从事微电子科学技术领域，主要涉及存储器模型机理、材料结构、核心共性技术和集成电路的微纳加工等方面

   

080903-微电子学与固体电子学
080902-电路与系统
085209-集成电路工程

新型纳米存储器件与集成技术
集成电路技术

1998-06--1999-11   中科院半导体研究所/微电子中心   博士后
1995-09--1998-05   北京航空航天大学   博士
1985-09--1988-06   合肥工业大学   硕士
1981-09--1985-07   合肥工业大学   学士

   

2000-07~现在, 中国科学院微电子研究所, 研究员

2017-11-26-今,IEEE, Fellow
2016-01-01-今,the EDS Newsletter​, Regional Editor
2016-01-01-今,IEEE EDS Beijing Chapter, 主席
2015-01-01-今,国家重点研发计划纳米科技重点专项专家组成员,
2014-01-01-今,中国真空学会, 理事
2013-01-01-今,中国科学, 编委
2011-01-01-今,IEEE Electron Devices Society, Distinguished Lecturer
2011-01-01-今,Applied Physics A, 编辑
2010-12-01-今,无锡华润微电子有限公司掩模工厂技术顾问,
2008-06-06-今,中科院科学院科学出版社基金,
2008-04-01-今,“纳米科学技术大系”编委会,
2007-01-01-今,中国科学院物理研究所纳米物理与器件实验室学术委员会,
2006-09-01-今,中国仪器仪表学会微纳器件与系统技术分会, 第一届理事会名誉理事长
2002-11-01-今,中国材料研究学会青年委员会,

半导体存储器技术

   

（1） 2017年度何梁何利基金科学与技术进步奖（电子信息技术奖）, 一等奖, 其他, 2017
（2） 氧化物阻变存储器机理与性能调控, 二等奖, 国家级, 2016
（3） 阻变存储器机理与性能调控, 一等奖, 省级, 2015
（4） 极大规模集成电路关键技术研究集体, , 院级, 2014
（5） 阻变存储器及集成的基础研究, 二等奖, 省级, 2014
（6） 高精度微纳结构掩模制造核心技术, 二等奖, 国家级, 2013
（7） 中国真空学会“中国真空科技成就奖(莱宝奖)”, , 其他, 2012
（8） 2011年度中国科学院“优秀研究生指导教师”, , 研究所（学校）, 2011
（9） 2011年度中国科学院“朱李月华优秀教师”, , 研究所（学校）, 2011
（10） 微纳结构‘自上而下’制备核心技术与集成应用, 一等奖, 省级, 2010
（11） 移动通讯用滤波器关键技术及产业化, 二等奖, 国家级, 2009
（12） 中高频声表面波关键材料与器件研究, 二等奖, 国家级, 2007
（13） 中高频声表面波关键材料与器件研究, 一等奖, 省级, 2006
（14） 亚30nm CMOS器件及其关键技术, 二等奖, 国家级, 2005
（15） 27nm CMOS器件, 一等奖, 省级, 2004
（16） 0.18um的集成电路工艺技术, 二等奖, 省级, 2002
（17） 纳米硅薄膜微结构与物性研究, 三等奖, 部委级, 1999

[1] 罗庆, 吕舒贤, 高兆猛, 王渊, 刘明. 一种铁电器件的制造方法. CN: CN114203905A, 2022-03-18.

[2] 毕冲, 刘明. 一种MRAM及其制造方法. CN: CN113963734A, 2022-01-21.

[3] 毕冲, 赵倩文, 刘明. 一种基于SOT-MRAM的读写方法、读写电路及SOT-MRAM. CN: CN113948129A, 2022-01-18.

[4] 李泠, 刘东阳, 卢年端, 王嘉玮, 耿玓, 刘明. 一种TFT沟道缺陷态密度的提取方法. CN: CN113658881A, 2021-11-16.

[5] 李泠, 刘东阳, 卢年端, 王嘉玮, 耿玓, 刘明. 一种磁随机存储器数据写入方法及写入装置. CN: CN113643737A, 2021-11-12.

[6] 刘琦, 汪泳州, 吴祖恒, 时拓, 刘宇, 张培文, 刘明. 一种三维半导体器件、芯片及三维半导体器件的制备方法. CN: CN113555353A, 2021-10-26.

[7] 耿玓, 黄施捷, 苏悦, 李泠, 卢年端, 刘明. 一种像素电路、显示设备及像素补偿方法. CN: CN113487994A, 2021-10-08.

[8] 耿玓, 季寒赛, 李泠, 卢年端, 刘明. 一种栅极驱动电路、驱动方法及GOA电路. CN: CN113380172A, 2021-09-10.

[9] 耿玓, 陈倩, 李泠, 卢年端, 刘明. 一种栅极驱动装置、驱动方法、栅极驱动设备和显示系统. CN: CN113380198A, 2021-09-10.

[10] 邢国忠, 林淮, 吴祖恒, 牛洁斌, 姚志宏, 尚大山, 李泠, 刘明. 忆阻器、汉明距离计算方法及存算一体集成应用. CN: CN113129967A, 2021-07-16.

[11] 耿玓, 黄施捷, 苏悦, 季寒赛, 陈倩, 卢年端, 李泠, 刘明. 一种像素电路、像素电路的驱动方法及显示装置. CN: CN113096589A, 2021-07-09.

[12] 邢国忠, 刘龙, 王迪, 林淮, 王艳, 许晓欣, 刘明. 基于磁畴壁驱动型磁隧道结的激活函数发生器及制备方法. CN: CN113193110A, 2021-07-30.

[13] 林雪梅, 李蒙蒙, 卢年端, 李泠, 刘明. 单分子层有机半导体层及有机场效应晶体管的制备方法. CN: CN112951999A, 2021-06-11.

[14] 杨建国, 吕杭炳, 刘明. 一种阻变存储器单元电路、阻变存储器及写操作方法. CN: CN112837733A, 2021-05-25.

[15] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 一种发光驱动电路、方法及显示驱动电路. CN: CN112992042A, 2021-06-18.

[16] 吴东阳, 毕冲, 卢年端, 李泠, 刘明. 无外场自旋轨道矩驱动磁翻转磁矩的器件及制备方法. CN: CN112968125A, 2021-06-15.

[17] 尚大山, 李悦, 刘琦, 徐晗, 窦春萌, 刘明, 刘宇. 人工突触单元及其制备方法. CN: CN112968028A, 2021-06-15.

[18] 刘琦, 吴祖恒, 时拓, 汪泳州, 刘宇, 张培文, 刘明. RRAM的3D垂直堆积集成结构及其集成方法. CN: CN113054101A, 2021-06-29.

[19] 尚潇, 史丽娜, 牛洁斌, 李龙杰, 王冲, 谢常青, 李泠, 刘明. 一种基于硅纳米结构的高分辨率结构色超表面及制备方法. CN: CN113013630A, 2021-06-22.

[20] 史丽娜, 王冲, 牛洁斌, 尚潇, 李龙杰, 陈生琼, 谢常青, 李泠, 刘明. 结构色功能纳米结构及其制备方法. CN: CN112850638A, 2021-05-28.

[21] 邢国忠, 王迪, 林淮, 刘龙, 刘宇, 吕杭炳, 谢常青, 李泠, 刘明. 磁电阻器件以及改变其阻态的方法、突触学习模块. CN: CN112864314A, 2021-05-28.

[22] 邢国忠, 林淮, 张锋, 王迪, 刘龙, 谢常青, 李泠, 刘明. 多阻态自旋电子器件、读写电路及存内布尔逻辑运算器. CN: CN112599161A, 2021-04-02.

[23] 刘琦, 吴祖恒, 张续猛, 时拓, 刘宇, 张培文, 刘明. 多功能突触器件及其制作方法. CN: CN112563415A, 2021-03-26.

[24] 卢年端, 李泠, 姜文峰, 耿玓, 王嘉玮, 刘明. 薄膜晶体管的设计方法. CN: CN112307625A, 2021-02-02.

[25] 李泠, 史学文, 卢年端, 陆丛研, 耿玓, 段新绿, 刘明. 基于氧化锌纳米线的压力传感器及其制备方法. CN: CN112271250A, 2021-01-26.

[26] 卢年端, 李泠, 史学文, 姜文峰, 陆丛研, 耿玓, 刘明. 基于薄膜晶体管的压力传感器及其制备方法. CN: CN112271247A, 2021-01-26.

[27] 卢年端, 李泠, 姜文峰, 史学文, 陆丛研, 耿玓, 刘明. 基于氧化物纳米线的压力传感器结构及其制备方法. CN: CN112271248A, 2021-01-26.

[28] 罗庆, 吕杭炳, 刘明. 可编程二极管的制备方法及铁电存储器. CN: CN112259537A, 2021-01-22.

[29] 范林杰, 毕津顺, 习凯, 刘明. 一种霍尔传感器及其制备和测试方法. CN: CN112540329A, 2021-03-23.

[30] 范林杰, 毕津顺, 习凯, 刘明. 一种磁场探测方法及装置. CN: CN112420917A, 2021-02-26.

[31] 杨建国, 刘超, 吕杭炳, 刘明. 一种非易失静态存储单元、控制方法、元器件及设备. CN: CN112382320A, 2021-02-19.

[32] 邢国忠, 林淮, 刘宇, 张凯平, 张康玮, 吕杭炳, 谢常青, 刘琦, 李泠, 刘明. 一种自参考存储结构和存算一体电路. CN: CN112382319A, 2021-02-19.

[33] 许晓欣, 余杰, 董大年, 李晓燕, 郑旭, 吕杭炳, 刘明. 忆阻器、制备方法及全忆阻器基的神经形态计算芯片. CN: CN113517391A, 2021-10-19.

[34] 杨建国, 刘超, 吕杭炳, 刘明. 基于7T1C结构的存储单元及其操作方法、存储器. CN: CN112133347A, 2020-12-25.

[35] 罗庆, 陈冰, 吕杭炳, 刘明, 路程. 互补型存储单元及其制备方法、互补型存储器. CN: CN112002364A, 2020-11-27.

[36] 罗庆, 陈冰, 吕杭炳, 刘明, 路程. 对称型存储单元及BNN电路. CN: CN112002362A, 2020-11-27.

[37] 罗庆, 吕杭炳, 余杰, 刘明. 用于选通管疲劳特性测试的装置及方法. CN: CN111965462A, 2020-11-20.

[38] 邢国忠, 林淮, 刘宇, 张培文, 谢常青, 李泠, 刘明. 无外磁场定向自旋翻转的SOT-MRAM及阵列. CN: CN111986717A, 2020-11-24.

[39] 毕冲, 刘明. 磁场传感器及测试方法. CN: CN111929625A, 2020-11-13.

[40] 罗庆, 丁亚欣, 吕杭炳, 刘明. 一种选通管及其制备方法. CN: CN112216793A, 2021-01-12.

[41] 邢国忠, 林淮, 路程, 刘琦, 吕杭炳, 李泠, 刘明. 自旋电子器件、SOT-MRAM存储单元、存储阵列以及存算一体电路. CN: CN112002722A, 2020-11-27.

[42] 毕冲, 刘明. 缓存器件及制作方法. CN: CN111863060A, 2020-10-30.

[43] 卢年端, 李泠, 吴全潭, 姜文峰, 王嘉玮, 耿玓, 刘明. 一种模拟人工感知神经元的方法及电路. CN: CN111985633A, 2020-11-24.

[44] 卢年端, 李泠, 吴全潭, 王嘉玮, 耿玓, 刘明. 一种对检测到的信号进行处理的方法及电路. CN: CN111933197A, 2020-11-13.

[45] 梁圣法, 张文昌, 项飞斌, 牛洁斌, 姚志宏, 李冬梅, 刘明, 谢常青. 声表面波滤波器及其制备方法. CN: CN111769816A, 2020-10-13.

[46] 罗庆, 丁亚欣, 余杰, 吕杭炳, 刘明. 一种提升选通管器件性能的方法、系统、设备和介质. CN: CN111769133A, 2020-10-13.

[47] 罗庆, 王渊, 吕杭炳, 姜鹏飞, 刘明. 反铁电存储器. CN: CN111769122A, 2020-10-13.

[48] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 铟镓锌氧薄膜晶体管的掺杂方法. CN: CN111710609A, 2020-09-25.

[49] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 制备共面型铟镓锌氧薄膜晶体管的方法及薄膜晶体管. CN: [[[CN111696868A]]], [[["2020-09-22"]]].

[50] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 共面铟镓锌氧薄膜晶体管及其制备方法. CN: CN111682074A, 2020-09-18.

[51] 罗庆, 姜鹏飞, 吕杭炳, 王渊, 刘明. 一种HfO 2 基铁电电容器及其制备方法和HfO 2 基铁电存储器. CN: CN111668372A, 2020-09-15.

[52] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 可应用于同时发光的像素电路及其驱动方法、显示装置. CN: CN111489696A, 2020-08-04.

[53] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 具有电压补偿功能的像素电路及其驱动方法、显示面板. CN: CN111489697A, 2020-08-04.

[54] 窦春萌, 王琳方, 叶望, 王雪红, 刘璟, 刘琦, 吕杭炳, 刘明. 一种灵敏放大器、存储器读取方法及存储器和电子设备. CN: CN111653300A, 2020-09-11.

[55] 张君宇, 刘璟, 谢元禄, 霍长兴, 张坤, 呼红阳, 刘明. 一种非易失性存储器的读取方法、装置及系统. CN: CN111625200A, 2020-09-04.

[56] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 一种显示阵列的驱动电路及驱动方法. CN: CN111445842B, 2021-08-31.

[57] 窦春萌, 叶望, 王琳方, 王雪红, 刘璟, 刘琦, 吕杭炳, 刘明. 一种字线译码电路、字线选通方法及存储器和电子设备. CN: CN111627481B, 2022-02-01.

[58] 卢年端, 姜文峰, 李泠, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种二维材料超晶格器件及制作方法. CN: CN111653613A, 2020-09-11.

[59] 呼红阳, 张君宇, 张坤, 霍长兴, 谢元禄, 刘璟, 刘明. 一种带有辅助计算功能的NAND存储器. CN: CN111679788A, 2020-09-18.

[60] 张君宇, 刘璟, 谢元禄, 霍长兴, 张坤, 呼红阳, 刘明. 一种用于非易失性存储器的操作方法、装置及存储介质. CN: CN111583983A, 2020-08-25.

[61] 林淮, 邢国忠, 刘明. 二维材料基选通器、存储器单元、阵列及其操作方法. CN: CN111554809A, 2020-08-18.

[62] 刘琦, 张续猛, 曹荣荣, 刘明, 吴祖恒. 一种神经元电路、基于神经网络的集成电路和电子设备. CN: CN111598229A, 2020-08-28.

[63] 张坤, 刘璟, 张君宇, 谢元禄, 霍长兴, 呼红阳, 刘明. 差错控制编码ECC系统及包括ECC系统的存储器设备. CN: CN111597072A, 2020-08-28.

[64] 张坤, 刘璟, 张君宇, 谢元禄, 霍长兴, 呼红阳, 刘明. 数据编码、解码方法及数据处理系统. CN: CN111628780A, 2020-09-04.

[65] 呼红阳, 张君宇, 张坤, 霍长兴, 谢元禄, 刘璟, 刘明. 现场可编程逻辑门阵列的配置系统和方法. CN: CN111680000A, 2020-09-18.

[66] 李泠, 黄施捷, 卢年端, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种双栅薄膜晶体管及其制作方法. CN: CN111640673A, 2020-09-08.

[67] 卢年端, 姜文峰, 李泠, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种形成金属引线的方法及二维材料器件. CN: CN111640662A, 2020-09-08.

[68] 谢元禄, 刘璟, 张君宇, 霍长兴, 呼红阳, 张坤, 刘明. 存储器测试电路、测试系统及测试方法. CN: CN111667877A, 2020-09-15.

[69] 呼红阳, 张君宇, 谢元禄, 刘璟, 张坤, 霍长兴, 刘明. 预取数据的方法及装置. CN: CN111651120A, 2020-09-11.

[70] 谢元禄, 刘璟, 张君宇, 霍长兴, 呼红阳, 张坤, 刘明. 一种双通道数据传输装置及系统. CN: CN111651385A, 2020-09-11.

[71] 霍长兴, 刘璟, 张君宇, 谢元禄, 呼红阳, 张坤, 刘明. 存储器及其读出电路. CN: CN111653303A, 2020-09-11.

[72] 谢元禄, 刘璟, 张君宇, 霍长兴, 呼红阳, 张坤, 刘明. 获取存储器中目标数据的方法、装置和电路. CN: CN111651119A, 2020-09-11.

[73] 霍长兴, 刘璟, 张君宇, 谢元禄, 呼红阳, 张坤, 刘明. 存储器及其限流保护电路. CN: CN111653304A, 2020-09-11.

[74] 谢元禄, 刘璟, 张君宇, 霍长兴, 呼红阳, 张坤, 刘明. 存储器系统、控制方法和控制装置. CN: CN111651118A, 2020-09-11.

[75] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 像素补偿电路及其控制方法、显示驱动装置、显示设备. CN: CN111383598A, 2020-07-07.

[76] 窦春萌, 王雪红, 钱其昌, 王琳方, 叶望, 刘琦, 刘璟, 刘明. 一种存储单元、三值内容寻址存储器以及电子设备. CN: CN112885392A, 2021-06-01.

[77] 吕杭炳, 杨建国, 许晓欣, 刘明. 存储单元结构及存储器阵列结构、电压偏置方法. CN: CN111446271A, 2020-07-24.

[78] 窦春萌, 王琳方, 王雪红, 叶望, 刘琦, 刘璟, 刘明. 一种动态钳位存内计算电路、存储器以及电子设备. CN: CN113517008A, 2021-10-19.

[79] 李龙杰, 史丽娜, 牛洁斌, 尚潇, 陈生琼, 谢常青, 刘明. 基于结构色的图像显示装置、系统及该装置的制作方法. CN: CN111443482B, 2021-10-29.

[80] 尚潇, 史丽娜, 牛洁斌, 李龙杰, 谢常青, 刘明. 基于硅纳米柱的结构色成像结构、测试系统及制备方法. CN: CN111426686A, 2020-07-17.

[81] 范林杰, 毕津顺, 徐彦楠, 习凯, 刘明. 非易失霍尔传感器及其制造方法、测试方法. CN: CN111416035A, 2020-07-14.

[82] 史丽娜, 尚潇, 牛洁斌, 李龙杰, 谢常青, 刘明. 纳米结构阵列及其制备方法和含其的色散仪. CN: CN111239077A, 2020-06-05.

[83] 陆丛研, 卢年端, 李泠, 刘宇, 王嘉玮, 耿玓, 刘明. 一种多介质检测传感器及其制作方法. CN: CN111415993A, 2020-07-14.

[84] 尚大山, 李悦, 刘琦, 刘明, 刘宇. 氧化物基电子突触器件及其阵列. CN: CN111276603A, 2020-06-12.

[85] 杨雪琴, 毕津顺, 李博, 习凯, 季兰龙, 刘明. 一种基于RRAM的非易失性锁存器及集成电路. CN: CN210956168U, 2020-07-07.

[86] 龙世兵, 周选择, 徐光伟, 熊文豪, 赵晓龙, 刘明. 氧化镓基半导体结构及其制备方法. CN: CN111129166A, 2020-05-08.

[87] 龙世兵, 郝伟兵, 徐光伟, 刘琦, 赵晓龙, 刘明. 基于氧化镓的PN结结构及其制备方法. CN: CN111063742A, 2020-04-24.

[88] 龙世兵, 向学强, 丁梦璠, 徐光伟, 赵晓龙, 刘明. 基于氧化镓的异质结半导体结构及其器件. CN: CN111129122A, 2020-05-08.

[89] 窦春萌, 刘璟, 刘琦, 吕杭炳, 刘明. 实现双方向并行数据读取的非挥发存储阵列. CN: CN111028876B, 2021-11-12.

[90] 窦春萌, 刘璟, 刘琦, 吕杭炳, 刘明. 基于电阻分压读取的阻变型存储单元. CN: CN110956993A, 2020-04-03.

[91] 卢年端, 段新绿, 刘明, 李泠, 杨冠华, 陆丛研, 史学文, 王嘉玮, 耿玓, 揣喜臣, 姜文峰. 光学晶体管及其制备方法. CN: CN111048622A, 2020-04-21.

[92] 许晓欣, 吕杭炳, 张锐, 王侃文, 刘明. 阻变存储器、存算器件、芯片及阻变存储器的制备方法. CN: CN112838161A, 2021-05-25.

[93] 刘琦, 魏劲松, 吴祖恒, 时拓, 窦春萌, 刘明, 张续猛. 基于1T1R结构的忆阻器及其制备方法、集成结构. CN: CN110867464A, 2020-03-06.

[94] 刘琦, 张续猛, 刘明, 吕杭炳, 吴祖恒. 一种传入神经元电路及机械感受系统. CN: CN112819146A, 2021-05-18.

[95] 徐彦楠, 毕津顺, 习凯, 季兰龙, 刘明. 改良的电荷俘获型存储器. CN: CN110783343A, 2020-02-11.

[96] 刘琦, 吴祖恒, 时拓, 刘明, 吕杭炳, 张续猛. 人工神经突触器件及其制备方法. CN: CN110600610A, 2019-12-20.

[97] 刘琦, 吴祖恒, 时拓, 刘明, 吕杭炳, 张续猛, 王伟. 人工感受神经电路及其制备方法. CN: CN110647982A, 2020-01-03.

[98] 刘宇, 刘明, 胡媛, 张凯平, 张培文, 路程, 赵盛杰, 刘琦, 吕杭炳, 谢常青. 一种金属氧化物场效应晶体管及其制作方法. CN: CN110571261A, 2019-12-13.

[99] 李龙杰, 史丽娜, 牛洁斌, 陈生琼, 谢常青, 刘明. 一种比色传感器及其制作方法及其测试系统. CN: CN110632063A, 2019-12-31.

[100] 孙海定, 龙世兵. 一种多量子阱结构、光电器件外延片及光电器件. CN: CN110571311B, 2021-12-14.

[101] 张君宇, 刘璟, 吕杭炳, 张锋, 刘明. 一种存储器. CN: CN110349617A, 2019-10-18.

[102] 张君宇, 刘璟, 吕杭炳",null,"刘明. 一种存储器. CN: CN210136722U, 2020-03-10.

[103] 张君宇, 刘璟, 吕杭炳, 张锋, 刘明. 芯片测试方法、装置及电子设备. CN: CN110441667A, 2019-11-12.

[104] 张君宇, 刘璟, 吕杭炳, 张锋, 刘明. 存储器及数据处理方法. CN: CN110444238A, 2019-11-12.

[105] 张君宇, 刘璟, 吕杭炳, 张锋, 刘明. 存储器及电子设备. CN: CN209980790U, 2020-01-21.

[106] 卢年端, 李泠, 耿玓, 刘明. 纳米级晶体管及其制备方法. CN: CN110176489A, 2019-08-27.

[107] 卢年端, 揣喜臣, 杨冠华, 李泠, 耿玓, 刘明. 场效应晶体管制备方法及场效应晶体管. CN: CN110061063A, 2019-07-26.

[108] 卢年端",null,null,"杨冠华, 耿玓, 刘明. 场效应晶体管及其制备方法. CN: CN110098256A, 2019-08-06.

[109] 卢年端, 揣喜臣, 杨冠华, 李泠, 耿玓, 刘明. 场效应晶体管制备方法及场效应晶体管. CN: CN110112073A, 2019-08-09.

[110] 卢年端, 李泠, 耿玓, 王嘉玮, 刘明. 一种薄膜晶体管及制备方法. CN: CN110190131A, 2019-08-30.

[111] 史丽娜, 陈生琼, 谢常青, 牛洁斌, 刘明. 一种基于单根硅线的增益辅助超共振. CN: CN109870765A, 2019-06-11.

[112] 史丽娜, 陈生琼, 谢常青, 牛洁斌, 刘明. 一种含增益辅助的硅双线系统. CN: CN109917512A, 2019-06-21.

[113] 卢年端, 姜文峰, 李泠, 耿玓, 刘琦, 吕杭炳, 刘明. 阻变存储器. CN: CN109904314A, 2019-06-18.

[114] 卢年端, 姜文峰, 李泠, 耿玓, 刘琦, 吕杭炳, 刘明. 阻变存储器的制备方法. CN: CN109920911A, 2019-06-21.

[115] 梁圣法, 张文昌, 项飞斌, 姚志宏, 李冬梅, 刘明, 谢常青. 纳米孔结构及其加工设备和方法. CN: CN109795983A, 2019-05-24.

[116] 史丽娜, 李龙杰, 张凯平, 牛洁斌, 谢常青, 刘明. 使用金属诱导自掩模刻蚀工艺制作石英表面抗反层的方法. CN: CN109856706A, 2019-06-07.

[117] 吕杭炳, 罗庆, 许晓欣, 龚天成, 刘明. 融合型存储器的写入、擦除方法. CN: CN109887532A, 2019-06-14.

[118] 梁圣法, 张文昌, 项飞斌, 姚志宏, 李冬梅, 刘明, 谢常青. 纳米孔结构、控制纳米孔大小的装置及方法. CN: CN109775659A, 2019-05-21.

[119] 吕杭炳, 罗庆, 许晓欣, 龚天成, 刘明. 存储器. CN: CN109801977A, 2019-05-24.

[120] 吕杭炳, 罗庆, 许晓欣, 龚天成, 刘明. 融合型存储器. CN: CN109860190A, 2019-06-07.

[121] 吕杭炳, 许晓欣, 罗庆, 刘明. 神经网络运算系统. CN: CN109829540A, 2019-05-31.

[122] 卢年端, 李泠, 揣喜臣, 杨冠华, 耿玓, 刘明. 基于二维材料的晶体管及其制备方法. CN: CN109671781A, 2019-04-23.

[123] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 像素扫描的驱动电路及方法. CN: CN109243357A, 2019-01-18.

[124] 耿玓, 苏悦, 李泠, 刘明. 无边框显示结构及无边框显示器. CN: CN109272957A, 2019-01-25.

[125] 卢年端, 马尚, 李泠",null,null,"刘明. 一种阻变存储器. CN: CN109585648A, 2019-04-05.

[126] 卢年端, 马尚, 李泠, 耿玓, 刘琦, 刘明. 一种阻变存储器. CN: CN109585648A, 2019-04-05.

[127] 卢年端, 马尚, 李泠, 耿玓, 刘明. 一种阻变存储器的制备方法. CN: CN109524544A, 2019-03-26.

[128] 刘子维, 浦探超, 史丽娜, 谢常青, 牛洁斌, 王冠亚, 李海亮, 刘明. 一种相位型衍射光栅. CN: CN109212641A, 2019-01-15.

[129] 卢年端, 李泠, 耿玓, 刘明. 基于纳米带的晶体管及其制备方法. CN: CN109119485A, 2019-01-01.

[130] 刘琦, 张续猛, 刘明, 吕杭炳, 龙世兵. 一种神经元电路以及神经网络电路. CN: CN109102071B, 2020-12-11.

[131] 刘子维, 史丽娜, 浦探超, 牛洁斌, 李海亮, 王冠亚, 谢常青, 刘明. 一种纳米柱传感器、折射率检测装置及方法. CN: CN109160483A, 2019-01-08.

[132] 刘琦, 赵晓龙, 吴祖恒, 刘宇, 张凯平, 路程, 张培文, 赵盛杰, 姚志宏, 余兆安, 吕杭炳, 刘明. 非易失性存储方法及装置. CN: CN108922961A, 2018-11-30.

[133] 龙世兵, 覃愿, 董航, 何启鸣, 刘明. 一种氧化镓基紫外探测器及其制作方法. CN: CN108922931A, 2018-11-30.

[134] 龙世兵, 覃愿, 董航, 何启鸣, 刘明. 一种氧化镓基紫外探测器. CN: CN108878576A, 2018-11-23.

[135] 卢年端, 李泠, 耿玓, 刘明. 一种用于测量二维半导体材料的磁阻的装置及其制作方法. CN: CN108807211A, 2018-11-13.

[136] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 像素补偿电路. CN: CN108806606A, 2018-11-13.

[137] 卢年端, 李泠, 刘明. 一种用于获取表面势的方法及装置. CN: CN108804807A, 2018-11-13.

[138] 卢年端, 李泠, 刘明, 刘琦. 一种阻变存储器的设计方法及装置. CN: CN108807456A, 2018-11-13.

[139] 罗庆, 吕杭炳, 刘明, 许晓欣, 路程. 1S1R存储器集成结构及其制备方法. CN: CN108630810A, 2018-10-09.

[140] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 对FPGA配置数据进行升级的电路及方法. CN: CN108319465A, 2018-07-24.

[141] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 对FPGA配置数据进行升级的电路. CN: CN208314757U, 2019-01-01.

[142] 罗庆, 吕杭炳, 刘明. 自整流阻变存储器及其制备方法. CN: CN108493336A, 2018-09-04.

[143] 刘琦, 王伟, 刘森, 张峰, 吕杭炳, 龙世兵, 刘明. 基于阻变器件交叉阵列结构实现逻辑计算的方法. CN: CN108182959A, 2018-06-19.

[144] 龙世兵, 何启鸣, 董航, 刘琦, 吕杭炳, 刘明. 增强氧化镓半导体器件欧姆接触的方法. CN: CN107993934A, 2018-05-04.

[145] 梁圣法, 李冬梅, 刘明, 谢常青. 一种声子晶体声表面波滤波器及制作方法. CN: CN107733393A, 2018-02-23.

[146] 刘琦, 张续猛, 刘明, 吕杭柄, 龙世兵, 赵晓龙. 基于易失性阈值转变器件的神经元电路. CN: CN107909146A, 2018-04-13.

[147] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 现场可编程门阵列多版本配置芯片、系统和方法. CN: CN107704285A, 2018-02-16.

[148] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 现场可编程门阵列多版本配置的芯片及系统. CN: CN207264382U, 2018-04-20.

[149] 龙世兵, 张美芸, 许晓欣, 刘琦, 吕杭炳, 刘明. 一种阻变存储器的制造方法和阻变存储器. CN: CN107275482A, 2017-10-20.

[150] 李梅, 毕津顺, 戴茜茜, 刘明, 李博, 习凯. 一种闪存存储器的抗总剂量辐照加固方法. CN: CN109213620A, 2019-01-15.

[151] 李梅, 毕津顺, 戴茜茜, 刘明, 李博, 习凯. 一种闪存存储电路的抗总剂量辐照加固方法. CN: CN109215715A, 2019-01-15.

[152] 龙世兵, 董航, 何启鸣, 刘明. 一种金刚石基底场效应晶体管制备方法. CN: CN107146756A, 2017-09-08.

[153] 龙世兵, 董航, 何启鸣, 刘明. 一种氧化镓基底场效应晶体管及其制备方法. CN: CN107331607A, 2017-11-07.

[154] 龙世兵, 董航, 何启鸣, 刘明. 一种金刚石材料沟道导电特性优化方法. CN: CN107331701A, 2017-11-07.

[155] 龙世兵, 董航, 何启鸣, 刘明. 一种金刚石材料表面空穴浓度提高方法. CN: CN107331602A, 2017-11-07.

[156] 戴茜茜, 毕津顺, 李梅, 刘明, 李博, 习凯. 一种闪存存储电路的抗总剂量效应加固方法. CN: CN109119110A, 2019-01-01.

[157] 谢常青, 王恩亮, 史丽娜, 李海亮, 刘明, 高南. 一种单极涡旋光栅. CN: CN108931829B, 2020-06-30.

[158] 吕杭炳, 刘明, 龙世兵, 刘琦. 阻变存储器及其制备方法. CN: CN107068860A, 2017-08-18.

[159] 卢年端, 魏巍, 李泠, 刘明. 一种优化氧化物基的阻变存储器性能的方法. CN: CN107221599A, 2017-09-29.

[160] 刘子维, 浦探超, 史丽娜, 谢常青, 王冠亚, 李海亮, 牛洁斌, 刘明. 一种用于极紫外的二维单级衍射光栅. CN: CN106959482A, 2017-07-18.

[161] 龙世兵, 张美芸, 许晓欣, 刘琦, 吕杭炳, 刘明. 一种提高RRAM均一性的方法及RRAM器件. CN: CN107221598A, 2017-09-29.

[162] 龙世兵, 李磊磊, 滕蛟, 刘琦, 吕杭炳, 刘明. 阻变存储器的存储状态的调控方法. CN: CN107134525A, 2017-09-05.

[163] 龙世兵, 李磊磊, 滕蛟, 刘琦, 吕杭炳, 刘明. 磁性纳米线器件、其制作方法与磁性纳米线的构筑方法. CN: CN107123732A, 2017-09-01.

[164] 龙世兵, 李磊磊, 滕蛟, 刘琦, 吕杭炳, 刘明. 纳米线的构筑方法及数据存储方法. CN: CN107068857A, 2017-08-18.

[165] 龙世兵, 何启鸣, 董航, 刘琦, 吕杭炳, 刘明. 基于氧化镓的结势垒肖特基二极管及其制备方法. CN: CN107026209A, 2017-08-08.

[166] 龙世兵, 何启鸣, 董航, 刘琦, 吕杭炳, 刘明. 提高氧化镓材料导热性的方法. CN: CN107039245A, 2017-08-11.

[167] 刘琦, 伍法才, 刘明, 龙世兵, 吕杭炳. 一种实现多值存储的阻变存储器的制备方法. CN: CN106887519A, 2017-06-23.

[168] 浦探超, 刘子维, 史丽娜, 谢常青, 李海亮, 牛洁斌, 刘明. 一种极紫外单级衍射光栅. CN: CN106646710A, 2017-05-10.

[169] 刘子维, 浦探超, 史丽娜, 谢常青, 李海亮, 牛洁斌, 王冠亚, 刘明. 一种极紫外高级抑制衍射光栅. CN: CN107045156A, 2017-08-15.

[170] 张凯平, 胡媛, 刘宇, 陆丛研, 赵盛杰, 张培文, 谢常青, 刘明. 一种图形化敏感金属或金属氧化物材料的加工方法. CN: CN106981420A, 2017-07-25.

[171] 刘琦, 赵晓龙, 刘森, 刘明, 吕杭炳, 龙世兵, 王艳, 伍法才. 导电桥半导体器件及其制备方法. CN: CN106876400A, 2017-06-20.

[172] 吕杭炳, 罗庆, 许晓欣, 龙世兵, 刘琦, 刘明. 基于过渡金属氧化物的选择器及其制备方法. CN: CN106910759A, 2017-06-30.

[173] 史丽娜, 牛洁斌, 李海亮, 刘子维, 浦探超, 谢常青, 刘明. 一种衍射光栅. CN: CN106772732A, 2017-05-31.

[174] 史丽娜, 刘子维, 浦探超, 李海亮, 牛洁斌, 谢常青, 刘明. 一种透射光栅. CN: CN106597588A, 2017-04-26.

[175] 刘明, 赵盛杰, 牛洁斌, 李海亮, 胡媛, 张凯平, 张培文, 路程, 刘宇. 一种托盘及其加工工艺. CN: CN106754247A, 2017-05-31.

[176] 谢元禄, 张坤, 孙海涛, 刘璟, 毕津顺, 刘明. 一种对可编程逻辑器件进行配置或更新的装置和方法. CN: CN106445544A, 2017-02-22.

[177] 孙海涛, 刘璟, 吕杭炳, 刘琦, 龙世兵, 刘明. 阻变存储器的阻态读取电路及阻变存储器. CN: CN106251895A, 2016-12-21.

[178] 孙海涛, 刘璟, 吕杭炳, 刘琦, 龙世兵, 刘明. 用于初始化阻变存储器的电路及阻变存储器. CN: CN106297877A, 2017-01-04.

[179] 史丽娜, 李海亮, 刘子维, 浦探超, 牛洁斌, 谢常青, 刘明. 一种透射光栅. CN: CN106094086A, 2016-11-09.

[180] 史丽娜, 刘子维, 浦探超, 李海亮, 牛洁斌, 谢常青, 刘明. 一种单级衍射光栅. CN: CN106094087A, 2016-11-09.

[181] 李海亮, 史丽娜, 牛洁斌, 王冠亚, 谢常青, 刘明. 大高宽比纳米级金属结构的制作方法. CN: CN106094445A, 2016-11-09.

[182] 李海亮, 史丽娜, 牛洁斌, 王冠亚, 谢常青, 刘明. 极紫外多层膜反射式单级衍射光栅. CN: CN106094084A, 2016-11-09.

[183] 朱效立, 谢常青, 华一磊, 李海亮, 刘明, 施百龄. 脉冲电镀金的方法及形成的金镀层. CN: CN107385486A, 2017-11-24.

[184] 陈珊, 毕津顺, 王艳, 刘明. 应用于辐照试验的芯片封装结构及其制作方法. CN: CN106019128A, 2016-10-12.

[185] 吕杭炳, 刘明, 许晓欣, 罗庆, 刘琦, 龙世兵. 一种自选通阻变存储器件及其制备方法. CN: CN105826468A, 2016-08-03.

[186] 朱效立, 谢常青, 刘明, 牛洁斌, 华一磊, 施百龄. 反射式单级衍射光栅及其制造方法. CN: CN107315211A, 2017-11-03.

[187] 吕杭炳, 刘明, 刘琦, 龙世兵. 一种Cu基阻变存储器的制备方法及存储器. CN: CN105789438A, 2016-07-20.

[188] 吕杭炳, 刘明, 刘琦, 龙世兵. 一种Cu基阻变存储器的制备方法及存储器. CN: CN105789438B, 2018-07-31.

[189] 刘琦, 赵晓龙, 刘明, 刘森, 龙世兵, 吕杭炳, 卢年端, 王艳, 张康玮. 一种双极型阻变存储器及其制备方法. CN: CN105895800A, 2016-08-24.

[190] 刘明, 罗庆, 许晓欣, 吕杭炳, 龙士兵, 刘琦. 基于两端器件的脉冲参数测试系统. CN: CN105957558A, 2016-09-21.

[191] 刘明, 罗庆, 许晓欣, 吕杭炳, 龙世兵, 刘琦. 用于双极性阻变存储器的选择器件及其制备方法. CN: CN107204397A, 2017-09-26.

[192] 卢年端, 孙鹏霄, 李泠, 刘明, 刘琦, 吕杭炳, 龙世兵. 改善三维集成阻变存储器耐久性的方法. CN: CN106919729A, 2017-07-04.

[193] 徐光伟, 韩志恒, 王伟, 陆丛研, 汪令飞, 李泠, 刘明. 一种获取平面型器件的接触电阻的方法. CN: CN105510717A, 2016-04-20.

[194] 卢年端, 孙鹏霄, 李泠, 刘明, 刘琦, 吕杭炳, 龙世兵. 三维集成阻变存储器的热效应评估及降低热串扰的方法. CN: CN106919723A, 2017-07-04.

[195] 汪令飞, 王伟, 徐光伟, 李泠, 刘明, 卢年端. 石墨烯晶体管的小信号模型的截止频率的计算方法. CN: CN105224717A, 2016-01-06.

[196] 瑞塔姆·白纳吉, 刘明, 刘琦, 吕杭炳, 孙海涛, 张康玮. 非挥发性阻变存储器件及其制备方法. CN: CN104810476A, 2015-07-29.

[197] 卢年端, 李泠, 刘明. 测量有机半导体状态密度的方法. CN: CN104777359A, 2015-07-15.

[198] 卢年端, 李泠, 刘明, 高南, 徐光伟, 王伟. 赛贝克系数测量结构、测量结构制备方法及测量方法. CN: CN104900557A, 2015-09-09.

[199] 卢年端, 李泠, 刘明. 测量半导体材料无序度的方法. CN: CN104792810A, 2015-07-22.

[200] 余兆安, 刘明. 窄脉冲驱动电路. CN: CN104734001A, 2015-06-24.

[201] 王明华, 王伟, 樊晓华, 刘明. 多层隧穿结三维隧穿场效应晶体管的制备方法. CN: CN105990409A, 2016-10-05.

[202] 刘琦, 刘明, 孙海涛, 吕杭炳, 龙世兵, 瑞塔姆·白纳吉, 张康玮. 非挥发性阻变存储器件及其制备方法. CN: CN105990519A, 2016-10-05.

[203] 王冠亚, 张凯, 谢常青, 李新涛, 李友, 张卫红, 张建宏, 邵鑫, 路程, 牛洁斌, 张培文, 刘明, 龙世兵. 纳米尺度的微细图形加工方法. CN: CN104597724A, 2015-05-06.

[204] 周磊, 李冬梅, 梁圣法, 谢常青, 刘明. 声表面波温度传感器. CN: CN104677518A, 2015-06-03.

[205] 刘琦, 刘明, 孙海涛, 吕杭炳, 龙世兵, 瑞塔姆·白纳吉. 非挥发性阻变存储器件及其制备方法. CN: CN105990519B, 2019-02-01.

[206] 刘琦, 刘明, 孙海涛, 张科科, 龙世兵, 吕杭炳, 瑞塔姆·白纳吉. 非挥发性阻变存储器件及其制备方法. CN: CN105990520A, 2016-10-05.

[207] 吕杭炳, 刘明, 刘琦, 龙世兵. 三端原子开关器件及其制备方法. CN: CN104465989A, 2015-03-25.

[208] 吕杭炳, 刘明, 刘琦, 龙世兵. 一种自选通阻变存储器单元及其制备方法. CN: CN104485418A, 2015-04-01.

[209] 姬濯宇, 陆丛研, 王龙, 王伟, 刘明, 李冬梅. 一种低阈值电压有机二极管及其制备方法. CN: CN104409634A, 2015-03-11.

[210] 姬濯宇, 陆丛研, 王龙, 王伟, 刘明, 李冬梅. 一种有机-无机异质结二极管及其制备方法. CN: CN104393173A, 2015-03-04.

[211] 姬濯宇, 陆丛研, 王龙, 王伟, 刘明, 李冬梅. 一种低操作电压有机场效应晶体管及其制备方法. CN: CN104332559A, 2015-02-04.

[212] 李冬梅, 周磊, 梁圣法, 谢常青, 刘明. 一种高温声表面波温度传感器. CN: CN104359584A, 2015-02-18.

[213] 龙世兵, 王国明, 张美芸, 李阳, 许定林, 王明, 许晓欣, 刘红涛, 吕杭炳, 刘琦, 刘明. 一种有效提高阻变存储器耐久性的方法. CN: CN104464801A, 2015-03-25.

[214] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种小间隙平面电极的制作方法. CN: CN104391425A, 2015-03-04.

[215] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种三维高密度电阻转变存储器的制备方法. CN: CN104393170A, 2015-03-04.

[216] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种用以获得电阻转变存储器多转变模式的操作方法. CN: CN104392746A, 2015-03-04.

[217] 卢年端, 李泠, 刘明, 孙鹏霄. 一种提取金属氧化物基阻变存储器载流子输运通道的方法. CN: CN104361908A, 2015-02-18.

[218] 梁圣法, 李冬梅, 刘明, 谢常青, 李小静, 周磊. 一种多路多斜率的非均匀采样电路. CN: CN104202050A, 2014-12-10.

[219] 卢年端, 李泠, 刘明, 孙鹏霄, 王明. 一种分析阻变存储器电流波动性的方法. CN: CN104200845A, 2014-12-10.

[220] 王伟, 李泠, 徐光伟, 王龙, 陆丛研, 姬濯宇, 刘明. 一种获取共面型薄膜晶体管接触电阻的方法. CN: CN104156526A, 2014-11-19.

[221] 龙世兵, 王国明, 张美芸, 李阳, 许晓欣, 刘红涛, 吕杭炳, 刘琦, 刘明. 对RRAM存储器耐久性参数进行测试的方法. CN: CN104134468A, 2014-11-05.

[222] 龙世兵, 王国明, 张美芸, 李阳, 许晓欣, 刘红涛, 吕杭炳, 刘琦, 刘明. 一种对RRAM存储器保持时间参数进行测试的方法. CN: CN104134463A, 2014-11-05.

[223] 李婷, 霍宗亮, 靳磊, 刘璟, 曹华敏, 王瑜, 姜丹丹, 杨潇楠, 刘明. 一种应用于三维存储领域的低压带隙基准产生电路. CN: CN104133519A, 2014-11-05.

[224] 李婷, 霍宗亮, 刘明, 王瑜, 曹华敏, 刘璟. 一种面向三维存储器的零温度系数参考电压产生电路. CN: CN104049671A, 2014-09-17.

[225] 卢年端, 李泠, 刘明, 孙鹏霄. 一种表征有机半导体器件驰豫现象的方法. CN: CN104049196A, 2014-09-17.

[226] 卢年端, 李泠, 刘明, 闫小兵, 吕杭炳, 孙鹏霄. 一种测量阻变存储器状态密度的方法. CN: CN104051022A, 2014-09-17.

[227] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种制备高存储密度多值纳米晶存储器的方法. CN: CN103972386A, 2014-08-06.

[228] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种制备表面等离子体激元纳米光子器件的方法. CN: CN103955023A, 2014-07-30.

[229] 龙世兵, 王国明, 张美芸, 李阳, 王明, 许晓欣, 刘红涛, 孙鹏霄, 吕杭炳, 刘琦, 刘明. 一种降低阻变存储器电铸电压的方法. CN: CN103956428A, 2014-07-30.

[230] 李冬梅, 周磊, 梁圣法, 李小静, 张浩, 谢常青, 刘明. 一种对硅酸镓镧晶片进行清洗的方法. CN: CN103878145A, 2014-06-25.

[231] 李婷, 霍宗亮, 刘明. 三维存储器的参考电流产生电路及其产生参考电流的方法. CN: CN103955252A, 2014-07-30.

[232] 卢年端, 李泠, 刘明, 孙鹏霄, 王明, 刘琦. 一种测量阻变存储器激活能的方法. CN: CN103928057A, 2014-07-16.

[233] 曹华敏, 霍宗亮, 刘明. 一种静态随机存取存储器时序控制电路. CN: CN103886895A, 2014-06-25.

[234] 闫小兵, 刘明, 龙世兵, 刘琦, 吕杭炳, 孙海涛. 基于钇铁石榴石的非挥发电阻转变型存储器及其制备方法. CN: CN103840081A, 2014-06-04.

[235] 牛洁斌, 刘明, 陈宝钦, 谢常青, 龙世兵, 王冠亚, 张建宏, 李海亮, 史丽娜, 朱效立. 电子束光刻对准标记在芯片上的布局. CN: CN104932212A, 2015-09-23.

[236] 毕冲, 龙世兵, 刘明. 一种对磁多畴态进行调控的方法. CN: CN103824588A, 2014-05-28.

[237] 李冬梅, 罗庆, 梁圣法, 李小静, 张浩, 谢常青, 刘明. 一种基于压缩感知的一维信号随机采样方法. CN: CN103795422A, 2014-05-14.

[238] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种用于室温检测的NO 2 气体传感器的制作方法. 中国: CN103336027A, 2013.10.02.

[239] 张凯平, 刘明, 谢常青, 龙世兵, 陆丛研, 胡媛, 刘宇, 赵盛杰. 一种改善用于Al 2 O 3 介质上的光刻工艺的方法. CN: CN103645614A, 2014-03-19.

[240] 张凯平, 刘明, 谢常青, 龙世兵, 胡媛, 刘宇, 赵盛杰, 张培文. 一种改善基于Cr掩模刻蚀工艺的方法. CN: CN103646854A, 2014-03-19.

[241] 梁圣法, 李冬梅, 李小静, 张浩, 罗庆, 周磊, 刘明, 谢常青, 杨洪璋. 一种基于柔性衬底的传感器模块. CN: CN103645215A, 2014-03-19.

[242] 刘宇, 刘明, 谢常青, 龙世兵, 胡媛, 张凯平, 赵盛杰. 一种纳米尺度EUV掩模的制备方法. CN: CN103605260A, 2014-02-26.

[243] 龙世兵, 王国明, 张美芸, 李阳, 王明, 许晓欣, 刘若愚, 李丛飞, 刘红涛, 孙鹏霄, 吕杭炳, 刘琦, 刘明. 一种对RRAM器件的脉冲参数进行测试的电路. CN: CN103531250A, 2014-01-22.

[244] 龙世兵, 张美芸, 王国明, 李阳, 王明, 许晓欣, 刘若愚, 李丛飞, 刘红涛, 孙鹏霄, 刘琦, 吕杭炳, 刘明. 一种制备纳米器件的方法. CN: CN103500701A, 2014-01-08.

[245] 李冬梅, 李小静, 梁圣法, 张浩, 罗庆, 谢常青, 刘明. 一种基于块对角阵观测矩阵构造的信号压缩传感方法. CN: CN103532566A, 2014-01-22.

[246] 龙世兵, 王国明, 张美芸, 李阳, 吕杭炳, 刘琦, 刘明. 一种对RRAM存储器脉冲参数进行测试的方法. CN: CN103531248A, 2014-01-22.

[247] 李冬梅, 李小静, 梁圣法, 张浩, 罗庆, 谢常青, 刘明. 一种随机采样斜率模数转换器. CN: CN103532552A, 2014-01-22.

[248] 孙海涛, 杨洪璋, 路程, 刘琦, 吕杭炳, 龙世兵, 谢常青, 刘明. 一种小尺寸银纳米颗粒的制备方法. CN: CN103489754A, 2014-01-01.

[249] 孙海涛, 杨洪璋, 刘琦, 吕杭柄, 牛洁斌, 张培文, 路程, 李友, 龙世兵, 谢常青, 刘明. 超低功耗阻变非挥发性存储器、其制作方法及操作方法. CN: CN103413890A, 2013-11-27.

[250] 孙海涛, 刘明, 龙世兵, 吕杭炳, 刘琦, 刘宇, 张康玮, 路程, 杨洪璋. 一种制作阻变非挥发性存储器阻变层氧化物薄膜的方法. CN: CN103400938A, 2013-11-20.

[251] 李冬梅, 罗庆, 梁圣法, 杨洪璋, 李小静, 张浩, 谢常青, 刘明. 适用于一维缓变信号的随机采样器. CN: CN103391099A, 2013-11-13.

[252] 余兆安, 姚志宏, 霍宗亮, 龙世兵, 谢常青, 刘明. 针对电容结构和MOS管结构的存储器件的参数测试方法. CN: CN104240767A, 2014-12-24.

[253] 余兆安, 姚志宏, 霍宗亮, 龙世兵, 谢常青, 刘明. 一种对负载或输出进行限流保护的装置. CN: CN104242277A, 2014-12-24.

[254] 梁圣法, 陈鑫, 詹爽, 李小静, 罗庆, 张浩, 李冬梅, 谢常青, 刘明. 基于多级压缩感知的信号采样系统及方法. CN: CN103281087A, 2013-09-04.

[255] 王永, 刘明, 霍宗亮, 刘璟, 张满红, 张康玮. 一种凹槽式的硅纳米晶存储器及其制作方法. CN: CN103296029A, 2013-09-11.

[256] 李冬梅, 李小静, 梁圣法, 张浩, 罗庆, 谢常青, 刘明. 一种以低于奈奎斯特频率的采样频率进行信号采集方法. CN: CN103346798A, 2013-10-09.

[257] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种用于室温检测的NO 2 气体传感器的制作方法. CN: CN103336027A, 2013-10-02.

[258] 李冬梅, 张浩, 梁圣法, 罗庆, 李小静, 谢常青, 刘明. 基于压缩感知理论的气体识别方法. CN: CN103346799A, 2013-10-09.

[259] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种室温检测NH 3 的气体传感器的制作方法. 中国: CN103308560A, 2013-09-18.

[260] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种制备花瓣形掺杂氧化镍的二氧化锡的方法. CN: CN103274452A, 2013-09-04.

[261] 姚志宏, 余兆安, 吕杭炳, 霍宗亮, 谢常青, 刘明. 一种对阻变存储器阵列进行测试的系统. CN: CN104217766A, 2014-12-17.

[262] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种室温检测NH 3 的气体传感器的制作方法. CN: CN103308560A, 2013-09-18.

[263] 余兆安, 姚志宏, 霍宗亮, 龙世兵, 谢常青, 刘明. 过压过流保护元件及过压过流保护电路. CN: CN104218552A, 2014-12-17.

[264] 谢常青, 付杰, 朱效立, 李海亮, 刘明. 一种增加石英片表面刻蚀粗糙度的方法. CN: CN104176943A, 2014-12-03.

[265] 霍宗亮, 刘明. 一种抬升共源区的NOR型闪存单元及其制备方法. CN: CN104124248A, 2014-10-29.

[266] 姬濯宇, 郭经纬, 刘明, 王龙, 陆丛研, 王伟, 李泠. 一种聚合物电极的制备方法. CN: CN104103758A, 2014-10-15.

[267] 姬濯宇, 郭经纬, 王龙, 陆丛研, 王伟, 李泠, 刘明. 一种有机电极的制备方法. CN: CN104103757A, 2014-10-15.

[268] 刘琦, 刘明, 龙世兵, 吕杭炳, 王艳. 用于双极型阻变存储器交叉阵列集成方式的选通器件单元. CN: CN103137646A, 2013-06-05.

[269] 李冬梅, 陈鑫, 梁圣法, 詹爽, 张培文, 谢常青, 刘明. 基于置换反应-热氧化方法制备复合半导体敏感膜的方法. CN: CN103074627A, 2013-05-01.

[270] 李冬梅, 陈鑫, 梁圣法, 牛洁斌, 张培文, 刘宇, 李小静, 詹爽, 张浩, 罗庆, 谢常青, 刘明. 一种制备原位掺杂Pt的NiO有序纳米线阵列的方法. CN: CN103072942A, 2013-05-01.

[271] 李冬梅, 詹爽, 梁圣法, 陈鑫, 李小静, 张浩, 罗庆, 谢常青, 刘明. 在常温下检测气体的基于柔性衬底的敏感膜的制备方法. CN: CN103033539A, 2013-04-10.

[272] 李冬梅, 詹爽, 梁圣法, 陈鑫, 李小静, 张浩, 罗庆, 谢常青, 刘明. 在常温下检测气体的基于柔性衬底的敏感膜的制备方法. CN: CN103033538A, 2013-04-10.

[273] 李冬梅, 詹爽, 梁圣法, 陈鑫, 李小静, 张浩, 罗庆, 谢常青, 刘明. 一种基于柔性衬底的气体传感器敏感膜的制备方法. CN: CN103033537A, 2013-04-10.

[274] 李冬梅, 陈鑫, 梁圣法, 詹爽, 张培文, 路程, 谢常青, 刘明. 一种表面掺杂Au或Pt纳米晶的敏感膜的制备方法. CN: CN102965622A, 2013-03-13.

[275] 霍宗亮, 刘明. 一种垂直沟道型三维半导体存储器件及其制备方法. CN: CN103872055A, 2014-06-18.

[276] 吕杭炳, 刘明, 刘琦, 李颖弢, 龙世兵. 一种具有自整流特性的阻变存储器及其制备方法. CN: CN103633242A, 2014-03-12.

[277] 吕杭炳, 刘明, 刘琦, 李颖弢, 龙世兵. 一种电阻型存储器的制备方法. CN: CN103633243A, 2014-03-12.

[278] 刘明, 李颖弢, 龙世兵, 吕杭炳, 刘琦. 一种存储器器件. CN: CN103579238A, 2014-02-12.

[279] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳, 杨晓一, 孙鹏霄. 具有整流特性的阻变存储器器件及其制作法. CN: CN103579499A, 2014-02-12.

[280] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 一种存储器器件. CN: CN103579237A, 2014-02-12.

[281] 李冬梅, 陈鑫, 梁圣法, 詹爽, 谢常青, 刘明. 一种制备用于传感器的敏感材料的方法. CN: CN102818880A, 2012-12-12.

[282] 李冬梅, 陈鑫, 梁圣法, 詹爽, 谢常青, 刘明. 应用于气体传感器的原位还原法掺杂的敏感膜的制备方法. CN: CN102816995A, 2012-12-12.

[283] 李冬梅, 詹爽, 刘明, 谢常青, 梁圣法, 陈鑫. 基于柔性衬底的传感器膜材料的制备方法. CN: CN102798648A, 2012-11-28.

[284] 谢常青, 洪梅华, 史丽娜, 朱效立, 李海亮, 刘明. 一种基于自支撑光栅结构的传感器及其制备方法. CN: CN103543128A, 2014-01-29.

[285] 李冬梅, 陈鑫, 梁圣法, 詹爽, 谢常青, 刘明. 一种声表面波气体传感器多层敏感膜的制备方法. CN: CN102735753A, 2012-10-17.

[286] 李海亮, 谢常青, 刘明, 李冬梅, 牛洁斌, 史丽娜, 朱效立. 极紫外光刻掩模缺陷检测系统. CN: CN103424985A, 2013-12-04.

[287] 李冬梅, 刘明, 谢常青, 周文. 半导体薄膜、气体传感器及其制作方法. CN: CN102662002A, 2012-09-12.

[288] 李海亮, 谢常青, 刘明, 李冬梅, 牛洁斌, 史丽娜, 朱效立, 王子欧. 极紫外光刻掩模缺陷检测系统. CN: CN103365073A, 2013-10-23.

[289] 刘明, 姜丹丹, 霍宗亮, 张满红, 刘璟, 谢常青. 多位半导体存储器的编程方法. CN: CN103366811A, 2013-10-23.

[290] 刘明, 赵盛杰, 谢常青, 刘琦, 吕航炳, 张满红, 霍宗亮, 胡媛. 阻变存储器的制造方法. CN: CN103311433A, 2013-09-18.

[291] 王琴, 杨潇楠, 王永, 张满红, 霍宗亮, 刘明. 一种基于纳米晶的NAND存储器及其制作方法. CN: CN103296070A, 2013-09-11.

[292] 王琴, 杨潇楠, 王永, 张满红, 霍宗亮, 刘明. 2T纳米晶存储器阵列及其操作方法. CN: CN103295633A, 2013-09-11.

[293] 王琴, 杨潇楠, 王永, 张满红, 霍宗亮, 刘明. 纳米晶浮栅存储器阵列的编程方法. CN: CN103295636A, 2013-09-11.

[294] 谢长青, 翁永超, 朱效立, 高南, 刘明. 匀光器及其制作方法. CN: CN103293677A, 2013-09-11.

[295] 梁圣法, 李冬梅, 刘明, 谢常青, 陈鑫, 詹爽. 基于柔性衬底的气敏传感器及其制备方法. CN: CN103258954A, 2013-08-21.

[296] 霍宗亮, 刘明. 半导体存储器及其制造方法. 中国: CN103258860A, 2013-08-21.

[297] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作纳米尺度大高宽比器件的方法. CN: CN102608864A, 2012-07-25.

[298] 刘明, 王永, 王琴, 谢常青, 霍宗亮, 张满红. 一种去除硅纳米晶的方法. CN: CN103247527A, 2013-08-14.

[299] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作大高宽比X射线衍射光栅的方法. CN: CN102590915A, 2012-07-18.

[300] 刘明, 陆丛研, 姬濯宇, 商立伟, 王宏, 刘欣, 韩买兴, 陈映平. 一种有机薄膜晶体管及其制备方法. 中国: CN102544368A, 2012-07-04.

[301] 史丽娜, 谢常青, 牛洁斌, 李海亮, 刘明. 基于导波共振的传感器及传感器测试系统. CN: CN105044029A, 2015-11-11.

[302] 史丽娜, 杜宇禅, 谢常青, 牛洁斌, 李海亮, 李冬梅, 刘明. 基于导波共振的传感器及其制备方法. CN: CN103245635A, 2013-08-14.

[303] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 一种降低阻变存储器器件Reset电流的方法. CN: CN103247755A, 2013-08-14.

[304] 刘明, 谢宏伟, 龙世兵, 吕杭炳, 刘琦, 李颖弢, 谢长青. 隧穿二极管整流器件及其制造方法. CN: CN103247696A, 2013-08-14.

[305] 刘明, 许中广, 朱晨昕, 霍宗亮, 谢常青. 一种非易失性存储器及其制备方法. CN: CN103247629A, 2013-08-14.

[306] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳, 王明, 张康玮. 一种存储器器件及其阵列. CN: CN103247335A, 2013-08-14.

[307] 谢常青, 洪梅华, 朱效立, 李冬梅, 刘明. 一种测试透射光栅绝对衍射效率的方法. CN: CN103245487A, 2013-08-14.

[308] 刘明, 王晨杰, 霍宗亮, 张满红, 刘璟, 王永, 谢常青. 双栅电荷俘获存储器及其制作方法. CN: CN103247669A, 2013-08-14.

[309] 刘明, 刘阿鑫, 谢常青, 吕杭炳, 张君宇, 陈映平, 潘立阳. 一种CTS2电荷泵. CN: CN103219882A, 2013-07-24.

[310] 刘明, 许中广, 霍宗亮, 朱晨昕, 谢常青, 张满红. 一种金属纳米晶存储器的制备方法. CN: CN103178017A, 2013-06-26.

[311] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种四台阶光栅及其制备方法. CN: CN102495444A, 2012-06-13.

[312] 刘明, 许中广, 霍宗亮, 朱晨昕, 谢常青, 张满红. 一种金属纳米晶存储器. CN: CN103178062A, 2013-06-26.

[313] 李冬梅. 一种打印机. CN: CN103158360A, 2013-06-19.

[314] 李冬梅, 刘明, 谢常青, 霍宗亮, 姬濯宇. 一种喷墨打印机. 中国: CN103158352A, 2013-06-19.

[315] 刘明, 许中广, 霍宗亮, 朱晨昕, 谢常青. 混合存储器件及其控制方法、制备方法. CN: CN103165172A, 2013-06-19.

[316] 李海亮, 谢常青, 刘明, 史丽娜, 朱效立, 李冬梅. 一种制作用于极紫外光刻的铬侧墙衰减型移相掩模的方法. CN: CN103163726A, 2013-06-19.

[317] 刘明, 姜丹丹, 霍宗亮, 张满红, 刘璟, 谢常青. 一种多位非挥发存储单元及阵列的编程方法. CN: CN103165188A, 2013-06-19.

[318] 刘明, 王晨杰, 霍宗亮, 张满红, 刘璟, 谢常青, 王永. 一种闪存存储器及其制作方法. CN: CN103165612A, 2013-06-19.

[319] 霍宗亮, 刘明. 非易失性三维半导体存储器件及制备方法. CN: CN103137860A, 2013-06-05.

[320] 刘明, 姜丹丹, 霍宗亮, 张满红, 刘璟, 谢常青. 一种平面浮栅闪存器件及其制备方法. CN: CN103137626A, 2013-06-05.

[321] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 制备X射线衍射光学元件的方法. CN: CN102402118A, 2012-04-04.

[322] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 制备X射线衍射光学元件的方法. CN: CN102508411A, 2012-06-20.

[323] 霍宗亮, 刘明. 三维层叠存储器及其制造方法. CN: CN103137625A, 2013-06-05.

[324] 史丽娜, 李海亮, 杜宇禅, 牛洁斌, 朱效立, 李冬梅, 谢常青, 刘明. 生物传感器及其制造方法、生物传感器测试系统. CN: CN103105378A, 2013-05-15.

[325] 刘明, 张康玮, 龙世兵, 谢常青, 吕杭炳, 刘琦. 一次编程存储器及其制备方法. CN: CN103106926A, 2013-05-15.

[326] 冀永辉, 冯二媛, 刘明, 于兆安. 快闪存储器限流装置及应用该装置的快闪存储器. CN: CN103093811A, 2013-05-08.

[327] 李冬梅, 周文, 刘明, 谢常青, 侯成诚, 汪幸, 闫学锋. 声表面波气体传感器及其制作方法. CN: CN102507733A, 2012-06-20.

[328] 谢常青, 辛将, 朱效立, 刘明. 一种深度调制金属结构衍射光学元件及其设计方法. CN: CN103091750A, 2013-05-08.

[329] 谢常青, 辛将, 朱效立, 刘明. 一种用于极紫外光刻的衍射光学装置. CN: CN103091991A, 2013-05-08.

[330] 谢常青, 辛将, 朱效立, 刘明. 一种高透过率光子筛. CN: CN103091751A, 2013-05-08.

[331] 谢常青, 辛将, 朱效立, 刘明. 一种高透过率光子筛. CN: CN103091749A, 2013-05-08.

[332] 谢常青, 辛将, 朱效立, 刘明. 一种金属结构衍射光学元件及其设计方法. CN: CN103091839A, 2013-05-08.

[333] 刘明, 王晨杰, 霍宗亮, 张满红, 刘璟, 谢常青. 一种纳米晶存储器及其制作方法. CN: CN103094355A, 2013-05-08.

[334] 史丽娜, 李海亮, 杜宇禅, 朱效立, 李冬梅, 谢常青, 刘明. 表面等离子体共振样品台及其制备方法. CN: CN103018167A, 2013-04-03.

[335] 李海亮, 史丽娜, 朱效立, 李冬梅, 谢常青, 刘明. 光子筛及其制作方法. CN: CN103018808A, 2013-04-03.

[336] 李海亮, 史丽娜, 牛洁斌, 朱效立, 李冬梅, 谢常青, 刘明. 表面等离子体增强对称结构及其制备方法. CN: CN103018800A, 2013-04-03.

[337] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作大高宽比X射线衍射光栅的方法. CN: CN102289015A, 2011-12-21.

[338] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种阶梯型位相光栅的制作方法. CN: CN102331594A, 2012-01-25.

[339] 李海亮, 谢常青, 刘明, 李冬梅, 史丽娜, 朱效立. 一种亚波长极紫外金属透射光栅及其制作方法. CN: CN103018806A, 2013-04-03.

[340] 刘明, 陈映平, 冀永辉, 谢常青. 一种对存储器芯片进行擦除的方法. CN: CN103000224A, 2013-03-27.

[341] 刘明, 刘阿鑫, 谢常青, 霍宗亮, 张满红, 张君宇, 陈映平, 潘立阳. 一种消除阈值电压影响的电荷泵. CN: CN103001487A, 2013-03-27.

[342] 刘明, 郑志威, 霍宗亮, 谢常青, 张满红, 刘璟. 电荷俘获型非挥发存储器及其制备方法. CN: CN102983138A, 2013-03-20.

[343] 刘明, 姜丹丹, 霍宗亮, 张满红, 刘璟, 谢常青. 一种对多位半导体存储器进行编程的方法. CN: CN102969022A, 2013-03-13.

[344] 李海亮, 史丽娜, 朱效立, 李冬梅, 谢常青, 刘明. 一种基于周期性纳米介质颗粒的生物传感器及其制备方法. CN: CN102954950A, 2013-03-06.

[345] 谢常青, 辛将, 朱效立, 刘明. LED配光透镜曲面构造方法和LED配光透镜. CN: CN102287756A, 2011-12-21.

[346] 谢常青, 辛将, 朱效立, 刘明. LED配光透镜曲面构造方法和LED配光透镜. CN: CN102954437A, 2013-03-06.

[347] 谢常青, 高南, 华一磊, 朱效立, 李海亮, 史丽娜, 李冬梅, 刘明. 复合光子筛投影式光刻系统. CN: CN102289157A, 2011-12-21.

[348] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 一种纳米线忆阻器及其制作方法. CN: CN102931344A, 2013-02-13.

[349] 刘明, 李颖弢, 龙世兵, 吕杭炳, 刘琦. 忆阻器器件及其制备方法. CN: CN102931346A, 2013-02-13.

[350] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳, 王明, 张康玮. 阻变存储器及降低其形成电压的方法. CN: CN102931343A, 2013-02-13.

[351] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 一种基于柔性衬底的忆阻器器件及其制作方法. CN: CN102931345A, 2013-02-13.

[352] 刘明, 连文泰, 龙世兵, 吕杭炳, 刘琦, 谢常青. 阻变存储单元的编程方法. CN: CN102915762A, 2013-02-06.

[353] 刘明, 张君宇, 张满红, 霍宗亮, 谢常青, 潘立阳, 陈映平, 刘阿鑫. 一种用于大规模快闪存储器的灵敏放大器. CN: CN102890955A, 2013-01-23.

[354] 刘明, 张君宇, 张满红, 霍宗亮, 谢常青, 潘立阳, 陈映平, 刘阿鑫. 一种CMOS带隙基准电压源. CN: CN102890526A, 2013-01-23.

[355] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 一种采用滴涂法制作氧化锌掺杂酞菁靶敏感膜的方法. CN: CN102879466A, 2013-01-16.

[356] 李冬梅, 侯成诚, 闫学锋, 周文, 汪幸, 刘明, 谢常青. 一种用于检测多种气体的复合传感器. CN: CN102879439A, 2013-01-16.

[357] 李冬梅, 周文, 刘明, 谢常青, 侯成诚, 汪幸, 闫学锋. 一种Al 2 O 3 与聚苯胺复合敏感膜的制作方法. CN: CN102879465A, 2013-01-16.

[358] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 四乙醇乙二胺掺杂研磨的多壁碳纳米管敏感膜的制作方法. CN: CN102882485A, 2013-01-16.

[359] 李冬梅, 周文, 刘明, 谢常青, 侯成诚, 汪幸, 闫学锋. 一种Al 2 O 3 与聚苯胺复合敏感膜的制作方法. 中国: CN102879465A, 2013-01-16.

[360] 李冬梅, 周文, 刘明, 谢常青, 侯成诚, 汪幸, 闫学锋. 一种聚噻吩与氧化锆复合敏感膜的制作方法. CN: CN102879464A, 2013-01-16.

[361] 刘明, 连文泰, 龙世兵, 刘琦, 吕杭炳, 谢常青. 电阻转变存储器阵列及对其进行存储操作的方法. CN: CN102855928A, 2013-01-02.

[362] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 一种制作声表面波传感器二氧化钛掺杂酞菁铜敏感膜的方法. CN: CN102820867A, 2012-12-12.

[363] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作凹面型X射线聚焦小孔的方法. CN: CN102214492A, 2011-10-12.

[364] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 一种制作声表面波传感器双层敏感膜的方法. CN: CN102818839A, 2012-12-12.

[365] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 一种制作声表面波传感器二氧化锡掺杂酞菁锌敏感膜的方法. CN: CN102818840A, 2012-12-12.

[366] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作位相型波带片的方法. CN: CN102207569A, 2011-10-05.

[367] 刘明, 姜丹丹, 霍宗亮, 张满红, 王琴, 刘璟, 谢常青. 分裂栅存储器及其制造方法. CN: CN102810560A, 2012-12-05.

[368] 刘明, 王晨杰, 霍宗亮, 张满红, 王琴, 刘璟, 谢常青. 一种电荷俘获非挥发存储器的制造方法. CN: CN102800632A, 2012-11-28.

[369] 刘明. 一种半导体存储器件. CN: CN102800358A, 2012-11-28.

[370] 刘明, 王晨杰, 霍宗亮, 张满红, 王琴, 刘璟, 谢常青. 一种电荷俘获非挥发存储器及其制造方法. CN: CN102800675A, 2012-11-28.

[371] 刘明. 一种半导体存储器件. CN: CN102800359A, 2012-11-28.

[372] 刘明, 许中广, 霍宗亮, 张满红, 谢常青, 龙世兵, 李冬梅. 一种半导体存储器件. CN: CN102800358B, 2015-09-09.

[373] 李海亮, 史丽娜, 朱效立, 李冬梅, 谢常青, 刘明. 一种基于周期性纳米结构的生物传感器及其制备方法. CN: CN102798615A, 2012-11-28.

[374] 刘明, 刘欣, 姬濯宇, 商立伟, 谢常青, 李冬梅, 韩买兴, 陈映平, 王宏. 电容器件及其制造方法. CN: CN102790174A, 2012-11-21.

[375] 刘琦, 刘明, 龙世兵, 吕杭炳, 李颖涛, 王艳, 谢常青. 一种用于原位电学测试的透射电镜样品的制备方法. CN: CN102788723A, 2012-11-21.

[376] 刘明, 刘欣, 姬濯宇, 商立伟, 谢常青, 李冬梅, 韩买兴, 陈映平, 王宏. 有机存储器件、阵列及其制造方法. CN: CN102790173A, 2012-11-21.

[377] 刘宇, 刘明, 龙世兵, 谢常青, 胡媛. 一种改善真空获得和保持的装置及方法. CN: CN102784592A, 2012-11-21.

[378] 刘宇, 刘明, 龙世兵, 谢常青, 胡媛. 一种用于改善薄膜制备工艺的匀气装置. CN: CN102787302A, 2012-11-21.

[379] 刘宇, 刘明, 龙世兵, 谢常青, 胡媛. 一种用于改善刻蚀工艺的匀气装置. CN: CN102789962A, 2012-11-21.

[380] 刘明, 许中广, 霍宗亮, 谢常青, 龙世兵, 张满红, 李冬梅, 王琴, 刘璟, 朱晨昕. 多功能存储单元、阵列及其制造方法. CN: CN102779550A, 2012-11-14.

[381] 李冬梅, 侯成诚, 闫学峰, 周文, 汪幸, 刘明, 谢常青, 叶甜春. 一种声表面波气体传感器及其制造方法. CN: CN102778503A, 2012-11-14.

[382] 李冬梅, 刘明, 谢常青, 闫学峰, 叶甜春. 一种敏感吸附膜及其制造方法. CN: CN102774064A, 2012-11-14.

[383] 刘明, 连文泰, 龙世兵, 刘琦, 李颖弢, 张森, 王艳. 非挥发性半导体存储器及其存储操作方法. CN: CN102760492A, 2012-10-31.

[384] 刘琦, 刘明, 龙世兵, 吕杭炳, 谢常青. 阻变存储器单元. CN: CN102750979A, 2012-10-24.

[385] 李海亮, 史丽娜, 朱效立, 李冬梅, 谢常青, 刘明. 一种偶次级透射光栅. CN: CN102736152A, 2012-10-17.

[386] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 具有忆阻器特性的半导体器件及其实现多级存储的方法. CN: CN102738388A, 2012-10-17.

[387] 刘明, 李颖弢, 龙世兵, 刘琦, 张森, 王艳, 连文泰. 一种基于TiOx结构的忆阻器及其制备方法. CN: CN102738387A, 2012-10-17.

[388] 刘明, 李颖弢, 龙世兵, 吕杭炳, 刘琦, 张森, 王艳. 一种具有忆阻器特性的半导体器件及其制备方法. CN: CN102738389A, 2012-10-17.

[389] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种对纳米尺度元件进行套刻的方法. CN: CN102736432A, 2012-10-17.

[390] 刘琦, 刘明, 龙世兵, 吕杭炳, 张森, 李颖涛, 王艳, 连文泰, 谢常青. 阻变存储器及其制造方法. CN: CN102738386A, 2012-10-17.

[391] 刘明, 刘明, 龙世兵, 谢常青, 刘琦, 吕杭炳. 阻变存储器及其制造方法. CN: CN102738386A, 2012-10-17.

[392] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 铁电型存储单元、存储器及其制备方法. CN: CN102723436A, 2012-10-10.

[393] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 基于有机场效应晶体管的存储单元、存储器及其制备方法. CN: CN102723439A, 2012-10-10.

[394] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 有机阻变型存储单元、存储器及其制备方法. CN: CN102723438A, 2012-10-10.

[395] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 光存储单元、光存储器及其制备方法. CN: CN102723437A, 2012-10-10.

[396] 刘明, 张康玮, 龙世兵. 阻变存储器及其制造方法. CN: CN102694118A, 2012-09-26.

[397] 刘明, 许中广, 霍宗亮, 谢常青, 龙世兵, 李冬梅, 朱晨昕. 一种多值非挥发存储器及其制备方法. CN: CN102693984A, 2012-09-26.

[398] 吕杭炳, 刘明, 龙世兵, 刘琦, 王艳花, 牛洁斌. 集成标准CMOS工艺的电阻存储器及其制备方法. CN: CN102683585A, 2012-09-19.

[399] 刘明, 连文泰, 龙世兵, 吕杭炳, 刘琦, 李颖弢, 张森, 王艳. 提高非挥发性电阻存储器可靠性的方法及结构. CN: CN102682840A, 2012-09-19.

[400] 吕杭炳, 刘明, 龙世兵, 刘琦, 王艳花, 牛洁斌. 集成标准CMOS工艺的金属氧化物电阻存储器及其制备方法. CN: CN102683584A, 2012-09-19.

[401] 谢常青, 辛将, 朱效立, 刘明. 一种光子筛结构. CN: CN102681059A, 2012-09-19.

[402] 谢常青, 辛将, 朱效立, 刘明. 一种复合型波带片光子筛. CN: CN102681060A, 2012-09-19.

[403] 谢常青, 辛将, 朱效立, 刘明. 一种消除色差的波带片结构. CN: CN102681062A, 2012-09-19.

[404] 谢常青, 辛将, 朱效立, 刘明. 一种带调焦系统的衍射光学元件. CN: CN102681061A, 2012-09-19.

[405] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 有机场效应晶体管存储器的编程方法. CN: CN102682838A, 2012-09-19.

[406] 谢常青, 辛将, 朱效立, 刘明. 呈矩形光斑均匀分布的LED二次配光透镜的实现方法. CN: CN102679266A, 2012-09-19.

[407] 谢常青, 辛将, 朱效立, 刘明. 一种利用自由曲面透镜实现光束匀光控制的方法. CN: CN102679265A, 2012-09-19.

[408] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 霍宗亮, 张满红. 一种制作声表面波传感器敏感膜的方法. CN: CN102680572A, 2012-09-19.

[409] 李海亮, 谢常青, 朱效立, 史丽娜, 刘明. 基于纳米岛衬底制备大高宽比X射线衍射光学元件的方法. CN: CN102683167A, 2012-09-19.

[410] 李海亮, 谢常青, 牛洁斌, 朱效立, 史丽娜, 刘明. 一种基于湿法腐蚀制备位相型衍射光学元件的方法. CN: CN102681335A, 2012-09-19.

[411] 商立伟, 姬濯宇, 刘明. 一种有机场效应晶体管结构及其制备方法. CN: CN102683588A, 2012-09-19.

[412] 商立伟, 姬濯宇, 刘明. 一种制备有机场效应晶体管结构的方法. CN: CN102683592A, 2012-09-19.

[413] 商立伟, 姬濯宇, 刘明. 一种制备有机场效应晶体管结构的方法. CN: CN102683591A, 2012-09-19.

[414] 李冬梅, 刘明, 谢常青, 霍宗亮, 张满红, 龙世兵. 一种表面波NO 2 气体传感器敏感薄膜的制备方法. CN: CN102655401A, 2012-09-05.

[415] 霍宗亮, 朱晨昕, 刘明, 李冬梅, 张满红, 王琴, 刘璟. 电荷俘获型栅堆栈及存储单元. CN: CN102655167A, 2012-09-05.

[416] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 叶甜春, 霍宗亮, 张满红. 一种制作声表面波气体传感器双层敏感膜的方法. CN: CN102655397A, 2012-09-05.

[417] 李冬梅, 周文, 刘明, 侯成诚, 汪幸, 闫学锋, 谢常青, 霍宗亮, 张满红, 龙世兵. 一种石墨烯掺杂氧化锌的纳米薄膜的制作方法. CN: CN102654474A, 2012-09-05.

[418] 商立伟, 姬濯宇, 刘明. 一种有机场效应晶体管结构及其制备方法. 中国: CN102655216A, 2012-09-05.

[419] 商立伟, 姬濯宇, 刘明. 一种有机场效应晶体管结构及其制备方法. CN: CN102655216A, 2012-09-05.

[420] 商立伟, 姬濯宇, 刘明. 有机场效应晶体管结构及其制备方法. CN: CN102655215A, 2012-09-05.

[421] 李冬梅, 刘明, 谢常青, 霍宗亮, 张满红, 龙世兵. 一种表面波NO 2 气体传感器敏感薄膜的制备方法. 中国: CN102655401A, 2012-09-05.

[422] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 叶甜春, 霍宗亮, 龙世兵. 一种制作声表面波传感器敏感膜的方法. CN: CN102654480A, 2012-09-05.

[423] 刘明, 许中广, 霍宗亮, 谢常青, 龙世兵, 张满红, 李冬梅, 王琴, 刘璟. 复合存储单元和存储器. CN: CN102651233A, 2012-08-29.

[424] 刘琦, 刘明, 龙世兵, 吕杭炳. 阻变型随机存储单元及存储器. CN: CN102623045A, 2012-08-01.

[425] 刘琦, 刘明, 龙世兵, 吕杭炳, 张森, 李颖涛, 王艳, 连文泰. 阻变型随机存储单元、存储器及制备方法. CN: CN102623631A, 2012-08-01.

[426] 冀永辉, 丁川, 王凤虎, 刘明. 一种半导体存储器件的复位方法. CN: CN102623059A, 2012-08-01.

[427] 霍宗亮, 刘明, 刘璟, 王艳花, 龙世兵. 非挥发性存储单元及存储器. CN: CN102610748A, 2012-07-25.

[428] 霍宗亮, 刘明, 张满红, 王艳花. 阻变型随机存储单元及存储器. CN: CN102610749A, 2012-07-25.

[429] 冀永辉, 王凤虎, 丁川, 余兆安, 王琴, 龙世兵, 刘明. 一种基于差分技术的消除成像器件阈值偏差影响的方法. CN: CN102611852A, 2012-07-25.

[430] 冀永辉, 丁川, 王凤虎, 余兆安, 王琴, 龙世兵, 刘明. 一种光学传感器及其内部的成像器件. CN: CN102610620A, 2012-07-25.

[431] 刘明, 金林, 霍宗亮, 刘璟, 张满红, 王琴. 纳米晶浮栅存储器及其制备方法. CN: CN102610653A, 2012-07-25.

[432] 霍宗亮, 姜丹丹, 刘明, 张满红, 王琴, 刘璟, 李冬梅. 一种非挥发性存储器件的编程方法. CN: CN102610277A, 2012-07-25.

[433] 刘明, 连文泰, 龙世兵, 吕杭炳, 刘琦. 提高非易失性电阻转变存储器均一性的方法. CN: CN102610747A, 2012-07-25.

[434] 刘明, 连文泰, 龙世兵, 吕杭炳, 刘琦. 非挥发性电阻转变存储器. CN: CN102610746A, 2012-07-25.

[435] 谢常青, 辛将, 朱效立, 潘一鸣, 刘明. 大高宽比光子筛及其制备方法. CN: CN102608687A, 2012-07-25.

[436] 谢常青, 辛将, 朱效立, 高南, 刘明. 制备大高宽比结构器件的方法. CN: CN102608862A, 2012-07-25.

[437] 刘明, 王明, 吕杭炳, 刘琦, 龙世兵. 一种阻变存储器单元的编程或擦除方法及装置. CN: CN102610272A, 2012-07-25.

[438] 刘明, 连文泰, 龙世兵, 刘琦, 李颖弢, 张森, 王艳. 编程电阻存储单元的方法和装置. CN: CN102592667A, 2012-07-18.

[439] 刘琦, 刘明, 龙世兵, 吕杭炳, 谢常青. 一种Si x N y 基电阻型存储器及其制备方法和应用. 中国: CN102593349A, 2012-07-18.

[440] 刘琦, 刘明, 龙世兵, 吕杭炳, 谢常青. 一种Si x N y 基电阻型存储器及其制备方法和应用. CN: CN102593349A, 2012-07-18.

[441] 刘琦, 刘明, 龙世兵, 吕杭炳, 王艳花, 王艳, 张森, 李颖涛. 忆阻器及其制作方法. CN: CN102544359A, 2012-07-04.

[442] 霍宗亮, 刘明. 制备三维半导体存储器件的方法. CN: CN102543877A, 2012-07-04.

[443] 刘明, 张康玮, 龙世兵, 刘琦, 吕杭炳, 王艳花. 一种双极晶体管选通的阻变存储器、阵列及其制造方法. CN: CN102544076A, 2012-07-04.

[444] 霍宗亮, 刘明. 阻变随机存储装置及系统. CN: CN102569334A, 2012-07-11.

[445] 霍宗亮, 刘明. 三维半导体存储器件及其制备方法. CN: CN102544049A, 2012-07-04.

[446] 刘明, 王艳, 龙世兵, 吕杭炳, 刘琦, 李颖涛, 张森, 连文泰. 一种电阻转变型存储器的制造方法. CN: CN102544357A, 2012-07-04.

[447] 刘明, 朱晨昕, 霍宗亮, 闫峰, 王艳花, 王琴, 龙世兵. 一种三维多值非挥发存储器的制备方法. CN: CN102569203A, 2012-07-11.

[448] 叶甜春, 闫学锋, 李冬梅, 刘明, 侯成诚, 周文, 汪幸, 谢常青, 霍宗亮, 张满红, 龙世兵. 一种用于声表面波传感器的半导体薄膜的成膜方法. CN: CN102558583A, 2012-07-11.

[449] 龙世兵, 刘明, 刘琦, 吕杭炳, 李颖弢, 张森, 王艳, 连文泰, 张康玮, 王明, 张满红, 霍宗亮, 王琴, 刘璟, 余兆安, 李冬梅. 非挥发性电阻转变存储器及其制备方法. CN: CN102487122A, 2012-06-06.

[450] 龙世兵, 刘明, 刘琦, 吕杭炳, 陈宝钦, 牛洁斌, 王艳花, 张康玮. 一种纳米尺度非挥发性阻变存储器单元及其制备方法. CN: CN102487123A, 2012-06-06.

[451] 龙世兵, 刘明, 谢常青, 陈宝钦, 徐连生, 胡媛. 多功能离子束溅射与刻蚀及原位物性分析系统. CN: CN102486465A, 2012-06-06.

[452] 霍宗亮, 刘明, 刘璟. 具有高变比能力的电阻转变存储器结构及其制备方法. CN: CN102479925A, 2012-05-30.

[453] 霍宗亮, 刘明, 刘璟, 张满红. 一种垂直型NROM存储结构及其制备方法. CN: CN102479823A, 2012-05-30.

[454] 刘明, 张森, 刘琦, 龙世兵. 一种对电阻存储器进行编程的电路. CN: CN102479546A, 2012-05-30.

[455] 刘明, 韩买兴, 姬濯宇, 商立伟, 刘欣, 王宏. 场效应晶体管及其制备方法. 中国: CN102479820A, 2012-05-30.

[456] 谢常青, 潘一鸣, 朱效立, 刘明. 无掩膜光刻装置. CN: CN102478767A, 2012-05-30.

[457] 谢常青, 李海亮, 史丽娜, 朱效立, 刘明. 一种大高宽比衍射光学元件的制作方法. CN: CN102466967A, 2012-05-23.

[458] 谢常青, 辛将, 朱效立, 高南, 刘明. 一种制作大高宽比光子筛的方法. CN: CN102466832A, 2012-05-23.

[459] 谢常青, 李海亮, 朱效立, 刘明. 基于电子束光刻和X射线曝光制作多层膜闪耀光栅的方法. CN: CN102466980A, 2012-05-23.

[460] 霍宗亮, 刘明, 金林, 刘璟, 张满红, 李冬梅. 一种半导体存储单元、器件及其制备方法. CN: CN102468342A, 2012-05-23.

[461] 霍宗亮, 刘明. 半导体存储单元、器件及其制备方法. CN: CN102468303A, 2012-05-23.

[462] 霍宗亮, 刘明, 张满红. 非挥发性半导体存储单元、器件及制备方法. CN: CN102456746A, 2012-05-16.

[463] 霍宗亮, 刘明. 一种无电容型动态随机访问存储器结构及其制备方法. CN: CN102376715A, 2012-03-14.

[464] 谢常青, 潘一鸣, 朱效立, 贾佳, 刘明. 一种复合型波带片光子筛. CN: CN102375169B, 2013-06-19.

[465] 李冬梅, 刘明, 谢常青, 叶甜春, 阎学锋, 霍宗亮, 龙世兵, 张满红. 一种换能器薄膜的制作方法. CN: CN102378100A, 2012-03-14.

[466] 李冬梅, 侯成诚, 刘明, 周文, 汪幸, 闫学锋, 谢常青, 霍宗亮. 一种制作复合半导体薄膜材料的方法. CN: CN102373470A, 2012-03-14.

[467] 叶甜春, 闫学锋, 李冬梅, 刘明, 侯成诚, 周文, 汪幸. 一种制作高选择性半导体薄膜方法. CN: CN102375028A, 2012-03-14.

[468] 李冬梅, 周文, 刘明, 侯成诚, 汪幸, 闫学锋, 谢常青, 霍宗亮. 一种制作高选择性半导体薄膜材料的方法. CN: CN102375029A, 2012-03-14.

[469] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 霍宗亮. 一种制作半导体薄膜材料的方法. CN: CN102375030A, 2012-03-14.

[470] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 霍宗亮. 一种制作半导体薄膜的方法. CN: CN102376889A, 2012-03-14.

[471] 李冬梅, 刘明, 谢常青, 叶甜春, 阎学锋, 霍宗亮, 龙世兵, 张满红. 一种高选择性半导体薄膜的制作方法. CN: CN102376890A, 2012-03-14.

[472] 刘明, 朱晨昕, 霍宗亮, 王琴, 龙世兵. 一种三维多值非挥发存储器结构. CN: CN102347332A, 2012-02-08.

[473] 霍宗亮, 刘明. 具有高速低压操作的高可靠分裂栅非挥发性存储器结构. CN: CN102339833A, 2012-02-01.

[474] 谢常青, 潘一鸣, 朱效立, 刘明. 一种光子筛. CN: CN102313918A, 2012-01-11.

[475] 霍宗亮, 刘明, 姜丹丹, 龙世兵, 王琴. 高性能平面浮栅闪存器件结构及其制作方法. CN: CN102315223A, 2012-01-11.

[476] 谢常青, 潘一鸣, 朱效立, 刘明. 采用HSQ工艺制作位相型二元衍射光学元件的方法. CN: CN102313917A, 2012-01-11.

[477] 刘明, 朱晨昕, 霍宗亮, 闫锋, 王琴, 龙世兵. 三维多值非挥发存储器的制备方法. CN: CN102315173A, 2012-01-11.

[478] 刘明, 朱晨昕, 霍宗亮, 闫锋, 王琴, 龙世兵. 三维高速高密度非挥发存储器. CN: CN102315222A, 2012-01-11.

[479] 霍宗亮, 钟浩, 王琴, 龙世兵, 刘明. 一种混合型非易失存储单元及其制作方法. CN: CN102263137A, 2011-11-30.

[480] 商立伟, 刘明, 姬濯雨. 一种有机场效应晶体管及其制备方法. 中国: CN102263201A, 2011-11-30.

[481] 商立伟, 刘明, 姬濯雨. 一种有机场效应晶体管及其制备方法. CN: CN102263200A, 2011-11-30.

[482] 李冬梅, 侯成诚, 闫学峰, 刘明, 谢常青, 周文, 汪幸. 预浓缩器热交换处理方法及装置. CN: CN102243149A, 2011-11-16.

[483] 王琴, 柳江, 刘明. 一种降低存储器读干扰的电路及方法. CN: CN102237131A, 2011-11-09.

[484] 冀永辉, 丁川, 刘明, 王琴, 龙世兵, 闫锋. 一种光学成像器件结构. CN: CN102214663A, 2011-10-12.

[485] 冀永辉, 王风虎, 刘明, 王琴, 龙世兵, 闫锋. 一种消除成像器件工艺失配和成像非线性影响的方法. CN: CN102213614A, 2011-10-12.

[486] 龙世兵, 刘明, 陈宝钦, 谢常青, 李友, 李新涛, 张建宏, 张卫红, 王冠亚, 谢文妞. 一种增强光学掩模分辨率及制造高分辨率光学掩模的方法. CN: CN102213913A, 2011-10-12.

[487] 商立伟, 姬濯宇, 刘明. 一种低电压有机薄膜晶体管及其制备方法. CN: CN102117887A, 2011-07-06.

[488] 王琴, 杨潇楠, 刘明, 王永. 基于纳米晶浮栅结构的多值非挥发性存储器的存储方法. CN: CN102117656A, 2011-07-06.

[489] 王琴, 杨潇楠, 刘明, 王永. 一种基于应变硅的纳米晶非挥发性存储器及其制作方法. CN: CN102117812A, 2011-07-06.

[490] 王琴, 杨潇楠, 刘明, 王永. 一种基于纳米晶的平行栅OTP存储器. CN: CN102117811A, 2011-07-06.

[491] 商立伟, 姬濯宇, 刘明. 一种闭环式有机场效应晶体管及其制作方法. CN: CN102117888A, 2011-07-06.

[492] 王琴, 杨潇楠, 刘明, 王永. 一种用于OTP外围电路的电平转换电路及转换方法. CN: CN102118156A, 2011-07-06.

[493] 王琴, 刘璟, 龙世兵, 刘明. 一种电荷俘获型非易失存储器及其制作方法. CN: CN102117810A, 2011-07-06.

[494] 王琴, 柳江, 刘明. 一种存储器读出电路. CN: CN102117644A, 2011-07-06.

[495] 王琴, 刘璟, 龙世兵, 刘明. 一种电荷俘获型非易失存储器及其制作方法. CN: CN102117838A, 2011-07-06.

[496] 商立伟, 刘明, 姬濯宇. 有机场效应晶体管阈值电压的调制方法. CN: CN102104113A, 2011-06-22.

[497] 刘明, 王宏, 姬濯宇, 商立伟, 刘兴华. 顶接触结构有机场效应晶体管的制备方法. CN: CN102104112A, 2011-06-22.

[498] 王琴, 柳江, 刘明. 一种存储器读出电路以及存储器. CN: CN102081959A, 2011-06-01.

[499] 谢常青, 潘一鸣, 朱效立, 贾佳, 刘明. 一种方孔光子筛及其制作方法. CN: CN102073084A, 2011-05-25.

[500] 刘明, 王宏, 姬濯宇, 商立伟, 刘兴华. 一种有机二极管器件及其制备方法. CN: CN102074653A, 2011-05-25.

[501] 刘明, 左青云, 龙世兵. 一次编程存储器的多值存储方法. CN: CN102074270A, 2011-05-25.

[502] 谢常青, 潘一鸣, 朱效立, 贾佳, 刘明. 用于大口径成像的复合型光子筛及其制作方法. CN: CN102043178A, 2011-05-04.

[503] 刘明, 左青云, 龙世兵. 一种基于阻变存储器的一次编程存储器及其制备方法. CN: CN101667460A, 2010-03-10.

[504] 贾佳, 谢长青, 刘明. 一种制作阵列部分环带光子筛匀光器的方法. CN: CN102681170A, 2012-09-19.

[505] 贾佳, 谢长青, 刘明. 阵列3环多值位相环匀光器及其制作方法. CN: CN102023390A, 2011-04-20.

[506] 贾佳, 谢长青, 刘明. 阵列光子筛匀光器及其制作方法. CN: CN102023388A, 2011-04-20.

[507] 贾佳, 谢长青, 刘明. 阵列部分环带光子筛匀光器及其制作方法. CN: CN102023389A, 2011-04-20.

[508] 贾佳, 谢长青, 刘明. 阵列环带光子筛匀光器及其制作方法. CN: CN102023387A, 2011-04-20.

[509] 贾佳, 谢长青, 刘明. 阵列3环2值位相环匀光器及其制作方法. CN: CN102023391A, 2011-04-20.

[510] 贾佳, 谢长青, 刘明. 阵列2环位相环匀光器及其制作方法. CN: CN102023392A, 2011-04-20.

[511] 贾佳, 谢长青, 刘明. 阵列全环光子筛匀光器及其制作方法. CN: CN102023386A, 2011-04-20.

[512] 朱效立, 潘一鸣, 谢常青, 贾 佳, 刘明. 一种大口径成像光子筛及其制作方法. CN: CN101630027A, 2010-01-20.

[513] 朱效立, 宋曦, 刘宇, 谢常青, 刘明. 采用PECVD制备碳化硅薄膜的方法. CN: CN101985743A, 2011-03-16.

[514] 朱效立, 宋曦, 陈晨, 谢常青, 刘明. 一种制备非晶碳化硅薄膜的方法. CN: CN101985732A, 2011-03-16.

[515] 刘明, 张森, 刘琦, 龙世兵. 一种实现多值电阻存储器的方法. CN: CN101964395A, 2011-02-02.

[516] 赵珉, 陈宝钦, 刘明, 牛洁斌. 一种扫描电镜放大倍率校准标准样品的制作方法. CN: CN101598645A, 2009-12-09.

[517] 贾锐, 陈晨, 李维龙, 刘明, 叶甜春. 一种制备非晶硅薄膜的方法. CN: CN101928918A, 2010-12-29.

[518] 朱效立, 宋曦, 刘宇, 谢常青, 刘明. 一种制备碳化硅薄膜的方法. CN: CN101928933A, 2010-12-29.

[519] 贾佳, 潘一鸣, 谢常青, 朱效立, 刘明. 基于HSQ工艺的制作位相型光子筛的方法. CN: CN101923182A, 2010-12-22.

[520] 刘明, 李颖弢, 龙世兵, 王琴, 刘琦, 张森, 王艳, 左青云. 一种掺杂ZrO 2 阻变存储器及其制作方法. CN: CN101577308A, 2009-11-11.

[521] 刘明, 左青云, 龙世兵. 一次编程存储器及其制造方法. CN: CN101577311A, 2009-11-11.

[522] 刘明, 李颖弢, 龙世兵, 王琴, 刘琦, 张森, 王艳, 左青云. 一种电阻转变型存储器及其制作方法. CN: CN101577310A, 2009-11-11.

[523] 刘明, 李颖弢, 龙世兵, 王琴, 左青云, 王艳, 刘琦, 张森. 一种二元金属氧化物阻变存储器及其制作方法. CN: CN101587937A, 2009-11-25.

[524] 刘明, 王永, 王琴, 杨潇楠, 龙世兵, 谢常青. 一种基于氮化处理的纳米晶浮栅存储器的制备方法. CN: CN101556938A, 2009-10-14.

[525] 刘明, 左青云, 龙世兵. 一种用于交叉阵列结构存储器的整流器件. CN: CN101882628A, 2010-11-10.

[526] 龙世兵, 刘明, 陈宝钦, 谢常青, 贾锐, 徐连生. 多功能离子束溅射设备. CN: CN101880862A, 2010-11-10.

[527] 龙世兵, 刘明, 陈宝钦, 谢常青, 贾锐, 徐连生. 多功能离子束溅射沉积与刻蚀设备. CN: CN101880863A, 2010-11-10.

[528] 贾锐, 朱晨昕, 陈晨, 李维龙, 李昊峰, 张培文, 刘明, 刘新宇, 叶甜春. 一种制作晶硅高效太阳能电池的方法. CN: CN101882643A, 2010-11-10.

[529] 贾佳, 谢常青, 刘明. 环带光子筛及其制作方法. CN: CN101881844A, 2010-11-10.

[530] 刘明, 刘琦, 龙世兵, 王艳, 张森. 一种电阻式非易失存储器件及其制作方法. CN: CN101872836A, 2010-10-27.

[531] 李冬梅, 刘明. 一种蓝宝石声表面波换能器的制作方法. CN: CN101540591A, 2009-09-23.

[532] 谢常青, 马杰, 朱效立, 刘明, 陈宝钦, 叶甜春. 带有通孔的X射线光刻掩模. CN: CN101846874A, 2010-09-29.

[533] 赵珉, 陈宝钦, 刘明, 牛洁斌. 一种电子束曝光散射参数的提取方法. CN: CN101510050B, 2011-09-07.

[534] 贾锐, 李维龙, 陈晨, 朱晨昕, 李昊峰, 张培文, 刘明. 一种单电子存储器的制备方法. CN: CN101521181A, 2009-09-02.

[535] 陈晨, 贾锐, 朱晨昕, 李维龙, 李昊峰, 张培文, 赵盛杰, 刘明. 硅基纳米柱阵列异质结薄膜太阳能电池及其制备方法. CN: CN101521239A, 2009-09-02.

[536] 贾锐, 朱晨昕, 陈晨, 李维龙, 张培文, 李昊峰, 刘明. 利用传统工艺制备双面PN结晶硅太阳能电池的方法. CN: CN101840954A, 2010-09-22.

[537] 贾锐, 李维龙, 朱晨昕, 陈晨, 张培文, 刘明, 刘新宇, 叶甜春. 基于硅量子点超晶格结构的晶硅太阳能电池的制备方法. CN: CN101840955A, 2010-09-22.

[538] 贾锐, 朱晨昕, 陈晨, 李维龙, 张培文, 刘明, 刘新宇, 叶甜春. 一种制备表面混合调制晶硅太阳能电池的方法. CN: CN101840953A, 2010-09-22.

[539] 贾锐, 朱晨昕, 陈晨, 李维龙, 张培文, 李昊峰, 赵盛杰, 刘明. 一种制备双面PN结太阳能电池的方法. CN: CN101840952A, 2010-09-22.

[540] 刘明, 王永, 王琴, 杨潇楠. 一种在线检测硅纳米晶形态的方法. CN: CN101813624A, 2010-08-25.

[541] 刘明, 王永, 王琴, 杨潇楠. 一种多层浮栅非易失性存储器结构及其制作方法. CN: CN101814505A, 2010-08-25.

[542] 刘明, 王永, 王琴, 杨潇楠. 一种复合存储介质浮栅存储器结构及其制作方法. CN: CN101814506A, 2010-08-25.

[543] 刘明, 杨仕谦, 王琴, 龙世兵. 钨钛合金纳米晶浮栅结构及其制备方法. CN: CN101494237A, 2009-07-29.

[544] 刘明, 刘璟, 王琴, 龙世兵. 一种制备浮栅型非易失性存储器中复合俘获层的方法. CN: CN101814430A, 2010-08-25.

[545] 柳江, 刘明, 姬濯宇, 陈宝钦. 一种图形挖空方法. CN: CN101814189A, 2010-08-25.

[546] 刘明, 刘璟, 王琴, 龙世兵. 浮栅型非易失性存储器中复合俘获层的制备方法. CN: CN101807521A, 2010-08-18.

[547] 刘明, 刘璟, 王琴, 胡媛. 纳米晶浮栅非易失存储器及其制作方法. CN: CN101807576A, 2010-08-18.

[548] 龙世兵, 刘明, 李维龙, 贾锐. 用纳米晶材料作为库仑岛的纳米电子器件及其制作方法. CN: CN101800242A, 2010-08-11.

[549] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 对有机场效应晶体管中有源层进行原位保护的方法. CN: CN101800283A, 2010-08-11.

[550] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 双层上电极有机场效应晶体管的制作方法. CN: CN101800284A, 2010-08-11.

[551] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 采用体有源层材料作为前驱体诱导有源层有序生长的方法. CN: CN101800285A, 2010-08-11.

[552] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种平面结构有机场效应晶体管的制作方法. CN: CN101800287A, 2010-08-11.

[553] 刘明, 杨仕谦, 王琴, 龙世兵. 一种制作复合俘获层的方法. CN: CN101800169A, 2010-08-11.

[554] 姬濯宇, 王宏, 刘明, 商立伟. 基于顶栅结构有机场效应晶体管集成电路的制备方法. CN: CN101800286A, 2010-08-11.

[555] 柳江, 刘明, 姬濯宇, 涂德钰, 刘兴华, 商立伟, 刘舸, 王宏. 阻变存储器的检测电路及检测设备. CN: CN101783182A, 2010-07-21.

[556] 余兆安, 龙世兵, 刘明, 张森, 刘琦, 柳江. 一种用于测试阻变存储器性能指标的限流电路. CN: CN101783183A, 2010-07-21.

[557] 刘明, 左青云, 龙世兵. 一种具有非对称电学特性的阻变存储器. CN: CN101783389A, 2010-07-21.

[558] 刘明, 张森, 龙世兵, 刘琦. 驱动电阻转变型存储器实现多值存储的电路及方法. CN: CN101783170A, 2010-07-21.

[559] 余兆安, 贾锐, 龙世兵, 刘明, 陈晨. 产生磁场的装置及对低温探针台外加磁场的方法. CN: CN101783223A, 2010-07-21.

[560] 商立伟, 刘明, 姬濯宇, 刘舸, 刘兴华, 柳江. 一种图形化有机场效应晶体管有源层的制备方法. CN: CN101783393A, 2010-07-21.

[561] 商立伟, 刘明, 姬濯宇, 刘舸, 刘兴华, 柳江. 有机双极型晶体管及其制备方法. CN: CN101783363A, 2010-07-21.

[562] 刘明, 刘琦, 龙世兵, 管伟华. 带有自整流效应的非易失电阻转变型存储器. CN: CN101783388A, 2010-07-21.

[563] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种对上电极进行费米能级修饰的方法. CN: CN101783394A, 2010-07-21.

[564] 龙世兵, 刘明, 李维龙, 贾锐. 一种纳米电子器件及其制作方法. CN: CN101783364A, 2010-07-21.

[565] 贾锐, 李维龙, 陈晨, 朱晨昕, 李昊峰, 刘明, 刘新宇. 低温探针台防热辐射铝箔屏及其制造方法. CN: CN101436438A, 2009-05-20.

[566] 刘明, 张森, 刘琦, 龙世兵. 电阻转变型存储器及其驱动装置和方法. CN: CN101441890B, 2011-11-30.

[567] 陈晨, 贾锐, 李维龙, 姚嘉宁, 朱晨昕, 李昊峰, 刘明, 刘新宇. 垂直可变磁场装置. CN: CN101446627A, 2009-06-03.

[568] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种底电极结构有机场效应晶体管的制作方法. CN: CN101752505A, 2010-06-23.

[569] 刘舸, 刘明, 刘光华, 商立伟, 王宏, 柳江. 一种制备有源层材料取向有序的有机场效应晶体管的方法. CN: CN101752502A, 2010-06-23.

[570] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种修饰有机场效应晶体管底电极的方法. CN: CN101752506A, 2010-06-23.

[571] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种制作底电极平坦化的有机场效应晶体管的方法. CN: CN101752507A, 2010-06-23.

[572] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种制备无过孔全有机场效应晶体管的方法. CN: CN101752504A, 2010-06-23.

[573] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 采用有源层图形化制备有机场效应晶体管的方法. CN: CN101752508A, 2010-06-23.

[574] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种制备过孔的方法. CN: CN101752300A, 2010-06-23.

[575] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种T形沟道的有机场效应晶体管的制作方法. CN: CN101752503A, 2010-06-23.

[576] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种制备混合接触型电极的有机场效应晶体管的方法. CN: CN101752501A, 2010-06-23.

[577] 刘明, 韩买兴. 数模混合多路独立控制开关电路. CN: CN101753121A, 2010-06-23.

[578] 刘明, 李颖弢, 龙世兵, 王琴, 王艳, 刘琦, 张森, 左青云. 电阻转变型存储器及其制造方法. CN: CN101425559A, 2009-05-06.

[579] 姬濯宇, 刘明, 商立伟, 王宏. 各向异性有机场效应管的制备方法. CN: CN101425563A, 2009-05-06.

[580] 姬濯宇, 商立伟, 刘明. 基于衬底修饰制备各向异性有机场效应管的方法. CN: CN101740721A, 2010-06-16.

[581] 刘明, 柳江, 姬濯宇, 陈宝钦. 一种在LEdit中绘制矢量字符的方法. CN: CN101739485A, 2010-06-16.

[582] 贾佳, 谢长青, 刘明. 超分辨菲涅耳波带片. CN: CN101430428A, 2009-05-13.

[583] 贾佳, 谢长青, 刘明. 超分辨光子筛. CN: CN101430427A, 2009-05-13.

[584] 商立伟, 刘明, 涂德钰, 刘舸, 刘兴华. 一种纳米级沟道有机场效应晶体管及其制备方法. CN: CN101425562A, 2009-05-06.

[585] 商立伟, 刘明, 涂德钰, 刘舸, 刘兴华. 管状栅电极垂直沟道有机场效应晶体管及其制备方法. CN: CN101447552A, 2009-06-03.

[586] 商立伟, 刘明, 涂德钰, 刘舸, 刘兴华. 一种垂直沟道有机场效应晶体管的制备方法. CN: CN101404321B, 2011-04-20.

[587] 陈晨, 贾锐, 朱晨昕, 李维龙, 李昊峰, 王琴, 刘明, 田继红, 路程. 氮化硅湿法腐蚀方法. CN: CN101417890A, 2009-04-29.

[588] 陈晨, 贾锐, 李维龙, 朱晨昕, 李昊峰, 刘明, 田继红, 路程. 高密度硅纳米晶薄膜的制备方法. CN: CN101414552A, 2009-04-22.

[589] 刘明, 管伟华, 龙世兵. 固态电解液阻变存储器及其制备方法. CN: CN101414658A, 2009-04-22.

[590] 赵珉, 陈宝钦, 刘明, 牛洁斌. 一种纳米尺度图形的制作方法. CN: CN101382733A, 2009-03-11.

[591] 朱晨昕, 贾锐, 陈晨, 李维龙, 李昊峰, 王琴, 刘明. 非挥发存储器的制备方法. CN: CN101399208A, 2009-04-01.

[592] 贾佳, 谢长青, 刘明. 振幅型波带片光子筛. CN: CN101398493A, 2009-04-01.

[593] 朱晨昕, 贾锐, 李维龙, 陈晨, 李昊峰, 王琴, 刘明. 非挥发存储器的制备方法. CN: CN101399209A, 2009-04-01.

[594] 赵以贵, 李晶晶, 朱效立, 牛洁斌, 刘明. 一种采用X射线曝光制作声表面波器件的方法. CN: CN101677231A, 2010-03-24.

[595] 赵以贵, 刘明, 牛洁斌. 采用电子束直写曝光制作声表面波器件的方法. CN: CN101676797A, 2010-03-24.

[596] 贾佳, 谢长青, 刘明. 全环光子筛及其制作方法. CN: CN101676750A, 2010-03-24.

[597] 商立伟, 刘明, 涂德钰, 甄丽娟, 刘舸, 刘兴华. 应用于有机电路的双金属电极结构及其制备方法. CN: CN101661993A, 2010-03-03.

[598] 贾佳, 谢长青, 刘明. 位相型波带片光子筛. CN: CN101661225A, 2010-03-03.

[599] 商立伟, 刘明, 涂德钰, 甄丽娟, 刘舸, 刘兴华. 金属环形栅有机晶体管结构及其制备方法. CN: CN101656295A, 2010-02-24.

[600] 赵珉, 朱效立, 陈宝钦, 刘明. 在厚负性高分辨率电子束抗蚀剂HSQ上制作密集图形的方法. CN: CN101625522A, 2010-01-13.

[601] 贾佳, 谢长青, 刘明. 部分环带光子筛及其制作方法. CN: CN101614961B, 2011-06-22.

[602] 贾锐, 李维龙, 陈 晨, 刘明, 陈宝钦, 谢常青. 基于共蒸法制备硅纳米晶超晶格结构的方法. CN: CN101565855A, 2009-10-28.

[603] 甄丽娟, 商立伟, 刘明, 刘兴华, 涂德钰, 刘舸. 一种制备镂空的聚酰亚胺蒸发掩模漏版的方法. CN: CN101566799A, 2009-10-28.

[604] 贾锐, 李维龙, 陈晨, 刘明, 陈宝钦, 谢长青. 一种制备硅纳米晶超晶格结构的方法. CN: CN101546703A, 2009-09-30.

[605] 刘兴华, 徐德钰, 朱效立, 谢常青, 刘明. 基于X射线曝光技术制作透光纳米压印模板的方法. CN: CN101520600A, 2009-09-02.

[606] 朱效立, 谢常青, 叶甜春, 刘明. 用于X射线曝光的光刻掩模结构及其制备方法. CN: CN101515110A, 2009-08-26.

[607] 贾佳, 姜骥, 谢长青, 刘明. 圆环型光子筛及其制作方法. CN: CN101470270A, 2009-07-01.

[608] 刘琦, 刘明, 龙世兵, 贾锐, 管伟华. 二元过渡族金属氧化物非挥发电阻转变型存储器. CN: CN101471421A, 2009-07-01.

[609] 贾佳, 姜骥, 谢长青, 刘明. 激光远距离传输中央光斑的超分辨压缩振幅光调制器. CN: CN101470269A, 2009-07-01.

[610] 甄丽娟, 刘明, 商立伟, 刘舸. 一种制备有机场效应晶体管的方法. CN: CN100585904C, 2010-01-27.

[611] 商立伟, 刘明, 涂德钰, 甄丽娟, 刘舸, 刘兴华. 一种制备交叉线阵列结构有机分子器件的方法. CN: CN101459223A, 2009-06-17.

[612] 陈 晨, 贾锐, 李维龙, 刘明, 陈宝钦, 龙世兵, 谢常青, 涂德钰, 刘 琦. 一种制备硅纳米晶薄膜的方法. CN: CN101457346A, 2009-06-17.

[613] 李维龙, 贾锐, 陈晨, 刘明, 陈宝钦, 龙世兵, 谢常青, 王琴, 涂德钰. 采用电子束蒸发方式制备HfO 2 纳米晶的方法. CN: CN101459085A, 2009-06-17.

[614] 李维龙, 贾锐, 陈 晨, 刘明, 陈宝钦, 谢常青, 龙世兵. 制备埋嵌硅纳米晶的高介电常数栅介质的方法. CN: CN101452844A, 2009-06-10.

[615] 姜 骥, 谢常青, 岑专专, 商立伟, 刘兴华, 刘明. 一种纳米压印光刻机. CN: CN101452207A, 2009-06-10.

[616] 李维龙, 贾锐, 刘明, 陈宝钦, 龙世兵, 谢常青, 王 琴, 涂德钰, 刘 琦. 采用电子束蒸发方式制备硅纳米晶体的方法. CN: CN101452838A, 2009-06-10.

[617] 龙世兵, 刘明, 贾锐, 陈宝钦, 王琴, 涂德钰, 胡媛, 管伟华, 刘琦, 李维龙, 王永, 杨潇楠, 张森. 一种金属纳米晶浮栅非挥发性存储器及其制作方法. CN: CN101452963A, 2009-06-10.

[618] 管伟华, 龙世兵, 刘明. 一种制作阻变存储器交叉阵列的方法. CN: CN101452891A, 2009-06-10.

[619] 刘兴华, 涂德钰, 朱效立, 谢常青, 刘明. 基于双层胶工艺制作X射线曝光掩膜的方法. CN: CN101452203A, 2009-06-10.

[620] 朱效立, 谢常青, 叶甜春, 刘明. 一种制作聚酰亚胺有机镂空薄膜的方法. CN: CN101445614A, 2009-06-03.

[621] 甄丽娟, 商立伟, 刘兴华, 刘明. 一次掩膜光刻同时定义有机薄膜晶体管源漏栅电极的方法. CN: CN101442104A, 2009-05-27.

[622] 管伟华, 龙世兵, 刘明. 一种制作自隔离电阻转变型存储器的方法. CN: CN101431144A, 2009-05-13.

[623] 涂德钰, 刘明, 谢常青, 刘新华, 商立伟. 用于电子束光刻剥离的去除双层胶的方法. CN: CN101430503A, 2009-05-13.

[624] 涂德钰, 刘明, 王 慰, 商立伟, 谢常青. 三维CMOS与分子开关器件的混合集成电路结构. CN: CN101431070A, 2009-05-13.

[625] 涂德钰, 刘明, 王 慰, 商立伟, 谢常青. 三维CMOS与分子开关器件的混合集成电路结构的制备方法. CN: CN101431032A, 2009-05-13.

[626] 甄丽娟, 商立伟, 刘明. 一种有源层图形化的有机薄膜晶体管的制备方法. CN: CN100573959C, 2009-12-23.

[627] 涂德钰, 刘明, 商立伟, 刘新华, 谢常青. 一种制备交叉分子电子器件的方法. CN: CN101420014A, 2009-04-29.

[628] 管伟华, 刘明, 龙世兵, 贾锐. 嵌入纳米晶颗粒的非挥发电阻转变型存储器. CN: CN101420012A, 2009-04-29.

[629] 李维龙, 贾锐, 刘明, 陈宝钦, 龙世兵, 谢常青, 王 琴, 商利伟, 涂德钰, 刘 琦, 陈 晨. 一种通过金属铬掩蔽膜进行干法刻蚀的方法. CN: CN101419400A, 2009-04-29.

[630] 涂德钰, 刘明, 刘新华, 商立伟, 谢常青. 一种电学双稳态有机薄膜的制备方法. CN: CN101419815A, 2009-04-29.

[631] 李维龙, 贾锐, 刘明, 陈宝钦, 龙世兵, 谢常青, 王 琴, 涂德钰, 刘 琦. 利用电子束蒸发设备制备硅纳米晶体的方法. CN: CN101418467A, 2009-04-29.

[632] 胡媛, 刘明, 龙世兵, 杨清华, 管伟华, 李志刚. 双层隧穿介质结构的纳米晶浮栅非易失存储器及制作方法. CN: CN101399289A, 2009-04-01.

[633] 商立伟, 刘明, 涂德钰, 王丛舜, 贾锐, 龙世兵. 一种双介质层有机场效应晶体管及其制作方法. CN: CN101393966A, 2009-03-25.

[634] 王琴, 管伟华, 刘琦, 胡媛, 李维龙, 龙世兵, 贾锐, 陈宝钦, 刘明. 多层纳米晶浮栅结构的非挥发性存储器及其制备方法. CN: CN101383378A, 2009-03-11.

[635] 王琴, 李维龙, 贾锐, 刘明, 叶甜春. 一种制备单电子晶体管的方法. CN: CN101383285B, 2010-09-22.

[636] 胡媛, 刘明, 龙世兵, 杨清华, 管伟华, 李志刚. 多介质复合隧穿层的纳米晶浮栅存储器及其制作方法. CN: CN101383379A, 2009-03-11.

[637] 王琴, 贾锐, 李维龙, 王从舜, 龙世兵, 陈宝钦, 刘明, 叶甜春. 一种制备射频单电子晶体管位移传感器的方法. CN: CN101381070A, 2009-03-11.

[638] 李金儒, 赵珉, 王琴, 刘明, 陈宝钦. 将CIF格式圆形切割成PG3600格式矩形的方法. CN: CN101334812A, 2008-12-31.

[639] 李金儒, 赵珉, 王琴, 刘明, 陈宝钦. 将CIF格式多边形切割成PG3600格式矩形的方法. CN: CN101334811A, 2008-12-31.

[640] 管伟华, 刘明, 龙世兵, 李志刚, 胡媛. 一种制作金属纳米晶非挥发性存储器的方法. CN: CN101330008A, 2008-12-24.

[641] 胡媛, 刘明, 龙世兵, 杨清华, 管伟华, 李志刚, 刘琦. 一种纳米晶浮栅结构的非挥发性存储单元及其制作方法. CN: CN101312213A, 2008-11-26.

[642] 胡媛, 刘明, 龙世兵, 杨清华, 管伟华, 李志刚, 刘琦. 利用高k介质和纳米晶浮栅的非易失存储器及其制作方法. CN: CN101312212A, 2008-11-26.

[643] 李大勇, 刘明. 一种有机电致发光元件及其制作方法. CN: CN101276882A, 2008-10-01.

[644] 李大勇, 刘明. 用于有机电致发光显示器/照明器件的容错电路. CN: CN101276528A, 2008-10-01.

[645] 李金儒, 赵珉, 王琴, 刘明, 陈宝钦. 一种制作百纳米级螺线管或网状结构的方法. CN: CN101276149A, 2008-10-01.

[646] 王琴, 贾锐, 李维龙, 龙世兵, 陈宝钦, 刘明, 叶甜春. 一种纳米晶浮栅非挥发性存储器及其制作方法. CN: CN101276841A, 2008-10-01.

[647] 王琴, 李维龙, 贾锐, 刘明, 叶甜春. 一种基于SOI量子线的单电子晶体管及其制作方法. CN: CN101276836B, 2010-06-09.

[648] 涂德钰, 刘明, 谢常青, 朱效力, 贾锐. 一种制备交叉结构有机分子器件的方法. CN: CN100594626C, 2010-03-17.

[649] 商立伟, 刘明, 涂德钰, 王丛舜, 贾锐, 龙世兵. 一种有机反熔丝及其制备方法. CN: CN101154711A, 2008-04-02.

[650] 龙世兵, 王琴, 李志刚, 刘明, 陈宝钦. 一种硅基侧栅单电子晶体管及其制作方法. CN: CN101123272A, 2008-02-13.

[651] 龙世兵, 李志刚, 刘明, 陈宝钦. 一种金属纳米晶薄膜的制备方法. CN: CN101122006A, 2008-02-13.

[652] 龙世兵, 王琴, 陈杰智, 刘明. 一种SOI基顶栅单电子晶体管的制备方法. CN: CN100492664C, 2009-05-27.

[653] 龙世兵, 王琴, 李志刚, 刘明, 陈宝钦. 一种硅基侧栅单电子晶体管的制作方法. CN: CN100533768C, 2009-08-26.

[654] 龙世兵, 陈杰智, 刘明, 陈宝钦. 一种SOI基顶栅单电子晶体管及其制备方法. CN: CN101123274A, 2008-02-13.

[655] 王琴, 王丛舜, 龙世兵, 刘明, 叶甜春. 一种射频单电子晶体管位移传感器的设计方法. CN: CN101089545A, 2007-12-19.

[656] 王丛舜, 商立伟, 涂德钰, 刘明. 一种高迁移率各向异性有机场效应管的制备方法. CN: CN101090148A, 2007-12-19.

[657] 龙世兵, 陈杰智, 李志刚, 刘明, 陈宝钦. 一种硅基平面侧栅单电子晶体管及其制作方法. 中国: CN101090134, 2007-12-19.

[658] 龙世兵, 陈杰智, 李志刚, 刘明, 陈宝钦. 一种纳米级库仑岛结构的制备方法. CN: CN101086966A, 2007-12-12.

[659] 商立伟, 王丛舜, 刘明. 一种通过热压来制备各向异性有机场效应管的方法. CN: CN101083304A, 2007-12-05.

[660] 商立伟, 涂德钰, 王丛舜, 刘明. 一种纳米级交叉线阵列结构有机分子器件的制备方法. CN: CN101083301A, 2007-12-05.

[661] 商立伟, 涂德钰, 王丛舜, 刘明. 一种基于模版制备各向异性有机场效应管的方法. CN: CN101083303A, 2007-12-05.

[662] 商立伟, 涂德钰, 王丛舜, 刘明. 一种结合压印技术制备各向异性有机场效应管的方法. CN: CN100544053C, 2009-09-23.

[663] 王丛舜, 牛洁斌, 涂德钰, 谢常青, 陈宝钦, 刘明. 一种声表面波器件的制备方法. CN: CN101022270A, 2007-08-22.

[664] 龙世兵, 刘明, 陈宝钦. 一种用负性电子抗蚀剂制备纳米电极的方法. CN: CN100435285C, 2008-11-19.

[665] 谢常青, 刘明. 用于193nm光学光刻的侧墙铬衰减型移相掩模制作方法. CN: CN101017322A, 2007-08-15.

[666] 涂德钰, 王丛舜, 刘明. 利用多层侧墙技术制备纳米压印模版的方法. CN: CN1982202A, 2007-06-20.

[667] 龙世兵, 刘明, 陈宝钦. 采用正性电子抗蚀剂制备金属纳米电极的方法. CN: CN1979768A, 2007-06-13.

[668] 涂德钰, 王丛舜, 刘明. 一种紫外固化纳米压印模版的制备方法. CN: CN100437361C, 2008-11-26.

[669] 王丛舜, 牛洁斌, 涂德钰, 谢常青, 陈宝钦, 刘明. 纳米压印和光学光刻匹配混合的声表面波器件制备方法. CN: CN1979340A, 2007-06-13.

[670] 王丛舜, 胡文平, 涂德钰, 姬濯宇, 刘明. 基于自组装技术的交叉阵列结构有机器件制备方法. CN: CN1949475A, 2007-04-18.

[671] 涂德钰, 王丛舜, 刘明. 基于氮化硅镂空掩模的纳米电极制备方法. CN: CN1901141A, 2007-01-24.

[672] 王丛舜, 涂德钰, 刘明. 采用氧化硅填充－回刻的交叉阵列结构有机器件制备方法. CN: CN1897322A, 2007-01-17.

[673] 涂德钰, 王从舜, 刘明. 一种交叉线阵列结构有机分子器件的制备方法. CN: CN1885521A, 2006-12-27.

[674] 刘明, 陈宝钦, 谢常青. 全透明无铬移相掩模实现100纳米图形加工的方法. CN: CN1847984A, 2006-10-18.

[675] 刘明, 徐秋霞, 陈宝钦, 龙世兵, 牛洁斌. 电子束和光学混合和匹配曝光套准标记的制备方法. CN: CN1847983A, 2006-10-18.

[676] 欧毅, 陈大鹏, 刘明, 刘辉. 硅基液晶铝反射电极的钝化保护方法. CN: CN1841149A, 2006-10-04.

[677] 刘明, 王云翔, 陈宝钦, 徐秋霞. 一种用负性化学放大抗蚀剂曝光亚50nm图形的方法. CN: CN1818788A, 2006-08-16.

[678] 刘明, 叶甜春, 谢常青, 张建宏. 用电子束大小电流混合一次曝光制备X射线掩模的方法. CN: CN1818789A, 2006-08-16.

[679] 龙世兵, 李志刚, 谢常青, 刘明, 陈宝钦. 避免ZEP520电子抗蚀剂产生裂纹的方法. CN: CN1815369A, 2006-08-09.

[680] 谢常青, 范东升, 刘明. 纳米压印与光学光刻混合制作T型栅的方法. CN: CN1797200A, 2006-07-05.

[681] 谢常青, 范东升, 刘明. 单次纳米压印制作深纳米T型栅的方法. CN: CN1782879A, 2006-06-07.

[682] 徐秋霞, 钱鹤, 刘明, 赵玉印. 一种纳米线宽多晶硅栅刻蚀掩膜图形的形成方法. CN: CN1700421A, 2005-11-23.

   

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[688] 李泠, 施毅, 刘明, 右火左斗, 陈杰智. 基于元胞自动机理论的硅各向异性腐蚀模型. 半导体学报[J]. 2005, 第 3 作者26(8): 1671-1675, http://lib.cqvip.com/Qikan/Article/Detail?id=20135734.
[689] 龙世兵, 李志刚, 陈宝钦, 赵新为, 刘明. ZEP520正性电子抗蚀剂的工艺研究. 微细加工技术[J]. 2005, 第 5 作者6-11, http://lib.cqvip.com/Qikan/Article/Detail?id=15421924.
[690] 张立辉, 李志刚, 康晓辉, 谢常青, 刘明. 金属结单电子晶体管的模型建立及实验验证. 半导体学报[J]. 2005, 第 5 作者26(7): 1323-1327, http://lib.cqvip.com/Qikan/Article/Detail?id=18008229.
[691] Zhang Lihui, Li Zhigang, Kang Xiaohui, Xie Changqing, Liu Ming. 金属结单电子晶体管的模型建立及实验验证. 半导体学报[J]. 2005, 第 5 作者26(7): 1323-1327, http://lib.cqvip.com/Qikan/Article/Detail?id=18008229.
[692] 陆晶, 陈宝钦, 刘明, 龙世兵, 李泠. 100nm分辨率交替式移相掩模设计. 固体电子学研究与进展[J]. 2005, 第 3 作者25(2): 260-264, http://lib.cqvip.com/Qikan/Article/Detail?id=15822090.
[693] Zhang Haiying, Liu Xunchun, Yin Junjian, Chen Liqiang, Wang Runmei, Niu Jiebin, Liu Ming. 锯齿型源漏结构的新型InP基HEMT器件. 半导体学报[J]. 2005, 第 7 作者26(6): 1126-1128, http://lib.cqvip.com/Qikan/Article/Detail?id=15823414.
[694] 王巍, 叶甜春, 陈大鹏, 刘明, 李兵. 高密度等离子体刻蚀机中的终点检测技术. 微电子学[J]. 2005, 第 4 作者35(3): 236-239,244, http://lib.cqvip.com/Qikan/Article/Detail?id=15995628.
[695] LI Dongmei, PAN Feng, NIU Jiebin, LIU Ming. Enhancement of the orientation and adhesion of Al films on LiNbO3 with Ni underlayer. 稀有金属：英文版[J]. 2005, 第 4 作者24(4): 363-369, http://lib.cqvip.com/Qikan/Article/Detail?id=20866428.
[696] 刘明, 谢常青, 王丛舜, 龙世兵, 李志钢, 易里成荣, 涂德钰. 纳米加工和纳米电子器件. 微纳电子技术[J]. 2005, 第 1 作者42(9): 393-397, http://lib.cqvip.com/Qikan/Article/Detail?id=20115763.
[697] Kang Xiaohui, Li Zhigang, Liu Ming, Xie Changqing, Chen Baoqin. 一种提取电子束光刻中电子散射参数的新方法. 半导体学报[J]. 2005, 第 3 作者26(3): 455-459, http://lib.cqvip.com/Qikan/Article/Detail?id=15496322.
[698] 康晓辉, 李志刚, 刘明, 谢常青, 陈宝钦. 一种提取电子束光刻中电子散射参数的新方法. 半导体学报[J]. 2005, 第 3 作者26(3): 455-459, http://lib.cqvip.com/Qikan/Article/Detail?id=15496322.
[699] 李冬梅, 王旭波, 潘峰, 牛洁斌, 刘明. Zr过渡层对Al膜微结构与性能的影响. 压电与声光[J]. 2005, 第 5 作者27(2): 152-155, http://lib.cqvip.com/Qikan/Article/Detail?id=15391864.
[700] 李泠, 龙世兵, 刘明, 陈宝钦. 一种基于元胞自动机的显影模型. 微电子学与计算机[J]. 2005, 第 3 作者22(3): 277-280, http://lib.cqvip.com/Qikan/Article/Detail?id=15526892.
[701] 王巍, 叶甜春, 李兵, 陈大鹏, 刘明. 高密度等离子刻蚀机中的等离子体诊断技术. 半导体技术[J]. 2005, 第 5 作者30(3): 13-17, http://lib.cqvip.com/Qikan/Article/Detail?id=11936981.
[702] 张海英, 刘训春, 尹军舰, 陈立强, 王润梅, 牛洁斌, 刘明. 锯齿型源漏结构的新型InP基HEMT器件. 半导体学报[J]. 2005, 第 7 作者26(6): 1126-1128, http://lib.cqvip.com/Qikan/Article/Detail?id=15823414.
[703] 易里成荣, 谢常青, 王从舜, 刘明, 叶甜春. 室温下高峰谷电流比、高峰电流密度的双势垒共振隧穿二极管. 半导体学报[J]. 2005, 第 4 作者26(10): 1871-1874, http://lib.cqvip.com/Qikan/Article/Detail?id=20281944.
[704] 康晓辉, 张立辉, 范东升, 王德强, 谢常青, 刘明. 193nm光刻散射条技术研究. 微电子学[J]. 2005, 第 6 作者35(4): 360-363, http://lib.cqvip.com/Qikan/Article/Detail?id=18085325.
[705] 杨清华, 刘明, 陈大鹏, 叶甜春. 高斯电子束曝光系统. 电子工业专用设备[J]. 2005, 第 2 作者34(2): 42-45, http://lib.cqvip.com/Qikan/Article/Detail?id=15055712.
[706] 薛丽君, 刘明, 王燕, 夏浑, 陈宝钦. AIGaN／GaN异质结极化行为与二维电子气. 半导体技术[J]. 2004, 第 2 作者29(7): 63-65, http://lib.cqvip.com/Qikan/Article/Detail?id=10229489.
[707] 刘明, 陈宝钦, 李兵, 董立军, 杨清华, 陈大鹏, 叶甜春. 电子束散射角限制投影光刻掩模研制. 光电工程[J]. 2004, 第 1 作者31(4): 13-16, http://lib.cqvip.com/Qikan/Article/Detail?id=9623094.
[708] 李俊峰, 杨荣, 赵玉印, 柴淑敏, 刘明, 徐秋霞, 钱鹤. 部分耗尽0．25μm SOI射频nMOSFET. 半导体学报[J]. 2004, 第 5 作者25(9): 1061-1065, http://lib.cqvip.com/Qikan/Article/Detail?id=10541888.
[709] 徐秋霞, 钱鹤, 韩郑生, 刘明, 侯瑞兵, 陈宝钦, 蒋浩杰, 赵玉印, 吴德馨. 高性能42nm栅长CMOS器件. 半导体学报[J]. 2003, 第 4 作者24(B05): 153-160, http://lib.cqvip.com/Qikan/Article/Detail?id=9068840.
[710] 彭英才, 赵新为, 刘明. 纳米量子器件研究的若干前沿问题. 自然杂志[J]. 2003, 第 3 作者25(3): 145-149, http://lib.cqvip.com/Qikan/Article/Detail?id=8005080.
[711] 刘明, 陈宝钦. 下一代光刻技术研究开发情况. 中国集成电路[J]. 2003, 第 1 作者http://lib.cqvip.com/Qikan/Article/Detail?id=1000157936.
[712] 刘明. 纳米级电子束直写曝光的基础工艺. 半导体学报[J]. 2003, 第 1 作者[[[024]]](B05): [[[226]]]-[[[228]]], http://lib.cqvip.com/Qikan/Article/Detail?id=9068856.0.
[713] 石华芬, 张海英, 刘训春, 陈宝钦, 刘明, 王云翔. 一种新的高成品率InP基T型纳米栅制作方法. 半导体学报[J]. 2003, 第 5 作者24(4): 411-415, http://lib.cqvip.com/Qikan/Article/Detail?id=7594873.
[714] 殷华湘, 王云翔, 刘明, 徐秋霞. 电子束曝光UV3正性抗蚀剂的工艺研究. 微电子学[J]. 2003, 第 3 作者33(6): 485-489, http://lib.cqvip.com/Qikan/Article/Detail?id=8819362.
[715] 刘明, 陈宝钦. 纳米电子束曝光. 半导体学报[J]. 2003, 第 1 作者24(1): 24-28, http://lib.cqvip.com/Qikan/Article/Detail?id=7321320.
[716] 陆晶, 陈宝钦, 刘明, 王云翔, 龙世兵, 李泠. 100nm分辨率的移相掩模技术. 微细加工技术[J]. 2003, 第 3 作者27-32, http://lib.cqvip.com/Qikan/Article/Detail?id=9052814.
[717] 陈宝钦, 任黎明, 刘明, 王云翔, 龙世兵, 陆晶, 李泠. 电子束直写邻近效应校正技术. 半导体学报[J]. 2003, 第 3 作者24(B05): 221-225, http://lib.cqvip.com/Qikan/Article/Detail?id=9068855.
[718] 吴德馨, 钱鹤, 叶甜春, 刘明. 现代微电子技术. 2002, 第 4 作者http://159.226.55.106/handle/172511/18294.
[719] 刘明, 陈宝钦, 刘小伟, 尉林鹏, 吴德馨. 电子束和接触式曝光机的混合曝光技术. 微细加工技术[J]. 2002, 第 1 作者13-17, http://lib.cqvip.com/Qikan/Article/Detail?id=6177862.
[720] 王云翔, 刘明, 陈宝钦, 张建宏, 张卫红. PREVAIL—下一代电子束投影曝光技术. 微细加工技术[J]. 2002, 第 2 作者1-4, http://lib.cqvip.com/Qikan/Article/Detail?id=6495334.
[721] 张建宏, 刘明. 电子束曝光技术的应用. 世界产品与技术[J]. 2002, 第 2 作者30-31, http://lib.cqvip.com/Qikan/Article/Detail?id=6255236.
[722] 张建宏, 刘明. 电子束曝光技术发展概况. 世界产品与技术[J]. 2002, 第 2 作者27-29, http://lib.cqvip.com/Qikan/Article/Detail?id=6255235.
[723] 刘明. 电子束曝光技术发展动态. 微电子学[J]. 2000, 第 1 作者30(2): 117, http://lib.cqvip.com/Qikan/Article/Detail?id=4212775.0.
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（1） 集成电路制造技术, IC manufacturing technology, 化学工业出版社, 2006-03, 第 2 作者
（2） 半导体科学与技术 第九章, Semiconductor Science and Technology;Chapter 9, 科学出版社, 2007-09, 第 1 作者
（3） 纳米结构表面, Nanostructured Surface, Wiley-VCH, 2010-07, 第 1 作者
（4） 纳米半导体器件与技术, nano-semiconductors: devices and technology, 国防工业出版社, 2013-12, 第 1 作者
（5） 新型阻变存储技术, resistive random access memory, 科学出版社, 2014-10, 第 1 作者
（6） 《半导体科学与技术》，第20章《新型非挥发性存储器》, 科学出版社, 2017-06, 第 1 作者
（7） 《半导体科学与技术》，第30章《微纳光刻与微纳米加工技术》, 科学出版社, 2017-06, 第 1 作者

   

（ 1 ） 32nm新型存储器关键工艺解决方案, 主持, 国家级, 2009-01--2011-12
（ 2 ） 纳米加工与新型半导体器件研究, 主持, 国家级, 2009-01--2012-12
（ 3 ） 纳米结构电荷俘获材料及高密度多值存储基础研究, 主持, 国家级, 2010-01--2014-08
（ 4 ） 分子电子学的基础研究, 主持, 国家级, 2006-01--2011-12
（ 5 ） 纳米晶浮栅存储器存储材料及关键技术, 主持, 国家级, 2008-01--2010-12
（ 6 ） 新型微电子器件集成的基础研究, 主持, 国家级, 2013-01--2015-12
（ 7 ） 超高密度存储器三维集成关键技术研究, 主持, 国家级, 2014-01--2018-12
（ 8 ） 新型微电子器件集成的基础研究, 主持, 国家级, 2016-01--2018-12
（ 9 ） 有机射频电子标签的设计与制备, 主持, 部委级, 2014-07--2019-06
（ 10 ） 三维阻变存储器基础研究, 主持, 部委级, 2016-08--2021-07
（ 11 ） 阻变存储器材料与器件研究, 主持, 省级, 2017-01--2018-12
（ 12 ） 科技北京百名领军人才, 主持, 省级, 2015-01--2017-12
（ 13 ） 基于高品质异质结构的信息电子光电器件, 主持, 部委级, 2017-07--2018-06

（1） Advanced Semiconductors - Opportunities for Mainland and Hong Kong Collaboration   刘明   2017-11-14
（2）Resistive Random Access Memory and 3D Integration   2017-09-22
（3）High Performance Selector and 3D Integration   刘明   2017-08-20
（4）Reliability issues on oxide-electrolyte-based RRAM   刘明   2017-04-03
（5）High performance selector and 3D integration(Invited)   2016-10-10
（6）3D Vertical Integration of Resistive Switching Memory(Invited)   2016-06-07
（7）Characteristics and Mechanism of Multimode Resistive Switching Behaviors in the Oxide-electrolyte-based RRAM(Invited)   2016-04-06
（8）Improvement of RRAM performances by inserting graphene layer   2016-03-29
（9）Reliability Issues of Oxide Electrolyte Based CBRAM   刘明   2015-10-12
（10）Impact of filament evolution on reliability issues of oxide electrolyte based conductive bridge random access memory   刘明   2015-10-11
（11）Characteristics and mechanism of multimode resistive switching behaviors in the oxide-electrolyte-based RRAM   刘明   2015-09-03
（12）Reliability Issues of Oxide-Electrolyte-Based Conductive Bridge Random Access Memory   刘明   2015-06-28
（13）A Probe of Reliability Issues of Oxide Electrolyte Based CBRAM   刘明   2015-06-01
（14）Future of Memory: Application-driven or Technology-driven, which will dominate in the new era of computing?   刘明   2015-05-17
（15）Resistive Switching Characteristics and Mechanism of Oxide-Electrolyte-Based RRAM   刘明   2015-05-04

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许晓欣  博士研究生  080903-微电子学与固体电子学  

张美芸  博士研究生  080903-微电子学与固体电子学  

张科科  硕士研究生  080903-微电子学与固体电子学  

现指导学生

刘璟  博士研究生  080903-微电子学与固体电子学  

龚天成  博士研究生  080903-微电子学与固体电子学  

吴全潭  博士研究生  080903-微电子学与固体电子学  

王睿  博士研究生  080903-微电子学与固体电子学  

曹荣荣  博士研究生  080903-微电子学与固体电子学  

张续猛  博士研究生  080903-微电子学与固体电子学  

董航  博士研究生  080903-微电子学与固体电子学  

段新绿  博士研究生  080903-微电子学与固体电子学  

张颖  博士研究生  080903-微电子学与固体电子学  

袁鹏  博士研究生  080903-微电子学与固体电子学  

贾淑静  博士研究生  080903-微电子学与固体电子学  

项飞斌  硕士研究生  080903-微电子学与固体电子学