteries, ENERGY & FUELS, 2017, 第 4 作者
(39) Photocurrent Enhancement in Si-Ge Photodetectors by Utilizing Surface Plasmons, PLASMONICS, 2017, 第 2 作者
(40) High-performance ball-milled SiOx anodes for lithium ion batteries, JOURNAL OF POWER SOURCES, 2017, 第 3 作者
(41) Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys, JOURNAL OF MATERIALS SCIENCE, 2017, 第 3 作者
(42) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 1 作者
(43) Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si, Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si, CHINESE PHYSICS B, 2016, 第 2 作者
(44) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 3 作者
(45) Research progress of Si-based germanium materials and devices, JOURNAL OF SEMICONDUCTORS, 2016, 第 3 作者
(46) High-speed waveguide-integrated Ge/Si avalanche photodetector, CHINESE PHYSICS B, 2016, 第 3 作者
(47) Temperature dependent direct-bandgap light emission and optical gain of Ge, CHINESE PHYSICS B, 2016, 第 1 作者
(48) Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery, NANOSCALE RESEARCH LETTERS, 2016, 第 4 作者
(49) Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si, Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si, 中国物理B:英文版, 2016, 第 2 作者
(50) High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate, SCIENTIFIC REPORTS, 2016, 第 3 作者
(51) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 第 6 作者
(52) Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 第 2 作者
(53) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach, Journal of applied physics, 2015, 第 4 作者
(54) Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 第 2 作者
(55) Si基IV族异质结构发光器件的研究进展, Recent progress in Ge and GeSn light emission on Si, ACTA PHYSICA SINICA, 2015, 第 3 作者
(56) High hole mobility GeSn on insulator formed by self-organized seeding lateral growth, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 通讯作者
(57) Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser, CHINESE PHYSICS B, 2015, 第 6 作者
(58) Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth, THIN SOLID FILMS, 2015, 第 1 作者
(59) Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE ELECTRON DEVICE LETTERS, 2015, 第 4 作者
(60) Si基IV族异质结构发光器件的研究进展, Recent progress in Ge and GeSn light emission on Si, ACTA PHYSICA SINICA, 2015, 第 3 作者
(61) Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 通讯作者
(62) Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn, SOLID-STATE ELECTRONICS, 2015, 第 4 作者
(63) Theoretical study on optical gain characteristics of Ge_(1-x)Sn_x alloy for short-wave infrared laser, Chinese Physics. B, 2015, 第 6 作者
(64) Enhanced light trapping in periodically truncated cone silicon nanowire structure, JOURNAL OF SEMICONDUCTORS, 2015, 第 4 作者
(65) High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector, INFRARED SENSORS, DEVICES, AND APPLICATIONS V, 2015, 
(66) Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors, CHINESE PHYSICS B, 2014, 第 3 作者
(67) Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature, CHINESE PHYSICS B, 2014, 第 2 作者
(68) Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance, NANOSCALE RESEARCH LETTERS, 2014, 第 5 作者
(69) Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate, APPLIED PHYSICS LETTERS, 2014, 第 1 作者
(70) Si基IV族光电器件的研究进展(一)—激光器, Progress in Study of Si-Based Group IV Optoelectronic Devices(Ⅰ)——Lasers, 激光与光电子学进展, 2014, 第 1 作者
(71) Crystal Quality Improvement of GeSn Alloys by Thermal Annealing, ECS SOLID STATE LETTERS, 2014, 第 4 作者
(72) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects, CHINESE PHYSICS B, 2014, 第 3 作者
(73) High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 3 作者
(74) Ge-Si quantum dots thin film solar cells, APPLIED PHYSICS LETTERS, 2013, 第 1 作者
(75) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 2 作者
(76) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 1 作者
(77) Enhanced photoluminescence from porous silicon nanowire arrays, NANOSCALE RESEARCH LETTERS, 2013, 第 3 作者
(78) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 1 作者
(79) Si基Ge异质结构发光器件的研究进展, Progress in Ge/Si heterostructures for light emitters, 中国光学, 2013, 第 1 作者
(80) Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth, JOURNAL OF APPLIED PHYSICS, 2013, 第 2 作者
(81) High-responsivity GeSn short-wave infrared p-i-n photodetectors, APPLIED PHYSICS LETTERS, 2013, 第 5 作者
(82) High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector, CHINESE PHYSICS B, 2013, 第 4 作者
(83) Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate, CHINESE PHYSICS B, 2013, 第 1 作者
(84) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 2 作者
(85) Progress in Ge/Si heterostructures for light emitters, Chinese journal of optics, 2013, 第 1 作者
(86) Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping, OPTICS EXPRESS, 2012, 通讯作者
(87) Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells, APPLIED PHYSICS LETTERS, 2012, 第 1 作者
(88) Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature, NANOSCALE RESEARCH LETTERS, 2012, 第 1 作者
(89) Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes, CHINESE PHYSICS LETTERS, 2012, 第 4 作者
(90) Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As, Ieee international conference on group iv photonics gfp, 2011, 第 5 作者

科研活动

   
科研项目
( 1 ) 高速高响应硅基探测器阵列的研究, 负责人, 国家任务, 2020-01--2021-12
( 2 ) 快速熔融法制备硅基锗锡及激光器的研究, 负责人, 国家任务, 2020-01--2023-12
参与会议
(1)高速低功耗小尺寸锗硅电吸收调制器   2021中国光网络研讨会   2021-06-17