基本信息
魏同波  男  博导  中国科学院半导体研究所
电子邮件: tbwei@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号中科院半导体研究所
邮政编码: 100083

招生信息

   
招生专业
080501-材料物理与化学
招生方向
GaN基材料外延及相关发光器件
深紫外LED器件
光电集成

教育背景

2015-12--2016-12   康奈尔大学   访问学者
2004-09--2007-06   中科院半导体研究所   博士
2001-09--2004-06   中科院兰州化学物理研究所   硕士
1997-09--2001-06   山东师范大学   学士

工作经历

   
工作简历
2018-01~现在, 中科院半导体研究所, 研究员
2015-12~2016-12,康奈尔大学, 访问学者
2011-01~2017-12,中科院半导体研究所, 副研究员
2007-07~2010-12,中科院半导体研究所, 助理研究员
2004-09~2007-06,中科院半导体研究所, 博士
2001-09~2004-06,中科院兰州化学物理研究所, 硕士
1997-09~2001-06,山东师范大学, 学士

专利与奖励

   
专利成果
( 1 ) 半导体pn结构及其制备方法, 2022, 第 3 作者, 专利号: CN202210555452.0

( 2 ) 多腔室半导体薄膜外延装置, 2021, 第 2 作者, 专利号: CN112795983A

( 3 ) MSM型多孔氧化镓日盲探测器及其制造方法, 2021, 第 1 作者, 专利号: CN110970513B

( 4 ) 在图形衬底上生长氮化物薄膜结构及其方法, 2020, 第 1 作者, 专利号: CN111341648A

( 5 ) GaN基常关型高电子迁移率晶体管及制备方法, 2020, 第 2 作者, 专利号: CN111243954A

( 6 ) MSM型多孔氧化嫁日盲探测器及其制造方法, 2020, 第 1 作者, 专利号: CN110970513A

( 7 ) 基于多孔AlGaN的紫外分布布拉格反射镜及其制备方法, 2019, 第 3 作者, 专利号: CN110190511A

( 8 ) 化合物半导体及其外延方法, 2019, 第 2 作者, 专利号: CN110164757A

( 9 ) 肖特基二极管及其制备方法、半导体功率器件, 2019, 第 2 作者, 专利号: CN110071177A

( 10 ) 基于类金字塔型双波长结构的单芯片白光LED及其制备方法, 2019, 第 2 作者, 专利号: CN109904292A

( 11 ) 基于类金字塔型的显指可调的单芯片白光LED及其制备方法, 2019, 第 2 作者, 专利号: CN109841712A

( 12 ) 基于非辐射共振能量转移机制的白光LED及其制备方法, 2019, 第 1 作者, 专利号: CN109841711A

( 13 ) 载气辅助PVT法制备宽禁带半导体单晶材料的装置及方法, 2019, 第 4 作者, 专利号: CN109825875A

( 14 ) 基于物理气相传输法的温度场控制装置及温控方法, 2019, 第 2 作者, 专利号: CN109666970A

( 15 ) 基于非晶衬底生长氮化物的方法及结构, 2019, 第 2 作者, 专利号: CN109585270A

( 16 ) 透明单晶AlN的制备方法及衬底、紫外发光器件, 2019, 第 2 作者, 专利号: CN109461644A

( 17 ) 在图形衬底上生长氮化物薄膜的方法, 2019, 第 2 作者, 专利号: CN109285758A

( 18 ) 垂直金字塔结构LED及其制备方法, 2019, 第 3 作者, 专利号: CN109166948A

( 19 ) 基于Ga 2 O 3 衬底的垂直结构紫外LED及其制备方法, 2018, 第 1 作者, 专利号: CN108630792A

( 20 ) 基于Ga 2 O 3 衬底的垂直结构紫外LED及其制备方法, 2018, 第 1 作者, 专利号: CN108630792A

( 21 ) 显指可调的无荧光粉单芯片白光LED器件及其制备方法, 2018, 第 1 作者, 专利号: CN108389941A

( 22 ) 高阻III族氮化物半导体外延结构及其制备方法, 2018, 第 6 作者, 专利号: CN108110048A

( 23 ) GaN基垂直LED结构及其制备方法, 2018, 第 3 作者, 专利号: CN107833945A

( 24 ) 芯片尺寸级深紫外发光二极管共晶封装方法, 2017, 第 4 作者, 专利号: CN107256911A

( 25 ) 利用石墨烯插入层在玻璃衬底上外延AlN薄膜的方法, 2016, 第 3 作者, 专利号: CN106048555A

( 26 ) 氮化镓基微纳米锥结构发光二极管及其制备方法, 2016, 第 2 作者, 专利号: CN105720157A

( 27 ) 一种光色可调发光二极管及其制备方法, 2016, 第 2 作者, 专利号: CN105720151A

( 28 ) 一种多功能组合型纳米图形制作方法, 2015, 第 2 作者, 专利号: CN104355287A

( 29 ) 一种MOCVD设备中的石墨盘, 2015, 第 8 作者, 专利号: CN104357805A

( 30 ) 一种具有低折射率材料的LED图形化衬底的制备方法, 2015, 第 2 作者, 专利号: CN104319318A

( 31 ) 半导体器件、透明金属网状电极及其制作方法, 2014, 第 4 作者, 专利号: CN104134736A

( 32 ) 气相外延在线清洗装置及方法, 2014, 第 4 作者, 专利号: CN104112662A

( 33 ) 一种在石墨烯薄膜上剥离外延材料的方法, 2014, 第 3 作者, 专利号: CN104099662A

( 34 ) 抑制电极光吸收的发光二极管的制备方法, 2014, 第 6 作者, 专利号: CN103943738A

( 35 ) 提高光提取效率发光二极管的制备方法, 2014, 第 6 作者, 专利号: CN103943739A

( 36 ) 一种基于纳米柱二极管压电效应的应力传感器的制备方法, 2014, 第 1 作者, 专利号: CN103794714A

( 37 ) 一种生长GaN厚膜的自剥离方法, 2014, 第 1 作者, 专利号: CN103779185A

( 38 ) 生长半极性GaN厚膜的方法, 2014, 第 2 作者, 专利号: CN103647008A

( 39 ) 一种氮化镓系发光器件, 2014, 第 4 作者, 专利号: CN103633218A

( 40 ) 一种带有大面积纳米图形的蓝宝石模板制作方法, 2014, 第 2 作者, 专利号: CN103545173A

( 41 ) 在含镓氮化物上生长石墨烯薄膜的方法, 2014, 第 4 作者, 专利号: CN103484831A

( 42 ) 利用AlInGaN制作氮化镓外延薄膜的方法, 2014, 第 7 作者, 专利号: CN103489968A

( 43 ) 氮化镓基宽光谱发光二极管及其制备方法, 2013, 第 5 作者, 专利号: CN103474536A

( 44 ) 一种可提高LED发光效率的金属纳米颗粒的制备方法, 2013, 第 4 作者, 专利号: CN103337564A

( 45 ) 可调控能带的UV LED多量子阱结构装置及生长方法, 2013, 第 3 作者, 专利号: CN103325903A

( 46 ) 一种双加热气相外延生长系统, 2013, 第 2 作者, 专利号: CN103276444A

( 47 ) 植入空气隙光子晶体的氮化镓基发光二极管的制备方法, 2013, 第 3 作者, 专利号: CN103178168A

( 48 ) 紫外发光二极管结构, 2013, 第 3 作者, 专利号: CN103137822A

( 49 ) 一种具有六棱锥形p型氮化镓的发光二极管制备方法, 2013, 第 2 作者, 专利号: CN103107251A

( 50 ) 利用自组装小球制作用于光刻版的金属网格模板的方法, 2013, 第 4 作者, 专利号: CN103091981A

( 51 ) 制作微纳米柱发光二极管的方法, 2013, 第 4 作者, 专利号: CN103022300A

( 52 ) 制备微纳米柱发光二极管的方法, 2013, 第 4 作者, 专利号: CN103022299A

( 53 ) 制备半球形微纳米透镜阵列的方法, 2013, 第 1 作者, 专利号: CN103011060A

( 54 ) 制备GaN厚膜垂直结构LED的方法, 2013, 第 2 作者, 专利号: CN102969410A

( 55 ) 氮化物半导体材料发光二极管及其制备方法, 2013, 第 2 作者, 专利号: CN102891229A

( 56 ) 基于湿法剥离垂直结构发光二极管的制作方法, 2012, 第 2 作者, 专利号: CN102709411A

( 57 ) 纳米柱发光二极管的制作方法, 2012, 第 2 作者, 专利号: CN102709410A

( 58 ) 用于GaN基LED的ITO纳米碗阵列的粗化方法, 2012, 第 2 作者, 专利号: CN102694088A

( 59 ) 蓝宝石纳米碗阵列图形衬底的制作方法, 2012, 第 2 作者, 专利号: CN102691102A

( 60 ) 在低位错GaN纳米柱上外延LED的方法, 2012, 第 2 作者, 专利号: CN102683523A

( 61 ) 具有空气桥结构发光二极管的制作方法, 2012, 第 2 作者, 专利号: CN102683522A

( 62 ) 低位错氮化镓的生长方法, 2012, 第 2 作者, 专利号: CN102409406A

( 63 ) 具有p-GaN层表面粗化的GaN基LED芯片的制作方法, 2011, 第 3 作者, 专利号: CN102157640A

( 64 ) 金属催化脱氢提高镁掺杂氮化物激活效率的方法, 2011, 第 1 作者, 专利号: CN102031484A

( 65 ) 在蓝宝石图形衬底上制备无应力GaN厚膜的方法, 2011, 第 3 作者, 专利号: CN102034693A

( 66 ) 制备大尺寸GaN自支撑衬底的方法, 2011, 第 3 作者, 专利号: CN102031560A

( 67 ) 一种增强LED出光效率的粗化方法, 2011, 第 5 作者, 专利号: CN101976712A

( 68 ) 适用于氮化物LED外延生长的纳米级图形衬底的制备方法, 2011, 第 5 作者, 专利号: CN101969088A

( 69 ) 氮化镓生长方法, 2010, 第 2 作者, 专利号: CN101728248A

( 70 ) 一种在蓝宝石衬底上生长非极性GaN厚膜的方法, 2009, 第 1 作者, 专利号: CN101519799A

( 71 ) 一种制备氮化物单晶衬底的氢化物气相外延装置, 2008, 第 4 作者, 专利号: CN101205627A

( 72 ) 制造厚膜氮化物材料的氢化物气相外延装置, 2006, 第 8 作者, 专利号: CN1881533A

出版信息

   
发表论文
(1) Strain visualization enabled in dual-wavelength InGaN/GaN multiple quantum wells Micro-LEDs by piezo-phototronic effect, NANO ENERGY, 2023, 通讯作者
(2) 量子垒高度对深紫外LED调制带宽的影响, Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes, 发光学报, 2022, 第 6 作者
(3) Semipolar (1122) AlGaN-Based Solar-Blind Ultraviolet Photodetectors with Fast Response, ACS applied materials & interfaces, 2022, 通讯作者
(4) Toward Direct Growth of Ultra-Flat Graphene, ADVANCED FUNCTIONAL MATERIALS, 2022, 通讯作者
(5) GaN-based parallel micro-light-emitting diode arrays with dual-wavelength InxGa1-xN/GaN MQWs for visible light communication, OPTICS EXPRESS, 2022, 通讯作者
(6) Three dimensional truncated-hexagonal-pyramid vertical InGaN-based white light emitting diodes based on beta-Ga2O3, OPTICS LETTERS, 2022, 通讯作者
(7) Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode, Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode, LIGHT-SCIENCE & APPLICATIONS, 2022, 通讯作者
(8) Improved barrier homogeneity in Pt/Al0.75Ga0.25N Schottky barrier diodes by graphene interlayer, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 通讯作者
(9) The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) beta-Ga2O3 Substrate for Vertical Light Emitting Diodes, PHOTONICS, 2021, 通讯作者
(10) 中国半导体照明发展综述, Development Summary of Semiconductor Lighting in China, 光学学报, 2021, 第 3 作者
(11) Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures, JOURNAL OF APPLIED PHYSICS, 2021, 通讯作者
(12) Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films, SMALL, 2021, 第 13 作者
(13) GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy, OPTICS LETTERS, 2020, 第 1 作者
(14) Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy, J. Appl. Phys., 2020, 
(15) Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes, ADVANCED SCIENCE, 2020, 通讯作者
(16) Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes, JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, 2020, 通讯作者
(17) Soliton Comb Generation in Air-Clad AlN Microresonators, 2020CONFERENCEONLASERSANDELECTROOPTICSCLEO, 2020, 第11作者
(18) Quasi van der Waals epitaxy nitride materials and devices on two dimension materials, NANO ENERGY, 2020, 通讯作者
(19) Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes, APPLIED PHYSICS LETTERS, 2020, 通讯作者
(20) (100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission†, CRYSTENGCOMM, 2020, 通讯作者
(21) Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy, APPLIED SURFACE SCIENCE, 2020, 通讯作者
(22) Quasi-two-dimensional Growth of AlN Film on Graphene for Boosting Deep Ultraviolet Light-emitting Diodes, Advanced Science, 2020, 通讯作者
(23) The Optical Properties of Dual-Wavelength InxGa1−xN/GaN Nanorods for Wide-Spectrum Light-Emitting Diodes, JOURNAL OF ELECTRONIC PACKAGING, 2020, 通讯作者
(24) Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes, ADVANCED FUNCTIONAL MATERIALS, 2020, 通讯作者
(25) GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate, CRYSTALS, 2020, 第11作者
(26) Ⅲ-Ⅴ化合物的范德华外延生长与应用, Van der Waals Epitaxy ofⅢ-ⅤCompounds and Their Applications, 发光学报, 2020, 第 5 作者
(27) Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering, Appl. Surf. Sci., 2020, 
(28) Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer, ADVANCED MATERIALS, 2019, 通讯作者
(29) Exfoliation of AIN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes, APPLIED PHYSICS EXPRESS, 2019, 第 6 作者
(30) On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes, On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes, CHINESE OPTICS LETTERS, 2019, 通讯作者
(31) Discrete energy states induced broadband emission from self-assembly InGaN quantum dots, OPTICAL MATERIALS, 2019, 通讯作者
(32) Enhancement of Heat Dissipation for Ultraviolet Light-Emitting Diodes by a Vertically-Oriented Graphene Nanowalls Buffer Layer, Advanced Materials, 2019, 通讯作者
(33) Epitaxy of III-Nitrides on β-Ga 2 O 3 and Its Vertical Structure LEDs, MICROMACHINES, 2019, 通讯作者
(34) 基于球差矫正电镜在原子尺度探究氮化铝在蓝宝石衬底上的生长过程, Investigation of AlN growth on sapphire substrate at atomic scale based on spherical aberration correction electron microscope, 电子显微学报, 2019, 第 6 作者
(35) Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices, Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices, 半导体学报:英文版, 2019, 第 4 作者
(36) Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence, NANOTECHNOLOGY, 2019, 第 9 作者
(37) Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission, JOURNAL OF APPLIED PHYSICS, 2019, 通讯作者
(38) Phosphor-Free Three-Dimensional Hybrid White LED With High Color-Rendering Index, IEEE PHOTONICS JOURNAL, 2019, 通讯作者
(39) High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized beta-Ga2O3 layer, OPTICS LETTERS, 2019, 通讯作者
(40) 热氧化GaN制备的β-Ga2O3基日盲紫外探测器, Aβ-Ga2O3 Solar-Blind Ultraviolet Photodetector Prepared by Thermal Oxidization of GaN, 半导体光电, 2019, 第 7 作者
(41) High performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized -Ga2O3 layer, Opt. Lett., 2019, 通讯作者
(42) Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene, ADVANCED MATERIALS, 2019, 通讯作者
(43) High quality GaN epitaxial growth on beta-Ga2O3 substrate enabled by self-assembled SiO2 nanospheres, JOURNAL OF CRYSTAL GROWTH, 2019, 通讯作者
(44) Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate, APPLIED PHYSICS LETTERS, 2019, 通讯作者
(45) High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer, ADVANCED MATERIALS, 2018, 通讯作者
(46) Directly Grown Graphene as buffer layer to enable high brightness InGaN light emitting diodes, Advanced Materials, 2018, 通讯作者
(47) Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2018, 通讯作者
(48) 第3代半导体材料在5G通讯领域的发展与机遇, 新材料产业, 2018, 第 5 作者
(49) Implementation of slow and smooth etching of GaN by inductively coupled plasma, Implementation of slow and smooth etching of GaN by inductively coupled plasma, 半导体学报:英文版, 2018, 第 4 作者
(50) Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire, J. Am. Chem. Soc., 2018, 
(51) Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si, MATERIALS, 2018, 第 8 作者
(52) Generation of multiple near-visible comb lines in an AlN microring via chi((2)) and chi((3)) optical nonlinearities, APPLIED PHYSICS LETTERS, 2018, 第11作者
(53) High-quality semipolar (10(1)over-bar(3)over-bar) GaN grown on carbon nanotube-patterned sapphire by hydride vapor phase epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 通讯作者
(54) Integrated High-Q Crystalline AIN Microresonators for Broadband Kerr and Raman Frequency Combs, ACS PHOTONICS, 2018, 第11作者
(55) Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS 2, MATERIALS, 2018, 第 7 作者
(56) Implementation of slow and smooth etching of GaN by inductively coupled plasma, Implementation of slow and smooth etching of GaN by inductively coupled plasma, JOURNAL OF SEMICONDUCTORS, 2018, 通讯作者
(57) Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High‐Performance Deep‐Ultraviolet Light‐Emitting Diodes, ADVANCED MATERIALS INTERFACES, 2018, 第 4 作者
(58) Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate, NANOSCALE, 2018, 第 7 作者
(59) Introducing carbon dots to moderate the blue emission from zinc vanadium oxide hydroxide hydrate nanoplates, RSC ADVANCES, 2018, 第 3 作者
(60) Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy, SUPERLATTICES AND MICROSTRUCTURES, 2018, 第 3 作者
(61) Direct van der Waals epitaxy of GaN-based light emitting diodes on wet-transferred multi-layer graphene film, Jnpanese Journal of Applied Physics, 2017, 通讯作者
(62) Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal-organic chemical vapor deposition, CRYSTENGCOMM, 2017, 第 5 作者
(63) Aluminum nitride-on-sapphire platform for integrated high-Q microresonators., OPTICS EXPRESS, 2017, 第11作者
(64) Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy, JOURNAL OF APPLIED PHYSICS, 2017, 第 5 作者
(65) 使用溅射AlN成核层实现大规模生产深紫外LED, Large-Scale Production of Deep UV-LEDs by Using Sputtered AlN Nucleation Layer, 半导体技术, 2017, 第 3 作者
(66) Ehnanced output power of light-emitting diodes with embedded ari-gap photonic crystals by nanosphere lithography, IEEE Photonics Journal, 2017, 通讯作者
(67) Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer, Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer, 半导体学报:英文版, 2017, 第 3 作者
(68) Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography, NANOTECHNOLOGY, 2017, 通讯作者
(69) Versatile nanosphere lithography technique combining multiple-exposure nanosphere lens lithography and nanosphere template lithography, CHINESE OPTICS LETTERS, 2017, 通讯作者
(70) Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition, JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 通讯作者
(71) Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy, SCIENTIFIC REPORTS, 2016, 通讯作者
(72) Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals, ADVANCES IN COLLOID AND INTERFACE SCIENCE, 2016, 第 4 作者
(73) Multiple-exposure colloidal lithography for enhancing light output of GaN-based light-emitting diodes by patterning Ni/Au electrodes., OPTICSEXPRESS, 2016, 通讯作者
(74) Investigations on the wettability of graphene on a micron-scale hole array substrate, RSC ADVANCES, 2016, 第 7 作者
(75) Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications, NANO RESEARCH, 2016, 第 10 作者
(76) Family of Cu@metal nanowires network for transparent electrodes on n-AlGaN, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 第 6 作者
(77) Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission, IEEEPHOTONICSJOURNAL, 2016, 第 7 作者
(78) Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of AlGaN-based Deep Ultraviolet Light-Emitting Diodes, IEEE PHOTONICS JOURNAL, 2016, 通讯作者
(79) Broadband tunable microwave photonic phase shifter with low RF power variation in a high-Q AlN microring, OPTICS LETTERS, 2016, 第11作者
(80) Advances and prospects in nitrides based light-emitting-diodes, JOURNAL OF SEMICONDUCTORS, 2016, 第 5 作者
(81) A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure, APPLIED PHYSICS LETTERS, 2016, 第 15 作者
(82) Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode, RSC ADVANCES, 2015, 通讯作者
(83) Effect of layers of carbon-nanotube-patterned substrate on GaN-based light-emitting diodes, JAPANESE JOURNAL OF APPLIED PHYSIC, 2015, 第 2 作者
(84) Layer‐by‐Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity, SMALL, 2015, 第 5 作者
(85) Green light emitting diode grown on thick strain-reducedGreen light emitting diode grown on thick strain-reduced GaN template, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 第 2 作者
(86) 能带调控提高GaN/InGaN多量子阱蓝光LED效率研究, 中国科学: 物理学 力学 天文学, 2015, 第 4 作者
(87) Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching, PHYSICA STATUS SOLIDI A, 2015, 第 9 作者
(88) Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes, OPTICS EXPRESS, 2015, 第 2 作者
(89) Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 第 6 作者
(90) Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 第 9 作者
(91) Advantages of InGaN Light Emitting Diodes With Alternating Quantum Barriers, JOURNAL OF DISPLAY TECHNOLOGY, 2015, 第 3 作者
(92) Investigations of wettability of graphene on a micron-scale hole array substrate, RSC ADVANCES, 2015, 第 7 作者
(93) Green light emitting diode grown on thick strain-reduced GaN template, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 通讯作者
(94) Large-Area and Ordered Sexfoil Pore Arrays by Spherical-Lens Photolithography, ACS PHOTONICS, 2014, 第 6 作者
(95) Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography, JOURNAL OF APPLIED PHYSICS, 2014, 通讯作者
(96) Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes, AIP ADVANCES, 2014, 通讯作者
(97) Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes, OPTICS LETTERS, 2014, 通讯作者
(98) AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency, JOURNAL OF CRYSTAL GROWTH, 2014, 第 9 作者
(99) Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays, JOURNAL OF CRYSTAL GROWTH, 2014, 通讯作者
(100) Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence, JOURNAL OF APPLIED PHYSICS, 2014, 第 6 作者
(101) 物理学奖:蓝光LED成就全新高效光源, 科学世界, 2014, 第 2 作者
(102) Hydride vapor phase epitaxy of high quality {10(1)over-bar(3)over-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres, JOURNAL OF CRYSTAL GROWTH, 2014, 通讯作者
(103) Defect reduction in semipolar {10(1)over-bar(3)over-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth, CRYSTENGCOMM, 2014, 第 2 作者
(104) Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography, CHINESE PHYSICS B, 2014, 通讯作者
(105) Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal, SMALL, 2014, 第 2 作者
(106) Defects reduction in semipolar {10 3} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth, CrystEngComm, 16, 4562 (2014), 2014, 通讯作者
(107) Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst, CHINESE PHYSICS B, 2014, 第 9 作者
(108) 第3代半导体材料在光电器件方面的发展和应用, 新材料产业, 2014, 第 3 作者
(109) Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography, JOURNAL OF APPLIED PHYSICS, 2014, 通讯作者
(110) Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography, APPLIED PHYSICS LETTERS, 2014, 通讯作者
(111) Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes, OPTICS EXPRESS, 2014, 通讯作者
(112) Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals, OPTICS EXPRESS, 2014, 通讯作者
(113) Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates, IEEE PHOTONICS JOURNAL, 2014, 通讯作者
(114) The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing, AIP ADVANCES, 2014, 通讯作者
(115) Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes, OPTICS EXPRESS, 2013, 通讯作者
(116) Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography, APPLIED PHYSICS LETTERS, 2013, 通讯作者
(117) Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier, ECS SOLID STATE LETTERS, 2013, 第 2 作者
(118) Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography, APPLIED PHYSICS LETTERS, 2013, 
(119) 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates, APPLIED PHYSICS LETTERS, 2013, 第 6 作者
(120) Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier, ECS SOLID STATE LETT., 2013, 
(121) Improvement of carrier distribution in dual wavelength light-emitting diodes, JOURNAL OF SEMICONDUCTORS, 2013, 第 2 作者
(122) Shape designing for light extraction enhancement bulk-GaN light-emitting diodes, JOURNAL OF APPLIED PHYSICS, 2013, 第 3 作者
(123) Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography, AIP ADVANCES, 2013, 通讯作者
(124) Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices, RSC ADVANCES, 2013, 第 8 作者
(125) Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 第 2 作者
(126) Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching, NANOTECHNOLOGY, 2013, 第 5 作者
(127) Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages, JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 第 4 作者
(128) Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes, OPTICS EXPRESS, 2012, 第 4 作者
(129) Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres, MATERIALS LETTERS, 2012, 
(130) Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface, OPTICS EXPRESS, 2012, 第 3 作者
(131) Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes, APPLIED PHYSICS LETTERS, 2012, 第 3 作者
(132) Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes, IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 第 4 作者
(133) Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays, IEEE ELECTRON DEVICE LETTERS, 2012, 
(134) Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 第 2 作者
(135) Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography, WEI TB (WEI, TONGBO); WU K (WU, KUI); LAN D (LAN, DING); YAN QF (YAN, QINGFENG); CHEN Y (CHEN, YU); DU CX (DU, CHENGXIAO); WANG JX (WANG, JUNXI); ZENG YP (ZENG, YIPING); LI JM (LI, JINMIN), 2012, 
(136) Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres, JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 通讯作者
(137) Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography, APPLIED PHYSICS LETTERS, 2012, 通讯作者
(138) Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate, APPLIED PHYSICS LETTERS, 2011, 通讯作者
(139) MOCVD epitaxy of InAlN on different templates, MOCVD epitaxy of InAlN on different templates, 半导体学报, 2011, 第 2 作者
(140) Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer, Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer, 半导体学报, 2011, 第 3 作者
(141) Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer, Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer, 半导体学报, 2011, 第 3 作者
(142) MOCVD epitaxy of InAlN on different templates, MOCVD epitaxy of InAlN on different templates, JOURNAL OF SEMICONDUCTORS, 2011, 第 2 作者
(143) Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands, OPTICS EXPRESS, 2011, 通讯作者
(144) Defect-related emission characteristics of nonpolar m-plane gan revealed by selective etching, JOURNAL OF CRYSTAL GROWTH, 2011, 
(145) InAlN薄膜MOCVD外延生长研究, Research on InAlN Film Grown by Metal Organic Chemical Vapor Deposition, 半导体技术, 2011, 第 2 作者
(146) Preparation and optical performance of freestanding gan thick films, RARE METAL MATERIALS AND ENGINEERING, 2010, 第 2 作者
(147) 自支撑GaN厚膜制备及其光学性能研究, Preparation and Optical Performance of Freestanding GaN Thick Films, 稀有金属材料与工程, 2010, 第 2 作者
(148) Hydride vapor phase epitxay growth of semipolar (10 ) GaN on patterned m-plane sapphire, Journal of The Electrochemical Society, 2010, 157: H721, 2010, 第 1 作者
(149) Catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 通讯作者
(150) Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation, NANOSCALE RESEARCH LETTERS, 2009, 通讯作者
(151) Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE, CHINESE PHYSICS LETTERS, 2009, 第 2 作者
(152) Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE, Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE, 中国物理快报:英文版, 2009, 第 2 作者
(153) Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 通讯作者
(154) HVPE气相外延法在c面蓝宝石上选区外延生长GaN及其表征, Selective Area Growth and Characterization of GaN Grown on c-Sapphire by Hydride Vapor Phase Epitaxy, 半导体学报, 2008, 第 4 作者
(155) Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE, Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE, 中国物理快报:英文版, 2007, 第 1 作者
(156) AlGaN基UV—LED的研究与进展, Research and recent progress in AIGaN -based UV -LED, 功能材料与器件学报, 2007, 第 1 作者
(157) Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE, Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE, CHINESE PHYSICS LETTERS, 2007, 通讯作者
(158) MOCVD生长GaN力学性能研究, Study on Mechanical Properties of GaN Epitaxy Films Grown on Sapphire by MOCVD, 稀有金属材料与工程, 2007, 第 1 作者
(159) Si基外延GaN的结构和力学性能, Study on structure and mechanical properties of GaN epitaxy films grown on Si by MOCVD, 材料研究学报, 2007, 第 1 作者
(160) Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD, RARE METAL MATERIALS AND ENGINEERING, 2007, 通讯作者
(161) Structural and Optical Performance of GaN Thick Film Grown by HVPE, 半导体学报, 2007, 第 1 作者
(162) 竖直式HVPE反应系统的理论模拟与GaN厚膜生长, Theoretical Simulation of Vertical HVPE Reactor and GaN Thick Film Growth, 半导体学报, 2007, 第 3 作者
(163) HVPE生长GaN厚膜的结构和光学性能, Structural and Optical Performance of GaN Thick Film Grown by HVPE, 半导体学报, 2007, 第 1 作者
(164) 蓝宝石衬底上HVPE-GaN厚膜生长, Growth of GaN Thick Film by HVPE on Sapphire Substrate, 半导体学报, 2007, 第 2 作者
发表著作
( 1 ) 氮化物半导体准范德华外延材料与器件, Quasi van der Waals Epitaxy of Nitride Semiconductor and its applicaiton, 西安电子科技大学出版社, 2022-10, 第 1 作者

科研活动

   
科研项目
( 1 ) GaN基纳米柱LED选区外延及相关光电基础科学问题研究, 负责人, 国家任务, 2015-01--2018-12
( 2 ) 第三代半导体新型照明材料与器件研究, 负责人, 国家任务, 2018-05--2021-04
( 3 ) 二维石墨烯柔性转移氮化物LED的生长与机制研究, 负责人, 地方任务, 2018-01--2020-12
( 4 ) 石墨烯上准范德华外延AlN及辅助剥离垂直结构深紫外LED研究, 负责人, 国家任务, 2020-01--2023-12
( 5 ) 第三代半导体中压电-电/光耦合新效应、材料与器件研究, 负责人, 国家任务, 2022-01--2026-12
( 6 ) 面向公共卫生等领域的深紫外LED模组和装备开发 及应用示范, 负责人, 国家任务, 2022-11--2025-10
参与会议
(1)Cross-st acked carbon nanotubes assisted self-separation offree-standing GaN substrates by hydride vapor phase epitaxy   2015-08-31