基本信息
王振兴  男  硕导  中国科学院国家纳米科学中心
电子邮件: wangzx@nanoctr.cn
通信地址: 北京市中关村北一条11号
邮政编码: 100190

研究领域

低维半导体制备、性质调控及光电子器件



招生信息

   
招生专业
070205-凝聚态物理
070304-物理化学(含:化学物理)
招生方向
新型低维半导体纳米材料(一维、二维)的可控制备、物性调控;
新型电子、光电子及光信息器件
多体系复合材料的设计制备及其在能源、电子、光电子领域的应用。

教育背景

2006-02--2006-08   Alberta 大学,Canada   学术交流
2002-09--2009-05   中国科学技术大学   理学博士
1998-09--2002-07   中国科学技术大学   理学学士

工作经历

   
工作简历
2013-04~现在, 国家纳米科学中心, 副研究员
2011-07~2013-03,国家纳米科学中心, 助理研究员
2009-07~2011-06,北京大学, 博士后

专利与奖励

   
奖励信息
(1) 中国科学院卢嘉锡青年人才奖, 部委级, 2015
专利成果
[1] 王振兴, 王艳荣, 王峰, 何军. 一种基于铁电PN结的光电器件及其制备方法. CN: CN113793882A, 2021-12-14.
[2] 何军, 阿米尔·梅尔内贾特, 王振兴, 王峰, 詹雪莹. 一种MoTe 2 场效应晶体管及其制备方法和应用. CN: CN108987483B, 2021-11-23.
[3] 王振兴, 王俊俊, 王峰, 何军. 场效应晶体管及制备方法、逻辑门操作实现方法. CN: CN113594259A, 2021-11-02.
[4] 王振兴, 姚雨雨, 何军. 一种自插层钒基二维纳米片及其制备方法和应用. CN: CN113353980A, 2021-09-07.
[5] 何军, 马什特·盖泰·仙台, 王枫梅, 高宁, 王振兴. 非层状Sn 2 P 2 S 6 纳米片的制备方法及其在光催化析氢领域的应用. CN: CN113104885A, 2021-07-13.
[6] 何军, 李宁宁, 王振兴. 一种α-MnSe纳米片及其制备方法与用途. CN: CN112850660A, 2021-05-28.
[7] 何军, 姚雨雨, 张玉, 王振兴. 一种氯氧化镱纳米片及其制备方法和应用. CN: CN110316752A, 2019-10-11.
[8] 何军, 尹蕾, 程瑞清, 王振兴, 王峰. 一种范德华异质结器件及其制备方法和应用. CN: CN109390388A, 2019-02-26.
[9] 何军, 李杰, 王振兴, 阿米尔·玛杰, 爱迪尔·该. Bi 2 O x Se纳米片、其制备方法及用途. 中国: CN108217607A, 2018.06.29.
[10] 何军, 李杰, 王振兴, 阿米尔·玛杰, 爱迪尔·该. Bi 2 O x Se纳米片、其制备方法及用途. CN: CN108217607A, 2018-06-29.
[11] 何军, 许凯, 王振兴. 一种顶栅结构的超薄硫化铪光电晶体管及其制备方法. CN: CN105870245A, 2016-08-17.
[12] 何军, 王振兴, 穆罕默德·萨夫达尔. 单晶In 2 Te 3 纳米线及其制备以及准一维In 2 Te 3 纳米结构的宽谱光探测器及其制备. CN: CN103966570A, 2014-08-06.
[13] 何军, 王振兴, 穆罕默德·萨夫达尔. 单晶In 2 Te 3 纳米线及其制备以及准一维In 2 Te 3 纳米结构的宽谱光探测器及其制备. 中国: CN103966570A, 2014-08-06.
[14] 何军, 王振兴, 詹雪莹, 王雅君, 穆罕默德·萨夫达尔. 氧化锌/还原氧化石墨烯复合纳米材料及其制备方法以及紫外光探测器. CN: CN103884423A, 2014-06-25.
[15] 何军, 曹金利, 王振兴. 一种一维硒化锡纳米阵列、其制备方法和应用. CN: CN103482589A, 2014-01-01.
[16] 张琨, 王振兴, 王晓平, 侯建国. 10纳米级间隔的电极的制备方法. CN: CN1274010C, 2006-09-06.
[17] 胡海龙, 张琨, 王振兴, 石勤伟, 王晓平, 侯建国. 碳纳米管化学分子探测传感器及其制备方法. CN: CN1664570A, 2005-09-07.

出版信息

   
发表论文
[1] Yao, Yuyu, Zhan, Xueying, Ding, Chuyun, Wang, Feng, Wang, Yanrong, Yang, Jia, Wang, Zhenxing, He, Jun. One-step method to simultaneously synthesize separable Te and GeTe nanosheets. NANO RESEARCH[J]. 2022, 15(7): 6736-6742, http://dx.doi.org/10.1007/s12274-022-4330-6.
[2] Yuchen Cai, Feng Wang, Xinming Wang, Shuhui Li, Yanrong Wang, Jia Yang, Tao Yan, Xueying Zhan, Fengmei Wang, Ruiqing Cheng, Jun He, Zhenxing Wang. Broadband Visual Adaption and Image Recognition in a Monolithic Neuromorphic Machine. Advanced Functional Materials[J]. 2022, 32: 2212917-, [3] Sun, Zhaolou, Yu, Peng, Wang, Feng, Wang, Fengmei, Yao, Yuyu, Zhan, Xueying, Wang, Zhenxing, He, Jun. High-performance ultraviolet photodetectors based on 2D layered In4/3P2Se6 nanoflakes. APPLIED PHYSICS LETTERS[J]. 2022, 120(10): 103506-, http://dx.doi.org/10.1063/5.0085766.
[4] Yan, Tao, Liu, Fengjing, Wang, Yanrong, Yang, Jia, Ding, Chuyun, Cai, Yuchen, Wu, Zilong, Zhan, Xueying, Wang, Feng, Tian, Yanhong, He, Jun, Wang, Zhenxing. A Ferroelectric p-i-n Heterostructure for Highly Enhanced Short-Circuit Current Density and Self-Powered Photodetection. ADVANCED ELECTRONIC MATERIALS[J]. 2022, 8: 2101385-, http://dx.doi.org/10.1002/aelm.202101385.
[5] Yang, Jia, Wang, Feng, Guo, Jianfeng, Wang, Yanrong, Jiang, Chuanxiu, Li, Shuhui, Cai, Yuchen, Zhan, Xueying, Liu, Xinfeng, Cheng, Zhihai, He, Jun, Wang, Zhenxing. Ultrasensitive Ferroelectric Semiconductor Phototransistors for Photon-Level Detection. ADVANCED FUNCTIONAL MATERIALS[J]. 2022, 32: 2205468-, [6] Zilong Wu, Yuhan Zhu, Feng Wang, Chuyun Ding, Yanrong Wang, Xueying Zhan, Jun He, Zhenxing Wang. Lowering Contact Resistances of Two-Dimensional Semiconductors by Memristive Forming. Nano Letters[J]. 2022, 22: 7094-7103, [7] Zhu, Chuanchao, Wang, Yanrong, Wang, Feng, Yang, Jia, Zhan, Xueying, Fang, Liang, Wang, Zhenxing, He, Jun. Nonvolatile reconfigurable broadband photodiodes based on BP/alpha-In2Se3 ferroelectric p-n junctions. APPLIED PHYSICS LETTERS[J]. 2022, 120(8): 083101-, http://dx.doi.org/10.1063/5.0079535.
[8] Ding, Chuyun, Yao, Yuyu, Zhu, Leilei, Shang, Honghui, Xu, Peng, Liu, Xiaolin, Lin, Jia, Wang, Feng, Zhan, Xueying, He, Jun, Wang, Zhenxing. Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP. SMALL[J]. 2022, 18(16): 2108017-, http://dx.doi.org/10.1002/smll.202108017.
[9] Yuzhu Wang, Peng Wang, Hao Wang, Jun He, Zhenxing Wang, Jianping Shi. Room-Temperature Magnetoelectric Coupling in Atomically Thin ε-Fe2O3. Advanced Materials[J]. 2022, [10] Gao, Ning, Wang, Fengmei, Ding, Jianwei, Sendeku, Marshet G, Yu, Peng, Zhan, Xueying, Cai, Shuangfei, Xiao, Chunhui, Yang, Rong, He, Jun, Wang, Zhenxing. Intercalated Gold Nanoparticle in 2D Palladium Nanosheet Avoiding CO Poisoning for Formate Production under a Wide Potential Window. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 14(8): 10344-10352, [11] Yanrong Wang, Feng Wang, Shuhui Li, Jia Yang, Tao Yan, Yuchen Cai, Zilong Wu, Xueying Zhan, Jun He, Zhenxing Wang. Vertical Barrier Heterostructures for Reliable, Robust, and High-Performance Ultraviolet Detection. Small[J]. 2022, 18: 2204021-, [12] Wang, Yanrong, Wang, Feng, Wang, Zhenxing, Wang, Junjun, Yang, Jia, Yao, Yuyu, Li, Ningning, Sendeku, Marshet Getaye, Zhan, Xueying, Shan, Congxin, He, Jun. Reconfigurable photovoltaic effect for optoelectronic artificial synapse based on ferroelectric p-n junction. NANO RESEARCH[J]. 2021, 14(11): 4328-4335, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000692952000001.
[13] Wang, Junjun, Wang, Feng, Wang, Zhenxing, Huang, Wenhao, Yao, Yuyu, Wang, Yanrong, Yang, Jia, Li, Ningning, Yin, Lei, Cheng, Ruiqing, Zhan, Xueying, Shan, Chongxin, He, Jun. Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor. SCIENCE BULLETIN[J]. 2021, 66(22): 2288-2296, http://dx.doi.org/10.1016/j.scib.2021.06.020.
[14] Yao, Yuyu, Wen, Yao, Wang, Feng, Li, Ningning, Wang, Junjun, Wang, Yanrong, Yang, Jia, Zhan, Xueying, Wang, Zhenxing, He, Jun. Self-intercalated two-dimensional magnetic semiconductor V-8(S1-xSex)(15). APPLIED PHYSICS LETTERS[J]. 2021, 118(22): [15] Yao, Yuyu, Zhan, Xueying, Sendeku, Marshet Getaye, Yu, Peng, Dajan, Fekadu Tsegaye, Zhu, Chuanchao, Li, Ningning, Wang, Junjun, Wang, Feng, Wang, Zhenxing, He, Jun. Recent progress on emergent two-dimensional magnets and heterostructures. NANOTECHNOLOGYnull. 2021, 32(47): [16] Li, Ningning, Zhu, Leilei, Shang, Honghui, Wang, Feng, Zhang, Yu, Yao, Yuyu, Wang, Junjun, Zhan, Xueying, Wang, Fengmei, He, Jun, Wang, Zhenxing. Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger. NANOSCALE[J]. 2021, 13(14): 6953-6964, http://dx.doi.org/10.1039/d1nr00822f.
[17] Sendeku, Marshet G, Wang, Fengmei, Cheng, Zhongzhou, Yu, Peng, Gao, Ning, Zhan, Xueying, Wang, Zhenxing, He, Jun. Nonlayered Tin Thiohypodiphosphate Nanosheets: Controllable Growth and Solar-Light-Driven Water Splitting. ACS APPLIED MATERIALS & INTERFACES[J]. 2021, 13(11): 13392-13399, http://dx.doi.org/10.1021/acsami.1c00038.
[18] Liu, Pengfei, Yin, Lei, Feng, Liping, Sun, Yu, Sun, Hanqing, Xiong, Wenqi, Xia, Congxin, Wang, Zhenxing, Liu, Zhengtang. Controllable preparation of ultrathin 2D BiOBr crystals for high-performance ultraviolet photodetector. SCIENCE CHINA-MATERIALS[J]. 2021, 64(1): 189-197, https://www.webofscience.com/wos/woscc/full-record/WOS:000545348400001.
[19] Li, Ningning, Zhu, Leilei, Shang, Honghui, Wang, Feng, Zhang, Yu, Yao, Yuyu, Wang, Junjun, Zhan, Xueying, Wang, Fengmei, He, Jun, Wang, Zhenxing. Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe. NANOSCALE[J]. 2021, 13(14): 6953-6964, http://dx.doi.org/10.1039/d1nr00822f.
[20] 王峰, 刘佳, 黄文浩, 程瑞清, 尹蕾, 王俊俊, Marshet, Getaye, Sendeku, 张玉, 詹雪莹, 单崇新, 王振兴, 何军. 基于范德华铁电异质结的具有亚5nm沟道亚热电子场效应晶体管. 科学通报:英文版[J]. 2020, 65(17): 1444-1450, http://lib.cqvip.com/Qikan/Article/Detail?id=7102564769.
[21] Wang, Feng, Liu, Jia, Huang, Wenhao, Cheng, Ruiqing, Yin, Lei, Wang, Junjun, Sendeku, Marshet Getaye, Zhang, Yu, Zhan, Xueying, Shan, Chongxin, Wang, Zhenxing, He, Jun. Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures. SCIENCE BULLETIN[J]. 2020, 65(17): 1444-1450, http://dx.doi.org/10.1016/j.scib.2020.04.019.
[22] Yin, Lei, Cheng, Ruiqing, Wang, Zhenxing, Wang, Feng, Sendeku, Marshet Getaye, Wen, Yao, Zhan, Xueying, He, Jun. Two-Dimensional Unipolar Memristors with Logic and Memory Functions. NANO LETTERS[J]. 2020, 20(6): 4144-4152, https://www.webofscience.com/wos/woscc/full-record/WOS:000541691200011.
[23] Huang, Wenhao, Wang, Feng, Yin, Lei, Cheng, Ruiqing, Wang, Zhenxing, Sendeku, Marshet Getaye, Wang, Junjun, Li, Ningning, Yao, Yuyu, He, Jun. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions. ADVANCED MATERIALS[J]. 2020, 32(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000514617000001.
[24] Wen, Yao, Liu, Zhehong, Zhang, Yu, Xia, Congxin, Zhai, Baoxing, Zhang, Xinhui, Zhai, Guihao, Shen, Chao, He, Peng, Cheng, Ruiqing, Yin, Lei, Yao, Yuyu, Sendeku, Marshet Getaye, Wang, Zhenxing, Ye, Xubing, Liu, Chuansheng, Jiang, Chao, Shan, Chongxin, Long, Youwen, He, Jun. Tunable Room-Temperature Ferromagnetism in Two-Dimensional Cr2Te3. NANO LETTERS[J]. 2020, 20(5): 3130-3139, https://www.webofscience.com/wos/woscc/full-record/WOS:000535255300025.
[25] Wen, Yao, He, Peng, Yao, Yuyu, Zhang, Yu, Cheng, Ruiqing, Yin, Lei, Li, Ningning, Li, Jie, Wang, Junjun, Wang, Zhenxing, Liu, Chuansheng, Fang, Xuan, Jiang, Chao, Wei, Zhipeng, He, Jun. Bridging the van der Waals Interface for Advanced Optoelectronic Devices. ADVANCED MATERIALS[J]. 2020, 32(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000503845700001.
[26] Wen, Yao, He, Peng, Wang, Qisheng, Yao, Yuyu, Zhang, Yu, Hussain, Sabir, Wang, Zhenxing, Cheng, Ruiqing, Yin, Lei, Sendeku, Marshet Getaye, Wang, Feng, Jiang, Chao, He, Jun. Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices. ACS NANO[J]. 2019, 13(12): 14519-14528, https://www.webofscience.com/wos/woscc/full-record/WOS:000505633300089.
[27] Zhan, Xueying, Wang, Fengmei, Cheng, Zhongzhou, Wang, Zhenxing, He, Jun. Newly developed two-dimensional materials for efficient photocatalytic hydrogen evolution. SCIENCE BULLETIN. 2019, 64(14): 958-960, http://dx.doi.org/10.1016/j.scib.2019.06.004.
[28] Wang, Junjun, Wang, Feng, Wang, Zhenxing, Cheng, Ruiqing, Yin, Lei, Wen, Yao, Zhang, Yu, Li, Ningning, Zhan, Xueying, Xiao, Xiangheng, Feng, Liping, He, Jun. Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts. ADVANCED SCIENCE[J]. 2019, 6(11): https://doaj.org/article/c8af5f31bcde465992be67e9af6f36b7.
[29] Wang, Zhenxing, Sun, Chengguo, Shi, Ying, Qi, Fulai, Wei, Qinwei, Li, Xin, Sun, Zhenhua, An, Baigang, Li, Feng. A salt-derived solid electrolyte interphase by electroreduction of water-in-salt electrolyte for uniform lithium deposition. JOURNAL OF POWER SOURCES[J]. 2019, 439: http://dx.doi.org/10.1016/j.jpowsour.2019.227073.
[30] Cheng, Ruiqing, Yin, Lei, Wang, Feng, Wang, Zhenxing, He, Jun. Van der Waals integration of 2D atomic crystals for advanced multifunctional devices. SCIENCE BULLETIN. 2019, 64(15): 1033-1035, http://lib.cqvip.com/Qikan/Article/Detail?id=74888487504849574953484850.
[31] Wang, Feng, Tu, Bin, He, Peng, Wang, Zhenxing, Yin, Lei, Cheng, Ruiqing, Wang, Junjun, Fang, Qiaojun, He, Jun. Uncovering the Conduction Behavior of van der Waals Ambipolar Semiconductors. ADVANCED MATERIALS[J]. 2019, 31(1): http://dx.doi.org/10.1002/adma.201805317.
[32] Zhang, Yu, Yao, Yuyu, Sendeku, Marshet Getaye, Yin, Lei, Zhan, Xueying, Wang, Feng, Wang, Zhenxing, He, Jun. Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures. ADVANCED MATERIALSnull. 2019, 31(41): http://dx.doi.org/10.1002/adma.201901694.
[33] Cheng, Ruiqing, Yin, Lei, Wang, Feng, Wang, Zhenxing, Wang, Junjun, Wen, Yao, Huang, Wenhao, Sendeku, Marshet Getaye, Feng, Liping, Liu, Yufang, He, Jun. Anti-Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices. ADVANCED MATERIALS[J]. 2019, 31(24): http://dx.doi.org/10.1002/adma.201901144.
[34] Huang, Wenhao, Yin, Lei, Wang, Feng, Cheng, Ruiqing, Wang, Zhenxing, Sendeku, Marshet Getaye, Wang, Junjun, Li, Ningning, Yao, Yuyu, Yang, Xiaoguang, Shan, Chongxin, Yang, Tao, He, Jun. Multibit Optoelectronic Memory in Top-Floating-Gated van der Waals Heterostructures. ADVANCED FUNCTIONAL MATERIALS[J]. 2019, 29(36): http://dx.doi.org/10.1002/adfm.201902890.
[35] Wang, Junjun, Wang, Feng, Yin, Lei, Sendeku, Marshet Getaye, Zhang, Yu, Cheng, Ruiqing, Wang, Zhenxing, Li, Ningning, Huang, Wenhao, He, Jun. A unipolar nonvolatile resistive switching behavior in a layered transition metal oxide. NANOSCALE[J]. 2019, 11(43): 20497-20506, [36] Lei Yin, Peng He, Ruiqing Cheng, Feng Wang, Fengmei Wang, Zhenxing Wang, Yao Wen, Jun He. Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices. Nature Communications[J]. 2019, 10(1): 1-8, http://dx.doi.org/10.1038/s41467-019-12200-x.
[37] Yin, Lei, Wang, Feng, Cheng, Ruiqing, Wang, Zhenxing, Chu, Junwei, Wen, Yao, He, Jun. Van der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality. ADVANCED FUNCTIONAL MATERIALS[J]. 2019, 29(1): http://dx.doi.org/10.1002/adfm.201804897.
[38] Li, Ningning, Zhang, Yu, Cheng, Ruiqing, Wang, Junjun, Li, Jie, Wang, Zhenxing, Sendeku, Marshet Getaye, Huang, Wenhao, Yao, Yuyu, Wen, Yao, He, Jun. Synthesis and Optoelectronic Applications of a Stable p-Type 2D Material: alpha-MnS. ACS NANO[J]. 2019, 13(11): 12662-12670, http://dx.doi.org/10.1021/acsnano.9b04205.
[39] Yao, Yuyu, Zhang, Yu, Xiong, Wenqi, Wang, Zhenxing, Sendeku, Marshet Getaye, Li, Ningning, Wang, Junjun, Huang, Wenhao, Wang, Feng, Zhan, Xueying, Yuan, Shengjun, Jiang, Chao, Xia, Congxin, He, Jun. Growth and Raman Scattering Investigation of a New 2D MOX Material: YbOCl. ADVANCED FUNCTIONAL MATERIALS[J]. 2019, 29(43): http://dx.doi.org/10.1002/adfm.201903017.
[40] Li, Jie, Wang, Zhenxing, Chu, Junwei, Cheng, Zhongzhou, He, Peng, Wang, Junjun, Yin, Lei, Cheng, Ruiqing, Li, Ningning, Wen, Yao, He, Jun. Oriented layered Bi2O2Se nanowire arrays for ultrasensitive photodetectors. APPLIED PHYSICS LETTERS[J]. 2019, 114(15): http://dx.doi.org/10.1063/1.5094192.
[41] Ruiqing Cheng, Lei Yin, Feng Wang, Zhenxing Wang, Jun He. Van der Waals integration of 2D atomic crystals for advanced multifunctional devices. 科学通报:英文版. 2019, 1033-1035, http://lib.cqvip.com/Qikan/Article/Detail?id=74888487504849574953484850.
[42] Zhang, Yu, Chu, Junwei, Yin, Lei, Shifa, Tofik Ahmed, Cheng, Zhongzhou, Cheng, Ruiqing, Wang, Feng, Wen, Yao, Zhan, Xueying, Wang, Zhenxing, He, Jun. Ultrathin Magnetic 2D Single-Crystal CrSe. ADVANCED MATERIALS[J]. 2019, 31(19): http://dx.doi.org/10.1002/adma.201900056.
[43] Li, Ningning, Wen, Yao, Cheng, Ruiqing, Yin, Lei, Wang, Feng, Li, Jie, Shifa, Tofik Ahmed, Feng, Liping, Wang, Zhenxing, He, Jun. Strongly coupled van der Waals heterostructures for high-performance infrared phototransistor. APPLIED PHYSICS LETTERS[J]. 2019, 114(10): http://dx.doi.org/10.1063/1.5083685.
[44] Li, Wenqing, Zhan, Xueying, Song, Xianyin, Si, Shuyao, Chen, Rui, Liu, Jing, Wang, Zhenxing, He, Jun, Xiao, Xiangheng. A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting. SMALLnull. 2019, 15(31): [45] Xueying Zhan, Fengmei Wang, Zhongzhou Cheng, Zhenxing Wang, Jun He. Newly developed two-dimensional materials for efficient photocatalytic hydrogen evolution. 科学通报:英文版[J]. 2019, 64(14): 958-960, http://dx.doi.org/10.1016/j.scib.2019.06.004.
[46] Chu, Junwei, Zhang, Yu, Wen, Yao, Qiao, Ruixi, Wu, Chunchun, He, Peng, Yin, Lei, Cheng, Ruiqing, Wang, Feng, Wang, Zhenxing, Xiong, Jie, Li, Yanrong, He, Jun. Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr2S3 Nanosheets. NANO LETTERS[J]. 2019, 19(3): 2154-2161, http://dx.doi.org/10.1021/acs.nanolett.9b00386.
[47] Shifa, Tofik Ahmed, Wang, Fengmei, Cheng, Zhongzhou, He, Peng, Liu, Yang, Jiang, Chao, Wang, Zhenxing, He, Jun. High Crystal Quality 2D Manganese Phosphorus Trichalcogenide Nanosheets and their Photocatalytic Activity. ADVANCED FUNCTIONAL MATERIALS[J]. 2018, 28(18): http://dx.doi.org/10.1002/adfm.201800548.
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[56] Liu, Kaili, Wang, Fengmei, Shifa, Tofik Ahmed, Wang, Zhenxing, Xu, Kai, Zhang, Yu, Cheng, Zhongzhou, Zhan, Xueying, He, Jun. An efficient ternary CoP2xSe2(1-x) nanowire array for overall water splitting. NANOSCALE[J]. 2017, 9(11): 3995-4001, http://dx.doi.org/10.1039/c7nr00460e.
[57] Yin, Lei, Wang, Zhenxing, Wang, Feng, Xu, Kai, Cheng, Ruiqing, Wen, Yao, Li, Jie, He, Jun. Ferroelectric-induced carrier modulation for ambipolar transition metal dichalcogenide transistors. APPLIED PHYSICS LETTERS[J]. 2017, 110(12): http://dx.doi.org/10.1063/1.4979088.
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科研活动

   
科研项目
( 1 ) 基于硅纳米线的单分子器件研究, 主持, 国家级, 2011-06--2013-12
( 2 ) (In,Ga)2Te3一维纳米结构及其核壳复合材料的可控制备与光电性能研究, 参与, 国家级, 2013-01--2016-12
( 3 ) 微纳惯性器件运动界面纳米效应基础问题研究, 参与, 国家级, 2012-01--2016-08
( 4 ) 中科院青促会项目, 主持, 部委级, 2014-01--2017-12
( 5 ) 新型过渡金属硫属化合物二维半导体:可控制备、物性表征及光电子器件, 主持, 国家级, 2015-01--2018-12