基本信息
徐应强  男  博导  中国科学院半导体研究所
电子邮件: yingqxu@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向


专利与奖励

   
专利成果
[1] 郝宏玥, 徐应强, 牛智川, 王国伟, 蒋洞微. 焦平面红外探测器芯片、探测器和制备方法. CN: CN113130676A, 2021-07-16.
[2] 陈伟强, 牛智川, 蒋洞微, 崔素宁, 李勇, 蒋俊锴, 王国伟, 徐应强. 利用钝化层负电化抑制侧壁漏电流的探测器的制备方法. CN: CN113113511A, 2021-07-13.
[3] 张一, 牛智川, 张宇, 徐应强, 杨成奥, 谢圣文, 邵福会, 尚金铭. 一种中红外锑化物量子级联激光器及其制备方法. CN: CN111431033B, 2021-04-09.
[4] 张一, 牛智川, 张宇, 徐应强, 杨成奥, 谢圣文, 邵福会, 尚金铭. 一种中红外波长全覆盖可调谐光模块. CN: CN111244757B, 2021-03-05.
[5] 杨成奥, 牛智川, 张宇, 徐应强, 谢圣文, 张一, 尚金铭, 黄书山, 袁野, 苏向斌, 邵福会. 单片集成双波长半导体激光器及其制备方法. CN: CN111276867B, 2021-01-29.
[6] 郭春妍, 魏思航, 蒋洞微, 王国伟, 徐应强, 汪韬, 牛智川. 红外探测器光陷阱结构的制备方法. CN: CN109802004B, 2021-01-15.
[7] 蒋志, 牛智川, 王国伟, 徐应强, 孙姚耀, 韩玺, 蒋洞微. 一种分子束外延生长长波红外超晶格界面的优化方法. CN: CN108648987B, 2020-10-09.
[8] 何小武, 牛智川, 张宇, 徐应强, 陈昊, 孙宝权, 窦秀明, 尚向军, 倪海桥, 任正伟, 刘汗青. 量子点单光子源、制备方法及其器件的制备方法. CN: CN111525005A, 2020-08-11.
[9] 谢圣文, 牛智川, 张宇, 徐应强, 邵福会, 杨成奥, 张一, 尚金铭, 黄书山, 袁野, 苏向斌. 基于数字合金势垒的量子阱结构、外延结构及其制备方法. CN: CN109217109B, 2020-05-26.
[10] 张一, 牛智川, 张宇, 徐应强, 杨成奥, 谢圣文, 邵福会, 尚金铭. 中红外超晶格带间跃迁激光器及其制备方法. CN: CN108988125B, 2020-04-21.
[11] 蒋志, 牛智川, 徐应强, 王国伟, 蒋洞微, 孙姚耀, 郭春妍, 贾庆轩, 常发冉. 基于锑化物的可见光-中红外探测器及其制备方法. CN: CN108899379B, 2019-10-25.
[12] 杨成奥, 牛智川, 张宇, 徐应强, 谢圣文, 张一, 尚金铭. 片上集成半导体激光器结构及其制备方法. CN: CN109586159A, 2019-04-05.
[13] 郭春妍, 孙姚耀, 蒋志, 郝宏玥, 吕粤希, 王国伟, 徐应强, 汪韬, 牛智川. 可见光拓展的中波红外探测器单元器件及其制备方法. CN: CN109524499A, 2019-03-26.
[14] 孙姚耀, 韩玺, 王国伟, 徐应强, 牛智川. 铟砷锑和铟镓砷锑双波段红外探测器及制备方法. 中国: CN106298993B, 2018-09-04.
[15] 韩玺, 徐应强, 王国伟, 向伟, 郝宏玥, 牛智川. 一种双通道宽光谱探测器及其制备方法. 中国: CN105957918B, 2017.11.03.
[16] 杨成奥, 张宇, 廖永平, 徐应强, 牛智川. 单模GaSb基半导体激光器及其制备方法. 中国: CN106953235A, 2017.07.14.
[17] 吕粤希, 孙姚耀, 郭春妍, 王国伟, 徐应强, 牛智川. 基于AlInAsSb体材料作倍增区的雪崩光电二极管及其制备方法. 中国: CN107170847A, 2017-09-15.
[18] 廖永平, 张宇, 魏思航, 郝宏玥, 徐应强, 牛智川. 一种大功率1.8‑4μm半导体激光器及其制备方法. 中国: CN106300015A, 2017-01-04.
[19] 郝宏玥, 徐应强, 王国伟, 向伟, 韩玺, 蒋洞微, 牛智川. InAs/GaSb超晶格光子晶体红外探测器及其制备方法. 中国: CN106024931A, 2016-10-12.
[20] 向伟, 王国伟, 徐应强, 郝宏玥, 韩玺, 任正伟, 贺振宏, 牛智川. 单势垒型InGaAsSb红外探测器. 中国: CN105932092A, 2016-09-07.
[21] 杨成奥, 张宇, 廖永平, 魏思航, 徐应强, 牛智川. 一种半导体激光器及其制备方法. 中国: CN105161976A, 2015-12-16.
[22] 杨成奥, 张宇, 廖永平, 徐应强, 牛智川. 一种集成半导体激光器的制备方法. 中国: CN105098595A, 2015-11-25.
[23] 张立春, 王国伟, 张宇, 徐应强, 倪海桥, 牛智川. 一种高电阻温度系数氧化钒薄膜的制备方法. 中国: CN104611670A, 2015-05-13.
[24] 向伟, 王国伟, 徐应强, 郝宏玥, 蒋洞微, 任正伟, 贺振宏, 牛智川. 一种雪崩光电二极管及其制作方法. 中国: CN104465853A, 2015-03-25.
[25] 郝宏玥, 王国伟, 向伟, 蒋洞微, 邢军亮, 徐应强, 牛智川. 一种半导体光电器件的表面钝化方法. 中国: CN104409525A, 2015-03-11.
[26] 蒋洞微, 向伟, 王娟, 邢军亮, 王国伟, 徐应强, 任正伟, 贺振宏, 牛智川. InAs/GaSb超晶格红外光电探测器及其制备方法. 中国: CN103887360A, 2014-06-25.
[27] 邢军亮, 张宇, 徐应强, 王国伟, 王娟, 向伟, 任正伟, 牛智川. 带间级联激光器及其制备方法. 中国: CN103579904A, 2014-02-12.
[28] 张宇, 邢军亮, 徐应强, 任正伟, 牛智川. 一种具有W型有源区结构的带间级联激光器. 中国: CN103545713A, 2014-01-29.
[29] 邢军亮, 张宇, 王国伟, 王娟, 王丽娟, 任正伟, 徐应强, 牛智川. 双波长锑化物应变量子阱半导体激光器及其制备方法. 中国: CN103078252A, 2013.05.01.
[30] 邢军亮, 张宇, 徐应强, 王国伟, 王娟, 向伟, 任正伟, 牛智川. InSb/GaSb量子点结构器件及生长方法. 中国: CN103441181A, 2013-12-11.
[31] 倪海桥, 丁颖, 徐应强, 李密锋, 喻颖, 査国伟, 徐建新, 牛智川. 基于半导体超短脉冲激光器的太赫兹源设备. 中国: CN103368042A, 2013-10-23.
[32] 贺继方, 尚向军, 倪海桥, 王海莉, 李密峰, 朱岩, 王莉娟, 喻颖, 贺正宏, 徐应强, 牛智川. 在衬底上生长异变缓冲层的方法. 中国: CN102194671A, 2011-09-21.
[33] 迂修, 张宇, 王国伟, 徐应强, 徐云, 宋国峰. “W”型锑化物二类量子阱的外延生长方法. 中国: CN102157903A, 2011-08-17.
[34] 汤宝, 周志强, 郝瑞亭, 任正伟, 徐应强, 牛智川. GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法. 中国: CN101576413B, 2010-12-01.
[35] 张宇, 王国伟, 汤宝, 任正伟, 徐应强, 牛智川, 陈良惠. HPT结构的InAs/GaSb超晶格红外光电探测器. 中国: CN101814545A, 2010-08-25.
[36] 王国伟, 汤宝, 周志强, 任正伟, 徐应强, 牛智川. 一种InAs/GaSb超晶格红外光电探测器及其制作方法. 中国: CN101777601A, 2010-07-14.
[37] 周志强, 郝瑞亭, 汤 宝, 任正伟, 徐应强, 牛智川. GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法. 中国: CN101562210, 2009-10-21.
[38] 郝瑞亭, 周志强, 任正伟, 徐应强, 牛智川. 一种在砷化镓衬底上外延生长锑化镓的方法. 中国: CN100495646, 2009-06-03.
[39] 郝瑞亭, 周志强, 任正伟, 徐应强, 牛智川. 一种在砷化镓衬底上外延生长锑化镓的方法. 中国: CN101148776, 2008-03-26.
[40] 牛智川, 倪海桥, 徐晓华, 徐应强, 张纬, 韩勤, 吴荣汉. 气态束源炉瞬态开关控制真空装置. 中国: CN1255572, 2006-05-10.
[41] 牛智川, 徐晓华, 倪海桥, 徐应强, 韩勤, 吴荣汉. 高铟组分镓砷/铟镓砷量子阱结构及其制备方法. 中国: CN1624996, 2005-06-08.

出版信息

   
发表论文
[1] Xu Yingqiang. Research on character of molecular beam epitaxial GaSb thermophotovoltaic (TPV) cells. 红外与激光工程. 2021, [2] Wei GuoShuai, Hao RuiTing, Guo Jie, Ma XiaoLe, Li XiaoMing, Li Yong, Chang FaRan, Zhuang Yu, Wang GuoWei, Xu YingQiang, Niu ZhiChuan, Wang Yao. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2021, 40(5): 595-604, http://dx.doi.org/10.11972/j.issn.1001-9014.2021.05.005.
[3] Ma, Xiaole, Guo, Jie, Hao, Ruiting, Wei, Guoshuai, Chang, Faran, Li, Yong, Li, Xiaoming, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices. OPTICAL MATERIALS EXPRESS[J]. 2021, 11(2): 585-591, https://www.webofscience.com/wos/woscc/full-record/WOS:000615987600015.
[4] 徐应强. 高倍增低暗电流AlInAsSb四元数字合金雪崩光电二极管. 红外与毫米波学报. 2021, [5] Jiang, JunKai, Li, Yong, Chang, FaRan, Cui, SuNing, Chen, WeiQiang, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan, Che, Renchao, Zhang, Chuanjie, Huang, Li. MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice. JOURNAL OF CRYSTAL GROWTH[J]. 2021, 564: http://dx.doi.org/10.1016/j.jcrysgro.2021.126109.
[6] Xu Yingqiang. GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-µm wavelength with digitally grown AlGaAsSb gradient layers. Chinese Physics B. 2021, [7] 张一, 杨成奥, 尚金铭, 陈益航, 王天放, 张宇, 徐应强, 刘冰, 牛智川. 半导体带间级联激光器研究进展. 光学学报. 2021, 41(1): 211-227, http://lib.cqvip.com/Qikan/Article/Detail?id=7104409807.
[8] Zheng DaNong, Su XiangBin, Xu YingQiang, Niu ZhiChuan. High gain and low dark current AlInAsSb avalanche photodiodes grown by quaternary digital alloys. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2021, 40(2): 172-177, http://dx.doi.org/10.11972/j.issn.1001-9014.2021.02.006.
[9] 郑大农, 苏向斌, 徐应强, 牛智川. 分子束外延生长的GaSb热光伏电池器件特性研究. 红外与激光工程. 2021, 50(3): 299-306, http://lib.cqvip.com/Qikan/Article/Detail?id=7104356071.
[10] 马润泽, 张晓明, 冯帅, 郑军, 徐应强, 李传波. 红外光电探测技术研究现状及展望(特邀). 光子学报. 2021, 50(10): 251-266, [11] 常发冉, 蒋志, 王国伟, 李勇, 崔素宁, 蒋洞微, 徐应强, 牛智川. 锑化物超晶格长波红外焦平面探测器研究进展. 中国科学:物理学、力学、天文学. 2021, 51(2): 28-45, http://lib.cqvip.com/Qikan/Article/Detail?id=7104245272.
[12] Zhang, Yi, Yang, ChengAo, Shang, JinMing, Chen, YiHang, Wang, TianFang, Zhang, Yu, Xu, YingQiang, Liu, Bing, Niu, ZhiChuan. GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-mu m wavelength with digitally grown AlGaAsSb gradient layers*. CHINESE PHYSICS B[J]. 2021, 30(9): [13] Wang, Tianfang, Yang, Chengao, Zhang, Yi, Chen, Yihang, Shang, Jinming, Zhang, Yu, Xu, Yingqiang, Niu, Zhichuan. High spectral purity GaSb-based blazed grating external cavity laser with tunable single-mode operation around 1940nm. OPTICS EXPRESS[J]. 2021, 29(21): 33864-33873, [14] Li, Nong, Chen, Weiqiang, Zheng, Danong, Sun, Ju, Jia, Qingxuan, Jiang, Junkai, Wang, Guowei, Jiang, Dongwei, Xu, Yingqiang, Niu, Zhichuan. The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection. INFRARED PHYSICS & TECHNOLOGY[J]. 2020, 111: http://dx.doi.org/10.1016/j.infrared.2020.103461.
[15] Zhang, Xuan, Jia, QingXuan, Sun, Ju, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. High-performance midwavelength infrared detectors based on InAsSb nBn design. CHINESE PHYSICS B[J]. 2020, 29(6): 549-552, http://lib.cqvip.com/Qikan/Article/Detail?id=7102153237.
[16] 袁野, 柴小力, 杨成奥, 张一, 尚金铭, 谢圣文, 李森森, 张宇, 徐应强, 宿星亮, 牛智川. 2.75μm中红外GaSb基五元化合物势垒量子阱激光器. 中国激光[J]. 2020, 47(7): 295-299, http://lib.cqvip.com/Qikan/Article/Detail?id=7102611276.
[17] Xu Yingqiang. MBE growth of high quality AlInSb/GaSb compound bufer. Optical and Quantum Electronics. 2020, [18] Cui, SuNing, Jiang, DongWei, Sun, Ju, Jia, QingXuan, Li, Nong, Zhang, Xuan, Li, Yong, Chang, FaRan, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. Investigation of active-region doping on InAs/GaSb long wave infrared detectors. CHINESE PHYSICS B[J]. 2020, 29(4): 516-522, http://lib.cqvip.com/Qikan/Article/Detail?id=7101531622.
[19] 齐通通, 郭杰, 王国伟, 郝瑞亭, 徐应强, 常发然. Sb浸润界面对InAs/InAsSb超晶格晶体结构和探测器性能的影响. 材料导报. 2020, 34(S01): 86-89, http://lib.cqvip.com/Qikan/Article/Detail?id=7102066319.
[20] 蒋洞微, 徐应强, 王国伟, 牛智川. 基于锑化物二类超晶格的多色红外探测器研究进展. 人工晶体学报. 2020, 49(12): 2211-2220, http://lib.cqvip.com/Qikan/Article/Detail?id=7103807709.
[21] Xu Yingqiang. MBE Growth of High Quality InSb Thin Films on GaAs Substrates with AlInSb/GaSb as Compound Buffer Layers. Chinese Physics B. 2020, [22] Yuan Ye, Su XiangBin, Yang Chengao, Zhang Yi, Shang JinMing, Xie ShengWen, Zhang Yu, Ni HaiQiao, Xu YingQiang, Nil ZhiChuan. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2020, 39(6): 667-670, https://www.webofscience.com/wos/woscc/full-record/WOS:000603449000001.
[23] 袁野, 苏向斌, 杨成奥, 张一, 尚金铭, 谢圣文, 张宇, 倪海桥, 徐应强, 牛智川. 利用分子束外延在GaAs基上生长高特征温度的InAs量子点激光器. 红外与毫米波学报[J]. 2020, 39(6): 667-670, http://lib.cqvip.com/Qikan/Article/Detail?id=7103711717.
[24] 杨成奥, 张一, 尚金铭, 陈益航, 王天放, 佟海保, 任正伟, 张宇, 徐应强, 牛智川. 2~4μm中红外锑化物半导体激光器研究进展(特邀). 红外与激光工程. 2020, 49(12): 155-163, http://lib.cqvip.com/Qikan/Article/Detail?id=7103953811.
[25] Li, Yong, Li, Xiaoming, Hao, Ruiting, Guo, Jie, Wang, Yunpeng, Aierken, Abuduwayiti, Zhuang, Yu, Chang, Faran, Gu, Kang, Wei, Guoshuai, Ma, Xiaole, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates. OPTICAL AND QUANTUM ELECTRONICS[J]. 2020, 52(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000517159800002.
[26] Xie Shengwen, Zhang Yu, Yang Chengao, Huang Shushan, Yuan Ye, Zhang Yi, Shang Jinming, Shao Fuhui, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars. 中国物理B:英文版[J]. 2019, 411-414, http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574849485255.
[27] Xie Shengwen, Niu Zhichuan, Yang ChengAo, Zhang Yi, Shang JinMing, Shao FuHui, Zhang Yu, Xu Yingqiang, Zhu J, Chen W, Zhang Z, Zhong M, Wang P, Qiu J. Micro-stripe broad-area Infrared diode lasers without deterioration of output power. 14TH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS (LTO 2019)null. 2019, 11170: [28] Xie, Shengwen, Yang, Chengao, Huang, ShuShan, Yuan, Ye, Zhang, Yi, Shang, Jinming, Cai, Chenyuan, Zhang, Yu, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan. 2.1 mu m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers. SUPERLATTICES AND MICROSTRUCTURES[J]. 2019, 130: 339-345, https://www.webofscience.com/wos/woscc/full-record/WOS:000474674000040.
[29] Chang Faran, Hao Ruiting, Qi Tongtong, Zhao Qichen, Liu Xinxing, Li Yong, Gu Kang, Guo Jie, Wang Guowei, Xu Yingqiang, Niu Zhichuan. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy. 中国物理B:英文版[J]. 2019, 449-453, http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574850485451.
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