基本信息
于广辉  男  博导  中国科学院上海微系统与信息技术研究所
电子邮件: ghyu@mail.sim.ac.cn
通信地址: 上海市长宁路865号8号楼1203室
邮政编码: 2010050

招生信息

   
招生专业
080903-微电子学与固体电子学
080903-微电子学与固体电子学
085400-电子信息
招生方向
石墨烯薄膜材料的制备与应用
过渡金属硫化物二维材料制备与应用
hBN二维薄膜材料制备与应用

教育背景

1996-09--1999-07   中国科学院长春光学精密机械与物理研究所   博士
1989-09--1996-07   吉林大学   学士、硕士
学历
-- 研究生
学位
-- 博士

工作经历

   
工作简历
2008-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2002-04~2007-12,中国科学院上海微系统与信息技术研究所, 副研究员
1999-09~2002-03,日本千叶大学, 非常勤研究员(博士后)

专利与奖励

   
专利成果
[1] 张燕辉, 于广辉, 陈志蓥, 隋妍萍. 一种石墨薄膜的制备方法. CN: CN111072022A, 2020-04-28.

[2] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 梁逸俭, 胡诗珂, 李晶, 康鹤, 王爽. 一种改变双层石墨烯耦合性的方法及双层石墨烯. CN: CN110683533A, 2020-01-14.

[3] 张燕辉, 于广辉, 陈志蓥, 隋妍萍. 铜晶须的制备方法. CN: CN108570710A, 2018-09-25.

[4] 张燕辉, 于广辉, 陈志蓥, 隋妍萍, 葛晓明, 邓荣轩, 梁逸俭, 胡诗珂. 一种石墨烯-玻璃及其制备方法. CN: CN108439812A, 2018-08-24.

[5] 张燕辉, 于广辉, 陈志蓥, 隋妍萍, 葛晓明, 邓荣轩, 梁逸俭, 胡诗珂. 一种石墨烯玻璃. CN: CN206317488U, 2017-07-11.

[6] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种基于干法清洗工艺制备铜衬底的方法. CN: CN106884153A, 2017-06-23.

[7] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种基于清洗工艺制备铜衬底的方法. CN: CN106884152A, 2017-06-23.

[8] 张燕辉, 于广辉, 葛晓明, 张浩然, 陈志蓥, 隋妍萍, 邓荣轩. 一种干法转移金属衬底上石墨烯的方法. CN: CN106882792A, 2017-06-23.

[9] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 葛晓明, 胡诗珂, 梁逸俭. 一种提高石墨烯膜表面亲水性的方法. CN: CN106829943A, 2017-06-13.

[10] 于广辉, 吴天如, 谢晓明, 时志远, 陈吉, 张燕辉, 隋妍萍, 陈志蓥. 一种过渡金属硫族化合物二维材料—石墨烯异质结构及其原位生长方法. CN: CN106756871A, 2017-05-31.

[11] 于广辉, 张燕辉, 隋妍萍, 陈志蓥, 邓荣轩, 葛晓明, 梁逸俭, 胡诗珂. 一种无粘连金属密堆生长石墨烯的方法. CN: CN106756869A, 2017-05-31.

[12] 张燕辉, 于广辉, 隋妍萍, 陈志蓥, 邓荣轩, 葛晓明, 梁逸俭, 胡诗珂. 一种无粘连插层金属箔片堆垛制备石墨烯的方法. CN: CN106591798A, 2017-04-26.

[13] 隋妍萍, 于广辉, 张燕辉, 陈志蓥, 葛晓明, 张浩然. 一种基于石墨烯的表面增强拉曼基底及其制备方法. CN: CN106248649A, 2016-12-21.

[14] 张燕辉, 于广辉, 陈志蓥, 王斌, 隋妍萍, 张浩然, 张亚欠, 李晓良. 一种石墨烯的表征方法. CN: CN105021621A, 2015-11-04.

[15] 张浩然, 于广辉, 张燕辉, 张亚欠, 陈志蓥, 隋妍萍. 基于氧化亚铜薄膜衬底低成核密度石墨烯单晶的制备方法. CN: CN104975344A, 2015-10-14.

[16] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 张浩然, 张亚欠, 葛晓明, 徐伟. 一种提高金属电极与石墨烯欧姆接触的方法. CN: CN104851787A, 2015-08-19.

[17] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 张浩然, 张亚欠, 葛晓明, 徐伟. 一种通过高温高压提高石墨烯表面洁净度的方法. CN: CN104803377A, 2015-07-29.

[18] 张燕辉, 于广辉, 陈志蓥, 王斌, 隋妍萍, 张浩然, 张亚欠, 李晓良. 一种利用石墨烯判定铜衬底表面晶向的方法. CN: CN104807810A, 2015-07-29.

[19] 张燕辉, 于广辉, 陈志蓥, 王斌, 隋妍萍, 张浩然, 张亚欠, 李晓良. 一种CVD石墨烯薄膜区域择优选取的方法. CN: CN104805419A, 2015-07-29.

[20] 王斌, 于广辉, 赵智德, 徐伟, 隋妍萍, 张燕辉. 一种用于HVPE生长GaN单晶的复合籽晶模板及方法. CN: CN104078335A, 2014-10-01.

[21] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 张浩然, 张亚欠, 汤春苗, 朱博, 李晓良. 一种提高石墨烯表面洁净度的湿法腐蚀化学转移法. CN: CN104030274A, 2014-09-10.

[22] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 一种柔性导热垫片的制备方法. CN: CN103965839A, 2014-08-06.

[23] 王斌, 于广辉, 赵志德, 徐伟, 张燕辉, 陈志蓥, 隋妍萍. 一种GaN单晶自支撑衬底的制备方法. CN: CN103928583A, 2014-07-16.

[24] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 一种增强泡沫铜在较高温度下抗氧化能力的方法. CN: CN103924207A, 2014-07-16.

[25] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 一种增强泡沫铜抗氧化能力的方法. CN: CN103924274A, 2014-07-16.

[26] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 王斌, 张浩然, 张亚欠, 李晓良. 一种通过无损掺杂提高石墨烯迁移率的方法. CN: CN103896262A, 2014-07-02.

[27] 陈志蓥, 于广辉, 张燕辉, 隋妍萍, 王斌, 张浩然, 张亚欠, 汤春苗, 朱博, 李晓良. 一种辨别石墨烯连续膜完整性的方法. CN: CN103900870A, 2014-07-02.

[28] 陈志蓥, 于广辉, 王斌, 张燕辉, 王彬, 赵智德, 吴渊文, 张浩然. 一种修饰石墨烯薄膜的方法. CN: CN103848416A, 2014-06-11.

[29] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 直观显示金属衬底上CVD石墨烯表面缺陷分布的方法. CN: CN103352210A, 2013-10-16.

[30] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 直观显示金属衬底上CVD石墨烯表面褶皱分布的方法. CN: CN103353437A, 2013-10-16.

[31] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 增大化学气相沉积石墨烯单晶晶畴尺寸的方法. CN: CN103352249A, 2013-10-16.

[32] 张燕辉, 于广辉, 陈志蓥, 王彬, 张浩然. 便于观察金属衬底上化学气相沉积石墨烯表面褶皱分布的方法. CN: CN103353276A, 2013-10-16.

[33] 王浩敏, 谢红, 刘晓宇, 张有为, 陈志蓥, 于广辉, 谢晓明. 一种石墨烯场效应器件制备方法. CN: CN102915929A, 2013-02-06.

[34] 吴渊文, 于广辉, 师小萍, 王彬, 张燕辉, 陈志蓥. 一种在钼基衬底上制备石墨烯薄膜的方法. CN: CN102344131A, 2012-02-08.

[35] 雷本亮, 于广辉, 王笑龙, 齐鸣, 孟胜, 李爱珍. 以多孔氮化镓作为衬底的氮化镓膜的生长方法. CN: CN1828837B, 2011-04-20.

[36] 王新中, 于广辉, 林朝通, 曹明霞, 卢海峰, 李晓良, 巩 航, 齐 鸣, 李爱珍. 一种厚膜氮化镓与衬底蓝宝石自剥离的实现方法. CN: CN101488475B, 2010-09-01.

[37] 王新中, 于广辉, 雷本亮, 林朝通, 王笑龙, 齐 鸣. 采用干法刻蚀制备氮化镓纳米线阵列的方法. CN: CN101229912B, 2010-06-16.

[38] 王新中, 于广辉, 林朝通, 曹明霞, 巩 航, 齐 鸣, 李爱珍. HVPE方法生长氮化镓膜中的SiO 2 纳米掩膜及方法. 中国: CN100565804, 2009-12-02.

[39] 于广辉, 王新中, 林朝通, 曹明霞, 卢海峰, 李晓良, 巩 航, 齐 鸣, 李爱珍. HVPE方法生长GaN膜中使用的多孔材料衬底及方法. CN: CN101514484A, 2009-08-26.

[40] 王新中, 于广辉, 林朝通, 曹明霞, 巩 航, 齐 鸣, 李爱珍. 利用均匀纳米粒子点阵掩模提高厚膜GaN质量的方法. CN: CN101350298A, 2009-01-21.

[41] 林朝通, 于广辉, 雷本亮, 王新中, 王笑龙, 齐 鸣. 钨辅助热退火制备氮化镓纳米线的制备方法. CN: CN101220466A, 2008-07-16.

[42] 王笑龙, 于广辉, 隋妍萍, 雷本亮, 齐 鸣, 李爱珍. 一种因干法刻蚀受损伤的氮化镓基材料的回复方法. CN: CN1838384A, 2006-09-27.

[43] 雷本亮, 于广辉, 齐鸣, 叶好华, 孟胜, 李爱珍. 一种改变氢化物气相外延法生长的氮化镓外延层极性的方法. CN: CN1832112A, 2006-09-13.

[44] 雷本亮, 于广辉, 齐鸣, 叶好华, 孟胜, 李爱珍. 氢化物气相外延生长氮化镓膜中的氧化铝掩膜及制备方法. CN: CN1744287A, 2006-03-08.

[45] 雷本亮, 于广辉, 齐 鸣, 叶好华, 孟 胜, 李爱珍. 氢化物气相外延生长氮化镓膜中的金属插入层及制备方法. CN: CN1737195A, 2006-02-22.

[46] 于广辉, 叶好华, 雷本亮, 李爱珍, 齐鸣. 一种用于气相沉积的水平式反应器结构. CN: CN1242093C, 2006-02-15.

[47] 于广辉, 雷本亮, 叶好华, 齐 鸣, 李爱珍. 氢化物气相外延生长氮化镓膜中的低温插入层及制备方法. CN: CN1587438A, 2005-03-02.

[48] 于广辉, 雷本亮, 叶好华, 齐鸣, 李爱珍. 改进氢化物气相外延生长氮化镓结晶膜表面质量的方法. CN: CN1588624A, 2005-03-02.

[49] 孙洪波, 李玉东, 胡礼中, 苏士昌, 于广辉, 刘式墉. 五段式碰撞脉冲锁模量子阱激光器. CN: CN1043174C, 1999-04-28.

出版信息

   
发表论文
[1] Chen, Zhiying, Sui, Yanping, Li, Jing, Kang, He, Wang, Shuang, Zhao, Sunwen, Gao, Xiuli, Peng, Songang, Jin, Zhi, Liu, Xinyu, Zhang, Yanhui, Yu, Guanghui. Conversion of the stacking orientation of bilayer graphene through high-pressure treatment. CARBON[J]. 2021, 172: 480-487, http://dx.doi.org/10.1016/j.carbon.2020.10.026.
[2] Li, Jing, Hu, Shike, Wang, Shuang, Kang, He, Chen, Zhiying, Zhao, Sunwen, Zhang, Yanhui, Sui, Yanping, Yu, Guanghui. The degradation of CVD-grown MoS2 domains in atmospheric environment. MATERIALS LETTERS[J]. 2021, 290: http://dx.doi.org/10.1016/j.matlet.2021.129421.
[3] Li, Jing, Wang, Shuang, Jiang, Qi, Qian, Haoji, Hu, Shike, Kang, He, Chen, Chen, Zhan, Xiaoyi, Yu, Aobo, Zhao, Sunwen, Zhang, Yanhui, Chen, Zhiying, Sui, Yanping, Qiao, Shan, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu. Single-Crystal MoS2 Monolayer Wafer Grown on Au (111) Film Substrates. SMALL[J]. 2021, 17(30): http://dx.doi.org/10.1002/smll.202100743.
[4] Liang, Yijian, Zhang, Yanhui, Chen, Zhiying, Hu, Shike, Kang, He, Li, Jing, Sui, Yanping, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu. Stability of Graphene Growth on CuNi Thin Films in a High-Temperature Hydrogen/Oxygen Atmosphere. CRYSTAL GROWTH & DESIGN[J]. 2020, 20(2): 1211-1217, [5] 胡诗珂, 李晶, 展肖依, 王爽, 雷龙彪, 梁逸俭, 康鹤, 张燕辉, 陈志蓥, 隋妍萍, 姜达, 于广辉, 彭松昂, 金志, 刘新宇. 蓝宝石衬底上NaOH辅助CVD法制备有序单层MoS2条带. 中国科学:材料科学(英文版)[J]. 2020, 63(6): 1065-1075, http://lib.cqvip.com/Qikan/Article/Detail?id=7102088074.
[6] Chen, Zhiying, Liang, Yijian, Liu, Aiping, Zhang, Yanhui, Sui, Yanping, Hu, Shike, Li, Jing, Kang, He, Wang, Shuang, Zhao, Sunwen, Yu, Guanghui. One-step hydrothermal synthesis of three-dimensional structures of MoS2/Cu2S hybrids via a copper foam-assisted method. MATERIALS LETTERS[J]. 2020, 273: http://dx.doi.org/10.1016/j.matlet.2020.127928.
[7] Li, Jing, Hu, Shike, Chen, Zhiying, Liang, Yijian, Kang, He, Zhang, Yanhui, Sui, Yanping, Wang, Shuang, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu. Facile and rigorous route to distinguish the boundary structure of monolayer MoS2 domains by oxygen etching. APPLIED SURFACE SCIENCE[J]. 2020, 510: http://dx.doi.org/10.1016/j.apsusc.2020.145412.
[8] Hu, Shike, Li, Jing, Zhan, Xiaoyi, Wang, Shuang, Lei, Longbiao, Liang, Yijian, Kang, He, Zhang, Yanhui, Chen, Zhiying, Sui, Yanping, Jiang, Da, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu. Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition. SCIENCE CHINA-MATERIALS[J]. 2020, 63(6): 1065-1075, https://www.webofscience.com/wos/woscc/full-record/WOS:000522915800004.
[9] Zhang, Yanhui, Shu, Haibo, Chen, Zhiying, Mu, Gang, Sui, Yanping, Liang, Yijian, Hu, Shike, Li, Jing, Kang, He, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu. Chemical vapor deposition growth and characterization of graphite-like film. MATERIALS RESEARCH EXPRESS[J]. 2020, 7(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000520469600001.
[10] Peng, Songang, Jin, Zhi, Yao, Yao, Huang, Xinnan, Zhang, Dayong, Niu, Jiebin, Shi, Jingyuan, Zhang, Yanhui, Yu, Guanghui. Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering. ADVANCED ELECTRONIC MATERIALS[J]. 2020, 6(9): http://dx.doi.org/10.1002/aelm.202000496.
[11] Hu, Shike, Li, Jing, Wang, Shuang, Liang, Yijian, Kang, He, Zhang, Yanhui, Chen, Zhiying, Sui, Yanping, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu. Detecting the Repair of Sulfur Vacancies in CVD-Grown MoS2 Domains via Hydrogen Etching. JOURNAL OF ELECTRONIC MATERIALS[J]. 2020, 49(4): 2547-2555, https://www.webofscience.com/wos/woscc/full-record/WOS:000515627400001.
[12] Sui, Yanping, Zhang, Yanhui, Chen, Zhiying, Liang, Yijian, Li, Jing, Hu, Shike, Kang, He, Yu, Guanghui. Crack-and-Fold Style Defects in CVD Graphene on Raw Cu Foils. JOURNAL OF ELECTRONIC MATERIALS[J]. 2020, 49(7): 4403-4409, https://www.webofscience.com/wos/woscc/full-record/WOS:000531232000004.
[13] Liang, Yijian, Zhang, Yanhui, Chen, Zhiyin, Ge, Xiaoming, Hu, Shike, Li, Jing, Sui, Yanping, Yu, Guanghui. Re-nucleation and Etching of Graphene During the Cooling Stage of Chemical Vapor Deposition. JOURNAL OF ELECTRONIC MATERIALS[J]. 2019, 48(3): 1740-1745, https://www.webofscience.com/wos/woscc/full-record/WOS:000457748600059.
[14] Sui, Yanping, Chen, Zhiying, Zhang, Yanhui, Hu, Shike, Liang, Yijian, Ge, Xiaoming, Li, Jing, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu. Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition. RSC ADVANCES[J]. 2018, 8(34): 18757-18761, https://www.webofscience.com/wos/woscc/full-record/WOS:000433391600002.
[15] Chen, Zhiying, Zhang, Yanhui, Ge, Xiaoming, Sui, Yanping, Liang, Yijian, Hu, Shike, Li, Jing, Yu, Guanghui. Thermal-assisted direct transfer of graphene onto flexible substrates. MATERIALS LETTERS[J]. 2018, 229: 252-255, http://dx.doi.org/10.1016/j.matlet.2018.06.124.
[16] Ge, Xiaoming, Zhang, Yanhui, Chen, Zhiying, Liang, Yijian, Hu, Shike, Sui, Yanping, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu. Effects of carbon-based impurities on graphene growth. PHYSICALCHEMISTRYCHEMICALPHYSICS[J]. 2018, 20(22): 15419-15423, https://www.webofscience.com/wos/woscc/full-record/WOS:000439170200047.
[17] Zhang, Y H, Chen, Z Y, Ge, X M, Liang, Y J, Hua, S K, Sui, Y P, Yu, G H. A waterless cleaning method of the Cu foil for CVD graphene growth. MATERIALS LETTERS[J]. 2018, 211: 258-260, http://dx.doi.org/10.1016/j.matlet.2017.09.100.
[18] Ge, Xiaoming, Zhang, Yanhui, Chen, Lingxiu, Zheng, Yonghui, Chen, Zhiying, Liang, Yijian, Hu, Shike, Li, Jing, Sui, Yanping, Yu, Guanghui, Jin, Zhi, Liu, Xinyu. Mechanism of SiOx particles formation during CVD graphene growth on Cu substrates. CARBON[J]. 2018, 139: 989-998, http://dx.doi.org/10.1016/j.carbon.2018.08.007.
[19] Deng, Rongxuan, Zhang, Haoran, Zhang, Yanhui, Chen, Zhiying, Sui, Yanping, Ge, Xiaoming, Liang, Yijian, Hu, Shike, Yu, Guanghui, Jiang, Da. Graphene/Mo2C heterostructure directly grown by chemical vapor deposition. CHINESE PHYSICS B[J]. 2017, 26(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000403063000001.
[20] Guanghui Yu. Stripe distribution on graphene-coated Cu surface and its effect on oxidation and corrosion resistance of grapheme. Journal of Applied Physics. 2017, [21] Peng, Songang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Mao, Dacheng, Wang, Shaoqing, Yu, Guanghui. Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor. ACS APPLIED MATERIALS & INTERFACES[J]. 2017, 9(8): 6661-6665, https://www.webofscience.com/wos/woscc/full-record/WOS:000395494200002.
[22] Zhang, Haoran, Zhang, Yanhui, Zhang, Yaqian, Chen, Zhiying, Sui, Yanping, Ge, Xiaoming, Yu, Guanghui, Jin, Zhi, Liu, Xinyu. Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching. NANOSCALE[J]. 2016, 8(7): 4145-4150, http://159.226.55.106/handle/172511/16149.
[23] Tang, Chunmiao, Chen, Zhiying, Zhang, Haoran, Zhang, Yaqian, Zhang, Yanhui, Sui, Yanping, Yu, Guanghui, Cao, Yijiang. Enhancement of the Electrical Properties of CVD-Grown Graphene with Ascorbic Acid Treatment. JOURNAL OF ELECTRONIC MATERIALS[J]. 2016, 45(2): 1160-1164, https://www.webofscience.com/wos/woscc/full-record/WOS:000371167600034.
[24] Guanghui Yu. Effects of Cu substrate surface fluctuations on grapheme during transfer. Materials Letters. 2016, [25] Zhang, Haoran, Zhang, Yaqian, Zhang, Yanhui, Chen, Zhiying, Sui, Yanping, Ge, Xiaoming, Deng, Rongxuan, Yu, Guanghui, Jin, Zhi, Liu, Xinyu. Realizing controllable graphene nucleation by regulating the competition of hydrogen and oxygen during chemical vapor deposition heating. PHYSICAL CHEMISTRY CHEMICAL PHYSICS[J]. 2016, 18(34): 23638-23642, https://www.webofscience.com/wos/woscc/full-record/WOS:000382107200022.
[26] Zhang, Yanhui, Zhang, Haoran, Li, Feng, Shu, Haibo, Chen, Zhiying, Sui, Yanping, Zhang, Yaqian, Ge, Xiaoming, Yu, Guanghui, Jin, Zhi, Liu, Xinyu. Invisible growth of microstructural defects in graphene chemical vapor deposition on copper foil. CARBON[J]. 2016, 96: 237-242, http://dx.doi.org/10.1016/j.carbon.2015.09.041.
[27] Guanghui Yu. High pressure-assisted transfer of ultraclean chemical vapor deposited graphene. Appl Phys Lett,. Appl. Phys. Lett.. 2016, [28] 金智. Improved Carrier Mobility of CVD-Graphene by Counter-Doping with Hydrazine Hydrate. APPLIED PHYSICS LETTERS[J]. 2015, http://www.irgrid.ac.cn/handle/1471x/1089146.
[29] 金智. Stripe distributions of graphene-coated Cu foils and their effects on the reduction of graphene wrinkles. RCS ADVANCES[J]. 2015, http://www.irgrid.ac.cn/handle/1471x/1089150.
[30] Sui, Yanping, Zhu, Bo, Zhang, Haoran, Shu, Haibo, Chen, Zhiying, Zhang, Yanhui, Zhang, Yaqian, Wang, Bin, Tang, Chunmiao, Xie, Xiaoming, Yu, Guanghui, Jin, Zhi, Liu, Xinyu. Temperature-dependent nitrogen configuration of N-doped graphene by chemical vapor deposition. CARBON[J]. 2015, 81: 814-820, http://dx.doi.org/10.1016/j.carbon.2014.10.030.
[31] Zhao, ZhiDe, Wang, Bin, Xu, Wei, Zhang, HaoRan, Chen, ZhiYing, Yu, GuangHui. Hydride vapor phase epitaxy of GaN on self-organized patterned graphene masks. MATERIALS LETTERS[J]. 2015, 153: 152-154, http://dx.doi.org/10.1016/j.matlet.2015.04.042.
[32] Zhang, Yaqian, Zhang, Haoran, Zhang, Yanhui, Chen, Zhiying, Tang, Chunmiao, Sui, Yanping, Wang, Bin, Li, Xiaoliang, Xie, Xiaoming, Yu, Guanghui, Jin, Zhi, Liu, Xinyu. Undulate Cu(111) Substrates: A Unique Surface for CVD Graphene Growth. JOURNAL OF ELECTRONIC MATERIALS[J]. 2015, 44(10): 3550-3555, http://www.irgrid.ac.cn/handle/1471x/1089147.
[33] Wang, B, Zhao, Z D, Xu, W, Sui, Y P, Yu, G H. Effects of the surface stoichiometry of seeds on GaN layer growth by hydride vapour phase epitaxy. PHYSICAL CHEMISTRY CHEMICAL PHYSICS[J]. 2015, 17(17): 11193-11197, https://www.webofscience.com/wos/woscc/full-record/WOS:000353338800009.
[34] Zhang, Haoran, Zhang, Yanhui, Wang, Bin, Chen, Zhiying, Sui, Yanping, Zhang, Yaqian, Tang, Chunmiao, Zhu, Bo, Xie, Xiaoming, Yu, Guanghui, Jin, Zhi, Liu, Xinyu. Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition. JOURNAL OF ELECTRONIC MATERIALS[J]. 2015, 44(1): 79-86, http://www.irgrid.ac.cn/handle/1471x/1089144.
[35] Wang, Bin, Zhang, Yanhui, Zhang, Haoran, Chen, Zhiying, Xie, Xiaoming, Sui, Yanping, Li, Xiaoliang, Yu, Guanghui, Hu, Lizhong, Jin, Zhi, Liu, Xinyu. Wrinkle-dependent hydrogen etching of chemical vapor deposition-grown graphene domains. CARBON[J]. 2014, 70: 75-80, http://dx.doi.org/10.1016/j.carbon.2013.12.074.
[36] Guanghui Yu. The distribution of wrinkles and their effects on the oxidation resistance of chemical vapor deposition grapheme. Carbon. 2014, [37] Wang, Bin, Zhao, Zhide, Xu, Wei, Sui, Yanpin, Yu, Guanghui. Influence of annealing porous templates in an ammonia atmosphere on gallium nitride growth behaviors in hydride vapor phase epitaxy. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2014, 27: 541-545, https://www.webofscience.com/wos/woscc/full-record/WOS:000345644000073.
[38] Sui, Yanping, Wang, Bin, Zhao, Zhide, Xu, Wei, Li, Xiaoliang, Yu, Guanghui, Wang, Xinzhong. Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering. JOURNAL OF ELECTRONIC MATERIALS[J]. 2014, 43(7): 2715-2722, https://www.webofscience.com/wos/woscc/full-record/WOS:000336796700033.
[39] Wang, Bin, Zhang, HaoRan, Zhang, YanHui, Chen, ZhiYing, Jin, Zhi, Liu, XinYu, Hu, LiZhong, Yu, GuangHui. Effect of Cu substrate roughness on growth of graphene domains at atmospheric pressure. MATERIALS LETTERS[J]. 2014, 131: 138-140, http://dx.doi.org/10.1016/j.matlet.2014.05.155.
[40] Zhao, Z D, Wang, B, Sui, Y P, Xu, W, Li, X L, Yu, G H. Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates. JOURNAL OF ELECTRONIC MATERIALS[J]. 2014, 43(3): 786-790, https://www.webofscience.com/wos/woscc/full-record/WOS:000330954600018.
[41] Guanghui Yu. Role of wrinkles in the corrosion of graphene domain-coated Cu surface. Appl. Phys. Lett.. 2014, [42] Chen, Z Y, Zhang, Y H, Zhang, H R, Sui, Y P, Zhang, Y Q, Yu, G H, Jin, Z, Liu, X Y. Probing graphene grain boundaries and enhancing the electrical properties of graphene films by Pt modification. MATERIALS LETTERS[J]. 2014, 131: 53-56, http://dx.doi.org/10.1016/j.matlet.2014.05.113.
[43] Sui, Yanping, Wang, Bin, Zhao, Zhide, Xu, Wei, Li, Xiaoliang, Wang, Xinzhong, Yu, Guanghui. Facet growth of self-separated GaN layers through HVPE on large square-patterned template. JOURNAL OF CRYSTAL GROWTH[J]. 2014, 394: 11-17, http://dx.doi.org/10.1016/j.jcrysgro.2014.01.059.
[44] Zhang, Y H, Chen, Z Y, Wang, B, Wu, Y W, Jin, Z, Liu, X Y, Yu, G H. Controllable growth of millimeter-size graphene domains on Cu foil. MATERIALS LETTERS[J]. 2013, 96: 149-151, http://dx.doi.org/10.1016/j.matlet.2013.01.024.
[45] Wang, Bin, Zhang, Yanhui, Chen, Zhiying, Wu, Yuanwen, Jin, Zhi, Liu, Xinyu, Hu, Lizhong, Yu, Guanghui. High quality graphene grown on single-crystal Mo(110) thin films. MATERIALS LETTERS[J]. 2013, 93: 165-168, http://dx.doi.org/10.1016/j.matlet.2012.11.088.
[46] Wu, Yuanwen, Yu, Guanghui, Wang, Haomin, Wang, Bin, Chen, Zhiying, Zhang, Yanhui, Wang, Bin, Shi, Xiaoping, Xie, Xiaoming, Jin, Zhi, Liu, Xinyu. Synthesis of large-area graphene on molybdenum foils by chemical vapor deposition. CARBON[J]. 2012, 50(14): 5226-5231, http://dx.doi.org/10.1016/j.carbon.2012.07.007.
[47] Lu, H F, Yu, G H, Lin, C T, Wang, X Z, Wang, B, Shi, X P, Qi, M, Li, A Z. High quality GaN film overgrown on GaN nanorods array template by HVPE. MATERIALS LETTERS[J]. 2010, 64(13): 1490-1492, http://dx.doi.org/10.1016/j.matlet.2010.03.070.
[48] Wang, X Z, Yu, G H, Lin, C T, Cao, M X, Gong, H, Qi, M, Li, A Z. Effect of nanoporous GaN templates with different pore diameters on the subsequent thick GaN layers by HVPE. SOLID STATE COMMUNICATIONS[J]. 2010, 150(3-4): 168-171, http://dx.doi.org/10.1016/j.ssc.2009.10.025.
[49] Lin, Chaotong, Yu, Guanghui, Wang, Xinzhong, Cao, Mingxia, Lu, Haifeng, Gong, Hang, Qi, Ming, Li, Aizhen. Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template. MATERIALS LETTERS[J]. 2009, 63(11): 943-945, http://dx.doi.org/10.1016/j.matlet.2009.01.061.
[50] Guanghui Yu. Catalyst-free growth of well vertically aligned GaN needlelike nanowires array with low-field electron emission propertie. J. Phys. Chem. C. 2008, [51] Lin, Chaotong, Yu, Guanghui, Wang, Xinzhong, Cao, Mingxia, Gong, Hang, Qi, Ming, Li, Aizhen. Improved GaN film overgrown with a molybdenum nanoisland mask. APPLIED PHYSICS LETTERS[J]. 2008, 93(3): http://ir.sim.ac.cn/handle/331004/94931.
[52] Wang, Xinzhong, Yu, Guanghui, Lin, Chaotong, Cao, Mingxia, Lu, Haifeng, Gong, Hang, Li, Xiaoliang, Qi, Ming, Li, Aizhen. High-Quality Thick GaN Overgrown on an Array of SiO2 Nanomasks by HVPE. JOURNAL OF THE ELECTROCHEMICAL SOCIETY[J]. 2008, 155(12): H1000-H1002, http://ir.sim.ac.cn/handle/331004/94986.
[53] Lei, Benliang, Yu, Guanghui, Ye, Haohua, Meng, Sheng, Wang, Xinzhong, Lin, Chaotong, Qi, Ming, Li, Aizhen, Nouet, Grard, Ruterana, Pierre, Chen, Jun. Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation. THIN SOLID FILMS[J]. 2008, 516(12): 3772-3775, http://dx.doi.org/10.1016/j.tsf.2007.06.101.
[54] Wang, Xinzhong, Yu, Guanghui, Lin, Chaotong, Cao, Mingxia, Gong, Hang, Qi, Ming, Li, Aizhen. Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy. ELECTROCHEMICAL AND SOLID STATE LETTERS[J]. 2008, 11(10): H273-H275, http://ir.sim.ac.cn/handle/331004/115323.

科研活动

   
科研项目
( 1 ) HVPE法生长GaN自支撑衬底项目(横向成果转化课题), 负责人, 其他任务, 2011-04--2020-12
( 2 ) Graphene场效应晶体管及其集成技术研究, 参与, 国家任务, 2012-01--2016-12
( 3 ) 金属衬底上石墨烯制备(JK973), 参与, 国家任务, 2013-01--2016-12
( 4 ) 面向自旋逻辑应用的二维材料可控制备, 负责人, 国家任务, 2017-01--2017-11
( 5 ) 面向逻辑器件应用的高质量二硫化钼单晶晶圆的制备, 负责人, 国家任务, 2018-01--2019-12
( 6 ) 高质量石墨烯材料应用研究, 负责人, 国家任务, 2019-01--2020-12
( 7 ) 面向自旋逻辑应用的二维材料制备, 负责人, 国家任务, 2020-05--2021-12
( 8 ) 面向高开关比、低功耗逻辑器件应用的4英寸高质量二硫化钼单晶晶圆制备, 负责人, 地方任务, 2020-10--2022-09
( 9 ) 面向柔性电子器件应用的高质量石墨烯单晶晶圆制备, 负责人, 地方任务, 2021-05--2023-04

指导学生

已指导学生

卢海峰  硕士研究生  080903-微电子学与固体电子学  

师小萍  硕士研究生  080903-微电子学与固体电子学  

曹明霞  硕士研究生  080903-微电子学与固体电子学  

吴渊文  硕士研究生  080903-微电子学与固体电子学  

赵智德  博士研究生  080903-微电子学与固体电子学  

张亚欠  硕士研究生  080903-微电子学与固体电子学  

张浩然  博士研究生  080903-微电子学与固体电子学  

邓荣轩  硕士研究生  080903-微电子学与固体电子学  

葛晓明  博士研究生  080903-微电子学与固体电子学  

梁逸俭  博士研究生  080903-微电子学与固体电子学  

胡诗珂  博士研究生  080903-微电子学与固体电子学  

李晶  博士研究生  080903-微电子学与固体电子学  

朱虹延  博士研究生  080903-微电子学与固体电子学  

康鹤  博士研究生  080903-微电子学与固体电子学  

现指导学生

王爽  博士研究生  080903-微电子学与固体电子学  

肖润涵  硕士研究生  085400-电子信息  

赵孙文  博士研究生  080903-微电子学与固体电子学  

田闯  硕士研究生  085600-材料与化工  

刘家文  博士研究生  080903-微电子学与固体电子学