基本信息
魏同波  男  博导  中国科学院半导体研究所
电子邮件: tbwei@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号中科院半导体研究所
邮政编码: 100083

招生信息

   
招生专业
080501-材料物理与化学
0805Z2-半导体材料与器件
招生方向
GaN基材料外延及相关发光器件
深紫外LED器件
光电集成

教育背景

2015-12--2016-12   康奈尔大学   访问学者
2004-09--2007-06   中科院半导体研究所   博士
2001-09--2004-06   中科院兰州化学物理研究所   硕士
1997-09--2001-06   山东师范大学   学士

工作经历

   
工作简历
2018-01~现在, 中科院半导体研究所, 研究员
2015-12~2016-12,康奈尔大学, 访问学者
2011-01~2017-12,中科院半导体研究所, 副研究员
2007-07~2010-12,中科院半导体研究所, 助理研究员
2004-09~2007-06,中科院半导体研究所, 博士
2001-09~2004-06,中科院兰州化学物理研究所, 硕士
1997-09~2001-06,山东师范大学, 学士

专利与奖励

   
专利成果
( 1 ) 基于多孔AlGaN的紫外分布布拉格反射镜及其制备方法, 2021, 第 3 作者, 专利号: CN110190511B

( 2 ) MSM型多孔氧化镓日盲探测器及其制造方法, 2021, 第 1 作者, 专利号: CN110970513B

( 3 ) 垂直金字塔结构LED及其制备方法, 2021, 第 3 作者, 专利号: CN109166948B

( 4 ) 基于非晶衬底生长氮化物的方法及结构, 2021, 第 2 作者, 专利号: CN109585270B

( 5 ) GaN基垂直LED结构及其制备方法, 2019, 第 3 作者, 专利号: CN107833945B

( 6 ) 化合物半导体及其外延方法, 2019, 第 2 作者, 专利号: CN110164757A

( 7 ) 肖特基二极管及其制备方法、半导体功率器件, 2019, 第 2 作者, 专利号: CN110071177A

( 8 ) 芯片尺寸级深紫外发光二极管共晶封装方法, 2019, 第 4 作者, 专利号: CN107256911B

( 9 ) 基于类金字塔型双波长结构的单芯片白光LED及其制备方法, 2019, 第 2 作者, 专利号: CN109904292A

( 10 ) 基于类金字塔型的显指可调的单芯片白光LED及其制备方法, 2019, 第 2 作者, 专利号: CN109841712A

( 11 ) 基于非辐射共振能量转移机制的白光LED及其制备方法, 2019, 第 1 作者, 专利号: CN109841711A

( 12 ) 载气辅助PVT法制备宽禁带半导体单晶材料的装置及方法, 2019, 第 4 作者, 专利号: CN109825875A

( 13 ) 基于物理气相传输法的温度场控制装置及温控方法, 2019, 第 2 作者, 专利号: CN109666970A

( 14 ) 透明单晶AlN的制备方法及衬底、紫外发光器件, 2019, 第 2 作者, 专利号: CN109461644A

( 15 ) 基于Ga 2 O 3 衬底的垂直结构紫外LED及其制备方法, 2018, 第 1 作者, 专利号: CN108630792A

( 16 ) 显指可调的无荧光粉单芯片白光LED器件及其制备方法, 2018, 第 1 作者, 专利号: CN108389941A

( 17 ) 高阻III族氮化物半导体外延结构及其制备方法, 2018, 第 6 作者, 专利号: CN108110048A

( 18 ) 一种氮化镓系发光器件, 2018, 第 4 作者, 专利号: CN103633218B

( 19 ) 利用石墨烯插入层在玻璃衬底上外延AlN薄膜的方法, 2016, 第 3 作者, 专利号: CN106048555A

( 20 ) 氮化镓基微纳米锥结构发光二极管及其制备方法, 2016, 第 2 作者, 专利号: CN105720157A

( 21 ) 一种光色可调发光二极管及其制备方法, 2016, 第 2 作者, 专利号: CN105720151A

( 22 ) 一种多功能组合型纳米图形制作方法, 2015, 第 2 作者, 专利号: CN104355287A

( 23 ) 一种MOCVD设备中的石墨盘, 2015, 第 8 作者, 专利号: CN104357805A

( 24 ) 一种具有低折射率材料的LED图形化衬底的制备方法, 2015, 第 2 作者, 专利号: CN104319318A

( 25 ) 半导体器件、透明金属网状电极及其制作方法, 2014, 第 4 作者, 专利号: CN104134736A

( 26 ) 气相外延在线清洗装置及方法, 2014, 第 4 作者, 专利号: CN104112662A

( 27 ) 一种在石墨烯薄膜上剥离外延材料的方法, 2014, 第 3 作者, 专利号: CN104099662A

( 28 ) 提高光提取效率发光二极管的制备方法, 2014, 第 6 作者, 专利号: CN103943739A

( 29 ) 抑制电极光吸收的发光二极管的制备方法, 2014, 第 6 作者, 专利号: CN103943738A

( 30 ) 一种基于纳米柱二极管压电效应的应力传感器的制备方法, 2014, 第 1 作者, 专利号: CN103794714A

( 31 ) 一种生长GaN厚膜的自剥离方法, 2014, 第 1 作者, 专利号: CN103779185A

( 32 ) 生长半极性GaN厚膜的方法, 2014, 第 2 作者, 专利号: CN103647008A

( 33 ) 一种带有大面积纳米图形的蓝宝石模板制作方法, 2014, 第 2 作者, 专利号: CN103545173A

( 34 ) 在含镓氮化物上生长石墨烯薄膜的方法, 2014, 第 4 作者, 专利号: CN103484831A

( 35 ) 利用AlInGaN制作氮化镓外延薄膜的方法, 2014, 第 7 作者, 专利号: CN103489968A

( 36 ) 植入空气隙光子晶体的氮化镓基发光二极管的制备方法, 2013, 第 3 作者, 专利号: CN103178168A

( 37 ) 氮化镓基宽光谱发光二极管及其制备方法, 2013, 第 5 作者, 专利号: CN103474536A

( 38 ) 一种可提高LED发光效率的金属纳米颗粒的制备方法, 2013, 第 4 作者, 专利号: CN103337564A

( 39 ) 可调控能带的UV LED多量子阱结构装置及生长方法, 2013, 第 3 作者, 专利号: CN103325903A

( 40 ) 一种双加热气相外延生长系统, 2013, 第 2 作者, 专利号: CN103276444A

( 41 ) 紫外发光二极管结构, 2013, 第 3 作者, 专利号: CN103137822A

( 42 ) 一种具有六棱锥形p型氮化镓的发光二极管制备方法, 2013, 第 2 作者, 专利号: CN103107251A

( 43 ) 利用自组装小球制作用于光刻版的金属网格模板的方法, 2013, 第 4 作者, 专利号: CN103091981A

( 44 ) 制作微纳米柱发光二极管的方法, 2013, 第 4 作者, 专利号: CN103022300A

( 45 ) 制备微纳米柱发光二极管的方法, 2013, 第 4 作者, 专利号: CN103022299A

( 46 ) 制备半球形微纳米透镜阵列的方法, 2013, 第 1 作者, 专利号: CN103011060A

( 47 ) 制备GaN厚膜垂直结构LED的方法, 2013, 第 2 作者, 专利号: CN102969410A

( 48 ) 氮化物半导体材料发光二极管及其制备方法, 2013, 第 2 作者, 专利号: CN102891229A

( 49 ) 基于湿法剥离垂直结构发光二极管的制作方法, 2012, 第 2 作者, 专利号: CN102709411A

( 50 ) 纳米柱发光二极管的制作方法, 2012, 第 2 作者, 专利号: CN102709410A

( 51 ) 用于GaN基LED的ITO纳米碗阵列的粗化方法, 2012, 第 2 作者, 专利号: CN102694088A

( 52 ) 蓝宝石纳米碗阵列图形衬底的制作方法, 2012, 第 2 作者, 专利号: CN102691102A

( 53 ) 在低位错GaN纳米柱上外延LED的方法, 2012, 第 2 作者, 专利号: CN102683523A

( 54 ) 具有空气桥结构发光二极管的制作方法, 2012, 第 2 作者, 专利号: CN102683522A

( 55 ) 低位错氮化镓的生长方法, 2012, 第 2 作者, 专利号: CN102409406A

( 56 ) 具有p-GaN层表面粗化的GaN基LED芯片的制作方法, 2011, 第 3 作者, 专利号: CN102157640A

( 57 ) 制备大尺寸GaN自支撑衬底的方法, 2011, 第 3 作者, 专利号: CN102031560A

( 58 ) 一种增强LED出光效率的粗化方法, 2011, 第 5 作者, 专利号: CN101976712A

( 59 ) 适用于氮化物LED外延生长的纳米级图形衬底的制备方法, 2011, 第 5 作者, 专利号: CN101969088A

( 60 ) 金属催化脱氢提高镁掺杂氮化物激活效率的方法, 2011, 第 1 作者, 专利号: CN102031484A

( 61 ) 在蓝宝石图形衬底上制备无应力GaN厚膜的方法, 2011, 第 3 作者, 专利号: CN102034693A

( 62 ) 氮化镓生长方法, 2010, 第 2 作者, 专利号: CN101728248A

( 63 ) 一种在蓝宝石衬底上生长非极性GaN厚膜的方法, 2009, 第 1 作者, 专利号: CN101519799

( 64 ) 制造厚膜氮化物材料的氢化物气相外延装置, 2008, 第 8 作者, 专利号: CN100418193

( 65 ) 一种制备氮化物单晶衬底的氢化物气相外延装置, 2008, 第 4 作者, 专利号: CN101205627

出版信息

   
发表论文
(1) Semipolar (1122) AlGaN-Based Solar-Blind Ultraviolet Photodetectors with Fast Response, ACS applied materials & interfaces, 2022, 通讯作者
(2) Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode, Light: Science & Applications, 2022, 通讯作者
(3) Improved barrier homogeneity in Pt/Al0.75Ga0.25N Schottky barrier diodes by graphene interlayer, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 通讯作者
(4) GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy, OPTICS LETTERS, 2020, 第 1 作者
(5) Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy, J. Appl. Phys., 2020, 
(6) Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes, JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, 2020, 通讯作者
(7) Quasi van der Waals epitaxy nitride materials and devices on two dimension materials, NANO ENERGY, 2020, 通讯作者
(8) (100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission, CRYSTENGCOMM, 2020, 通讯作者
(9) Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy, APPLIED SURFACE SCIENCE, 2020, 通讯作者
(10) Quasi-two-dimensional Growth of AlN Film on Graphene for Boosting Deep Ultraviolet Light-emitting Diodes, Advanced Science, 2020, 通讯作者
(11) The Optical Properties of Dual-Wavelength InxGa1-xN/GaN Nanorods for Wide-Spectrum Light-Emitting Diodes, JOURNAL OF ELECTRONIC PACKAGING, 2020, 通讯作者
(12) Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes, ADVANCED FUNCTIONAL MATERIALS, 2020, 通讯作者
(13) Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering, Appl. Surf. Sci., 2020, 
(14) On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes, On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes, CHINESE OPTICS LETTERS, 2019, 通讯作者
(15) Discrete energy states induced broadband emission from self-assembly InGaN quantum dots, OPTICAL MATERIALS, 2019, 通讯作者
(16) Epitaxy of III-Nitrides on β-Ga 2 O 3 and Its Vertical Structure LEDs, MICROMACHINES, 2019, 通讯作者
(17) Enhancement of Heat Dissipation for Ultraviolet Light-Emitting Diodes by a Vertically-Oriented Graphene Nanowalls Buffer Layer, Advanced Materials, 2019, 通讯作者
(18) Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission, JOURNAL OF APPLIED PHYSICS, 2019, 通讯作者
(19) Phosphor-Free Three-Dimensional Hybrid White LED With High Color-Rendering Index, IEEE PHOTONICS JOURNAL, 2019, 通讯作者
(20) High performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized -Ga2O3 layer, Opt. Lett., 2019, 通讯作者
(21) Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene, ADVANCED MATERIALS, 2019, 通讯作者
(22) High quality GaN epitaxial growth on beta-Ga2O3 substrate enabled by self-assembled SiO2 nanospheres, JOURNAL OF CRYSTAL GROWTH, 2019, 通讯作者
(23) Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate, APPLIED PHYSICS LETTERS, 2019, 其他(合作组作者)
(24) Directly Grown Graphene as buffer layer to enable high brightness InGaN light emitting diodes, Advanced Materials, 2018, 通讯作者
(25) Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire, J. Am. Chem. Soc., 2018, 
(26) High-quality semipolar (10(1)over-bar(3)over-bar) GaN grown on carbon nanotube-patterned sapphire by hydride vapor phase epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 通讯作者
(27) Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy, SUPERLATTICES AND MICROSTRUCTURES, 2018, 第 3 作者
(28) Direct van der Waals epitaxy of GaN-based light emitting diodes on wet-transferred multi-layer graphene film, Jnpanese Journal of Applied Physics, 2017, 通讯作者
(29) Ehnanced output power of light-emitting diodes with embedded ari-gap photonic crystals by nanosphere lithography, IEEE Photonics Journal, 2017, 通讯作者
(30) Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography, NANOTECHNOLOGY, 2017, 通讯作者
(31) Versatile nanosphere lithography technique combining multiple-exposure nanosphere lens lithography and nanosphere template lithography, CHINESE OPTICS LETTERS, 2017, 通讯作者
(32) Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition, JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 通讯作者
(33) Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy, SCIENTIFIC REPORTS, 2016, 通讯作者
(34) Multiple-exposure colloidal lithography for enhancing light output of GaN-based light-emitting diodes by patterning Ni/Au electrodes., OPTICS EXPRESS, 2016, 通讯作者
(35) Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of AlGaN-based Deep Ultraviolet Light-Emitting Diodes, IEEE PHOTONICS JOURNAL, 2016, 通讯作者
(36) Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode, RSC ADVANCES, 2015, 通讯作者
(37) Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes, OPTICS EXPRESS, 2015, 第 2 作者
(38) Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography, APPLIED PHYSICS LETTERS, 2014, 通讯作者
(39) Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes, OPTICS EXPRESS, 2014, 通讯作者
(40) Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals, OPTICS EXPRESS, 2014, 通讯作者
(41) Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates, IEEE PHOTONICS JOURNAL, 2014, 通讯作者
(42) The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing, AIP ADVANCES, 2014, 通讯作者
(43) Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes, AIP ADVANCES, 2014, 通讯作者
(44) Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography, JOURNAL OF APPLIED PHYSICS, 2014, 通讯作者
(45) Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes, OPTICS LETTERS, 2014, 通讯作者
(46) Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays, JOURNAL OF CRYSTAL GROWTH, 2014, 通讯作者
(47) Hydride vapor phase epitaxy of high quality {10(1)over-bar(3)over-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres, JOURNAL OF CRYSTAL GROWTH, 2014, 通讯作者
(48) Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal, SMALL, 2014, 第 2 作者
(49) Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography, CHINESE PHYSICS B, 2014, 通讯作者
(50) Defects reduction in semipolar {10 3} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth, CrystEngComm, 16, 4562 (2014), 2014, 通讯作者
(51) Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography, JOURNAL OF APPLIED PHYSICS, 2014, 通讯作者
(52) Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography, APPLIED PHYSICS LETTERS, 2014, 通讯作者
(53) Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes, OPTICS EXPRESS, 2014, 通讯作者
(54) Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals, OPTICS EXPRESS, 2014, 通讯作者
(55) Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates, IEEE PHOTONICS JOURNAL, 2014, 通讯作者
(56) The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing, AIP ADVANCES, 2014, 通讯作者
(57) Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography, Applied physics letters, 2013, 
(58) Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier, Ecs solid state lett., 2013, 
(59) Improvement of carrier distribution in dual wavelength light-emitting diodes, JOURNAL OF SEMICONDUCTORS, 2013, 第 2 作者
(60) Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography, AIP ADVANCES, 2013, 通讯作者
(61) Shape designing for light extraction enhancement bulk-GaN light-emitting diodes, JOURNAL OF APPLIED PHYSICS, 2013, 第 3 作者
(62) Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 第 2 作者
(63) Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages, JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 第 4 作者
(64) Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes, OPTICS EXPRESS, 2013, 通讯作者
(65) Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography, Applied physics letters, 2013, 
(66) Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier, Ecs solid state lett., 2013, 
(67) Improvement of carrier distribution in dual wavelength light-emitting diodes, JOURNAL OF SEMICONDUCTORS, 2013, 第 2 作者
(68) Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography, AIP ADVANCES, 2013, 通讯作者
(69) Shape designing for light extraction enhancement bulk-GaN light-emitting diodes, JOURNAL OF APPLIED PHYSICS, 2013, 第 3 作者
(70) Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 第 2 作者
(71) Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages, JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 第 4 作者
(72) Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes, OPTICS EXPRESS, 2013, 通讯作者
(73) Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface, OPTICS EXPRESS, 2012, 第 3 作者
(74) Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres, MATERIALS LETTERS, 2012, 
(75) Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes, APPLIED PHYSICS LETTERS, 2012, 第 3 作者
(76) Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays, IEEE ELECTRON DEVICE LETTERS, 2012, 
(77) Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 第 2 作者
(78) Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography, Wei tb (wei, tongbo); wu k (wu, kui); lan d (lan, ding); yan qf (yan, qingfeng); chen y (chen, yu); du cx (du, chengxiao); wang jx (wang, junxi); zeng yp (zeng, yiping); li jm (li, jinmin), 2012, 
(79) Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres, JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 通讯作者
(80) Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface, OPTICS EXPRESS, 2012, 第 3 作者
(81) Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres, MATERIALS LETTERS, 2012, 
(82) Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes, APPLIED PHYSICS LETTERS, 2012, 第 3 作者
(83) Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays, IEEE ELECTRON DEVICE LETTERS, 2012, 
(84) Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 第 2 作者
(85) Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography, Wei tb (wei, tongbo); wu k (wu, kui); lan d (lan, ding); yan qf (yan, qingfeng); chen y (chen, yu); du cx (du, chengxiao); wang jx (wang, junxi); zeng yp (zeng, yiping); li jm (li, jinmin), 2012, 
(86) Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres, JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 通讯作者
(87) Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate, APPLIED PHYSICS LETTERS, 2011, 通讯作者
(88) Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands, OPTICS EXPRESS, 2011, 通讯作者
(89) MOCVD epitaxy of InAlN on different templates, MOCVD epitaxy of InAlN on different templates, JOURNAL OF SEMICONDUCTORS, 2011, 第 2 作者
(90) Defect-related emission characteristics of nonpolar m-plane gan revealed by selective etching, JOURNAL OF CRYSTAL GROWTH, 2011, 
(91) Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate, APPLIED PHYSICS LETTERS, 2011, 通讯作者
(92) Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands, OPTICS EXPRESS, 2011, 通讯作者
(93) MOCVD epitaxy of InAlN on different templates, MOCVD epitaxy of InAlN on different templates, JOURNAL OF SEMICONDUCTORS, 2011, 第 2 作者
(94) Defect-related emission characteristics of nonpolar m-plane gan revealed by selective etching, JOURNAL OF CRYSTAL GROWTH, 2011, 
(95) Hydride vapor phase epitxay growth of semipolar (10 ) GaN on patterned m-plane sapphire, Journal of The Electrochemical Society, 2010, 157: H721, 2010, 第 1 作者
(96) Catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 通讯作者
(97) Hydride vapor phase epitxay growth of semipolar (10 ) GaN on patterned m-plane sapphire, Journal of The Electrochemical Society, 2010, 157: H721, 2010, 第 1 作者
(98) Catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 通讯作者

科研活动

   
科研项目
( 1 ) GaN基纳米柱LED选区外延及相关光电基础科学问题研究, 负责人, 国家任务, 2015-01--2018-12
( 2 ) 第三代半导体新型照明材料与器件研究, 负责人, 国家任务, 2018-05--2021-04
( 3 ) 二维石墨烯柔性转移氮化物LED的生长与机制研究, 负责人, 地方任务, 2018-01--2020-12
( 4 ) 石墨烯上准范德华外延AlN及辅助剥离垂直结构深紫外LED研究, 负责人, 国家任务, 2020-01--2023-12
( 5 ) 第三代半导体中压电-电/光耦合新效应、材料与器件研究, 负责人, 国家任务, 2022-01--2026-12
参与会议
(1)Cross-st acked carbon nanotubes assisted self-separation offree-standing GaN substrates by hydride vapor phase epitaxy   2015-08-31