080501-材料物理与化学
080901-物理电子学

宽带隙半导体材料与器件

1995-09--1999-01   中国科学院半导体研究所   博士学位
1989-09--1992-08   中国科学院固体物理研究所   硕士学位
1982-09--1986-06   湖北大学物理系   学士学位

博士研究生

工学博士

   

2013-05~现在, 中国科学院半导体所半导体材料科学重点实验室, 研究员
2011-09~2013-04,中国科学院半导体研究所照明研发中心, 研究员
2006-10~2011-08,华中科技大学武汉光电国家实验室(筹), 教授
1999-10~2006-10,Institute of Materials Research and Engeering, Research Scientist
1998-08~1999-08,香港理工大学电子资讯工程系, 访问学者
1992-09~1995-08,武汉工业大学材料研究与测试中心, 助理研究员
1986-07~1989-08,武汉市新洲技工学校, 助理讲师

2013-07-01-今,《光学学报》论文评审人,
2012-01-01-今,IEEE Photonics Technology Letters论文评审人,
2012-01-01-今,ECS Journal of Solid-State Science and Technology论文评审人,
2010-01-01-今,ECS Solid State Letters论文评审人,
2007-10-01-今,广东省科技咨询专家, 项目评审专家
2005-06-01-今,Applied Physics Letters论文评审人,

《半导体照明技术导论》
《半导体制造技术》
《半导体照明基础》

   

（ 1 ） AlN基板高效散热HEMT器件及其制备方法, 发明专利, 2019, 第 1 作者, 专利号: 201710671295.9

（ 2 ） 一种HEMT外延结构及制备方法, 发明专利, 2019, 第 2 作者, 专利号: 201610753069.0

（ 3 ） 一种非极性面量子点发光二极管及其制备方法, 发明专利, 2019, 第 2 作者, 专利号: 201710429863.4

（ 4 ） 一种高反射率的垂直结构发光二极管芯片及其制备方法, 发明专利, 2018, 第 2 作者, 专利号: 201410641928.8

（ 5 ） 半极性面氮化镓基发光二极管及其制备方法, 发明专利, 2016, 第 2 作者, 专利号: 201410147977.6

（ 6 ） 利用硅衬底制备垂直结构氮化镓基发光二极管器件的方法, 发明专利, 2016, 第 5 作者, 专利号: 201310652125.8

（ 7 ） 一种LED防爆灯, 实用新型, 2013, 第 1 作者, 专利号: 201220105127.6

（ 8 ） 一种GaN基多量子阱结构的外延片压电场的测量系统, 实用新型, 2012, 第 1 作者, 专利号: 201220092553.0

（ 9 ） 太阳能电池, 发明专利, 2011, 第 1 作者, 专利号: ZL201010168797.8

（ 10 ） 硅基单结氮化镓铟太阳能电池, 实用新型, 2011, 第 1 作者, 专利号: ZL201020184791.5

（ 11 ） 纳米图案p型氮化物半导体欧姆接触电极及其制备方法, 发明专利, 2010, 第 1 作者, 专利号: ZL200810196819.4

（ 12 ） 面发射多色发光二极管及其制造方法, 发明专利, 2010, 第 1 作者, 专利号: ZL200810236865.2

（ 13 ） 面发射多色发光二极管, 实用新型, 2009, 第 1 作者, 专利号: ZL200820230327.8

   

[1] 林兰英. 氮化镓缓冲层的物理性质. 半导体学报[J]. [[[1999]]], [[[16]]]([[[8]]]): 633-, VIP_JournalArticle.
[2] 林兰英. 高纯氮化镓外延材料的制备. 高技术通讯[J]. [[[1998]]], [[[8]]]([[[8]]]): [[[35]]]-[[[37]]], VIP_JournalArticle.
[3] Wenlong Li, Lianshan Wang,, Ruohao Chai, Ling Wen, Haixia Lu, Huanhua Wang, Shaoyan Yang, Wenhong Sun. The influence of high-temperature nitridation process on the crystalline quality of semipolar (11-22) GaN epitaxial film. Current Appl. Physics[J]. 2022, 39: 38-44, https://doi.org/10.1016/j.cap.2022.03.020.
[4] Ruohao Chai, Lianshan Wang, Ling Wen, Wenlong Li, Shuping Zhang, Wenwang Wei, Wenhong Sun, Shaoyan Yang. Raman spectra of semi-polar (11-22) InGaN thick film. Vibrational Spectroscopy[J]. 2022, 119: 103357－1-103357－6, https://doi.org/10.1016/j.vibspec.2022.103357.
[5] Wenlong Li, Lianshan Wang, Ruohao Chai, Ling Wen, Zhen Wang, Wangguo Guo, Huanhua Wang, Shaoyan Yang. Anisotropic Strain Relaxation in Semipolar (11-22) InGaN/GaN Superlattice Relaxed Template. Nanomaterials[J]. 2022, 12: 03007－1-03007－11, https:// doi.org/10.3390/nano12173007.
[6] 牛慧丹, 孔苏苏, 杨少延, 刘祥林, 魏鸿源, 姚威振, 李辉杰, 陈庆庆, 汪连山, 王占国. 温度对氮化铝表面形貌的调控及演化机理. 发光学报[J]. 2021, 42(11): 1739-1747, http://lib.cqvip.com/Qikan/Article/Detail?id=7105985629.
[7] Wen, Ling, Wang, Lianshan, Chai, Ruohao, Li, Wenlong, Yang, Shaoyan. Wet etching of semi-polar (11-22) GaN on m-sapphire by different methods. JOURNAL OF CRYSTAL GROWTH[J]. 2021, 570: http://dx.doi.org/10.1016/j.jcrysgro.2021.126200.
[8] Yao, Weizhen, Wang, Lianshan, Meng, Yulin, Yang, Shaoyan, Liu, Xianglin, Niu, Huidan, Wang, Zhanguo. Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes. CRYSTENGCOMM[J]. 2021, 23(12): 2360-2366, http://dx.doi.org/10.1039/d0ce01769h.
[9] Yao, Weizhen, Li, Fangzheng, Wang, Lianshan, Liu, Sheng, Wei, Hongyuan, Yang, Shaoyan, Wang, Zhanguo. Investigation of coherency stress-induced phase separation in AlN/AlxGa1-xN superlattices grown on sapphire substrates. CRYSTENGCOMM[J]. 2020, 22(18): 3198-3205, https://www.webofscience.com/wos/woscc/full-record/WOS:000536772800014.
[10] Li, Fangzheng, Wang, Lianshan, Yao, Weizhen, Meng, Yulin, Yang, Shaoyan, Wang, Zhanguo. Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition. SUPERLATTICES AND MICROSTRUCTURES[J]. 2020, 137: http://dx.doi.org/10.1016/j.spmi.2019.106336.
[11] Hu Jun, Wei Hongyuan, Yang Shaoyan, Li Chengming, Li Huijie, Liu Xianglin, Wang Lianshan, Wang Zhanguo. Hydride vapor phase epitaxy for gallium nitride substrate. JOURNAL OF SEMICONDUCTORS[J]. 2019, 40(10): http://lib.cqvip.com/Qikan/Article/Detail?id=7003038429.
[12] Yao, Weizhen, Wang, Lianshan, Li, Fangzheng, Meng, Yulin, Yang, Shaoyan, Wang, Zhanguo. Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2019, 34(12): [13] Yao, Weizhen, Wang, Lianshan, Li, Fangzheng, Meng, Yulin, Yang, Shaoyan, Wang, Zhanguo. Impact of Cone-Shape-Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p-GaN via MOCVD. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2019, 216(14): http://dx.doi.org/10.1002/pssa.201900026.
[14] Meng, Yulin, Wang, Lianshan, Li, Fangzheng, Zhao, Guijuan, Yao, Weizhen, Yang, Shaoyan, Wang, Zhanguo. Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures. MATERIALS RESEARCH EXPRESS[J]. 2019, 6(8): [15] Zhao, Guijuan, Wang, Lianshan, Li, Huijie, Meng, Yulin, Li, Fangzheng, Yang, Shaoyan, Wang, Zhanguo. Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure. APPLIED PHYSICS LETTERS[J]. 2018, 112(5): [16] Li, Fangzheng, Wang, Lianshan, Zhao, Guijuan, Meng, Yulin, Li, Huijie, Chen, Yanan, Yang, Shaoyan, Jin, Peng, Wang, Zhanguo. The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 18(11): 7484-7488, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600026.
[17] Meng, Yulin, Wang, Lianshan, Zhao, Guijuan, Li, Fangzheng, Li, Huijie, Yang, Shaoyan, Wang, Zhanguo. Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures with Indium-Rich Clusters. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2018, 215(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000452297400006.
[18] Zhao, Guijuan, Li, Huijie, Wang, Lianshan, Meng, Yulin, Li, Fangzheng, Wei, Hongyuan, Yang, Shaoyan, Wang, Zhanguo. Measurement of semi-polar (11-22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2018, 124(2): [19] Wang Lianshan. Comparative investigation of semiploar (11-22) GaN layers on m plane sapphire with different nucleation layers. Journal of Nanoscience and Nanotechnology,18,7446 (2018). 2018, [20] Li, Fangzheng, Wang, Lianshan, Zhao, Guijuan, Meng, Yulin, Li, Huijie, Yang, Shaoyan, Wang, Zhanguo. Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer. SUPERLATTICES AND MICROSTRUCTURES[J]. 2017, 110: 324-329, http://dx.doi.org/10.1016/j.spmi.2017.08.009.
[21] Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang. Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping. SCIENTIFIC REPORTS[J]. 2017, 7(1): http://ir.semi.ac.cn/handle/172111/28311.
[22] Ji, Zesheng, Wang, Lianshan, Zhao, Guijuan, Meng, Yulin, Li, Fangzheng, Li, Huijie, Yang, Shaoyan, Wang, Zhanguo. Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition. CHINESE PHYSICS B[J]. 2017, 26(7): http://ir.semi.ac.cn/handle/172111/28309.
[23] Huijie Li, Guijuan Zhao, Hongyuan Wei, Lianshan Wang, Zhen Chen, Shaoyan Yang. Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates. Nanoscale res lett[J]. 2016, 11(1): 270-, http://ir.semi.ac.cn/handle/172111/27760.
[24] Li, Huijie, Zhao, Guijuan, Wang, Lianshan, Chen, Zhen, Yang, Shaoyan. Morphology Controlled Fabrication of InN Nanowires on Brass Substrates. NANOMATERIALS[J]. 2016, 6(11): http://ir.semi.ac.cn/handle/172111/27759.
[25] Zhao, Guijuan, Xu, Xiaoqing, Li, Huijie, Wei, Hongyuan, Han, Dongyue, Ji, Zesheng, Meng, Yulin, Wang, Lianshan, Yang, Shaoyan. The immiscibility of InAlN ternary alloy. SCIENTIFIC REPORTS[J]. 2016, 6: http://ir.semi.ac.cn/handle/172111/27766.
[26] Li, Huijie, Zhao, Guijuan, Wei, Hongyuan, Wang, Lianshan, Chen, Zhen, Yang, Shaoyan. Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates. NANOSCALE RESEARCH LETTERS[J]. 2016, 11(1): http://dx.doi.org/10.1186/s11671-016-1482-x.
[27] Zhao, Guijuan, Wang, Lianshan, Yang, Shaoyan, Li, Huijie, Wei, Hongyuan, Han, Dongyue, Wang, Zhanguo. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers. SCIENTIFIC REPORTS[J]. 2016, 6: http://ir.semi.ac.cn/handle/172111/27765.
[28] Wang Lianshan. the Effect of the thickness of InGaN interlayer on the a-plane GaN epilayers. Chin. Phys. B24(2), 02680 (2015). 2015, [29] Huijie Li, Guipeng Liu, Guijuan Zhao, Hongyuan Wei, Lianshan Wang, Shaoyan Yang, Zhen Chen, Zhanguo Wang. Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures. Physica e: low-dimensional systems and nanostructures[J]. 2015, 66: 116-119, http://ir.semi.ac.cn/handle/172111/26864.
[30] Huijie Li, Guijuan Zhao, Susu Kong, Dongyue Han, Hongyuan Wei, Lianshan Wang, Zhen Chen, Shaoyan Yang. Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned. Nanoscale[J]. 2015, 7(39): 16481-16492, http://ir.semi.ac.cn/handle/172111/26863.
[31] Jin, DongDong, Wang, Lianshan, Yang, ShaoYan, Zhang, LiuWan, Li, Huijie, Zhang, Heng, Wang, Jianxia, Xiang, Ruofei, Wei, Hongyuan, Jiao, Chunmei, Liu, XiangLin, Zhu, QinSheng, Wang, ZhanGuo. Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. JOURNAL OF APPLIED PHYSICS[J]. 2014, 115(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000331210800049.
[32] Wang JianXia, Wang LianShan, Yang ShaoYan, Li HuiJie, Zhao GuiJuan, Zhang Heng, Wei HongYuan, Jiao ChunMei, Zhu QinSheng, Wang ZhanGuo. Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer. CHINESE PHYSICS B[J]. 2014, 23(2): http://ir.semi.ac.cn/handle/172111/26053.
[33] Kong, Susu, Wei, Hongyuan, Yang, Shaoyan, Li, Huijie, Feng, Yuxia, Chen, Zhen, Liu, Xianglin, Wang, Lianshan, Wang, Zhanguo. Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy. RSC ADVANCES[J]. 2014, 4(97): 54902-54906, http://dx.doi.org/10.1039/c4ra09590a.
[34] Li, Huijie, Liu, Changbo, Liu, Guipeng, Wei, Hongyuan, Jiao, Chunmei, Wang, Jianxia, Zhang, Heng, Jin, Dong Dong, Feng, Yuxia, Yang, Shaoyan, Wang, Lianshan, Zhu, Qinsheng, Wang, ZhanGuo. Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates. JOURNAL OF CRYSTAL GROWTH[J]. 2014, 389: 1-4, http://dx.doi.org/10.1016/j.jcrysgro.2013.11.066.
[35] Li, Huijie, Liu, Guipeng, Wei, Hongyuan, Jiao, Chunmei, Wang, Jianxia, Zhang, Heng, Jin, Dong Dong, Feng, Yuxia, Yang, Shaoyan, Wang, Lianshan, Zhu, Qinsheng, Wang, ZhanGuo. Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors. APPLIED PHYSICS LETTERS[J]. 2013, 103(23): http://ir.semi.ac.cn/handle/172111/24505.
[36] Bak, S J, Mun, D H, Jung, K C, Park, J H, Bae, H J, Lee, I W, Ha, J S, Jeong, T, Oh, T S. Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD. ELECTRONIC MATERIALS LETTERS[J]. 2013, 9(3): 367-370, https://www.webofscience.com/wos/woscc/full-record/WOS:000319038700020.
[37] Wang Lianshan. Structure of interlayer on Si(111) substrate effect on GaN film. IEEE Proceedings of the fourth international Symposium on Photonics and Optoelectronics, P615-617, May 21-23, 2012, Shanghai. 2012, [38] Wang Lianshan. InGaN multiple quantum well blue LED grown on patterned sapphire substrates. IEEE Proceedings of the 3rd international Symposium on Photonics and Optoelectronics, P729-731，May 16-18, 2011, Wuhan. 2011, [39] Wang Lianshan. Shallow-deep InGaN multiple quantum well system for dual-wavelength emission grown on semi-polar (112-22) facet GaN. J. Electronic Materials 40, 1572 (2011). 2011, [40] Dai, Kehui, Soh, Chew Beng, Chua, Soo Jin, Wang, Lianshan, Huang, Dexiu. Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes. JOURNAL OF APPLIED PHYSICS[J]. 2011, 109(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000290047000011.
[41] 戴科辉, 汪连山, 黄德修, 苏周明, 蔡树仁. Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes. CHINESE PHYSICS LETTERS[J]. 2011, 28(9): 263-266, https://www.webofscience.com/wos/woscc/full-record/WOS:000294778700071.
[42] Wang Lianshan. Optical Properties of InGaN Multiple Quantum Well Structures Grown on (112-2) Facet GaN/sapphire Templates. 2011, [43] Wang Lianshan. Structural and Optical Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown on (11-22) Facet GaN/sapphire Templates by Metalorganic Chemical Vapor Deposition. Proc. of SPIE Vol. 8123 81230C (2011). 2011, [44] Wang Lianshan. Epitaxial growth and characterization of two- and three-wavelengths InGaN multiple quantum well structures grown on semi-polar (11-22) facet GaN. The 16th International Conference on Crystal Growth, and the 14th International Conference on Vapor Growth and Epitaxy, 8-13 August, 2010, Beijing, China. 2010, [45] Yan, Han, Gan, Zhiyin, Wang, Lianshan, Song, Xiaohui, Liu, Sheng. Initial Growth of AlInGaN on Polar Gallium Nitride Substrates under Biaxial Strain: First-principle Simulations. INTERNATIONAL JOURNAL OF NONLINEAR SCIENCES AND NUMERICAL SIMULATION[J]. 2010, 11(7): 529-533, https://www.webofscience.com/wos/woscc/full-record/WOS:000283612400008.
[46] Wang Lianshan. Effect of annealing temperature of zno seeds on the synthesis of Zno nanorod arrays on GaN/Al2O3 substrates. Proceedings of the ASME 2010 International Mechanical Engineering Congres and Exposition (IMECE2010), November 12-18, 2010, Vancouver, British Columbia, Canada. 2010, [47] Wang Lianshan. InGaN/GaN multi-quantum-well structures and GaN micromechanical structures on silicon-on-insulator substrates. Proc. SPIE Vol. 7279, 72790U (2009). 2009, [48] Soh, C B, Zang, K Y, Wang, L S, Chow, S Y, Chua, S J. Deep levels associated with dislocation annihilation by Al pre-seeding and silicon delta doping in GaN grown on Si(111) substrates. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2008, 205(2): 266-270, https://www.webofscience.com/wos/woscc/full-record/WOS:000253551000008.
[49] Wang Lianshan. GaN and ZnO freestanding micromechanical structures on SOI substrates. Physica Status Solidi (a), 205，1168-1172 (2008). 2008, [50] Wang Lianshan. Nanopatterning and selective area epitaxy of GaN on Si substrate. Proc. SPIE Vol. 6894-9, (2008). 2008, [51] Wu, Z H, Fischer, A M, Ponce, F A, Yokogawa, T, Yoshida, S, Kato, R. Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire. APPLIED PHYSICS LETTERS[J]. 2008, 93(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000258184600016.
[52] Vicknesh, S, Tripathy, S, Lin, Vivian K X, Wang, L S, Chua, S J. Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms. APPLIED PHYSICS LETTERS[J]. 2007, 90(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000244249800020.
[53] Zang, K Y, Wang, Y D, Wang, L S, Tripathy, S, Chua, S J, Thompson, C V. Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface. THIN SOLID FILMS[J]. 2007, 515(10): 4505-4508, http://dx.doi.org/10.1016/j.tsf.2006.07.146.
[54] Zhou, Hailong, Chua, S J, Zang, Keyan, Wang, L S, Tripathy, S, Yakovlev, N, Thomas, Osipowicz. InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization. JOURNAL OF CRYSTAL GROWTH[J]. 2007, 298: 511-514, http://dx.doi.org/10.1016/j.jcrysgro.2006.10.067.
[55] Zang, K Y, Wang, Y D, Wang, L S, Chow, S Y, Chua, S J. Defect reduction by periodic SiNx interlayers in gallium nitride grown on Si (111). JOURNAL OF APPLIED PHYSICS[J]. 2007, 101(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000246567900016.
[56] Wang Lianshan. Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN template. Journal of Physics: Condensed Matter 19, 356203 (2007). 2007, [57] Zhou, H L, Chua, S J, Tripathy, S, Yakovlev, N L, Wang, L S, Liu, W. AlGaN/GaN multiple quantum wells grown on facet-controlled epitaxial lateral overgrown GaN/sapphire templates. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2007, 19(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000243792200007.
[58] Wang Lianshan. Structural properties of ZnO Grown on GaN/sapphire templates: the transition from nanorods to thin films. Electrochemical and Solid-State Letters, 10(3), H98-H100 (2007). 2007, [59] Wang, L S, Tripathy, S, Wang, B Z, Teng, J H, Chow, S Y, Chua, S J. Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates. APPLIED PHYSICS LETTERS[J]. 2006, 89(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000238849200015.
[60] Wang, L S, Tripathy, S, Wang, B Z, S J Chua. GaN epilayers on nanopatterned GaN/Si(111) templates: Structural and optical characterization. APPLIED SURFACE SCIENCE[J]. 2006, 253(1): 214-218, http://dx.doi.org/10.1016/j.apsusc.2006.05.107.
[61] Vajpeyi, AP, Tripathy, S, Shannigrahi, SR, Foo, BC, Wang, LS, Chua, SJ, Alves, E. Influence of rapid thermal annealing on the luminescence properties of nanoporous GaN films. ELECTROCHEMICAL AND SOLID STATE LETTERS[J]. 2006, 9(4): G150-G154, https://www.webofscience.com/wos/woscc/full-record/WOS:000235479800030.
[62] Wang Lianshan. Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapour deposition. 2006, [63] Zang, KY, Wang, YD, Chua, SJ, Wang, LS, Tripathy, S, Thompson, CV. Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111). APPLIED PHYSICS LETTERS[J]. 2006, 88(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000236612000040.
[64] Vajpeyi, A P, Tripathy, S, Wang, L S, Foo, B C, Chua, S J, Fitzgerald, E A, Alves, E. Optical activation of Eu ions in nanoporous GaN films. JOURNAL OF APPLIED PHYSICS[J]. 2006, 99(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000237943800041.
[65] Tripathy, S, Wang, L S, Chua, S J. Characterization of GaN layers grown on silicon-on-insulator substrates. APPLIED SURFACE SCIENCE[J]. 2006, 253(1): 236-240, http://dx.doi.org/10.1016/j.apsusc.2006.05.090.
[66] Zhang, X H, Chua, S J, Liu, W, Wang, L S, Yong, A M, Chow, S Y. Crack-free fully epitaxial nitride microcavity with AlGaN/GaN distributed Bragg reflectors and InGaN/GaN quantum wells. APPLIED PHYSICS LETTERS[J]. 2006, 88(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000237477400011.
[67] Wang Lianshan. Growth and characterization of GaN on silicon-on-insulator substrates. 11th European Workshop on MOVPE, June 5-8, 2005, Lausanne, Switzerland. 2005, [68] Wang Lianshan. Effect of periodic silicon delta doping on the microstructural and optical properties of GaN films grown on Si (111) substrates. 11th European Workshop on MOVPE, June 5-8, 2005, Lausanne, Switzerland, P387-389 (H04). 2005, [69] Vajpeyi, AP, Chua, SJ, Tripathy, S, Fitzgerald, EA, Liu, W, Chen, P, Wang, LS. High optical quality nanoporous GaN prepared by photoelectrochemical etching. ELECTROCHEMICAL AND SOLID STATE LETTERS[J]. 2005, 8(4): G85-G88, [70] Wang Lianshan. Comparative investigation of MOCVD-grown GaN thin films on Si with and without periodic Si-delta dopings. 6th international conference on nitride semiconductors (ICNS-6) (Bremen, Germany) August 28 - September 2, 2005. 2005, [71] Shah, MA, Vicknesh, S, Wang, LS, Arokiaraj, J, Ramam, A, Chua, SJ, Tripathy, S. Fabrication of freestanding GaN micromechanical structures on silicon-on-insulator substrates. ELECTROCHEMICAL AND SOLID STATE LETTERS[J]. 2005, 8(10): G275-G279, [72] Wang Lianshan. Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon. Physica Status Solidi (c), 2, 2559-2263 (2005). 2005, [73] Zang, KY, Wang, YD, Chua, SJ, Wang, LS. Nanoscale lateral epitaxial overgrowth of GaN on Si(111). APPLIED PHYSICS LETTERS[J]. 2005, 87(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000233058800059.
[74] Wang Lianshan. The effect of periodic silane burst on the properties of GaN on Si (111) substrates. Mat. Res. Soc. Symp. Proc. Vol. 831, E3.33.1 (2005). 2005, [75] Wang, LS, Tripathy, S, Chua, SJ, Zang, KY. InGaN/GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates. APPLIED PHYSICS LETTERS[J]. 2005, 87(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000231802200017.
[76] Wang, LS, Tripathy, S, Sun, WH, Chua, SJ. Micro-raman spectroscopy of Si-, C-, Mg- and Be-implanted GaN layers. JOURNAL OF RAMAN SPECTROSCOPY[J]. 2004, 35(1): 73-77, https://www.webofscience.com/wos/woscc/full-record/WOS:000188380800012.
[77] K.Y Zang, L.S Wang, S.J Chua, C.V Thompson. Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1). Journal of Crystal Growth. 2004, 268(3): 515-520, http://dx.doi.org/10.1016/j.jcrysgro.2004.04.083.
[78] Wang, LS, Zang, KY, Tripathy, S, Chua, SJ. Effects of periodic delta-doping on the properties of GaN : Si films grown on Si(111) substrates. APPLIED PHYSICS LETTERS[J]. 2004, 85(24): 5881-5883, https://www.webofscience.com/wos/woscc/full-record/WOS:000225620200022.
[79] Wang Lianshan. Growth of crack-free GaN on AlN quantum dots on Si (111) substrates by MOCVD. Mat. Res. Soc. Symp. Proc. Vol.798, Y10.36.1-6 (2004). 2004, [80] L.S. Wang, W.H. Sun, S.J. Chua, Mark Johnson. RETRACTED: Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells. Materials Science & Engineering B. 2003, 97(2): 196-199, http://dx.doi.org/10.1016/S0921-5107(02)00572-X.
[81] Wang Lianshan. InGaN self-organized quantum dots grown by metalorganic chemical vapor deposition (MOCVD). Physica Status Solidi (c), Vol. 0, No. 7, 2082 (2003). 2003, [82] Zang KY, Chua SJ, Wang LS, Thompson CV, Stutzmann M. Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGSnull. 2003, 2067-2071, [83] Li, BJ, Chua, SJ, Nikolai, Y, Wang, LS, Sia, EK. Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing. SOLID-STATE ELECTRONICS[J]. 2003, 47(4): 601-605, http://dx.doi.org/10.1016/S0038-1101(02)00322-2.
[84] Tripathy, S, Chua, SJ, Hao, MS, Sia, EK, Ramam, A, Zhang, J, Sun, WH, Wang, LS. Micro-Raman scattering in laterally epitaxial overgrown GaN. JOURNAL OF APPLIED PHYSICS[J]. 2002, 91(9): 5840-5852, https://www.webofscience.com/wos/woscc/full-record/WOS:000175069000046.
[85] Wang Lianshan. Raman scattering spectra in Be-implanted GaN epilayers. Mat. Res. Soc. Symp. Proc. Vol. 719, F6.28.1-4 (2002). 2002, [86] Wang Lianshan. Improvements of structural and optical properties of GaN/Al0.10Ga0.90N multi-quantum wells by isoelectronic In-dopin. Mat. Res. Soc. Symp. Proc. Vol. 693, I6.6.1-6 (2002). 2002, [87] Sun, WH, Chua, SJ, Wang, LS, Zhang, XH. Outgoing multiphonon resonant raman scattering and luminescence in Be- and C-implanted GaN. JOURNAL OF APPLIED PHYSICS[J]. 2002, 91(8): 4917-4921, https://www.webofscience.com/wos/woscc/full-record/WOS:000174666600021.
[88] Wang Lianshan. Raman scattering and photoluminescence of implanted Mg GaN film. The fourth international conference on nitride semiconductors (ICNS4), P11.2, Denver Colorado, USA, 17-19 July 2001. 2001, [89] Wang Lianshan. Local vibration modes in gamma-irradiated GaN grown by metal-organic chemical vapour deposition. Materials Science in Semiconductor Processing, 4 (6), 559-562 (2001). 2001, [90] Sun, WH, Chua, SJ, Wang, LS, Zhang, XH, Hao, MS. Outgoing multiphonon resonant Raman scattering in Be- and C-implanted GaN. PHYSICA STATUS SOLIDI B-BASIC RESEARCH[J]. 2001, 228(1): 341-344, https://www.webofscience.com/wos/woscc/full-record/WOS:000172513100073.
[91] Hao, M, Chua, SJ, Zhang, XH, Wang, W, Sia, EK, Wang, LS, Raman, A, Li, P, Liu, W. Electron-hole plasma emission from In0.3Ga0.7N/GaN multiple quantum wells. PHYSICAL REVIEW B[J]. 2001, 63(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000167806600015.
[92] Wang Lianshan. Raman scattering spectra in C-implanted GaN epilayers. Mat. Res. Soc. Symp. Proc. Vol. 680, E9.8.1-6 (2001). 2001, [93] Wang, LS, Fong, WK, Surya, C, Cheah, KW, Zheng, WH, Wang, ZG. Photoluminescence of rapid-thermal annealed Mg-doped GaN films. SOLID-STATE ELECTRONICS[J]. 2001, 45(7): 1153-1157, http://dx.doi.org/10.1016/S0038-1101(01)00043-0.
[94] Sundaravel, B, Luo, EZ, Xu, JB, Wilson, IH, Fong, WK, Wang, LS, Surya, C. Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001). JOURNAL OF APPLIED PHYSICS[J]. 2000, 87(2): 955-957, https://www.webofscience.com/wos/woscc/full-record/WOS:000084506500053.
[95] Wang Lianshan. Growth and characterisation of high quality GaN film by epitaxial lateral over-growth. Proceedings of the international workshop on advances in materials science and technology, P146, 3-6 April 2000, Singapore. 2000, [96] 汪连山. n型氮化镓的持续光电导. 1999, [97] 汪连山, 陆大成, 王晓晖, 岳国珍, 刘祥林, 汪度, 王占国. N型GaN的持续光电导. 半导体学报[J]. 1999, 20(5): 371-377, http://lib.cqvip.com/Qikan/Article/Detail?id=3611628.
[98] 汪连山. 掺Si氮化镓材料的生长及其性质. 《半导体学报》，第 20 卷， 534页， (1999年). 1999, [99] 汪连山. 氮化镓缓冲层微观生长过程分析. 《材料科学与技术》，第 15 卷, 529-533 页， (1999年). 1999, [100] Wang Lianshan. The Dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor phase epitaxy (MOVPE). J. Crystal Growth 193, 23-27 (1998). 1998, [101] 昝育德, 汪连山, 汪度, 王占国, 王俊, 陆大成, 刘祥林. Al_2O_3/Si（001）衬底上GaN外延薄膜的制备. 中国科学. E辑，技术科学[J]. 1998, 28(1): 32-, http://lib.cqvip.com/Qikan/Article/Detail?id=2974993.
[102] Wang Lianshan. The gtrowth and characterization of GaN grown on an Al2O3 coated (001) Si substrate by metalorganic vapor phase epitaxy (MOVPE). J. Crystal Growth 193, 484-490 (1998). 1998, [103] 汪连山. 高纯GaN薄膜的生长. 《粉末冶金技术》第 16 卷, 35页 (1998年). 1998, [104] Wang Lianshan. Fabrication of GaN on Al2O3/Si Substrate. Sciences in China (series E), Vol. 41, No. 2, 203, (1998). 1998, [105] Wang LS, Yue GZ, Liu XL, Wang XH, Wang CX, Wang D, Lu DC, Wang ZG. Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD. Blue laser and light emitting diodes iinull. 1998, 560-563, http://ir.semi.ac.cn/handle/172111/13807.
[106] Wang Lianshan. The Influence of Thickness on Properties of GaN Buffer Layer and Heavily Si- Doped GaN Grown by Metalorganic Vapor Phase Epitaxy (MOVPE). 1998, [107] 汪连山. Al2O3/Si（001）衬底上氮化镓外延薄膜的制备. 《中国科学》，(E，技术辑)，第28 卷，第1 期，第32页，(1998年). 1998, [108] Wang Lianshan. The growth and characterization of GaN grown on a gamma-Al2O3/Si (001) substrate by MOVPE. Proceedings of 2nd international symposium on blue laser and light emitting diodes, p.93, Kazusa Akademia Center, Chiba, Japan, 29 Sept. – 2 Oct. 1998. 1998, [109] Wang Lianshan. Analysis on the chemical reaction process of GaN buffer layer growth. 1998, [110] Wang, LS, Liu, XL, Zan, YD, Wang, J, Wang, D, Lu, DC, Wang, ZG. Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer. APPLIED PHYSICS LETTERS[J]. 1998, 72(1): 109-111, http://ir.semi.ac.cn/handle/172111/13298.
[111] 汪连山, 刘祥林. Al2O3／Si（001）衬底上GaN外延薄膜的制备. 中国科学：E辑[J]. 1998, 28(1): 32-36, http://lib.cqvip.com/Qikan/Article/Detail?id=2974993.
[112] 汪连山. GaN在gamma-Al2O3/Si（001）衬底上的外延生长. 1997年砷化镓及有关化合物会议论文集，第101页，湖南张家界，1997年11月. 1997, [113] 汪连山. MOVPE生长参数对氮化镓缓冲层生长速率的影响. 1997年砷化镓及有关化合物会议论文集，第98 页，湖南张家界，1997年11月. 1997, [114] 汪连山. 缓冲层生长温度对MOVPE生长GaN的影响. 1997, [115] 汪连山. P型GaN的LP-MOVPE生长. 第五届全国MOCVD学术会议文集，第92页，河北承德，1997年8月. 1997, [116] Wang Lianshan. The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by MOVPE. The international conference on nitride semiconductors (ICNS 97), P 328, Japan, 2-7 Nov. 1997. 1997, [117] 汪连山. MOCVD法硅上外延生长gamma-Al2O3. 第五届全国固体薄膜会议文集 ，第248 页，浙江奉化 ，1996年10月. 1996, [118] 王世敏, 赵建洪, 吴新民, 马世安, 李兴教, 顾豪爽, 汪连山, 邝安祥. 溶胶—凝胶法制备高取向Bi4Ti3O12／SrTiO3（100）薄膜. 物理化学学报[J]. 1996, 12(1): 63-, http://lib.cqvip.com/Qikan/Article/Detail?id=2006635.
[119] Wang Lianshan. Synthesis and ferroelctric properties of c-axis oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon. Appl. Phys. Lett. 68, 1209 (1996). 1996, [120] 汪连山, 洪汉烈, 李宗全. Microstructure and Transformation on Platinum (111) Facets. 稀有金属：英文版[J]. 1996, 45-50, http://lib.cqvip.com/Qikan/Article/Detail?id=1004762884.
[121] 汪连山. GaAs （100） 解理面的反射电子显微术观察. 1994, [122] WANG, LS, LI, ZQ. REFLECTION ELECTRON-MICROSCOPY OBSERVATION OF CLEAVED GAAS(110) SURFACE. CHINESE SCIENCE BULLETIN[J]. 1994, 39(19): 1598-1601, https://www.webofscience.com/wos/woscc/full-record/WOS:A1994PN65300004.
[123] 汪连山. Pt（111） 小面的反射电子显微分析方法. 《理化检验》（物理分册），第30 卷，第3 期，第36 页 (1994年). 1994, [124] 汪连山. 普通透射电镜的反射电子显微术. 分析测试技术与仪器，第1卷，第1 期， 第44页，(1992年). 1992, 

   

（ 1 ） 新一代移动通信基站氮化镓射频功率放大器, 负责人, 国家任务, 2015-01--2017-12
（ 2 ） 面向可见光通信的宽带高效LED器件核心技术研究, 负责人, 地方任务, 2015-01--2017-12
（ 3 ） 硅衬底非/半极性GaN材料研究(南昌大学国家硅基LED工程技术研究中心开放课题）, 负责人, 其他任务, 2017-09--2019-08
（ 4 ） 半极性GaN基黄橙光材料研究, 负责人, 国家任务, 2018-01--2021-12
（ 5 ） 第三代半导体 核心关键设备：第三课题 “面向大尺寸AlN单晶的PVT和高温HVPE设备研制, 参与, 国家任务, 2017-07--2020-12
（ 6 ） 薄膜生长缺陷跨时空尺度原位/实时监测与调控实验装置, 参与, 国家任务, 2018-01--2022-12

863项目合作单位：杭州士兰明芯科技有限公司；华南理工大学；西安电子科技大学

广东省战略新兴产业LED项目合作单位：广东量晶光电科技有限公司、东莞福地电子材料有限公司

广东省中国科学院全面战略合作项目单位：广东银雨芯片半导体有限公司

已指导学生

王建霞  博士研究生  080501-材料物理与化学  

金东东  博士研究生  080903-微电子学与固体电子学  

吉泽生  硕士研究生  085204-材料工程  

李方政  博士研究生  080501-材料物理与化学  

孟钰淋  博士研究生  080501-材料物理与化学  

文玲  硕士研究生  085204-材料工程  

柴若皓  硕士研究生  080501-材料物理与化学  

现指导学生

李文龙  博士研究生  080501-材料物理与化学