基本信息
左玉华  女  博导  中国科学院半导体研究所
电子邮件: yhzuo@semi.ac.cn
通信地址: 北京市912信箱光电子研发中心
邮政编码: 100083

招生信息

   
招生专业
0805Z2-半导体材料与器件
招生方向
硅基低维材料与光电器件
硅基光电子材料与器件

教育背景

2000-09--2003-06   中科院半导体所   博士
1997-09--2000-06   清华大学材料系   硕士
1992-09--1997-06   清华大学材料系   本科

工作经历

   
工作简历
2019-08~2019-10,挪威能源所, 访问学者
2015-08~2016-03,美国UCLA, 访问学者
2013-01~现在, 中国科学院半导体研究所, 正研
2005-07~2013-01,中国科学院半导体研究所, 副研
2003-07~2005-07,中科院半导体所, 助研
2000-09~2003-06,中科院半导体所, 博士
1997-09~2000-06,清华大学材料系, 硕士
1992-09~1997-06,清华大学材料系, 本科
社会兼职
2017-04-03-2018-04-08,北京市纳米结构薄膜太阳能工程中心技术委员会委员, 委员

教授课程

新型光伏材料和器件
低维材料制备、表征及应用
材料制备与加工

专利与奖励

   
专利成果
( 1 ) 钙钛矿太阳电池PN结及其制备方法, 2023, 第 2 作者, 专利号: CN112397650B

( 2 ) 表面覆盖有 LiF 薄膜的钙钛矿薄膜及其制备方法, 2023, 第 5 作者, 专利号: 202310317866.4

( 3 ) 半导体紫外探测器及其制备方法, 2022, 第 3 作者, 专利号: CN115548148A

( 4 ) 红外探测器, 2022, 第 3 作者, 专利号: CN115295640A

( 5 ) 光谱探测器及其制备方法, 2022, 第 5 作者, 专利号: ZL114649423A

( 6 ) 钙钛矿单晶的生长方法及装置, 2022, 第 6 作者, 专利号: ZL114197044A

( 7 ) 集成加热型锗波导热光调制器结构及其制备方法, 2022, 第 4 作者, 专利号: CN112099246B

( 8 ) 一种钙钛矿薄膜的制备方法及钙钛矿LED, 2021, 第 3 作者, 专利号: CN113066947A

( 9 ) 增强紫外波段响应度的硅雪崩光电二极管及其制备方法, 2021, 第 2 作者, 专利号: CN112864268A

( 10 ) 太阳能电池模块, 2021, 专利号: CN112740433A

( 11 ) GeSn/钙钛矿异质结宽光谱探测器及其制作方法, 2021, 第 6 作者, 专利号: CN112670366A

( 12 ) 钙钛矿太阳电池PN结及其制备方法, 2021, 第 2 作者, 专利号: CN112397650A

( 13 ) 背接触式钙钛矿发光二极管, 2019, 第 3 作者, 专利号: CN110085756A

( 14 ) 用于碳基钙钛矿太阳能电池的介孔碳电极及其制备方法, 2019, 第 3 作者, 专利号: CN109671849A

( 15 ) 一种Cu@SiO 2 核壳结构的制备方法, 2018, 第 4 作者, 专利号: CN105536788B

( 16 ) 一种SiO x 基锂离子电池复合负极材料的制备方法, 2016, 第 4 作者, 专利号: CN105826560A

( 17 ) 一种SiO x 基锂离子电池复合负极材料的制备方法, 2016, 第 4 作者, 专利号: CN105826560A

( 18 ) 一种CuSiO 2 核壳结构的制备方法, 2016, 第 4 作者, 专利号: CN105536788A

( 19 ) 一种Si基复合负极材料及其锂电池的制备方法, 2016, 第 4 作者, 专利号: CN105406134A

( 20 ) 半导体纳米线有序阵列分布的制备方法, 2014, 第 3 作者, 专利号: CN104051576A

( 21 ) 硅基锗激光器及其制备方法, 2013, 第 6 作者, 专利号: CN103427332A

( 22 ) 下转换荧光材料的制备方法, 2013, 第 3 作者, 专利号: CN102977880A

( 23 ) 非晶硅中间带太阳能电池及其制备方法, 2013, 第 3 作者, 专利号: CN102891191A

( 24 ) 太阳能电池减反膜, 2012, 第 3 作者, 专利号: CN102738251A

( 25 ) 太阳能电池模块, 2012, 第 3 作者, 专利号: CN102683467A

( 26 ) 非晶硅薄膜中间带材料及其制备方法, 2012, 第 3 作者, 专利号: CN102544243A

( 27 ) 共掺杂的硅基杂质中间带材料的制备方法, 2011, 第 2 作者, 专利号: CN102191563A

( 28 ) 一种基于键合技术制作微波传输线的方法, 2011, 第 3 作者, 专利号: CN102055053A

( 29 ) 在Si衬底上分子束外延生长GeSn合金的方法, 2011, 第 9 作者, 专利号: CN101962802A

( 30 ) GeSn合金的外延生长方法, 2010, 第 3 作者, 专利号: CN101928990A

( 31 ) 半导体纳米柱阵列结构的制作方法, 2010, 第 3 作者, 专利号: CN101870453A

( 32 ) 一种光子晶体可调谐滤波器及其制作方法, 2008, 第 2 作者, 专利号: CN101210979A

( 33 ) 一种SiGe弛豫衬底材料及其制备方法, 2008, 第 2 作者, 专利号: CN101207093A

( 34 ) 一种硅基电光材料, 2008, 第 2 作者, 专利号: CN101174034A

( 35 ) 半导体应变弛豫材料的制作方法, 2008, 第 5 作者, 专利号: CN101097850A

( 36 ) 宽频域的硅基微机械可调谐光滤波器的制作方法, 2007, 第 1 作者, 专利号: CN1979256A

( 37 ) 具有平顶响应的窄带热光可调谐法布里-珀罗滤波器, 2007, 第 1 作者, 专利号: CN1979240A

( 38 ) 具有双吸收区结构的高效可调谐光探测器, 2007, 第 2 作者, 专利号: CN1979901A

( 39 ) 高效微机械可调谐共振腔增强型探测器及其制作方法, 2006, 第 3 作者, 专利号: CN1812303A

( 40 ) 一种高效热调谐共振腔增强型探测器及其制作方法, 2006, 第 3 作者, 专利号: CN1812302A

( 41 ) 平顶和陡峭带边响应的窄带热光调谐Fabry-Perot滤波器, 2005, 第 2 作者, 专利号: CN1655482A

( 42 ) 具有平顶输出响应的窄带Fabry-Perot滤波器, 2005, 第 2 作者, 专利号: CN1655478A

( 43 ) 高效硅基共振腔增强型探测器器件的制作方法, 2005, 第 3 作者, 专利号: CN1652326A

( 44 ) 硅基高量子效率共振腔增强型探测器及制作方法, 2005, 第 4 作者, 专利号: CN1624502

出版信息

   
发表论文
(1) 980 nm Near-Infrared Light-Emitting Diode Using All-Inorganic Perovskite Nanocrystals Doped with Ytterbium Ions, TSINGHUA SCIENCE AND TECHNOLOGY, 2024, 第 8 作者  通讯作者
(2) Broad-Spectrum Germanium Photodetector Based on the Ytterbium-Doped Perovskite Nanocrystal Downshifting Effect, ACS Appl. Opt. Mater., 2023, 第 6 作者  通讯作者
(3) Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers, TSINGHUA SCIENCE AND TECHNOLOGY, 2023, 第 3 作者  通讯作者
(4) Sn component gradient GeSn photodetector with 3 dB bandwidth over 50 GHz for extending L band telecommunication, Optics Letters, 2023, 第 7 作者
(5) Metalorganic vapor-phase epitaxy of ��-(AlxGa1-x)2O3 on (2 0 1) Ga2O3 substrates, Journal of Crystal Growth, 2023, 第 5 作者
(6) High Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR., Advanced Optical Materials, 2023, 第 14 作者  通讯作者
(7) Growth and characterization of GePb/Ge multiple quantum wells, Journal of Alloys and Compounds, 2023, 第 8 作者
(8) Impact of Strontium Doping on Quasi-Two-Dimensional Perovskite Layers for Sky-Blue Light-Emitting Diodes, ACS Applied Optical Materials, 2023, 第 7 作者  通讯作者
(9) Investigation on n-Type (-201) beta-Ga2O3 Ohmic Contact via Si Ion Implantation, TSINGHUA SCIENCE AND TECHNOLOGY, 2023, 第 5 作者
(10) Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 um for mid-infrared Si photonics, APPLIED PHYSICS LETTERS, 2022, 第 8 作者
(11) Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors, Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors, PHOTONICS RESEARCH, 2022, 第 10 作者
(12) GeSn resonance cavity enhanced photodetector with gold bottom reflector for the L band optical communication, Optics Letters, 2022, 第 9 作者
(13) Interface modification of TiO2 electron transport layer with PbCl2 for perovskiote solar cells with carbon electrode, Tsinghua Science & Technology, 2022, 第 2 作者  通讯作者
(14) Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 ��m on Ge-on-Si platform, Optics Express, 2022, 第 9 作者
(15) 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application, PHOTONICS RESEARCH, 2021, 第 7 作者
(16) Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite, Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite, TSINGHUA SCIENCE AND TECHNOLOGY, 2021, 第 5 作者  通讯作者
(17) Drop-casting CsPbBr3 Perovskite Quantum Dots as Down-shifting Layer Enhancing the Ultraviolet Response of Silicon Avalanche Photodiode, Applied Physics Letters, 2021, 第 1 作者  通讯作者
(18) Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 7 作者
(19) Germanium lead alloy on insulator grown by rapid melting growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 第 9 作者
(20) 新型硅基IV族合金材料生长及光电器件研究进展(特邀), Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited), 光子学报, 2021, 第 5 作者
(21) Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 第 7 作者
(22) A facile method for preparing Yb3+-doped perovskite nanocrystals with ultra-stable near-infrared light emission, RSC ADVANCES, 2020, 第 6 作者  通讯作者
(23) Investigation of lead surface segregation during germanium���lead epitaxial growth, JOURNAL OF MATERIALS SCIENCE, 2020, 第 8 作者
(24) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2�����m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 8 作者
(25) Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn, SCIENTIFIC REPORTS, 2020, 第 8 作者
(26) High-power back-to-back dual-absorption germanium photodetector, OPTICS LETTERS, 2020, 第 6 作者
(27) Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates, Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates, PHOTONICS RESEARCH, 2020, 第 7 作者
(28) Enhanced effect of 1,2-dichlorobenzene on the property of PC61BM and perovskite films for planar heterojunction perovskite solar cells, ORGANIC ELECTRONICS, 2020, 第 3 作者  通讯作者
(29) 56 Gbps high-speed Ge electro-absorption modulator, 56 Gbps high-speed Ge electro-absorption modulator, PHOTONICS RESEARCH, 2020, 第 6 作者
(30) High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 第 9 作者
(31) High-Performance Germanium Waveguide Photodetectors on Silicon, High-Performance Germanium Waveguide Photodetectors on Silicon*, CHINESE PHYSICS LETTERS, 2020, 第 8 作者
(32) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 8 作者
(33) Study of GePb photodetectors for shortwave infrared detection, OPTICS EXPRESS, 2019, 第 5 作者
(34) Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, 清华大学学报自然科学版(英文版), 2019, 第 4 作者
(35) Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes, NANOSCALE RESEARCH LETTERS, 2019, 第 4 作者
(36) Enhanced Efficiency of Carbon-Based Mesoscopic Perovskite Solar Cells through a Tungsten Oxide Nanoparticle Additive in the Carbon Electrode, SCIENTIFIC REPORTS, 2019, 第 2 作者  通讯作者
(37) Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes, ENERGY TECHNOLOGY, 2019, 第 6 作者
(38) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 第 5 作者
(39) Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, TSINGHUASCIENCEANDTECHNOLOGY, 2019, 第 4 作者
(40) Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 第 7 作者  通讯作者
(41) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 5 作者
(42) Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, JOURNAL OF CRYSTAL GROWTH, 2018, 第 4 作者
(43) MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors, ENERGY TECHNOLOGY, 2018, 第 5 作者
(44) The Growth of GeSn Layer on Patterned Si Substrate by MBE Method, SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 2018, 第 7 作者
(45) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 5 作者
(46) Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes, NANOSCALE RESEARCH LETTERS, 2018, 第 5 作者
(47) Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 4 作者
(48) Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1���xSnx, IEEE Transactions On Electron Devices, 2018, 第 1 作者
(49) Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 第 9 作者
(50) Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 6 作者
(51) Characterization of a Ge1���x���ySiySnx/Ge1���xSnx multiple quantum well structure grown by sputtering epitaxy, LETTER, 2017, 第 8 作者
(52) Insight into the effect of ligand-exchange on colloidal CsPbBr3 perovskite quantum dot/mesoporous-TiO2 composite-based photodetectors: much faster electron injection, JOURNAL OF MATERIALS CHEMISTRY C, 2017, 第 7 作者  通讯作者
(53) Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy, OPTICS LETTERS, 2017, 第 8 作者
(54) Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 5 作者
(55) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, 半导体学报(英文版), 2017, 第 6 作者
(56) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, JOURNAL OF SEMICONDUCTORS, 2017, 第 6 作者
(57) Facile and Efficient Synthesis of a Microsized SiOx/C Core���Shell Composite as Anode Material for Lithium Ion Batteries, ENERGY & FUELS, 2017, 第 6 作者
(58) High-performance ball-milled SiOx anodes for lithium ion batteries, JOURNAL OF POWER SOURCES, 2017, 第 5 作者
(59) Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys, JOURNAL OF MATERIALS SCIENCE, 2017, 第 6 作者
(60) All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance, DALTON TRANSACTIONS, 2017, 第 5 作者  通讯作者
(61) Numerical calculation of strain-N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 第 5 作者
(62) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 7 作者
(63) Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering, VACUUM, 2016, 第 2 作者  通讯作者
(64) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 7 作者
(65) High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode, ELECTROCHIMICA ACTA, 2016, 第 5 作者
(66) Temperature dependent direct-bandgap light emission and optical gain of Ge, CHINESE PHYSICS B, 2016, 第 6 作者
(67) Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery, NANOSCALE RESEARCH LETTERS, 2016, 第 6 作者
(68) Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 第 7 作者
(69) Efficient 1.54-��m emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation, JOURNAL OF LUMINESCENCE, 2015, 第 3 作者
(70) Ni ohmic contacts to n-type Ge1���x���ySixSny using phosphorous implant and segregation, AIP ADVANCES, 2015, 第 5 作者
(71) High hole mobility GeSn on insulator formed by self-organized seeding lateral growth, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 第 6 作者
(72) Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering, OPTICAL MATERIALS EXPRESS, 2015, 第 4 作者
(73) Efficient 1.54-mu m emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation, JOURNAL OF LUMINESCENCE, 2015, 第 3 作者
(74) Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth, THIN SOLID FILMS, 2015, 第 5 作者
(75) Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE ELECTRON DEVICE LETTERS, 2015, 第 7 作者
(76) Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 第 5 作者
(77) Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications, VACUUM, 2015, 第 2 作者  通讯作者
(78) Enhanced light trapping in periodically truncated cone silicon nanowire structure, JOURNAL OF SEMICONDUCTORS, 2015, 第 2 作者  通讯作者
(79) Growth of Crystalline Ge1-xSnx Films on Si (100) by Magnetron Sputtering, ECS SOLID STATE LETTERS, 2014, 第 4 作者
(80) Structural, optical and electrical properties of Ti doped amorphous silicon prepared by co-sputtering, VACUUM, 2014, 第 2 作者  通讯作者
(81) Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance, NANOSCALE RESEARCH LETTERS, 2014, 第 6 作者
(82) Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate, APPLIED PHYSICS LETTERS, 2014, 第 6 作者
(83) Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering, JOURNAL OF LUMINESCENCE, 2014, 第 3 作者
(84) Strong Eu 2+ light emission in Eu silicate through Eu 3+ reduction in Eu 2 O 3, NANOSCALE RESEARCH LETTERS, 2013, 第 3 作者
(85) Ge-Si quantum dots thin film solar cells, APPLIED PHYSICS LETTERS, 2013, 第 4 作者
(86) Enhanced photoluminescence from porous silicon nanowire arrays, NANOSCALE RESEARCH LETTERS, 2013, 第 6 作者
(87) Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth, JOURNAL OF APPLIED PHYSICS, 2013, 第 6 作者
(88) 用阶梯变化金属纳米光栅增加介质中的光吸收, 太阳能, 2013, 第 2 作者
(89) Impact of ammonia on the electrical properties of p-type Si nanowire arrays, JOURNAL OF APPLIED PHYSICS, 2013, 第 6 作者
(90) 硅薄膜太阳电池高效陷光结构的研究, Study on Light Trapping Structure for Silicon Film Solar Cells, 半导体光电, 2012, 
(91) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, 中国物理英文版, 2012, 第 6 作者
(92) 单载流子光电探测器的高速及高饱和功率的研究, High-speed and high-power uni-traveling-carrier photodetector, 物理学报, 2012, 第 2 作者
(93) Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping, OPTICS EXPRESS, 2012, 第 8 作者
(94) 衬底引起的Si/SiO2多层结构中应变问题, Chinese Physics B, 2012, 第 1 作者  通讯作者
(95) Intense 974 nm emission from ErxYb2���xSi2O7 films through efficient energy transfer up-conversion from Er3+ to Yb3+ for Si solar cell, JOURNAL OF LUMINESCENCE, 2012, 第 5 作者
(96) Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO) Multilayer Nanostructure, NANO-MICRO LETTERS, 2012, 第 3 作者  通讯作者
(97) Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells, APPLIED PHYSICS LETTERS, 2012, 第 7 作者
(98) High-speed and high-power uni-traveling-carrier photodetector, ACTA PHYSICA SINICA, 2012, 第 2 作者
(99) Ge-on-Si for Si-based integrated materials and photonic devices, FRONTIERS OF OPTOELECTRONICS, 2012, 第 6 作者
(100) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, CHINESE PHYSICS B, 2012, 第 2 作者  通讯作者
(101) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, CHINESE PHYSICS B, 2012, 第 2 作者  通讯作者
(102) Detailed balance limit efficiency of silicon intermediate band solar cells, CHINESE PHYSICS B, 2011, 第 4 作者  通讯作者
(103) InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, 中国物理:英文版, 2011, 第 1 作者
(104) Detailed balance limit efficiency of silicon intermediate band solar cells, Detailed balance limit efficiency of silicon intermediate band solar cells, 中国物理:英文版, 2011, 第 4 作者
(105) 高掺杂Ti的SOI基PIN结构的近红外响应, Chinese Physics B, 2011, 第 1 作者  通讯作者
(106) Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 7 作者
(107) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, CHINESE PHYSICS B, 2011, 第 4 作者
(108) Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 3 作者
(109) The contributions of composition and strain to the phonon shift in ge1-xsnx alloys, SOLID STATE COMMUNICATIONS, 2011, 第 7 作者
(110) Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜, Epitaxial growth of Ge_(0.975)Sn_(0.025) alloy films on Si(001) substrates by molecular beam epitaxy, 物理学报, 2011, 第 7 作者
(111) Strained and strain-relaxed epitaxial Ge_(l-x)Sn_x alloys on Si(100)substrates, CHINESE PHYSICS. B, 2011, 第 5 作者
(112) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 6 作者
(113) Inp-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, CHINESE PHYSICS B, 2011, 第 1 作者  通讯作者
(114) Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates, CHINESE PHYSICS B, 2011, 第 5 作者
(115) Gesn p-i-n photodetector for all telecommunication bands detection, OPTICS EXPRESS, 2011, 第 9 作者
(116) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, 中国物理:英文版, 2011, 第 4 作者
(117) Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material, CHINESE PHYSICS B, 2011, 第 3 作者  通讯作者
(118) Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate, MATERIALS LETTERS, 2011, 第 5 作者
(119) 硅基中间带太阳电池的极限效率计算, Chinese Physics B, 2011, 第 1 作者  通讯作者
(120) 杂质带太阳能电池研究, Research on Impurity Band Photovoltaic Solar Cells, 中国集成电路, 2010, 第 3 作者
(121) 外延生长Gel-xSnx合金的研究进展, 材料导报, 2010, 第 6 作者
(122) 单行载流子光电探测器中空间电荷屏蔽效应理论分析和实验研究, Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode, 物理学报, 2010, 第 2 作者
(123) Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode, ACTA PHYSICA SINICA, 2010, 第 2 作者
(124) 外延生长Ge1-xSnx合金的研究进展, Progress in the Epitaxy Growth of Ge1-xSnx Alloy, 材料导报, 2010, 第 6 作者
(125) Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 第 5 作者
(126) 光通信C波段硅基导模共振窄带滤波器的模拟, Simulation of Silicon-based Guided-mode Resonant Grating Filters with Narrow Bandwidth for C-band Optical Communication, 半导体光电, 2009, 第 4 作者
(127) Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films, Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films, 半导体学报, 2009, 第 10 作者
(128) Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55 mu m: physics, design and simulation, CHINESE PHYSICS B, 2009, 第 2 作者  通讯作者
(129) Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors, CHINESE PHYSICS B, 2009, 第 2 作者
(130) A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions, CHINESE PHYSICS B, 2009, 第 5 作者
(131) A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er^3+ ions, A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er^3��� ions, 中国物理:英文版, 2009, 第 5 作者
(132) Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55μm: physics, design and simulation, Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55��m: physics, design and simulation, 中国物理:英文版, 2009, 第 5 作者
(133) A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator, CHINESE PHYSICS B, 2008, 第 2 作者
(134) A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator, A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator, 中国物理:英文版, 2008, 第 2 作者
(135) 基于稀释波导的InP衬底上高耦合效率、低偏振敏感度1.55μm波长光纤一波导耦合器, A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55��m Wavelength, 半导体学报, 2008, 第 2 作者
(136) Recent progresses of Si-based photonics in chinese main land, IEICE TRANSACTIONS ON ELECTRONICS, 2008, 第 5 作者
(137) 任意势垒隧穿几率的一种高精度数值算法, A Numerical Method for Calculating Transmission Coefficients Across Arbitrary Potential Barriers with High Accuracy, 半导体学报, 2008, 第 4 作者
(138) 高速、大饱和输出光电流1·55μm波段光电探测器的研究进展及其在光控相控阵雷达中的应用, Development of High-speed, High-output-photocurrent 1.55��m Photodetector and Its Application in Optical-controlled Phased Array Antenna, 中国集成电路, 2008, 第 2 作者
(139) 基于稀释波导的InP衬底上高耦合效率、低偏振敏感度1.55μm波长光纤一波导耦合器, A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55��m Wavelength, 半导体学报, 2008, 第 2 作者
(140) 任意势垒隧穿几率的一种高精度数值算法, A Numerical Method for Calculating Transmission Coefficients Across Arbitrary Potential Barriers with High Accuracy, 半导体学报, 2008, 第 4 作者
(141) 利用保偏光纤马赫-曾德(MZ)干涉仪测量薄膜材料电光系数, Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer, 半导体学报, 2007, 第 5 作者
(142) 利用保偏光纤马赫-曾德(MZ)干涉仪测量薄膜材料电光系数, Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer, 半导体学报, 2007, 第 5 作者
(143) A photonic crystal waveguide with silicon on insulator in the near-infrared band, CHINESE PHYSICS, 2007, 第 2 作者
(144) A photonic crystal waveguide with silicon on insulator in the near-infrared band, A photonic crystal waveguide with silicon on insulator in the near-infrared band, 中国物理:英文版, 2007, 第 2 作者
(145) A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3 ��m, CHINESE PHYSICS LETTERS, 2006, 第 2 作者
(146) A two-dimensional photonic crystal slab mirror with silicon on insulator for wavelength 1.3 mu m, CHINESE PHYSICS LETTERS, 2006, 第 2 作者
(147) Structure dependence of mode edges in photonic crystal waveguide with silicon on insulator, CHINESE PHYSICS LETTERS, 2006, 第 2 作者
(148) 500℃下利用UHV/CVD在Si衬底上直接生长近平面Si0.5Ge0.5层, Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500���, 功能材料与器件学报, 2006, 第 2 作者
(149) Comparison between double crystals x-ray diffraction micro-raman measurement on composition determination of high ge content si1_xgex layer epitaxied on si substrate, JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2006, 第 2 作者
(150) COMPARISON BETWEEN DOUBLE CRYSTALS X-RAY DIFFRACTION AND MICRO-RAMAN MEASUREMENT ON COMPOSITION DETERMINATION OF HIGH GE CONTENT SI1-XGEX LAYER EPITAXIED ON SI SUBSTRATE, Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si1-xGex Layer Epitaxied on Si Substrate, 材料科学技术学报(英文版), 2006, 第 2 作者
(151) 随机生长误差对双腔型平顶法布里-珀罗滤波器的影响, 光学学报, 2006, 第 2 作者
(152) 500℃下利用UHV/CVD在Si衬底上直接生长近平面Si0.5Ge0.5层, Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500���, 功能材料与器件学报, 2006, 第 2 作者
(153) Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy, SPECTROSCOPY AND SPECTRAL ANALYSIS, 2006, 第 3 作者
(154) B在SiGe中的应变补偿作用, Strain Compensation in SiGe by Boron Doping, 半导体学报, 2005, 第 7 作者
(155) Fabrication of 1.55��m Si-Based Resonant Cavity Enhanced Photodetectors, 半导体学报, 2005, 第 2 作者
(156) 硅基1.55μm可调谐共振腔窄带光电探测器的研究, The Fabrication of Low Cost Si-based Continuously Tunable 1. 55��m RCE Photodetector, 光子学报, 2005, 第 4 作者
(157) 硅基1.55μm共振腔增强型探测器, Fabrication of 1.55��m Si-Based Resonant Cavity Enhanced Photodetectors, 半导体学报, 2005, 第 2 作者
(158) 微腔调制常温Ge量子点光致发光特性, Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate, 半导体学报, 2005, 第 3 作者
(159) 热光调谐滤波器的高温性能分析, Effect of High Temperatures on Characteristics of Thermo-Optical Tunable Optical Filters, 半导体学报, 2005, 第 1 作者
(160) Si基热光可调谐窄带平顶滤波器, Fabrication of a Novel Si-Based Thermo-Optical Tunable Flat-Top Filter with Narrow Band, 半导体学报, 2005, 第 1 作者
(161) 带隙法测定SiGe/Si材料的应变状态, A method to estimate the strain state of SiGe/Si by measuring the bandgap, 物理学报, 2005, 第 7 作者
(162) 1.3~1.55μm光通信用VCSEL的研究进展, 光子技术, 2005, 第 2 作者
(163) 1.55μm MOEMS可调谐光滤波器调谐性能模拟, 光子学报, 2005, 第 1 作者
(164) 量子阱、超晶格结构的线性电光效应研究进展, 物理学进展, 2004, 第 2 作者
(165) SiGeC三元合金的研究进展, Research and development of SiGeC ternary alloy, 微纳电子技术, 2004, 第 2 作者
(166) SiGe共振腔增强型探测器的制备, Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector, 半导体学报, 2004, 第 8 作者
(167) 支撑光网络发展的Si基光子集成器件的研究进展, 光电子.激光, 2004, 第 7 作者
(168) SiGe共振腔增强型探测器的制备, Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector, 半导体学报, 2004, 第 3 作者
(169) 平顶响应的热光可调谐Fabry-Perot滤波器, 光电子.激光, 2004, 第 2 作者
(170) 1.55μm非晶硅热光F-P腔可调谐滤波器, 1.55��m Fabry-Perot Thermo-Optical Tunable Filter with Amorphous-Si as Cavity, 半导体学报, 2003, 第 1 作者
(171) 镜面起伏对1.55μmSi基MEMS光滤波器的影响, 光子学报, 2003, 第 1 作者
(172) 具有90nm调谐范围的1.3μm Si基MOEMS可调谐光滤波器, 半导体学报, 2003, 第 9 作者
(173) 1.55-μm Si-based MOEMS optical tunable filter, 1.55-��m Si-based MOEMS optical tunable filter, 中国光学快报:英文版, 2003, 第 1 作者
(174) 1.55µm MOEMS可调谐光滤波器与热光可调谐光滤波器, 2003, 第 1 作者
(175) 热光Si共振腔型可调谐滤波器, 半导体学报, 2003, 第 2 作者
(176) Si基长波长GeSiHPT探测器的研制, 光子学报, 2002, 第 5 作者
(177) CaO—Al2O3—SiO2系烧结微晶玻璃的结晶过程, 清华大学学报:自然科学版, 1999, 第 1 作者
(178) 热处理对CaO—Al2O3—SiO2系烧结微晶玻璃吸水率的影响, 清华大学学报:自然科学版, 1999, 第 2 作者
发表著作
( 1 ) 太阳能电池发展现状及提升效率的途径, 科学出版社, 2014-06, 第 2 作者

科研活动

   
科研项目
( 1 ) 面向硅基光电子应用的材料平台, 负责人, 国家任务, 2020-12--2024-11
( 2 ) 新型硅基稀土掺杂近红外激光器研究, 负责人, 国家任务, 2019-01--2022-12
( 3 ) 高灵敏Si 基APD 可靠性研究, 负责人, 国家任务, 2017-07--2020-06
( 4 ) 硅基新型低维钙钛矿材料及纳米光电器件应用研究, 负责人, 其他国际合作项目, 2016-06--2017-05
( 5 ) 硅器时代, 负责人, 中国科学院计划, 2015-01--2015-12
( 6 ) 具有三维径向纳米结构的非晶硅中间带薄膜材料及太阳电池应用的可行性研究, 负责人, 国家任务, 2014-01--2017-12
( 7 ) 运用量子尺寸效应和杂质中间带提高硅基太阳电池效率的研究, 负责人, 国家任务, 2011-01--2014-12
参与会议
(1)Reliability of Silicon Avalanche Photodetector in Geiger mode   左玉华   2018-10-01
(2)TRANSPORT MECHANISM OF NOVEL SILICON-RICHED NITRIDE (SRN)/SILICON-RICHED OXIDE (SRO) SUPERLATTICE QUANTUM DOT STRUCTURE   第38届电气电子工程师学会光伏专家会议   Yeliao Tao, Yuhua Zuo*, Jun Zheng, Quan Cao, Tianwei Zhou, Chunlai Xue, Buwen Cheng, Xiangbo Zeng, Qiming Wang   2012-06-02