基本信息
冯春 女 硕导 中国科学院半导体研究所
电子邮件: cfeng@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号1号路606
邮政编码:
电子邮件: cfeng@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号1号路606
邮政编码:
教育背景
2004-09--2009-07 中国科学院半导体研究所 获得博士学位2000-09--2004-07 北京航空航天大学 获得工学学士学位
工作经历
工作简历
2015-01~现在, 中国科学院半导体研究所, 任副研究员2009-09~2014-12,中国科学院半导体研究所, 任助理研究员2004-09~2009-07,中国科学院半导体研究所, 获得博士学位2000-09~2004-07,北京航空航天大学, 获得工学学士学位
教授课程
宽禁带半导体电子器件半导体的霍尔效应及霍尔检测方法半导体材料检测技术
专利与奖励
奖励信息
(1) 高性能GaN外延材料, 二等奖, 部委级, 2012
专利成果
( 1 ) MOFET器件, 2020, 第 3 作者, 专利号: ZL201910175096.8( 2 ) 一种混合极性InGaN太阳能电池结构, 2020, 第 4 作者, 专利号: ZL201810091655.2( 3 ) 可调节的感应线圈装置, 2018, 第 2 作者, 专利号: 201811421443.2( 4 ) 用于金属有机化合物化学气相沉积设备反应室的进气顶盘, 2015, 第 5 作者, 专利号: 201510002676.9( 5 ) 一种基于GaN基异质结构的二极管结构及制作方法, 2014, 第 5 作者, 专利号: 201410112734.9( 6 ) 源输送混合比可调气路装置, 2014, 第 5 作者, 专利号: 201410092524.8( 7 ) 密封传动装置, 2014, 第 5 作者, 专利号: 201410018204.8( 8 ) 具势垒层的氮化镓基高电子迁移率晶体管结构及制作方法, 2013, 第 5 作者, 专利号: 201310048977.6( 9 ) 一种对气体传感器或半导体器件性能进行测试的系统, 2011, 第 3 作者, 专利号: ZL200610112883.0
出版信息
发表论文
(1) Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 第 11 作者(2) TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT, JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 第 6 作者(3) Optimization of Finite-Zone Implanted Edge Termination for beta-Ga2O3 SBD, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 第 11 作者(4) Comparative Study on Characteristics of AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 第 11 作者(5) A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches, OPTICS COMMUNICATIONS, 2021, 第 4 作者(6) The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT, MICROMACHINES, 2021, 第 7 作者(7) Simulation Study of Performance Degradation in ��-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, Journal of Solid State Science and Technology, 2021, 第 11 作者(8) Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 第 3 作者(9) Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 第 4 作者(10) A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications, ELECTRONICS, 2021, 第 6 作者(11) Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 第 11 作者(12) Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate, JOURNAL OF ELECTRONIC MATERIALS, 2021, 第 4 作者(13) Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 第 5 作者(14) Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*, CHINESE PHYSICS B, 2021, 第 6 作者(15) Comparative Study of SiC Planar MOSFETs With Different p-Body Designs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 第 5 作者(16) Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 第 7 作者(17) Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 第 6 作者(18) Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET, IEEE ELECTRON DEVICE LETTERS, 2019, 第 5 作者(19) Design and Fabrication of 3300V 100m Omega 4H-SiC MOSFET with Stepped p-body Structure, 2019 16TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2019 INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2019, 第 5 作者(20) Simulation and Optimization of Temperature Distribution in Induction Heating Reactor, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 6 作者(21) Theoretical analysis of induction heating in high-temperature epitaxial growth system, AIP ADVANCES, 2018, 第 7 作者(22) X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 6 作者(23) Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 4 作者(24) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, CHINESE PHYSICS LETTERS, 2018, 第 6 作者(25) Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 3 作者(26) Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer, NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 第 4 作者(27) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, 中国物理快报:英文版, 2018, 第 6 作者(28) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, 中国物理快报:英文版, 2017, 第 6 作者(29) Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor, CHINESE PHYSICS LETTERS, 2017, 第 6 作者(30) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, CHINESE PHYSICS LETTERS, 2017, 第 6 作者(31) Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor, Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor, 中国物理快报:英文版, 2017, 第 6 作者(32) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors, CHINESE PHYSICS LETTERS, 2015, 第 7 作者(33) Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 第 6 作者(34) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/A1N/GaN Heterojunction Field Effect Transistors, CHINESE PHYSICS LETTERS, 2015, 第 7 作者(35) Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 第 6 作者(36) High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes, CHINESE PHYSICS LETTERS, 2014, 第 6 作者(37) Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 第 6 作者(38) Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation, JOURNAL OF APPLIED PHYSICS, 2014, 第 9 作者(39) High performance AlGaN/GaN power switch with Si3N4 insulation, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 第 7 作者(40) Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width, JOURNAL OF APPLIED PHYSICS, 2013, 第 7 作者(41) Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers, JOURNAL OF CRYSTAL GROWTH, 2013, 第 7 作者(42) The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy, CHINESE PHYSICS LETTERS, 2013, 第 5 作者(43) Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors, JOURNAL OF SEMICONDUCTORS, 2013, 第 4 作者(44) Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer, JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 第 7 作者(45) Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 第 7 作者(46) Comparison of as-grown and annealed gan/ingan:mg samples, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 9 作者(47) Surface characterization of algan grown on si (111) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 5 作者(48) Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode, ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, 2008, 第 4 作者(49) Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, 中国物理快报:英文版, 2008, 第 9 作者(50) Effect of CO on Characteristics of AlGaN/GaN Schottky Diode, Effect of CO on Characteristics of AlGaN/GaN Schottky Diode, CHINESE PHYSICS LETTERS, 2008, 第 11 作者(51) AlGaN/GaN背对背肖特基二极管氢气传感器, Hydrogen Sensors Based on AIGaN/GaN Back-to-Back Schottky Diodes, 半导体学报, 2008, 第 3 作者(52) AlGaN-GaN型气体传感器对CO的响应研究, 半导体学报, 2008, 第 1 作者(53) Hydrogen sensors based on AlGaN/AlN/GaN HEMT, MICROELECTRONICS JOURNAL, 2008, (54) AlGaN/GaN型气敏传感器对于CO的响应研究, A Carbon Monoxide Gas Sensor Based on an AlGaN/GaN Structure, 半导体学报, 2008, 第 1 作者(55) AlGaN/GaN型气敏传感器对于C0的响应研究, 半导体学报, 2008, 第 1 作者(56) AlGaN/GaN异质结气体传感器对低体积分数CO的响应研究, 半导体技术, 2008, 第 1 作者(57) AlGaN/AlN/GaN肖特基二极管的电学性能, Electrical Characteristic of AlGaN/AlN/GaN Schottky Diode, 半导体学报, 2007, 第 8 作者
科研活动
科研项目
( 1 ) 大功率低插损GaN基开关关键技术, 参与, 国家任务, 2022-11--2025-10( 2 ) GaN功率器件与MMIC, 参与, 国家任务, 2017-01--2020-12( 3 ) 面向下一代移动通信的GaN基射频器件关键技术及系统应用-高效率器件研究, 参与, 国家任务, 2016-01--2020-12