基本信息
陈平  男  硕导  中国科学院半导体研究所
电子邮件: pchen@semi.ac.cn
通信地址: 北京海淀区清华东路甲35号1号楼214室
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
氮化物光电子材料外延生长和器件研制
GaN基激光器
场发射材料及器件

教育背景

2003-09--2008-06   中国科学院研究生院   博士
1999-09--2003-06   中国科学技术大学   学士

工作经历

   
工作简历
2018-01~现在, 中国科学院半导体研究所, 研究员
2017-09~2019-09,美国佐治亚理工学院, 访问学者
2013-01~2017-12,中国科学院半导体研究所, 副研究员
2008-07~2012-12,中国科学院半导体研究所, 助理研究员
2003-09~2008-06,中国科学院研究生院, 博士
1999-09~2003-06,中国科学技术大学, 学士

教授课程

宽禁带半导体光电子材料与器件

专利与奖励

   
专利成果
( 1 ) 氮化镓基激光器及其制备方法, 2020, 第 6 作者, 专利号: CN112134143A

( 2 ) InGaN/GaN量子阱结构及LED外延片制备方法, 2020, 第 5 作者, 专利号: CN109888069B

( 3 ) 碳掺杂调控的GaN基HEMT外延结构及其制作方法, 2020, 第 6 作者, 专利号: CN111952365A

( 4 ) 具有非对称In组分InGaN波导层的氮化镓基激光器, 2020, 第 7 作者, 专利号: CN111900624A

( 5 ) 改善p型氮化镓欧姆的方法, 2020, 第 5 作者, 专利号: CN111446622A

( 6 ) 低比接触电阻率的p型接触层以及氮化镓基紫外激光器, 2020, 第 1 作者, 专利号: CN111446624A

( 7 ) 低V型缺陷密度的GaN基多量子阱激光器外延片及制备方法, 2020, 第 4 作者, 专利号: CN109873299B

( 8 ) 一种高欧姆接触特性的p型GaN外延片及其制备方法, 2019, 第 4 作者, 专利号: CN109860044A

( 9 ) 一种绿光激光器外延片及其制备方法, 2019, 第 3 作者, 专利号: CN105449522B

( 10 ) 应力调控波导层绿光激光器外延片及其制备方法, 2018, 第 3 作者, 专利号: CN105811243B

( 11 ) 倒装阳极的纳米真空三极管结构及制备方法, 2018, 第 2 作者, 专利号: CN105118762B

( 12 ) 具有非对称Al组分AlGaN限制层的氮化镓基激光器, 2018, 第 1 作者, 专利号: CN104734015B

( 13 ) InGaN/GaN异质外延结构及其生长方法, 2018, 第 3 作者, 专利号: CN108598192A

( 14 ) 低电阻率P型氮化镓材料及其制备方法, 2018, 第 3 作者, 专利号: CN105513951B

( 15 ) 一种提高氮化镓基激光器性能的方法, 2018, 第 5 作者, 专利号: CN105048285B

( 16 ) 金属有机化合物气相沉积反应装置的反应基座, 2018, 第 3 作者, 专利号: CN105803425B

( 17 ) 绿光LED芯片外延层的结构及生长方法, 2018, 第 3 作者, 专利号: CN105047772B

( 18 ) 一种激光器及其制作方法, 2018, 第 4 作者, 专利号: CN104269740B

( 19 ) 降低电子泄漏的砷化镓激光器的制作方法, 2018, 第 5 作者, 专利号: CN104300366B

( 20 ) 同时降低发散角和阈值电流的激光器的制备方法, 2018, 第 5 作者, 专利号: CN104300365B

( 21 ) 抑制GaAs基激光器高阶模的方法, 2017, 第 5 作者, 专利号: CN104300367B

( 22 ) 低电阻率低温P型铝镓氮材料的制备方法, 2017, 第 3 作者, 专利号: CN104201256B

( 23 ) 基于二维岛的InGaN量子点外延结构及制备方法, 2017, 第 3 作者, 专利号: CN105206725B

( 24 ) GaN基紫外激光器晶圆、激光器芯片及激光器及其制备方法, 2017, 第 5 作者, 专利号: CN107069433A

( 25 ) Al x Ga 1-x N基紫外探测器及制备方法, 2016, 第 6 作者, 专利号: CN105374903A

( 26 ) 碳化硅衬底上的AlN冷阴极结构, 2015, 第 1 作者, 专利号: CN104658830A

( 27 ) InGaN量子点的外延结构及生长方法, 2015, 第 3 作者, 专利号: CN104538524A

( 28 ) 制备低比接触电阻率的p-GaN欧姆接触的方法, 2015, 第 6 作者, 专利号: CN104392916A

( 29 ) 可以减少AlN冷阴极表面氧化的电子接收结构, 2015, 第 1 作者, 专利号: CN104681374A

( 30 ) 小型化、集成化的硅基场发射-接收器件, 2015, 第 1 作者, 专利号: CN104658831A

( 31 ) 阶梯状组分渐变的AlN薄膜型冷阴极, 2015, 第 1 作者, 专利号: CN104658829A

( 32 ) 氮化镓同质衬底上激光器量子阱有源区的同温生长方法, 2015, 第 2 作者, 专利号: CN104617487A

( 33 ) 一种具有低电子泄漏的砷化镓激光器及其制作方法, 2015, 第 5 作者, 专利号: CN104600565A

( 34 ) 提高激光器量子阱载流子限制能力的制备方法, 2015, 第 5 作者, 专利号: CN104577712A

( 35 ) 降低Ni/Au与p-GaN欧姆接触的比接触电阻率的方法, 2015, 第 6 作者, 专利号: CN104409344A

( 36 ) 绿光LED外延层结构及生长方法, 2015, 第 3 作者, 专利号: CN104393132A

( 37 ) 一种具有平面型发射阴极的纳米真空三极管及其制作方法, 2015, 第 2 作者, 专利号: CN104299988A

( 38 ) 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法, 2014, 第 5 作者, 专利号: CN104141171A

( 39 ) 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池, 2014, 第 3 作者, 专利号: CN104201220A

( 40 ) 高密度高均匀InGaN量子点结构及生长方法, 2014, 第 3 作者, 专利号: CN104157759A

( 41 ) 减小GaN基蓝紫光端发射激光器电子泄漏的方法, 2014, 第 5 作者, 专利号: CN103956653A

( 42 ) 高电阻低位错GaN薄膜及制备方法, 2014, 第 5 作者, 专利号: CN103887326A

( 43 ) 一种高阻GaN薄膜的制备方法, 2014, 第 5 作者, 专利号: CN103578986A

( 44 ) 改进p-GaN薄膜欧姆接触的材料结构及其制备方法, 2013, 第 5 作者, 专利号: CN103077964A

( 45 ) 一种测量直接带隙半导体材料禁带宽度的装置和方法, 2013, 第 3 作者, 专利号: CN102937585A

( 46 ) InGaN太阳能电池及其制作方法, 2012, 第 5 作者, 专利号: CN102832272A

( 47 ) 测量肖特基势垒高度的装置和方法, 2012, 第 3 作者, 专利号: CN102735665A

( 48 ) 一种硅基集成化光学异或及同或运算阵列, 2012, 第 3 作者, 专利号: CN102436116A

( 49 ) 一种硅基集成化的光学加密调制器, 2011, 第 3 作者, 专利号: CN102062896A

( 50 ) 基于微环谐振器的集成化光学向量-矩阵乘法器, 2011, 第 6 作者, 专利号: CN102023672A

( 51 ) 基于微环谐振器的集成化可重构光插分复用器, 2010, 第 7 作者, 专利号: CN101840028A

( 52 ) 一种硅基集成化光学异或及同或运算单元及其阵列, 2010, 第 3 作者, 专利号: CN101872101A

( 53 ) 一种集成化可重构光插分复用器, 2010, 第 7 作者, 专利号: CN101840029A

( 54 ) 可扩展和重构的二维自由空间光学互连系统, 2010, 第 1 作者, 专利号: CN101813808A

出版信息

   
发表论文
(1) The role of InGaN quantum barriers in improving the performance of GaN-based laser diodes, OPTICS AND LASER TECHNOLOGY, 2022, 第 6 作者
(2) Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer, OPTICAL MATERIALS EXPRESS, 2021, 第 6 作者
(3) Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector, OPTICAL MATERIALS EXPRESS, 2021, 第 6 作者
(4) Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells, NANOMATERIALS, 2021, 第 7 作者
(5) Performance improvement of GaN-based blue and ultraviolet double quantum well laser diodes by using stepped-doped lower waveguide, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 5 作者
(6) Characteristics of InGaN-based green laser diodes with additional InGaN hole reservoir layer, VACUUM, 2021, 第 5 作者
(7) Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN, OPTICS EXPRESS, 2021, 第 6 作者
(8) Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment, APPLIED SURFACE SCIENCE, 2020, 第 8 作者
(9) 光场分布对GaN基绿光激光器的影响, Influence of Optical Field Distribution on GaN-Based Green Laser Diodes, 中国激光, 2020, 第 6 作者
(10) Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure, OPTICAL MATERIALS, 2020, 第 6 作者
(11) Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift, Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift, CHINESE PHYSICS B, 2020, 第 1 作者
(12) Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer, NANOPHOTONICS, 2020, 第 7 作者
(13) Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures, JOURNAL OF ELECTRONIC MATERIALS, 2020, 第 1 作者
(14) 高增益GaN基PIN雪崩二极管的制备及p-GaN层载流子浓度的估算, Fabrication of High Gain GaN Based PIN Avalanche Diode and Estimation of p-GaN Layer Carrier Concentration, 发光学报, 2020, 第 5 作者
(15) Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells, OPTICAL MATERIALS EXPRESS, 2019, 第 6 作者
(16) Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process, Nanoscale Research Letters, 2019, 第 7 作者
(17) Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence, Nanoscale Research Letters, 2019, 第 6 作者
(18) Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes, SUPERLATTICES AND MICROSTRUCTURES, 2019, 第 7 作者
(19) Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide, SUPERLATTICES AND MICROSTRUCTURES, 2019, 第 6 作者
(20) Optical stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures, LIGHT-EMITTING DEVICES, MATERIALS, AND APPLICATIONS, 2019, 
(21) Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers, IEEE PHOTONICS JOURNAL, 2018, 第 6 作者
(22) Suppression of electron and hole overflow in gan-based near-ultraviolet laser diodes, CHINESE PHYSICS B, 2018, 第 7 作者
(23) Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption, APPLIED SURFACE SCIENCE, 2018, 第 6 作者
(24) Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in ingan/gan multi-quantum wells, OPTICS EXPRESS, 2018, 第 6 作者
(25) Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104), SUPERLATTICES AND MICROSTRUCTURES, 2018, 第 7 作者
(26) Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of ingan/gan multiple quantum wells, OPTICS EXPRESS, 2018, 第 7 作者
(27) Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN, NANOMATERIALS, 2018, 第 6 作者
(28) Influence of carrier gas H_2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures, CHINESE PHYSICS B, 2018, 第 6 作者
(29) Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN, NANOMATERIALS, 2018, 第 6 作者
(30) Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 第 6 作者
(31) Performance enhancement of the gan-based laser diode by using an unintentionally doped gan upper waveguide, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 6 作者
(32) The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells, SUPERLATTICES AND MICROSTRUCTURES, 2018, 第 6 作者
(33) Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes, Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes, CHINESE PHYSICS B, 2017, 第 6 作者
(34) Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells, IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 第 4 作者
(35) Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes, AIP ADVANCES, 2017, 
(36) Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, CHINESE PHYSICS B, 2017, 
(37) The residual C concentration control for low temperature growth p-type GaN, CHINESE PHYSICS B, 2017, 第 6 作者
(38) Performance Improvement of GaN-Based Violet Laser Diodes, Performance Improvement of GaN-Based Violet Laser Diodes, 中国物理快报:英文版, 2017, 第 5 作者
(39) Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 第 6 作者
(40) Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact, APPLIED OPTICS, 2017, 第 6 作者
(41) Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes, Phys. Status Solidi A, 2017, 第 6 作者
(42) Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement, MATERIALS RESEARCH EXPRESS, 2017, 第 4 作者
(43) Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes, IEEE PHOTONICS JOURNAL, 2017, 第 4 作者
(44) Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination, JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 第 4 作者
(45) Performance Improvement of GaN-Based Violet Laser Diodes, Performance Improvement of GaN-Based Violet Laser Diodes, CHINESE PHYSICS LETTERS, 2017, 第 5 作者
(46) New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode, OPTICS AND LASER TECHNOLOGY, 2017, 第 6 作者
(47) Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials, CHINESE PHYSICS B, 2017, 第 4 作者
(48) Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer, JOURNAL OF CRYSTAL GROWTH, 2017, 第 6 作者
(49) Suppression of optical field leakage to GaN substrate in GaN-based green laser diode, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 6 作者
(50) Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths, CHINESE PHYSICS B, 2017, 第 5 作者
(51) Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC, CHINESE PHYSICS B, 2016, 通讯作者
(52) Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathodee, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 通讯作者
(53) Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films, CHINESE PHYSICS B, 2016, 第 4 作者
(54) Comparative study of the differential resistance of GaAs- and GaN-based laser diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 第 5 作者
(55) Large filed emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC, Chem. Phys. Lett., 2016, 通讯作者
(56) Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 第 4 作者
(57) Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 第 4 作者
(58) Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode, Journal of vacuum science & technology b, 2016, 第 2 作者
(59) Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer, JOURNAL OF SEMICONDUCTORS, 2016, 第 4 作者
(60) Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity, IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 通讯作者
(61) The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes, AIP ADVANCES, 2016, 
(62) Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes, SUPERLATTICES AND MICROSTRUCTURES, 2016, 第 4 作者
(63) Effect of localization states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 第 4 作者
(64) Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage, CHINESE PHYSICS B, 2015, 第 2 作者
(65) Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode, CHINESE PHYSICS B, 2015, 第 4 作者
(66) Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer, CHINESE PHYSICS B, 2015, 第 4 作者
(67) Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching, JOURNAL OF SEMICONDUCTORS, 2015, 第 4 作者
(68) Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 第 4 作者
(69) Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si(111) substrate, CHINESE PHYSICS B, 2015, 第 6 作者
(70) Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure, CHINESE PHYSICS B, 2015, 第 5 作者
(71) Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN, CHINESE PHYSICS B, 2015, 
(72) Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 第 4 作者
(73) Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon, JOURNAL OF SEMICONDUCTORS, 2015, 第 6 作者
(74) Effect of localizaiton states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells, Journal of vacuum science & technology a, 2015, 第 4 作者
(75) The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 
(76) Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 第 5 作者
(77) Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 第 4 作者
(78) Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes, CHINESE PHYSICS B, 2014, 第 5 作者
(79) Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 第 5 作者
(80) Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells, CHINESE PHYSICS B, 2014, 第 5 作者
(81) Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth, IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 第11作者
(82) Influence of different annealing temperature and atmosphere on the Ni-Au Ohmic contact to p-GaN, ACTA PHYSICA SINICA, 2013, 第 8 作者
(83) Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition, Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition, Acta physica sinica, 2013, 第 5 作者
(84) A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe, CHINESE PHYSICS LETTERS, 2013, 第 1 作者
(85) Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime, CHINESE PHYSICS B, 2013, 第 5 作者
(86) Influence of growth conditions on the lateral grain size of AIN film grown by metal-organic chemical vapor deposition, ACTA PHYSICA SINICA, 2013, 第 5 作者
(87) The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells, CHINESE PHYSICS B, 2013, 第 5 作者
(88) The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN GaN Solar Cells, CHINESE PHYSICS LETTERS, 2013, 第 5 作者
(89) Influence of different annealing temperature and atmosphere on the Ni-Au Ohmic contact to p-GaN, ACTA PHYSICA SINICA, 2013, 第 8 作者
(90) Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer, JOURNAL OF APPLIED PHYSICS, 2012, 
(91) Quadratic electro-optic effect in GaN-based materials, APPLIED PHYSICS LETTERS, 2012, 
(92) Directed XOR/XNOR logic circuit implemented by microring resonators: simulation and demonstration, 3rd international photonics and optoelectronics meetings (poem 2010), 276: art. no. 012105 2011, 2011, 
(93) Compact four-channel reconfigurable optical add-drop multiplexer using silicon photonic wire (vol 282, pg 3477, 2009), OPTICS COMMUNICATIONS, 2010, 第 5 作者
(94) Dispersion characteristics of nanometer-scaled silicon rib waveguides, CHINESE OPTICS LETTERS, 2010, 第 5 作者
(95) Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device, Solar energy materials and solar cells, 94 (2): feb 2010, 2010, 
(96) Demonstration of directed xor/xnor logic gates using two cascaded microring resonators, OPTICS LETTERS, 2010, 第 7 作者
(97) A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide, 8th pacific rim conference on lasers and electro-optics, 2009, 
(98) A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide, 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2, 2009, 
(99) Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide, 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2, 2009, 
(100) Compact four-channel reconfigurable optical add-drop multiplexer using silicon photonic wire, OPTICS COMMUNICATIONS, 2009, 第 5 作者
(101) Effects of waveguide length and pump power on the efficiency of wavelength conversion in silicon nanowire waveguides, OPTICS LETTERS, 2009, 第 5 作者
(102) Wavelength conversion based on degenerate-four-wave-mixing with continuous-wave pumping in silicon nanowire waveguide, OPTICS COMMUNICATIONS, 2009, 第 5 作者
(103) Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide, OPTICS EXPRESS, 2009, 第 5 作者
(104) Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide, 8th pacific rim conference on lasers and electro-optics, 2009, 
(105) Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide: erratum, OPTICS EXPRESS, 2009, 第 5 作者
(106) Interaction between the intrinsic second- and third-order optical fields in an al0.53ga0.47n/gan heterostructure, APPLIED PHYSICS LETTERS, 2008, 
(107) GaN 基半导体材料的非线性光学性质研究, 2008, 第 1 作者
(108) Enhanced pockels effect in gan/alxga1-xn superlattice measured by polarization-maintaining fiber mach-zehnder interferometer, APPLIED PHYSICS LETTERS, 2007, 
(109) 利用保偏光纤马赫-曾德(MZ)干涉仪测量薄膜材料电光系数, Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer, 半导体学报, 2007, 第 3 作者
(110) 利用保偏光纤马赫-曾德(MZ)干涉仪测量薄膜材料电光系数, Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer, 半导体学报, 2007, 第 3 作者
(111) GaN非线性光学效应研究进展, GESEARCH PROGRESS OF THE OPTICAL NONLINEARITIES OF GAN, 物理学进展, 2005, 第 1 作者

科研活动

   
科研项目
( 1 ) 负电子亲和势AlN冷阴极材料的平面电子发射特性研究, 负责人, 国家任务, 2014-01--2017-12
( 2 ) 宽带隙半导体激光器关键科学问题研究, 参与, 国家任务, 2013-01--2016-12
( 3 ) 中国科学院青年创新促进会, 负责人, 中国科学院计划, 2014-01--2017-12
( 4 ) 低In组分InGaN量子阱中载流子泄漏的抑制及GaN基近紫外激光器研究, 负责人, 国家任务, 2017-01--2020-12
( 5 ) 第三代半导体固态紫外光源材料及器件关键技术, 参与, 国家任务, 2016-07--2021-06
( 6 ) 硅衬底ALGaN基紫外LED, 参与, 中国科学院计划, 2017-01--2018-12
( 7 ) GaN基紫外垂直腔面发射激光器的量子效率调控和器件研制, 负责人, 国家任务, 2021-01--2024-12
( 8 ) 强辐射场下常温工作的AlN基大灵敏区辐射探测器的应力调控和噪声抑制, 负责人, 国家任务, 2022-01--2025-12
( 9 ) 激光模式耦合与动态光场基础物理, 负责人, 中国科学院计划, 2020-01--2024-12
参与会议
(1)Growth of AlGaN/InGaN multiple quantum wells and p-AlGaN layers for 369nm ultraviolet light emitting devices   2019-07-28
(2)Epitaxial growth and optically pumped stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures   2019-06-26
(3)Material growth and device fabrication of GaN-based ultraviolet laser diodes   2019-02-02
(4)Material growth and device fabrication of GaN-based laser diodes in ultraviolet region from 390 nm towards 370 nm   2018-06-27