研究领域为GaN基毫米波太赫兹波HEMT材料与器件、大功率GaN基HBT射频器件、GaN高压开关器件以及GaN基W波段、太赫兹波段PA、LNA电路设计与芯片研制等。

（1）GaN高载流子迁移率材料与晶体管

（2）90GHz ～ 300GHz 射频芯片设计与制造

​（3）250nm AlGaN 光电子材料与芯片

080903-微电子学与固体电子学
080501-材料物理与化学
080901-物理电子学

GaN射频毫米波与太赫兹器件及MMIC
氮化物半导体材料外延
GaN高压电力电子横向器件与纵向器件

2006-05--2011-07   佐治亚理工学院   博士
2001-09--2005-07   清华大学   本科

博士研究生

博士

   

2019-12~现在, 中国科学院半导体研究所, 副所长
2015-01~现在, 中国科学院半导体研究所, 所长助理
2012-04~现在, 中国科学院半导体研究所, 研究员
2011-08~2012-02,美国高平（Kopin）半导体公司, 研发工程师

半导体照明与氮化镓器件
半导体照明技术
专题实践

   

[1] 张韵, 崔冰玥, 杨杰. 多层量子阱深紫外发光二极管及其制备方法. CN: CN116053375A, 2023-05-02.
[2] 张连, 张韵, 王欣远. 半导体器件及其制作方法. 202211143850.8, 2022-09-20.
[3] 张韵, 王欣远, 张连, 高幸发. 异质结双极型晶体管及其制作方法. CN202211083876.8, 2022-09-06.
[4] 张韵, 王欣远, 张连, 高幸发. 异质结双极型晶体管及其制作方法. CN: CN115312593A, 2022-11-08.
[5] 艾玉杰, 张韵, 杨帅, 孙莉莉, 程哲, 张连, 贾丽芳, 王军喜, 李晋闽. 兰姆波谐振器及其制备方法. CN: CN113904652A, 2022-01-07.
[6] 程哲, 张韵, 张连. 绝缘栅双极型晶体管及其制备方法. 202010445714.9, 2021-09-02.
[7] 艾玉杰, 张韵, 杨帅, 孙莉莉, 程哲, 张连, 贾丽芳, 王军喜, 李晋闽. 兰姆波谐振器及其制备方法. CN: CN113794462A, 2021-12-14.
[8] 张韵, 倪茹雪",null,null,null,"王立军. 半导体激光器及其制备方法. CN: CN113507040A, 2021-10-15.
[9] 张韵, 王琳, 程哲, 林德峰. 用于半桥模块寄生电感校准测试的测试装置及方法. CN: CN113156216A, 2021-07-23.
[10] 张韵, 叶蕾, 刘喆. 激光照明装置. CN: CN212510987U, 2021-02-09.
[11] 张韵",null,"刘喆. 激光照明装置. CN: CN112648548A, 2021-04-13.
[12] 刘喆, 吴晨昱, 张韵. 高显色指数及色温可调的高光通量白光激光照明装置. CN: CN111578159A, 2020-08-25.
[13] 张韵, 杨秀霞, 张连. p型栅增强型氮化镓基高迁移率晶体管结构及制作方法. CN: CN111446296A, 2020-07-24.
[14] 张韵, 倪茹雪, 刘喆, 张连, 程哲. 一种AlGaN基二极管及其制备方法. CN: CN111341893B, 2021-03-26.
[15] 张韵, 倪茹雪. 在侧向外延薄膜上自对准形成图形及制备外延材料的方法. CN: CN109920727A, 2019-06-21.
[16] 张韵, 吕宏瑞, 艾玉杰. 一种体声波谐振器的结构及其制备方法. CN: CN109672419A, 2019-04-23.
[17] 张韵, 吕宏瑞, 艾玉杰. 声学滤波器与HEMT异构集成的结构及其制备方法. CN: CN109534278A, 2019-03-29.
[18] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 一种无线充电系统. CN: CN209329789U, 2019-08-30.
[19] 张韵, 赵璐, 张连. 半导体器件及其制备方法. CN: CN109148590A, 2019-01-04.
[20] 张韵, 倪茹雪. 可提高LED出光效率的硅基反射圈、制备方法及LED器件. CN: CN110299441A, 2019-10-01.
[21] 张韵, 赵璐, 艾玉杰, 孙莉莉, 杨帅, 程哲, 张连, 贾利芳, 王军喜. GaN基LED器件. CN: CN207765474U, 2018-08-24.
[22] 张韵, 赵璐, 艾玉杰, 孙莉莉, 杨帅, 程哲, 张连, 贾利芳, 王军喜. GaN基LED器件及其制备方法. CN: CN108110097A, 2018-06-01.
[23] 程哲, 张连, 张韵. 一种凹槽阳极肖特基二极管及其制备方法. CN: CN108010959A, 2018-05-08.
[24] 程哲, 张连, 张韵. 一种凹槽阳极肖特基二极管的制备方法. CN: CN108091566A, 2018-05-29.
[25] 张韵, 杨秀霞, 张连, 程哲. 增强型GaN HEMT的制备方法. CN: CN107887435A, 2018-04-06.
[26] 艾玉杰, 杨帅, 张韵, 孙莉莉, 程哲, 张连, 贾丽芳, 王军喜, 李晋闽. 声表面波谐振器、滤波器及其制备方法. CN: CN107634734A, 2018-01-26.
[27] 艾玉杰, 张韵, 杨帅. 体声波谐振器及其底电极的制备方法. CN: CN107437930A, 2017-12-05.
[28] 倪茹雪, 张韵. 一种带有LED杀菌降解有机物功能的手持洗衣装置. CN: CN107119417A, 2017-09-01.
[29] 谢海忠, 闫建昌, 魏学成, 魏同波, 宋昌斌, 张韵, 王军喜, 李晋闽. 芯片尺寸级深紫外发光二极管共晶封装方法. CN: CN107256911A, 2017-10-17.
[30] 郭亚楠, 张韵, 闫建昌, 王军喜, 李晋闽. 高光出射效率的LED芯片及其制备方法. CN: CN107068826A, 2017-08-18.
[31] 倪茹雪, 张韵, 郭亚楠, 王军喜, 李晋闽. 一种LED芯片的图形化基板结构及其制备方法. CN: CN106531871A, 2017-03-22.
[32] 谢海忠, 闫建昌, 魏学成, 孙莉莉, 宋昌斌, 张韵, 王军喜, 李晋闽. 一种杀菌消毒的装置. CN: CN106517410A, 2017-03-22.
[33] 谢海忠, 闫建昌, 魏学成, 孙莉莉, 宋昌斌, 张韵, 王军喜, 李晋闽. 一种杀菌消毒的装置. CN: CN206337054U, 2017-07-18.
[34] 闫建昌, 谢海忠, 王军喜, 魏学成, 孙莉莉, 张韵, 李晋闽. 一种具有紫外杀菌消毒功能的水表. CN: CN106441485A, 2017-02-22.
[35] 闫建昌, 谢海忠, 王军喜, 魏学成, 孙莉莉, 张韵, 李晋闽. 一种具有紫外杀菌消毒功能的水表. 中国: CN206440330U, 2017-08-25.
[36] 闫建昌, 孙莉莉, 张韵, 王军喜, 李晋闽. 紫外发光二极管器件的制备方法. CN: CN106784180A, 2017-05-31.
[37] 郭亚楠, 张韵, 王军喜, 李晋闽. LED倒装基板的结构. CN: CN206236704U, 2017-06-09.
[38] 张韵, 郭亚楠, 曹峻松, 王军喜, 李晋闽. 一种LED芯片的图形化基板及其制备方法. CN: CN106505130A, 2017-03-15.
[39] 孙莉莉, 张韵, 杨帅, 程哲, 张连, 吕宏瑞, 王军喜, 李晋闽. 单晶体声波器件及制备方法. CN: CN106374032A, 2017-02-01.
[40] 郭亚楠, 曹峻松, 谢海忠, 张韵, 王军喜, 李晋闽. 隐形切割制备正、倒和倒梯形台状衬底的LED芯片的方法. CN: CN106328778A, 2017-01-11.
[41] 孙莉莉, 张韵, 程哲, 张连, 王军喜, 李晋闽. 金属上单晶氮化物薄膜制备方法及体声波谐振器. CN: CN106341095A, 2017-01-18.
[42] 孙莉莉, 张韵, 程哲, 张连, 王军喜, 李晋闽. 一种体声波器件的制备方法. CN: CN106341094A, 2017-01-18.
[43] 黄宇亮, 程哲, 张连, 张韵, 王军喜, 李晋闽. 增强型高电子迁移率晶体管及制备方法、半导体器件. CN: CN105720097A, 2016-06-29.
[44] 程哲, 张韵, 张连. 栅极与源漏极异面的GaN基HEMT的结构及其制作方法. CN: CN105047709A, 2015-11-11.
[45] 张连, 张韵, 王军喜, 李晋闽. 降低基区电阻率的GaN基HBT外延结构及生长方法. CN: CN104900689A, 2015-09-09.
[46] 张连, 张韵, 王军喜, 李晋闽. 无掺杂剂的AlGaN基紫外发光二极管及制备方法. CN: CN104882522A, 2015-09-02.
[47] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 采用侧壁等离激元技术提高紫外发光二极管效率的方法. CN: CN104465905A, 2015-03-25.
[48] 纪攀峰, 谢海忠, 梁萌, 马平, 张韵, 王军喜, 李晋闽. 倒装结构的氮化镓基高电子迁移率晶体管的制作方法. CN: CN104538304A, 2015-04-22.
[49] 纪攀峰, 谢海忠, 郭恩卿, 马平, 张韵, 王军喜, 李晋闽. 转移衬底的氮化镓基高电子迁移率晶体管制作的方法. CN: CN104538303A, 2015-04-22.
[50] 张连, 张韵, 闫建昌, 王军喜, 李晋闽. 一种具有极化诱导掺杂高阻层的GaN基HEMT结构及生长方法. CN: CN104241352A, 2014-12-24.
[51] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 一种紫外发光二极管器件的制备方法. CN: CN103956414A, 2014-07-30.
[52] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 紫外发光二极管器件的制备方法. CN: CN103943737B, 2016-09-28.
[53] 闫建昌, 王军喜, 张韵, 丛培沛, 孙莉莉, 董鹏, 田迎冬, 李晋闽. 氮化物半导体发光二极管外延片、器件及其制备方法. CN: CN103811609A, 2014-05-21.
[54] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 可杀菌消毒的多功能餐盒. CN: CN203692762U, 2014-07-09.
[55] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 多功能LED手电筒. CN: CN203743880U, 2014-07-30.
[56] 田迎冬, 董鹏, 张韵, 闫建昌, 孙莉莉, 王军喜, 李晋闽. 氮化镓激光器腔面的制作方法. CN: CN103701037A, 2014-04-02.
[57] 董鹏, 王军喜, 闫建昌, 张韵, 曾建平, 孙莉莉, 李晋闽. 在蓝宝石衬底上制备微纳米图形的方法. CN: CN103311097A, 2013-09-18.
[58] 张连, 张韵, 程哲. HEMT器件及其制作方法. US: CN104412388A, 2015-03-11.
[59] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 一种金属纳米圆环的制备方法. CN: CN103268910A, 2013-08-28.
[60] 张连, 张韵, 程哲. HEMT器件及其制作方法. 202010846206.1, 2020-08-20.
[61] 程哲, 张韵. 低寄生氮化镓基反相器及其制备方法. 202410338479.3, 2024-03-22.
[62] 张韵, 谢树杰, 刘喆, 张连, 何佳恒, 程哲. 具有欧姆接触界面钝化层的GaN HEMT器件及其制备方法. 202410070130.6, 2024-01-17.
[63] 张韵, 杨杰, 刘喆. 微型发光二极管. 202322548123.6, 2023-09-19.
[64] 张韵, 杨杰, 刘喆. 微型发光二极管及其制作方法. 202311212675.8, 2023-09-19.

   

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（1） 中国新材料热点领域产业发展战略, 科学技术文献出版社, 2015-05, 第 3 作者

   

（ 1 ） 5G/6G高性能射频器件研究, 负责人, 中国科学院计划, 2022-07--2027-07
（ 2 ） GaN基毫米波HEMT关键工艺与集成, 负责人, 境内委托项目, 2022-04--2023-03
（ 3 ） 氮化镓基高空穴迁移率晶体管材料与器件研究, 负责人, 国家任务, 2019-01--2019-12
（ 4 ） 太赫兹微系统基础问题, 负责人, 国家任务, 2018-01--2021-11
（ 5 ） 用于中等功率通用电源的高效率GaN基电力电子技术, 负责人, 国家任务, 2017-07--2020-12
（ 6 ） 深紫外LED材料与芯片自主研制, 负责人, 地方任务, 2016-01--2017-12
（ 7 ） 高铝组分氮化物材料制备技术研究, 负责人, 国家任务, 2014-01--2016-12
（ 8 ） GaN基HBT射频性能提升的研究, 负责人, 国家任务, 2014-01--2017-12
（ 9 ） 高效GaN基绿光LED研究, 参与, 国家任务, 2014-01--2017-12
（ 10 ） AlGaN基紫外激光二极管研究, 参与, 国家任务, 2014-01--2017-12
（ 11 ） ****青年项目, 负责人, 国家任务, 2012-04--2015-03

（1）AlGaN-based ultraviolet light-emitting diodes on high-temperature annealed sputtered AlN on sapphire   2018-11-11
（2）Ultra-high-power characteristics of GaN/InGaN heterojunction bipolar transistors   3. Yi-Che Lee, Yun Zhang, Zachary M. Lochner, Hee Jin Kim, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen   2011-07-15
（3）Low-knee-voltage GaN/InGaN heterojunction bipolar transistors with collector current density 20 kA/cm2   5. Yun Zhang, Yi-Che Lee, Zachary Lochner, Hee Jin Kim, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen   2011-05-17
（4）Direct-growth GaN/InGaN double heterojunction bipolar transistors on sapphire substrates with current gain 100 and JC 7.2 kA/cm2 and power density 240 kW/cm2   Yun Zhang, Yi-Che Lee, Zachary Lochner, Hee Jin Kim, Suk Choi, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen   2010-09-21
（5）A surface treatment technique for III-N device fabrication   Y. Zhang, M. Britt, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen   2008-04-15
（6）GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates   Y. Zhang, D. Yoo, J.-B. Limb, J. H. Ryou, R. D. Dupuis, and S.-C. Shen   2007-09-24

已指导学生

赵璐  硕士研究生  080903-微电子学与固体电子学  

封琼  硕士研究生  080903-微电子学与固体电子学  

倪茹雪  博士研究生  080903-微电子学与固体电子学  

杨秀霞  博士研究生  080903-微电子学与固体电子学  

王琳  硕士研究生  080903-微电子学与固体电子学  

崔冰玥  博士研究生  080903-微电子学与固体电子学  

王学友  博士研究生  080903-微电子学与固体电子学  

何亚伟  博士研究生  080903-微电子学与固体电子学  

王欣远  硕士研究生  080903-微电子学与固体电子学  

王然然  硕士研究生  080903-微电子学与固体电子学  

高幸发  博士研究生  080903-微电子学与固体电子学  

范建  博士研究生  080903-微电子学与固体电子学  

现指导学生

叶蕾  博士研究生  080903-微电子学与固体电子学  

米长鑫  硕士研究生  080903-微电子学与固体电子学  

何佳恒  博士研究生  080903-微电子学与固体电子学  

易博阳  硕士研究生  080903-微电子学与固体电子学  

程哲  博士研究生  080903-微电子学与固体电子学  

谢树杰  博士研究生  080903-微电子学与固体电子学