080903-微电子学与固体电子学
070205-凝聚态物理

半导体激光器，探测器
分子束外延，光电子器件，THz器件

1997-09--2002-07   新加坡国立大学   博士
1992-09--1995-07   北京航空航天大学   硕士
1988-09--1992-07   北京航空航天大学   学士

   

2015-09~2016-08,中国科学院半导体研究所, 研究员
2005-09~2015-09,中国科学院半导体研究所, 副研究员
2002-09~2005-07,中国科学院半导体研究所, 博士后
1997-09~2002-07,新加坡国立大学, 博士
1992-09~1995-07,北京航空航天大学, 硕士
1988-09~1992-07,北京航空航天大学, 学士

半导体微纳材料与量子光电子器件
半导体微纳结构光电子与量子器件

   

（ 1 ） 微透镜阵列耦合反射层结构制备方法, 2021, 第 3 作者, 专利号: CN113484941A

（ 2 ） 量子点单光子源、制备方法及其器件的制备方法, 2021, 第 9 作者, 专利号: CN111525005B

（ 3 ） 量子点单光子源及其微透镜阵列的湿法腐蚀制备方法, 2021, 第 3 作者, 专利号: CN111403567B

（ 4 ） 光纤耦合单光子源的滤光和二阶关联度测试装置, 2020, 第 4 作者, 专利号: CN111089648B

（ 5 ） 基于双腔结构的纠缠光源, 2019, 第 3 作者, 专利号: CN110098563A

（ 6 ） 太赫兹天线片上集成器件的转移键合结构及其制备方法, 2017, 第 4 作者, 专利号: CN107359135A

（ 7 ） 电致单光子源器件及其制备方法, 2017, 第 2 作者, 专利号: CN107275452A

（ 8 ） 一种太赫兹波探测器及其制备方法, 2017, 第 3 作者, 专利号: CN107192450A

（ 9 ） 四波长输出半导体激光器及其制备方法, 2017, 第 4 作者, 专利号: CN106451076A

（ 10 ） 单光子源器件光纤阵列耦合输出装置、耦合系统及方法, 2016, 第 4 作者, 专利号: CN106199856A

（ 11 ） 一种电致单光子源器件及其制备方法, 2016, 第 4 作者, 专利号: CN106099642A

（ 12 ） 带有DBR层的太赫兹光电导天线外延结构及制备方法, 2016, 第 3 作者, 专利号: CN105589119A

（ 13 ） 共振隧穿二极管近红外探测器, 2016, 第 2 作者, 专利号: CN105244407A

（ 14 ） 一种新型结构的单光子探测器, 2015, 第 3 作者, 专利号: CN105206702A

（ 15 ） 基于共振隧穿效应的近红外探测器, 2015, 第 3 作者, 专利号: CN105047725A

（ 16 ） GaAs基二维电子气等离子体震荡太赫兹探测器的方法, 2015, 第 5 作者, 专利号: CN104795461A

（ 17 ） 基于Ⅱ型能带匹配的共振隧穿二极管近红外探测器, 2015, 第 2 作者, 专利号: CN104659146A

（ 18 ） 低暗电流的共振隧穿二极管高灵敏度探测器, 2015, 第 2 作者, 专利号: CN104659145A

（ 19 ） 一种高电阻温度系数氧化钒薄膜的制备方法, 2015, 第 5 作者, 专利号: CN104611670A

（ 20 ） 利用AFM的探针制备图形衬底的定位纳米压印系统, 2014, 第 3 作者, 专利号: CN103592818A

（ 21 ） 采用AFM纳米压印图形衬底生长定位量子点的MBE方法, 2014, 第 3 作者, 专利号: CN103594334A

（ 22 ） 一种提高光栅结构均匀度的电子束曝光方法, 2014, 第 5 作者, 专利号: CN103576221A

（ 23 ） 基于高折射率对比度光栅结构的单光子发射器及其制作方法, 2014, 第 5 作者, 专利号: CN103532010A

（ 24 ） 基于分叉纳米线的多端量子调控器件的制备方法, 2014, 第 8 作者, 专利号: CN103531441A

（ 25 ） 制备六棱柱纳米微腔中的量子点单光子源的方法, 2014, 第 6 作者, 专利号: CN103531679A

（ 26 ） 一种非对称沟道量子点场效应光子探测器, 2014, 第 4 作者, 专利号: CN103489937A

（ 27 ） 硅基半导体超短脉冲激光器, 2013, 第 2 作者, 专利号: CN103414106A

（ 28 ） 在GaAs纳米线侧壁利用纳米环作为掩膜生长量子点的方法, 2013, 第 7 作者, 专利号: CN103367588A

（ 29 ） 基于半导体超短脉冲激光器的太赫兹源设备, 2013, 第 1 作者, 专利号: CN103368042A

（ 30 ） 一种光纤与光电子器件垂直耦合的方法, 2013, 第 3 作者, 专利号: CN103345028A

（ 31 ） 一种低密度InAs量子点的分子束外延生长方法, 2013, 第 6 作者, 专利号: CN103194793A

（ 32 ） 在GaAs纳米线侧壁生长同质量子结构的MBE方法, 2013, 第 7 作者, 专利号: CN103165418A

（ 33 ） 自组织单量子点的定位方法及装置, 2013, 第 2 作者, 专利号: CN103163109A

（ 34 ） 制备微透镜阵列的方法, 2013, 第 5 作者, 专利号: CN102967891A

（ 35 ） 多层量子点隧道结串联的有源区宽带增益结构, 2012, 第 1 作者, 专利号: CN102832538A

（ 36 ） 在衬底上生长异变缓冲层的方法, 2011, 第 3 作者, 专利号: CN102194671A

（ 37 ） 一种低密度InAs量子点的分子束外延生长方法, 2011, 第 6 作者, 专利号: CN102034909A

（ 38 ） 在锗衬底上生长无反相畴砷化镓薄膜的分子束外延方法, 2010, 第 7 作者, 专利号: CN101624725A

（ 39 ） 砷化镓基1.5微米量子阱结构及其外延生长方法, 2007, 第 2 作者, 专利号: CN1953217A

（ 40 ） 1.3微米高密度量子点结构及其制备方法, 2006, 第 3 作者, 专利号: CN1786107A

（ 41 ） 气态束源炉瞬态开关控制真空装置, 2006, 第 2 作者, 专利号: CN1255572C

（ 42 ） 高击穿电压的高电子迁移率晶体管, 2005, 第 2 作者, 专利号: CN1707807A

（ 43 ） 高铟组分镓砷/铟镓砷量子阱结构及其制备方法, 2005, 第 3 作者, 专利号: CN1624996A

   

（1） 半导体InAs量子点单光子发射器件, Semiconductor InAs quantum dot single-photon emission devices, 物理, [[[2010]]], 
（2） 新奇半导体低维结构的自组织生长, Novel self-assembled low dimensional semiconductor structures, 物理, [[[2006]]], 
（3） 交错梳齿型静电驱动MEMS微镜的设计与制作, Design and Fabrication of Staggered Vertical Comb Electrostatically Driven MEMS Micromirrors, 云南师范大学学报:自然科学版, 2022, 第 3 作者
（4） 量子点单光子源的光纤耦合, Optical fiber coupling of quantum dot single photon sources, 物理学报, 2021, 第 6 作者
（5） Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction, NANOMATERIALS, 2021, 通讯作者
（6） Self-Induced Dark States in Two-Dimensional Excitons, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2021, 第 7 作者
（7） 铝液滴刻蚀中纳米孔不对称性的研究, Optical and Quantum Electronics, 2021, 第 1 作者
（8） InAs量子点产生的光纤耦合高计数率单光子, Journal of Semiconductors, 2021, 第 1 作者
（9） Plasmon-Field-Induced Metastable States in the Wetting Layer: Detected by the Fluorescence Decay Time of InAs/GaAs Single Quantum Dots, ACS PHOTONICS, 2020, 第 5 作者
（10） Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots, APPLIED PHYSICS LETTERS, 2020, 第 7 作者
（11） Low-threshold topological nanolasers based on the second-order corner state, Low-threshold topological nanolasers based on the second-order corner state, 光:科学与应用(英文版), 2020, 第 7 作者
（12） Low-threshold topological nanolasers based on the second-order corner state, LIGHT-SCIENCE & APPLICATIONS, 2020, 第 7 作者
（13） Cavity Quantum Electrodynamics with Second-Order Topological Corner State, LASER & PHOTONICS REVIEWS, 2020, 第 9 作者
（14） C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence, AIP ADVANCES, 2020, 第 3 作者
（15） Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2020, 第 8 作者
（16） Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode, NANOSCALE RESEARCH LETTERS, 2020, 通讯作者
（17） 利用分子束外延在GaAs基上生长高特征温度的InAs量子点激光器, Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers, 红外与毫米波学报, 2020, 第 8 作者
（18） High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars, High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars, 中国物理B:英文版, 2019, 第 10 作者
（19） Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-mu m quantum dot lasers, CHINESE PHYSICS B, 2019, 通讯作者
（20） Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy, Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy, 中国物理B:英文版, 2019, 通讯作者
（21） 2.1 mu m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers, SUPERLATTICES AND MICROSTRUCTURES, 2019, 第 10 作者
（22） Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot lasers, Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot lasers, 中国物理B:英文版, 2019, 第 4 作者
（23） Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers, 14TH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS (LTO 2019), 2019, 第 10 作者
（24） 蝶形天线增强的InP基室温HEMT太赫兹探测器研究, Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature, 红外与激光工程, 2019, 第 6 作者
（25） 1.55μm通信波段InAs/GaAs量子点制备方法研究, Preparation Method of InAs/GaAs Quantum Dots for 1.55μm Communication Band, 通信技术, 2019, 第 3 作者
（26） 2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers, Superlattices and Microstructures, 2019, 第 10 作者
（27） 1.3um InAs/InGaAs QD Laser Steady Output Power Over 1.07 W, THIRD INTERNATIONAL CONFERENCE ON PHOTONICS AND OPTICAL ENGINEERING, 2019, 第 6 作者
（28） 1.2-um InAs/GaAs high-density quantum dot laser, 14TH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS (LTO 2019), 2019, 第 4 作者
（29） High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars, CHINESE PHYSICS B, 2019, 第 10 作者
（30） The Study on Fabrication and Characterization of Al0.2In0.8Sb/InAs0.4Sb0.6 Heterostructures by Molecular Beam Epitaxy, IEEE ACCESS, 2019, 第 4 作者
（31） 第四代半导体拂化物低维结构外延晶圆材料与激光器技术, 科技纵览, 2019, 第 4 作者
（32） Wavelength tuning of type-II "W" quantum well of interband cascade laser, THIRD INTERNATIONAL CONFERENCE ON PHOTONICS AND OPTICAL ENGINEERING, 2019, 第 10 作者
（33） Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot lasers, Chinese Physics. B, 2019, 第 2 作者
（34） Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-mu m Quantum Dot Lasers, NANOSCALE RESEARCH LETTERS, 2018, 第 9 作者
（35） 1.3-μm InAs/GaAs quantum dots grown on Si substrates, 1.3-μm InAs/GaAs quantum dots grown on Si substrates, 中国物理B:英文版, 2018, 第 10 作者
（36） HEMT terahertz detector enhanced by bow-tie antenna at room temperature, INFRARED, MILLIMETER-WAVE, AND TERAHERTZ TECHNOLOGIES V, 2018, 通讯作者
（37） InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触, Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer, 红外与毫米波学报, 2018, 第 3 作者
（38） Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector, Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector, 中国物理B：英文版, 2018, 第 7 作者
（39） Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot, CHINESE PHYSICS B, 2018, 第 5 作者
（40） 2μm GaSb基大功率半导体激光器研究进展, Research progress of 2 μm GaSb-based high power semiconductor laser, 红外与激光工程, 2018, 第 10 作者
（41） Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector, CHINESE PHYSICS B, 2018, 通讯作者
（42） Performance Improvement of 2.0 mu m GaSb Laser Diode by Facet Coating, CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2018, 第 6 作者
（43） Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot, Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot, 中国物理B：英文版, 2018, 第 5 作者
（44） Room-temperature continuous-wave interband cascade laser emitting at 3.45 mu m, CHINESE PHYSICS B, 2018, 第 10 作者
（45） 半导体自组织量子点量子发光机理与器件, Physics and devices of quanutm light emission from semicoductor self-assembled quantum Dots, 物理学报, 2018, 第 6 作者
（46） 镀膜对2.0μm锑化物激光器性能的提升, Performance Improvement of 2.0μm GaSb Laser Diode by Facet Coating, 中国激光, 2018, 第 6 作者
（47） 3～4μm锑化物带间级联激光器研究进展（特邀）, Research progress of 3-4μm antimonide interband cascade laser(invited), 红外与激光工程, 2018, 第 10 作者
（48） Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors, Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors, 中国物理B：英文版, 2018, 第 3 作者
（49） Single Self-Assembled InAs/GaAs Quantum Dots in Photonic Nanostructures: The Role of Nanofabrication, PHYSICAL REVIEW APPLIED, 2018, 其他（合作组作者）
（50） Research of Terahertz Detector Based on Resonant Tunneling Diode Enhanced by Bowtie Antenna, CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2018, 通讯作者
（51） 蝶形天线增强的共振隧穿二极管太赫兹探测器研究, Research of Terahertz Detector Based on Resonant Tunneling Diode Enhanced by Bowtie Antenna, 中国激光, 2018, 第 4 作者
（52） Room-temperature continuous-wave interband cascade laser emitting at 3.45μm, Room-temperature continuous-wave interband cascade laser emitting at 3.45μm, 中国物理B:英文版, 2018, 第 10 作者
（53） Physics and devices of quanutm light emission from semicoductor self-assembled quantum Dots, ACTA PHYSICA SINICA, 2018, 第 6 作者
（54） 1.3-mu m InAs/GaAs quantum dots grown on Si substrates, CHINESE PHYSICS B, 2018, 第 10 作者
（55） InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触, Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer, 红外与毫米波学报, 2018, 第 3 作者
（56） High-power GaSb-based microstripe broad-area lasers, APPLIED PHYSICS EXPRESS, 2018, 第 10 作者
（57） Room-temperature continuous-wave interband cascade laser emitting at 3.45μm, Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm, 中国物理B, 2018, 第 10 作者
（58） 1.3-μm InAs/GaAs quantum dots grown on Si substrates, 1.3-µm InAs/GaAs quantum dots grown on Si substrates, 中国物理B:英文版, 2018, 第 10 作者
（59） Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 第 4 作者
（60） A deterministic quantum dot micropillar single photon source with >65% extraction efciency based on fuorescence imaging method, nature，ScIEnTIfIc REPOrtS | 7: 13986 | DOI:10.1038/s41598-017-13433-w, 2017, 第 1 作者
（61） 2DEG characteristics of HEMT THz detector, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 通讯作者
（62） Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm, CHINESE PHYSICS B, 2017, 通讯作者
（63） Spectral dynamical behavior in two-section, quantum well, mode-locked laser at 1.064 mu m, CHINESE PHYSICS B, 2017, 通讯作者
（64） Spectral dynamical behavior in two-section, quantum well, mode-locked laser at 1.064 μm, Chinese Physics. B, 2017, 第 7 作者
（65） Measurement of the inhomogeneous broadening of a bi-exciton state in a quantum dot using Franson-type nonlocal interference, OPTICS EXPRESS, 2017, 第 5 作者
（66） 钨摻杂氧化钒基非制冷红外探测器性能研究, Study on properties of tungsten doped vanadium oxide uncooled infrared detector, 广西大学学报：自然科学版, 2017, 第 2 作者
（67） High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence, High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence, 中国物理快报：英文版, 2017, 第 7 作者
（68） Anisotropic in-plane spin dynamics in (110)-oriented GaAs/AlGaAs multiple quantum well, JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者
（69） 1.3微米单光子发射, Appl. Phys. Lett., 2017, 第 1 作者
（70） Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diode, CHINESE PHYSICS LETTERS, 2017, 通讯作者
（71） Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar, Nanoscale Research Letters, 2017, 第 4 作者
（72） 1.3 mu m single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120K, APPLIED PHYSICS LETTERS, 2017, 第 3 作者
（73） Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 第 4 作者
（74） Quantum efficiency optimization by maximizing wave function overlap in type-II superlattice photodetectors, NANOSCALE, 2017, 第 6 作者
（75） High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 mu m with Very Small Lateral Beam Divergence, CHINESE PHYSICS LETTERS, 2017, 第 7 作者
（76） Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission, NATIONAL SCIENCE REVIEW, 2017, 第 6 作者
（77） High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence, High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence, 中国物理快报：英文版, 2017, 第 7 作者
（78） Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm_, CHINESE PHYSICS B, 2017, 第 3 作者
（79） HEMT太赫兹探测器的二维电子气特性分析, 2DEG characteristics of HEMT THz detector, 红外与毫米波学报, 2017, 第 5 作者
（80） Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diode, Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diode, 中国物理快报：英文版, 2017, 第 6 作者
（81） Single photon extraction from self-assembled quantum dots via stable fiber array coupling, APPLIED PHYSICS LETTERS, 2017, 第 5 作者
（82） 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K, Appl. Phys. Lett., 2017, 第 3 作者
（83） Bright Single-Photon Source at 1.3 mu m Based on InAs Bilayer Quantum Dot in Micropillar, NANOSCALE RESEARCH LETTERS, 2017, 第 4 作者
（84） 锑化物纳米结构的中红外激光器与探测器的新进展, Recent Advances of Mid-Infrared Lasers and Detectors in Antimonide-Based Nanostructures, 中国基础科学, 2017, 第 5 作者
（85） Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress, AIP ADVANCES, 2016, 第 7 作者
（86） High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 mu m, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 第 8 作者
（87） Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots, CHINESE PHYSICS B, 2016, 第 10 作者
（88） Low lateral divergence 2 mu m InGaSb/AlGaAsSb broad-area quantum well lasers, OPTICS EXPRESS, 2016, 第 10 作者
（89） 大功率高效率2μm锑化镓基量子阱激光器, High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2μm, 红外与毫米波学报, 2016, 第 8 作者
（90） 2-mu m single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography, CHINESE PHYSICS B, 2016, 第 8 作者
（91） 共振隧穿二极管近红外探测器的电流抑制方法研究, Current Suppression of Resonant Tunneling Diode Photodetector Working at Near-Infrared Wavelengths, 激光与光电子学进展, 2016, 第 3 作者
（92） 2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography, Chinese Physics B, 2016, 第 8 作者
（93） Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells, Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells, 中国物理快报：英文版, 2016, 第 3 作者
（94） InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate, JOURNAL OF CRYSTAL GROWTH, 2016, 第 9 作者
（95） Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells, CHINESE PHYSICS LETTERS, 2016, 第 3 作者
（96） Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers, Optics Express, 2016, 第 10 作者
（97） Short-wave infrared detector with double barrier structure and low dark current density, CHINESE OPTICS LETTERS, 2016, 通讯作者
（98） Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band, SCIENTIFIC REPORTS, 2016, 第11作者
（99） 倍增型共振隧穿弱光探测器的噪声性能研究, Noise performance of resonant tunneling diode photodetector with a multiplication region, 光电子·激光, 2015, 第 5 作者
（100） Au Microdisk-Size Dependence of Quantum Dot Emission from the Hybrid Metal-Distributed Bragg Reflector Structures Employed for Single Photon Sources, CHINESE PHYSICS LETTERS, 2015, 第 7 作者
（101） 低暗电流InGaAs-MSM光电探测器, InGaAs-MSM Photodetector with Low Dark Current, 光子学报, 2015, 第 2 作者
（102） Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires, CHINESE PHYSICS LETTERS, 2015, 第 4 作者
（103） Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs, J.applied physics, 2015, 第 6 作者
（104） 共振隧穿弱光探测器的分子束外延生长条件优化, Optimization of Molecular Beam Epitaxy Conditions of Resonant Tunneling Diode Photodetector, 中国激光, 2015, 第 3 作者
（105） Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy, NANOSCALE RESEARCH LETTERS, 2015, 第 7 作者
（106） Resonant tunneling diode photodetector with nonconstant responsivity, OPTICS COMMUNICATIONS, 2015, 第 3 作者
（107） 金纳米颗粒光散射提高InAs单量子点荧光提取效率, Extraction efficiency enhancement of single InAs quantum dot emission through light scattering on the Au nanoparticles, ACTA PHYSICA SINICA, 2015, 第 5 作者
（108） Resonant tunnelling diode photodetector operating at near-infrared wavelengths with high responsivity, ELECTRONICS LETTERS, 2015, 通讯作者
（109） Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory, NATURE COMMUNICATIONS, 2015, 第 15 作者
（110） Au Microdisk-Size Dependence of Quantum Dot Emission from the Hybrid Metal-Distributed Bragg Reflector Structures Employed for Single Photon Sources, Au Microdisk-Size Dependence of Quantum Dot Emission from the Hybrid Metal-Distributed Bragg Reflector Structures Employed for Single Photon Sources, 中国物理快报：英文版, 2015, 第 7 作者
（111） 金纳米颗粒光散射提高InAs单量子点荧光提取效率, Extraction efficiency enhancement of single InAs quantum dot emission through light scattering on the Au nanoparticles, ACTA PHYSICA SINICA, 2015, 第 5 作者
（112） Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure, PHYSICAL REVIEW B, 2015, 第 6 作者
（113） Second-Order Correlation Function for Asymmetric-to-Symmetric Transitions due to Spectrally Indistinguishable Biexciton Cascade Emission, Second-Order Correlation Function for Asymmetric-to-Symmetric Transitions due to Spectrally Indistinguishable Biexciton Cascade Emission, CHINESE PHYSICS LETTERS, 2015, 第 5 作者
（114） In situ probing and integration of single self-assembled quantum dots-in-nanowires for quantum photonics, NANOTECHNOLOGY, 2015, 第 3 作者
（115） Experimental detection of polarization-frequency quantum correlations in a photonic quantum channel by local operations, OPTICA, 2015, 第 10 作者
（116） Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure, CHINESE PHYSICS LETTERS, 2015, 第 5 作者
（117） Second-Order Correlation Function for Asymmetric-to-Symmetric Transitions due to Spectrally Indistinguishable Biexciton Cascade Emission, Second-Order Correlation Function for Asymmetric-to-Symmetric Transitions due to Spectrally Indistinguishable Biexciton Cascade Emission, 中国物理快报：英文版, 2015, 第 5 作者
（118） A quantum dot asymmetric self-gated nanowire FET for high sensitive detection, AIP ADVANCES, 2015, 第 6 作者
（119） Photoluminescence from plasmon-enhanced single InAs quantum dots, ACTA PHYSICA SINICA, 2014, 第 3 作者
（120） High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy, CHINESE PHYSICS B, 2014, 第 7 作者
（121） Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes, CHINESE PHYSICS B, 2014, 通讯作者
（122） Photoluminescence from plasmon-enhanced single InAs quantum dots, ACTA PHYSICA SINICA, 2014, 第 3 作者
（123） High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy, Chinese Physics. B, 2014, 第 7 作者
（124） InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates, RUSSIAN PHYSICS JOURNAL, 2014, 第11作者
（125） Resonant tunneling diode with a multiplication region for light detection, OPTICS COMMUNICATIONS, 2014, 第 3 作者
（126） Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes, Chinese Physics. B, 2014, 第 2 作者
（127） Self-assembly of single "square" quantum rings in gold-free GaAs nanowires, NANOSCALE, 2014, 第 10 作者
（128） Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector, CHINESE PHYSICS B, 2014, 第 4 作者
（129） 980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth, Proceedings of spie - the international society for optical engineering, 2013, 第 7 作者
（130） Properties of delta doped GaAs/A1(chi)Ga(1-chi) As 2DEG with embedded InAs quantum dots, ACTA PHYSICA SINICA, 2013, 第 5 作者
（131） Single InAs quantum dot coupled to different "environments" in one wafer for quantum, Applied Physics Letters, 2013, 第 8 作者
（132） In situ tuning the single photon emission from single quantum dots through hydrostatic pressure, APPLIED PHYSICS LETTERS, 2013, 第 5 作者
（133） Strain-driven synthesis of self-catalyzed branched GaAs nanowires, APPLIED PHYSICS LETTERS, 2013, 第 7 作者
（134） Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates, RUSSIAN PHYSICS JOURNAL, 2013, 第 10 作者
（135） Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics, APPLIED PHYSICS LETTERS, 2013, 第 8 作者
（136） 内嵌InAs量子点的δ掺杂GaAs/Al_x Ga_（1-x） As二维电子气特性分析, Properties ofδdoped GaAs/Al_x Ga_(1-x) As 2DEG with embedded InAs quantum dots, 物理学报, 2013, 第 5 作者
（137） 新型量子点场效应增强型单光子探测器, Quantum-dot gated field effect enhanced single-photon detectors, ACTA PHYSICA SINICA, 2013, 第 3 作者
（138） Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 第 4 作者
（139） In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots, NANOSCALE RESEARCH LETTERS, 2013, 第 7 作者
（140） Electron spin dynamics study of bulk p-GaAs: The screening effect, APPLIED PHYSICS LETTERS, 2013, 第 3 作者
（141） 半导体锁模激光器的最新研究进展, Recent Progress of Semiconductor Mode-Locked Lasers, 激光与光电子学进展, 2013, 第 6 作者
（142） Small linewidth and short lifetime of emission from GaAs/AlAs core/shell quantum dots on the facet of GaAs nanowire, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 第 7 作者
（143） High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators, CHINESE PHYSICS LETTERS, 2013, 第 3 作者
（144） 新型量子点场效应增强型单光子探测器, Quantum-dot gated field effect enhanced single-photon detectors, ACTA PHYSICA SINICA, 2013, 第 3 作者
（145） An effective reflectance method for designing broadband antireflection films coupled with solar cells, An effective reflectance method for designing broadband antireflection films coupled with solar cells, CHINESE PHYSICS B, 2012, 第 5 作者
（146） The Resonant Fluorescence of a Single InAs Quantum Dot in a Cavity, CHINESE PHYSICS LETTERS, 2012, 第 5 作者
（147） High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs, ACTA PHYSICA SINICA, 2012, 第 4 作者
（148） Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 第 7 作者
（149） 高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器, High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs, 物理学报, 2012, 第 4 作者
（150） Multilayer Antireflection Coating for Triple Junction Solar Cells (vol 28, 047802, 2011), CHINESE PHYSICS LETTERS, 2012, 第 6 作者
（151） Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy, NANOTECHNOLOGY, 2012, 第 6 作者
（152） InAs单量子点中级联辐射光子的关联测量, Correlation measurement of quantum cascade photons in single InAs quantum dot, 物理学报, 2011, 第 4 作者
（153） Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots, CHINESE PHYSICS LETTERS, 2011, 第 7 作者
（154） Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 第 5 作者
（155） Correlation measurement of quantum cascade photons in single InAs quantum dot, ACTA PHYSICA SINICA, 2011, 第 4 作者
（156） Multilayer antireflection coating for triple junction solar cells, CHINESE PHYSICS LETTERS, 2011, 第 6 作者
（157） Metal electrode influence on the wet selective etching of gaas/algaas, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 第 5 作者
（158） Gaas-based long-wavelength inas quantum dots on multi-step-graded ingaas metamorphic buffer grown by molecular beam epitaxy, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 8 作者
（159） Preparation and photoluminescence study of patterned substrate quantum wires, ACTA PHYSICA SINICA, 2011, 第 8 作者
（160） Single-photon interference based on a single inas quantum dot, ACTA PHYSICA SINICA, 2011, 第 4 作者
（161） High-performance metamorphic ingaas resonant cavity enhanced photodetector grown on gaas substrate, APPLIED PHYSICS LETTERS, 2011, 
（162） Influence of window layer thickness on double layer antireflection coating for triple junction solar cells, Influence of window layer thickness on double layer antireflection coating for triple junction solar cells, JOURNAL OF SEMICONDUCTORS, 2011, 第 2 作者
（163） Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy, OPTOELECTRONICS LETTERS, 2011, 第 2 作者
（164） Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy, Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy, 光电子快报：英文版, 2011, 第 2 作者
（165） Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy, Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy, 半导体学报, 2011, 第 6 作者
（166） Preparation and photoluminescence study of patterned substrate quantum wires, ACTA PHYSICA SINICA, 2011, 第 8 作者
（167） Molecular beam epitaxy growth of gaas on an offcut ge substrate, CHINESE PHYSICS B, 2011, 第 4 作者
（168） 基于InAs单量子点的单光子干涉, Single-photon interference based on a single InAs quantum dot, 物理学报, 2011, 第 4 作者
（169） Influence of window layer thickness on double layer antireflection coating for triple junction solar cells, Influence of window layer thickness on double layer antireflection coating for triple junction solar cells, 半导体学报, 2011, 第 7 作者
（170） GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy, GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy, 半导体学报, 2011, 第 4 作者
（171） Tuning photoluminescence of single InAs quantum dot by electric field, ACTA PHYSICA SINICA, 2010, 第 5 作者
（172） 电场调谐InAs单量子点的发光光谱, Tuning photoluminescence of single InAs quantum dot by electric field, 物理学报, 2010, 第 5 作者
（173） Metamorphic ingaas p-i-n photodetectors with 1.75 mu m cut-off wavelength grown on gaas, CHINESE PHYSICS LETTERS, 2010, 第 4 作者
（174） Direct observation of excitonic polaron in inas/gaas quantum dots, EPL, 2010, 第 10 作者
（175） Optically controlled quantum dot gated transistors with high on/off ratio, APPLIED PHYSICS LETTERS, 2010, 第 4 作者
（176） Electrically Driven InAs Quantum-Dot Single-Photon Sources, CHINESE PHYSICS LETTERS, 2009, 第 6 作者
（177） GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy, GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy, 中国物理快报：英文版, 2009, 第 5 作者
（178） 可用于弱光探测器的量子线研究进展, Research Progresses of Quantum Wires for Weak Light Detection, 半导体光电, 2009, 第 5 作者
（179） Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings, APPLIED PHYSICS LETTERS, 2009, 第 4 作者
（180） Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots, Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots, CHINESE PHYSICS LETTERS, 2009, 第 4 作者
（181） Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells, Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells, 中国物理快报：英文版, 2009, 第 5 作者
（182） Spin Relaxation of Electrons in Single InAs Quantum Dots, Spin Relaxation of Electrons in Single InAs Quantum Dots, CHINESE PHYSICS LETTERS, 2009, 第 7 作者
（183） Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy, Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy, 中国物理快报：英文版, 2009, 第 4 作者
（184） GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy, GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy, CHINESE PHYSICS LETTERS, 2009, 第 5 作者
（185） Size dependence of biexciton binding energy in single InAs/GaAs quantum dots, CHINESE PHYSICS B, 2009, 第 4 作者
（186） Size dependence of biexciton binding energy in single InAs/GaAs quantum dots, Size dependence of biexciton binding energy in single InAs/GaAs quantum dots, 中国物理：英文版, 2009, 第 4 作者
（187） Spin Relaxation of Electrons in Single InAs Quantum Dots, Spin Relaxation of Electrons in Single InAs Quantum Dots, 中国物理快报：英文版, 2009, 第 7 作者
（188） Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot, Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot, 中国物理快报：英文版, 2008, 第 6 作者
（189） Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots, Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots, 中国物理快报：英文版, 2008, 第 5 作者
（190） High-density and narrow size-distribution inas quantum dots formed by a modified two-step growth, CHINESE PHYSICS B, 2008, 第 4 作者
（191） 单光子源低密度长波长InAs／GaAs量子点的制备, Fabrication of low density and long - wavelength InAs/GaAs quantum dots for single photon sources, 功能材料与器件学报, 2008, 第 4 作者
（192） Tuning Photoluminescence Energy and Fine Structure Splitting in Single Quantum Dots by Uniaxial Stress, Tuning Photoluminescence Energy and Fine Structure Splitting in Single Quantum Dots by Uniaxial Stress, 中国物理快报：英文版, 2008, 第 7 作者
（193） Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress, CHINESE PHYSICS LETTERS, 2008, 第 7 作者
（194） Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot, CHINESE PHYSICS LETTERS, 2008, 第 6 作者
（195） Spectroscopy of long wavelength coupled quantum dots, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 第 3 作者
（196） 异变生长GaAs基长波长InAs垂直耦合量子点, 半导体技术, 2008, 第 4 作者
（197） High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth, High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth, 中国物理：英文版, 2008, 第 4 作者
（198） Single-photon emission from a single InAs quantum dot, CHINESE PHYSICS LETTERS, 2008, 第 4 作者
（199） Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots, Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots, CHINESE PHYSICS LETTERS, 2008, 第 5 作者
（200） Single-Photon Emission from a Single InAs Quantum Dot, Single-Photon Emission from a Single InAs Quantum Dot, 中国物理快报：英文版, 2008, 第 4 作者
（201） Spin relaxation dynamics in InAs monolayer and submonolayer, ACTA PHYSICA SINICA, 2007, 第 6 作者
（202） Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy, CHINESE PHYSICS LETTERS, 2007, 第 3 作者
（203） Extremely Low Density InAs Quantum Dots with No Wetting Layer, Extremely Low Density InAs Quantum Dots with No Wetting Layer, CHINESE PHYSICS LETTERS, 2007, 第 3 作者
（204） Fabrication of ultra-low density and long-wavelength emission inas quantum dots, JOURNAL OF CRYSTAL GROWTH, 2007, 第 3 作者
（205） Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers, Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers, CHINESE PHYSICS LETTERS, 2007, 第 5 作者
（206） 室温连续激射1.59μm GaInNAsSb量子阱激光器, Room Temperature Continuous Wave Operation 1.59μm GaInNAsSb Quantum Well Lasers, 半导体学报, 2007, 第 3 作者
（207） Mbe growth of very short period inas/gasb type-ii superlattices on (001) gaas substrates, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 第 5 作者
（208） Growth of gasb layers on gaas (001) substrate by molecular beam epitaxy, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 第 5 作者
（209） Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers, Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers, 中国物理快报：英文版, 2007, 第 5 作者
（210） Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy, Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy, 中国物理快报：英文版, 2007, 第 3 作者
（211） InAs单层和亚单层结构中的自旋动力学研究, Spin relaxation dynamics in InAs monolayer and submonolayer, 物理学报, 2007, 第 6 作者
（212） 1．55μm低温生长GaAs谐振腔增强型探测器, 1.55 μm Low-temperature-grown GaAs Resonant Cavity Enhanced Photodetector, 光子学报, 2006, 第 7 作者
（213） 1．3μm自组织InGaAs／InAs／GaAs量子点激光器分子束外延生长, 1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy, 半导体学报, 2006, 第 2 作者
（214） Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy, Chinese Physics Letters, 2006, 第 4 作者
（215） 1．3μm自组织InGaAs／InAs／GaAs量子点激光器分子束外延生长, 1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy, 半导体学报, 2006, 第 2 作者
（216） Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells, CHINESE PHYSICS LETTERS, 2006, 第 6 作者
（217） Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells, CHINESE PHYSICS LETTERS, 2006, 第 3 作者
（218） Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells, Chinese Physics Letters, 2006, 第 3 作者
（219） Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing, CHINESE PHYSICS LETTERS, 2006, 第 3 作者
（220） Complex quantum ring structures formed by droplet epitaxy, APPLIED PHYSICS LETTERS, 2006, 第 4 作者
（221） 1064nm RCE探测器光电响应特性分析, Performance of 1064nm RCE Photodetectors, 半导体学报, 2005, 第 6 作者
（222） 1．3μm GaAs基GaInNAs量子阱生长与激光器研制, Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes, 半导体学报, 2005, 第 3 作者
（223） 分子束外延生长的（GaAs1-xSbx／InyGa1-yAs）／GaAs量子阱光致发光谱研究, 物理学报, 2005, 第 3 作者
（224） 1．3μm GaAs基GaInNAs量子阱生长与激光器研制, Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes, 半导体学报, 2005, 其他（合作组作者）
（225） 室温连续激射1.3μm InAs/GaAs量子点激光器, 2005, 第 4 作者
（226） N，Sb和单分子层数对GaAs/GaInNAsSb超晶格性能的影响, 物理学报, 2004, 第 1 作者
（227） GaAs／GaInNAsSb超晶格性能的影响, 物理学报, 2004, 第 1 作者
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（ 1 ） 锑化物纳米结构中红外激光与探测器, 负责人, 国家任务, 2013-01--2017-12
（ 2 ） 基于半导体单量子点谐振腔耦合结构的超低功耗纳米发光管, 负责人, 国家任务, 2013-01--2016-12
（ 3 ） 基于Sb化物窄带量子阱的3微米波段中红外高功率激光器研究, 负责人, 国家任务, 2015-01--2019-12
（ 4 ） 电泵浦量子点单光子源与微腔激光研究, 负责人, 国家任务, 2021-07--2025-12