1989-08--1992-07   中国科学院半导体研究所   研究生，硕士
1984-09--1989-07   中国科技大学   本科，学士

   

1992-08~现在, 中国科学院半导体研究所, 科研人员
1989-08~1992-07,中国科学院半导体研究所, 研究生，硕士
1984-09~1989-07,中国科技大学, 本科，学士

   

（ 1 ） 窄脊半导体器件的制备方法, 2019, 第 3 作者, 专利号: 2017 1 0054287.X

（ 2 ） 一种硅基GaAs单晶薄膜及其制备方法, 2019, 第 4 作者, 专利号: 2016 1 0173297.0

（ 3 ） 制备低密度、长波长InAs/GaAs量子点的方法, 2013, 第 3 作者, 专利号: 2013 1 0032256.6

（ 4 ） 用于半导体光放大器的宽增益谱量子点材料结构, 2012, 第 3 作者, 专利号: ZL 2009 1 0081987.3

（ 5 ） 一种测量光子晶体孔洞侧壁垂直度的方法, 2012, 第 2 作者, 专利号: ZL 2009 1 0081986.9

（ 6 ） 一种调节GaAs基二维光子晶体微腔共振模式的方法, 2012, 第 2 作者, 专利号: ZL 2009 1 0083495.8

（ 7 ） InP基长波长2-3μm准量子点激光器结构, 2012, 第 2 作者, 专利号: ZL 2010 1 0591575.7

   

（1） Controlling the helicity of light by electrical magnetization switching, NATURE, 2024, 第 11 作者
（2） Machine-learning-assisted and real-time-feedback-controlled growth of InAs/GaAs quantum dots, NATURE COMMUNICATIONS, 2024, 第 10 作者
（3） Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers, AIP ADVANCES, 2024, 第 5 作者
（4） Development of in situ characterization techniques in molecular beam epitaxy, JOURNAL OF SEMICONDUCTORS, 2024, 第 8 作者
（5） Universal Deoxidation of Semiconductor Substrates Assisted by Machine Learning and Real-Time Feedback Control, ACS APPLIED MATERIALS & INTERFACES, 2024, 第 5 作者
（6） High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters, Optical Materials Express, 2023, 第 5 作者
（7） Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers, Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers, 半导体学报:英文版, 2022, 第 6 作者  通讯作者
（8） In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching, NANOMATERIALS, 2021, 第 5 作者
（9） Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials, PROGRESS IN QUANTUM ELECTRONICS, 2021, 第 6 作者
（10） Boron-doped III–V semiconductors for Si-based optoelectronic devices, Boron-doped III���V semiconductors for Si-based optoelectronic devices, 半导体学报:英文版, 2020, 第 2 作者
（11） Spin Injection and Relaxation in p-Doped ( In , Ga ) As / Ga As Quantum-Dot Spin Light-Emitting Diodes at Zero Magnetic Field, PHYSICAL REVIEW APPLIED, 2020, 第 5 作者
（12） Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 第 2 作者
（13） 利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光, Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal, 红外与毫米波学报, 2019, 第 2 作者
（14） Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors, PHYSICAL REVIEW B, 2019, 第 10 作者
（15） Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells, Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells, CHINESE PHYSICS LETTERS, 2019, 第 8 作者
（16） Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 第 2 作者
（17） Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence, NANOSCALE, 2018, 第 8 作者
（18） Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field, NANO LETTERS, 2018, 第 6 作者
（19） InAs-based interband cascade lasers at 4.0μm operating at room temperature, InAs-based interband cascade lasers at 4.0 ��m operating at room temperature, 半导体学报(英文版), 2018, 第 4 作者
（20） Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers, JOURNAL OF CRYSTAL GROWTH, 2018, 第 7 作者
（21） InAs-based interband cascade lasers at 4.0 mu m operating at room temperature, JOURNAL OF SEMICONDUCTORS, 2018, 第 4 作者
（22） As压调制的InAlAs超晶格对InAs纳米结构光学特性的影响, Effects of As Pressure-Mmodulated InAlAs Superlattice on the Optical Properties of InAs Nanostructures Grown on InAs/InP, 西南大学学报（自然科学版）, 2017, 第 4 作者
（23） InP基InAs量子线异常的变温光致发光谱研究, Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire, 低温物理学报, 2017, 第 5 作者
（24） Angular Dependence of the Spin Photocurrent in a Co���Fe���B/MgO/n���i���p GaAs Quantum-Well Structure, PHYSICAL REVIEW APPLIED, 2017, 第 9 作者
（25） Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method, Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation���dissolution���regrowth method, CHINESE PHYSICS B, 2017, 第 3 作者  通讯作者
（26） Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation���dissolution���regrowth method, 中国物理B, 2017, 第 3 作者
（27） 四步法制备高质量硅基砷化镓薄膜, Four-step Method for Growing High-quality GaAs Films on Si Substrate by Molecular Beam Epitaxy, JOURNAL OF INORGANIC MATERIALS, 2016, 第 2 作者
（28） As压调制的InAlAs超晶格对InAs纳米结构形貌的影响, Effect of As pressure-modulated InAlAs superlattice on the morphology of InAs nanostructures grown on InAs/InAlAs/InP, ACTA PHYSICA SINICA, 2015, 第 7 作者
（29） As压调制的InAlAs超晶格对InAs纳米结构形貌的影响, Effect of As pressure-modulated InAlAs superlattice on the morphology of InAs nanostructures grown on InAs/InAlAs/InP, ACTA PHYSICA SINICA, 2015, 第 7 作者
（30） Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution-Regrowth Method, Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution-Regrowth Method, Chinese Physics Letters, 2013, 第 3 作者
（31） Cavity-mode calculation of L3 photonic crystal slab using the effective index perturbation method, OPTICAL REVIEW, 2013, 第 4 作者
（32） 有效折射率微扰法研究单缺陷光子晶体平板微腔的性质, Study on properties of the H1 photonic crystal slab cavity using the effective index perturbation method, 物理学报, 2012, 第 3 作者
（33） Metalorganic chemical vapor deposition growth of inas/gasb type ii superlattices with controllable asxsb1-xinterfaces, NANOSCALE RESEARCH LETTERS, 2012, 第 8 作者
（34） 应变补偿和生长停顿对InAs/InAlGaAs/InP纳米结构形貌的影响, Effect of strain compensation and growth interruption on the morphology of InAs nanostructures grown on InAs/InAIGaAs/InP, 中国科学：物理学、力学、天文学, 2012, 第 2 作者
（35） Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition, EPL, 2012, 第 8 作者
（36） Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface, ADVANCED MATERIALS RESEARCH, 2012, 第 3 作者
（37） Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities, MICROELECTRONIC ENGINEERING, 2012, 
（38） Study on properties of the H1 photonic crystal slab cavity using the effective index perturbation method, ACTA PHYSICA SINICA, 2012, 第 3 作者
（39） Investigation of the temperature sensitivity of the long-wavelength InP-based laser, ACTA PHYSICA SINICA, 2012, 第 2 作者
（40） Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs, Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs, Chinese Physics Letters, 2012, 第 8 作者
（41） InP基近红外波段量子线激光器的温度特性研究, Investigation of the temperature sensitivity of the long-wavelength InP-based laser, 物理学报, 2012, 第 2 作者
（42） Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method, ADVANCED MATERIALS RESEARCH, 2012, 第 3 作者
（43） 量子点红外探测器的研究进展, Research Progresses on Quantum Dot Infrared Photodetectors, 半导体光电, 2012, 第 2 作者
（44） Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation, JOURNAL OF SEMICONDUCTORS, 2012, 第 3 作者
（45） 量子点红外探测器的研究进展, 贾亚楠,徐波,王占国, 2012, 第 2 作者
（46） Optical identification of electronic state levels of an asymmetric inas/ingaas/gaas dot-in-well structure, NANOSCALE RESEARCH LETTERS, 2011, 第 3 作者
（47） Experimental and theoretical study for inas quantum dashes-in-a-step-well structure on (001)-oriented inp substrate, JOURNAL OF APPLIED PHYSICS, 2011, 
（48） Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation, JOURNAL OF CRYSTAL GROWTH, 2011, 第 4 作者
（49） Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation, JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, 2011, 
（50） The research progress of quantum dot lasers and photodetectors in china, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 第 4 作者
（51） Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots, JOURNAL OF APPLIED PHYSICS, 2011, 第 7 作者
（52） Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength, APPLIED PHYSICS LETTERS, 2011, 第 5 作者
（53） Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures, Anomalous temperature dependence of photoluminescence in inas/inalgaas/inp quantum wire and dot hybrid nanostructures, Chinese Physics Letters, 2011, 第 2 作者
（54） Abnormal temperature dependent photoluminescence of excited states of inas/gaas quantum dots: carrier exchange between excited states and ground states, JOURNAL OF APPLIED PHYSICS, 2011, 第 4 作者
（55） Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals, Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals, JOURNAL OF SEMICONDUCTORS, 2010, 第 3 作者
（56） Temperature dependent photoluminescence of an in(ga)as/gaas quantum dot system with different areal density, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 第 7 作者
（57） A Photovoltaic InAs Quantum-Dot Infrared Photodetector, A Photovoltaic InAs Quantum-Dot Infrared Photodetector, 中国物理快报：英文版, 2010, 第 2 作者
（58） Fabrication and luminescence characterization of two-dimensional gaas-based photonic crystal nanocavities, ACTA PHYSICA SINICA, 2010, 第 3 作者
（59） 二维GaAs 基光子晶体微腔的制作与光谱特性分析, Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities, 物理学报, 2010, 第 3 作者
（60） Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals, Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals, 半导体学报, 2010, 第 3 作者
（61） Interplay effects of temperature and injection power on photoluminescence of inas/gaas quantum dot with high and low areal density, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 第 5 作者
（62） Fabrication of high quality two-dimensional photonic crystal mask layer patterns, OPTICAL AND QUANTUM ELECTRONICS, 2009, 第 2 作者
（63） Influence of a tilted cavity on quantum-dot optoelectronic active devices, Influence of a tilted cavity on quantum-dot optoelectronic active devices, 半导体学报, 2009, 第 2 作者
（64） Morphology and wetting layer properties of InAs/GaAs nanostructures, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 第 3 作者
（65） In（Ga）As量子点红外探测器, In(Ga)As Quantum-Dot Infrared Photodetectors, 微纳电子技术, 2009, 第 2 作者
（66） 基于图形衬底的InAs/GaAs量子点和量子环液滴外延, Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate, 半导体学报, 2008, 第 4 作者
（67） 解理面预处理方法对二次外延的影响, Effect of Pretreatment of Cleaved Edges on Overgrowth, 半导体学报, 2008, 第 3 作者
（68） Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors, Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors, 中国物理快报：英文版, 2008, 第 2 作者
（69） Polarization dependence of absorption in strongly vertically coupled inas/gaas quantum dots for two-color far-infrared photodetector, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 第 3 作者
（70） Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors, Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors, Chinese Physics Letters, 2008, 第 2 作者
（71） Carrier channels of multimodal-sized quantum dots: a surface-mediated adatom migration picture, PHYSICAL REVIEW B, 2007, 第 4 作者
（72） Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers, MODERN PHYSICS LETTERS B, 2007, 第 6 作者
（73） Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates, Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates, Chinese Physics Letters, 2007, 第 2 作者
（74） Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates, Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates, 中国物理快报：英文版, 2007, 第 2 作者
（75） InP基近红外波段量子线激光器的电致发光谱, Electroluminescence Spectra of the Near-Infrared InP-Based Quantum-Wire Lasers, 半导体学报, 2007, 第 2 作者
（76） Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 第 6 作者
（77） 不同淀积厚度InAs量子点的喇曼散射, Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses, 半导体学报, 2006, 第 4 作者
（78） AlxGa1-xAs／GaAs分布布拉格反射镜的湿法氧化, Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors, 半导体学报, 2005, 第 3 作者
（79） MBE Growth of High Electron Mobility InP Epilayers, 半导体学报, 2005, 第 6 作者
（80） InAs/GaAs多层堆垛量子点激光器的激射特性, Lasing Characteristics of InAs/GaAs Quantum-Dot Lasers with Multistacked Dot Layer, 半导体学报, 2005, 第 4 作者
（81） Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors, 半导体学报, 2005, 第 3 作者
（82） 利用GaAs基上InGaAs应变层制备有序排列的InAs量子点, 半导体学报, 2004, 第 3 作者
（83） 应变自组装InAs／GaAs量子点材料与器件光学性质研究, Optical Characteristics of Strained Self-Organized InAs/GaAs Quantum Dot Materials and Laser Diodes, 半导体学报, 2003, 第 2 作者
（84） 具有InAlAs浸润层的InGaAs量子点的制备和特性研究, Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting lay er, 物理学报, 2003, 第 3 作者
（85） InP基上InAs纳米结构形貌的研究进展, Progress in InAs Nano-structure Morphology on InP Substrate, 金属材料研究, 2003, 第 2 作者
（86） 应变层InGaAsP量子阱激光器结构的调制光谱研究, Photoreflectance study of strained InGaAsP quantum-well laser structure, 微纳电子技术, 2003, 第 5 作者
（87） 应变自组装InAlAs量子点材料和红光量子点激光器, 固体电子学研究与进展, 2002, 第 1 作者
（88） 应变自组装InAlAs量子点材料和红光量子点激器, 固体电子学研究与进展, 2002, 第 1 作者
（89） 用于泵浦固体激光器的大功率半导体激光材料及器件实用化研究, 材料导报, 2001, 第 1 作者
（90） 快速热退火对带有 InGaAs盖层的 InAs/GaAs量子点发光特性的影响（英文）, 半导体学报, 2001, 第 4 作者
（91） 自组装InAs/GaAs量子点材料和量子点激光器, 中国科学. A辑，数学, 2000, 第 1 作者
（92） 大功率In（Ga）As／GaAs量子点激光器, 半导体学报, 2000, 第 3 作者
（93） 1.08μm InAs／GaAs量子点激光器光学特性研究, 功能材料与器件学报, 2000, 第 1 作者
（94） 量子点激光器及其应用研究, 高技术通讯, 2000, 第 7 作者
（95） 红光InAlAs量子点的结构和光学性质, 发光学报, 1999, 第 10 作者
（96） GaAs（311）A衬底上自组装InAs量子点的结构和光学特性, STRUCTURAL AND OPTICAL PROPERTIES OF SELF-ASSEMBLED InAs QUANTUM DOTS GROWN ON GaAs(311) A SUBSTRATE, 物理学报, 1999, 第 4 作者
（97） Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution, Red luminesecnce from self-assembled InAlAs/AlGaAs quantum dots with bimodal size distribution, Chinese Physics Letters, 1999, 第 2 作者
（98） HEMT结构材料中二维电子气的输运性质研究, 半导体学报, 1999, 第 3 作者
（99） InAs量子点的原子力显微镜测试结果分析, 半导体学报, 1999, 第 1 作者
（100） Observation of the third subband population in midulation-doped InGaAs/InAlAs heterostructure, 中国物理快报, 1998, 第 3 作者
（101） 808nm GaAs／AlGaAs大功率半导体激光器波长的影响因素及控制, 半导体学报, 1997, 第 8 作者
（102） 高温连续输出AlGaAs大功率单量子阱激光器的工作特性, 半导体学报, 1997, 第 5 作者
（103） MBE自组织生长多层竖直自对准InAs量子点结构的研究, 发光学报, 1997, 第 9 作者
（104） 高电子迁移率GaAs/AlxGa（1-x）As二维电子气（2DEG）异质结结构参数优化研究, 半导体学报, 1995, 第 8 作者
（105） EL2光淬灭过程中光电导增强现象原因新探, 半导体学报, 1994, 

   

（ 1 ） CMOS工艺兼容的硅基高性能单模量子点激光器, 参与, 国家任务, 2021-01--2025-12

（1）Epitaxially Grown 1.3-Micron Si-based InAs/GaAs Quantum-Dot Lasers   第二十届国际分子束外延学术会议   Tian Yu, Guan-qing Yang, Bo Xu, Ping Liang, Jin-song Xia, Ying Hu, Yong-hai Chen, Zhan-guo Wang   2018-09-02
（2）MBE生长法制备的Si基1.3微米InAs/GaAs量子点激光器   第十二届全国分子束外延学术会议   杨冠卿，徐波，梁平，夏金松，胡颖，吕尊仁，于天，刘峰奇，杨涛，陈涌海，王占国   2017-08-15
（3）外延生长法制备的Si基1.3微米量子点激光器   第十二届全国硅基光电子材料及器件研讨会   杨冠卿，徐波，梁平，吕尊仁，胡颖，于天，刘峰奇，杨涛，陈涌海，王占国   2017-05-26