基本信息
郑军  男  硕导  中国科学院半导体研究所
电子邮件: zhengjun06@mails.ucas.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
硅基光电子学
半导体材料与器件物理

教育背景

2006-09--2011-06   中国科学院研究生院   博士
2002-09--2006-06   北京理工大学   本科

工作经历

   
工作简历
2015-01~现在, 中国科学院半导体研究所, 副研究员
2011-07~2014-12,中国科学院半导体研究所, 助理研究员
2006-09~2011-06,中国科学院研究生院, 博士
2002-09~2006-06,北京理工大学, 本科

教授课程

低维材料制备、表征及应用

专利与奖励

   
专利成果
( 1 ) 场效应晶体管器件, 2021, 第 2 作者, 专利号: CN111341840B

( 2 ) 一种钙钛矿薄膜的制备方法及钙钛矿LED, 2021, 第 4 作者, 专利号: CN113066947A

( 3 ) 增强紫外波段响应度的硅雪崩光电二极管及其制备方法, 2021, 第 3 作者, 专利号: CN112864268A

( 4 ) GeSn/钙钛矿异质结宽光谱探测器及其制作方法, 2021, 第 5 作者, 专利号: CN112670366A

( 5 ) 钙钛矿太阳电池PN结及其制备方法, 2021, 第 3 作者, 专利号: CN112397650A

( 6 ) 背接触式钙钛矿发光二极管, 2021, 第 4 作者, 专利号: CN110085756B

( 7 ) 集成加热型锗波导热光调制器结构及其制备方法, 2020, 第 1 作者, 专利号: CN112099246A

( 8 ) 一种波导耦合的硅基光电探测器及其制备方法, 2020, 第 3 作者, 专利号: CN112038441A

( 9 ) 一种波导耦合的光电探测器及其制备方法, 2020, 第 3 作者, 专利号: CN111952399A

( 10 ) 一种肖特基二极管及制备方法, 2020, 第 1 作者, 专利号: CN111540788A

( 11 ) 硅基IV族合金材料及其外延方法, 2020, 第 2 作者, 专利号: CN110777436A

( 12 ) 可见-短波红外探测器及其制备方法, 2020, 第 1 作者, 专利号: CN108346713B

( 13 ) 用于碳基钙钛矿太阳能电池的介孔碳电极及其制备方法, 2019, 第 4 作者, 专利号: CN109671849A

( 14 ) 一种Cu@SiO 2 核壳结构的制备方法, 2018, 第 3 作者, 专利号: CN105536788B

( 15 ) 一种Si基复合负极材料及其锂电池的制备方法, 2016, 第 3 作者, 专利号: CN105406134A

( 16 ) 一种SiO x 基锂离子电池复合负极材料的制备方法, 2016, 第 3 作者, 专利号: CN105826560A

( 17 ) 适用LED光源泵浦的掺铒光放大器材料的制备方法, 2014, 第 1 作者, 专利号: CN103834916A

( 18 ) 单光子源器件的制备方法, 2014, 第 1 作者, 专利号: CN103812003A

( 19 ) 下转换荧光材料的制备方法, 2013, 第 2 作者, 专利号: CN102977880A

( 20 ) 太阳能电池减反膜, 2012, 第 2 作者, 专利号: CN102738251A

( 21 ) 太阳能电池模块, 2012, 第 2 作者, 专利号: CN102683467A

出版信息

   
发表论文
(1) 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application, PHOTONICS RESEARCH, 2021, 第 5 作者
(2) Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite, TSINGHUA SCIENCE AND TECHNOLOGY, 2021, 第 6 作者
(3) Elucidating the role of lattice thermal conductivity in pi-phases of IV-VI monochalcogenides for highly efficient thermoelectric performance, INTERNATIONAL JOURNAL OF ENERGY RESEARCH, 2021, 第 5 作者
(4) Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 通讯作者
(5) 红外光电探测技术研究现状及展望(特邀), Research Status and Prospect of Infrared Photoelectric Detection Technology(Invited), 光子学报, 2021, 第 4 作者
(6) Germanium lead alloy on insulator grown by rapid melting growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 通讯作者
(7) Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion, JOURNAL OF MATERIALS SCIENCE, 2021, 第 7 作者
(8) Double-shell-structured Si@SiOx@C composite material for long-life lithium-ion storage, IONICS, 2020, 第 3 作者
(9) Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 通讯作者
(10) Well-aligned periodic germanium nanoisland arrays with large areas and improved field emission performance induced by femtosecond laser, APPLIED SURFACE SCIENCE, 2020, 通讯作者
(11) Investigation of lead surface segregation during germanium-lead epitaxial growth, JOURNAL OF MATERIALS SCIENCE, 2020, 通讯作者
(12) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs, Journal of Luminescence, 2020, 第 3 作者
(13) GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design, JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 通讯作者
(14) Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn, SCIENTIFIC REPORTS, 2020, 第 7 作者
(15) High-power back-to-back dual-absorption germanium photodetector, OPTICS LETTERS, 2020, 第 5 作者
(16) Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates, Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates, PHOTONICS RESEARCH, 2020, 第 5 作者
(17) Enhanced effect of 1,2-dichlorobenzene on the property of PC61BM and perovskite films for planar heterojunction perovskite solar cells, ORGANIC ELECTRONICS, 2020, 第 5 作者
(18) 56 Gbps high-speed Ge electro-absorption modulator, 56 Gbps high-speed Ge electro-absorption modulator, PHOTONICS RESEARCH, 2020, 第 4 作者
(19) High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 第 6 作者
(20) High-Performance Germanium Waveguide Photodetectors on Silicon, High-Performance Germanium Waveguide Photodetectors on Silicon, CHINESE PHYSICS LETTERS, 2020, 第 7 作者
(21) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 3 作者
(22) Study of GePb photodetectors for shortwave infrared detection, OPTICS EXPRESS, 2019, 通讯作者
(23) Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes, ENERGY TECHNOLOGY, 2019, 第 5 作者
(24) High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application, CHINESE PHYSICS B, 2019, 第 6 作者
(25) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 通讯作者
(26) Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, TSINGHUA SCIENCE AND TECHNOLOGY, 2019, 第 3 作者
(27) Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 通讯作者
(28) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 1 作者
(29) Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect, JOURNAL OF APPLIED PHYSICS, 2018, 第 4 作者
(30) Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, JOURNAL OF CRYSTAL GROWTH, 2018, 通讯作者
(31) MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors, ENERGY TECHNOLOGY, 2018, 第 4 作者
(32) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 1 作者
(33) Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 通讯作者
(34) Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx, IEEE Transactions On Electron Devices, 2018, 
(35) Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 2 作者
(36) Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy, Letter, 2017, 第 1 作者
(37) Insight into the effect of ligand-exchange on colloidal CsPbBr3 perovskite quantum dot/mesoporous-TiO2 composite-based photodetectors: much faster electron injection, JOURNAL OF MATERIALS CHEMISTRY C, 2017, 第 6 作者
(38) Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy, OPTICS LETTERS, 2017, 通讯作者
(39) Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, SUPERLATTICES AND MICROSTRUCTURES, 2017, 通讯作者
(40) Numerical calculation of strain-N+-Ge1%xSnx/P+-δGe1%xSnx/N%-Ge1%y%zSiySnz/P+-Ge1%y%zSiySnz heterojunction tunnel field-effect transistor, Japanese Journal of Applied Physics, 2017, 
(41) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, 半导体学报(英文版), 2017, 第 3 作者
(42) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, JOURNAL OF SEMICONDUCTORS, 2017, 第 3 作者
(43) Facile and Efficient Synthesis of a Microsized SiOx/C Core−Shell Composite as Anode Material for Lithium Ion Batteries, ENERGY & FUELS, 2017, 第 5 作者
(44) High-performance ball-milled SiOx anodes for lithium ion batteries, JOURNAL OF POWER SOURCES, 2017, 第 4 作者
(45) Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys, JOURNAL OF MATERIALS SCIENCE, 2017, 通讯作者
(46) All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance, DALTON TRANSACTIONS, 2017, 第 4 作者
(47) Numerical calculation of strain-N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 通讯作者
(48) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 5 作者
(49) Influence of H2 on strain evolution of high-Sn-content Ge1-xSnx alloys, Journal of Materials Science, 2016, 第 1 作者
(50) Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering, VACUUM, 2016, 第 4 作者
(51) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 通讯作者
(52) High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode, ELECTROCHIMICA ACTA, 2016, 第 4 作者
(53) Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery, NANOSCALE RESEARCH LETTERS, 2016, 第 5 作者
(54) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 第 3 作者
(55) Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 第 6 作者
(56) Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation, AIP ADVANCES, 2015, 通讯作者
(57) Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering, OPTICAL MATERIALS EXPRESS, 2015, 通讯作者
(58) Efficient 1.54-mu m emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation, JOURNAL OF LUMINESCENCE, 2015, 通讯作者
(59) Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE ELECTRON DEVICE LETTERS, 2015, 通讯作者
(60) Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage, CHINESE PHYSICS B, 2015, 第 5 作者
(61) Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 第 3 作者
(62) Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications, VACUUM, 2015, 第 4 作者
(63) Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn, SOLID-STATE ELECTRONICS, 2015, 第 3 作者
(64) Enhanced light trapping in periodically truncated cone silicon nanowire structure, JOURNAL OF SEMICONDUCTORS, 2015, 第 5 作者
(65) Structural, optical and electrical properties of Ti doped amorphous silicon prepared by co-sputtering, VACUUM, 2014, 第 5 作者
(66) Growth of Crystalline Ge1-xSnx Films on Si (100) by Magnetron Sputtering, ECS SOLID STATE LETTERS, 2014, 通讯作者
(67) Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance, NANOSCALE RESEARCH LETTERS, 2014, 第 7 作者
(68) Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering, JOURNAL OF LUMINESCENCE, 2014, 通讯作者
(69) Strong Eu 2+ light emission in Eu silicate through Eu 3+ reduction in Eu 2 O 3, Nanoscale Research Letters, 2013, 第 2 作者
(70) Enhanced photoluminescence from porous silicon nanowire arrays, NANOSCALE RESEARCH LETTERS, 2013, 第 4 作者
(71) 用阶梯变化金属纳米光栅增加介质中的光吸收, 太阳能, 2013, 第 3 作者
(72) Impact of ammonia on the electrical properties of p-type Si nanowire arrays, JOURNAL OF APPLIED PHYSICS, 2013, 第 4 作者
(73) Intense 974 nm emission from ErxYb2−xSi2O7 films through efficient energy transfer up-conversion from Er3+ to Yb3+ for Si solar cell, JOURNAL OF LUMINESCENCE, 2012, 通讯作者
(74) Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO) Multilayer Nanostructure, NANO-MICRO LETTERS, 2012, 第 2 作者
(75) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Chinese Physics B, 2012, 第 3 作者
(76) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, CHINESE PHYSICS B, 2012, 第 3 作者
(77) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, CHINESE PHYSICS B, 2011, 第 2 作者
(78) 高效硅基红外发光材料研究, 2011, 第 1 作者
(79) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 3 作者
(80) Strained and strain-relaxed epitaxial Ge_(l-x)Sn_x alloys on Si(100)substrates, Chinese Physics. B, 2011, 第 3 作者
(81) Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates, CHINESE PHYSICS B, 2011, 第 3 作者
(82) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, 中国物理:英文版, 2011, 第 2 作者
(83) Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material, CHINESE PHYSICS B, 2011, 第 4 作者
(84) Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate, MATERIALS LETTERS, 2011, 通讯作者

科研活动

   
科研项目
( 1 ) 高锡组分锗锡合金外延生长及中红外光电探测器研究, 负责人, 国家任务, 2019-08--2023-06
( 2 ) 16通道100Gbps高响应低暗电流硅基微纳锗硅探测器阵列研究, 参与, 国家任务, 2017-07--2022-06
( 3 ) 锗铅合金材料外延生长及能带结构的基础研究, 负责人, 国家任务, 2021-01--2021-12
( 4 ) 锗硅雪崩光电探测器阵列及相干成像激光雷达系统的研制, 负责人, 国家任务, 2021-01--2025-12
参与会议
(1)Ge1-xSnx及Ge1-xPbx合金的溅射外延生长研究   第十三届全国分子束外延学术会议   2019-08-14
(2)Ge1-xPbx合金的外延生长及光电探测器研究   第十三届全国硅基光电子材料及器件研讨会   2019-06-13
(3)Ge1-xSnx和Ge1-x-ySixSny单晶薄膜的溅射外延制备研究   中国材料大会   2018-07-12