基本信息
冯春  女  硕导  中国科学院半导体研究所
email: cfeng@semi.ac.cn
address: 北京市海淀区清华东路甲35号1号路606
postalCode:

招生信息

   
招生专业
0805Z2-半导体材料与器件
招生方向
宽禁带半导体材料物理,半导体材料MOCVD生长、宽禁带半导体电力电子器件

教育背景

2004-09--2009-07   中国科学院半导体研究所   获得博士学位
2000-09--2004-07   北京航空航天大学   获得工学学士学位

工作经历

   
工作简历
2015-01~现在, 中国科学院半导体研究所, 任副研究员
2009-09~2014-12,中国科学院半导体研究所, 任助理研究员
2004-09~2009-07,中国科学院半导体研究所, 获得博士学位
2000-09~2004-07,北京航空航天大学, 获得工学学士学位

教授课程

宽禁带半导体电子器件
半导体的霍尔效应及霍尔检测方法
半导体材料检测技术

专利与奖励

   
奖励信息
(1) 高性能GaN外延材料, 二等奖, 部委级, 2012
专利成果
( 1 ) MOFET器件, 2020, 第 3 作者, 专利号: ZL201910175096.8

( 2 ) 一种混合极性InGaN太阳能电池结构, 2020, 第 4 作者, 专利号: ZL201810091655.2

( 3 ) 可调节的感应线圈装置, 2018, 第 2 作者, 专利号: 201811421443.2

( 4 ) 用于金属有机化合物化学气相沉积设备反应室的进气顶盘, 2015, 第 5 作者, 专利号: 201510002676.9

( 5 ) 一种基于GaN基异质结构的二极管结构及制作方法, 2014, 第 5 作者, 专利号: 201410112734.9

( 6 ) 源输送混合比可调气路装置, 2014, 第 5 作者, 专利号: 201410092524.8

( 7 ) 密封传动装置, 2014, 第 5 作者, 专利号: 201410018204.8

( 8 ) 具势垒层的氮化镓基高电子迁移率晶体管结构及制作方法, 2013, 第 5 作者, 专利号: 201310048977.6

( 9 ) 一种对气体传感器或半导体器件性能进行测试的系统, 2011, 第 3 作者, 专利号: ZL200610112883.0

出版信息

   
发表论文
(1) Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 通讯作者
(2) TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT, JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 第 6 作者
(3) Optimization of Finite-Zone Implanted Edge Termination for beta-Ga2O3 SBD, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 通讯作者
(4) Comparative Study on Characteristics of AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 通讯作者
(5) A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches, OPTICS COMMUNICATIONS, 2021, 第 4 作者
(6) The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT, MICROMACHINES, 2021, 第 7 作者
(7) Simulation Study of Performance Degradation in β-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, Journal of Solid State Science and Technology, 2021, 通讯作者
(8) Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 第 3 作者
(9) Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 第 4 作者
(10) A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications, ELECTRONICS, 2021, 第 6 作者
(11) Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 通讯作者
(12) Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate, JOURNAL OF ELECTRONIC MATERIALS, 2021, 第 4 作者
(13) Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 第 5 作者
(14) Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*, CHINESE PHYSICS B, 2021, 第 6 作者
(15) Comparative Study of SiC Planar MOSFETs With Different p-Body Designs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 第 5 作者
(16) Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 第 7 作者
(17) Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 第 6 作者
(18) Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET, IEEE ELECTRON DEVICE LETTERS, 2019, 第 5 作者
(19) Design and Fabrication of 3300V 100m Omega 4H-SiC MOSFET with Stepped p-body Structure, 2019 16TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2019 INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2019, 第 5 作者
(20) Simulation and Optimization of Temperature Distribution in Induction Heating Reactor, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 6 作者
(21) Theoretical analysis of induction heating in high-temperature epitaxial growth system, AIP ADVANCES, 2018, 第 7 作者
(22) X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 6 作者
(23) Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 4 作者
(24) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, CHINESE PHYSICS LETTERS, 2018, 第 6 作者
(25) Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 3 作者
(26) Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer, NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 第 4 作者
(27) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, 中国物理快报:英文版, 2018, 第 6 作者
(28) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, 中国物理快报:英文版, 2017, 第 6 作者
(29) Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor, CHINESE PHYSICS LETTERS, 2017, 第 6 作者
(30) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, CHINESE PHYSICS LETTERS, 2017, 第 6 作者
(31) Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor, Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor, 中国物理快报:英文版, 2017, 第 6 作者
(32) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors, CHINESE PHYSICS LETTERS, 2015, 第 7 作者
(33) Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 第 6 作者
(34) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/A1N/GaN Heterojunction Field Effect Transistors, CHINESE PHYSICS LETTERS, 2015, 第 7 作者
(35) Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 第 6 作者
(36) High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes, CHINESE PHYSICS LETTERS, 2014, 第 6 作者
(37) Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 第 6 作者
(38) Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation, JOURNAL OF APPLIED PHYSICS, 2014, 第 9 作者
(39) High performance AlGaN/GaN power switch with Si3N4 insulation, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 第 7 作者
(40) Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width, JOURNAL OF APPLIED PHYSICS, 2013, 第 7 作者
(41) Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers, JOURNAL OF CRYSTAL GROWTH, 2013, 第 7 作者
(42) The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy, CHINESE PHYSICS LETTERS, 2013, 第 5 作者
(43) Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors, JOURNAL OF SEMICONDUCTORS, 2013, 第 4 作者
(44) Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer, JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 第 7 作者
(45) Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 第 7 作者
(46) Comparison of as-grown and annealed gan/ingan:mg samples, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 9 作者
(47) Surface characterization of algan grown on si (111) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 5 作者
(48) Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode, ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, 2008, 第 4 作者
(49) Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, 中国物理快报:英文版, 2008, 第 9 作者
(50) Effect of CO on Characteristics of AlGaN/GaN Schottky Diode, Effect of CO on Characteristics of AlGaN/GaN Schottky Diode, CHINESE PHYSICS LETTERS, 2008, 通讯作者
(51) AlGaN/GaN背对背肖特基二极管氢气传感器, Hydrogen Sensors Based on AIGaN/GaN Back-to-Back Schottky Diodes, 半导体学报, 2008, 第 3 作者
(52) AlGaN-GaN型气体传感器对CO的响应研究, 半导体学报, 2008, 第 1 作者
(53) Hydrogen sensors based on AlGaN/AlN/GaN HEMT, MICROELECTRONICS JOURNAL, 2008, 
(54) AlGaN/GaN型气敏传感器对于CO的响应研究, A Carbon Monoxide Gas Sensor Based on an AlGaN/GaN Structure, 半导体学报, 2008, 第 1 作者
(55) AlGaN/GaN型气敏传感器对于C0的响应研究, 半导体学报, 2008, 第 1 作者
(56) AlGaN/GaN异质结气体传感器对低体积分数CO的响应研究, 半导体技术, 2008, 第 1 作者
(57) AlGaN/AlN/GaN肖特基二极管的电学性能, Electrical Characteristic of AlGaN/AlN/GaN Schottky Diode, 半导体学报, 2007, 第 8 作者

科研活动

   
科研项目
( 1 ) 面向下一代移动通信的GaN基射频器件关键技术及系统应用-高效率器件研究, 参与, 国家任务, 2016-01--2020-12
( 2 ) GaN功率器件与MMIC, 参与, 国家任务, 2017-01--2020-12
( 3 ) 大功率低插损GaN基开关关键技术, 参与, 国家任务, 2022-11--2025-10