纳米材料物理与器件
主要研究内容包括制备一维或二维纳米材料（如碳纳米管、石墨烯、纳米线等），利用微纳加工技术制作纳米尺度电子学/光学器件，并研究器件的基本的物理特性。
 

   

1995-1999 山东大学物理系，本科
1999-2004 中科院物理研究所，硕博联读
 2002-2003 德国弗朗合费研究所，交换学生
2004-2008 美国斯坦福大学化学系，博士后

1999 山东大学物理系，学士
2004 中科院物理研究所，博士

2002-2003 德国弗朗合费研究所
2004-2008 美国斯坦福大学化学系

   

2008.5-2009.2 中科院物理研究所纳米实验室N04组，****研究员
2009.3-- 中科院物理研究所纳米实验室N07组，课题组长

   

2004 中科院院长奖学金特别奖
2004 54届德国林岛诺贝尔奖获得者报告会中国学生代表
2005 中科院50篇优秀博士毕业论文奖
2006 全国百篇优秀博士毕业论文奖

欧洲专利一项 （已捐出）
美国专利两项

   

[1] Liao, Mengzhou, Nicolini, Paolo, Du, Luojun, Yuan, Jiahao, Wang, Shuopei, Yu, Hua, Tang, Jian, Cheng, Peng, Watanabe, Kenji, Taniguchi, Takashi, Gu, Lin, Claerbout, Victor E P, Silva, Andrea, Kramer, Denis, Polcar, Tomas, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. UItra-low friction and edge-pinning effect in large-lattice-mismatch van der Waals heterostructures. NATURE MATERIALS[J]. 2022, 21(1): 47-+, http://dx.doi.org/10.1038/s41563-021-01058-4.
[2] 赵岩翀, 薄涛, 杜罗军, 田金朋, 李晓梅, Kenji, Watanabe, Takashi, Taniguchi, 杨蓉, 时东霞, 孟胜, 杨威, 张广宇. Thermally induced band hybridization in bilayer-bilayer MoS2/WS2 heterostructure*. CHINESE PHYSICS B[J]. 2021, 30(5): 170-175, https://www.webofscience.com/wos/woscc/full-record/WOS:000647653900001.
[3] Shen, Cheng, Ying, Jianghua, Liu, Le, Liu, Jianpeng, Li, Na, Wang, Shuopei, Tang, Jian, Zhao, Yanchong, Chu, Yanbang, Watanabe, Kenji, Taniguchi, Takashi, Yang, Rong, Shi, Dongxia, Qu, Fanming, Lu, Li, Yang, Wei, Zhang, Guangyu. Emergence of Chern insulating states in non-Magic angle twisted bilayer graphene. 2021, http://arxiv.org/abs/2010.03999.
[4] Tang, Jian, He, Congli, Tang, Jianshi, Yue, Kun, Zhang, Qingtian, Liu, Yizhou, Wang, Qinqin, Wang, Shuopei, Li, Na, Shen, Cheng, Zhao, Yanchong, Liu, Jieying, Yuan, Jiahao, Wei, Zheng, Li, Jiawei, Watanabe, Kenji, Taniguchi, Takashi, Shang, Dashan, Wang, Shouguo, Yang, Wei, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. A Reliable All-2D Materials Artificial Synapse for High Energy-Efficient Neuromorphic Computing. ADVANCED FUNCTIONAL MATERIALS[J]. 2021, 31(27): http://dx.doi.org/10.1002/adfm.202011083.
[5] Guangyu Zhang. From magic angle twisted bilayer graphene to moiré superlattice quantum simulator. Acta Phys. Sin.. 2021, [6] Wei, Zheng, Tang, Jian, Li, Xuanyi, Chi, Zhen, Wang, Yu, Wang, Qinqin, Han, Bo, Li, Na, Huang, Biying, Li, Jiawei, Yu, Hua, Yuan, Jiahao, Chen, Hailong, Sun, Jiatao, Chen, Lan, Wu, Kehui, Gao, Peng, He, Congli, Yang, Wei, Shi, Dongxia, Yang, Rong, Zhang, Guangyu. Wafer-Scale Oxygen-Doped MoS2 Monolayer. SMALL METHODS[J]. 2021, 5(6): http://dx.doi.org/10.1002/smtd.202100091.
[7] Guangyu Zhang. Structural Superlubricity in 2D van der Waals Heterojunctions. Nanotechnology. 2021, [8] Li, Na, Wang, Qinqin, Shen, Cheng, Wei, Zheng, Yu, Hua, Zhao, Jing, Lu, Xiaobo, Wang, Guole, He, Congli, Xie, Li, Zhu, Jianqi, Du, Luojun, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors. NATURE ELECTRONICS[J]. 2020, 3(11): 711-717, [9] Shen, Cheng, Chu, Yanbang, Wu, QuanSheng, Li, Na, Wang, Shuopei, Zhao, Yanchong, Tang, Jian, Liu, Jieying, Tian, Jinpeng, Watanabe, Kenji, Taniguchi, Takashi, Yang, Rong, Meng, Zi Yang, Shi, Dongxia, Yazyev, Oleg, V, Zhang, Guangyu. Correlated states in twisted double bilayer graphene. NATURE PHYSICS[J]. 2020, 16(5): 520-+, [10] Mengzhou Liao, Zheng Wei, Luojun Du, Qinqin Wang, Jian Tang, Hua Yu, Fanfan Wu, Jiaojiao Zhao, Xiaozhi Xu, Bo Han, Kaihui Liu, Peng Gao, Tomas Polcar, Zhipei Sun, Dongxia Shi, Rong Yang, Guangyu Zhang. Precise control of the interlayer twist angle in large scale MoS2 homostructures. NATURE COMMUNICATIONS[J]. 2020, 11(1): https://doaj.org/article/2dd39e609be548a1a962c08c4961a9f6.
[11] Wang, Qinqin, Li, Na, Tang, Jian, Zhu, Jianqi, Zhang, Qinghua, Jia, Qi, Lu, Ying, Wei, Zheng, Yu, Hua, Zhao, Yanchong, Guo, Yutuo, Gu, Lin, Sun, Gang, Yang, Wei, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes. NANO LETTERS[J]. 2020, 20(10): 7193-7199, https://www.webofscience.com/wos/woscc/full-record/WOS:000598727300034.
[12] Guangyu Zhang. Yanchong Zhao, Luojun Du*, Wei Yang, Cheng Shen, Jian Tang, Xiaomei Li, Yanbang Chu, Jinpeng Tian, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Zhipei Sun, and Guangyu Zhang*, Observation of logarithmic Kohn anomaly in monolayer graphene. Phys. Rev. B. 2020, [13] Tang, Jian, Wang, Qinqin, Wei, Zheng, Shen, Cheng, Lu, Xiaobo, Wang, Shuopei, Zhao, Yanchong, Liu, Jieying, Li, Na, Chu, Yanbang, Tian, Jinpeng, Wu, Fanfan, Yang, Wei, He, Congli, Yang, Rong, Shi, Dongxia, Watanabe, Kenji, Taniguchi, Takashi, Zhang, Guangyu. Vertical Integration of 2D Building Blocks for All-2D Electronics. ADVANCED ELECTRONIC MATERIALS[J]. 2020, 6(12): http://dx.doi.org/10.1002/aelm.202000550.
[14] Du, Luojun, Zhang, Qian, Gong, Benchao, Liao, Mengzhou, Zhu, Jianqi, Yu, Hua, He, Rui, Liu, Kai, Yang, Rong, Shi, Dongxia, Gu, Lin, Yan, Feng, Zhang, Guangyu, Zhang, Qingming. Robust spin-valley polarization in commensurate MoS2/graphene heterostructures. PHYSICAL REVIEW B[J]. 2018, 97(11): http://dx.doi.org/10.1103/PhysRevB.97.115445.
[15] Du, Luojun, Liao, Mengzhou, Tang, Jian, Zhang, Qian, Yu, Hua, Yang, Rong, Watanabe, Kenji, Taniguchi, Takashi, Shi, Dongxia, Zhang, Qingming, Zhang, Guangyu. Strongly enhanced exciton-phonon coupling in two-dimensional WSe2. PHYSICAL REVIEW B[J]. 2018, 97(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000436192300004.
[16] 刘乐, 汤建, 王琴琴, 时东霞, 张广宇. 石墨烯封装单层二硫化钼的热稳定性研究. 物理学报[J]. 2018, 67(22): 226501-1, http://lib.cqvip.com/Qikan/Article/Detail?id=676852772.
[17] Mengzhou Liao, ZeWen Wu, Luojun Du, Tingting Zhang, Zheng Wei, Jianqi Zhu, Hua Yu, Jian Tang, Lin Gu, Yanxia Xing, Rong Yang, Dongxia Shi, Yugui Yao, Guangyu Zhang. Twist angle-dependent conductivities across MoS2/graphene heterojunctions. NATURE COMMUNICATIONS[J]. 2018, 9(1): http://dx.doi.org/10.1038/s41467-018-06555-w.
[18] Yang, Wei, Berthou, Simon, Lu, Xiaobo, Wilmart, Quentin, Denis, Anne, Rosticher, Michael, Taniguchi, Takashi, Watanabe, Kenji, Feve, Gwendal, Berroir, JeanMarc, Zhang, Guangyu, Voisin, Christophe, Baudin, Emmanuel, Placais, Bernard. A graphene Zener-Klein transistor cooled by a hyperbolic substrate. NATURE NANOTECHNOLOGY[J]. 2018, 13(1): 47-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000419783900018.
[19] Zhang, Yue, Zhu, Jianqi, Li, Pingxue, Wang, Xiaoxiao, Yu, Hua, Xiao, Kun, Li, Chunyong, Zhang, Guangyu. All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber. OPTICS COMMUNICATIONS[J]. 2018, 413: 236-241, https://www.webofscience.com/wos/woscc/full-record/WOS:000425123400037.
[20] Du, Luojun, Jia, Zhiyan, Zhang, Qian, Zhang, Anmin, Zhang, Tingting, He, Rui, Yang, Rong, Shi, Dongxia, Yao, Yugui, Xiang, Jianyong, Zhang, Guangyu, Zhang, Qingming. Electronic structure-dependent magneto-optical Raman effect in atomically thin WS2. 2D MATERIALS[J]. 2018, 5(3): http://dx.doi.org/10.1088/2053-1583/aac593.
[21] Wu, Shuang, Liu, Bing, Shen, Cheng, Li, Si, Huang, Xiaochun, Lu, Xiaobo, Chen, Peng, Wang, Guole, Wang, Duoming, Liao, Mengzhou, Zhang, Jing, Zhang, Tingling, Wang, Shuopei, Yang, Wei, Yang, Rong, Shi, Dongxia, Watanabe, Kenji, Taniguchi, Takashi, Yao, Yugui, Wang, Weihua, Zhang, Guangyu. Magnetotransport Properties of Graphene Nanoribbons with Zigzag Edges. PHYSICAL REVIEW LETTERS[J]. 2018, 120(21): http://dx.doi.org/10.1103/PhysRevLett.120.216601.
[22] Du, Luojun, Zhang, Tingting, Liao, Mengzhou, Liu, Guibin, Wang, Shuopei, He, Rui, Ye, Zhipeng, Yu, Hua, Yang, Rong, Shi, Dongxia, Yao, Yugui, Zhang, Guangyu. Temperature-driven evolution of critical points, interlayer coupling, and layer polarization in bilayer MoS2. PHYSICAL REVIEW B[J]. 2018, 97(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000429455900009.
[23] 时东霞. 高质量单层二硫化钼薄膜的研究进展. 物理学报. 2018, [24] Yang, Xianzhong, Yu, Hua, Guo, Xiao, Ding, Qianqian, Pullerits, Tonu, Wang, Rongming, Zhang, Guangyu, Liang, Wenjie, Sun, Mengtao. Plasmon-exciton coupling of monolayer MoS2-Ag nanoparticles hybrids for surface catalytic reaction. MATERIALS TODAY ENERGY[J]. 2017, 5: 72-78, http://dx.doi.org/10.1016/j.mtener.2017.05.005.
[25] Liu, Renwei, Fan, Suna, Xiao, Dongdong, Zhang, Jin, Liao, Mengzhou, Yu, Shansheng, Meng, Fanling, Liu, Baoli, Gu, Lin, Meng, Sheng, Zhang, Guangyu, Zheng, Weitao, Hu, Shuxin, Li, Ming. Free-Standing Single-Molecule Thick Crystals Consisting of Linear Long-Chain Polymers. NANO LETTERS[J]. 2017, 17(3): 1655-1659, [26] Zhu, Jianqi, Wang, Zhichang, Yu, Hua, Li, Na, Zhang, Jing, Meng, JianLing, Liao, Mengzhou, Zhao, Jing, Lu, Xiaobo, Du, Luojun, Yang, Rong, Shi, Dong, Jiang, Ying, Zhang, Guanyu. Argon Plasma Induced Phase Transition in Monolayer MoS2. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY[J]. 2017, 139(30): 10216-10219, https://www.webofscience.com/wos/woscc/full-record/WOS:000407089500013.
[27] Zhao, Weifang, Yu, Hua, Liao, Mengzhou, Zhang, Ling, Zou, Shuzhen, Yu, Haijuan, He, Chaojian, Zhang, Jingyuan, Zhang, Guangyu, Lin, Xuechun. Large area growth of monolayer MoS2 film on quartz and its use as a saturable absorber in laser mode-locking. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2017, 32(2): http://dx.doi.org/10.1088/1361-6641/32/2/025013.
[28] Xie, Li, Liao, Mengzhou, Wang, Shuopei, Yu, Hua, Du, Luojun, Tang, Jian, Zhao, Jing, Zhang, Jing, Chen, Peng, Lu, Xiaobo, Wang, Guole, Xie, Guibai, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors. ADVANCED MATERIALS[J]. 2017, 29(37): https://www.webofscience.com/wos/woscc/full-record/WOS:000412184100020.
[29] Zhang, Tingting, Wu, Shuang, Yang, Rong, Zhang, Guangyu. Graphene: Nanostructure engineering and applications. FRONTIERS OF PHYSICS[J]. 2017, 12(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000394183200010.
[30] Zhang, TingTing, Yu, ZhiMing, Guo, Wei, Shi, Dongxia, Zhang, Guangyu, Yao, Yugui. From Type-II Triply Degenerate Nodal Points and Three-Band Nodal Rings to Type-II Dirac Points in Centrosymmetric Zirconium Oxide. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2017, 8(23): 5792-5797, http://dx.doi.org/10.1021/acs.jpclett.7b02642.
[31] Xie, Li, Du, Luojun, Lu, Xiaobo, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. A facile and efficient dry transfer technique for two-dimensional Van der Waals heterostructure. CHINESE PHYSICS B[J]. 2017, 26(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000407023200001.
[32] 张广宇. 锯齿形石墨烯反点网络加工与输运性质研究. 物理学报. 2017, [33] Yu, Hua, Liao, Mengzhou, Zhao, Wenjuan, Liu, Guodong, Zhou, X J, Wei, Zheng, Xu, Xiaozhi, Liu, Kaihui, Hu, Zonghai, Deng, Ke, Zhou, Shuyun, Shi, JinAn, Gu, Lin, Shen, Cheng, Zhang, Tingting, Du, Luojun, Xie, Li, Zhu, Jianqi, Chen, Wei, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films. ACS NANO[J]. 2017, 11(12): 12001-12007, https://www.webofscience.com/wos/woscc/full-record/WOS:000418990200025.
[34] Liu, Ruina, Liao, Baoxin, Guo, Xiangdong, Hu, Debo, Hu, Hai, Du, Luojun, Yu, Hua, Zhang, Guangyu, Yang, Xiaoxia, Dai, Qing. Study of graphene plasmons in graphene-MoS2 heterostructures for optoelectronic integrated devices. NANOSCALE[J]. 2017, 9(1): 208-215, https://www.webofscience.com/wos/woscc/full-record/WOS:000391739300027.
[35] Zhao, Jing, Li, Na, Yu, Hua, Wei, Zheng, Liao, Mengzhou, Chen, Peng, Wang, Shuopei, Shi, Dongxia, Sun, Qijun, Zhang, Guangyu. Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation. ADVANCED MATERIALS[J]. 2017, 29(34): https://www.webofscience.com/wos/woscc/full-record/WOS:000409448300017.
[36] Chen, Guorui, Sui, Mengqiao, Wang, Duoming, Wang, Shuopei, Jung, Jeil, Moon, Pilkyung, Adam, Shaffique, Watanabe, Kenji, Taniguchi, Takashi, Zhou, Shuyun, Koshino, Mikito, Zhang, Guangyu, Zhane, Yuanbo. Emergence of Tertiary Dirac Points in Graphene Moire Superlattices. NANO LETTERS[J]. 2017, 17(6): 3576-3581, http://dx.doi.org/10.1021/acs.nanolett.7b00735.
[37] Zhao, Jing, Chen, Wei, Meng, Jianling, Yu, Hua, Liao, Mengzhou, Zhu, Jianqi, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Integrated Flexible and High-Quality Thin Film Transistors Based on Monolayer MoS2. ADVANCED ELECTRONIC MATERIALS[J]. 2016, 2(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000372922800016.
[38] Wang GuoLe, Xie Li, Chen Peng, Yang Rong, Shi DongXia, Zhang GuangYu. Anisotropic etching of bilayer graphene controlled by gate voltage. ACTA PHYSICA SINICA[J]. 2016, 65(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000387141500022.
[39] Shao, PengZhi, Zhao, HaiMing, Cao, HuiWen, Wang, XueFeng, Pang, Yu, Li, YuXing, Deng, NingQin, Zhang, Jing, Zhang, GuangYu, Yang, Yi, Zhang, Sheng, Ren, TianLing. Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer. APPLIED PHYSICS LETTERS[J]. 2016, 108(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000377024000042.
[40] Wang, Guole, Wu, Shuang, Zhang, Tingting, Chen, Peng, Lu, Xiaobo, Wang, Shuopei, Wang, Duoming, Watanabe, Kenji, Taniguchi, Takashi, Shi, Dongxia, Yang, Rong, Zhang, Guangyu. Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching. APPLIED PHYSICS LETTERS[J]. 2016, 109(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000383091400032.
[41] Wang, Guocai, Bao, Lihong, Pei, Tengfei, Ma, Ruisong, Zhang, YuYang, Sun, Liling, Zhang, Guangyu, Yang, Haifan, Li, Junjie, Gu, Changzhi, Du, Shixuan, Pantelides, Sokrates T, Schrimpf, Ronald D, Gao, Hongjun. Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices. NANO LETTERS[J]. 2016, 16(11): 6870-6878, https://www.webofscience.com/wos/woscc/full-record/WOS:000387625000024.
[42] Du, Luojun, Yu, Hua, Xie, Li, Wu, Shuang, Wang, Shuopei, Lu, Xiaobo, Liao, Mengzhou, Meng, Jianling, Zhao, Jing, Zhang, Jing, Zhu, Jianqi, Chen, Peng, Wang, Guole, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2. CRYSTALS[J]. 2016, 6(9): https://doaj.org/article/c0e87dca2dc74fd48934d9db5e9af1a3.
[43] Yang, Wei, Lu, Xiaobo, Chen, Guorui, Wu, Shuang, Xie, Guibai, Cheng, Meng, Wang, Duoming, Yang, Rong, Shi, Dongxia, Watanabe, Kenji, Taniguchi, Takashi, Voisin, Christophe, Placais, Bernard, Zhang, Yuanbo, Zhang, Guangyu. Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice. NANO LETTERS[J]. 2016, 16(4): 2387-2392, [44] Wang, Duoming, Chen, Guorui, Li, Chaokai, Cheng, Meng, Yang, Wei, Wu, Shuang, Xie, Guibai, Zhang, Jing, Zhao, Jing, Lu, Xiaobo, Chen, Peng, Wang, Guole, Meng, Jianling, Tang, Jian, Yang, Rong, He, Congli, Liu, Donghua, Shi, Dongxia, Watanabe, Kenji, Taniguchi, Takashi, Feng, Ji, Zhang, Yuanbo, Zhang, Guangyu. Thermally Induced Graphene Rotation on Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS[J]. 2016, 116(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000372728300001.
[45] Guangyu Zhang. Precisely Aligned Monolayer MoS2 Epitax- ially Grown on h-BN basal Plane. Small. 2016, [46] Jia, Chuancheng, Migliore, Agostino, Xin, Na, Huang, Shaoyun, Wang, Jinying, Yang, Qi, Wang, Shuopei, Chen, Hongliang, Wang, Duoming, Feng, Boyong, Liu, Zhirong, Zhang, Guangyu, Qu, DaHui, Tian, He, Ratner, Mark A, Xu, H Q, Nitzan, Abraham, Guo, Xuefeng. Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity. SCIENCE[J]. 2016, 352(6292): 1443-1445, https://www.webofscience.com/wos/woscc/full-record/WOS:000377975400044.
[47] Huang, Yinjuan, Mai, Yiyong, Beser, Uliana, Teyssandier, Joan, Velpula, Gangamallaiah, van Gorp, Hans, Straaso, Lasse Arnt, Hansen, Michael Ryan, Rizzo, Daniele, Casiraghi, Cinzia, Yang, Rong, Zhang, Guangyu, Wu, Dongqing, Zhang, Fan, Yan, Deyue, De Feyter, Steven, Muellen, Klaus, Feng, Xinliang. Poly(ethylene oxide) Functionalized Graphene Nanoribbons with Excellent Solution Processability. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY[J]. 2016, 138(32): 10136-10139, http://dx.doi.org/10.1021/jacs.6b07061.
[48] Zhao, Jing, Yu, Hua, Chen, Wei, Yang, Rong, Zhu, Jianqi, Liao, Mengzhou, Shi, Dongxia, Zhang, Guangyu. Patterned Peeling 2D MoS2 off the Substrate. ACS APPLIED MATERIALS & INTERFACES[J]. 2016, 8(26): 16546-16550, https://www.webofscience.com/wos/woscc/full-record/WOS:000379456000002.
[49] Meng, Jianling, Wang, Guole, Li, Xiaomin, Lu, Xiaobo, Zhang, Jing, Yu, Hua, Chen, Wei, Du, Luojun, Liao, Mengzhou, Zhao, Jing, Chen, Peng, Zhu, Jianqi, Bai, Xuedong, Shi, Dongxia, Zhang, Guangyu. Rolling Up a Monolayer MoS2 Sheet. SMALL[J]. 2016, 12(28): 3770-3774, https://www.webofscience.com/wos/woscc/full-record/WOS:000383375100004.
[50] Chen, Peng, Zhang, Ting Ting, Zhang, Jing, Xiang, Jianyong, Yu, Hua, Wu, Shuang, Lu, Xiaobo, Wang, Guole, Wen, Fusheng, Liu, Zhongyuan, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Gate tunable WSe2-BP van der Waals heterojunction devices. NANOSCALE[J]. 2016, 8(6): 3254-3258, https://www.webofscience.com/wos/woscc/full-record/WOS:000369908900010.
[51] Hailong Chen, Xiewen Wen, Jing Zhang, Tianmin Wu, Yongji Gong, Xiang Zhang, Jiangtan Yuan, Chongyue Yi, Jun Lou, Pulickel M Ajayan, Wei Zhuang, Guangyu Zhang, Junrong Zheng. Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures. NATURE COMMUNICATIONS[J]. 2016, 7(1): http://ir.iccas.ac.cn/handle/121111/35343.
[52] Lu, Xiaobo, Yang, Wei, Wang, Shuopei, Wu, Shuang, Chen, Peng, Zhang, Jing, Zhao, Jing, Meng, Jianling, Xie, Guibai, Wang, Duoming, Wang, Guole, Zhang, Ting Ting, Watanabe, Kenji, Taniguchi, Takashi, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Graphene nanoribbons epitaxy on boron nitride. APPLIED PHYSICS LETTERS[J]. 2016, 108(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000373058400037.
[53] Eryin Wang, Guorui Chen, Guoliang Wan, Xiaobo Lu, Chaoyu Chen, Jose Avila, Alexei V Fedorov, Guangyu Zhang, Maria C Asensio, Yuanbo Zhang, Shuyun Zhou. Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES. Journal of physics. Condensed matter: an Institute of Physics Journal. 2016, 28(44): http://kns.cnki.net/KCMS/detail/detail.aspx?QueryID=0&CurRec=61&recid=&FileName=SIPDBC27D44E6F8468C0E092E99D7F5CDD72&DbName=WWMERGEJ01&DbCode=WWME&yx=&pr=&URLID=&bsm=.
[54] Zhao, Zhiyuan, Liu, Hongtao, Zhao, Yan, Cheng, Cheng, Zhao, Jing, Tang, Qingxin, Zhang, Guangyu, Liu, Yunqi. Anisotropic Charge-Carrier Transport in High-Mobility Donor-Acceptor Conjugated Polymer Semiconductor Films. CHEMISTRY-AN ASIAN JOURNAL[J]. 2016, 11(19): 2725-2729, http://ir.iccas.ac.cn/handle/121111/35112.
[55] Wang, Eryin, Lu, Xiaobo, Ding, Shijie, Yao, Wei, Yan, Mingzhe, Wan, Guoliang, Deng, Ke, Wang, Shuopei, Chen, Guorui, Ma, Liguo, Jung, Jeil, Fedorov, Alexei V, Zhang, Yuanbo, Zhang, Guangyu, Zhou, Shuyun. Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride. NATURE PHYSICS[J]. 2016, 12(12): 1111-+, http://dx.doi.org/10.1038/NPHYS3856.
[56] Patrick Gallagher, Menyoung Lee, Francois Amet, Petro Maksymovych, Jun Wang, Shuopei Wang, Xiaobo Lu, Guangyu Zhang, Kenji Watanabe, Takashi Taniguchi, David GoldhaberGordon. Switchable friction enabled by nanoscale self-assembly on graphene. NATURE COMMUNICATIONS[J]. 2016, 7(1): https://doaj.org/article/877818a8248d489a95541eb063a95d47.
[57] 张广宇. 退火对单层二硫化钼荧光特性的影响. 化学学报. 2015, [58] Lu XiaoBo, Zhang GuangYu. Graphene/h-BN Moire superlattice. ACTA PHYSICA SINICA[J]. 2015, 64(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000354058800041.
[59] Chen, Wei, Zhao, Jing, Zhang, Jing, Gu, Lin, Yang, Zhenzhong, Li, Xiaomin, Yu, Hua, Zhu, Xuetao, Yang, Rong, Shi, Dongxia, Lin, Xuechun, Guo, Jiandong, Bai, Xuedong, Zhang, Guangyu. Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY[J]. 2015, 137(50): 15632-15635, http://ir.iphy.ac.cn/handle/311004/61063.
[60] Chen, Peng, Xiang, Jianyong, Yu, Hua, Zhang, Jing, Xie, Guibai, Wu, Shuang, Lu, Xiaobo, Wang, Guole, Zhao, Jing, Wen, Fusheng, Liu, Zhongyuan, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Gate tunable MoS2-black phosphorus heterojunction devices. 2D MATERIALS[J]. 2015, 2(3): http://ir.iphy.ac.cn/handle/311004/60121.
[61] Guangyu Zhang. Observation of Strong Interlayer Cou- pling in MoS2/WS2 heterostructures. Advanced Materials. 2015, [62] Li, Xuefei, Lu, Xiaobo, Li, Tiaoyang, Yang, Wei, Fang, Jianming, Zhang, Guangyu, Wu, Yanqing. Noise in Graphene Super lattices Grown on Hexagonal Boron Nitride. ACS NANO[J]. 2015, 9(11): 11382-11388, http://ir.iphy.ac.cn/handle/311004/60152.
[63] Meng, Jianling, Yang, Rong, Zhao, Jing, He, Congli, Wang, Guole, Shi, Dongxia, Zhang, Guangyu. Nanographene charge trapping memory with a large memory window. NANOTECHNOLOGY[J]. 2015, 26(45): http://ir.iphy.ac.cn/handle/311004/60695.
[64] Zhao, Jing, Wang, Guole, Yang, Rong, Lu, Xiaobo, Cheng, Meng, He, Congli, Xie, Guibai, Meng, Jianling, Shi, Dongxia, Zhang, Guangyu. Tunable Piezoresistivity of Nanographene Films for Strain Sensing. ACS NANO[J]. 2015, 9(2): 1622-1629, http://ir.iphy.ac.cn/handle/311004/60157.
[65] Wang, Lifen, Liu, Donghua, Yang, Shize, Tian, Xuezeng, Zhang, Guangyu, Wang, Wenlong, Wang, Enge, Xu, Zhi, Bai, Xuedong. Exotic Reaction Front Migration and Stage Structure in Lithiated Silicon Nanowires. ACS NANO[J]. 2014, 8(8): 8249-8254, http://ir.iphy.ac.cn/handle/311004/58791.
[66] Meng, Jianling, Shi, Dongxia, Zhang, Guangyu. A review of nanographene: growth and applications. MODERN PHYSICS LETTERS B[J]. 2014, 28(20): http://ir.iphy.ac.cn/handle/311004/59329.
[67] Yang, Rong, Wu, Shuang, Wang, Duoming, Xie, Guibai, Cheng, Meng, Wang, Guole, Yang, Wei, Chen, Peng, Shi, Dongxia, Zhang, Guangyu. Fabrication of high-quality all-graphene devices with low contact resistances. NANO RESEARCH[J]. 2014, 7(10): 1449-1456, http://ir.iphy.ac.cn/handle/311004/59346.
[68] Guangyu Zhang. A Route towards Digital Manipulation of Water Nanodroplets on Surface. ACS Nano. 2014, [69] Zhang, Jing, Yu, Hua, Chen, Wei, Tian, Xuezeng, Liu, Donghua, Cheng, Meng, Xie, Guibai, Yang, Wei, Yang, Rong, Bai, Xuedong, Shi, Dongxia, Zhang, Guangyu. Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes. ACS NANO[J]. 2014, 8(6): 6024-6030, http://ir.iphy.ac.cn/handle/311004/58793.
[70] Chen, ZhiGuo, Shi, Zhiwen, Yang, Wei, Lu, Xiaobo, Lai, You, Yan, Hugen, Wang, Feng, Zhang, Guangyu, Li, Zhiqiang. Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures. NATURE COMMUNICATIONS[J]. 2014, 5: http://ir.iphy.ac.cn/handle/311004/59383.
[71] Liu, Donghua, Yang, Wei, Zhang, Lianchang, Zhang, Jing, Meng, Jianling, Yang, Rong, Zhang, Guangyu, Shi, Dongxia. Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates. CARBON[J]. 2014, 72: 387-392, http://dx.doi.org/10.1016/j.carbon.2014.02.030.
[72] Liu, Yiwei, Yang, Rong, Yang, Huali, Wang, Duoming, Zhan, Qingfeng, Zhang, Guangyu, Xie, Yali, Chen, Bin, Li, RunWei. Anomalous anisotropic magnetoresistance effects in graphene. AIP ADVANCES[J]. 2014, 4(9): http://ir.iphy.ac.cn/handle/311004/58848.
[73] Shi, Zhiwen, Jin, Chenhao, Yang, Wei, Ju, Long, Horng, Jason, Lu, Xiaobo, Bechtel, Hans A, Martin, Michael C, Fu, Deyi, Wu, Junqiao, Watanabe, Kenji, Taniguchi, Takashi, Zhang, Yuanbo, Bai, Xuedong, Wang, Enge, Zhang, Guangyu, Wang, Feng. Gate-dependent pseudospin mixing in graphene/boron nitride moire superlattices. NATURE PHYSICS[J]. 2014, 10(10): 743-747, http://ir.iphy.ac.cn/handle/311004/59392.
[74] Lin, Jingjing, Guo, Liwei, Jia, Yuping, Yang, Rong, Wu, Shuang, Huang, Jiao, Guo, Yu, Li, Zhilin, Zhang, Guangyu, Chen, Xiaolong. Identification of dominant scattering mechanism in epitaxial graphene on SiC. APPLIED PHYSICS LETTERS[J]. 2014, 104(18): http://dx.doi.org/10.1063/1.4875384.
[75] Jun, L, Velasco, J, Jr, Huang, E, Kahn, S, Nosiglia, C, Tsai, HsinZon, Yang, W, Taniguchi, T, Watanabe, K, Zhang, Y, Zhang, G, Crommie, M, Zettl, A, Wang, F. Photoinduced doping in heterostructures of graphene and boron nitride. NATURE NANOTECHNOLOGY[J]. 2014, 9(5): 348-352, http://ir.iphy.ac.cn/handle/311004/59389.
[76] Xie, Guibai, Yang, Rong, Chen, Peng, Zhang, Jing, Tian, Xuezeng, Wu, Shuang, Zhao, Jing, Cheng, Meng, Yang, Wei, Wang, Duoming, He, Congli, Bai, Xuedong, Shi, Dongxia, Zhang, Guangyu. A General Route Towards Defect and Pore Engineering in Graphene. SMALL[J]. 2014, 10(11): 2280-2284, http://ir.iphy.ac.cn/handle/311004/59743.
[77] Yang, Wei, Chen, Guorui, Shi, Zhiwen, Liu, ChengCheng, Zhang, Lianchang, Xie, Guibai, Cheng, Meng, Wang, Duoming, Yang, Rong, Shi, Dongxia, Watanabe, Kenji, Taniguchi, Takashi, Yao, Yugui, Zhang, Yuanbo, Zhang, Guangyu. Epitaxial growth of single-domain graphene on hexagonal boron nitride. NATURE MATERIALS[J]. 2013, 12(9): 792-797, http://ir.iphy.ac.cn/handle/311004/56973.
[78] Lin, C J, He, X Y, Liao, J, Wang, X X, Sacksteder, V, Yang, W M, Guan, T, Zhang, Q M, Gu, L, Zhang, G Y, Zeng, C G, Dai, X, Wu, K H, Li, Y Q. Parallel field magnetoresistance in topological insulator thin films. PHYSICAL REVIEW B[J]. 2013, 88(4): http://ir.iphy.ac.cn/handle/311004/57316.
[79] Chen Peng, Zhang GuangYu. Carbon-based spintronics. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2013, 56(1): 207-221, http://ir.iphy.ac.cn/handle/311004/56804.
[80] Zhao Jing, Zhang GuangYu, Shi DongXia. Review of graphene-based strain sensors. CHINESE PHYSICS B[J]. 2013, 22(5): http://ir.iphy.ac.cn/handle/311004/57407.
[81] He, Congli, Li, Jiafang, Wu, Xing, Chen, Peng, Zhao, Jing, Yin, Kuibo, Cheng, Meng, Yang, Wei, Xie, Guibai, Wang, Duoming, Liu, Donghua, Yang, Rong, Shi, Dongxia, Li, Zhiyuan, Sun, Litao, Zhang, Guangyu. Tunable Electroluminescence in Planar Graphene/SiO2 Memristors. ADVANCED MATERIALS[J]. 2013, 25(39): 5593-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000332331300007.
[82] Yang, Rong, Zhu, Chenxin, Meng, Jianling, Huo, Zongliang, Cheng, Meng, Liu, Donghua, Yang, Wei, Shi, Dongxia, Liu, Ming, Zhang, Guangyu. Isolated nanographene crystals for nano-floating gate in charge trapping memory. SCIENTIFIC REPORTS[J]. 2013, 3: http://www.irgrid.ac.cn/handle/1471x/1092012.

   

[1] 天津 第一届石墨烯研讨会，南开大学，2008

[2] 中国物理学会秋季学术会议，山东大学，2008

[3]中德纳米会，北京-昆明，2008

[4] G. Y. Zhang, P. F. Qi, X. R. Wang, Y. R. Lu, X. L. Li, R. Tu, S. Bangsarantip, D. Mann, L. Zhang & H. Dai, Selective etching of metallic carbon nanotubes by gas-phase reaction, 4^th Annual Foundations of Nanoscience Conference (07), Salt Lake City, April 18-21, 2007 (Keynote talk).

[5] G. Y. Zhang, P. F. Qi, X. R. Wang, Y. R. Lu, X. L. Li, R. Tu, S. Bangsarantip, D. Mann, L. Zhang & H. Dai, High current all-semiconductor carbon nanotube electronics, APS March Meeting, Denver, March 5-9, 2007

[6] G. Y. Zhang & X. Jiang, PECVD fabrication of carbon cones and helices on a metal tip,

 8th Applied Diamond Conference/NanoCarbon 2005 Joint Conference, Argonne National Laboratory, Chicago, May 15-19, 2005 (invited talk).

[7] G. Y. Zhang, X. Jiang & E. G. Wang, A new nanostructure: Tubular Graphite Cones,

1^st Academic Forum for Chinese Doctoral Candidates, Beijing, China, Oct. 17-19, 2003.

[8] G. Y. Zhang, X. Jiang & E. G. Wang, A new nanostructure: Tubular Graphite Cones, Chinese Physics Society (CPS) 2003 Fall Meeting, Hefei, China, Sep. 18-21, 2003.

[9] G. Y. Zhang & E. G. Wang, A new method to filling the carbon nanotubes with copper, German-Chinese Symposium on Self-Organization of Functional Nanomaterials, Münster, Germany, May 27-29, 2002.

[10] G. Y. Zhang, D. Y. Zhong, S. Liu

& E. G. Wang

, Polymerized carbon nitride nanobells and heterojunctions, The International Conference on Surface and Interface Science and Technology (SISE'2001), Shenzhen, China, July 31-Aug. 2, 2001.

   

中科院微电子所
中科院化学所
美国斯坦福大学化学系

杨蓉，硕博联读生
史志文，硕博联读生
张连昌，硕博联读生
程颖丽，联合培养硕士生