基本信息
罗军  男  博导  中国科学院微电子研究所
电子邮件: luojun@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号中科院微电子所 集成电路先导工艺研发中心
邮政编码: 100029

研究领域

集成电路先导工艺技术
CMOS器件与工艺;半导体器件与工艺

招生信息

材料、化学以及电子工程相关专业学生

招生专业
080903-微电子学与固体电子学
080901-物理电子学
招生方向
集成电路先导工艺技术
CMOS器件与工艺;半导体器件与工艺

教育背景

2006-09--2010-06   瑞典皇家工学院(KTH)   工学博士
2005-09--2006-09   复旦大学   博士在读
2002-09--2005-07   厦门大学   工学硕士
1999-09--2002-07   华中科技大学   管理学学士
1998-09--2002-07   中国地质大学(武汉)   工学学士
学历
研究生

学位

工学博士

工作经历

   
工作简历
2017-05~现在, 中国科学院微电子研究所, 研究员
2010-08~2017-04,中科院微电子所, 助理研究员/副研究员
社会兼职
2019-07-01-今,Wiley series on Materials for Electronics and Photonics, 编辑
2016-06-29-2019-04-28,Journal of Materials Science: Materials in Electronics, 副主编

教授课程

集成电路制造工艺与研究方法
先进集成电路制造品质控制:理论与实务
半导体工艺与制造技术
半导体工艺与制造技术二班
先进半导体器件物理与工艺技术
半导体制造技术

专利与奖励

   
奖励信息
(1) 魏桥国科校长奖教金, 特等奖, 院级, 2022
(2) 中国电子信息科技创新团队, 一等奖, 部委级, 2019
(3) 中国科学院“朱李月华优秀教师奖”, 院级, 2017
(4) 中国专利优秀奖, 部委级, 2017
专利成果
[1] 高建峰, 李俊杰, 周娜, 刘卫兵, 杨涛, 李俊峰, 罗军. 一种半导体器件及其制备方法. CN: CN116722029A, 2023-09-08.
[2] 朱慧珑, 陈卓, 刘金彪, 李俊峰, 罗军. 半导体器件制造方法. CN: CN116721921A, 2023-09-08.
[3] 罗军, 毛淑娟, 许静. 半导体器件与其制作方法. CN: CN116705837A, 2023-09-05.
[4] 杨美音, 罗军, 李彦如. MRAM存储单元及其写入方法、读取方法和制备方法. CN: CN116669526A, 2023-08-29.
[5] 许静, 罗军, 苏雪寅, 骆堃. 一种半导体器件及其制作方法、电子设备. CN: CN116646378A, 2023-08-25.
[6] 许静, 苏雪寅, 罗军. 一种亚阈值区漏级电流的确定方法、装置及存储介质. CN: CN116609701A, 2023-08-18.
[7] 张丹, 罗军, 许静, 叶甜春. 金属互连结构、半导体器件及提高扩散阻挡层性能的方法. CN: CN112652607B, 2023-08-18.
[8] 李永亮, 刘昊炎, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN116598296A, 2023-08-15.
[9] 朱慧珑, 陈卓, 刘金彪, 李俊峰, 罗军. FinFET及其制造方法及包括FinFET的电子设备. CN: CN116598360A, 2023-08-15.
[10] 杨美音, 罗军, 崔岩, 许静. 一种磁性隧道结及其制造方法、存储单元. CN: CN112563411B, 2023-08-08.
[11] 崔岩, 罗军, 杨美音, 许静. 磁隧道结的形成方法及磁阻式随机存储器. CN: CN110061127B, 2023-08-08.
[12] 罗军, 陈博涵, 许静. 一种铁电栅极叠层和铁电场效应晶体管及其制备方法. CN: CN116544270A, 2023-08-04.
[13] 罗军, 李海荣, 刘晨星, 丰蜜, 李帅, 唐健博, 李俊峰. 一种SiC MOSFET器件. CN: CN116487440A, 2023-07-25.
[14] 李永亮, 刘昊炎, 罗军, 王文武. 一种环栅晶体管及其制造方法. CN: CN116487439A, 2023-07-25.
[15] 李永亮, 刘昊炎, 罗军, 王文武. 一种环栅晶体管及其制造方法. CN: CN116469938A, 2023-07-21.
[16] 杨美音, 舒敬坤, 罗军, 李彦如. SOT-MRAM存储单元及其制备方法. CN: CN116456807A, 2023-07-18.
[17] 李永亮, 刘昊炎, 贾晓锋, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN116454136A, 2023-07-18.
[18] 周娜, 杨华彬, 毛海央, 李俊峰, 罗军. 一种温湿度监测器. CN: CN116429173A, 2023-07-14.
[19] 周娜, 李俊杰, 高建峰, 刘耀东, 李永亮, 罗军, 赵超, 杨涛, 李俊峰, 王文武. 一种金属纳米结构及其制作方法、电子器件、电子设备. CN: CN111415902B, 2023-07-14.
[20] 朱慧珑, 叶甜春, 罗军. 存储器件及其制造方法及包括存储器件的电子设备. CN: CN116419568A, 2023-07-11.
[21] 贺晓彬, 刘金彪, 李俊峰, 李亭亭, 李俊杰, 罗军. 涂胶方法和电子设备. CN: CN115945367A, 2023-04-11.
[22] 李相遇, 熊文娟, 蒋浩杰, 李亭亭, 罗军. 一种多晶硅的沉积方法及其应用. CN: CN111430226B, 2023-04-07.
[23] 崔岩, 罗军, 杨美音, 许静. 一种基于铁电/铁磁材料耦合的双模式电压调控MRAM存储单元及其调控方法、制备方法. CN: CN115884602A, 2023-03-31.
[24] 高建峰, 刘卫兵, 李俊杰, 周娜, 杨涛, 李俊峰, 罗军. 半导体器件金属互连结构及其形成方法. CN: CN115881627A, 2023-03-31.
[25] 李俊杰, 刘恩序, 周娜, 高建峰, 李俊峰, 李永亮, 罗军, 王文武. 集成电路设备和半导体器件的制备方法. CN: CN115881590A, 2023-03-31.
[26] 贺晓彬, 李亭亭, 杨涛, 唐波, 刘金彪, 李俊峰, 罗军. 电子束光刻方法、浅沟槽隔离及电极接触孔的形成方法. CN: CN115639730A, 2023-01-24.
[27] 李永亮, 赵飞, 殷华湘, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN115621320A, 2023-01-17.
[28] 毛淑娟, 罗军, 许静. Ge基NMOS晶体管及其制作方法. CN: CN111463133B, 2023-01-17.
[29] 高建峰, 李俊杰, 周娜, 贺晓彬, 杨涛, 李俊峰, 罗军. 一种互连结构的制作方法、互连结构及半导体器件. CN: CN115588648A, 2023-01-10.
[30] 贺晓彬, 杨涛, 李亭亭, 刘金彪, 李俊峰, 罗军. 新的叠层结构及其制备方法、图形转移方法、返工方法. CN: CN115547815A, 2022-12-30.
[31] 刘昊炎, 李永亮, 王晓磊, 罗军, 王文武. 一种半导体器件的制造方法. CN: CN115513142A, 2022-12-23.
[32] 贺晓彬, 杨涛, 李亭亭, 刘金彪, 唐波, 李俊峰, 罗军. 具有量测对准图形的晶圆. CN: CN115360173A, 2022-11-18.
[33] 许高博, 殷华湘, 罗军, 颜刚平, 田国良. 一种无电容动态随机存储器及其制备方法. CN: CN115360233A, 2022-11-18.
[34] 许高博, 殷华湘, 罗军, 颜刚平, 田国良. 一种动态随机存储器及其制备方法. CN: CN115332252A, 2022-11-11.
[35] 罗军, 毛淑娟, 许静. 肖特基势垒晶体管及其制备方法. CN: CN115188813A, 2022-10-14.
[36] 李永亮, 赵飞, 程晓红, 张青竹, 殷华湘, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN115172447A, 2022-10-11.
[37] 李纯, 刘昊炎, 李永亮, 殷华湘, 罗军, 王文武. 一种半导体器件的制造方法. CN: CN115116956A, 2022-09-27.
[38] 刘昊炎, 李永亮, 殷华湘, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN115117147A, 2022-09-27.
[39] 孙永载, 杨红, 杨涛, 李俊杰, 王文武, 罗军. 一种测试元件组及其测试方法. CN: CN115083501A, 2022-09-20.
[40] 李永亮, 刘昊炎, 程晓红, 罗军, 王文武. 一种鳍式场效应晶体管及其制造方法. CN: CN115050818A, 2022-09-13.
[41] 李永亮, 赵飞, 罗军, 王文武. 一种环栅晶体管的制造方法. CN: CN115020233A, 2022-09-06.
[42] 李永亮, 张佳熠, 贾晓峰, 赵飞, 殷华湘, 罗军, 王文武. 一种半导体器件的制造方法. CN: CN114975282A, 2022-08-30.
[43] 李永亮, 陈安澜, 赵飞, 程晓红, 殷华湘, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN114944392A, 2022-08-26.
[44] 李永亮, 赵飞, 罗军, 王文武. 一种环栅晶体管及其制造方法. CN: CN114899236A, 2022-08-12.
[45] 李永亮, 张佳熠, 殷华湘, 罗军, 王文武. 一种半导体器件的制造方法. CN: CN114883270A, 2022-08-09.
[46] 杨尚博, 许高博, 殷华湘, 罗军. 一种无电容DRAM单元结构及制造方法. CN: CN114864583A, 2022-08-05.
[47] 李永亮, 赵飞, 陈安澜, 张佳熠, 殷华湘, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN114823668A, 2022-07-29.
[48] 李永亮, 毛晓烔, 程晓红, 马雪丽, 罗军, 王文武. 一种晶体管的制造方法. CN: CN114709135A, 2022-07-05.
[49] 李永亮, 贾晓锋, 殷华湘, 罗军, 王文武. 一种半导体器件的制造方法. CN: CN114709175A, 2022-07-05.
[50] 李永亮, 赵飞, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN114709222A, 2022-07-05.
[51] 李永亮, 陈安澜, 程晓红, 罗军, 王文武. 一种半导体器件的制造方法. CN: CN114678329A, 2022-06-28.
[52] 李龙范, 刘金彪, 杨涛, 李俊峰, 王文武, 罗军. 栅极及MOSFET的制造方法. CN: CN114678269A, 2022-06-28.
[53] 安重镒, 李相遇, 李东根, 刘金彪, 杨涛, 李俊峰, 王文武, 罗军. 栅叠层结构、栅极、DRAM及其制造方法. CN: CN114678268A, 2022-06-28.
[54] 李永亮, 刘昊炎, 殷华湘, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN114613769A, 2022-06-10.
[55] 李永亮, 张佳熠, 殷华湘, 罗军, 王文武. 一种半导体器件及其制造方法. CN: CN114613770A, 2022-06-10.
[56] 李永亮, 程晓红, 赵飞, 罗军, 王文武. 具有高驱动能力和陡峭SS特性的半导体器件及制造方法. CN: CN114566549A, 2022-05-31.
[57] 李恋恋, 都安彦, 田国良, 杨红, 罗军, 王文武. 半导体集成电路器件及其制作方法、电子设备. CN: CN114497028A, 2022-05-13.
[58] 李恋恋, 都安彦, 田国良, 杨红, 罗军, 王文武. 半导体集成电路器件及其制作方法、电子设备. CN: CN114497028A, 2022-05-13.
[59] 李恋恋, 都安彦, 田国良, 杨红, 罗军, 王文武. 半导体集成电路器件及其制作方法、电子设备. CN: CN114497028A, 2022-05-13.
[60] 陈睿, 都安彦, 韦亚一, 邵花, 杨红, 罗军, 王文武. 一种利用浅槽沟道隔离制造电源线的方法. CN: CN114464574A, 2022-05-10.
[61] 陈睿, 都安彦, 韦亚一, 邵花, 杨红, 罗军, 王文武. 一种利用浅槽沟道隔离制造电源线的方法. CN: CN114464574A, 2022-05-10.
[62] 宋智雨, 许高博, 颜刚平, 殷华湘, 罗军. 一种基于薄膜晶体管的无电容DRAM单元结构及制造方法. CN: CN114334980A, 2022-04-12.
[63] 崔岩, 罗军, 杨美音, 许静. 存算一体单元及逻辑功能可重构的存算一体电路. CN: CN114244348A, 2022-03-25.
[64] 毛淑娟, 罗军, 许静. 半导体器件与其制作方法. CN: CN109346409B, 2022-03-22.
[65] 崔岩, 罗军, 杨美音, 许静. 自旋霍尔器件、霍尔电压的获取方法及最大池化的方法. CN: CN114184833A, 2022-03-15.
[66] 贺晓彬, 杨涛, 李亭亭, 刘金彪, 唐波, 李俊峰, 罗军. 刻蚀梯形凹槽的方法及在衬底上形成金属线条的方法. CN: CN114171374A, 2022-03-11.
[67] 贺晓彬, 杨涛, 刘金彪, 李亭亭, 唐波, 李俊峰, 罗军. 在半导体衬底上制作交叉线的方法. CN: CN114171668A, 2022-03-11.
[68] 李俊杰, 罗军, 王文武, 杨涛, 李永亮, 周娜, 高建峰, 殷华湘, 张静, 洪欣. 一种半导体器件及其制备方法、电子设备. CN: CN114038911A, 2022-02-11.
[69] 高建峰, 刘卫兵, 李俊杰, 周娜, 项金娟, 杨涛, 李俊峰, 罗军. 一种半导体结构及其制备方法、三维存储器. CN: CN114023745A, 2022-02-08.
[70] 张青竹, 殷华湘. 一种半导体器件的制备方法及半导体器件. CN: CN114005835A, 2022-02-01.
[71] 刘金彪, 罗军, 杨涛, 李俊峰, 王桂磊. 绝缘体上单晶薄膜制备方法及层叠结构. CN: CN113964020A, 2022-01-21.
[72] 罗军, 赵超. 半导体器件及其制造方法. CN: CN113948467A, 2022-01-18.
[73] 杨美音, 高建峰, 罗军, 崔岩, 许静. 一种刻蚀方法. CN: CN113838798A, 2021-12-24.
[74] 毛淑娟, 殷华湘, 刘战峰, 王桂磊, 罗军. 一种基带RF一体化集成结构及集成方法. CN: CN113809070A, 2021-12-17.
[75] 李俊杰, 刘耀东, 罗军, 周娜, 王桂磊, 高建峰, 杨涛, 殷华湘, 赵超, 朱慧珑, 王文武. 一种二极管、探测器及探测器的制作方法. CN: CN111244193B, 2021-12-07.
[76] 杨美音, 李文静, 叶力, 向清懿, 罗军, 高建峰. 存储器电路及其数据写入和读取方法、存储器、电子设备. CN: CN113744776A, 2021-12-03.
[77] 杨美音, 崔岩, 罗军, 许静. 一种存储器件及其制造方法. CN: CN111459864B, 2021-11-30.
[78] 杨美音, 罗军",null,"许静. 一种自旋轨道转矩磁阻式随机存储器及其制造方法. CN: CN113707803A, 2021-11-26.
[79] 杨美音, 罗军. SOT-MRAM存储单元及其制备方法. CN: CN113690366A, 2021-11-23.
[80] 李永亮, 程晓红",null,null,"王文武. 一种半导体器件的制造方法. CN: CN113506774A, 2021-10-15.
[81] 刘金彪, 罗军, 李俊峰, 杨涛, 贺晓彬. 一种激光退火设备和激光退火方法. CN: CN113471102A, 2021-10-01.
[82] 杨美音, 崔岩, 罗军, 许静. 一种存储器件. CN: CN110061002B, 2021-09-21.
[83] 刘金彪, 罗军, 李俊峰, 贺晓彬. 一种合束装置、激光加工设备和激光退火方法. CN: CN113422296A, 2021-09-21.
[84] 刘金彪, 罗军, 李俊峰. 一种激光退火设备及激光退火方法. CN: CN113421836A, 2021-09-21.
[85] 高建峰, 贺晓彬, 李俊杰, 王佳, 刘卫兵, 杨涛, 李俊峰, 罗军. 约瑟夫森结的制备方法及约瑟夫森结. CN: CN113380942A, 2021-09-10.
[86] 孙祥烈, 许静, 罗军, 赵超. 键合半导体器件及其制备方法. CN: CN113380648A, 2021-09-10.
[87] 孙祥烈, 许静, 罗军, 赵超. 一种铜互连结构及其制备方法. CN: CN113380763A, 2021-09-10.
[88] 孙祥烈, 许静, 罗军, 赵超. 芯片单元、芯片组件和芯片单元的制作方法. CN: CN113380743A, 2021-09-10.
[89] 孙祥烈, 许静, 罗军, 赵超. 空气隙制作方法、空气隙和电子设备. CN: CN113380698A, 2021-09-10.
[90] 孙祥烈, 许静, 罗军. 半导体器件及其制备方法. CN: CN113380761A, 2021-09-10.
[91] 孙祥烈, 许静, 罗军, 赵超. 一种键合结构、多晶圆三维集成结构及其制备方法. CN: CN113380742A, 2021-09-10.
[92] 孙祥烈, 许静, 罗军, 赵超. 半导体器件及其制备方法. CN: CN113380699A, 2021-09-10.
[93] 毛淑娟, 刘战峰, 殷华湘, 刘金彪, 王桂磊, 李永亮, 罗军. 一种半导体器件及其制造方法. CN: CN113363214A, 2021-09-07.
[94] 毛淑娟, 刘战峰, 殷华湘, 刘金彪, 王桂磊",null,"罗军. 一种半导体器件及其制造方法. CN: CN113363214A, 2021-09-07.
[95] 毛淑娟, 殷华湘, 刘战峰, 罗军, 刘金彪, 张青竹, 张亚东. 一种半导体器件及其制造方法. CN: CN113345840A, 2021-09-03.
[96] 毛淑娟, 殷华湘",null,null,"张青竹, 罗军. 一种半导体器件及其制造方法. CN: CN113345841A, 2021-09-03.
[97] 杨美音, 罗军, 崔岩, 许静. 存储单元及其数据写入和读取方法、存储器、电子设备. CN: CN113328034A, 2021-08-31.
[98] 李永亮, 程晓红, 赵飞, 马雪丽, 杨红, 王晓磊, 罗军, 王文武. 一种半导体器件的制造方法. CN: CN113314423A, 2021-08-27.
[99] 张利斌, 韦亚一, 殷华湘",null,null,null,"罗军, 王文武. 一种半导体器件的制造方法. CN: CN113314423A, 2021-08-27.
[100] 杨美音, 罗军, 崔岩, 许静. 基于底电极垂直向电压控制的SOT-MRAM及制造、写入方法. CN: CN113224232A, 2021-08-06.
[101] 杨美音, 罗军, 崔岩, 许静. 基于底电极平行向电压控制的SOT-MRAM及制造方法. CN: CN113178518A, 2021-07-27.
[102] 罗军, 许静, 袁述, 张丹. 碳化硅欧姆接触结构的形成方法及MOS晶体管的制备方法. CN: CN113178414A, 2021-07-27.
[103] 张青竹, 殷华湘, 曹磊, 张兆浩, 田佳佳, 顾杰, 李俊杰, 姚佳欣, 李永亮, 张永奎, 吴振华, 赵鸿滨, 罗军, 王文武, 屠海令, 叶甜春. 一种Z 2 -FET器件及其制备方法、一种半导体器件. CN: CN113178489A, 2021-07-27.
[104] 刘金彪, 罗军, 李俊峰. 一种掺杂缺陷去除方法. CN: CN113130309A, 2021-07-16.
[105] 罗军, 袁述. 一种半导体器件的制造方法. CN: CN113130298A, 2021-07-16.
[106] 罗军, 袁述. 一种半导体器件的制造方法. CN: CN113130298A, 2021-07-16.
[107] 刘金彪, 罗军, 李俊峰. 一种研磨装置及方法. CN: CN113001391A, 2021-06-22.
[108] 钟汇才, 罗军, 朱慧珑. 绝缘体上鳍片的制造方法. CN: CN112992681A, 2021-06-18.
[109] 崔岩, 罗军, 杨美音, 许静, 张骥. 一种MTJ及其驱动方法和制作方法. CN: CN112928206A, 2021-06-08.
[110] 罗军, 叶甜春. 一种半导体器件及其制造方法. CN: CN112885724A, 2021-06-01.
[111] 刘金彪, 罗军, 李俊峰, 叶甜春. 一种半导体器件的制造方法. CN: CN112885715A, 2021-06-01.
[112] 毛淑娟, 刘战峰, 殷华湘, 刘金彪, 王桂磊, 李永亮, 罗军. 一种NMOS晶体管及其制造方法、三维异质集成芯片. CN: CN112864229A, 2021-05-28.
[113] 崔岩, 罗军, 杨美音, 许静, 张骥. 一种基于MTJ的真随机数发生器. CN: CN112835556A, 2021-05-25.
[114] 邓坚, 罗军, 赵超. 半导体器件及其制造方法. CN: CN112802798A, 2021-05-14.
[115] 李梦华, 罗军, 许静. MOS晶体管及利用离子注入提高源漏掺杂浓度的方法. CN: CN112652663A, 2021-04-13.
[116] 张丹, 罗军, 许静, 叶甜春. 金属互连结构、半导体器件及提高扩散阻挡层性能的方法. CN: CN112652607A, 2021-04-13.
[117] 刘金彪, 罗军, 李俊峰, 叶甜春. 形成源/漏接触的方法及晶体管的制作方法. CN: CN112635314A, 2021-04-09.
[118] 师文生, 李生阳, 罗军, 佘广为, 许静. 一种B掺杂的NiSi/n-Si光电阳极及其制备方法和应用. CN: CN109904251B, 2021-03-30.
[119] 杨美音, 罗军, 崔岩, 许静. 一种磁性隧道结及其制造方法、存储单元. CN: CN112563411A, 2021-03-26.
[120] 朱慧珑, 李春荣, 罗军. 半导体器件的形成方法. CN: CN112309871A, 2021-02-02.
[121] 杨美音, 崔岩, 罗军, 许静. 一种存储器件. CN: CN112054033A, 2020-12-08.
[122] 王素梅, 罗军, 赵超, 王文武, 叶甜春. 一种振荡器及其制造方法. CN: CN112038483A, 2020-12-04.
[123] 杨美音, 高建峰, 崔岩, 罗军, 许静. 一种磁性随机存储器及其制造方法. CN: CN111952438A, 2020-11-17.
[124] 毛淑娟, 罗军, 许静. Ge基NMOS晶体管及其制作方法. CN: CN111463133A, 2020-07-28.
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[146] 崔岩, 罗军, 杨美音, 许静. 基于磁隧道结的存储器及其读写方法、制作方法. CN: CN110277115A, 2019-09-24.
[147] 崔岩, 罗军, 杨美音, 许静. 磁性单粒子探测装置及其制造方法、磁性单粒子探测方法. CN: CN110161113A, 2019-08-23.
[148] 崔岩, 罗军, 杨美音, 许静. 隧穿磁电阻传感器的调控方法及系统. CN: CN110109039A, 2019-08-09.
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[150] 崔岩, 罗军, 杨美音, 许静. 一种磁隧道结的形成方法及磁阻式随机存储器. CN: CN110061128A, 2019-07-26.
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[152] 杨美音. 一种存储器件. CN: CN110061002A, 2019-07-26.
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[154] 亨利·H·阿达姆松, 王桂磊, 罗军",null,null,"王文武. 半导体结构与其制作方法. CN: CN109950153A, 2019-06-28.
[155] 亨利·H·阿达姆松",null,null,null,"王文武. 半导体结构与其制作方法. CN: CN109920738A, 2019-06-21.
[156] 王文, 罗军, 许静. 芯片的切割方法. CN: CN109920759A, 2019-06-21.
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[169] 杨美音, 罗军. 自旋轨道转矩磁阻式随机存储器及写入方法、装置. CN: CN109585644A, 2019-04-05.
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出版信息

   
发表论文
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[163] Wang Guilei, Xu Qiang, Yang Tao, Luo Jun, Xiang Jinjuan, Xu Jing, Xu Gaobo, Li Chunlong, Li Junfeng, Yan Jiang, Zhao Chao, Chen Dapeng, Ye Tianchun, Roozeboom F, Delabie A, Londergan A, DeGendt S, Elam JW, VanDerStraten O. Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology. ATOMIC LAYER DEPOSITION APPLICATIONS 9null. 2013, 58(10): 317-324, [164] Cui Hushan, Xu Jing, Gao Jianfeng, Xiang Jinjuan, Lu Yihong, Tang Zhaoyun, He Xiaobin, Li Tingting, Luo Jun, Wang Xiaolei, Tang Bo, Yu Jiahan, Yang Tao, Yan Jiang, Li Junfeng, Zhao Chao, Hattori T, Ruzyllo J, Mertens P, Novak RE. Evaluation of TaN as the Wet Etch Stop Layer during the 22nm HKMG Gate Last CMOS Integrations. SEMICONDUCTOR CLEANING SCIENCE AND TECHNOLOGY 13 (SCST 13)null. 2013, 58(6): 111-118, [165] 包琦龙, 丛宏林, 徐小明, 江忠永, 张昊翔, 罗军, 赵超. 100mm直径硅衬底上MOCVD外延生长无裂纹GaN. 半导体技术[J]. 2013, 38(2): 130-134, http://www.irgrid.ac.cn/handle/1471x/1091017.
[166] 江忠永, 丛宏林, 徐小明, 包琦龙, 张昊翔, 罗军, 赵超. Si衬底上MOCVD生长AlN的预铺铝机理研究. 半导体技术[J]. 2013, 38(4): 292-296, http://www.irgrid.ac.cn/handle/1471x/1091019.
[167] Xu, Peng, Fu, Chaochao, Hu, Cheng, Zhang, David Wei, Wu, Dongping, Luo, Jun, Zhao, Chao, Zhang, ZhiBin, Zhang, ShiLi. Ultra-shallow junctions formed using microwave annealing. APPLIED PHYSICS LETTERS[J]. 2013, 102(12): http://www.irgrid.ac.cn/handle/1471x/1091011.
[168] Mao ShuJuan, Luo Jun, Yan Jiang, Tang TA, Jiang YL. Gap Fill Capability of Ni PVD Based on Silicide-last Process. 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012)null. 2012, 1103-1105, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000319824700310.
[169] Piao, Yinghua, Zhu, Zhiwei, Gao, Xindong, Karabko, Aliaksandra, Hu, Cheng, Qiu, Zhijun, Luo, Jun, Zhang, ZhiBin, Zhang, ShiLi, Wu, Dongping. Extensive Raman spectroscopic investigation of ultrathin Co1-xNixSi2 films grown on Si(100). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A[J]. 2012, 30(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000306142800045.
[170] Song, Yi, Xu, Qiuxia, Luo, Jun, Zhou, Huajie, Niu, Jiebin, Liang, Qingqing, Zhao, Chao. Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2012, 59(7): 1885-1890, http://dx.doi.org/10.1109/TED.2012.2194785.
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发表著作
(1) Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs, World Scientific Publishing Company, 2017-06, 第 2 作者
(2) CMOS: Past, Present and Future, Woodhead Publishing, 2018-04, 第 2 作者

科研活动

   
科研项目
( 1 ) 高k金属栅与全硅化物Fin源漏, 参与, 国家任务, 2015-01--2018-12
( 2 ) 场发射枪扫描电子显微镜, 参与, 国家任务, 2013-09--2018-09
( 3 ) 基于微纳电子技术, 参与, 中国科学院计划, 2015-08--2019-09
( 4 ) 先导集成电路器件及电路, 参与, 中国科学院计划, 2012-12--2016-12
( 5 ) 青年创新促进会, 负责人, 中国科学院计划, 2011-01--2020-12
( 6 ) 体硅FinFET 与关键工艺研究, 参与, 国家任务, 2013-01--2016-12
( 7 ) 新型低温MRAM器件研究, 负责人, 中国科学院计划, 2018-01--2023-01
( 8 ) 自旋逻辑器件结构设计、磁隧道结制备及性能优化, 负责人, 其他任务, 2018-01--2018-12
( 9 ) 1X纳米FDSOI先导工艺研究, 负责人, 研究所自选, 2020-05--2022-05
( 10 ) 自旋轨道矩随机存取存储器研究, 负责人, 企业委托, 2020-05--2022-05
( 11 ) 自旋逻辑器件结构设计、磁隧道结制备及性能优化, 负责人, 其他任务, 2020-05--2021-05
( 12 ) 青促会优秀会员, 负责人, 中国科学院计划, 2020-01--2023-01
( 13 ) 基于FDSOI工艺的物联网智能感知与 嵌入式存储电路的核心技术研究, 负责人, 地方任务, 2021-05--2024-05
( 14 ) 基于2X纳米及以下FDSOI技术的先导工艺研究及低功耗物联网特色引导芯片研发, 负责人, 地方任务, 2021-09--2024-09
( 15 ) 面向先进逻辑制程的STT-eMRAM存储单元设计和工艺技术研究, 负责人, 其他任务, 2021-05--2023-12
( 16 ) GAA和FDSOI器件与先进制造核心技术, 负责人, 中国科学院计划, 2022-11--2025-10
参与会议
(1)先进CMOS接触工艺技术   全国半导体物理学术会议   Jun Luo   2021-07-09
(2)Impact of Ge Pre-amorphization Implantation (PAI) on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity (c) in TiSix/n+-Si Contacts   Jun Luo   2018-06-18
(3)Improved Ti Germanosilicidation by Ge Pre-Amorphization Implantation (PAI) for Advanced Contact Technology   Jun Luo   2018-03-18
(4)Improved Ti Silicidation by Ge Pre-amorphization Implantation (PAI) for Advanced Contact Technologies   Jun Luo   2018-03-08
(5)Advanced Silicide/Germanide technology for sub­16/14 nm node devices   Jun Luo   2017-10-18
(6)On the Manipulation of Phosphorus Diffusion As Well As the Reduction of Specific Contact Resistivity in Ge By Carbon Co-Doping   2016-10-02

指导学生

已指导学生

李昱东  博士研究生  080903-微电子学与固体电子学  

张韫韬  硕士研究生  085209-集成电路工程  

王文  硕士研究生  085209-集成电路工程  

田阳雨  硕士研究生  085209-集成电路工程  

盛捷  硕士研究生  085208-电子与通信工程  

张国栋  硕士研究生  085208-电子与通信工程  

孙祥烈  硕士研究生  085208-电子与通信工程  

马浩东  硕士研究生  085208-电子与通信工程  

何国伟  硕士研究生  085208-电子与通信工程  

侯西亮  硕士研究生  080903-微电子学与固体电子学  

李梦华  硕士研究生  085209-集成电路工程  

谭鑫广  硕士研究生  085209-集成电路工程  

周雪冰  硕士研究生  080903-微电子学与固体电子学  

杨腾智  博士研究生  080903-微电子学与固体电子学  

张丹  博士研究生  080903-微电子学与固体电子学  

刘耀东  博士研究生  080903-微电子学与固体电子学  

李彦如  博士研究生  080903-微电子学与固体电子学  

徐步青  博士研究生  080903-微电子学与固体电子学  

熊文娟  博士研究生  080903-微电子学与固体电子学  

现指导学生

陈佳  博士研究生  080903-微电子学与固体电子学  

孔梦娟  硕士研究生  085400-电子信息  

孙祥烈  博士研究生  080903-微电子学与固体电子学  

邹思楠  硕士研究生  080903-微电子学与固体电子学  

曹纬  博士研究生  080903-微电子学与固体电子学  

赵磊  博士研究生  080903-微电子学与固体电子学  

王欣哲  硕士研究生  085400-电子信息  

何燕萍  博士研究生  080903-微电子学与固体电子学  

高海粟  硕士研究生  085400-电子信息  

杨博文  硕士研究生  085400-电子信息  

陈博涵  硕士研究生  085400-电子信息  

陈旭  博士研究生  080903-微电子学与固体电子学  

黄真  博士研究生  080903-微电子学与固体电子学  

童克友  硕士研究生  080903-微电子学与固体电子学  

刘超  博士研究生  080903-微电子学与固体电子学